Modulation of photocarrier relaxation dynamics in two-dimensional semiconductors

Light-Powered Directional Ion Transport via PFN-Br/MoS2 Heterogeneous Membranes: Band Alignment and Activation Energy Barrier Engineering

Biological photoresponsive ion transport systems consistently attract researchers' attention owing to their remarkable functions of harvesting energy from nature and participating in visual perception systems. Designing and constructing artificial light-driven ion transport devices to mimic biological counterparts remains a challenge owing to fabrication limitations in nanoconfined spaces. Herein, a typical conjugated polyelectrolyte (PFN-Br) was assembled onto a laminated MoS2M using simple solution-processing vacuum filtration, resulting in a heterogeneous three- and two-dimensional nanoporous membrane. The designed band alignment between PFN-Br and MoS2 enables effective directional ion transport under irradiation in an equilibrium solution, even against a 30-fold concentration gradient. The staggered energy structure of PFN-Br and MoS2 enhances charge separation and establishes a photogenerated potential as the driving force for ion transport. Additionally, the activation energy barrier for ion transport across the heterogeneous membrane decreased by 60% after light irradiation, considerably improving ion transport flux. The easy fabrication and high performance of the membrane in light-powered ion transport provide promising approaches for designing nanofluidic devices with possible applications in energy conversion, light-enhanced biosensing, and photoresponsive ionic devices.

Light-induced Kondo-like exciton-spin interaction in neodymium(II) doped hybrid perovskite

Tuning the properties of a pair of entangled electron and hole in a light-induced exciton is a fundamentally intriguing inquiry for quantum science. Here, using semiconducting hybrid perovskite as an exploratory platform, we discover that Nd2+-doped CH3NH3PbI3 (MAPbI3) perovskite exhibits a Kondo-like exciton-spin interaction under cryogenic and photoexcitation conditions. The feedback to such interaction between excitons in perovskite and the localized spins in Nd2+ is observed as notably prolonged carrier lifetimes measured by time-resolved photoluminescence, ~10 times to that of pristine MAPbI3 without Nd2+ dopant. From a mechanistic standpoint, such extended charge separation states are the consequence of the trap state enabled by the antiferromagnetic exchange interaction between the light-induced exciton and the localized 4 f spins of the Nd2+ in the proximity. Importantly, this Kondo-like exciton-spin interaction can be modulated by either increasing Nd2+ doping concentration that enhances the coupling between the exciton and Nd2+ 4 f spins as evidenced by elongated carrier lifetime, or by using an external magnetic field that can nullify the spin-dependent exchange interaction therein due to the unified orientations of Nd2+ spin angular momentum, thereby leading to exciton recombination at the dynamics comparable to pristine MAPbI3.

A Femtosecond Electron-Based Versatile Microscopy for Visualizing Carrier Dynamics in Semiconductors Across Spatiotemporal and Energetic Domains

Carrier dynamics detection in different dimensions (space, time, and energy) with high resolutions plays a pivotal role in the development of modern semiconductor devices, especially in low-dimensional, high-speed, and ultrasensitive devices. Here, a femtosecond electron-based versatile microscopy is reported that combines scanning ultrafast electron microscopy (SUEM) imaging and time-resolved cathodoluminescence (TRCL) detection, which allows for visualizing and decoupling different dynamic processes of carriers involved in surface and bulk in semiconductors with unprecedented spatiotemporal and energetic resolutions. The achieved spatial resolution is better than 10 nm, and the temporal resolutions for SUEM imaging and TRCL detection are ≈500 fs and ≈4.5 ps, respectively, representing state-of-the-art performance. To demonstrate its unique capability, the surface and bulk carrier dynamics involved in n-type gallium arsenide (GaAs) are directly tracked and distinguished. It is revealed, in real time and space, that hot carrier cooling, defect trapping, and interband-/defect-assisted radiative recombination in the energy domain result in ordinal super-diffusion, localization, and sub-diffusion of carriers at the surface, elucidating the crucial role of surface states on carrier dynamics. The study not only gives a comprehensive physical picture of carrier dynamics in GaAs, but also provides a powerful platform for exploring complex carrier dynamics in semiconductors for promoting their device performance.

