Extreme electronic bandgap modification in laser-crystallized silicon optical fibres

High-quality semiconductor fibres via mechanical design

Recent breakthroughs in fibre technology have enabled the assembly of functional materials with intimate interfaces into a single fibre with specific geometries1-11, delivering diverse functionalities over a large area, for example, serving as sensors, actuators, energy harvesting and storage, display, and healthcare apparatus12-17. As semiconductors are the critical component that governs device performance, the selection, control and engineering of semiconductors inside fibres are the key pathways to enabling high-performance functional fibres. However, owing to stress development and capillary instability in the high-yield fibre thermal drawing, both cracks and deformations in the semiconductor cores considerably affect the performance of these fibres. Here we report a mechanical design to achieve ultralong, fracture-free and perturbation-free semiconductor fibres, guided by a study on stress development and capillary instability at three stages of the fibre formation: the viscous flow, the core crystallization and the subsequent cooling stage. Then, the exposed semiconductor wires can be integrated into a single flexible fibre with well-defined interfaces with metal electrodes, thereby achieving optoelectronic fibres and large-scale optoelectronic fabrics. This work provides fundamental insights into extreme mechanics and fluid dynamics with geometries that are inaccessible in traditional platforms, essentially addressing the increasing demand for flexible and wearable optoelectronics.

Achieving Superior Tensile Performance in Individual Metal-Organic Framework Crystals

Rapid advances in the engineering application prospects of metal-organic framework (MOF) materials necessitate an urgent in-depth understanding of their mechanical properties. This work demonstrates unprecedented recoverable elastic deformation of Ni-tetraphenylporphyrins (Ni-TCPP) MOF nanobelts with a tensile strain as high as 14%, and a projected yield strength-to-Young's modulus ratio exceeding the theoretical limit (≈10%) for crystalline materials. Based on first-principles simulations, the observed behavior of MOF crystal can be attributed to the mechanical deformation induced conformation transition and the formation of helical configuration of dislocations under high stresses, arising from their organic ligand building blocks in the crystal structures. The investigations of the mechanical properties along with electromechanical properties demonstrate that MOF materials have exciting application potential for biomechanics integrated systems, flexible electronics, and nanoelectromechanical devices.

Low-temperature polycrystalline silicon waveguides for low loss transmission in the near-to-mid-infrared region

Low-temperature deposited polycrystalline silicon waveguides are emerging as a flexible platform that allows for dense optoelectronic integration. Here, the optical transmission properties of poly-silicon waveguides have been characterized from the near-to-mid-infrared wavelength regime, extending the optical transmission well beyond previous reports in the telecom band. The poly-Si waveguides with a dimension of 3 µm × ∼0.6 µm have been produced from pre-patterned amorphous silicon waveguides that are post-processed through laser melting, reflowing, and crystallization using a highly localized laser induced heat treatment at a wavelength of 532 nm. Low optical transmission losses (<3 dB cm^-1) have been observed at 1.55 µm as well as across the wavelength range of 2-2.25 µm, aided by the relatively large waveguide heights that are enabled by the deposition process. The results demonstrate the suitability of low-temperature poly-silicon waveguides to find wide ranging applications within integrated mid-infrared systems.

Recent Advances in Optical Fiber Enabled Radiation Sensors

Optical fibers are being widely utilized as radiation sensors and dosimeters. Benefiting from the rapidly growing optical fiber manufacturing and material engineering, advanced optical fibers have evolved significantly by using functional structures and materials, promoting their detection accuracy and usage scenarios as radiation sensors. This paper summarizes the current development of optical fiber-based radiation sensors. The sensing principles of both extrinsic and intrinsic optical fiber radiation sensors, including radiation-induced attenuation (RIA), radiation-induced luminescence (RIL), and fiber grating wavelength shifting (RI-GWS), were analyzed. The relevant advanced fiber materials and structures, including silica glass, doped silica glasses, polymers, fluorescent and scintillator materials, were also categorized and summarized based on their characteristics. The fabrication methods of intrinsic all-fiber radiation sensors were introduced, as well. Moreover, the applicable scenarios from medical dosimetry to industrial environmental monitoring were discussed. In the end, both challenges and perspectives of fiber-based radiation sensors and fiber-shaped radiation dosimeters were presented.

