In situ epitaxial MgB2 thin films for superconducting electronics

Wafer-Scale MgB2 Superconducting Devices

Progress in superconducting device and detector technologies over the past decade has realized practical applications in quantum computers, detectors for far-infrared telescopes, and optical communications. Superconducting thin-film materials, however, have remained largely unchanged, with aluminum still being the material of choice for superconducting qubits and niobium compounds for high-frequency/high kinetic inductance devices. Magnesium diboride (MgB2), known for its highest transition temperature (Tc = 39 K) among metallic superconductors, is a viable material for elevated temperature and higher frequency superconducting devices moving toward THz frequencies. However, difficulty in synthesizing wafer-scale thin films has prevented implementation of MgB2 devices into the application base of superconducting electronics. Here, we report ultrasmooth (<0.5 nm root-mean-square roughness) and uniform MgB2 thin (<100 nm) films over 100 mm in diameter and present prototype devices fabricated with these films demonstrating key superconducting properties including an internal quality factor over 104 at 4.5 K and high tunable kinetic inductance in the order of tens of pH/sq in a 40 nm thick film. This advancement will enable development of elevated temperature, high-frequency superconducting quantum circuits, and devices.

MgB2 Thin Films Fabricated by Pulsed Laser Deposition Using Nd:YAG Laser in an In Situ Two-Step Process

Magnesium diboride (MgB2) thin films on r-cut sapphire (r-Al2O3) single crystals were fabricated by a precursor, which was obtained at room temperature via a pulsed laser deposition (PLD) method using a Nd:YAG laser, and an in situ postannealing process. The onset superconducting transition, Tconset, and zero-resistivity transition, Tczero, were observed at 33.6 and 31.7 K, respectively, in the MgB2 thin films prepared by a Mg-rich target with a ratio of Mg:B = 3:2. The critical current density, Jc, calculated from magnetization measurements reached up to 0.9 × 106 A cm−2 at 20 K and 0 T. The broad angular Jc peak was found at 28 K when the magnetic fields were applied in a direction parallel to the film surface (θ = 90°). This could be indicative of the granular structure with randomly oriented grains. Our results demonstrate that this process is a promising candidate for the fabrication of MgB2 superconducting devices.

Revisiting optical properties of MgB2 with a high-quality sample prepared by a HPCVD method

We investigated a high-quality MgB2 thin film with a thickness of ~1000 nm on an Al2O3 substrate using optical spectroscopy. We measured the reflectance spectra of the film at various temperatures both below, and above, the superconducting transition temperature, T c   [Formula: see text] 40 K. An earlier study showed that when the sample surface is exposed to air the optical properties of the surface change immediately, however, the saturated change is negligibly small in the far-infrared region. The optical conductivity spectrum in the normal state shows two (narrow and broad) Drude modes, with the narrow Drude mode being dominant in the low frequency region below 1000 cm-1. Our study, which uses a good-quality sample, provides more reliable data on the optical properties of MgB2, in a similar spectral range. The optical data is analyzed further using an extended Drude model, and the electron-phonon spectral density function, α 2 F(ω), is extracted. The spectral density function α 2 F(ω) features two peaks: a small one near 114 cm-1, and a strong peak around the 550 cm-1 where the B-B bond stretching phonon exists. Our data in the superconducting state does not show the expected energy shift of the onset of scattering associated with the α 2 F(ω) peaks.

Magnesium diboride coated bulk niobium: a new approach to higher acceleration gradient

Bulk niobium Superconducting Radio-Frequency cavities are a leading accelerator technology. Their performance is limited by the cavity loss and maximum acceleration gradient, which are negatively affected by vortex penetration into the superconductor when the peak magnetic field at the cavity wall surface exceeds the vortex penetration field (H_vp). It has been proposed that coating the inner wall of an SRF cavity with superconducting thin films increases H_vp. In this work, we utilized Nb ellipsoid to simulate an inverse SRF cavity and investigate the effect of coating it with magnesium diboride layer on the vortex penetration field. A significant enhancement of H_vp was observed. At 2.8 K, H_vp increased from 2100 Oe for an uncoated Nb ellipsoid to 2700 Oe for a Nb ellipsoid coated with ~200 nm thick MgB₂ thin film. This finding creates a new route towards achieving higher acceleration gradient in SRF cavity accelerator beyond the theoretical limit of bulk Nb.

