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Shu W, Tang Y, Su B, Hong A, Lin L, Zhou X, Yan Z, Liu JM. Enhanced Thermoelectric Performance of p-type AgSbTe 2 via Cu Doping. ACS APPLIED MATERIALS & INTERFACES 2024; 16:54105-54114. [PMID: 39330927 DOI: 10.1021/acsami.4c05454] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/28/2024]
Abstract
Recently, the p-type semiconductor AgSbTe2 has received a great deal of attention due to its promising thermoelectric performance in intermediate temperatures (300-700 K). However, its performance is limited by the suboptimal carrier concentration and the presence of Ag2Te impurities. Herein, we synthesized AgSb1-xCuxTe2 (x = 0, 0.02, 0.04, and 0.06) and investigated the effect of Cu doping on the thermoelectric properties of AgSbTe2. Our results indicate that Cu doping suppresses the Ag2Te impurities, raises the carrier concentration, and results in an improved power factor (PF). The calculation reveals that Cu doping downshifts the Fermi energy level, reduces the energy band gap and the difference among several valence band maximums, and thereby explains the improvement of PF. In addition, Cu doping reduces the thermal conductivity, possibly attributed to the inhibition of Ag2Te impurities and the phonon softening of the AgSb1-xCuxTe2. Overall, Cu doping improves the ZT of AgSb1-xCuxTe2. Among all samples, AgSb0.96Cu0.04Te2 has a maximum ZT of ∼1.45 at 498 K and an average ZT of ∼1.11 from 298 to 573 K.
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Affiliation(s)
- Wenjie Shu
- National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China
| | - Yuxia Tang
- National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China
| | - Bingwen Su
- National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China
| | - Aijun Hong
- School of Physics, Communication and Electronics, Jiangxi Normal University, Nanchang 330022, China
| | - Lin Lin
- Department of Applied Physics, College of Science, Nanjing Forestry University, Nanjing 210037, China
| | - Xiaohui Zhou
- National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China
| | - Zhibo Yan
- National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China
| | - Jun-Ming Liu
- National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China
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2
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Li L, Hu B, Liu Q, Shi XL, Chen ZG. High-Performance AgSbTe 2 Thermoelectrics: Advances, Challenges, and Perspectives. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2409275. [PMID: 39223847 DOI: 10.1002/adma.202409275] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2024] [Revised: 08/20/2024] [Indexed: 09/04/2024]
Abstract
Environmental-friendless and high-performance thermoelectrics play a significant role in exploring sustainable clean energy. Among them, AgSbTe2 thermoelectrics, benefiting from the disorder in the cation sublattice and interface scattering from secondary phases of Ag2Te and Sb2Te3, exhibit low thermal conductivity and a maximum figure-of-merit ZT of 2.6 at 573 K via optimizing electrical properties and addressing phase transition issues. Therefore, AgSbTe2 shows considerable potential as a promising medium-temperature thermoelectric material. Additionally, with the increasing demands for device integration and portability in the information age, the research on flexible and wearable AgSbTe2 thermoelectrics aligns with contemporary development needs, leading to a growing number of research findings. This work provides a detailed and timely review of AgSbTe2-based thermoelectrics from materials to devices. Principles and performance optimization strategies are highlighted for the thermoelectric performance enhancement in AgSbTe2. The current challenges and future research directions of AgSbTe2-based thermoelectrics are pointed out. This review will guide the development of high-performance AgSbTe2-based thermoelectrics for practical applications.
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Affiliation(s)
- Lan Li
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland, 4000, Australia
| | - Boxuan Hu
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland, 4000, Australia
| | - Qingyi Liu
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland, 4000, Australia
| | - Xiao-Lei Shi
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland, 4000, Australia
| | - Zhi-Gang Chen
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland, 4000, Australia
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3
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Wu J, Lin Y, Shu M, Liu Y, Ma Y, Lin G, Zhang C, Jiao P, Zhu F, Wu Y, Ewings RA, Walker HC, Deng G, Chi S, Jiang S, Baggioli M, Jin M, Wang H, Xie W, Wei TR, Yang J, Shi X, Ma J. Uncovering the phonon spectra and lattice dynamics of plastically deformable InSe van der Waals crystals. Nat Commun 2024; 15:6248. [PMID: 39048583 PMCID: PMC11269642 DOI: 10.1038/s41467-024-50249-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/29/2023] [Accepted: 07/04/2024] [Indexed: 07/27/2024] Open
Abstract
Stacking two-dimensional (2D) van der Waals (vdW) materials in a layered bulk structure provides an appealing platform for the emergence of exotic physical properties. As a vdW crystal with exceptional plasticity, InSe offers the opportunity to explore various effects arising from the coupling of its peculiar mechanical behaviors and other physical properties. Here, we employ neutron scattering techniques to investigate the correlations of plastic interlayer slip, lattice anharmonicity, and thermal transport in InSe crystals. Not only are the interlayer slip direction and magnitude well captured by shifts in the Bragg reflections, but we also observe a deviation from the expected Debye behaviour in the heat capacity and lattice thermal conductivity. Combining the experimental data with first-principles calculations, we tentatively attribute the observed evidence of strong phonon-phonon interactions to a combination of a large acoustic-optical frequency resonance and a nesting effect. These findings correlate the macroscopic plastic slip and the microscopic lattice dynamics, providing insights into the mechano-thermo coupling and modulation in 2D vdW materials.
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Affiliation(s)
- Jiangtao Wu
- Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Yifei Lin
- Materials Genome Institute, Shanghai University, 99 Shangda Road, 200444, Shanghai, China
| | - Mingfang Shu
- Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Yifei Liu
- State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Yupeng Ma
- State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Gaoting Lin
- Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Cuiping Zhang
- Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Pengfei Jiao
- Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Fengfeng Zhu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, China
| | - Yan Wu
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Russell A Ewings
- ISIS Pulsed Neutron and Muon Source, STFC Rutherford Appleton Laboratory, Harwell Campus, Didcot, OX11 0QX, United Kingdom
| | - Helen C Walker
- ISIS Pulsed Neutron and Muon Source, STFC Rutherford Appleton Laboratory, Harwell Campus, Didcot, OX11 0QX, United Kingdom
| | - Guochu Deng
- Australian Centre for Neutron Scattering, Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW, Australia
| | - Songxue Chi
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Shengwei Jiang
- Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Matteo Baggioli
- Wilczek Quantum Center and School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Min Jin
- College of Materials, Shanghai Dianji University, Shanghai, 201306, China
| | - Haozhe Wang
- Department of Chemistry, Michigan State University, East Lansing, MI, 48824, USA
| | - Weiwei Xie
- Department of Chemistry, Michigan State University, East Lansing, MI, 48824, USA
| | - Tian-Ran Wei
- State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China.
| | - Jiong Yang
- Materials Genome Institute, Shanghai University, 99 Shangda Road, 200444, Shanghai, China.
| | - Xun Shi
- State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Jie Ma
- Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China.
- Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, Jiangsu, China.
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Chen J, Li T, Dai H, Wang C, Chen Z, Wu J, Wang S, Cheng X, Xue R. Improving Thermoelectric Performance of AgSbTe 2 through Suppression of Ag 2Te and Band Convergence via Mg and Ti Codoping. ACS APPLIED MATERIALS & INTERFACES 2024; 16:35095-35103. [PMID: 38940362 DOI: 10.1021/acsami.4c05873] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/29/2024]
Abstract
In this study, the impact of codoping Mg and Ti on the thermoelectric performance of AgSbTe2 materials was investigated. Through a two-step synthesis process involving slow cooling and spark plasma sintering, AgSb0.98-xMg0.02TixTe2 samples were prepared. The introduction of Mg and Ti dopants effectively suppressed the formation of the undesirable Ag2Te phase. Density functional theory (DFT) calculations confirmed that Ti doping facilitated the band convergence, leading to a reduction in the effective mass of the carriers. This optimization enhanced carrier mobility and, consequently, electrical conductivity. Additionally, the codoping strategy resulted in the reinforcement of point defects, which contributed to a decrease in lattice thermal conductivity. The AgSb0.98-xMg0.02TixTe2 sample achieved a maximum figure of merit (ZT) value of 1.45 at 523 K, representing an 87% improvement over the undoped AgSbTe2 sample. The average ZT value over the temperature range of 323-573 K was 1.09, marking a significant enhancement in thermoelectric performance. This research demonstrates the potential of Mg and Ti codoping as a strategy to improve the thermoelectric properties of AgSbTe2-based materials.
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Affiliation(s)
- Jing Chen
- School of Electronic Information, Zhengzhou University of Light Industry, Zhengzhou 450002, China
| | - Tao Li
- School of Electronic Information, Zhengzhou University of Light Industry, Zhengzhou 450002, China
| | - Haiyang Dai
- School of Electronic Information, Zhengzhou University of Light Industry, Zhengzhou 450002, China
| | - Chao Wang
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Zhiquan Chen
- Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072, China
| | - Jie Wu
- School of Electronic Information, Zhengzhou University of Light Industry, Zhengzhou 450002, China
| | - Shizhuo Wang
- School of Electronic Information, Zhengzhou University of Light Industry, Zhengzhou 450002, China
| | - Xuerui Cheng
- School of Electronic Information, Zhengzhou University of Light Industry, Zhengzhou 450002, China
| | - Renzhong Xue
- School of Electronic Information, Zhengzhou University of Light Industry, Zhengzhou 450002, China
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5
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Sarkar D, Bhui A, Maria I, Dutta M, Biswas K. Hidden structures: a driving factor to achieve low thermal conductivity and high thermoelectric performance. Chem Soc Rev 2024; 53:6100-6149. [PMID: 38717749 DOI: 10.1039/d4cs00038b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2024]
Abstract
The long-range periodic atomic arrangement or the lack thereof in solids typically dictates the magnitude and temperature dependence of their lattice thermal conductivity (κlat). Compared to crystalline materials, glasses exhibit a much-suppressed κlat across all temperatures as the phonon mean free path reaches parity with the interatomic distances therein. While the occurrence of such glass-like thermal transport in crystalline solids captivates the scientific community with its fundamental inquiry, it also holds the potential for profoundly impacting the field of thermoelectric energy conversion. Therefore, efficient manipulation of thermal transport and comprehension of the microscopic mechanisms dictating phonon scattering in crystalline solids are paramount. As quantized lattice vibrations (i.e., phonons) drive κlat, atomistic insights into the chemical bonding characteristics are crucial to have informed knowledge about their origins. Recently, it has been observed that within the highly symmetric 'averaged' crystal structures, often there are hidden locally asymmetric atomic motifs (within a few Å), which exert far-reaching influence on phonon transport. Phenomena such as local atomic off-centering, atomic rattling or tunneling, liquid-like atomic motion, site splitting, local ordering, etc., which arise within a few Å scales, are generally found to drastically disrupt the passage of heat carrying phonons. Despite their profound implication(s) for phonon dynamics, they are often overlooked by traditional crystallographic techniques. In this review, we provide a brief overview of the fundamental aspects of heat transport and explore the status quo of innately low thermally conductive crystalline solids, wherein the phonon dynamics is majorly governed by local structural phenomena. We also discuss advanced techniques capable of characterizing the crystal structure at the sub-atomic level. Subsequently, we delve into the emergent new ideas with examples linked to local crystal structure and lattice dynamics. While discussing the implications of the local structure for thermal conductivity, we provide the state-of-the-art examples of high-performance thermoelectric materials. Finally, we offer our viewpoint on the experimental and theoretical challenges, potential new paths, and the integration of novel strategies with material synthesis to achieve low κlat and realize high thermoelectric performance in crystalline solids via local structure designing.
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Affiliation(s)
- Debattam Sarkar
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
| | - Animesh Bhui
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
| | - Ivy Maria
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
| | - Moinak Dutta
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
| | - Kanishka Biswas
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
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6
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Devan CV, Kurian MM, P N S, Varma MR, Deb B. A low-temperature thermoelectric transport study of non-stoichiometric AgSbTe 2. Phys Chem Chem Phys 2024; 26:16625-16636. [PMID: 38808366 DOI: 10.1039/d4cp01171f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/30/2024]
Abstract
In recent times, considerable attention has been given to examining the impact of micro/nanostructure on the thermoelectric characteristics of nonstoichiometric AgSbTe2. The present investigation employed direct melting of elements that produced p-type AgSbTe2 with spontaneous nanostructuring due to cation ordering. The product predominantly features an Ag-deficient Ag0.927Sb1.07Te2.005 phase with monoclinic Ag2Te nanoprecipitates and exhibits a degenerate semiconductor-like behavior with an energy band gap of 0.15 eV. A Seebeck coefficient of 251 μV K-1 and a power factor of 741 μW m-1 K-2 at near ambient temperature are attained with this composition. The variable range hopping (VRH) and linear magnetoresistance (LMR) confirmed that the low-temperature transport followed a VRH between the localized states. The composition also exhibited glass like thermal conductivity of 0.2 W m-1 K-1 arising from phonon scattering at all-scale hierarchical structures that led to a high ZT of 1.1 at room temperature. The direct melted ingots show a high relative density of ∼97%, Vickers hardness Hv of ∼108.5 kgf mm-2, and excellent thermal stability, making them an attractive choice for TEGs.
