Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO2/Si(100) for Monolithic Optoelectronic Integration

The realization of high quality (0001) GaN on Si(100) is paramount importance for the monolithic integration of Si-based integrated circuits and GaN-enabled optoelectronic devices. Nevertheless, thorny issues including large thermal mismatch and distinct crystal symmetries typically bring about uncontrollable polycrystalline GaN formation with considerable surface roughness on standard Si(100). Here a breakthrough of high-quality single-crystalline GaN film on polycrystalline SiO2/Si(100) is presented by quasi van der Waals epitaxy and fabricate the monolithically integrated photonic chips. The in-plane orientation of epilayer is aligned throughout a slip and rotation of high density AlN nuclei due to weak interfacial forces, while the out-of-plane orientation of GaN can be guided by multi-step growth on transfer-free graphene. For the first time, the monolithic integration of light-emitting diode (LED) and photodetector (PD) devices are accomplished on CMOS-compatible SiO2/Si(100). Remarkably, the self-powered PD affords a rapid response below 250 µs under adjacent LED radiation, demonstrating the responsivity and detectivity of 2.01 × 105 A/W and 4.64 × 1013 Jones, respectively. This work breaks a bottleneck of synthesizing large area single-crystal GaN on Si(100), which is anticipated to motivate the disruptive developments in Si-integrated optoelectronic devices.

Single-Mode Laser in the Telecom Range by Deterministic Amplification of the Topological Interface Mode

Photonic integrated circuits are paving the way for novel on-chip functionalities with diverse applications in communication, computing, and beyond. The integration of on-chip light sources, especially single-mode lasers, is crucial for advancing those photonic chips to their full potential. Recently, novel concepts involving topological designs introduced a variety of options for tuning device properties, such as the desired single-mode emission. Here, we introduce a novel cavity design that allows amplification of the topological interface mode by deterministic placement of gain material within a topological lattice. The proposed design is experimentally implemented by a selective epitaxy process to achieve closely spaced Si and InGaAs nanorods embedded within the same layer. This results in the first demonstration of a single-mode laser in the telecom band using the concept of amplified topological modes without introducing artificial losses.

Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga2O3/NiO Semiconductors

Recent advancements in power electronics have been driven by Ga2O3-based ultrawide bandgap (UWBG) semiconductor devices, enabling efficient high-current switching. However, integrating Ga2O3 power devices with essential silicon CMOS logic circuits for advanced control poses fabrication challenges. Researchers have introduced Ga2O3-based NMOS and pseudo-CMOS circuits for integration, but these circuits may either consume more power or increase the design complexity. Hence, this article proposes Ga2O3-based CMOS realized using heterogeneous 3D-stacked bilayer ambipolar transistors. These ambipolar transistors consist of HfO2/NiO/Ga2O3/NiO/HfO2 heterostructures that are wrapped around by the Ti/Au gate electrode, resulting in record high electron and hole current on/off ratios of 109 and 107. The threshold voltage, subthreshold swing, and current density measured from 100 ambipolar devices (across 5 batches) are around -7.99 ± 0.92 V (p-channel) and 7.81 ± 0.81 V (n-channel), 0.59 ± 0.07 V/dec (p-channel) and 0.61 ± 0.06 V/dec (n-channel), and 0.99 ± 0.26 mA/mm (p-channel) and 58.23 ± 12.99 mA/mm (n-channel), respectively. All the 100 ambipolar devices showed decent long-term stability over a period of 200 days, exhibiting reliable electrical performance. The threshold voltage shift (ΔVTH) after negative bias stressing for a period of 3500 s is around 11.52 V (p-channel) and 10.21 V (n-channel), respectively. Notably, the n-channels exhibit ∼2 orders higher on/off ratio than the best Ga2O3 unipolar transistors at 300 °C. Moreover, the polarities of ambipolar transistors are reconfigurable into p- or n-MOS, which are integrated to demonstrate CMOS inverter, NOR, and NAND logic gates. The switching periods from "0" to "1" and from "1" to "0" of NOR are 0.12 and 0.17 μs, and those of NAND are 0.16 and 0.13 μs. This work lays the foundation of oxide-semiconductor-based CMOS for future integrated electronics.