Tailoring Broadband Nonlinear Optical Characteristics and Ultrafast Photocarrier Dynamics of Bi2O2S Nanosheets by Defect Engineering

Low-dimensional bismuth oxychalcogenides have shown promising potential in optoelectronics due to their high stability, photoresponse, and carrier mobility. However, the relevant studies on deep understanding for Bi2O2S is quite limited. Here, comprehensive experimental and computational investigations are conducted in the regulated band structure, nonlinear optical (NLO) characteristics, and carrier dynamics of Bi2O2S nanosheets via defect engineering, taking O vacancy (OV) and substitutional Se doping as examples. As the OV continuously increased to ≈35%, the optical bandgaps progressively narrow from ≈1.21 to ≈0.81 eV and NLO wavelengths are extended to near-infrared regions with enhanced saturable absorption. Simultaneously, the relaxation processes are effectively accelerated from tens of picoseconds to several picoseconds, as the generated defect energy levels can serve as both additional absorption cross-sections and fast relaxation channels supported by theoretical calculations. Furthermore, substitutional Se doping in Bi2O2S nanosheets also modulate their optical properties with the similar trends. As a proof-of-concept, passively mode-locked pulsed lasers in the ≈1.0 µm based on the defect-rich samples (≈35% OV and ≈50% Se-doping) exhibit excellent performance. This work deepens the insight of defect functions on optical properties of Bi2O2S nanosheets and provides new avenues for designing advanced photonic devices based on low-dimensional bismuth oxychalcogenides.

Photo-Assisted Ferroelectric Domain Control for α-In2Se3 Artificial Synapses Inspired by Spontaneous Internal Electric Fields

α-In2Se3 semiconductor crystals realize artificial synapses by tuning in-plane and out-of-plane ferroelectricity with diverse avenues of electrical and optical pulses. While the electrically induced ferroelectricity of α-In2Se3 shows synaptic memory operation, the optically assisted synaptic plasticity in α-In2Se3 has also been preferred for polarization flipping enhancement. Here, the synaptic memory behavior of α-In2Se3 is demonstrated by applying electrical gate voltages under white light. As a result, the induced internal electric field is identified at a polarization flipped conductance channel in α-In2Se3/hexagonal boron nitride (hBN) heterostructure ferroelectric field effect transistors (FeFETs) under white light and discuss the contribution of this built-in electric field on synapse characterization. The biased dipoles in α-In2Se3 toward potentiation polarization direction by an enhanced internal built-in electric field under illumination of white light lead to improvement of linearity for long-term depression curves with proper electric spikes. Consequently, upon applying appropriate electric spikes to α-In2Se3/hBN FeFETs with illuminating white light, the recognition accuracy values significantly through the artificial learning simulation is elevated for discriminating hand-written digit number images.

Dynamical control of nanoscale light-matter interactions in low-dimensional quantum materials

Tip-enhanced nano-spectroscopy and -imaging have significantly advanced our understanding of low-dimensional quantum materials and their interactions with light, providing a rich insight into the underlying physics at their natural length scale. Recently, various functionalities of the plasmonic tip expand the capabilities of the nanoscopy, enabling dynamic manipulation of light-matter interactions at the nanoscale. In this review, we focus on a new paradigm of the nanoscopy, shifting from the conventional role of imaging and spectroscopy to the dynamical control approach of the tip-induced light-matter interactions. We present three different approaches of tip-induced control of light-matter interactions, such as cavity-gap control, pressure control, and near-field polarization control. Specifically, we discuss the nanoscale modifications of radiative emissions for various emitters from weak to strong coupling regime, achieved by the precise engineering of the cavity-gap. Furthermore, we introduce recent works on light-matter interactions controlled by tip-pressure and near-field polarization, especially tunability of the bandgap, crystal structure, photoluminescence quantum yield, exciton density, and energy transfer in a wide range of quantum materials. We envision that this comprehensive review not only contributes to a deeper understanding of the physics of nanoscale light-matter interactions but also offers a valuable resource to nanophotonics, plasmonics, and materials science for future technological advancements.

Probing the interlayer excitation dynamics in WS2/WSe2 heterostructures with broadly tunable pump and probe energies

van der Waals heterostructures based on transition metal dichalcogenides (TMDs) provide a fascinating platform for exploring new physical phenomena and novel optoelectronic functionalities. Revealing the energy-dependence of photocarrier population dynamics in heterostructures is key for developing optoelectronic or valleytronic devices. Here, the broadband transient dynamics of interlayer excitation of a nearly-aligned WS2/WSe2 heterostructure is investigated by using energy-dependent pump-probe spectroscopy at cryogenic temperatures. Interestingly, WS2/WSe2 interlayer excitation, herein comprising a mixture of intra- and inter-layer excitons, exhibits largely constant lifetimes of a few hundred picoseconds across a broad energy range, in stark contrast to the salient energy-dependent dynamics of intralayer excitons in monolayer WSe2. While the PL emission of the WS2/WSe2 heterostructure is found to be strongly affected by electrostatic doping, the lifetimes of interlayer excitation show negligible changes. Our work elaborates the signatures of ultrafast dynamics introduced by intra- and interlayer co-existing excitonic species and enriches the understanding of interlayer couplings in van der Waals heterostructures.

