1
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Peng M, He Y, Hu Y, Liu Z, Chen X, Liu Z, Yang J, Chen M, Liu W, Wu F, Li L, Dai J, Chen C, He J, Hu L, Chen C, Tang J. Te xSe 1-x Shortwave Infrared Photodiode Arrays with Monolithic Integration. NANO LETTERS 2024. [PMID: 39324698 DOI: 10.1021/acs.nanolett.4c03728] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/27/2024]
Abstract
TexSe1-x shortwave infrared (SWIR) photodetectors show promise for monolithic integration with readout integrated circuits (ROIC), making it a potential alternative to conventional expensive SWIR photodetectors. However, challenges such as a high dark current density and insufficient detection performance hinder their application in large-scale monolithic integration. Herein, we develop a ZnO/TexSe1-x heterojunction photodiode and synergistically address the interfacial elemental diffusion and dangling bonds via inserting a well-selected 0.3 nm amorphous TeO2 interfacial layer. The optimized device achieves a reduced dark current density of -3.5 × 10-5 A cm-2 at -10 mV, a broad response from 300 to 1700 nm, a room-temperature detectivity exceeding 2.03 × 1011 Jones, and a 3 dB bandwidth of 173 kHz. Furthermore, for the first time, we monolithically integrate the TexSe1-x photodiodes on ROIC (64 × 64 pixels) with the largest-scale array among all TexSe1-x-based detectors. Finally, we demonstrate its applications in transmission imaging and substance identification.
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Affiliation(s)
- Meng Peng
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China
| | - Yuming He
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China
| | - Yuxuan Hu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China
| | - Zunyu Liu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China
| | - Xinyi Chen
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China
| | - Zhiqiang Liu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China
| | - Junrui Yang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China
| | - Maohua Chen
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China
| | - Weijie Liu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China
| | - Feng Wu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China
| | - Luying Li
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China
| | - Jiangnan Dai
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China
| | - Changqing Chen
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China
| | - Jungang He
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, Hubei 430205, P. R. China
| | - Long Hu
- School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Chao Chen
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China
- Optics Valley Laboratory, Wuhan, Hubei 430074, P. R. China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China
- China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China
- Optics Valley Laboratory, Wuhan, Hubei 430074, P. R. China
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2
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Bonavolontà C, Vettoliere A, Pannico M, Crisci T, Ruggiero B, Silvestrini P, Valentino M. Investigation of Graphene Single Layer on P-Type and N-Type Silicon Heterojunction Photodetectors. SENSORS (BASEL, SWITZERLAND) 2024; 24:6068. [PMID: 39338813 PMCID: PMC11435646 DOI: 10.3390/s24186068] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2024] [Revised: 09/09/2024] [Accepted: 09/18/2024] [Indexed: 09/30/2024]
Abstract
Photodetectors are of great interest in several technological applications thanks to their capability to convert an optical signal into an electrical one through light-matter interactions. In particular, broadband photodetectors based on graphene/silicon heterojunctions could be useful in multiple applications due to their compelling performances. Here, we present a 2D photodiode heterojunction based on a graphene single layer deposited on p-type and n-type Silicon substrates. We report on the electro-optical properties of the device that have been measured in dark and light conditions in a spectral range from 400 nm to 800 nm. The comparison of the device's performance in terms of responsivity and rectification ratio is presented. Raman spectroscopy provides information on the graphene single layer's quality and oxidation. The results showcase the importance of the doping of the silicon substrate to realize an efficient heterojunction that improves the photoresponse, reducing the dark current.
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Affiliation(s)
- Carmela Bonavolontà
- CNR-ISASI, Institute of Applied Sciences and Intelligent Systems, Via Campi Flegrei 34, I-80078 Pozzuoli, Italy; (A.V.); (M.V.)
| | - Antonio Vettoliere
- CNR-ISASI, Institute of Applied Sciences and Intelligent Systems, Via Campi Flegrei 34, I-80078 Pozzuoli, Italy; (A.V.); (M.V.)
| | - Marianna Pannico
- CNR-IPCB, Institute of Polymers, Composites and Biomaterials, Via Campi Flegrei 34, I-80078 Pozzuoli, Italy;
| | - Teresa Crisci
- CNR-ISASI, Institute of Applied Sciences and Intelligent Systems, Via Pietro Castellino 111, I-80131 Napoli, Italy
| | - Berardo Ruggiero
- CNR-ISASI, Institute of Applied Sciences and Intelligent Systems, Via Campi Flegrei 34, I-80078 Pozzuoli, Italy; (A.V.); (M.V.)
| | - Paolo Silvestrini
- CNR-ISASI, Institute of Applied Sciences and Intelligent Systems, Via Campi Flegrei 34, I-80078 Pozzuoli, Italy; (A.V.); (M.V.)