Microstructures and superconducting properties of high performance MgB2 thin films deposited from a high-purity, dense Mg-B target

High quality, c-axis oriented, MgB₂ thin films were successfully grown on 6H-SiC substrates using pulsed laser deposition (PLD) with subsequent in situ annealing. To obtain high purity films free from oxygen contamination, a dense Mg-B target was specially made from a high temperature, high pressure reaction of Mg and B to form large-grained (10~50 µm) MgB₂. Microstructural analysis via electron microscopy found that the resulting grains of the film were composed of ultrafine columnar grains of 19-30 nm. XRD analysis showed the MgB₂ films to be c-axis oriented; the a-axis and c-axis lattice parameters were determined to be 3.073 ± 0.005 Å and 3.528 ± 0.010 Å, respectively. The superconducting critical temperature, T_c,onset , increased monotonically as the annealing temperature was increased, varying from 25.2 K to 33.7 K. The superconducting critical current density as determined from magnetic measurements, J_cm , at 5 K, was 10⁵ A/cm² at 7.8 T; at 20 K, 10⁵ A/cm² was reached at 3.1 T. The transport and pinning properties of these films were compared to "powder-in-tube" (PIT) and "internal-infiltration" (AIMI) processed wires. Additionally, examination of the pinning mechanism showed that when scaled to the peak in the pinning curve, the films follow the grain boundary, or surface, pinning mechanism quite well, and are similar to the response seen for C doped PIT and AIMI strands, in contrast to the behavior seen in undoped PIT wires, in which deviations are seen at high b (b = B/B_c2 ). On the other hand, the magnitude of the pinning force was similar for the thin films and AIMI conductors, unlike the values from connectivity-suppressed PIT strands.

Direct Pen Writing of High-Tc, Flexible Magnesium Diboride Superconducting Arrays

High-Tc , flexible MgB2 -nanowire-based superconducting arrays are fabricated via a direct pen writing method on both copper foils and poly(dimethylsiloxane) (PDMS) substrates. Such superconducting arrays constitute a new approach for fabricating superconducting devices. The realization of a PDMS-based device demonstrates the potential for expanding this material into other high-Tc superconductor systems, which may lead to novel ways of driving the development of "real-life" applications.

Unravelling orientation distribution and merging behavior of monolayer MoS2 domains on sapphire

Monolayer MoS2 prepared by chemical vapor deposition (CVD) has a highly polycrystalline nature largely because of the coalescence of misoriented domains, which severely hinders its future applications. Identifying and even controlling the orientations of individual domains and understanding their merging behavior therefore hold fundamental significance. In this work, by using single-crystalline sapphire (0001) substrates, we designed the CVD growth of monolayer MoS2 triangles and their polycrystalline aggregates for such purposes. The obtained triangular MoS2 domains on sapphire were found to distributively align in two directions, which, as supported by density functional theory calculations, should be attributed to the relatively small fluctuations of the interface binding energy around the two primary orientations. Using dark-field transmission electron microscopy, we further imaged the grain boundaries of the aggregating domains and determined their prevalent armchair crystallographic orientations with respect to the adjacent MoS2 lattice. The coalescence of individual triangular flakes governed by unique kinetic processes is proposed for the polycrystal formation. These findings are expected to shed light on the controlled MoS2 growth toward predefined domain orientation and large domain size, thus enabling its versatile applications in next-generation nanoelectronics and optoelectronics.

Design and implementation of a novel portable atomic layer deposition/chemical vapor deposition hybrid reactor

We report the development of a novel portable atomic layer deposition chemical vapor deposition (ALD/CVD) hybrid reactor setup. Unique feature of this reactor is the use of ALD/CVD mode in a single portable deposition system to fabricate multi-layer thin films over a broad range from "bulk-like" multi-micrometer to nanometer atomic dimensions. The precursor delivery system and control-architecture are designed so that continuous reactant flows for CVD and cyclic pulsating flows for ALD mode are facilitated. A custom-written LabVIEW program controls the valve sequencing to allow synthesis of different kinds of film structures under either ALD or CVD mode or both. The entire reactor setup weighs less than 40 lb and has a relatively small footprint of 8 × 9 in., making it compact and easy for transportation. The reactor is tested in the ALD mode with titanium oxide (TiO2) ALD using tetrakis(diethylamino)titanium and water vapor. The resulting growth rate of 0.04 nm/cycle and purity of the films are in good agreement with literature values. The ALD/CVD hybrid mode is demonstrated with ALD of TiO2 and CVD of tin oxide (SnOx). Transmission electron microscopy images of the resulting films confirm the formation of successive distinct TiO2-ALD and SnO(x)-CVD layers.