Electrochemically Exfoliated Graphene Additive-Free Inks for 3D Printing Customizable Monolithic Integrated Micro-Supercapacitors on a Large Scale

Three-dimensional (3D) printing technology with enhanced fidelity can achieve multiple functionalities and boost electrochemical performance of customizable planar micro-supercapacitors (MSCs), however, precise structural control of additive-free graphene-based macro-assembly electrode for monolithic integrated MSCs (MIMSCs) remains challenging. Here, the large-scale 3D printing fabrication of customizable planar MIMSCs is reported utilizing additive-free, high-quality electrochemically exfoliated graphene inks, which is not required the conventional cryogenic assistance during the printing process and any post-processing reduction. The resulting MSCs reveal an extremely small engineering footprint of 0.025 cm2 , exceptionally high areal capacitance of 4900 mF cm-2 , volumetric capacitance of 195.6 F cm-3 , areal energy density of 2.1 mWh cm-2 , and unprecedented volumetric energy density of 23 mWh cm-3 for a single cell, surpassing most previously reported 3D printed MSCs. The 3D printed MIMSC pack is further demonstrated, with the maximum areal cell count density of 16 cell cm-2 , the highest output voltage of 192.5 V and the largest output voltage per unit area of 56 V cm-2 up to date are achieved. This work presents an innovative solution for processing high-performance additive-free graphene ink and realizing the large-scale production of 3D printed MIMSCs for planar energy storage.

A High-Voltage-Isolated MEMS Quad-Solenoid Transformer with Specific Insulation Barriers for Miniaturized Galvanically Isolated Power Applications

The paper reports on high voltage (HV)-isolated MEMS quad-solenoid transformers for compact isolated gate drivers and bias power supplies. The component is wafer-level fabricated via a novel MEMS micro-casting technique, where the tightly coupled quad-solenoid chip consists of monolithically integrated 3D inductive coils and an inserted ferrite magnetic core for high-efficiency isolated power transmission through electromagnetic coupling. The proposed HV-isolated transformer demonstrates a high inductance value of 743.2 nH, along with a small DC resistance of only 0.39 Ω in a compact footprint of 6 mm2, making it achieve a very high inductance integration density (123.9 nH/mm2) and the ratio of L/R (1906 nH/Ω). More importantly, with embedded ultra-thick serpentine-shaped (S-shaped) SiO2 isolation barriers that completely separate the primary and secondary windings, an over 2 kV breakdown voltage is obtained. In addition, the HV-isolated transformer chips exhibit a superior power transfer efficiency of over 80% and ultra-high dual-phase saturation current of 1.4 A, thereby covering most practical cases in isolated, integrated bias power supplies such as high-efficiency high-voltage-isolated gate driver solutions.

Metal Microelectromechanical Resonator Exhibiting Fast Human Activity Detection

This work presents a MEMS resonator used as an ultra-high resolution water vapor sensor (humidity sensing) to detect human activity through finger movement as a demonstrator example. This microelectromechanical resonator is designed as a clamped-clamped beam fabricated using the top metal layer of a commercial CMOS technology (0.35 μm CMOS-AMS) and monolithically integrated with conditioning and readout circuitry. Sensing is performed through the resonance frequency change due to the addition of water onto the clamped-clamped beam coming from the moisture created by the evaporation of water in the human body. The sensitivity and high-speed response to the addition of water onto the metal bridge, as well as the quick dewetting of the surface, make it suitable for low-power human activity sensing.

Vertically Integrated CMOS Ternary Logic Device with Low Static Power Consumption and High Packing Density