- DMF—Department of Mathematics and Physics, Università della Campania “L. Vanvitelli”, I-81100 Caserta, Italy
| | - Massimo Valentino
- CNR-ISASI, Institute of Applied Sciences and Intelligent Systems, Via Campi Flegrei 34, I-80078 Pozzuoli, Italy; (A.V.); (M.V.)
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3
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Abdullah M, Younis M, Sohail MT, Wu S, Zhang X, Khan K, Asif M, Yan P. Recent Progress of 2D Materials-Based Photodetectors from UV to THz Waves: Principles, Materials, and Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402668. [PMID: 39235584 DOI: 10.1002/smll.202402668] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/04/2024] [Revised: 08/06/2024] [Indexed: 09/06/2024]
Abstract
Photodetectors are one of the most critical components for future optoelectronic systems and it undergoes significant advancements to meet the growing demands of diverse applications spanning the spectrum from ultraviolet (UV) to terahertz (THz). 2D materials are very attractive for photodetector applications because of their distinct optical and electrical properties. The atomic-thin structure, high carrier mobility, low van der Waals (vdWs) interaction between layers, relatively narrower bandgap engineered through engineering, and significant absorption coefficient significantly benefit the chip-scale production and integration of 2D materials-based photodetectors. The extremely sensitive detection at ambient temperature with ultra-fast capabilities is made possible with the adaptability of 2D materials. Here, the recent progress of photodetectors based on 2D materials, covering the spectrum from UV to THz is reported. In this report, the interaction of light with 2D materials is first deliberated on in terms of optical physics. Then, various mechanisms on which detectors work, important performance parameters, important and fruitful fabrication methods, fundamental optical properties of 2D materials, various types of 2D materials-based detectors, different strategies to improve performance, and important applications of photodetectors are discussed.
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Affiliation(s)
- Muhammad Abdullah
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Muhammad Younis
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Muhammad Tahir Sohail
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Shifang Wu
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Xiong Zhang
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Karim Khan
- Additive Manufacturing Institute, Shenzhen University, Shenzhen, 518060, China
| | - Muhammad Asif
- THz Technical Research Center of Shenzhen University, Shenzhen Key Laboratory of Micro-nano Photonic Information Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Peiguang Yan
- State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
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4
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Zhang G, Wang B, Wu H, Zhang J, Lian S, Bai W, Zhang S, Liu Z, Yang S, Ding G, Ye C, Zheng L, Wang G. Nitrogen-Doped 3D-Graphene Advances Near-Infrared Photodetector for Logic Circuits and Image Sensors Overcoming 2D Limitations. NANO LETTERS 2024; 24:10062-10071. [PMID: 39038033 DOI: 10.1021/acs.nanolett.4c01917] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/24/2024]
Abstract
The limitations of two-dimensional (2D) graphene in broadband photodetector are overcome by integrating nitrogen (N) doping into three-dimensional (3D) structures within silicon (Si) via plasma-assisted chemical vapor deposition (PACVD) technology. This contributes to the construction of vertical Schottky heterojunction broad-spectrum photodetectors and applications in logic devices and image sensors. The natural nanoscale resonant cavity structure of 3D-graphene enhances photon capture efficiency, thereby increasing photocarrier generation. N-doping can fine-tune the electronic structure, advancing the Schottky barrier height and reducing dark current. The as-fabricated photodetector exhibits exceptional self-driven photoresponse, especially at 1550 nm, with an excellent photoresponsivity (79.6 A/W), specific detectivity (1013 Jones), and rapid response of 130 μs. Moreover, it enables logic circuits, high-resolution pattern image recognition, and broadband spectra recording across the visible to near-infrared range (400-1550 nm). This research will provide new views and technical support for the development and widespread application of high-performance semiconductor-based graphene broadband detectors.
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Affiliation(s)
- Guanglin Zhang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, P. R. China
| | - Bingkun Wang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, P. R. China
| | - Huijuan Wu
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, P. R. China
| | - Jinqiu Zhang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, P. R. China
| | - Shanshui Lian
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, P. R. China
| | - Wenjun Bai
- Academy for Advanced Interdisciplinary Studies & Department of Materials Science and Engineering, Guangdong Provincial Key Laboratory of Computational Science and Material Design, Southern University of Science and Technology, Shenzhen, Guangdong 518055, P. R. China
| | - Shan Zhang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, P. R. China
| | - Zhiduo Liu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Siwei Yang
- State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
| | - Guqiao Ding
- State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
| | - Caichao Ye
- Academy for Advanced Interdisciplinary Studies & Department of Materials Science and Engineering, Guangdong Provincial Key Laboratory of Computational Science and Material Design, Southern University of Science and Technology, Shenzhen, Guangdong 518055, P. R. China
| | - Li Zheng
- State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
| | - Gang Wang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, P. R. China
- State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
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5
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Ulusoy M, Koçyiğit S, Tataroğlu A, Altındal Yerişkin S. The Electrical and Photodetector Characteristics of the Graphene:PVA/p-Si Schottky Structures Depending on Illumination Intensities. ACS OMEGA 2024; 9:32243-32255. [PMID: 39072130 PMCID: PMC11270684 DOI: 10.1021/acsomega.4c05219] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/03/2024] [Revised: 07/02/2024] [Accepted: 07/04/2024] [Indexed: 07/30/2024]
Abstract
Five samples were fabricated to obtain a diode with a PVA interface, both with and without graphene doping at different rates with high rectification in the dark. The electrospinning method was employed to apply the doped and undoped solutions, creating the interlayers. Since the diode with a 1 wt % graphene-doped PVA interlayer outperformed the other samples, the main electrical and photodetector characteristics of this structure were investigated. The electrical parameters of the diode were probed by the TE, Norde, and Cheung methods, and the parameters (n and ϕB) acquired by both approaches were significantly influenced by illumination and voltages. The interface/surface state intensity values (N ss) were also calculated in the dark and under each illumination as a function of the band/energy gap depth (E ss-E v). The time-dependent steady-state conditions and rise-decay behavior of the photocurrents during illumination were also investigated. Due to the high photocurrent values, the photosensitivity at zero bias is approximately 1.4 × 104 at 100 mW cm-2. The responsivity and detectivity values appear to be altered significantly with changes in the illumination and voltage. Additionally, a double logarithmic plot of I ph vs P reveals good linearity with slope values ranging from 0.5 to 1.