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Affiliation(s)
- Chinnu V Devan
- Centre for Sustainable Energy Technology (C-SET), CSIR-National Institute for Interdisciplinary Science and Technology (NIIST), Thiruvananthapuram- 695019, Kerala, India.
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, India
| | - Mahima M Kurian
- Department of Physics, Indian Institute of Technology Madras (IITM), Chennai 600036, India
| | - Santhosh P N
- Department of Physics, Indian Institute of Technology Madras (IITM), Chennai 600036, India
| | - Manoj Raama Varma
- Materials Science and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology (NIIST), Thiruvananthapuram-695019, Kerala, India. mailto:
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, India
| | - Biswapriya Deb
- Centre for Sustainable Energy Technology (C-SET), CSIR-National Institute for Interdisciplinary Science and Technology (NIIST), Thiruvananthapuram- 695019, Kerala, India.
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad-201002, India
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7
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Jang H, Toriyama MY, Abbey S, Frimpong B, Snyder GJ, Jung YS, Oh M. Suppressed Lone Pair Electrons Explain Unconventional Rise of Lattice Thermal Conductivity in Defective Crystalline Solids. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2308075. [PMID: 38626376 PMCID: PMC11200014 DOI: 10.1002/advs.202308075] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/25/2023] [Revised: 12/09/2023] [Indexed: 04/18/2024]
Abstract
Manipulating thermal properties of materials can be interpreted as the control of how vibrations of atoms (known as phonons) scatter in a crystal lattice. Compared to a perfect crystal, crystalline solids with defects are expected to have shorter phonon mean free paths caused by point defect scattering, leading to lower lattice thermal conductivities than those without defects. While this is true in many cases, alloying can increase the phonon mean free path in the Cd-doped AgSnSbSe3 system to increase the lattice thermal conductivity from 0.65 to 1.05 W m-1 K-1 by replacing 18% of the Sb sites with Cd. It is found that the presence of lone pair electrons leads to the off-centering of cations from the centrosymmetric position of a cubic lattice. X-ray pair distribution function analysis reveals that this structural distortion is relieved when the electronic configuration of the dopant element cannot produce lone pair electrons. Furthermore, a decrease in the Grüneisen parameter with doping is experimentally confirmed, establishing a relationship between the stereochemical activity of lone pair electrons and the lattice anharmonicity. The observed "harmonic" behavior with doping suggests that lone pair electrons must be preserved to effectively suppress phonon transport in these systems.
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Affiliation(s)
- Hanhwi Jang
- Department of Materials Science and EngineeringKorea Advanced Institute of Science and Technology (KAIST)Daejeon34141Republic of Korea
| | - Michael Y. Toriyama
- Department of Materials Science and EngineeringNorthwestern UniversityEvanstonIL60208USA
| | - Stanley Abbey
- Department of Materials Science and EngineeringHanbat National UniversityYuseong‐guDaejeon34158Republic of Korea
| | - Brakowaa Frimpong
- Department of Materials Science and EngineeringHanbat National UniversityYuseong‐guDaejeon34158Republic of Korea
| | - G. Jeffrey Snyder
- Department of Materials Science and EngineeringNorthwestern UniversityEvanstonIL60208USA
| | - Yeon Sik Jung
- Department of Materials Science and EngineeringKorea Advanced Institute of Science and Technology (KAIST)Daejeon34141Republic of Korea
| | - Min‐Wook Oh
- Department of Materials Science and EngineeringHanbat National UniversityYuseong‐guDaejeon34158Republic of Korea
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8
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Liu Y, Xie H, Li Z, Dos Reis R, Li J, Hu X, Meza P, AlMalki M, Snyder GJ, Grayson MA, Wolverton C, Kanatzidis MG, Dravid VP. Implications and Optimization of Domain Structures in IV-VI High-Entropy Thermoelectric Materials. J Am Chem Soc 2024; 146:12620-12635. [PMID: 38669614 DOI: 10.1021/jacs.4c01688] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/28/2024]
Abstract
High-entropy semiconductors are now an important class of materials widely investigated for thermoelectric applications. Understanding the impact of chemical and structural heterogeneity on transport properties in these compositionally complex systems is essential for thermoelectric design. In this work, we uncover the polar domain structures in the high-entropy PbGeSnSe1.5Te1.5 system and assess their impact on thermoelectric properties. We found that polar domains induced by crystal symmetry breaking give rise to well-structured alternating strain fields. These fields effectively disrupt phonon propagation and suppress the thermal conductivity. We demonstrate that the polar domain structures can be modulated by tuning crystal symmetry through entropy engineering in PbGeSnAgxSbxSe1.5+xTe1.5+x. Incremental increases in the entropy enhance the crystal symmetry of the system, which suppresses domain formation and loses its efficacy in suppressing phonon propagation. As a result, the room-temperature lattice thermal conductivity increases from κL = 0.63 Wm-1 K-1 (x = 0) to 0.79 Wm-1 K-1 (x = 0.10). In the meantime, the increase in crystal symmetry, however, leads to enhanced valley degeneracy and improves the weighted mobility from μw = 29.6 cm2 V-1 s-1 (x = 0) to 35.8 cm2 V-1 s-1 (x = 0.10). As such, optimal thermoelectric performance can be achieved through entropy engineering by balancing weighted mobility and lattice thermal conductivity. This work, for the first time, studies the impact of polar domain structures on thermoelectric properties, and the developed understanding of the intricate interplay between crystal symmetry, polar domains, and transport properties, along with the impact of entropy control, provides valuable insights into designing GeTe-based high-entropy thermoelectrics.
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Affiliation(s)
- Yukun Liu
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- International Institute of Nanotechnology (IIN), Northwestern University, Evanston, Illinois 60208, United States
| | - Hongyao Xie
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Zhi Li
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Roberto Dos Reis
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- International Institute of Nanotechnology (IIN), Northwestern University, Evanston, Illinois 60208, United States
| | - Juncen Li
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Xiaobing Hu
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Paty Meza
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Muath AlMalki
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 1261, Saudi Arabia
| | - G Jeffrey Snyder
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Matthew A Grayson
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Christopher Wolverton
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- International Institute of Nanotechnology (IIN), Northwestern University, Evanston, Illinois 60208, United States
| | - Mercouri G Kanatzidis
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- International Institute of Nanotechnology (IIN), Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Vinayak P Dravid
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- International Institute of Nanotechnology (IIN), Northwestern University, Evanston, Illinois 60208, United States
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9
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Taneja V, Das S, Dolui K, Ghosh T, Bhui A, Bhat U, Kedia DK, Pal K, Datta R, Biswas K. High Thermoelectric Performance in Phonon-Glass Electron-Crystal Like AgSbTe 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307058. [PMID: 38010977 DOI: 10.1002/adma.202307058] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Revised: 11/16/2023] [Indexed: 11/29/2023]
Abstract
Achieving glass-like ultra-low thermal conductivity in crystalline solids with high electrical conductivity, a crucial requirement for high-performance thermoelectrics , continues to be a formidable challenge. A careful balance between electrical and thermal transport is essential for optimizing the thermoelectric performance. Despite this inherent trade-off, the experimental realization of an ideal thermoelectric material with a phonon-glass electron-crystal (PGEC) nature has rarely been achieved. Here, PGEC-like AgSbTe2 is demonstrated by tuning the atomic disorder upon Yb doping, which results in an outstanding thermoelectric performance with figure of merit, zT ≈ 2.4 at 573 K. Yb-doping-induced enhanced atomic ordering decreases the overlap between the hole and phonon mean free paths and consequently leads to a PGEC-like transport behavior in AgSbTe2 . A twofold increase in electrical mobility is observed while keeping the position of the Fermi level (EF ) nearly unchanged and corroborates the enhanced crystalline nature of the AgSbTe2 lattice upon Yb doping for electrical transport. The cation-ordered domains, lead to the formation of nanoscale superstructures (≈2 to 4 nm) that strongly scatter heat-carrying phonons, resulting in a temperature-independent glass-like thermal conductivity. The strategy paves the way for realizing high thermoelectric performance in various disordered crystals by making them amorphous to phonons while favoring crystal-like electrical transport.
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Affiliation(s)
- Vaishali Taneja
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, 560064, India
| | - Subarna Das
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, 560064, India
| | - Kapildeb Dolui
- Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK
| | - Tanmoy Ghosh
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, 560064, India
| | - Animesh Bhui
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, 560064, India
| | - Usha Bhat
- Chemistry and Physics of Materials Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, 560064, India
| | - Dinesh Kumar Kedia
- Department of Physics, Indian Institute of Science Education and Research, Pune, Dr. Homi Bhabha Road, Pune, 411008, India
| | - Koushik Pal
- Department of Physics, Indian Institute of Technology Kanpur, Kanpur, 208016, India
| | - Ranjan Datta
- Chemistry and Physics of Materials Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, 560064, India
| | - Kanishka Biswas
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, 560064, India
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10
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Bhui A, Das S, Arora R, Bhat U, Dutta P, Ghosh T, Pathak R, Datta R, Waghmare UV, Biswas K. Hg Doping Induced Reduction in Structural Disorder Enhances the Thermoelectric Performance in AgSbTe 2. J Am Chem Soc 2023; 145:25392-25400. [PMID: 37942795 DOI: 10.1021/jacs.3c09643] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2023]
Abstract
Defect engineering, achieved by precise tuning of the atomic disorder within crystalline solids, forms a cornerstone of structural chemistry. This nuanced approach holds the potential to significantly augment thermoelectric performance by synergistically manipulating the interplay between the charge carrier and lattice dynamics. Here, the current study presents a distinctive investigation wherein the introduction of Hg doping into AgSbTe2 serves to partially curtail structural disorder. This strategic maneuver mitigates potential fluctuations originating from pronounced charge and size disparities between Ag+ and Sb3+, positioned in octahedral sites within the rock salt structure. Hg doping significantly improves the phase stability of AgSbTe2 by restricting the congenital emergence of the Ag2Te minor secondary phase and promotes partial atomic ordering in the cation sublattice. Reduction in atomic disorder coalesced with a complementary modification of electronic structure by Hg doping results in increased carrier mobility. The formation of nanoscale superstructure with sizes (2-5 nm) of the order of phonon mean free path in AgSbTe2 is further promoted by reduced partial disorder, causes enhanced scattering of heat-carrying phonons, and results in a glass-like ultralow lattice thermal conductivity (∼0.32 W m-1 K-1 at 297 K). Cumulatively, the multifaceted influence of Hg doping, in conjunction with the consequential reduction in disorder, allows achieving a high thermoelectric figure-of-merit, zT, of ∼2.4 at ∼570 K. This result defies conventional paradigms that prioritize increased disorder for optimizing zT.
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Affiliation(s)
- Animesh Bhui
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Subarna Das
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Raagya Arora
- Theoretical Sciences Unit and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Usha Bhat
- Chemistry and Physics of Materials Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Prabir Dutta
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Tanmoy Ghosh
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Riddhimoy Pathak
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Ranjan Datta
- Chemistry and Physics of Materials Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Umesh V Waghmare
- Theoretical Sciences Unit and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Kanishka Biswas
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
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11
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Zhu Y, Yu Y, Zhang H, Qin Y, Wang ZY, Zhan S, Liu D, Lin N, Tao Y, Hong T, Wang S, Ge ZH, Wuttig M, Zhao LD. Large Mobility Enables Higher Thermoelectric Cooling and Power Generation Performance in n-type AgPb 18+xSbTe 20 Crystals. J Am Chem Soc 2023. [PMID: 37922502 DOI: 10.1021/jacs.3c09655] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2023]
Abstract
The room-temperature thermoelectric performance of materials underpins their thermoelectric cooling ability. Carrier mobility plays a significant role in the electronic transport property of materials, especially near room temperature, which can be optimized by proper composition control and growing crystals. Here, we grow Pb-compensated AgPb18+xSbTe20 crystals using a vertical Bridgman method. A large weighted mobility of ∼410 cm2 V-1 s-1 is achieved in the AgPb18.4SbTe20 crystal, which is almost 4 times higher than that of the polycrystalline counterpart due to the elimination of grain boundaries and Ag-rich dislocations verified by atom probe tomography, highlighting the significant benefit of growing crystals for low-temperature thermoelectrics. Due to the largely promoted weighted mobility, we achieve a high power factor of ∼37.8 μW cm-1 K-2 and a large figure of merit ZT of ∼0.6 in AgPb18.4SbTe20 crystal at 303 K. We further designed a 7-pair thermoelectric module using this n-type crystal and a commercial p-type (Bi, Sb)2Te3-based material. As a result, a high cooling temperature difference (ΔT) of ∼42.7 K and a power generation efficiency of ∼3.7% are achieved, revealing promising thermoelectric applications for PbTe-based materials near room temperature.
