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Xie Z, Zhao T, Yu X, Wang J. Nonlinear Optical Properties of 2D Materials and their Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2311621. [PMID: 38618662 DOI: 10.1002/smll.202311621] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Revised: 03/12/2024] [Indexed: 04/16/2024]
Abstract
2D materials are a subject of intense research in recent years owing to their exclusive photoelectric properties. With giant nonlinear susceptibility and perfect phase matching, 2D materials have marvelous nonlinear light-matter interactions. The nonlinear optical properties of 2D materials are of great significance to the design and analysis of applied materials and functional devices. Here, the fundamental of nonlinear optics (NLO) for 2D materials is introduced, and the methods for characterizing and measuring second-order and third-order nonlinear susceptibility of 2D materials are reviewed. Furthermore, the theoretical and experimental values of second-order susceptibility χ(2) and third-order susceptibility χ(3) are tabulated. Several applications and possible future research directions of second-harmonic generation (SHG) and third-harmonic generation (THG) for 2D materials are presented.
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Affiliation(s)
- Zhixiang Xie
- National Research Center for Optical Sensors/communications Integrated Networks, School of Electronic Science and Engineering, Southeast University, 2 Sipailou, Nanjing, 210096, China
| | - Tianxiang Zhao
- National Research Center for Optical Sensors/communications Integrated Networks, School of Electronic Science and Engineering, Southeast University, 2 Sipailou, Nanjing, 210096, China
| | - Xuechao Yu
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu, 215123, China
| | - Junjia Wang
- National Research Center for Optical Sensors/communications Integrated Networks, School of Electronic Science and Engineering, Southeast University, 2 Sipailou, Nanjing, 210096, China
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2
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Liu P, Wen H, Ren L, Shi L, Zhang X. χ (2) nonlinear photonics in integrated microresonators. FRONTIERS OF OPTOELECTRONICS 2023; 16:18. [PMID: 37460874 DOI: 10.1007/s12200-023-00073-4] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2023] [Accepted: 05/22/2023] [Indexed: 07/20/2023]
Abstract
Second-order (χ(2)) optical nonlinearity is one of the most common mechanisms for modulating and generating coherent light in photonic devices. Due to strong photon confinement and long photon lifetime, integrated microresonators have emerged as an ideal platform for investigation of nonlinear optical effects. However, existing silicon-based materials lack a χ(2) response due to their centrosymmetric structures. A variety of novel material platforms possessing χ(2) nonlinearity have been developed over the past two decades. This review comprehensively summarizes the progress of second-order nonlinear optical effects in integrated microresonators. First, the basic principles of χ(2) nonlinear effects are introduced. Afterward, we highlight the commonly used χ(2) nonlinear optical materials, including their material properties and respective functional devices. We also discuss the prospects and challenges of utilizing χ(2) nonlinearity in the field of integrated microcavity photonics.
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Affiliation(s)
- Pengfei Liu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hao Wen
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Linhao Ren
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Lei Shi
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China.
- Optics Valley Laboratory, Wuhan, 430074, China.
| | - Xinliang Zhang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
- Optics Valley Laboratory, Wuhan, 430074, China
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3
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Lu K, Luo M, Gao W, Wang QJ, Sun H, Nam D. Strong second-harmonic generation by sublattice polarization in non-uniformly strained monolayer graphene. Nat Commun 2023; 14:2580. [PMID: 37142588 PMCID: PMC10160016 DOI: 10.1038/s41467-023-38344-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/26/2022] [Accepted: 04/27/2023] [Indexed: 05/06/2023] Open
Abstract
Despite the potential of graphene for building a variety of quantum photonic devices, its centrosymmetric nature forbids the observation of second harmonic generation (SHG) for developing second-order nonlinear devices. To activate SHG in graphene, extensive research efforts have been directed towards disrupting graphene's inversion symmetry using external stimuli like electric fields. However, these methods fail to engineer graphene's lattice symmetry, which is the root cause of the forbidden SHG. Here, we harness strain engineering to directly manipulate graphene's lattice arrangement and induce sublattice polarization to activate SHG. Surprisingly, the SHG signal is boosted 50-fold at low temperatures, which can be explained by resonant transitions between strain-induced pseudo-Landau levels. The second-order susceptibility of strained graphene is found to be larger than that of hexagonal boron nitride with intrinsic broken inversion symmetry. Our demonstration of strong SHG in strained graphene offers promising possibilities for developing high-efficiency nonlinear devices for integrated quantum circuits.