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Affiliation(s)
- Murat Ulusoy
- Department
of Physics, Faculty of Science, Gazi University, Teknikokullar, 06500 Ankara, Türkiye
| | - Serhat Koçyiğit
- Central
Laboratory Application and Research Centre, Bingol University, 12000 Bingol, Türkiye
| | - Adem Tataroğlu
- Department
of Physics, Faculty of Science, Gazi University, Teknikokullar, 06500 Ankara, Türkiye
| | - S. Altındal Yerişkin
- Department
of Chemistry and Chemical Processing Technologies, Vocational Highschool
of Technical Sciences, Gazi University, Teknikokullar, 06500 Ankara, Türkiye
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6
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Sim J, Ryoo S, Kim JS, Jang J, Ahn H, Kim D, Jung J, Kong T, Choi H, Lee YS, Lee TW, Cho K, Kang K, Lee T. Enhanced Photodetection Performance of an In Situ Core/Shell Perovskite-MoS 2 Phototransistor. ACS NANO 2024; 18:16905-16913. [PMID: 38904449 DOI: 10.1021/acsnano.4c02775] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/22/2024]
Abstract
While two-dimensional transition metal dichalcogenides (TMDCs)-based photodetectors offer prospects for high integration density and flexibility, their thinness poses a challenge regarding low light absorption, impacting photodetection sensitivity. Although the integration of TMDCs with metal halide perovskite nanocrystals (PNCs) has been known to be promising for photodetection with a high absorption coefficient of PNCs, the low charge mobility of PNCs delays efficient photocarrier injection into TMDCs. In this study, we integrated MoS2 with in situ formed core/shell PNCs with short ligands that minimize surface defects and enhance photocarrier injection. The PNCs/MoS2 heterostructure efficiently separates electrons and holes by establishing type II band alignment and consequently inducing a photogating effect. The synergistic interplay between photoconductive and photogating effects yields a high responsivity of 2.2 × 106 A/W and a specific detectivity of 9.0 × 1011 Jones. Our findings offer a promising pathway for developing low-cost, high-performance phototransistors leveraging the advantages of two-dimensional (2D) materials.
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Affiliation(s)
- Jinwoo Sim
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
| | - Sunggyu Ryoo
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
| | - Joo Sung Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
- SN DISPLAY Co., Ltd., Seoul 08826, Korea
| | - Juntae Jang
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
| | - Heebeom Ahn
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
| | - Donguk Kim
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
| | - Joonha Jung
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
| | - Taehyun Kong
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
| | - Hyeonmin Choi
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
| | - Yun Seog Lee
- Department of Mechanical Engineering, Seoul National University, Seoul 08826, Korea
| | - Tae-Woo Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
- SN DISPLAY Co., Ltd., Seoul 08826, Korea
- Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Korea
- Institute of Engineering Research, Seoul National University, Seoul 08826, Korea
| | - Kyungjune Cho
- Convergence Research Center for Solutions to Electromagnetic Interference in Future-mobility, Korea Institute of Science and Technology, Seoul 02792, Korea
| | - Keehoon Kang
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
- Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Korea
- Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Takhee Lee
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
- Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
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7
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Abbas K, Ji P, Ullah N, Shafique S, Zhang Z, Ameer MF, Qin S, Yang S. Graphene photodetectors integrated with silicon and perovskite quantum dots. MICROSYSTEMS & NANOENGINEERING 2024; 10:81. [PMID: 38911343 PMCID: PMC11190230 DOI: 10.1038/s41378-024-00722-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/10/2023] [Revised: 04/24/2024] [Accepted: 04/25/2024] [Indexed: 06/25/2024]
Abstract
Photodetectors (PDs) play a crucial role in imaging, sensing, communication systems, etc. Graphene (Gr), a leading two-dimensional material, has demonstrated significant potential for photodetection in recent years. However, its relatively weak interaction with light poses challenges for practical applications. The integration of silicon (Si) and perovskite quantum dots (PQDs) has opened new avenues for Gr in the realm of next-generation optoelectronics. This review provides a comprehensive investigation of Gr/Si Schottky junction PDs and Gr/PQD hybrid PDs as well as their heterostructures. The operating principles, design, fabrication, optimization strategies, and typical applications of these devices are studied and summarized. Through these discussions, we aim to illuminate the current challenges and offer insights into future directions in this rapidly evolving field.