Recent progress of semiconductor optoelectronic fibers

Semiconductor optoelectronic fiber technology has seen rapid development in recent years thanks to advancements in fabrication and post-processing techniques. Integrating the optical and electronic functionality of semiconductor materials into a fiber geometry has opened up many possibilities, such as in-fiber frequency generation, signal modulation, photodetection, and solar energy harvesting. This review provides an overview of the state-of-the-art in semiconductor optoelectronic fibers, including fabrication and post-processing methods, materials and their optical properties. The applications in nonlinear optics, optical-electrical conversion, lasers and multimaterial functional fibers will also be highlighted.

Semiconductor core fibres: materials science in a bottle

Novel core fibers have a wide range of applications in optics, as sources, detectors and nonlinear response media. Optoelectronic, and even electronic device applications are now possible, due to the introduction of methods for drawing fibres with a semiconductor core. This review examines progress in the development of glass-clad, crystalline core fibres, with an emphasis on semiconducting cores. The underlying materials science and the importance of post-processing techniques for recrystallization and purification are examined, with achievements and future prospects tied to the phase diagrams of the core materials.

The application space for optical fibers is growing, enabled by fibers built using special materials and processes. In this Review, the authors discuss the materials science behind producing crystalline core fibers for diverse applications and progress in the field.

Single-Crystal SnSe Thermoelectric Fibers via Laser-Induced Directional Crystallization: From 1D Fibers to Multidimensional Fabrics

Single-crystal tin selenide (SnSe), a record holder of high-performance thermoelectric materials, enables high-efficient interconversion between heat and electricity for power generation or refrigeration. However, the rigid bulky SnSe cannot satisfy the applications for flexible and wearable devices. Here, a method is demonstrated to achieve ultralong single-crystal SnSe wire with rock-salt structure and high thermoelectric performance with diameters from micro- to nanoscale. This method starts from thermally drawing SnSe into a flexible fiber-like substrate, which is polycrystalline, highly flexible, ultralong, and mechanically stable. Then a CO₂ laser is employed to recrystallize the SnSe core to single-crystal over the entire fiber. Both theoretical and experimental studies demonstrate that the single-crystal rock-salt SnSe fibers possess high thermoelectric properties, significantly enhancing the ZT value to 2 at 862 K. This simple and low-cost approach offers a promising path to engage the fiber-shaped single-crystal materials in applications from 1D fiber devices to multidimensional wearable fabrics.

In-Fiber Production of Laser-Structured Stress-Mediated Semiconductor Particles

The ability to generate stressed semiconductor particles is of great importance in the development of tunable semiconductor and photonic devices. However, existing methods including both bottom-up synthesis and top-down fabrication for producing semiconductor particles are inherently free of stress effects. Here, we report a simple approach to generate controllable stress effects on both encapsulated and free-standing semiconductor particles using laser-structured in-fiber materials engineering. The physical mechanism of thermally induced in-fiber built-in stress is investigated, and the feasibility of precisely tuning the stress state during the particle formation is experimentally demonstrated by controlling the laser treatment. Gigapascal-level built-in stress, which is a sufficiently strong stimulus to enable inelastic deformations on the fabricated semiconductor particles, has been achieved via this approach. Both encapsulated and free-standing stressed semiconductor particles are generated for a wide range of in-fiber and out-fiber optoelectronic and biomedical applications.

Laser restructuring and photoluminescence of glass-clad GaSb/Si-core optical fibres

Semiconductor-core optical fibres have potential applications in photonics and optoelectronics due to large nonlinear optical coefficients and an extended transparency window. Laser processing can impose large temperature gradients, an ability that has been used to improve the uniformity of unary fibre cores, and to inscribe compositional variations in alloy systems. Interest in an integrated light-emitting element suggests a move from Group IV to III-V materials, or a core that contains both. This paper describes the fabrication of GaSb/Si core fibres, and a subsequent CO₂ laser treatment that aggregates large regions of GaSb without suppressing room temperature photoluminescence. The ability to isolate a large III-V crystalline region within the Si core is an important step towards embedding semiconductor light sources within infrared light-transmitting silicon optical fibre.