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Affiliation(s)
- Yingcai Zhu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Yuan Yu
- Institute of Physics (IA), RWTH Aachen University, Sommerfeldstraße 14, 52074 Aachen, Germany
| | - Huaide Zhang
- Institute of Physics (IA), RWTH Aachen University, Sommerfeldstraße 14, 52074 Aachen, Germany
| | - Yongxin Qin
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Zi-Yuan Wang
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China
| | - Shaoping Zhan
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Dongrui Liu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Nan Lin
- Institute of Physics (IA), RWTH Aachen University, Sommerfeldstraße 14, 52074 Aachen, Germany
| | - Yinghao Tao
- Institute of Physics (IA), RWTH Aachen University, Sommerfeldstraße 14, 52074 Aachen, Germany
| | - Tao Hong
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Siqi Wang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Zhen-Hua Ge
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China
| | - Matthias Wuttig
- Institute of Physics (IA), RWTH Aachen University, Sommerfeldstraße 14, 52074 Aachen, Germany
| | - Li-Dong Zhao
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
- Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province (2021E10022), Hangzhou Innovation Institute of Beihang University, Hangzhou 310051, China
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12
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Jang H, Jung YS, Oh MW. Advances in thermoelectric AgBiSe 2: Properties, strategies, and future challenges. Heliyon 2023; 9:e21117. [PMID: 37928035 PMCID: PMC10623285 DOI: 10.1016/j.heliyon.2023.e21117] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Revised: 10/04/2023] [Accepted: 10/16/2023] [Indexed: 11/07/2023] Open
Abstract
Thermoelectric materials are attracting considerable attention to alleviate the global energy crisis by enabling the direct conversion of heat into electricity. As a class of I-V-VI2 semiconductors, AgBiSe2 is expected to be the potential thermoelectric material to replace conventional PbTe-based compounds due to its non-toxic and abundant nature of its constituent elements. This review article summarizes the fundamental properties of AgBiSe2, thermoelectric properties, the effect of different dopants on its transport properties and entropy engineering for cubic phase stabilization with the detailed description of related techniques used to analyze the properties of AgBiSe2. The current thermoelectric figure-of-merit and approaches to further improve performance and operational stability are also discussed.
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Affiliation(s)
- Hanhwi Jang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Yeon Sik Jung
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Min-Wook Oh
- Department of Materials Science and Engineering, Hanbat National University, Yuseong-gu, Daejeon, 34158, Republic of Korea
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13
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Yuan J, Chen Y, Liao B. Lattice Dynamics and Thermal Transport in Semiconductors with Anti-Bonding Valence Bands. J Am Chem Soc 2023; 145:18506-18515. [PMID: 37566730 DOI: 10.1021/jacs.3c05091] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2023]
Abstract
Achieving high thermoelectric performance requires efficient manipulation of thermal conductivity and a fundamental understanding of the microscopic mechanisms of phonon transport in crystalline solids. One of the major challenges in thermal transport is achieving ultralow lattice thermal conductivity. In this study, we use the anti-bonding character of the highest-occupied valence band as an efficient descriptor for discovering new materials with an ultralow thermal conductivity. We first examined the relationship between anti-bonding valence bands (ABVBs) and low lattice thermal conductivity in model systems PbTe and CsPbBr3. Then, we conducted a high-throughput search in the Materials Project database and identified over 600 experimentally stable binary semiconductors with an anti-bonding character in their valence bands. From our candidate list, we conducted a comprehensive analysis of the chemical bonds and the thermal transport in the XS family, where X = K, Rb, and Cs are alkaline metals. These materials all exhibit ultralow thermal conductivities less than 1 W/(m K) at room temperature despite simple structures. We attributed the ultralow thermal conductivity to the weakened bonds and increased phonon anharmonicity due to their ABVBs. Our results provide chemical intuitions to understand lattice dynamics in crystals and open up a convenient venue toward searching for materials with an intrinsically low lattice thermal conductivity.
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Affiliation(s)
- Jiaoyue Yuan
- Department of Mechanical Engineering, University of California, Santa Barbara, California 93106, USA
- Department of Physics, University of California, Santa Barbara, California 93106, USA
| | - Yubi Chen
- Department of Mechanical Engineering, University of California, Santa Barbara, California 93106, USA
- Department of Physics, University of California, Santa Barbara, California 93106, USA
| | - Bolin Liao
- Department of Mechanical Engineering, University of California, Santa Barbara, California 93106, USA
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14
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Feng J, Zhou M, Li J, Dong G, Gao S, Min E, Zhang C, He J, Sun R, Liu R. A boost of thermoelectric generation performance for polycrystalline InTe by texture modulation. MATERIALS HORIZONS 2023; 10:3082-3089. [PMID: 37218449 DOI: 10.1039/d3mh00292f] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
The new rising binary InTe displays advantageously high electronic conductivity and low thermal conductivity along the [110] direction, providing a high potential of texture modulation for thermoelectric performance improvement. In this work, coarse crystalline InTe material with a high degree of texture along the [110] direction was realized by the oriented crystal hot-deformation method. The coarse grains with high texture not only maintain the preferred orientation of the zone-melting crystal as far as possible, but also greatly depress the grain boundary scattering, thus leading to the highest room temperature power factor of 8.7 μW cm-1 K-1 and a high average figure of merit of 0.71 in the range of 300-623 K. Furthermore, the polycrystalline characteristic with refined grains also promotes the mechanical properties. As a result, an 8-couple thermoelectric generator module consisting of p-type InTe and commercial n-type Bi2Te2.7Se0.3 legs was successfully integrated and a high conversion efficiency of ∼5.0% under the temperature difference of 290 K was achieved, which is comparable to traditional Bi2Te3 based modules. This work not only demonstrates the potential of InTe as a power generator near room temperature, but also provides one more typical example of a texture modulation strategy beyond the traditional Bi2Te3 thermoelectrics.
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Affiliation(s)
- Jianghe Feng
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China.
- Shenzhen Key Laboratory of Thermoelectric Materials, Department of Physics, Southern University of Science and Technology, 518055 Shenzhen, People's Republic of China.
| | - Menghui Zhou
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China.
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China.
| | - Juan Li
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China.
| | - Guoying Dong
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China.
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China.
| | - Shufang Gao
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China.
- Shenzhen Key Laboratory of Thermoelectric Materials, Department of Physics, Southern University of Science and Technology, 518055 Shenzhen, People's Republic of China.
| | - Erbiao Min
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China.
| | - Chuang Zhang
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China.
| | - Jiaqing He
- Shenzhen Key Laboratory of Thermoelectric Materials, Department of Physics, Southern University of Science and Technology, 518055 Shenzhen, People's Republic of China.
| | - Rong Sun
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China.
| | - Ruiheng Liu
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China.
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15
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Du R, Zhang G, Hao M, Xuan X, Peng P, Fan P, Si H, Yang G, Wang C. Enhanced Thermoelectric Performance of Mg-Doped AgSbTe 2 by Inhibiting the Formation of Ag 2Te. ACS APPLIED MATERIALS & INTERFACES 2023; 15:9508-9516. [PMID: 36749154 DOI: 10.1021/acsami.2c22930] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The existence of Ag2Te has always been an obstacle for p-type thermoelectric material AgSbTe2 to improve its thermoelectric performance. In this work, AgSb1-xMgxTe2 samples are synthesized by melting-slow-cooling and then spark plasma sintering (SPS). Through increasing the solubility of Ag2Te in the AgSbTe2 matrix by Mg doping, the formation of Ag2Te is inhibited. Density functional theory calculations confirm more valence bands are involved in electrical transport due to Mg doping. Therefore, the electrical conductivity of AgSb1-xMgxTe2 samples has been greatly improved due to the reduction of Ag2Te with n-type electrical conductivity. Moreover, the downward trend of ZT, which is caused by the structural transition of Ag2Te at about 418 K, disappears. Meanwhile, lattice defects form in the AgSb0.98Mg0.02Te2 sample, and Mg doping improves the configurational entropy change, resulting in a decrease in lattice thermal conductivity over the entire temperature range of measurement. Finally, a high ZT value of 1.31 at 523 K is achieved for the AgSb0.98Mg0.02Te2 sample. This study demonstrates that Mg doping can effectively improve AgSbTe2 thermoelectric performance by inhibiting the formation of the Ag2Te impurity phase.
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Affiliation(s)
- Rui Du
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, China
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, Henan University, Kaifeng 475004, China
| | - Guangbiao Zhang
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, China
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, Henan University, Kaifeng 475004, China
| | - Min Hao
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, China
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, Henan University, Kaifeng 475004, China
| | - Xiaowei Xuan
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, China
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, Henan University, Kaifeng 475004, China
| | - Panpan Peng
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, China
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, Henan University, Kaifeng 475004, China
| | - Pengya Fan
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, China
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, Henan University, Kaifeng 475004, China
| | - Haotian Si
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, China
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, Henan University, Kaifeng 475004, China
| | - Gui Yang
- School of Mechanical and Electrical Engineering, Chuzhou University, Chuzhou 239000, China
| | - Chao Wang
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, China
- International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, Henan University, Kaifeng 475004, China
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16
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Song H, Zhang X, Yuan P, Hu W, Gao Z. First-principles study on bilayer SnP 3 as a promising thermoelectric material. Phys Chem Chem Phys 2022; 24:29693-29699. [PMID: 36453524 DOI: 10.1039/d2cp04167g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/19/2022]
Abstract
The bilayer SnP3 is recently predicted to exfoliate from its bulk phase, and motivated by the transition of the metal-to-semiconductor when the bulk SnP3 is converted to the bilayer, we study the thermoelectric performance of the bilayer SnP3 using first-principles combined with Boltzmann transport theory and deformation potential theory. The results indicate that the bilayer SnP3 is an indirect band gap semiconductor and possesses high carrier mobility. The high carrier mobility results in a large Seebeck coefficient observed in both n- and p-doped bilayer SnP3, which is helpful for acquiring a high figure of merit (ZT). Moreover, by analyzing the phonon spectrum, relaxation time, and joint density of states, we found that strong phonon scattering makes the phonon thermal conductivity extremely low (∼0.8 W m-1 K-1 at room temperature). Together with a high power factor and a low phonon thermal conductivity, the maximum ZT value can reach up to 3.8 for p-type doping at a reasonable carrier concentration, which is not only superior to that of the monolayer SnP3, but also that of the excellent thermoelectric material SnSe. Our results shed light on the fact that bilayer SnP3 is a promising thermoelectric material with a better performance than its monolayer phase.
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Affiliation(s)
- Hongyue Song
- College of Science, Zhengzhou Key Laboratory of Low-dimensional Quantum Materials and Devices, Zhongyuan University of Technology, Zhengzhou 450007, China
| | - Xuehua Zhang
- College of Science, Zhengzhou Key Laboratory of Low-dimensional Quantum Materials and Devices, Zhongyuan University of Technology, Zhengzhou 450007, China
| | - Peiling Yuan
- College of Science, Zhengzhou Key Laboratory of Low-dimensional Quantum Materials and Devices, Zhongyuan University of Technology, Zhengzhou 450007, China
| | - Wencheng Hu
- College of Science, Zhengzhou Key Laboratory of Low-dimensional Quantum Materials and Devices, Zhongyuan University of Technology, Zhengzhou 450007, China
| | - Zhibin Gao
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China.
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17
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Chan C, Huo Q, Kumar A, Shi Y, Hong H, Du Y, Ren S, Wong K, Yip C. Heterogeneity and Memory Effect in the Sluggish Dynamics of Vacancy Defects in Colloidal Disordered Crystals and Their Implications to High-Entropy Alloys. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2205522. [PMID: 36310387 PMCID: PMC9799019 DOI: 10.1002/advs.202205522] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/22/2022] [Indexed: 06/16/2023]
Abstract
Vacancy dynamics of high-density 2D colloidal crystals with a polydispersity in particle size are studied experimentally. Heterogeneity in vacancy dynamics is observed. Inert vacancies that hardly hop to other lattice sites and active vacancies that hop frequently between different lattice sites are found within the same samples. The vacancies show high probabilities of first hopping from one lattice site to another neighboring lattice site, then staying at the new site for some time, and later hopping back to the original site in the next hop. This back-returning hop probability increases monotonically with the increase in packing fraction, up to 83%. This memory effect makes the active vacancies diffuse sluggishly or even get trapped in local regions. Strain-induced vacancy motion on a distorted lattice is also observed. New glassy properties in the disordered crystals are discovered, including the dynamical heterogeneity, the presence of cooperative rearranging regions, memory effect, etc. Similarities between the colloidal disordered crystals and the high-entropy alloys (HEAs) are also discussed. Molecular dynamics simulations further support the experimental observations. These results help to understand the microscopic origin of the sluggish dynamics in materials with ordered structures but in random energy landscapes, such as high-entropy alloys.