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Affiliation(s)
- Kunze Lu
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Manlin Luo
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Qi Jie Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Hao Sun
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore.
| | - Donguk Nam
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore.
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Wang X, Chen X, Ma J, Gou S, Guo X, Tong L, Zhu J, Xia Y, Wang D, Sheng C, Chen H, Sun Z, Ma S, Riaud A, Xu Z, Cong C, Qiu Z, Zhou P, Xie Y, Bian L, Bao W. Pass-Transistor Logic Circuits Based on Wafer-Scale 2D Semiconductors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2202472. [PMID: 35728050 DOI: 10.1002/adma.202202472] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2022] [Revised: 06/09/2022] [Indexed: 06/15/2023]
Abstract
2D semiconductors, such as molybdenum disulfide (MoS2 ), have attracted tremendous attention in constructing advanced monolithic integrated circuits (ICs) for future flexible and energy-efficient electronics. However, the development of large-scale ICs based on 2D materials is still in its early stage, mainly due to the non-uniformity of the individual devices and little investigation of device and circuit-level optimization. Herein, a 4-inch high-quality monolayer MoS2 film is successfully synthesized, which is then used to fabricate top-gated (TG) MoS2 field-effect transistors with wafer-scale uniformity. Some basic circuits such as static random access memory and ring oscillators are examined. A pass-transistor logic configuration based on pseudo-NMOS is then employed to design more complex MoS2 logic circuits, which are successfully fabricated with proper logic functions tested. These preliminary integration efforts show the promising potential of wafer-scale 2D semiconductors for application in complex ICs.
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Affiliation(s)
- Xinyu Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Xinyu Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Jingyi Ma
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Saifei Gou
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Xiaojiao Guo
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Ling Tong
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Junqiang Zhu
- School of Information Science and Engineering, Fudan University, Shanghai, 200433, China
| | - Yin Xia
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Die Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Chuming Sheng
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Honglei Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Zhengzong Sun
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Shunli Ma
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Antoine Riaud
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Zihan Xu
- Shenzhen Six Carbon Technology, Shenzhen, 518055, China
| | - Chunxiao Cong
- School of Information Science and Engineering, Fudan University, Shanghai, 200433, China
| | - Zhijun Qiu
- School of Information Science and Engineering, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Yufeng Xie
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
| | - Lifeng Bian
- Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Wenzhong Bao
- State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China
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Lo TW, Chen X, Zhang Z, Zhang Q, Leung CW, Zayats AV, Lei D. Plasmonic Nanocavity Induced Coupling and Boost of Dark Excitons in Monolayer WSe 2 at Room Temperature. NANO LETTERS 2022; 22:1915-1921. [PMID: 35225629 DOI: 10.1021/acs.nanolett.1c04360] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Spin-forbidden excitons in monolayer transition metal dichalcogenides are optically inactive at room temperature. Probing and manipulating these dark excitons are essential for understanding exciton spin relaxation and valley coherence of these 2D materials. Here, we show that the coupling of dark excitons to a metal nanoparticle-on-mirror cavity leads to plasmon-induced resonant emission with the intensity comparable to that of the spin-allowed bright excitons. A three-state quantum model combined with full-wave electrodynamic calculations reveals that the radiative decay rate of the dark excitons can be enhanced by nearly 6 orders of magnitude through the Purcell effect, therefore compensating its intrinsic nature of weak radiation. Our nanocavity approach provides a useful paradigm for understanding the room-temperature dynamics of dark excitons, potentially paving the road for employing dark exciton in quantum computing and nanoscale optoelectronics.