A ternary logic system to realize the simplest multivalued logic architecture can enhance energy efficiency compared to a binary logic system by reducing the number of transistors and interconnections. For the ternary logic system, a ternary logic device to harness three stable states is needed. In this study, a vertically integrated complementary metal-oxide-semiconductor ternary logic device is demonstrated by monolithically integrating a thin-film transistor (TFT) over a transistor-based threshold switch (TTS). Because the TFT and the TTS have their own source (S), drain (D), and gate (G), there are physically six electrodes. But the hybrid ternary logic device of the TFT over the TTS has only four electrodes: S, D, GTFT, and GTTS like a single MOSFET. It is because the D of the underlying TTS is electrically tied with the S of the superjacent TFT. By combining an on- and off-state of the TFT and the TTS, ternary logic values of low current ("0"-state), middle current ("1"-state), and high current ("2"-state) are realized. Particularly, static power consumption at the "1"-state is decreased by employing the TTS with low off-state leakage current compared to previously reported other ternary logic devices. In addition, a footprint of the ternary logic device with the vertically overlaying structure that has a framework of "one over the other" can be lowered by roughly twice compared to that with the laterally deployed structure that has an organization of "one alongside the other".

Ultrabroadband Imaging Based on Wafer-Scale Tellurene

High-resolution imaging is at the heart of the revolutionary breakthroughs of intelligent technologies, and it is established as an important approach toward high-sensitivity information extraction/storage. However, due to the incompatibility between non-silicon optoelectronic materials and traditional integrated circuits as well as the lack of competent photosensitive semiconductors in the infrared region, the development of ultrabroadband imaging is severely impeded. Herein, the monolithic integration of wafer-scale tellurene photoelectric functional units by exploiting room-temperature pulsed-laser deposition is realized. Taking advantage of the surface plasmon polaritons of tellurene, which results in the thermal perturbation promoted exciton separation, in situ formation of out-of-plane homojunction and negative expansion promoted carrier transport, as well as the band bending promoted electron-hole pair separation enabled by the unique interconnected nanostrip morphology, the tellurene photodetectors demonstrate wide-spectrum photoresponse from 370.6 to 2240 nm and unprecedented photosensitivity with the optimized responsivity, external quantum efficiency and detectivity of 2.7 × 10⁷  A W^-1 , 8.2 × 10⁹ % and 4.5 × 10¹⁵  Jones. An ultrabroadband imager is demonstrated and high-resolution photoelectric imaging is realized. The proof-of-concept wafer-scale tellurene-based ultrabroadband photoelectric imaging system depicts a fascinating paradigm for the development of an advanced 2D imaging platform toward next-generation intelligent equipment.

Study on the Effects of Quantum Well Location on Optical Characteristics of AlGaN/GaN Light-Emitting HEMT

In this study, AlGaN/GaN light-emitting HEMTs (LE-HEMT) with a single quantum well inserted in different locations in the epitaxy layers are fabricated and analyzed. For both structures, light-emitting originated from electrons in the 2DEG and holes from the p-GaN for radiative recombination is located in the quantum well. To investigate the importance of the location of single quantum well, optical characteristics are compared by simulation and experimental results. The experimental results show that the main light-emitting wavelength is shifted from 365 nm in the UV range to 525 nm in the visible range when the radiative recombination is confined in the quantum well and dominates among other mechanisms. Epi B, which has a quantum well above the AlGaN barrier layer in contrast to Epi A which has a quantum well underneath the barrier, shows better intensity and uniformity in light-emitting. According to the simulation results showing the radiative distribution and electron concentrations for both structures, the lower quantum efficiency is due to the diverse current paths in Epi A. On the other hand, Epi B shows better quantum confinement and therefore better luminescence in the same bias condition, which is consistent with experimental observations. These findings are critical for advancing the performance of LE-HEMTs.

A Versatile, Incubator-Compatible, Monolithic GaN Photonic Chipscope for Label-Free Monitoring of Live Cell Activities

The ability to quantitatively monitor various cellular activities is critical for understanding their biological functions and the therapeutic response of cells to drugs. Unfortunately, existing approaches such as fluorescent staining and impedance-based methods are often hindered by their multiple time-consuming preparation steps, sophisticated labeling procedures, and complicated apparatus. The cost-effective, monolithic gallium nitride (GaN) photonic chip has been demonstrated as an ultrasensitive and ultracompact optical refractometer in a previous work, but it has never been applied to cell studies. Here, for the first time, the so-called GaN chipscope is proposed to quantitatively monitor the progression of different intracellular processes in a label-free manner. Specifically, the GaN-based monolithic chip enables not only a photoelectric readout of cellular/subcellular refractive index changes but also the direct imaging of cellular/subcellular ultrastructural features using a customized differential interference contrast (DIC) microscope. The miniaturized chipscope adopts an ultracompact design, which can be readily mounted with conventional cell culture dishes and placed inside standard cell incubators for real-time observation of cell activities. As a proof-of-concept demonstration, its applications are explored in 1) cell adhesion dynamics monitoring, 2) drug screening, and 3) cell differentiation studies, highlighting its potential in broad fundamental cell biology studies as well as in clinical applications.