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Affiliation(s)
- Chor‐Hoi Chan
- Faculty of ScienceHarbin Institute of Technology ShenzhenShenzhen518055China
| | - Qingxiao Huo
- Faculty of ScienceHarbin Institute of Technology ShenzhenShenzhen518055China
| | - Anupam Kumar
- Faculty of ScienceHarbin Institute of Technology ShenzhenShenzhen518055China
| | - Yunhong Shi
- Faculty of ScienceHarbin Institute of Technology ShenzhenShenzhen518055China
| | - Huihui Hong
- Faculty of ScienceHarbin Institute of Technology ShenzhenShenzhen518055China
| | - Yitong Du
- Faculty of ScienceHarbin Institute of Technology ShenzhenShenzhen518055China
| | - Simiao Ren
- Department of Applied PhysicsHong Kong Polytechnic UniversityHung HomHong KongChina
- Present address:
Department of Electrical and Computer EngineeringDuke UniversityDurhamNC27705USA
| | - Kin‐Ping Wong
- Department of Applied PhysicsHong Kong Polytechnic UniversityHung HomHong KongChina
| | - Cho‐Tung Yip
- Faculty of ScienceHarbin Institute of Technology ShenzhenShenzhen518055China
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18
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Gainza J, Serrano-Sánchez F, Dura OJ, Nemes NM, Martínez JL, Fernández-Díaz MT, Alonso JA. Reduced Thermal Conductivity in Nanostructured AgSbTe 2 Thermoelectric Material, Obtained by Arc-Melting. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3910. [PMID: 36364685 PMCID: PMC9653711 DOI: 10.3390/nano12213910] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/10/2022] [Revised: 11/02/2022] [Accepted: 11/04/2022] [Indexed: 06/16/2023]
Abstract
AgSbTe2 intermetallic compound is a promising thermoelectric material. It has also been described as necessary to obtain LAST and TAGS alloys, some of the best performing thermoelectrics of the last decades. Due to the random location of Ag and Sb atoms in the crystal structure, the electronic structure is highly influenced by the atomic ordering of these atoms and makes the accurate determination of the Ag/Sb occupancy of paramount importance. We report on the synthesis of polycrystalline AgSbTe2 by arc-melting, yielding nanostructured dense pellets. SEM images show a conspicuous layered nanostructuration, with a layer thickness of 25-30 nm. Neutron powder diffraction data show that AgSbTe2 crystalizes in the cubic Pm-3m space group, with a slight deficiency of Te, probably due to volatilization during the arc-melting process. The transport properties show some anomalies at ~600 K, which can be related to the onset temperature for atomic ordering. The average thermoelectric figure of merit remains around ~0.6 from ~550 up to ~680 K.
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Affiliation(s)
- Javier Gainza
- Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), Sor Juana Inés de la Cruz 3, 28049 Madrid, Spain
| | - Federico Serrano-Sánchez
- Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), Sor Juana Inés de la Cruz 3, 28049 Madrid, Spain
| | - Oscar J. Dura
- Departamento de Física Aplicada, Universidad de Castilla-La Mancha, 13071 Ciudad Real, Spain
| | - Norbert M. Nemes
- Departamento de Física de Materiales, Universidad Complutense de Madrid, 28040 Madrid, Spain
| | - Jose Luis Martínez
- Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), Sor Juana Inés de la Cruz 3, 28049 Madrid, Spain
| | | | - José Antonio Alonso
- Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), Sor Juana Inés de la Cruz 3, 28049 Madrid, Spain
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19
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Jang H, Toriyama MY, Abbey S, Frimpong B, Male JP, Snyder GJ, Jung YS, Oh MW. Suppressing Charged Cation Antisites via Se Vapor Annealing Enables p-Type Dopability in AgBiSe 2 -SnSe Thermoelectrics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2204132. [PMID: 35944565 DOI: 10.1002/adma.202204132] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/07/2022] [Revised: 07/02/2022] [Indexed: 06/15/2023]
Abstract
Cation disordering is commonly found in multinary cubic compounds, but its effect on electronic properties has been neglected because of difficulties in determining the ordered structure and defect energetics. An absence of rational understanding of the point defects present has led to poor reproducibility and uncontrolled conduction type. AgBiSe2 is a representative compound that suffers from poor reproducibility of thermoelectric properties, while the origins of its intrinsic n-type conductivity remain speculative. Here, it is demonstrated that cation disordering is facilitated by BiAg charged antisite defects in cubic AgBiSe2 which also act as a principal donor defect that greatly controls the electronic properties. Using density functional theory calculations and in situ Raman spectroscopy, how saturation annealing with selenium vapor can stabilize p-type conductivity in cubic AgBiSe2 alloyed with SnSe at high temperatures is elucidated. With stable and controlled hole concentration, a peak is observed in the weighted mobility and the density-of-states effective mass in AgBiSnSe3 , implying an increased valley degeneracy in this system. These findings corroborate the importance of considering the defect energetics for exploring the dopability of ternary thermoelectric chalcogenides and engineering electronic bands by controlling self-doping.
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Affiliation(s)
- Hanhwi Jang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Michael Y Toriyama
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Stanley Abbey
- Department of Materials Science and Engineering, Hanbat National University, Yuseong-gu, Daejeon, 34158, Republic of Korea
| | - Brakowaa Frimpong
- Department of Materials Science and Engineering, Hanbat National University, Yuseong-gu, Daejeon, 34158, Republic of Korea
| | - James P Male
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - G Jeffrey Snyder
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Yeon Sik Jung
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Min-Wook Oh
- Department of Materials Science and Engineering, Hanbat National University, Yuseong-gu, Daejeon, 34158, Republic of Korea
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20
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Glassy thermal conductivity in Cs 3Bi 2I 6Cl 3 single crystal. Nat Commun 2022; 13:5053. [PMID: 36030224 PMCID: PMC9420152 DOI: 10.1038/s41467-022-32773-4] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/23/2022] [Accepted: 08/15/2022] [Indexed: 11/30/2022] Open
Abstract
As the periodic atomic arrangement of a crystal is made to a disorder or glassy-amorphous system by destroying the long-range order, lattice thermal conductivity, κL, decreases, and its fundamental characteristics changes. The realization of ultralow and unusual glass-like κL in a crystalline material is challenging but crucial to many applications like thermoelectrics and thermal barrier coatings. Herein, we demonstrate an ultralow (~0.20 W/m·K at room temperature) and glass-like temperature dependence (2–400 K) of κL in a single crystal of layered halide perovskite, Cs3Bi2I6Cl3. Acoustic phonons with low cut-off frequency (20 cm−1) are responsible for the low sound velocity in Cs3Bi2I6Cl3 and make the structure elastically soft. While a strong anharmonicity originates from the low energy and localized rattling-like vibration of Cs atoms, synchrotron X-ray pair-distribution function evidence a local structural distortion in the Bi-halide octahedra and Cl vacancy. The hierarchical chemical bonding and soft vibrations from selective sublattice leading to low κL is intriguing from lattice dynamical perspective as well as have potential applications. The investigation of thermal conductivity is crucial to the success of many modern technologies. Here the authors have reported an unusual glass-like thermal conductivity in a single crystal of layered halide perovskite, Cs3Bi2I6Cl3.
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21
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Ghosh T, Dutta M, Sarkar D, Biswas K. Insights into Low Thermal Conductivity in Inorganic Materials for Thermoelectrics. J Am Chem Soc 2022; 144:10099-10118. [PMID: 35652915 DOI: 10.1021/jacs.2c02017] [Citation(s) in RCA: 32] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/01/2023]
Abstract
Efficient manipulation of thermal conductivity and fundamental understanding of the microscopic mechanisms of phonon scattering in crystalline solids are crucial to achieve high thermoelectric performance. Thermoelectric energy conversion directly and reversibly converts between heat and electricity and is a promising renewable technology to generate electricity by recovering waste heat and improve solid-state refrigeration. However, a unique challenge in thermal transport needs to be addressed to achieve high thermoelectric performance: the requirement of crystalline materials with ultralow lattice thermal conductivity (κL). A plethora of strategies have been developed to lower κL in crystalline solids by means of nanostructural modifications, introduction of intrinsic or extrinsic phonon scattering centers with tailored shape and dimension, and manipulation of defects and disorder. Recently, intrinsic local lattice distortion and lattice anharmonicity originating from various mechanisms such as rattling, bonding heterogeneity, and ferroelectric instability have found popularity. In this Perspective, we outline the role of manipulation of chemical bonding and structural chemistry on thermal transport in various high-performance thermoelectric materials. We first briefly outline the fundamental aspects of κL and discuss the current status of the popular phonon scattering mechanisms in brief. Then we discuss emerging new ideas with examples of crystal structure and lattice dynamics in exemplary materials. Finally, we present an outlook for focus areas of experimental and theoretical challenges, possible new directions, and integrations of novel techniques to achieve low κL in order to realize high-performance thermoelectric materials.
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Affiliation(s)
- Tanmoy Ghosh
- New Chemistry Unit, International Centre for Materials Science, and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Moinak Dutta
- New Chemistry Unit, International Centre for Materials Science, and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Debattam Sarkar
- New Chemistry Unit, International Centre for Materials Science, and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Kanishka Biswas
- New Chemistry Unit, International Centre for Materials Science, and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
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22
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Dutta M, Prasad MVD, Pandey J, Soni A, Waghmare UV, Biswas K. Local Symmetry Breaking Suppresses Thermal Conductivity in Crystalline Solids. Angew Chem Int Ed Engl 2022; 61:e202200071. [PMID: 35137508 DOI: 10.1002/anie.202200071] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/03/2022] [Indexed: 11/07/2022]
Abstract
Understanding the correlations of both the local and global structures with lattice dynamics is critical for achieving low lattice thermal conductivity (κlat ) in crystalline materials. Herein, we demonstrate local cationic off-centring within the global rock-salt structure of AgSbSe2 by using synchrotron X-ray pair distribution function analysis and unravel the origin of its ultralow κlat ≈0.4 W mK-1 at 300 K. The cations are locally off-centered along the crystallographic ⟨ 100 ⟩ direction by about ≈0.2 Å, which averages out as the rock-salt structure on the global scale. Phonon dispersion obtained by density functional theory (DFT) shows weak instabilities that cause local off-centering distortions within an anharmonic double-well potential. The local structural distortion arises from the stereochemically active 5s2 lone pairs of Sb. Our findings open an avenue for understanding how the local structure influences the phonon transport and facilitates the design of next-generation crystalline materials with tailored thermal properties.
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Affiliation(s)
- Moinak Dutta
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, 560064, India
| | - Matukumilli V D Prasad
- Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, 560064, India
| | - Juhi Pandey
- School of Basic Sciences, Indian Institute of Technology Mandi, Mandi, Himachal Pradesh, 175005, India
| | - Ajay Soni
- School of Basic Sciences, Indian Institute of Technology Mandi, Mandi, Himachal Pradesh, 175005, India
| | - Umesh V Waghmare
- Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, 560064, India
| | - Kanishka Biswas
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, 560064, India
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23
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Local Symmetry Breaking Suppresses Thermal Conductivity in Crystalline Solids. Angew Chem Int Ed Engl 2022. [DOI: 10.1002/ange.202200071] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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24
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Jana S, Panigrahi G, Ishtiyak M, Narayanswamy S, Bhattacharjee PP, Niranjan MK, Prakash J. Germanium Antimony Bonding in Ba 4Ge 2Sb 2Te 10 with Low Thermal Conductivity. Inorg Chem 2021; 61:968-981. [PMID: 34961320 DOI: 10.1021/acs.inorgchem.1c02990] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
A new quaternary telluride, Ba4Ge2Sb2Te10, was synthesized at high temperature via the reaction of elements. A single-crystal X-ray diffraction study shows that the title compound crystallizes in its own structure type in the monoclinic P21/c space group having cell dimensions of a = 13.984(3) Å, b = 13.472(3) Å, c = 13.569(3) Å, and β = 90.16(3)° with four formula units per unit cell (Z = 4). The pseudo-one-dimensional crystal structure of Ba4Ge2Sb2Te10 consists of infinite 1∞[Ge2Sb2Te10]8- stripes, which are separated by Ba2+ cations. Each of the Ge(1) atoms is covalently bonded to four Te atoms, whereas the Ge(2) atom is covalently bonded with one Sb(2) and three Te atoms in a distorted tetrahedral geometry. The title compound is the first example of a chalcogenide that shows Ge-Sb bonding. The Sb(1) atom is present at the center of the seesaw geometry of four Te atoms. In contrast, the Sb(2) atom forms a seesaw geometry by coordinating with one Ge(2) and three Te atoms. Condensation of these Ge and Sb centered polyhedral units lead to the formation of 1∞[Ge2Sb2Te10]8- stripes. The temperature-dependent resistivity study suggests the semimetallic/degenerate semiconducting nature of polycrystalline Ba4Ge2Sb2Te10. The positive sign of Seebeck coefficient values indicates that the predominant charge carriers are holes in Ba4Ge2Sb2Te10. An extremely low lattice thermal conductivity of ∼0.34 W/mK at 773 K was observed for polycrystalline Ba4Ge2Sb2Te10, which is presumably due to the lattice anharmonicity induced by the stereochemically active 5s2 lone pair of Sb. The electronic structure of Ba4Ge2Sb2Te10 and the bonding of atom pairs in the structure have been analyzed by means of ELF analysis and crystal orbital Hamilton population (COHP) analysis.