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Affiliation(s)
- Tsz Wing Lo
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S.A.R
- Department of Applied Physics, The Hong Kong Polytechnic University, 11 Yuk Choi Road, Hung Hom, Hong Kong S.A.R
| | - Xiaolin Chen
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, 11 Yuk Choi Road, Hung Hom, Hong Kong S.A.R
| | - Zhedong Zhang
- Department of Physics, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S.A.R
| | - Qiang Zhang
- Department of Physics and Optoelectronics, Key Lab of Advanced Transducers and Intelligent Control System of Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China
| | - Chi Wah Leung
- Department of Applied Physics, The Hong Kong Polytechnic University, 11 Yuk Choi Road, Hung Hom, Hong Kong S.A.R
| | - Anatoly V Zayats
- Department of Physics and London Centre for Nanotechnology, King's College London, Strand, London WC2R 2LS, United Kingdom
| | - Dangyuan Lei
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S.A.R
- Department of Applied Physics, The Hong Kong Polytechnic University, 11 Yuk Choi Road, Hung Hom, Hong Kong S.A.R
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6
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Bello L, Strinati MC, Ben-Ami S, Pe'er A. Pairwise Mode Locking in Dynamically Coupled Parametric Oscillators. PHYSICAL REVIEW LETTERS 2021; 126:083601. [PMID: 33709724 DOI: 10.1103/physrevlett.126.083601] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2020] [Revised: 11/23/2020] [Accepted: 01/26/2021] [Indexed: 06/12/2023]
Abstract
Mode locking in lasers is a collective effect, where due to a weak coupling a large number of frequency modes lock their phases to oscillate in unison, forming an ultrashort pulse in time. We demonstrate an analogous collective effect in coupled parametric oscillators, which we term "pairwise mode locking," where many pairs of modes with twin frequencies (symmetric around the center carrier) oscillate simultaneously with a locked phase sum, while the phases of individual modes remain undefined. Thus, despite being broadband and multimode, the emission is not pulsed and lacks first-order coherence, while possessing a very high degree of second-order coherence. Our configuration comprises two coupled parametric oscillators within identical multimode cavities, where the coupling between the oscillators is modulated in time at the repetition rate of the cavity modes, with some analogy to active mode locking in lasers. We demonstrate pairwise mode locking in a radio-frequency experiment, covering over an octave of bandwidth with approximately 20 resonant mode-locked pairs, filling most of the available bandwidth between dc and the pump frequency. We accompany our experiment with an analytic model that accounts for the properties of the coupled parametric oscillators near threshold.
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Affiliation(s)
- Leon Bello
- Department of Physics and BINA Center of Nanotechnology, Bar-Ilan University, 52900 Ramat-Gan, Israel
| | | | - Shai Ben-Ami
- Department of Physics and BINA Center of Nanotechnology, Bar-Ilan University, 52900 Ramat-Gan, Israel
| | - Avi Pe'er
- Department of Physics and BINA Center of Nanotechnology, Bar-Ilan University, 52900 Ramat-Gan, Israel
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7
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Guo Q, Ou Z, Tang J, Zhang J, Lu F, Wu K, Zhang D, Zhang S, Xu H. Efficient Frequency Mixing of Guided Surface Waves by Atomically Thin Nonlinear Crystals. NANO LETTERS 2020; 20:7956-7963. [PMID: 33172279 DOI: 10.1021/acs.nanolett.0c02736] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Monolayer transition metal dichalcogenides possess considerable second-order nonlinear coefficients but a limited efficiency of frequency conversion due to the short interaction length with light under the typical direct illumination. Here, we demonstrate an efficient frequency mixing of the guided surface waves on a monolayer tungsten disulfide (WS2) by simultaneously lifting the temporal and spatial overlap of the guided wave and the nonlinear crystal. Three orders-of-magnitude enhancement of the conversion efficiency was achieved in the counter-propagating excitation configuration. Also, the frequency-mixing signals are highly collimated, with the emission direction and polarization controlled, respectively, by the pump frequencies and the rotation angle of WS2 relative to the propagation direction of the guided waves. These results indicate that the rules of nonlinear frequency conversion are applicable even when the crystal is scaled down to the ultimate single-layer limit. This study provides a versatile platform to enhance the nonlinear optical response of 2D materials and favor the scalable generation of a coherent light source and entangled photon pairs.