Semiconductor-core optical fibres are of interest for their non-linear optical and electro-optical properties. Here, GaSb/Si composite-core optical fibres were fabricated and a CO₂ laser was used to facilitate controlled GaSb segregation within the silicon. This has implications for embedding light sources in IR-transmitting fibers

Laser crystallized low-loss polycrystalline silicon waveguides

We report the fabrication of low-loss, low temperature deposited polysilicon waveguides via laser crystallization. The process involves pre-patterning amorphous silicon films to confine the thermal energy during the crystallization phase, which helps to control the grain growth and reduce the heat transfer to the surrounding media, making it compatible with CMOS integration. Micro-Raman spectroscopy, Secco etching and X-ray diffraction measurements reveal the high crystalline quality of the processed waveguides with the formation of millimeter long crystal grains. Optical losses as low as 5.3 dB/cm have been measured, indicating their suitability for the development of high-density integrated circuits.

Deep elastic strain engineering of bandgap through machine learning

Deforming a material to a large extent without inelastic relaxation can result in unprecedented properties. However, the optimal deformation state is buried within the vast continua of choices available in the strain space. Here we advance a unique and powerful strategy to circumvent conventional trial-and-error methods, and adopt artificial intelligence techniques for rationally designing the most energy-efficient pathway to achieve a desirable material property such as the electronic bandgap. The broad framework for tailoring any target figure of merit, for any material using machine learning, opens up opportunities to adapt elastic strain engineering of properties and performance in devices and systems in a controllable and efficient manner, for potential applications in microelectronics, optoelectronics, photonics, and energy technologies.

Nanoscale specimens of semiconductor materials as diverse as silicon and diamond are now known to be deformable to large elastic strains without inelastic relaxation. These discoveries harbinger a new age of deep elastic strain engineering of the band structure and device performance of electronic materials. Many possibilities remain to be investigated as to what pure silicon can do as the most versatile electronic material and what an ultrawide bandgap material such as diamond, with many appealing functional figures of merit, can offer after overcoming its present commercial immaturity. Deep elastic strain engineering explores full six-dimensional space of admissible nonlinear elastic strain and its effects on physical properties. Here we present a general method that combines machine learning and ab initio calculations to guide strain engineering whereby material properties and performance could be designed. This method invokes recent advances in the field of artificial intelligence by utilizing a limited amount of ab initio data for the training of a surrogate model, predicting electronic bandgap within an accuracy of 8 meV. Our model is capable of discovering the indirect-to-direct bandgap transition and semiconductor-to-metal transition in silicon by scanning the entire strain space. It is also able to identify the most energy-efficient strain pathways that would transform diamond from an ultrawide-bandgap material to a smaller-bandgap semiconductor. A broad framework is presented to tailor any target figure of merit by recourse to deep elastic strain engineering and machine learning for a variety of applications in microelectronics, optoelectronics, photonics, and energy technologies.

Advanced Multimaterial Electronic and Optoelectronic Fibers and Textiles

The ability to integrate complex electronic and optoelectronic functionalities within soft and thin fibers is one of today's key advanced manufacturing challenges. Multifunctional and connected fiber devices will be at the heart of the development of smart textiles and wearable devices. These devices also offer novel opportunities for surgical probes and tools, robotics and prostheses, communication systems, and portable energy harvesters. Among the various fiber-processing methods, the preform-to-fiber thermal drawing technique is a very promising process that is used to fabricate multimaterial fibers with complex architectures at micro- and nanoscale feature sizes. Recently, a series of scientific and technological breakthroughs have significantly advanced the field of multimaterial fibers, allowing a wider range of functionalities, better performance, and novel applications. Here, these breakthroughs, in the fundamental understanding of the fluid dynamics, rheology, and tailoring of materials microstructures at play in the thermal drawing process, are presented and critically discussed. The impact of these advances on the research landscape in this field and how they offer significant new opportunities for this rapidly growing scientific and technological platform are also discussed.