A new general synthetic strategy for phase-pure complex functional materials

The ability of ionic liquids to solvate inorganic salts completely has to date never been employed in the synthesis of complex inorganic materials. Here, we demonstrate that complex functional oxides, even those traditionally considered extremely difficult to synthesize in bulk, such as quinternary superconductors, are produced with no impurity phases and on timescales that are much shorter than other synthetic techniques.

Template engineering of Co-doped BaFe2As2 single-crystal thin films

Understanding new superconductors requires high-quality epitaxial thin films to explore intrinsic electromagnetic properties and evaluate device applications. So far, superconducting properties of ferropnictide thin films seem compromised by imperfect epitaxial growth and poor connectivity of the superconducting phase. Here we report new template engineering using single-crystal intermediate layers of (001) SrTiO(3) and BaTiO(3) grown on various perovskite substrates that enables genuine epitaxial films of Co-doped BaFe(2)As(2) with a high transition temperature (T(c,rho=0) of 21.5 K, where rho=resistivity), a small transition width (DeltaT(c)=1.3 K), a superior critical current density J(c) of 4.5 MA cm(-2) (4.2 K) and strong c-axis flux pinning. Implementing SrTiO(3) or BaTiO(3) templates to match the alkaline-earth layer in the Ba-122 with the alkaline-earth/oxygen layer in the templates opens new avenues for epitaxial growth of ferropnictides on multifunctional single-crystal substrates. Beyond superconductors, it provides a framework for growing heteroepitaxial intermetallic compounds on various substrates by matching interfacial layers between templates and thin-film overlayers.

Fully band-resolved scattering rate in MgB2 revealed by the nonlinear hall effect and magnetoresistance measurements

We have measured the normal state temperature dependence of the Hall effect and magnetoresistance in epitaxial MgB2 thin films with variable disorders characterized by the residual resistance ratio RRR ranging from 4.0 to 33.3. A strong nonlinearity of the Hall effect and magnetoresistance have been found in clean samples, and they decrease gradually with the increase of disorders or temperature. By fitting the data to the theoretical model based on the Boltzmann equation and ab initio calculations for a four-band system, for the first time, we derived the scattering rates of these four bands at different temperatures and magnitude of disorders. Our method provides a unique way to derive these important parameters in multiband systems.

Facile High-Yield Synthesis of Pure, Crystalline Mg(BH4)2

Magnesium borohydride, Mg(BH4)2, a long-sought candidate for efficient hydrogen storage chemisorption technology, has been obtained in a pure and crystalline form by two new synthetic routes in a hydrocarbon solvent. A first synthetic approach involves a metathetical reaction between organometallic magnesium compounds; a second route consists of an insertion reaction of BH3 species, released from BH3.S(CH3)2, into the Mg-C bonds of MgR2, with complete replacement of R groups with BH4 groups. Both methods, based on commercially available reagents, afford identical, pure, polycrystalline materials, identified by X-ray diffraction as the so-called low-temperature hexagonal form of Mg(BH4)2, stable below 180 degrees C, recently shown to possess a complex, unpredictable, crystal structure.

Large anisotropic normal-state magnetoresistance in clean MgB2 thin films

We report a large normal-state magnetoresistance with temperature-dependent anisotropy in very clean epitaxial MgB2 thin films (residual resistivity much smaller than 1 microOmega cm) grown by hybrid physical-chemical vapor deposition. The magnetoresistance shows a complex dependence on the orientation of the applied magnetic field, with a large magnetoresistance (Delta(rho)/(rho)0=136%) observed for the field H perpendicular ab plane. The angular dependence changes dramatically as the temperature is increased, and at high temperatures the magnetoresistance maximum changes to H||ab. We attribute the large magnetoresistance and the evolution of its angular dependence with temperature to the multiple bands with different Fermi surface topology in MgB2 and the relative scattering rates of the sigma and pi bands, which vary with temperature due to stronger electron-phonon coupling for the sigma bands.

Enhancement of the superconducting transition temperature of MgB2 by a strain-induced bond-stretching mode softening

We report a systematic increase of the superconducting transition temperature T(c) with a biaxial tensile strain in MgB2 films to well beyond the bulk value. The tensile strain increases with the MgB2 film thickness, caused primarily by the coalescence of initially nucleated discrete islands (the Volmer-Weber growth mode.) The T(c) increase was observed in epitaxial films on SiC and sapphire substrates, although the T(c) values were different for the two substrates due to different lattice parameters and thermal expansion coefficients. We identified, by first-principles calculations, the underlying mechanism for the T(c) increase to be the softening of the bond-stretching E(2g) phonon mode, and we confirmed this conclusion by Raman scattering measurements. The result suggests that the E(2g) phonon softening is a possible avenue to achieve even higher T(c) in MgB2-related material systems.