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Affiliation(s)
- Kashif Abbas
- State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Peirui Ji
- State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Naveed Ullah
- State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Shareen Shafique
- Department of Microelectronic Science and Engineering, Laboratory of Clean Energy Storage and Conversion, School of Physical Science and Technology, Ningbo Collaborative Innovation Center of Nonlinear Calamity System of Ocean and Atmosphere, Ningbo University, Ningbo, 315211 China
| | - Ze Zhang
- State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Muhammad Faizan Ameer
- State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Shenghan Qin
- State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Shuming Yang
- State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, 710049 China
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8
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Fu J, Nie C, Sun F, Li G, Shi H, Wei X. Bionic visual-audio photodetectors with in-sensor perception and preprocessing. SCIENCE ADVANCES 2024; 10:eadk8199. [PMID: 38363832 PMCID: PMC10871537 DOI: 10.1126/sciadv.adk8199] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/12/2023] [Accepted: 01/17/2024] [Indexed: 02/18/2024]
Abstract
Serving as the "eyes" and "ears" of the Internet of Things, optical and acoustic sensors are the fundamental components in hardware systems. Nowadays, mainstream hardware systems, often comprising numerous discrete sensors, conversion modules, and processing units, tend to result in complex architectures that are less efficient compared to human sensory pathways. Here, a visual-audio photodetector inspired by the human perception system is proposed to enable all-in-one visual and acoustic signal detection with computing capability. This device not only captures light but also optically records sound waves, thus achieving "watching" and "listening" within a single unit. The gate-tunable positive, negative, and zero photoresponses lead to highly programmable responsivities. This programmability enables the execution of diverse functions, including visual feature extraction, object classification, and sound wave manipulation. These results showcase the potential of expanding perception approaches in neuromorphic devices, opening up new possibilities to craft intelligent and compact hardware systems.
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Affiliation(s)
- Jintao Fu
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Changbin Nie
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Feiying Sun
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China
| | - Genglin Li
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Haofei Shi
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Chongqing School, University of Chinese Academy of Sciences, Chongqing 400714, China
| | - Xingzhan Wei
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Chongqing School, University of Chinese Academy of Sciences, Chongqing 400714, China
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9
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Katiyar AK, Hoang AT, Xu D, Hong J, Kim BJ, Ji S, Ahn JH. 2D Materials in Flexible Electronics: Recent Advances and Future Prospectives. Chem Rev 2024; 124:318-419. [PMID: 38055207 DOI: 10.1021/acs.chemrev.3c00302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
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Affiliation(s)
- Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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10
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Xu M, Cui Y, Zhang T, Lu M, Yu Y. PbS QD-Coated Si Micro-Hole Array/Graphene vdW Schottky Near-Infrared Photodiode for PPG Heart Rate Measurement. SENSORS (BASEL, SWITZERLAND) 2023; 23:7214. [PMID: 37631750 PMCID: PMC10458064 DOI: 10.3390/s23167214] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/05/2023] [Revised: 08/09/2023] [Accepted: 08/14/2023] [Indexed: 08/27/2023]
Abstract
Near-infrared (NIR) photodetectors (PDs) have attracted much attention for use in noninvasive medical diagnosis and treatments. In particular, self-filtered NIR PDs are in high demand for a wide range of biomedical applications due to their ability for wavelength discrimination. In this work, we designed and then fabricated a Si micro-hole array/Graphene (Si MHA/Gr) van der Waals (vdW) Schottky NIR photodiode using a PbS quantum dot (QD) coating. The device exhibited a unique self-filtered NIR response with a responsivity of 0.7 A/W at -1 V and a response speed of 61 μs, which is higher than that seen without PbS QD coating and even in most previous Si/Gr Schottky photodiodes. The light trapping of the Si MHA and the PbS QD coating could be attributed to the high responsivity of the vdW photodiode. Furthermore, the presented NIR photodiode could also be integrated in photoplethysmography (PPG) for real-time heart rate (HR) monitoring. The extracted HR was in good accord with the values measured with the patient monitor-determined by analyzing the Fourier transform of the stable and reliable fingertip PPG waveform-suggesting its potential for practical applications.