Direct Observation of Photon Induced Giant Band Renormalization in 2D PdSe2 Dichalcogenide by Transient Absorption Spectroscopy

Insight into fundamental light-matter interaction as well as underlying photo-physical processes is crucial for the development of novel optoelectronic devices. Palladium diselenide (PdSe2 ), an important representative of emerging 2D noble metal dichalcogenides, has gain considerable attention owing to its unique optical, physical, and chemical properties. In this study, 2D PdSe2 nanosheets (NSs) are prepared using the liquid-phase exfoliation method. A broadband carrier relaxation dynamics from visible to near-infrared bands are revealed using a time-resolved transient absorption spectrometer, giving results that indicate band filling and bandgap renormalization (BGR) effects in the 2D PdSe2 NSs. The observed blue-shift of the transient absorption spectra at the primary stage and the subsequent red-shift can be ascribed to this BGR effect. These findings reveal the many-body character of the 2D TMDs material and may hold keys for applications in the field of optoelectronics and ultrafast photonics.

Coherent Phonon Manipulation via Electron-Phonon Interaction for Facilitated Relaxation of Metastable Centers in ZnO

Methods that allow versatile manipulation of metastable centers in semiconductors are highly important owing to their potential for quantum information processing and computations. In this study, we demonstrate that the electron-phonon interaction enables phonon participation to promote relaxation of metastable centers in ZnO, which is known for its persistent photoconductivity (PPC) effect. Experimentally, we show that continuous infrared (IR) radiation (1064 nm, ∼30 mW/cm2) promotes longitudinal optical phonons via the Fröhlich interaction and increases the PPC relaxation rate by ∼4 folds. More importantly, we discover that coherent phonons activated by an ultrashort pulse IR laser of the same power increased the relaxation rate by ∼1200-fold, as confirmed by ultrafast transient spectroscopy to be correlated to the excitation of coherent acoustic phonons via the inverse piezoelectric effect. We expect this study to provide valuable guidance for the development of novel quantum and photoactive devices.

Localized coherent phonon generation in monolayer MoSe2 from ultrafast exciton trapping at shallow traps

We report spectroscopic evidence for the ultrafast trapping of band edge excitons at defects and the subsequent generation of defect-localized coherent phonons (CPs) in monolayer MoSe2. While the photoluminescence measurement provides signals of exciton recombination at both shallow and deep traps, our time-resolved pump-probe spectroscopy on the sub-picosecond time scale detects localized CPs only from the ultrafast exciton trapping at shallow traps. Based on occupation-constrained density functional calculations, we identify the Se vacancy and the oxygen molecule adsorbed on a Se vacancy as the atomistic origins of deep and shallow traps, respectively. Establishing the correlations between the defect-induced ultrafast exciton trapping and the generation of defect-localized CPs, our work could open up new avenues to engineer photoexcited carriers through lattice defects in two-dimensional materials.

Hot Carrier Cooling and Trapping in Atomically Thin WS2 Probed by Three-Pulse Femtosecond Spectroscopy

Transition metal dichalcogenides (TMDs) have shown outstanding semiconducting properties which make them promising materials for next-generation optoelectronic and electronic devices. These properties are imparted by fundamental carrier-carrier and carrier-phonon interactions that are foundational to hot carrier cooling. Recent transient absorption studies have reported ultrafast time scales for carrier cooling in TMDs that can be slowed at high excitation densities via a hot-phonon bottleneck (HPB) and discussed these findings in the light of optoelectronic applications. However, quantitative descriptions of the HPB in TMDs, including details of the electron-lattice coupling and how cooling is affected by the redistribution of energy between carriers, are still lacking. Here, we use femtosecond pump-push-probe spectroscopy as a single approach to systematically characterize the scattering of hot carriers with optical phonons, cold carriers, and defects in a benchmark TMD monolayer of polycrystalline WS₂. By controlling the interband pump and intraband push excitations, we observe, in real-time (i) an extremely rapid "intrinsic" cooling rate of ∼18 ± 2.7 eV/ps, which can be slowed with increasing hot carrier density, (ii) the deprecation of this HPB at elevated cold carrier densities, exposing a previously undisclosed role of the carrier-carrier interactions in mediating cooling, and (iii) the interception of high energy hot carriers on the subpicosecond time scale by lattice defects, which may account for the lower photoluminescence yield of TMDs when excited above band gap.