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Affiliation(s)
| | | | | | | | - Fengya Lu
- Institute of Photonics, Department of Optics and Optical Engineering, University of Science and Technology of China, Hefei, Anhui 230026, China
| | | | - Douguo Zhang
- Institute of Photonics, Department of Optics and Optical Engineering, University of Science and Technology of China, Hefei, Anhui 230026, China
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Wang Y, Ghotbi M, Das S, Dai Y, Li S, Hu X, Gan X, Zhao J, Sun Z. Difference frequency generation in monolayer MoS 2. NANOSCALE 2020; 12:19638-19643. [PMID: 32524108 DOI: 10.1039/d0nr01994a] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Difference frequency generation has long been employed for numerous applications, such as coherent light generation, sensing and imaging. Here, we demonstrate difference frequency generation down to atomic thickness in monolayer molybdenum disulfide. By mixing femtosecond optical pulses at wavelength of 406 nm with tunable pulses in the spectral range of 1300-1520 nm, we generate tunable pulses across the spectral range of 550-590 nm with frequency conversion efficiency up to ∼2 × 10-4. The second-order nonlinear optical susceptibility of monolayer molybdenum disulfide, χ, is calculated as ∼1.8 × 10-8 m V-1, comparable to the previous results demonstrated with second harmonic generation. Such a highly efficient down-conversion nonlinear optical process in two-dimensional layered materials may open new ways to their nonlinear optical applications, such as coherent light generation and amplification.
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Affiliation(s)
- Yadong Wang
- MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China.
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Gahlawat J, Dahiya S, Singh M. High Gain Coefficient Parametric Amplification of Optical Phonon Mode in Magnetized AIIIBV Semiconductor Plasmas. ARABIAN JOURNAL FOR SCIENCE AND ENGINEERING 2020. [DOI: 10.1007/s13369-020-04834-7] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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10
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Bruno V, DeVault C, Vezzoli S, Kudyshev Z, Huq T, Mignuzzi S, Jacassi A, Saha S, Shah YD, Maier SA, Cumming DRS, Boltasseva A, Ferrera M, Clerici M, Faccio D, Sapienza R, Shalaev VM. Negative Refraction in Time-Varying Strongly Coupled Plasmonic-Antenna-Epsilon-Near-Zero Systems. PHYSICAL REVIEW LETTERS 2020; 124:043902. [PMID: 32058792 DOI: 10.1103/physrevlett.124.043902] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2019] [Indexed: 06/10/2023]
Abstract
Time-varying metasurfaces are emerging as a powerful instrument for the dynamical control of the electromagnetic properties of a propagating wave. Here we demonstrate an efficient time-varying metasurface based on plasmonic nano-antennas strongly coupled to an epsilon-near-zero (ENZ) deeply subwavelength film. The plasmonic resonance of the metal resonators strongly interacts with the optical ENZ modes, providing a Rabi level spitting of ∼30%. Optical pumping at frequency ω induces a nonlinear polarization oscillating at 2ω responsible for an efficient generation of a phase conjugate and a negative refracted beam with a conversion efficiency that is more than 4 orders of magnitude greater compared to the bare ENZ film. The introduction of a strongly coupled plasmonic system therefore provides a simple and effective route towards the implementation of ENZ physics at the nanoscale.