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Affiliation(s)
- Mingyuan Xu
- School of Advanced Manufacturing, Nanchang University, Nanchang 330031, China;
| | - Yinghao Cui
- School of Microelectronics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei 230009, China; (Y.C.); (T.Z.); (M.L.)
| | - Tao Zhang
- School of Microelectronics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei 230009, China; (Y.C.); (T.Z.); (M.L.)
| | - Mengxue Lu
- School of Microelectronics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei 230009, China; (Y.C.); (T.Z.); (M.L.)
| | - Yongqiang Yu
- School of Microelectronics, Micro Electromechanical System Research Center of Engineering and Technology of Anhui Province, Hefei University of Technology, Hefei 230009, China; (Y.C.); (T.Z.); (M.L.)
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11
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Tang Q, Zhong F, Li Q, Weng J, Li J, Lu H, Wu H, Liu S, Wang J, Deng K, Xiao Y, Wang Z, He T. Infrared Photodetection from 2D/3D van der Waals Heterostructures. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1169. [PMID: 37049263 PMCID: PMC10096675 DOI: 10.3390/nano13071169] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/02/2023] [Revised: 03/20/2023] [Accepted: 03/21/2023] [Indexed: 06/19/2023]
Abstract
An infrared photodetector is a critical component that detects, identifies, and tracks complex targets in a detection system. Infrared photodetectors based on 3D bulk materials are widely applied in national defense, military, communications, and astronomy fields. The complex application environment requires higher performance and multi-dimensional capability. The emergence of 2D materials has brought new possibilities to develop next-generation infrared detectors. However, the inherent thickness limitations and the immature preparation of 2D materials still lead to low quantum efficiency and slow response speeds. This review summarizes 2D/3D hybrid van der Waals heterojunctions for infrared photodetection. First, the physical properties of 2D and 3D materials related to detection capability, including thickness, band gap, absorption band, quantum efficiency, and carrier mobility, are summarized. Then, the primary research progress of 2D/3D infrared detectors is reviewed from performance improvement (broadband, high-responsivity, fast response) and new functional devices (two-color detectors, polarization detectors). Importantly, combining low-doped 3D and flexible 2D materials can effectively improve the responsivity and detection speed due to a significant depletion region width. Furthermore, combining the anisotropic 2D lattice structure and high absorbance of 3D materials provides a new strategy in high-performance polarization detectors. This paper offers prospects for developing 2D/3D high-performance infrared detection technology.
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Affiliation(s)
- Qianying Tang
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Fang Zhong
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Qing Li
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Jialu Weng
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Junzhe Li
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hangyu Lu
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Haitao Wu
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shuning Liu
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiacheng Wang
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ke Deng
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Yunlong Xiao
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Zhen Wang
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Ting He
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
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12
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Zhang Y, Loh JYY, Kherani NP. Facilely Achieved Self-Biased Black Silicon Heterojunction Photodiode with Broadband Quantum Efficiency Approaching 100. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2203234. [PMID: 36253154 PMCID: PMC9685453 DOI: 10.1002/advs.202203234] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/01/2022] [Revised: 09/21/2022] [Indexed: 06/16/2023]
Abstract
Photodiodes are fundamental components in modern optoelectronics. Heterojunction photodiodes, simply configured by two different contact materials, have been a hot research topic for many years. Currently reported self-biased heterojunction photodiodes routinely have external quantum efficiency (EQE) significantly below 100% due to optical and electrical losses. Herein, an approach that virtually overcomes this 100% EQE challenge via low-aspect-ratio nanostructures and drift-dominated photocarrier transport in a heterojunction photodiode is proposed. Broadband near-ideal EQE is achieved in nanocrystal indium tin oxide/black silicon (nc-ITO/b-Si) Schottky photodiodes. The b-Si comprises nanostalagmites which balance the antireflection effect and surface morphology. The built-in electric field is explored to match the optical generation profile, realizing enhanced photocarrier transport over a broadband of photogeneration. The devices exhibit unprecedented EQE among the reported leading-edge heterojunction photodiodes: average EQE surpasses ≈98% for wavelengths of 570-925 nm, while overall EQE is greater than ≈95% from 500 to 960 nm. Further, only elementary fabrication techniques are explored to achieve these excellent device properties. A heart rate sensor driven by nanowatt faint light is demonstrated, indicating the enormous potential of this near-ideal b-Si photodiode for low power consuming applications.