Quenching of bright and dark excitons via deep states in the presence of SRH recombination in 2D monolayer materials

Two-dimensional (2D) monolayer materials are interesting systems due to an existence of optically non-active dark excitonic states. In this work, we formulate a theoretical model of an excitonic Auger process which can occur together with the trap-assisted recombination in such 2D structures. The interactions of intravalley excitons (bright and spin-dark ones) and intervalley excitons (momentum-dark ones) with deep states located in the energy midgap have been taken into account. The explanation of this process is important for the understanding of excitonic and photoelectrical processes which can coexist in 2D materials, like transition metal dichalcogenides and perovskites.

Tunable electronic and magnetic properties of Cr2Ge2Te6monolayer by organic molecular adsorption

Recently, two-dimensional materials are widely concerned because of their novel physical properties. Cr₂Ge₂Te₆(CGT) has been studied extensively due to its intrinsic ferromagnetism and ferromagnetic order. In this investigation, the electronic and magnetic performances of organic molecules (TCNE, TCNQ and TTF) adsorbed on CGT monolayer were studied based on the first-principles calculations systematically. The results demonstrate that the CGT presents pronounced tunable electronic and magnetic properties by the adsorption of these macromolecules. Furthermore, the Curie temperature of CGT monolayer can be enhanced significantly by the TTF adsorption. This work can provide a magnetic regulation method for CGT and explore the promising applications of the CGT for spin devices.

Strain modulation of the exciton anisotropy and carrier lifetime in black phosphorene

Manipulating excitons is of great significance to explore the optical properties of 2D materials. In this work, we investigate the excitonic properties and carrier dynamics of bilayer black phosphorene by imposing in-plane biaxial strain. The results show that the strain can modulate not only the contribution of the excitons to optical absorption but also the anisotropic shape of the first exciton. This can be ascribed to the strain effect on the band realignment as well as to changes of the parity and the electron effective mass at the CBM. At the temperature of 300 K, a 3% strain reduces the non-adiabatic coupling between the VBM and CBM and then increases the carrier lifetime by a factor of 13, and the results can be used to estimate the strain effect on the excitonic lifetime. Our results demonstrate that manipulation of the biaxial strain is a promising strategy to modulate the exciton properties of black phosphorene.

Ultrafast Dynamics of Defect-Assisted Auger Process in PdSe2 Films: Synergistic Interaction between Defect Trapping and Auger Effect

By using optical pump and terahertz probe spectroscopy, we have investigated the photocarrier dynamics in PdSe₂ films with different thicknesses. The experimental results reveal that the photocarrier relaxation consists of two components: a fast component of 2.5 ps that shows the layer-thickness independence and a slow component that has typical lifetime of 7.3 ps decreasing with the layer thickness. Interestingly, the relaxation times for both fast and slow components exhibited both pump fluence and temperature independence, which suggests that synergistic interactions between defect trapping and Auger effect dominate the photocarrier dynamics in PdSe₂ films. A model involving a defect-assisted Auger process is proposed, which can reproduce the experimental results well. The fitting results reveal that the layer-dependent lifetime is determined by the defect density rather than carrier occupancy rate after photoexcitation. Our results underscore the interplay between the Auger process and defects in two-dimensional semiconductors.

Optical Properties of Few-Layer Ti3CN MXene: From Experimental Observations to Theoretical Calculations

Despite the emerging interest in research and development of Ti₃CN MXene nanosheet (NS)-based optoelectronic devices, there is still a lack of in-depth studies of the underlying photophysical processes, like carrier relaxation dynamics and nonlinear photon absorption, operating in such devices, hindering their further and precise design. In this paper, we attempt to remedy the situation by fabricating few-layer Ti₃CN NSs via combining selective etching and molecular intercalation and by investigating the carrier relaxation possesses and broadband nonlinear optical responses via transient absorption and Z-scan techniques. These results are complemented by first-principle theoretical analyses of the optical properties. Both saturable absorption and reverse saturable absorption phenomena are observed due to multiphoton absorption effects. The analysis of these results adds to the understanding of the basic photophysical processes, which is anticipated to be beneficial for the further design of MXene-based devices.