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Affiliation(s)
- Subhendu Jana
- Department of Chemistry, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana 502284, India
| | - Gopabandhu Panigrahi
- Department of Chemistry, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana 502284, India
| | - Mohd Ishtiyak
- Department of Chemistry, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana 502284, India
| | - Sake Narayanswamy
- Department of Materials Science and Metallurgical Engineering, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana 502284, India
| | - Pinaki P Bhattacharjee
- Department of Materials Science and Metallurgical Engineering, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana 502284, India
| | - Manish K Niranjan
- Department of Physics, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana 502284, India
| | - Jai Prakash
- Department of Chemistry, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana 502284, India
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25
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Hu L, Fang YW, Qin F, Cao X, Zhao X, Luo Y, Repaka DVM, Luo W, Suwardi A, Soldi T, Aydemir U, Huang Y, Liu Z, Hippalgaonkar K, Snyder GJ, Xu J, Yan Q. High thermoelectric performance enabled by convergence of nested conduction bands in Pb 7Bi 4Se 13 with low thermal conductivity. Nat Commun 2021; 12:4793. [PMID: 34373453 PMCID: PMC8352968 DOI: 10.1038/s41467-021-25119-z] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/09/2021] [Accepted: 07/19/2021] [Indexed: 02/07/2023] Open
Abstract
Thermoelectrics enable waste heat recovery, holding promises in relieving energy and environmental crisis. Lillianite materials have been long-term ignored due to low thermoelectric efficiency. Herein we report the discovery of superior thermoelectric performance in Pb7Bi4Se13 based lillianites, with a peak figure of merit, zT of 1.35 at 800 K and a high average zT of 0.92 (450-800 K). A unique quality factor is established to predict and evaluate thermoelectric performances. It considers both band nonparabolicity and band gaps, commonly negligible in conventional quality factors. Such appealing performance is attributed to the convergence of effectively nested conduction bands, providing a high number of valley degeneracy, and a low thermal conductivity, stemming from large lattice anharmonicity, low-frequency localized Einstein modes and the coexistence of high-density moiré fringes and nanoscale defects. This work rekindles the vision that Pb7Bi4Se13 based lillianites are promising candidates for highly efficient thermoelectric energy conversion.
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Affiliation(s)
- Lei Hu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.
- Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama, Japan.
| | - Yue-Wen Fang
- Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama, Japan
| | - Feiyu Qin
- Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama, Japan
| | - Xun Cao
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Yubo Luo
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Durga Venkata Maheswar Repaka
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Singapore, Singapore
| | - Wenbo Luo
- Institute for Advanced Materials, North China Electric Power University, Beijing, China
| | - Ady Suwardi
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Singapore, Singapore
| | - Thomas Soldi
- Department of Materials and Science Engineering, Northwestern University, Evanston, IL, USA
| | - Umut Aydemir
- Department of Chemistry, Koc University, Sariyer, Istanbul, Turkey
- Koc University Boron and Advanced Materials Application and Research Center, Sariyer, Istanbul, Turkey
| | - Yizhong Huang
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Kedar Hippalgaonkar
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Singapore, Singapore
| | - G Jeffrey Snyder
- Department of Materials and Science Engineering, Northwestern University, Evanston, IL, USA
| | - Jianwei Xu
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Singapore, Singapore
| | - Qingyu Yan
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.
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26
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Kim H, Park G, Park S, Kim W. Strategies for Manipulating Phonon Transport in Solids. ACS NANO 2021; 15:2182-2196. [PMID: 33507071 DOI: 10.1021/acsnano.0c10411] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
In this review, we summarize the recent efforts on manipulating phonon transport in solids by using specific techniques that modify their phonon thermal conductivity (i.e., specific heat, phonon group velocity, and mean free path) and phonon thermal conductance (i.e., transmission probability and density of states). The strategies discussed for tuning thermal conductivity are as follows: large unit cell approach and liquid-like conduction for maneuvering specific heat; rattler, mini-bandgap, and phonon confinement for manipulating phonon group velocity; nanoparticles, nanosized grains, coated grains, alloy (isotope) scattering, selection rules in phonon dispersion, Grüneisen parameter, lone-pair electronics, dynamic disorder, and local static distortion for restricting mean free path. We have also included the discussion on tuning phonon thermal conductance, as thermal conduction can be viewed as a transmission process. Additionally, phonon filtering, ballistic transport, and waveguiding are discussed to alter density of states and transmission probability. We hope this review can bring meaningful insights to the researchers in the field of phonon transport in solids.
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Affiliation(s)
- Hoon Kim
- School of Mechanical Engineering, Yonsei University, Seoul 03722, Korea
| | - Gimin Park
- School of Mechanical Engineering, Yonsei University, Seoul 03722, Korea
| | - Sungjin Park
- School of Mechanical Engineering, Yonsei University, Seoul 03722, Korea
| | - Woochul Kim
- School of Mechanical Engineering, Yonsei University, Seoul 03722, Korea
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27
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Dutta M, Samanta M, Ghosh T, Voneshen DJ, Biswas K. Evidence of Highly Anharmonic Soft Lattice Vibrations in a Zintl Rattler. Angew Chem Int Ed Engl 2021. [DOI: 10.1002/ange.202013923] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Moinak Dutta
- New Chemistry Unit School of Advanced Materials and International Centre for Materials Science Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O. Bangalore 560064 India
| | - Manisha Samanta
- New Chemistry Unit School of Advanced Materials and International Centre for Materials Science Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O. Bangalore 560064 India
| | - Tanmoy Ghosh
- New Chemistry Unit School of Advanced Materials and International Centre for Materials Science Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O. Bangalore 560064 India
| | - David J. Voneshen
- ISIS Pulsed Neutron and Muon Source and Department of Physics Rutherford Appleton Laboratory Didcot OX11 0QX UK
- Royal Holloway University of London Egham TW20 0EX UK
| | - Kanishka Biswas
- New Chemistry Unit School of Advanced Materials and International Centre for Materials Science Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O. Bangalore 560064 India
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28
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Roychowdhury S, Ghosh T, Arora R, Samanta M, Xie L, Singh NK, Soni A, He J, Waghmare UV, Biswas K. Enhanced atomic ordering leads to high thermoelectric performance in AgSbTe
2. Science 2021; 371:722-727. [DOI: 10.1126/science.abb3517] [Citation(s) in RCA: 160] [Impact Index Per Article: 53.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/18/2020] [Revised: 11/05/2020] [Accepted: 12/15/2020] [Indexed: 12/18/2022]
Affiliation(s)
- Subhajit Roychowdhury
- New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Tanmoy Ghosh
- New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Raagya Arora
- Theoretical Sciences Unit, JNCASR, Jakkur P.O., Bangalore 560064, India
| | - Manisha Samanta
- New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Lin Xie
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Niraj Kumar Singh
- School of Basic Science, Indian Institute of Technology Mandi, Mandi, Himachal Pradesh 175075, India
| | - Ajay Soni
- School of Basic Science, Indian Institute of Technology Mandi, Mandi, Himachal Pradesh 175075, India
| | - Jiaqing He
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Umesh V. Waghmare
- Theoretical Sciences Unit, JNCASR, Jakkur P.O., Bangalore 560064, India
- School of Advanced Materials, JNCASR, Jakkur P.O., Bangalore 560064, India
- International Centre for Materials Science, JNCASR, Jakkur P.O., Bangalore 560064, India
| | - Kanishka Biswas
- New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
- School of Advanced Materials, JNCASR, Jakkur P.O., Bangalore 560064, India
- International Centre for Materials Science, JNCASR, Jakkur P.O., Bangalore 560064, India
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29
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Dutta M, Samanta M, Ghosh T, Voneshen DJ, Biswas K. Evidence of Highly Anharmonic Soft Lattice Vibrations in a Zintl Rattler. Angew Chem Int Ed Engl 2020; 60:4259-4265. [DOI: 10.1002/anie.202013923] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/16/2020] [Indexed: 11/06/2022]
Affiliation(s)
- Moinak Dutta
- New Chemistry Unit School of Advanced Materials and International Centre for Materials Science Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O. Bangalore 560064 India
| | - Manisha Samanta
- New Chemistry Unit School of Advanced Materials and International Centre for Materials Science Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O. Bangalore 560064 India
| | - Tanmoy Ghosh
- New Chemistry Unit School of Advanced Materials and International Centre for Materials Science Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O. Bangalore 560064 India
| | - David J. Voneshen
- ISIS Pulsed Neutron and Muon Source and Department of Physics Rutherford Appleton Laboratory Didcot OX11 0QX UK
- Royal Holloway University of London Egham TW20 0EX UK
| | - Kanishka Biswas
- New Chemistry Unit School of Advanced Materials and International Centre for Materials Science Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O. Bangalore 560064 India
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30
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Sun B, Niu S, Hermann RP, Moon J, Shulumba N, Page K, Zhao B, Thind AS, Mahalingam K, Milam-Guerrero J, Haiges R, Mecklenburg M, Melot BC, Jho YD, Howe BM, Mishra R, Alatas A, Winn B, Manley ME, Ravichandran J, Minnich AJ. High frequency atomic tunneling yields ultralow and glass-like thermal conductivity in chalcogenide single crystals. Nat Commun 2020; 11:6039. [PMID: 33247101 PMCID: PMC7699621 DOI: 10.1038/s41467-020-19872-w] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/28/2020] [Accepted: 10/25/2020] [Indexed: 11/08/2022] Open
Abstract
Crystalline solids exhibiting glass-like thermal conductivity have attracted substantial attention both for fundamental interest and applications such as thermoelectrics. In most crystals, the competition of phonon scattering by anharmonic interactions and crystalline imperfections leads to a non-monotonic trend of thermal conductivity with temperature. Defect-free crystals that exhibit the glassy trend of low thermal conductivity with a monotonic increase with temperature are desirable because they are intrinsically thermally insulating while retaining useful properties of perfect crystals. However, this behavior is rare, and its microscopic origin remains unclear. Here, we report the observation of ultralow and glass-like thermal conductivity in a hexagonal perovskite chalcogenide single crystal, BaTiS3, despite its highly symmetric and simple primitive cell. Elastic and inelastic scattering measurements reveal the quantum mechanical origin of this unusual trend. A two-level atomic tunneling system exists in a shallow double-well potential of the Ti atom and is of sufficiently high frequency to scatter heat-carrying phonons up to room temperature. While atomic tunneling has been invoked to explain the low-temperature thermal conductivity of solids for decades, our study establishes the presence of sub-THz frequency tunneling systems even in high-quality, electrically insulating single crystals, leading to anomalous transport properties well above cryogenic temperatures.
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Affiliation(s)
- Bo Sun
- Division of Engineering and Applied Science, California Institute of Technology, Pasadena, CA, 91125, USA
- Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Guangdong Provincial Key Laboratory of Thermal Management Engineering and Materials, Tsinghua University, 518055, Shenzhen, Guangdong, China
| | - Shanyuan Niu
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, 90089, USA
- School of Earth, Energy and Environmental Sciences, Stanford University, Stanford, CA, 94305, USA
| | - Raphael P Hermann
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Jaeyun Moon
- Division of Engineering and Applied Science, California Institute of Technology, Pasadena, CA, 91125, USA
| | - Nina Shulumba
- Division of Engineering and Applied Science, California Institute of Technology, Pasadena, CA, 91125, USA
| | - Katharine Page
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Boyang Zhao
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, 90089, USA
| | - Arashdeep S Thind
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, 63130, USA
| | - Krishnamurthy Mahalingam
- Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH, USA
| | - JoAnna Milam-Guerrero
- Department of Chemistry, University of Southern California, Los Angeles, CA, 90089, USA
| | - Ralf Haiges
- Department of Chemistry, University of Southern California, Los Angeles, CA, 90089, USA
- Loker Hydrocarbon Research Institute, University of Southern California, Los Angeles, CA, 90089, USA
| | - Matthew Mecklenburg
- Core Center of Excellence in Nano Imaging, University of Southern California, Los Angeles, CA, 90089, USA
| | - Brent C Melot
- Department of Chemistry, University of Southern California, Los Angeles, CA, 90089, USA
| | - Young-Dahl Jho
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju, 61005, South Korea
| | - Brandon M Howe
- Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH, USA
| | - Rohan Mishra
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, 63130, USA
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, 63130, USA
| | - Ahmet Alatas
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL, 60439, USA
| | - Barry Winn
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Michael E Manley
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.
| | - Jayakanth Ravichandran
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, 90089, USA.
- Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA, 90089, USA.
| | - Austin J Minnich
- Division of Engineering and Applied Science, California Institute of Technology, Pasadena, CA, 91125, USA.
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31
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Li A, Fu C, Zhao X, Zhu T. High-Performance Mg 3Sb 2-x Bi x Thermoelectrics: Progress and Perspective. RESEARCH 2020; 2020:1934848. [PMID: 33623901 PMCID: PMC7877388 DOI: 10.34133/2020/1934848] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/31/2020] [Accepted: 09/20/2020] [Indexed: 11/06/2022]
Abstract
Since the first successful implementation of n-type doping, low-cost Mg3Sb2-x Bi x alloys have been rapidly developed as excellent thermoelectric materials in recent years. An average figure of merit zT above unity over the temperature range 300-700 K makes this new system become a promising alternative to the commercially used n-type Bi2Te3-x Se x alloys for either refrigeration or low-grade heat power generation near room temperature. In this review, with the structure-property-application relationship as the mainline, we first discuss how the crystallographic, electronic, and phononic structures lay the foundation of the high thermoelectric performance. Then, optimization strategies, including the physical aspects of band engineering with Sb/Bi alloying and carrier scattering mechanism with grain boundary modification and the chemical aspects of Mg defects and aliovalent doping, are extensively reviewed. Mainstream directions targeting the improvement of zT near room temperature are outlined. Finally, device applications and related engineering issues are discussed. We hope this review could help to promote the understanding and future developments of low-cost Mg3Sb2-x Bi x alloys for practical thermoelectric applications.