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Affiliation(s)
- Yibo Zhang
- The Edward S. Rogers Sr. Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
| | - Joel Y. Y. Loh
- The Edward S. Rogers Sr. Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
| | - Nazir P. Kherani
- The Edward S. Rogers Sr. Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
- Department of Materials Science and EngineeringUniversity of Toronto184 College StreetTorontoOntarioM5S 3E4Canada
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13
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Dou W, Yin Z, Zhang Y, Deng H, Dai N. Two-Dimensional Perovskite (PEA) 2PbI 4 Two-Color Blue-Green Photodetector. NANOMATERIALS 2022; 12:nano12152556. [PMID: 35893524 PMCID: PMC9331230 DOI: 10.3390/nano12152556] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/13/2022] [Revised: 07/17/2022] [Accepted: 07/20/2022] [Indexed: 11/29/2022]
Abstract
Perovskite materials have been widely used to fabricate solar cells, laser diodes and other photodevices, owing to the advantage of high absorption coefficient, long carrier life and shallow defect energy levels. However, due to easy hydrolysis, it is difficult to fabricate perovskite micro-nano devices. Herein, we developed a water-free device fabrication technology and fabricated a two-dimensional (C6H5C2H4NH3)2PbI4 ((PEA)2PbI4) two-color blue-green light detector, which exhibits high detection performance under the illumination of two-color lasers (λ = 460 nm, 532 nm). Compared with bulk devices, the dark current of the fabricated devices (10−11 A) was reduced by 2 orders of magnitude. The peak responsivity and detectivity are about 1 A/W and 1011 Jones, respectively. The photodetection performance of the device is basically the same under the two-color lasers. Our results provide a new process to fabricate perovskite microelectronic devices, and the fabricated photodetector shows great application prospects in underwater detection, owing to the blue-green window existing in water.
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Affiliation(s)
- Wei Dou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; (W.D.); (Z.Y.); (Y.Z.)
- University of Chinese Academy of Sciences, Beijing 100049, China
- School of Physical Science and Technology, Shanghai Tech University, Shanghai 201210, China
| | - Ziwei Yin
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; (W.D.); (Z.Y.); (Y.Z.)
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yi Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; (W.D.); (Z.Y.); (Y.Z.)
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Huiyong Deng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; (W.D.); (Z.Y.); (Y.Z.)
- University of Chinese Academy of Sciences, Beijing 100049, China
- Zhejiang Laboratory, Hangzhou 311100, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- Correspondence: (H.D.); (N.D.)
| | - Ning Dai
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; (W.D.); (Z.Y.); (Y.Z.)
- University of Chinese Academy of Sciences, Beijing 100049, China
- Zhejiang Laboratory, Hangzhou 311100, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou 213164, China
- Correspondence: (H.D.); (N.D.)
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14
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Adhikari P, Wang P, Kobbekaduwa K, Xie C, Huai C, Wang Y, Zhang J, Shi Y, Zheng H, Rao AM, Zeng H, Gao J. Generating and Capturing Secondary Hot Carriers in Monolayer Tungsten Dichalcogenides. J Phys Chem Lett 2022; 13:5703-5710. [PMID: 35713478 DOI: 10.1021/acs.jpclett.2c01073] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
It remains challenging to capture and investigate the drift dynamics of primary hot carriers because of their ultrashort lifetime (∼200 fs). Here we report a new mechanism for secondary hot carrier (∼25 ps) generation in monolayer transition metal dichalcogenides such as WS2 and WSe2, triggered by the Auger recombination of trions and biexcitons. Using ultrafast photocurrent spectroscopy, we measured and characterized the photocurrent stemming from the Auger recombination of trions and biexcitons in WS2 and WSe2. A mobility of 0.24 cm2 V-1 s-1 and a drift length of ∼3.8 nm were found for the secondary hot carriers in WS2. By leveraging interactions between exciton complexes, we envision a new mechanism for generating and controlling hot carriers, which could lead to efficient devices in photophysics, photochemistry, and photosynthesis.
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Affiliation(s)
- Pan Adhikari
- Ultrafast Photophysics of Quantum Devices Laboratory, Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634, United States
| | - Peijian Wang
- Department of Physics, University at Buffalo, SUNY, Buffalo, New York 14260, United States
| | - Kanishka Kobbekaduwa
- Ultrafast Photophysics of Quantum Devices Laboratory, Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634, United States
| | - Chendi Xie
- Ultrafast Photophysics of Quantum Devices Laboratory, Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634, United States
| | - Chang Huai
- Department of Physics, University at Buffalo, SUNY, Buffalo, New York 14260, United States
| | - Yinghui Wang
- Femtosecond Laser Laboratory, Key Laboratory of Physics and Technology for Advanced Batteries, College of Physics, Jilin University, Changchun 130012, P. R. China
| | - Jianbing Zhang
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Ying Shi
- Institute of Atomic and Molecular Physics, Jilin Provincial Key Laboratory of Applied Atomic and Molecular Spectroscopy, Jilin University, Changchun 130012, P. R. China