Identifying the Intermediate Free-Carrier Dynamics Across the Charge Separation in Monolayer MoS2/ReSe2 Heterostructures

Van der Waals heterostructures composed of different two-dimensional films offer a unique platform for engineering and promoting photoelectric performances, which highly demands the understanding of photocarrier dynamics. Herein, large-scale vertically stacked heterostructures with MoS₂ and ReSe₂ monolayers are fabricated. Correspondingly, the carrier dynamics have been thoroughly investigated using different ultrafast spectroscopies, including Terahertz (THz) emission spectroscopy, time-resolved THz spectroscopy (TRTS), and near-infrared optical pump-probe spectroscopy (OPPS), providing complementary dynamic information for the out-of-plane charge separation and in-plane charge transport at different stages. The initial charge transfer (CT) within the first 170 fs, generating a transient directional current, is directly demonstrated by the THz emissions. Furthermore, the TRTS explicitly unveils an intermediate free-carrier relaxation pathway, featuring a pronounced augmentation of THz photoconductivity compared to the isolated ReSe₂ layer, which likely contains the evolution from immigrant hot charged free carriers to bounded interlayer excitons (∼0.7 ps) and the surface defect trapping (∼13 ps). In addition, the OPPS reveals a distinct enhancement in the saturable absorption along with long-lived dynamics (∼365 ps), which originated from the CT and interlayer exciton recombination. Our work provides comprehensive insight into the photocarrier dynamics across the charge separation and will help with the development of optoelectronic devices based on ReSe₂-MoS₂ heterostructures.

The nonlinear optical transition bleaching in tellurene

To date, outstanding linear and nonlinear optical properties of tellurene, caused by multiple two-dimensional (2D) phases and optical anisotropy, have attracted considerable interest for potential nanophotonics applications. In this work, the ultrafast nonlinear optical (NLO) properties of α-tellurene have been studied via Z-scan and pump-probe techniques at a broadband spectral region. Typical saturable absorption and band filling effects are observed in tellurene due to the Pauli exclusion principle. Analysis using density functional theory (DFT) computation shows the enhancements in NLO response within the ultraviolet-visible absorption spectral region are owing to the increased optical intraband transition in tellurene. Moreover, the effects of varying the photon energy of the probe pulse were explored. Our results indicated that probe pulses with higher photon energies can make smaller differential transmission signal, this effect is found to be negatively correlated with calculated joint density of states (JDOS). These results offer insights into the intrinsic photophysics of 2D tellurene, driving its applications in photonic and optoelectronic fields.

Tailoring the ultrafast and nonlinear photonics of MXenes through elemental replacement

Due to the outstanding electronic properties, unique chemical surface termination units and rich elemental compositions, MXenes have become promising candidates for the development of new generation optoelectronic devices. However, there is still a gap between advanced photonics applications and fundamental understanding of ultrafast carrier photo-physics dynamics and a nonlinear optical response in layered MXenes. Here, we present insight into the excited state relaxation processes and nonlinear optical response of few-layer Ti₃CN and Ti₃C₂ nanosheets (NSs) via transient absorption spectroscopy and Z-scan measurements. Owing to similar structural compositions, the transient absorption and nonlinear absorption characteristics behave totally opposite. In addition, photo-induced bandgap renormalization and Pauli blocking phenomena exist in Ti₃C₂ and Ti₃CN NSs, respectively. The element replacement may be a new strategy for tunable carrier kinetics and nonlinear optical response of MXenes. These research studies may provide insight into ultrafast carrier photo-physics dynamics as well as promote MXene-based advanced photonics and their applications in optoelectronic devices.

Critical Strain-Induced Photoresponse in Folded Graphene Superlattices

Strain engineering is the most effective method to break the symmetry of the graphene lattice and achieve graphene band gap tunability. However, a critical strain (>20%) is required to open the graphene band gap, and it is very difficult to achieve such a large strain. This limits the development of experimental research and optoelectronic devices based on graphene strain. In this work, we report a method for preparing large-strain graphene superlattices via surface energy engineering. The maximum strain of the curved lattice could reach 50%. In particular, our pioneering work reports the behavior of an ultrafast (as short as 6 ps) photoresponse in a strained folded graphene superlattice. The photocurrent map shows a large increase (up to 10²) of the photoresponsivity in the tensile graphene lattice, which is generated by the interaction between the strained and pristine graphene. Through Raman spectroscopy, Kelvin probe force microscopy, and high-resolution transmission electron microscopy, we demonstrate that the ultrathreshold strain in the graphene bends triggers the opening of the graphene band gap and results in a unique photovoltaic effect. This work deepens the understanding of the strain-induced change of the photoelectrical properties of graphene and proves the potential of strained graphene as a platform for the generation of novel high-speed, miniaturized graphene-based photodetectors.