Optical Rashba Effect in a Light-Emitting Perovskite Metasurface

The Rashba effect, i.e., the splitting of electronic spin-polarized bands in the momentum space of a crystal with broken inversion symmetry, has enabled the realization of spin-orbitronic devices, in which spins are manipulated by spin-orbit coupling. In optics, where the helicity of light polarization represents the spin degree of freedom for spin-momentum coupling, the optical Rashba effect is manifested by the splitting of optical states with opposite chirality in the momentum space. Previous realizations of the optical Rashba effect relied on passive devices determining the surface plasmon or light propagation inside nanostructures, or the directional emission of chiral luminescence when hybridized with light-emitting media. An active device underpinned by the optical Rashba effect is demonstrated here, in which a monolithic halide perovskite metasurface emits highly directional chiral photoluminescence. An all-dielectric metasurface design with broken in-plane inversion symmetry is directly embossed into the high-refractive-index, light-emitting perovskite film, yielding a degree of circular polarization of photoluminescence of 60% at room temperature.

Poly(1,5-diaminonaphthalene)-Grafted Monolithic 3D Hierarchical Carbon as Highly Capacitive and Stable Supercapacitor Electrodes

A holistic approach to fabricate a hierarchical electrode that consists of redox-active poly(1,5-diaminonaphthalene), 1,5 PDAN, uniformly and conformally grafted onto a 3D carbon nanotube (CNT-a-CC) electrode is set forth. The CNT-a-CC electrode was formed by direct growth of high-density CNTs on the surface of every individual microfiber, the constituent of activated carbon cloth (a-CC). Owing to the naphthalene backbone, conformal deposition of 1,5 PDAN on carbon surfaces has been readily attained via electropolymerization. This hierarchical platform with open and continuous nanochannels formed by CNTs coupled with excellent electrical connectivity between CNTs and the polymer provides a reproducible platform for electrochemical investigation. According to multiple sample analyses on CNT-a-CC, the gravimetric capacitance of 1,5 PDAN is up to 1250 F/g, and this value can be maintained up to 100 mV/s. Hierarchical organization provides a specific capacitance of 650 F/g at 2 mV/s at a 1,5 PDAN loading of 2.5 mg/cm². The conjugated ladder structure of the polymer led to strong π-π interactions between the polymer and CNT-a-CC together with mechanically robust CNT-a-CC. A capacitance retention of 94% for 1,5 PDAN has been obtained after 25,000 cycles at 100 mV/s, a significant cycle stability improvement over conventional conductive polymers such as polyaniline. This new lightweight electrode that seamlessly integrates functional species with nanochannel-like CNT-a-CC opens up a new opportunity to harness electrochemical reactions in the 3D carbon electrode for energy storage and electrocatalysis as well as electrochemical sensing.

E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology

AlGaN/GaN E/D-mode GaN inverters are successfully fabricated on a 150-mm Si wafer. P-GaN gate technology is applied to be compatible with the commercial E-mode GaN power device technology platform and a systematic study of E/D-mode GaN inverters has been conducted with detail. The key electrical characters have been analyzed from room temperature (RT) to 200 °C. Small variations of the inverters are observed at different temperatures. The logic swing voltage of 2.91 V and 2.89 V are observed at RT and 200 °C at a supply voltage of 3 V. Correspondingly, low/high input noise margins of 0.78 V/1.67 V and 0.68 V/1.72 V are observed at RT and 200 °C. The inverters also demonstrate small rising edge time of the output signal. The results show great potential for GaN smart power integrated circuit (IC) application.