| | - Haimei Zheng
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Apparao M Rao
- Ultrafast Photophysics of Quantum Devices Laboratory, Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634, United States
| | - Hao Zeng
- Department of Physics, University at Buffalo, SUNY, Buffalo, New York 14260, United States
| | - Jianbo Gao
- Ultrafast Photophysics of Quantum Devices Laboratory, Department of Physics and Astronomy, Clemson University, Clemson, South Carolina 29634, United States
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15
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Wu G, Tang L, Deng G, Liu L, Hao Q, Yuan S, Wang J, Wei H, Zhao Y, Yue B, Shi J, Tan Y, Li R, Zhang Y, Yan J, Yi X, Wang J, Kong J, Li J. Transparent dual-band ultraviolet photodetector based on graphene/p-GaN/AlGaN heterojunction. OPTICS EXPRESS 2022; 30:21349-21361. [PMID: 36224856 DOI: 10.1364/oe.460151] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2022] [Accepted: 05/09/2022] [Indexed: 06/16/2023]
Abstract
Versatile applications have driven a desire for dual-band detection that enables seeing objects in multiple wavebands through a single photodetector. In this paper, a concept of using graphene/p-GaN Schottky heterojunction on top of a regular AlGaN-based p-i-n mesa photodiode is reported for achieving solar-/visible-blind dual-band (275 nm and 365 nm) ultraviolet photodetector with high performance. The highly transparent graphene in the front side and the polished sapphire substrate at the back side allows both top illumination and back illumination for the dual band detection. A system limit dark current of 1×10-9 A/cm2 at a negative bias voltage up to -10 V has been achieved, while the maximum detectivity obtained from the detection wavebands of interests at 275 nm and 365 nm are ∼ 9.0 ×1012 cm·Hz1/2/W at -7.5 V and ∼8.0 × 1011 cm·Hz1/2/W at +10 V, respectively. Interestingly, this new type of photodetector is dual-functional, capable of working as either photodiode or photoconductor, when switched by simply adjusting the regimes of bias voltage applied on the devices. By selecting proper bias, the device operation mode would switch between a high-speed photodiode and a high-gain photoconductor. The device exhibits a minimum rise time of ∼210 µs when working as a photodiode and a maximum responsivity of 300 A/W at 6 μW/cm2 when working as a photoconductor. This dual band and multi-functional design would greatly extend the utility of detectors based on nitrides.
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16
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The Graphene Structure’s Effects on the Current-Voltage and Photovoltaic Characteristics of Directly Synthesized Graphene/n-Si(100) Diodes. NANOMATERIALS 2022; 12:nano12101640. [PMID: 35630863 PMCID: PMC9147930 DOI: 10.3390/nano12101640] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/22/2022] [Revised: 05/04/2022] [Accepted: 05/06/2022] [Indexed: 12/04/2022]
Abstract
Graphene was synthesized directly on Si(100) substrates by microwave plasma-enhanced chemical vapor deposition (MW-PECVD). The effects of the graphene structure on the electrical and photovoltaic properties of graphene/n-Si(100) were studied. The samples were investigated using Raman spectroscopy, atomic force microscopy, and by measuring current–voltage (I-V) graphs. The temperature of the hydrogen plasma annealing prior to graphene synthesis was an essential parameter regarding the graphene/Si contact I-V characteristics and photovoltaic parameters. Graphene n-type self-doping was found to occur due to the native SiO2 interlayer at the graphene/Si junction. It was the prevalent cause of the significant decrease in the reverse current and short-circuit current. No photovoltaic effect dependence on the graphene roughness and work function could be observed.
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17
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Xu X, Guo T, Kim H, Hota MK, Alsaadi RS, Lanza M, Zhang X, Alshareef HN. Growth of 2D Materials at the Wafer Scale. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108258. [PMID: 34860446 DOI: 10.1002/adma.202108258] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Revised: 11/29/2021] [Indexed: 06/13/2023]
Abstract
Wafer-scale growth has become a critical bottleneck for scaling up applications of van der Waal (vdW) layered 2D materials in high-end electronics and optoelectronics. Most vdW 2D materials are initially obtained through top-down synthesis methods, such as exfoliation, which can only prepare small flakes on a micrometer scale. Bottom-up growth can enable 2D flake growth over a large area. However, seamless merging of these flakes to form large-area continuous films with well-controlled layer thickness and lattice orientation is still a significant challenge. This review briefly introduces several vdW layered 2D materials covering their lattice structures, representative physical properties, and potential roles in large-scale applications. Then, several methods used to grow vdW layered 2D materials at the wafer scale are reviewed in depth. In particular, three strategies are summarized that enable 2D film growth with a single-crystalline structure over the whole wafer: growth of an isolated domain, growth of unidirectional domains, and conversion of oriented precursors. After that, the progress in using wafer-scale 2D materials in integrated devices and advanced epitaxy is reviewed. Finally, future directions in the growth and scaling of vdW layered 2D materials are discussed.