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Affiliation(s)
- Airan Li
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, 310027 Hangzhou, China
| | - Chenguang Fu
- Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, 01187 Dresden, Germany
| | - Xinbing Zhao
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, 310027 Hangzhou, China
| | - Tiejun Zhu
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, 310027 Hangzhou, China
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Li J, Yang J, Shi B, Zhai W, Zhang C, Yan Y, Liu PF. Ternary multicomponent Ba/Mg/Si compounds with inherent bonding hierarchy and rattling Ba atoms toward low lattice thermal conductivity. Phys Chem Chem Phys 2020; 22:18556-18561. [PMID: 32785329 DOI: 10.1039/d0cp02792h] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/19/2023]
Abstract
Compositional tailoring externally enables the fine tuning of thermal transport parameters of materials using the dual modulation of electronic or thermal transport properties. Theoretically, we examined the lattice dynamics of three particularly ternary representatives with different stoichiometry, BaMgSi, Ba2Mg3Si4, and BaMg2Si2, and identified the inherent bonding hierarchy and rattling Ba atoms, which were responsible for reducing the lattice thermal conductivity. BaMgSi and Ba2Mg3Si4 exhibited inherently ultra-low lattice thermal conductivity of 1.27-0.37 W m-1 K-1 in the range of 300-1000 K due to the bonding hierarchy and rattling Ba atoms. The low-energy optical phonons are overlapping with the acoustic phonons. This is associated with the intrinsic rattler-like vibration of Ba cations and leads to the characteristic in the localization of the propagative phonons and large anharmonicity. Although BaMg2Si2 had a dumbbell-shaped Si-Si covalent and Ba-Si/Mg ionic bonding environment and intrinsic rattler-like vibration of Ba cations, the middle frequency optic phonon branches contribute considerably to the thermal conductivity of the lattice. At the same temperature, compared with BaMgSi and Ba2Mg3Si4, the lattice thermal conductivity of BaMg2Si2 almost doubles owing to the higher phonon lifetime and group velocities. Our findings highlight considerable potential for thermoelectric applications with a different stoichiometric ratio of Ba/Mg/Si systems due to their low lattice thermal conductivities via intrinsic modulating stoichiometry.
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Affiliation(s)
- Jingyu Li
- Institute for Computational Materials Science, School of Physics and Electronics, International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, Henan University, Kaifeng, China.
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Ren Q, Fu C, Qiu Q, Dai S, Liu Z, Masuda T, Asai S, Hagihala M, Lee S, Torri S, Kamiyama T, He L, Tong X, Felser C, Singh DJ, Zhu T, Yang J, Ma J. Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials. Nat Commun 2020; 11:3142. [PMID: 32561856 PMCID: PMC7305298 DOI: 10.1038/s41467-020-16913-2] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/01/2020] [Accepted: 06/02/2020] [Indexed: 11/25/2022] Open
Abstract
Chemical doping is one of the most important strategies for tuning electrical properties of semiconductors, particularly thermoelectric materials. Generally, the main role of chemical doping lies in optimizing the carrier concentration, but there can potentially be other important effects. Here, we show that chemical doping plays multiple roles for both electron and phonon transport properties in half-Heusler thermoelectric materials. With ZrNiSn-based half-Heusler materials as an example, we use high-quality single and polycrystalline crystals, various probes, including electrical transport measurements, inelastic neutron scattering measurement, and first-principles calculations, to investigate the underlying electron-phonon interaction. We find that chemical doping brings strong screening effects to ionized impurities, grain boundary, and polar optical phonon scattering, but has negligible influence on lattice thermal conductivity. Furthermore, it is possible to establish a carrier scattering phase diagram, which can be used to select reasonable strategies for optimization of the thermoelectric performance. Chemical doping plays an important role in tuning carrier concentration of materials, but its influence on other aspects of electrical properties is less known. Here, the authors find that chemical doping brings strong screening effects to ionized impurities, grain boundary, and polar optical phonon scattering.
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Affiliation(s)
- Qingyong Ren
- Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road, 200240, Shanghai, China
| | - Chenguang Fu
- Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Straße 40, Dresden, 01187, Germany.
| | - Qinyi Qiu
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China
| | - Shengnan Dai
- Materials Genome Institute, Shanghai University, 99 Shangda Road, 200444, Shanghai, China
| | - Zheyuan Liu
- Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road, 200240, Shanghai, China
| | - Takatsugu Masuda
- Neutron Science Laboratory, Institute for Solid State Physics, University of Tokyo, Kashiwanoha, Kashiwa, 277-8581, Japan
| | - Shinichiro Asai
- Neutron Science Laboratory, Institute for Solid State Physics, University of Tokyo, Kashiwanoha, Kashiwa, 277-8581, Japan
| | - Masato Hagihala
- Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tokai, Ibaraki, 319-1106, Japan
| | - Sanghyun Lee
- Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tokai, Ibaraki, 319-1106, Japan
| | - Shuki Torri
- Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tokai, Ibaraki, 319-1106, Japan
| | - Takashi Kamiyama
- Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tokai, Ibaraki, 319-1106, Japan.,Department of Materials Structure Science, Sokendai (The Graduate University for Advanced Studies), Tokai, Ibaraki, 319-1106, Japan
| | - Lunhua He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.,Songshan Lake Materials Laboratory, 523808, Dongguan, Guangdong, China.,Spallation Neutron Source Science Center, 523803, Dongguan, China
| | - Xin Tong
- Spallation Neutron Source Science Center, 523803, Dongguan, China.,Institute of High Energy Physics, Chinese Academy of Sciences, 100049, Beijing, China
| | - Claudia Felser
- Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Straße 40, Dresden, 01187, Germany
| | - David J Singh
- Department of Chemistry and Department of Physics and Astronomy, University of Missouri-Columbia, Columbia, MO, 65211, USA
| | - Tiejun Zhu
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, China
| | - Jiong Yang
- Materials Genome Institute, Shanghai University, 99 Shangda Road, 200444, Shanghai, China.
| | - Jie Ma
- Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University, 800 Dongchuan Road, 200240, Shanghai, China. .,Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China.
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Quayle PC. Domain formation and phase transitions in the wurtzite-based heterovalent ternaries: a Landau theory analysis. Acta Crystallogr A Found Adv 2020; 76:410-420. [PMID: 32356791 PMCID: PMC7233021 DOI: 10.1107/s2053273320003095] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/04/2019] [Accepted: 03/04/2020] [Indexed: 11/10/2022] Open
Abstract
Characterizing the crystalline disorder properties of heterovalent ternary semiconductors continues to challenge solid-state theory. Here, a Landau theory is developed for the wurtzite-based ternary semiconductor ZnSnN2. It is shown that the symmetry properties of two nearly co-stable phases, with space groups Pmc21 and Pbn21, imply that a reconstructive phase transition is the source of crystal structure disorder via a mixture of phase domains. The site exchange defect, which consists of two adjacent antisite defects, is identified as the nucleation mechanism of the transition. A Landau potential based on the space-group symmetries of the Pmc21 and Pbn21 phases is constructed from the online databases in the ISOTROPY software suite and this potential is consistent with a system that undergoes a paraelectric to antiferroelectric phase transition. It is hypothesized that the low-temperature Pbn21 phase is antiferroelectric within the c-axis basal plane. The dipole arrangements within the Pbn21 basal plane yield a nonpolar spontaneous polarization and the electrical susceptibility derived from the Landau potential exhibits a singularity at the Néel temperature characteristic of antiferroelectric behavior. These results inform the study of disorder in the broad class of heterovalent ternary semiconductors, including those based on the zincblende structure, and open the door to the application of the ternaries in new technology spaces.
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Affiliation(s)
- Paul C. Quayle
- Department of Electrical and Computer Engineering, Michigan State University, 428 South Shaw Lane, East Lansing, MI 48824-1226, USA
- Center for Coatings and Diamond Technologies, Fraunhofer USA Inc., 1449 Engineering Research Court, East Lansing, MI 48824-1226, USA
- Kyma Technologies Inc., 8829 Midway West Road, Raleigh, NC 27617, USA
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Abstract
Intrinsically low lattice thermal conductivity ([Formula: see text]) in superionic conductors is of great interest for energy conversion applications in thermoelectrics. Yet, the complex atomic dynamics leading to superionicity and ultralow thermal conductivity remain poorly understood. Here, we report a comprehensive study of the lattice dynamics and superionic diffusion in [Formula: see text] from energy- and momentum-resolved neutron and X-ray scattering techniques, combined with first-principles calculations. Our results settle unresolved questions about the lattice dynamics and thermal conduction mechanism in [Formula: see text] We find that the heat-carrying long-wavelength transverse acoustic (TA) phonons coexist with the ultrafast diffusion of Ag ions in the superionic phase, while the short-wavelength nondispersive TA phonons break down. Strong scattering of phonon quasiparticles by anharmonicity and Ag disorder are the origin of intrinsically low [Formula: see text] The breakdown of short-wavelength TA phonons is directly related to the Ag diffusion, with the vibrational spectral weight associated to Ag oscillations evolving into stochastic decaying fluctuations. Furthermore, the origin of fast ionic diffusion is shown to arise from extended flat basins in the energy landscape and collective hopping behavior facilitated by strong repulsion between Ag ions. These results provide fundamental insights into the complex atomic dynamics of superionic conductors.
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Abstract
Thermoelectric (TE) material is a class of materials that can convert heat to electrical energy directly in a solid-state-device without any moving parts and that is environmentally friendly. The study and development of TE materials have grown quickly in the past decade. However, their development goes slowly by the lack of cheap TE materials with high Seebeck coefficient and good electrical conductivity. Carbon nanotubes (CNTs) are particularly attractive as TE materials because of at least three reasons: (1) CNTs possess various band gaps depending on their structure, (2) CNTs represent unique one-dimensional carbon materials which naturally satisfies the conditions of quantum confinement effect to enhance the TE efficiency and (3) CNTs provide us with a platform for developing lightweight and flexible TE devices due to their mechanical properties. The TE power factor is reported to reach 700–1000 W / m K 2 for both p-type and n-type CNTs when purified to contain only doped semiconducting CNT species. Therefore, CNTs are promising for a variety of TE applications in which the heat source is unlimited, such as waste heat or solar heat although their figure of merit Z T is still modest (0.05 at 300 K). In this paper, we review in detail from the basic concept of TE field to the fundamental TE properties of CNTs, as well as their applications. Furthermore, the strategies are discussed to improve the TE properties of CNTs. Finally, we give our perspectives on the tremendous potential of CNTs-based TE materials and composites.
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Li K, Li Z, Yang L, Xiao C, Xie Y. Charge Compensation Modulation of the Thermoelectric Properties in AgSbTe 2 via Mn Amphoteric Doping. Inorg Chem 2019; 58:9205-9212. [PMID: 31251597 DOI: 10.1021/acs.inorgchem.9b00852] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
In thermoelectric research, the introduction of a dopant can suppress lattice thermal conductivity (κ1) through phonon scattering and optimize the power factor (PF) by changing the behavior of carriers, which are the key prerequisites for high thermoelectric performance. However, the electrical thermal conductivity (κe) can also increase with the increase of electrical conductivity (σ), which may override the optimization in PF and be detrimental to the improvement of final ZT. In this work, we highlight an amphoteric doping method by using Mn atoms to substitute both Ag and Sb atoms in AgSbTe2. The MnSb positive doping in p-type AgSbTe2 can improve the σ through increasing the hole concentration while maintaining a relative high Seebeck coefficient (S), thus substantially improving the PF. On the other hand, the MnAg negative doping can introduce electrons into the matrix, which will recombine with the major hole carriers and lead to a decrease of σ to suppress exorbitant κe induced by the MnSb doping. The combination of the both functions by Mn amphoteric doping can further improve the thermoelectric property through charge compensation modulation. By virtue of amphoteric doping, though σ is decreased, PF is further optimized because of increased S, while the total thermal conductivity (κtotal) is further decreased due to suppressed κe and additional phonon scattering, which are beneficial for the improvement of the final ZT value. As a result, 5 mol % MnAg-MnSb amphoteric doping AgSbTe2 sample achieves a maximum ZT value of ∼0.74 at 550 K, which is higher than that of the pristine sample and other Mn monodoped counterparts. The present work suggests charge compensation modulation via amphoteric doping as an effective avenue to simultaneously achieve low thermal conductivity and high power factor for better thermoelectric performance.