Near-field Terahertz Sensing of HeLa Cells and Pseudomonas Based on Monolithic Integrated Metamaterials with a Spintronic Terahertz Emitter

Label-free biosensors operating within the terahertz (THz) spectra have helped to unlock a myriad of potential THz applications, ranging from biomaterial detection to point-of-care diagnostics. However, the THz wave diffraction limit and the lack of emitter-integrated THz biosensors hinder the proliferation of high-resolution near-field label-free THz biosensing. Here, a monolithic THz emission biosensor (TEB) is achieved for the first time by integrating asymmetric double-split ring resonator metamaterials with a ferromagnetic heterojunction spintronic THz emitter. This device exhibits an electromagnetically induced transparency window with a resonance frequency of 1.02 THz and a spintronic THz radiation source with a bandwidth of 900 GHz, which are integrated on a fused silica substrate monolithically for the first time. It was observed that the resonance frequency experienced a red-shift behavior with increasing concentration of HeLa cells and Pseudomonas because of the strong interaction between the spintronic THz radiation and the biological samples on the metamaterials. The spatial frequency red-shift resolution is ∼0.01 THz with a Pseudomonas concentration increase from ∼0.5 × 10⁴ to ∼1 × 10⁴/mL. The monolithic THz biosensor is also sensitive to the sample concentration distribution with a 15.68 sensitivity under a spatial resolution of 500 μm, which is determined by the infrared pump light diffraction limit. This TEB shows great potential for high-resolution near-field biosensing applications of trace biological samples.

Nanoscale-Dewetting-Based Direct Interconnection of Microelectronics for a Deterministic Assembly of Transfer Printing

As electronics dramatically advance, their components should be fabricated for miniaturized scale, and integrated on limited-size substrates with extremely high density. Current technologies for the integration and interconnection of electronics show some critical limitations in the application of microscale electronics. To address these problems, herein, a new direct and vertical interconnection driven by selective dewetting of a polymer adhesive is introduced. The interconnection system consists of the polymer adhesive and nanosized metal particles, or structured electrodes. Nanoscale-dewetting windows formed by controlling the stability and wetting property of the adhesive polymer are controlled by the interfacial property of the coated polymer adhesive. The adhesive is coated on substrate by a simple spin-coating process, and its ultraviolet curable property allows only the device-mounted parts to be selectively conductive and sticky, while the other parts form insulation and protection layers. The interconnection of the electronics and substrate by adhesive makes it possible to apply the technique to various microsize electronics with electrode size and pitch of 20 µm or less, and endure dramatic temperature change and a long-term high humidity environment. Moreover, over display comprising over 10 000 microscale light-emitting diodes (micro-LEDs), and commercialized microchips are demonstrated with monolithic integration on flexible and transparent substrate.

Monolithic Solder-On Nanoporous Si-Cu Contacts for Stretchable Silicone Composite Sensors

We report a method of creating solderable, mechanically robust, electrical contacts to interface (soft) silicone-based strain sensors with conventional (hard) solid-state electronics using a nanoporous Si-Cu composite. The Si-based solder-on electrical contact consists of a copper-plated nanoporous Si top surface formed through metal-assisted chemical etching and electroplating and a smooth Si bottom surface that can be covalently bonded onto silicone-based strain sensors through plasma bonding. We investigated the mechanical and electrical properties of the contacts proposed under relevant ranges of mechanical stress for applications in physiological monitoring and rehabilitation. We also produced a series of proof-of-concept devices, including a wearable respiration monitor, leg band for exercise monitoring, and squeeze ball for monitoring rehabilitation of patients with hand injuries or neurological disorders to demonstrate the mechanical robustness and versatility of the technology developed in real-world applications.