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Affiliation(s)
- V Bruno
- School of Physics and Astronomy, University of Glasgow, G12 8QQ Glasgow, United Kingdom
| | - C DeVault
- Purdue Quantum Science and Engineering Institute, Purdue University 1205 West State Street, West Lafayette, Indiana 47907, USA
- School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, 1205 West State Street, West Lafayette, Indiana 47907, USA
| | - S Vezzoli
- The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2BW, United Kingdom
| | - Z Kudyshev
- Purdue Quantum Science and Engineering Institute, Purdue University 1205 West State Street, West Lafayette, Indiana 47907, USA
- School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, 1205 West State Street, West Lafayette, Indiana 47907, USA
| | - T Huq
- The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2BW, United Kingdom
| | - S Mignuzzi
- The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2BW, United Kingdom
| | - A Jacassi
- The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2BW, United Kingdom
| | - S Saha
- Purdue Quantum Science and Engineering Institute, Purdue University 1205 West State Street, West Lafayette, Indiana 47907, USA
- School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, 1205 West State Street, West Lafayette, Indiana 47907, USA
| | - Y D Shah
- School of Physics and Astronomy, University of Glasgow, G12 8QQ Glasgow, United Kingdom
| | - S A Maier
- The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2BW, United Kingdom
- Chair in Hybrid Nanosystems, Nanoinstitute Munich, Faculty of Physics, Ludwig-Maxilimians-Universitat München, 80539 München, Germany
| | - D R S Cumming
- School of Engineering, University of Glasgow, G12 8LT Glasgow, United Kingdom
| | - A Boltasseva
- Purdue Quantum Science and Engineering Institute, Purdue University 1205 West State Street, West Lafayette, Indiana 47907, USA
- School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, 1205 West State Street, West Lafayette, Indiana 47907, USA
| | - M Ferrera
- Institute of Photonics and Quantum Sciences, Heriot-Watt University, EH14 4AS Edinburgh, United Kingdom
| | - M Clerici
- School of Engineering, University of Glasgow, G12 8LT Glasgow, United Kingdom
| | - D Faccio
- School of Physics and Astronomy, University of Glasgow, G12 8QQ Glasgow, United Kingdom
| | - R Sapienza
- The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2BW, United Kingdom
| | - V M Shalaev
- Purdue Quantum Science and Engineering Institute, Purdue University 1205 West State Street, West Lafayette, Indiana 47907, USA
- School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, 1205 West State Street, West Lafayette, Indiana 47907, USA
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Bello L, Calvanese Strinati M, Dalla Torre EG, Pe'er A. Persistent Coherent Beating in Coupled Parametric Oscillators. PHYSICAL REVIEW LETTERS 2019; 123:083901. [PMID: 31491203 DOI: 10.1103/physrevlett.123.083901] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/23/2019] [Indexed: 06/10/2023]
Abstract
Coupled parametric oscillators were recently employed as simulators of artificial Ising networks, with the potential to solve computationally hard minimization problems. We demonstrate a new dynamical regime within the simplest network-two coupled parametric oscillators, where the oscillators never reach a steady state, but show persistent, full-scale, coherent beats, whose frequency reflects the coupling properties and strength. We present a detailed theoretical and experimental study and show that this new dynamical regime appears over a wide range of parameters near the oscillation threshold and depends on the nature of the coupling (dissipative or energy preserving). Thus, a system of coupled parametric oscillators transcends the Ising description and manifests unique coherent dynamics, which may have important implications for coherent computation machines.
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Affiliation(s)
- Leon Bello
- Department of Physics and BINA Center of Nanotechnology, Bar-Ilan University, 52900 Ramat-Gan, Israel
| | | | | | - Avi Pe'er
- Department of Physics and BINA Center of Nanotechnology, Bar-Ilan University, 52900 Ramat-Gan, Israel
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