Semiconducting Nanowire-Based Optoelectronic Fibers

The recent ability to integrate semiconductor-based optoelectronic functionalities within thin fibers is opening intriguing opportunities for flexible electronics and advanced textiles. The scalable integration of high-quality semiconducting devices within functional fibers however remains a challenge. It is difficult with current strategies to combine high light absorption, good microstructure and efficient electrical contact. The growth of semiconducting nanowires is a great tool to control crystal orientation and ensure a combination of light absorption and charge extraction for efficient photodetection. Thus far, however, leveraging the attributes of nanowires has remained seemingly incompatible with fiber materials, geometry, and processing approaches. Here, the integration of semiconducting nanowire-based devices at the tip and along the length of polymer fibers is demonstrated for the first time. The scalable thermal drawing process is combined with a simple sonochemical treatment to grow nanowires out of electrically addressed amorphous selenium domains. First principles density-functional theory calculations show that this approach enables to tailor the surface energy of crystal facets and favors nanowire growth along a preferred orientation, resulting in fiber-integrated devices of unprecedented performance. This novel platform is exploited to demonstrate an all-fiber-integrated fluorescence imaging system, highlighting novel opportunities in sensing, advanced optical probes, and smart textiles.

Confined in-fiber solidification and structural control of silicon and silicon-germanium microparticles

Crystallization of microdroplets of molten alloys could, in principle, present a number of possible morphological outcomes, depending on the symmetry of the propagating solidification front and its velocity, such as axial or spherically symmetric species segregation. However, because of thermal or constitutional supercooling, resulting droplets often only display dendritic morphologies. Here we report on the crystallization of alloyed droplets of controlled micrometer dimensions comprising silicon and germanium, leading to a number of surprising outcomes. We first produce an array of silicon-germanium particles embedded in silica, through capillary breakup of an alloy-core silica-cladding fiber. Heating and subsequent controlled cooling of individual particles with a two-wavelength laser setup allows us to realize two different morphologies, the first being a silicon-germanium compositionally segregated Janus particle oriented with respect to the illumination axis and the second being a sphere made of dendrites of germanium in silicon. Gigapascal-level compressive stresses are measured within pure silicon solidified in silica as a direct consequence of volume-constrained solidification of a material undergoing anomalous expansion. The ability to generate microspheres with controlled morphology and unusual stresses could pave the way toward advanced integrated in-fiber electronic or optoelectronic devices.

Optoelectronic Fibers via Selective Amplification of In-Fiber Capillary Instabilities

Thermally drawn metal-insulator-semiconductor fibers provide a scalable path to functional fibers. Here, a ladder-like metal-semiconductor-metal photodetecting device is formed inside a single silica fiber in a controllable and scalable manner, achieving a high density of optoelectronic components over the entire fiber length and operating at a bandwidth of 470 kHz, orders of magnitude larger than any other drawn fiber device.

Laser recrystallization and inscription of compositional microstructures in crystalline SiGe-core fibres

Glass fibres with silicon cores have emerged as a versatile platform for all-optical processing, sensing and microscale optoelectronic devices. Using SiGe in the core extends the accessible wavelength range and potential optical functionality because the bandgap and optical properties can be tuned by changing the composition. However, silicon and germanium segregate unevenly during non-equilibrium solidification, presenting new fabrication challenges, and requiring detailed studies of the alloy crystallization dynamics in the fibre geometry. We report the fabrication of SiGe-core optical fibres, and the use of CO₂ laser irradiation to heat the glass cladding and recrystallize the core, improving optical transmission. We observe the ramifications of the classic models of solidification at the microscale, and demonstrate suppression of constitutional undercooling at high solidification velocities. Tailoring the recrystallization conditions allows formation of long single crystals with uniform composition, as well as fabrication of compositional microstructures, such as gratings, within the fibre core.

Using SiGe in the core of optical fibres extends the wavelength range and potential optical functionality, but fabrication challenges exist. Here, Coucheron et al. report the fabrication and tailoring of SiGe-core optical fibres using CO₂ laser irradiation to heat the glass cladding and recrystallize the core.