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Affiliation(s)
- Xiangming Xu
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Tianchao Guo
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Hyunho Kim
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Mrinal K Hota
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Rajeh S Alsaadi
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Mario Lanza
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Xixiang Zhang
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Husam N Alshareef
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
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18
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The Light Absorption Enhancement in Graphene Monolayer Resulting from the Diffraction Coupling of Surface Plasmon Polariton Resonance. NANOMATERIALS 2022; 12:nano12020216. [PMID: 35055234 PMCID: PMC8777638 DOI: 10.3390/nano12020216] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/07/2021] [Revised: 12/22/2021] [Accepted: 01/04/2022] [Indexed: 12/12/2022]
Abstract
In this study, we investigate a physical mechanism to improve the light absorption efficiency of graphene monolayer from the universal value of 2.3% to about 30% in the visible and near-infrared wavelength range. The physical mechanism is based on the diffraction coupling of surface plasmon polariton resonances in the periodic array of metal nanoparticles. Through the physical mechanism, the electric fields on the surface of graphene monolayer are considerably enhanced. Therefore, the light absorption efficiency of graphene monolayer is greatly improved. To further confirm the physical mechanism, we use an interaction model of double oscillators to explain the positions of the absorption peaks for different array periods. Furthermore, we discuss in detail the emerging conditions of the diffraction coupling of surface plasmon polariton resonances. The results will be beneficial for the design of graphene-based photoelectric devices.
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19
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Ji P, Yang S, Wang Y, Li K, Wang Y, Suo H, Woldu YT, Wang X, Wang F, Zhang L, Jiang Z. High-performance photodetector based on an interface engineering-assisted graphene/silicon Schottky junction. MICROSYSTEMS & NANOENGINEERING 2022; 8:9. [PMID: 35070351 PMCID: PMC8741776 DOI: 10.1038/s41378-021-00332-4] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/15/2021] [Revised: 11/07/2021] [Accepted: 11/16/2021] [Indexed: 05/12/2023]
Abstract
Graphene/silicon Schottky junctions have been proven efficient for photodetection, but the existing high dark current seriously restricts applications such as weak signal detection. In this paper, a thin layer of gadolinium iron garnet (Gd3Fe5O12, GdIG) film is introduced to engineer the interface of a graphene/silicon Schottky photodetector. The novel structure shows a significant decrease in dark current by 54 times at a -2 V bias. It also exhibits high performance in a self-powered mode in terms of an Ilight/Idark ratio up to 8.2 × 106 and a specific detectivity of 1.35 × 1013 Jones at 633 nm, showing appealing potential for weak-light detection. Practical suitability characterizations reveal a broadband absorption covering ultraviolet to near-infrared light and a large linear response with a wide range of light intensities. The device holds an operation speed of 0.15 ms, a stable response for 500 continuous working cycles, and long-term environmental stability after several months. Theoretical analysis shows that the interlayer increases the barrier height and passivates the contact surface so that the dark current is suppressed. This work demonstrates the good capacity of GdIG thin films as interlayer materials and provides a new solution for high-performance photodetectors.
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Affiliation(s)
- Peirui Ji
- State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Shuming Yang
- State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Yu Wang
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Kaili Li
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Yiming Wang
- State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Hao Suo
- State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Yonas Tesfaye Woldu
- State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Xiaomin Wang
- State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Fei Wang
- State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Liangliang Zhang
- State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, 710049 China
| | - Zhuangde Jiang
- State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an, 710049 China
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20
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Effect of Electrolytic Medium on the Electrochemical Reduction of Graphene Oxide on Si(111) as Probed by XPS. NANOMATERIALS 2021; 12:nano12010043. [PMID: 35009993 PMCID: PMC8747037 DOI: 10.3390/nano12010043] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Revised: 12/20/2021] [Accepted: 12/21/2021] [Indexed: 01/15/2023]
Abstract
The wafer-scale integration of graphene is of great importance in view of its numerous applications proposed or underway. A good graphene–silicon interface requires the fine control of several parameters and may turn into a high-cost material, suitable for the most advanced applications. Procedures that can be of great use for a wide range of applications are already available, but others are to be found, in order to modulate the offer of different types of materials, at different levels of sophistication and use. We have been exploring different electrochemical approaches over the last 5 years, starting from graphene oxide and resulting in graphene deposited on silicon-oriented surfaces, with the aim of understanding the reactions leading to the re-establishment of the graphene network. Here, we report how a proper choice of both the chemical environment and electrochemical conditions can lead to a more controlled and tunable graphene–Si(111) interface. This can also lead to a deeper understanding of the electrochemical reactions involved in the evolution of graphene oxide to graphene under electrochemical reduction. Results from XPS, the most suitable tool to follow the presence and fate of functional groups at the graphene surface, are reported, together with electrochemical and Raman findings.
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Kang J, Hong M, Tian Z. Special issue on the 100 th anniversary of Xiamen University. LIGHT, SCIENCE & APPLICATIONS 2021; 10:185. [PMID: 34521816 PMCID: PMC8440623 DOI: 10.1038/s41377-021-00613-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2021] [Accepted: 08/08/2021] [Indexed: 06/13/2023]
Affiliation(s)
- Junyong Kang
- Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Key Laboratory of Semiconductor Materials and Applications, CI center for OSED, College of Physical Science and Technology, 361005, Xiamen, China.
| | - Minghui Hong
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117576, Singapore, Singapore
| | - Zhongqun Tian
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials, College of Chemistry and Chemical Engineering, Xiamen University, 361005, Xiamen, China
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