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Affiliation(s)
- Kun Li
- Hefei National Laboratory for Physical Sciences at the Microscale, Collaborative Innovation Center of Chemistry for Energy Materials , University of Science and Technology of China , Hefei 230026 , P.R. China
| | - Zhou Li
- Hefei National Laboratory for Physical Sciences at the Microscale, Collaborative Innovation Center of Chemistry for Energy Materials , University of Science and Technology of China , Hefei 230026 , P.R. China
| | - Lan Yang
- Hefei National Laboratory for Physical Sciences at the Microscale, Collaborative Innovation Center of Chemistry for Energy Materials , University of Science and Technology of China , Hefei 230026 , P.R. China
| | - Chong Xiao
- Hefei National Laboratory for Physical Sciences at the Microscale, Collaborative Innovation Center of Chemistry for Energy Materials , University of Science and Technology of China , Hefei 230026 , P.R. China
| | - Yi Xie
- Hefei National Laboratory for Physical Sciences at the Microscale, Collaborative Innovation Center of Chemistry for Energy Materials , University of Science and Technology of China , Hefei 230026 , P.R. China
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Ferrer-Argemi L, Yu Z, Kim J, Myung NV, Lim JH, Lee J. Silver content dependent thermal conductivity and thermoelectric properties of electrodeposited antimony telluride thin films. Sci Rep 2019; 9:9242. [PMID: 31239488 PMCID: PMC6592942 DOI: 10.1038/s41598-019-45697-9] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/08/2018] [Accepted: 06/13/2019] [Indexed: 11/16/2022] Open
Abstract
While electrodeposited antimony telluride thin films with silver contents demonstrated promising thermoelectric properties, their thermal conductivity and the silver content dependence remain unknown. Here, we report the thermal conductivities of Ag3.9Sb33.6Te62.5 and AgSbTe2 thin films with controlled annealing and temperature conditions and demonstrate the impact of silver content on thermal transport. After annealing at 160 °C, the room-temperature thermal conductivity of Ag3.9Sb33.6Te62.5 and AgSbTe2 thin films increases from 0.24 to 1.59 Wm-1 K-1 and from 0.17 to 0.56 Wm-1 K-1, respectively. Using phonon transport models and X-ray diffraction measurements, we attribute the thermal conductivity increases to the crystal growth and explain the thermal conductivity variations with the degree of crystallization. Unlike electrical properties reported in previous studies, the presence of silver contents has little impact on the thermal conductivity of Ag3.9Sb33.6Te62.5 and leads to a strong reduction in the thermal conductivity of AgSbTe2 thin films. By performing transient thermal conductivity measurements at 94 °C, we find the crystallization activation energy of Ag3.9Sb33.6Te62.5 and AgSbTe2 films as 1.14 eV and 1.16 eV, respectively. Their differences reveal the role of silver in inhibiting the nucleation and growth of Sb2Te3 crystals and impeding thermal transport. These findings provide guidance for optimizing doping and annealing conditions of antimony tellurides for near-room-temperature thermoelectric applications.
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Affiliation(s)
- Laia Ferrer-Argemi
- Department of Mechanical and Aerospace Engineering, University of California, Irvine, Irvine, CA, 92697, USA
| | - Ziqi Yu
- Department of Mechanical and Aerospace Engineering, University of California, Irvine, Irvine, CA, 92697, USA
| | - Jiwon Kim
- Electrochemistry Research Group, Materials Processing Division, Korea Institute of Materials Science, Changwon-si, Gyeongnam, 51508, Republic of Korea
| | - Nosang V Myung
- Department of Chemical and Environmental Engineering and UC-KIMS CIME, University of California-Riverside, Riverside, California, 92521, USA
| | - Jae-Hong Lim
- Department of Materials Science and Engineering, Gachon University, Seongnam, 13120, Republic of Korea.
| | - Jaeho Lee
- Department of Mechanical and Aerospace Engineering, University of California, Irvine, Irvine, CA, 92697, USA.
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Karati A, Nagini M, Ghosh S, Shabadi R, Pradeep KG, Mallik RC, Murty BS, Varadaraju UV. Ti 2NiCoSnSb - a new half-Heusler type high-entropy alloy showing simultaneous increase in Seebeck coefficient and electrical conductivity for thermoelectric applications. Sci Rep 2019; 9:5331. [PMID: 30926868 PMCID: PMC6441071 DOI: 10.1038/s41598-019-41818-6] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/04/2019] [Accepted: 03/14/2019] [Indexed: 12/04/2022] Open
Abstract
A new single phase high entropy alloy, Ti2NiCoSnSb with half-Heusler (HH) structure is synthesized for the first time by vacuum arc melting (VAM) followed by ball-milling (BM). The BM step is necessary to obtain the single phase. Local electrode atom probe (LEAP) analysis showed that the elements are homogeneously and randomly distributed in the HH phase without any clustering tendency. When the BM was carried out for 1 hour on the VAM alloy, microcrystalline alloy is obtained with traces of Sn as secondary phase. When BM was carried out for 5 h, single HH phase formation is realized in nanocrystalline form. However, when the BM samples were subjected to Spark plasma sintering (SPS), secondary phases were formed by the decomposition of primary phase. Nanostructuring leads to simultaneous increase in S and σ with increasing temperature. The micro (1 h BM-SPS) and nanocrystalline (5 h BM-SPS) alloys exhibited a power factor (S2σ) of 0.57 and 1.02 mWm−1K−2, respectively, at 860 K. The microcrystalline sample had a total thermal conductivity similar to bulk TiNiSn sample. The nanocrystalline alloy exhibited a ZT of 0.047 at 860 K. The microcrystalline alloy showed a ZT to 0.144 at 860 K, in comparison to the nanocrystalline alloy.
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Affiliation(s)
- Anirudha Karati
- Department of Chemistry, Indian Institute of Technology Madras, Chennai, India
| | - M Nagini
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras, Chennai, India
| | - Sanyukta Ghosh
- Thermoelectric Materials and Devices Laboratory, Department of Physics, Indian Institute of Science, Bangalore, India
| | - Rajashekhara Shabadi
- Faculty of Science and Technology, UMET, University of Lille, Villeneuve-d'Ascq, France
| | - K G Pradeep
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras, Chennai, India
| | - Ramesh Chandra Mallik
- Thermoelectric Materials and Devices Laboratory, Department of Physics, Indian Institute of Science, Bangalore, India
| | - B S Murty
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras, Chennai, India.
| | - U V Varadaraju
- Department of Chemistry, Indian Institute of Technology Madras, Chennai, India
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40
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Zhong T, Pan M, Gao G, Fu H, Wu M, Liu JM. Sodium bismuth dichalcogenides: candidates for ferroelectric high-mobility semiconductors for multifunctional applications. Phys Chem Chem Phys 2019; 21:8553-8558. [PMID: 30964130 DOI: 10.1039/c9cp00336c] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/15/2023]
Abstract
The combination of ferroelectricity with narrow-gap high-mobility semiconductors may not only entail both functions of nonvolatile memory and efficient manipulation of signals, but may also facilitate efficient ferroelectric photovoltaics and thermoelectrics. However, these applications are hindered by the wide gap and poor mobility of current ferroelectrics. A recent study (J. Am. Chem. Soc., 2018, 140, 3736) reported a facile, general, low-temperature, and size tunable solution phase synthesis of NaBiS2 and NaBiSe2 that are made of relatively abundant or biocompatible elements, which enables their large-scale practical applications. Herein we show first-principles evidence of their ferroelectricity with a large polarization (∼33 μC cm-2), a moderate bandgap (∼1.6 eV) and a high electron-mobility (∼104 cm2 V-1 s-1). Although they have a relatively small switching barrier, their ferroelectricity can be robust under ambient conditions with enhanced polarization upon either application of a small tensile strain or ion doping, where distortion can be increased and multiferroics may also be obtained, despite reduced mobility. Considering previous reports on photovoltaics and thermoelectrics of similar compounds, sodium bismuth dichalcogenides might be tuned for higher performance with the coexistence of these desirable properties.
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Affiliation(s)
- Tingting Zhong
- School of Physics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China.
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41
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Hori T, Shiomi J. Tuning phonon transport spectrum for better thermoelectric materials. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2018; 20:10-25. [PMID: 31001366 PMCID: PMC6454406 DOI: 10.1080/14686996.2018.1548884] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/15/2018] [Revised: 11/13/2018] [Accepted: 11/13/2018] [Indexed: 06/09/2023]
Abstract
The figure of merit of thermoelectric materials can be increased by suppressing the lattice thermal conductivity without degrading electrical properties. Phonons are the carriers for lattice thermal conduction, and their transport can be impeded by nanostructuring, owing to the recent progress in nanotechnology. The key question for further improvement of thermoelectric materials is how to realize ultimate structure with minimum lattice thermal conductivity. From spectral viewpoint, this means to impede transport of phonons in the entire spectral domain with noticeable contribution to lattice thermal conductivity that ranges in general from subterahertz to tens of terahertz in frequency. To this end, it is essential to know how the phonon transport varies with the length scale, morphology, and composition of nanostructures, and how effects of different nanostructures can be mutually adopted in view of the spectral domain. Here we review recent advances in analyzing such spectral impedance of phonon transport on the basis of various effects including alloy scattering, boundary scattering, and particle resonance.
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Affiliation(s)
- Takuma Hori
- Department of Mechanical Engineering, Tokyo University of Science, Noda, Japan
| | - Junichiro Shiomi
- Department of Mechanical Engineering, The University of Tokyo, Tokyo, Japan
- Center for Materials Research by Information Integration (CMI2), Research and Services Division of Materials Data and Integrated System (MaDIS), National Institute for Materials Science, Tsukuba, Japan
- CREST, Japan Science and Technology Agency, Kawaguchi, Japan
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42
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Braun JL, Rost CM, Lim M, Giri A, Olson DH, Kotsonis G, Stan G, Brenner DW, Maria JP, Hopkins PE. Charge-Induced Disorder Controls the Thermal Conductivity of Entropy-Stabilized Oxides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1805004. [PMID: 30368943 PMCID: PMC9486463 DOI: 10.1002/adma.201805004] [Citation(s) in RCA: 68] [Impact Index Per Article: 11.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/01/2018] [Revised: 09/12/2018] [Indexed: 05/17/2023]
Abstract
Manipulating a crystalline material's configurational entropy through the introduction of unique atomic species can produce novel materials with desirable mechanical and electrical properties. From a thermal transport perspective, large differences between elemental properties such as mass and interatomic force can reduce the rate at which phonons carry heat and thus reduce the thermal conductivity. Recent advances in materials synthesis are enabling the fabrication of entropy-stabilized ceramics, opening the door for understanding the implications of extreme disorder on thermal transport. Measuring the structural, mechanical, and thermal properties of single-crystal entropy-stabilized oxides, it is shown that local ionic charge disorder can effectively reduce thermal conductivity without compromising mechanical stiffness. These materials demonstrate similar thermal conductivities to their amorphous counterparts, in agreement with the theoretical minimum limit, resulting in this class of material possessing the highest ratio of elastic modulus to thermal conductivity of any isotropic crystal.
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Affiliation(s)
- Jeffrey L. Braun
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
| | - Christina M. Rost
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
| | - Mina Lim
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
| | - Ashutosh Giri
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
| | - David H. Olson
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
| | - George Kotsonis
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
| | - Gheorghe Stan
- Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Donald W. Brenner
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
| | - Jon-Paul Maria
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
| | - Patrick E. Hopkins
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, USA
- Department of Physics, University of Virginia, Charlottesville, Virginia 22904, USA
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43
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Calder S, An K, Boehler R, Dela Cruz CR, Frontzek MD, Guthrie M, Haberl B, Huq A, Kimber SAJ, Liu J, Molaison JJ, Neuefeind J, Page K, Dos Santos AM, Taddei KM, Tulk C, Tucker MG. A suite-level review of the neutron powder diffraction instruments at Oak Ridge National Laboratory. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2018; 89:092701. [PMID: 30278771 DOI: 10.1063/1.5033906] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/06/2018] [Accepted: 07/19/2018] [Indexed: 06/08/2023]
Abstract
The suite of neutron powder diffractometers at Oak Ridge National Laboratory (ORNL) utilizes the distinct characteristics of the Spallation Neutron Source and High Flux Isotope Reactor to enable the measurements of powder samples over an unparalleled regime at a single laboratory. Full refinements over large Q ranges, total scattering methods, fast measurements under changing conditions, and a wide array of sample environments are available. This article provides a brief overview of each powder instrument at ORNL and details the complementarity across the suite. Future directions for the powder suite, including upgrades and new instruments, are also discussed.