Approaching the ideal elastic strain limit in silicon nanowires

Achieving high elasticity for silicon (Si) nanowires, one of the most important and versatile building blocks in nanoelectronics, would enable their application in flexible electronics and bio-nano interfaces. We show that vapor-liquid-solid-grown single-crystalline Si nanowires with diameters of ~100 nm can be repeatedly stretched above 10% elastic strain at room temperature, approaching the theoretical elastic limit of silicon (17 to 20%). A few samples even reached ~16% tensile strain, with estimated fracture stress up to ~20 GPa. The deformations were fully reversible and hysteresis-free under loading-unloading tests with varied strain rates, and the failures still occurred in brittle fracture, with no visible sign of plasticity. The ability to achieve this "deep ultra-strength" for Si nanowires can be attributed mainly to their pristine, defect-scarce, nanosized single-crystalline structure and atomically smooth surfaces. This result indicates that semiconductor nanowires could have ultra-large elasticity with tunable band structures for promising "elastic strain engineering" applications.

Tapered polysilicon core fibers for nonlinear photonics

We propose and demonstrate a novel approach to obtaining small-core polysilicon waveguides from the silicon fiber platform. The fibers were fabricated via a conventional drawing tower method and, subsequently, tapered down to achieve silicon core diameters of ∼1  μm, the smallest optical cores for this class of fiber to date. Characterization of the material properties have shown that the taper process helps to improve the local crystallinity of the silicon core, resulting in a significant reduction in the material loss. By exploiting the combination of small cores and low losses, these tapered fibers have enabled the first observation of nonlinear transmission within a polycrystalline silicon waveguide of any type. As the fiber drawing method is highly scalable, it opens a route for the development of low-cost and flexible nonlinear silicon photonic systems.

In situ stress observation in oxide films and how tensile stress influences oxygen ion conduction

Many properties of materials can be changed by varying the interatomic distances in the crystal lattice by applying stress. Ideal model systems for investigations are heteroepitaxial thin films where lattice distortions can be induced by the crystallographic mismatch with the substrate. Here we describe an in situ simultaneous diagnostic of growth mode and stress during pulsed laser deposition of oxide thin films. The stress state and evolution up to the relaxation onset are monitored during the growth of oxygen ion conducting Ce0.85Sm0.15O2-δ thin films via optical wafer curvature measurements. Increasing tensile stress lowers the activation energy for charge transport and a thorough characterization of stress and morphology allows quantifying this effect using samples with the conductive properties of single crystals. The combined in situ application of optical deflectometry and electron diffraction provides an invaluable tool for strain engineering in Materials Science to fabricate novel devices with intriguing functionalities.

Silver metaphosphate glass wires inside silica fibers--a new approach for hybrid optical fibers

Phosphate glasses represent promising candidates for next-generation photonic devices due to their unique characteristics, such as vastly tunable optical properties, and high rare earth solubility. Here we show that silver metaphosphate wires with bulk optical properties and diameters as small as 2 µm can be integrated into silica fibers using pressure-assisted melt filling. By analyzing two types of hybrid metaphosphate-silica fibers, we show that the filled metaphosphate glass has only negligible higher attenuation and a refractive index that is identical to the bulk material. The presented results pave the way towards new fiber-type optical devices relying on metaphosphate glasses, which are promising materials for applications in nonlinear optics, sensing and spectral filtering.

Electronic band-gap modified passive silicon optical modulator at telecommunications wavelengths

The silicon optical modulator is considered to be the workhorse of a revolution in communications. In recent years, the capabilities of externally driven active silicon optical modulators have dramatically improved. Self-driven passive modulators, especially passive silicon modulators, possess advantages in compactness, integration, low-cost, etc. Constrained by a large indirect band-gap and sensitivity-related loss, the passive silicon optical modulator is scarce and has been not advancing, especially at telecommunications wavelengths. Here, a passive silicon optical modulator is fabricated by introducing an impurity band in the electronic band-gap, and its nonlinear optics and applications in the telecommunications-wavelength lasers are investigated. The saturable absorption properties at the wavelength of 1.55 μm was measured and indicates that the sample is quite sensitive to light intensity and has negligible absorption loss. With a passive silicon modulator, pulsed lasers were constructed at wavelengths at 1.34 and 1.42 μm. It is concluded that the sensitive self-driven passive silicon optical modulator is a viable candidate for photonics applications out to 2.5 μm.