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Affiliation(s)
- S Calder
- Neutron Scattering Division, Oak Ridge National Laboratory, 1 Bethel Valley Rd., Oak Ridge, Tennessee 37831, USA
| | - K An
- Neutron Scattering Division, Oak Ridge National Laboratory, 1 Bethel Valley Rd., Oak Ridge, Tennessee 37831, USA
| | - R Boehler
- Neutron Scattering Division, Oak Ridge National Laboratory, 1 Bethel Valley Rd., Oak Ridge, Tennessee 37831, USA
| | - C R Dela Cruz
- Neutron Scattering Division, Oak Ridge National Laboratory, 1 Bethel Valley Rd., Oak Ridge, Tennessee 37831, USA
| | - M D Frontzek
- Neutron Scattering Division, Oak Ridge National Laboratory, 1 Bethel Valley Rd., Oak Ridge, Tennessee 37831, USA
| | - M Guthrie
- European Spallation Source, Lund 221 00, Sweden
| | - B Haberl
- Neutron Scattering Division, Oak Ridge National Laboratory, 1 Bethel Valley Rd., Oak Ridge, Tennessee 37831, USA
| | - A Huq
- Neutron Scattering Division, Oak Ridge National Laboratory, 1 Bethel Valley Rd., Oak Ridge, Tennessee 37831, USA
| | - S A J Kimber
- Neutron Scattering Division, Oak Ridge National Laboratory, 1 Bethel Valley Rd., Oak Ridge, Tennessee 37831, USA
| | - J Liu
- Neutron Scattering Division, Oak Ridge National Laboratory, 1 Bethel Valley Rd., Oak Ridge, Tennessee 37831, USA
| | - J J Molaison
- Neutron Scattering Division, Oak Ridge National Laboratory, 1 Bethel Valley Rd., Oak Ridge, Tennessee 37831, USA
| | - J Neuefeind
- Neutron Scattering Division, Oak Ridge National Laboratory, 1 Bethel Valley Rd., Oak Ridge, Tennessee 37831, USA
| | - K Page
- Neutron Scattering Division, Oak Ridge National Laboratory, 1 Bethel Valley Rd., Oak Ridge, Tennessee 37831, USA
| | - A M Dos Santos
- Neutron Scattering Division, Oak Ridge National Laboratory, 1 Bethel Valley Rd., Oak Ridge, Tennessee 37831, USA
| | - K M Taddei
- Neutron Scattering Division, Oak Ridge National Laboratory, 1 Bethel Valley Rd., Oak Ridge, Tennessee 37831, USA
| | - C Tulk
- Neutron Scattering Division, Oak Ridge National Laboratory, 1 Bethel Valley Rd., Oak Ridge, Tennessee 37831, USA
| | - M G Tucker
- Neutron Scattering Division, Oak Ridge National Laboratory, 1 Bethel Valley Rd., Oak Ridge, Tennessee 37831, USA
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44
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Uchiyama H, Oshima Y, Patterson R, Iwamoto S, Shiomi J, Shimamura K. Phonon Lifetime Observation in Epitaxial ScN Film with Inelastic X-Ray Scattering Spectroscopy. PHYSICAL REVIEW LETTERS 2018; 120:235901. [PMID: 29932681 DOI: 10.1103/physrevlett.120.235901] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/18/2017] [Revised: 03/21/2018] [Indexed: 06/08/2023]
Abstract
Phonon-phonon scattering dominates the thermal properties in nonmetallic materials, and it directly influences device performance in applications. The understanding of the scattering has been progressing using computational approaches, and the direct and systematic observation of phonon modes that include momentum dependences is desirable. We report experimental data on the phonon dispersion curves and lifetimes in an epitaxially grown ScN film using inelastic x-ray scattering measurements. The momentum dependence of the optical phonon lifetimes is estimated from the spectral width, and the highest-energy phonon mode around the zone center is found to possess a short lifetime of 0.21 ps. A comparison with first-principles calculations shows that our observed phonon lifetimes are quantitatively explained by three-body phonon-phonon interactions.
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Affiliation(s)
- H Uchiyama
- Research and Utilization Division, Japan Synchrotron Radiation Research Institute (JASRI), SPring-8, 1-1-1 Koto, Sayo, Hyogo 679-5198, Japan
| | - Y Oshima
- Optical Single Crystals Group, Environment and Energy Materials Research Division, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - R Patterson
- School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052, Australia
| | - S Iwamoto
- Department of Mechanical Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
| | - J Shiomi
- Department of Mechanical Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
| | - K Shimamura
- Optical Single Crystals Group, Environment and Energy Materials Research Division, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
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45
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Gao W, Wang Z, Huang J, Liu Z. Extraordinary Thermoelectric Performance Realized in Hierarchically Structured AgSbSe 2 with Ultralow Thermal Conductivity. ACS APPLIED MATERIALS & INTERFACES 2018; 10:18685-18692. [PMID: 29767496 DOI: 10.1021/acsami.8b03243] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Thermoelectric conversion from low-grade heat to electricity is regarded as the highly reliable and environmentally friendly technology in energy-harvesting area. However, how to develop efficient thermoelectric materials using a simple fabrication method is still a critical challenge in thermoelectric community. Here, we first fabricate the high thermoelectric performance of Ca-doped AgSbSe2 with a hierarchical microstructure using a facile approach, namely, mechanical alloying (for only 30 min) and a quick hot-pressing method. The hierarchical microstructure, including point defects (atomic scale), dislocations, and nanoprecipitates (nanoscale) as well as grain boundaries (microscale), strongly scatters phonons with comparable sizes without deterioration of carrier mobility. Because of the higher carrier concentration of nanostructured AgSbSe2 than that of coarse-grain AgSbSe2, power factor can also be improved slightly after nanostructuring. Ca doping further optimizes the carrier concentration and creates the point-defect scattering of phonons, leading to the ultralow lattice thermal conductivity ∼0.27 W m-1 K-1 at 673 K and thus largely improving the peak ZT up to 1.2. The high thermoelectric performance in combination with a facile fabrication method highlights AgSbSe2-based materials as robust thermoelectric candidates for energy harvesting.
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Affiliation(s)
| | | | | | - Zihang Liu
- Department of Physics and TcSUH , University of Houston , Houston , Texas 77204 , United States
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46
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Rosales BA, White MA, Vela J. Solution-Grown Sodium Bismuth Dichalcogenides: Toward Earth-Abundant, Biocompatible Semiconductors. J Am Chem Soc 2018; 140:3736-3742. [DOI: 10.1021/jacs.7b12873] [Citation(s) in RCA: 31] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
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47
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Viñes F, Konstantatos G, Illas F. Matildite Contact with Media: First-Principles Study of AgBiS 2 Surfaces and Nanoparticle Morphology. J Phys Chem B 2018; 122:521-526. [PMID: 28749664 DOI: 10.1021/acs.jpcb.7b03967] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
Motivated by the interest in AgBiS2 material for solar light harvesting applications, a detailed bulk first-principles quantum mechanical study of its surface properties is presented. Density functional theory based calculations with the Perdew-Burke-Ernzerhof functional have been carried out for different surface orientations and terminations of the matildite polymorph. From the results, two particularly stable facets are predicted to dominate Wulff shaped AgBiS2 nanoparticles. These are the (001) type nonpolar surface and the (111) polar terminations where facets are exposed containing solely Ag or S atoms. The Wulff equilibrium shape is predicted to be a cube with only two edges capped. This particular shape explains a previously reported surface enrichment of Ag with respect to Bi of ∼1.5. The (001) surfaces display an ionic character similar to bulk AgBiS2, with a low work function of 4.31 eV, although the inspection of the density of states (DOS) reveals a bandgap increased by 0.3 eV compared to bulk. This surface effect could explain the bulk wavelength overestimation of the absorption coefficient decay, as previously determined. Last but not least, the DOS of the (111) polar termination reveals a metallic character, where Fermi level is located below that on the (001) surfaces. Possible implications of the different electronic structure of these surfaces in the reported photoactivity are discussed.
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Affiliation(s)
- Francesc Viñes
- Departament de Ciència de Materials i Química Física & Institut de Química Teòrica i Computacional (IQTCUB), Universitat de Barcelona , C/Martí i Franquès 1, 08028 Barcelona, Spain
| | - Gerasimos Konstantatos
- ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology , 08860 Castelldefels (Barcelona), Spain.,ICREA-Institució Catalana de Recerca i Estudis Avançats , Passeig Lluís Companys 23, 08010 Barcelona, Spain
| | - Francesc Illas
- Departament de Ciència de Materials i Química Física & Institut de Química Teòrica i Computacional (IQTCUB), Universitat de Barcelona , C/Martí i Franquès 1, 08028 Barcelona, Spain
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48
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Thermal Stability and Tuning of Thermoelectric Properties of Ag1−xSb1+xTe2+x (0 ≤ x ≤ 0.4) Alloys. APPLIED SCIENCES-BASEL 2018. [DOI: 10.3390/app8010052] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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49
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Ren P, Liu Y, He J, Lv T, Gao J, Xu G. Recent advances in inorganic material thermoelectrics. Inorg Chem Front 2018. [DOI: 10.1039/c8qi00366a] [Citation(s) in RCA: 49] [Impact Index Per Article: 8.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/13/2023]
Abstract
Time line of representative inorganic bulk thermoelectric materials from 1960s to the present.
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Affiliation(s)
- Pan Ren
- Beijing Municipal Key Laboratory of Advanced Energy Materials and Technology
- School of Materials Science and Engineering
- University of Science and Technology Beijing
- Beijing 100083
- China
| | - Yamei Liu
- Department of Physics and Astronomy
- Clemson University
- Clemson
- USA
| | - Jian He
- Department of Physics and Astronomy
- Clemson University
- Clemson
- USA
| | - Tu Lv
- Beijing Municipal Key Laboratory of Advanced Energy Materials and Technology
- School of Materials Science and Engineering
- University of Science and Technology Beijing
- Beijing 100083
- China
| | - Junling Gao
- Beijing Municipal Key Laboratory of Advanced Energy Materials and Technology
- School of Materials Science and Engineering
- University of Science and Technology Beijing
- Beijing 100083
- China
| | - Guiying Xu
- Beijing Municipal Key Laboratory of Advanced Energy Materials and Technology
- School of Materials Science and Engineering
- University of Science and Technology Beijing
- Beijing 100083
- China
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50
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Lory PF, Pailhès S, Giordano VM, Euchner H, Nguyen HD, Ramlau R, Borrmann H, Schmidt M, Baitinger M, Ikeda M, Tomeš P, Mihalkovič M, Allio C, Johnson MR, Schober H, Sidis Y, Bourdarot F, Regnault LP, Ollivier J, Paschen S, Grin Y, de Boissieu M. Direct measurement of individual phonon lifetimes in the clathrate compound Ba 7.81Ge 40.67Au 5.33. Nat Commun 2017; 8:491. [PMID: 28887470 PMCID: PMC5591192 DOI: 10.1038/s41467-017-00584-7] [Citation(s) in RCA: 36] [Impact Index Per Article: 5.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/16/2016] [Accepted: 07/10/2017] [Indexed: 11/09/2022] Open
Abstract
Engineering lattice thermal conductivity requires to control the heat carried by atomic vibration waves, the phonons. The key parameter for quantifying it is the phonon lifetime, limiting the travelling distance, whose determination is however at the limits of instrumental capabilities. Here, we show the achievement of a direct quantitative measurement of phonon lifetimes in a single crystal of the clathrate Ba7.81Ge40.67Au5.33, renowned for its puzzling ‘glass-like’ thermal conductivity. Surprisingly, thermal transport is dominated by acoustic phonons with long lifetimes, travelling over distances of 10 to 100 nm as their wave-vector goes from 0.3 to 0.1 Å−1. Considering only low-energy acoustic phonons, and their observed lifetime, leads to a calculated thermal conductivity very close to the experimental one. Our results challenge the current picture of thermal transport in clathrates, underlining the inability of state-of-the-art simulations to reproduce the experimental data, thus representing a crucial experimental input for theoretical developments. Phonon lifetime is a fundamental parameter of thermal transport however its determination is challenging. Using inelastic neutron scattering and the neutron resonant spin-echo technique, Lory et al. determine the acoustic phonon lifetime in a single crystal of clathrate Ba7.81Ge40.67Au5.33.
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Affiliation(s)
- Pierre-François Lory
- Institut Laue-Langevin, Grenoble, F-38000, France.,University Grenoble Alpes, CNRS, Grenoble-INP, SIMaP, F-38000, Grenoble, France
| | - Stéphane Pailhès
- University Lyon, University Claude Bernard Lyon 1, CNRS, Institute of Light and Matter, F-69622, Villeurbanne, France.
| | - Valentina M Giordano
- University Lyon, University Claude Bernard Lyon 1, CNRS, Institute of Light and Matter, F-69622, Villeurbanne, France
| | - Holger Euchner
- Institute of Materials Science and Technology, Vienna University of Technology, 1040, Vienna, Austria
| | - Hong Duong Nguyen
- Max-Planck-Institut für Chemische Physik fester Stoffe, 01187, Dresden, Germany
| | - Reiner Ramlau
- Max-Planck-Institut für Chemische Physik fester Stoffe, 01187, Dresden, Germany
| | - Horst Borrmann
- Max-Planck-Institut für Chemische Physik fester Stoffe, 01187, Dresden, Germany
| | - Marcus Schmidt
- Max-Planck-Institut für Chemische Physik fester Stoffe, 01187, Dresden, Germany
| | - Michael Baitinger
- Max-Planck-Institut für Chemische Physik fester Stoffe, 01187, Dresden, Germany
| | - Matthias Ikeda
- Institute of Solid State Physics, Vienna University of Technology, 1040, Vienna, Austria
| | - Petr Tomeš
- Institute of Solid State Physics, Vienna University of Technology, 1040, Vienna, Austria
| | - Marek Mihalkovič
- Institute of Physics, Slovak Academy of Sciences, 84511, Bratislava, Slovakia
| | - Céline Allio
- Physikalisches Institut, Goethe-University, 60438, Frankfurt, Germany
| | | | - Helmut Schober
- Institut Laue-Langevin, Grenoble, F-38000, France.,University Grenoble Alpes, UFR PhITEM, F-38000, Grenoble, France
| | - Yvan Sidis
- Laboratoire Léon Brillouin, CNRS, CEA, UMR-12, 91191, Gif sur Yvette, France
| | | | | | | | - Silke Paschen
- Institute of Solid State Physics, Vienna University of Technology, 1040, Vienna, Austria
| | - Yuri Grin
- Max-Planck-Institut für Chemische Physik fester Stoffe, 01187, Dresden, Germany
| | - Marc de Boissieu
- University Grenoble Alpes, CNRS, Grenoble-INP, SIMaP, F-38000, Grenoble, France.
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