Molecular Beam Epitaxy Scalable Growth of Wafer-Scale Continuous Semiconducting Monolayer MoTe2 on Inert Amorphous Dielectrics

Monolayer MoTe₂ , with the narrowest direct bandgap of ≈1.1 eV among Mo- and W-based transition metal dichalcogenides, has attracted increasing attention as a promising candidate for applications in novel near-infrared electronics and optoelectronics. Realizing 2D lateral growth is an essential prerequisite for uniform thickness and property control over the large scale, while it is not successful yet. Here, layer-by-layer growth of 2 in. wafer-scale continuous monolayer 2H-MoTe₂ films on inert SiO₂ dielectrics by molecular beam epitaxy is reported. A single-step Mo-flux controlled nucleation and growth process is developed to suppress island growth. Atomically flat 2H-MoTe₂ with 100% monolayer coverage is successfully grown on inert 2 in. SiO₂ /Si wafer, which exhibits highly uniform in-plane structural continuity and excellent phonon-limited carrier transport behavior. The dynamics-controlled growth recipe is also extended to fabricate continuous monolayer 2H-MoTe₂ on atomic-layer-deposited Al₂ O₃ dielectric. With the breakthrough in growth of wafer-scale continuous 2H-MoTe₂ monolayers on device compatible dielectrics, batch fabrication of high-mobility monolayer 2H-MoTe₂ field-effect transistors and the three-level integration of vertically stacked monolayer 2H-MoTe₂ transistor arrays for 3D circuitry are successfully demonstrated. This work provides novel insights into the scalable synthesis of monolayer 2H-MoTe₂ films on universal substrates and paves the way for the ultimate miniaturization of electronics.

Optimization of a Piezoelectric Energy Harvester and Design of a Charge Pump Converter for CMOS-MEMS Monolithic Integration

The increasing interest in the Internet of Things (IoT) has led to the rapid development of low-power sensors and wireless networks. However, there are still several barriers that make a global deployment of the IoT difficult. One of these issues is the energy dependence, normally limited by the capacitance of the batteries. A promising solution to provide energy autonomy to the IoT nodes is to harvest residual energy from ambient sources, such as motion, vibrations, light, or heat. Mechanical energy can be converted into electrical energy by using piezoelectric transducers. The piezoelectric generators provide an alternating electrical signal that must be rectified and, therefore, needs a power management circuit to adapt the output to the operating voltage of the IoT devices. The bonding and packaging of the different components constitute a large part of the cost of the manufacturing process of microelectromechanical systems (MEMS) and integrated circuits. This could be reduced by using a monolithic integration of the generator together with the circuitry in a single chip. In this work, we report the optimization, fabrication, and characterization of a vibration-driven piezoelectric MEMS energy harvester, and the design and simulation of a charge-pump converter based on a standard complementary metal–oxide–semiconductor (CMOS) technology. Finally, we propose combining MEMS and CMOS technologies to obtain a fully integrated system that includes the piezoelectric generator device and the charge-pump converter circuit without the need of external components. This solution opens new doors to the development of low-cost autonomous smart dust devices.

Design, Fabrication, and Testing of a Monolithically Integrated Tri-Axis High-Shock Accelerometer in Single (111)-Silicon Wafer

In this paper, a monolithic tri-axis piezoresistive high-shock accelerometer has been proposed that has been single-sided fabricated in a single (111)-silicon wafer. A single-cantilever structure and two dual-cantilever structures are designed and micromachined in one (111)-silicon chip to detect Z-axis and X-/Y-axis high-shock accelerations, respectively. Unlike the previous tri-axis sensors where the X-/Y-axis structure was different from the Z-axis one, the herein used similar cantilever sensing structures for tri-axis sensing facilitates design of uniform performance among the three elements for different sensing axes and simplifies micro-fabrication for the multi-axis sensing structure. Attributed to the tri-axis sensors formed by using the single-wafer single-sided fabrication process, the sensor is mechanically robust enough to endure the harsh high-g shocking environment and can be compatibly batch-fabricated in standard semiconductor foundries. After the single-sided process to form the sensor, the untouched chip backside facilitates simple and reliable die-bond packaging. The high-shock testing results of the fabricated sensor show linear sensing outputs along X-/Y-axis and Z-axis, with the sensitivities (under DC 5 V supply) as about 0.80⁻0.88 μV/g and 1.36 μV/g, respectively. Being advantageous in single-chip compact integration of the tri-axis accelerometers, the proposed monolithic tri-axis sensors are promising to be embedded into detection micro-systems for high-shock measurement applications.

Monolithic Integrated Device of GaN Micro-LED with Graphene Transparent Electrode and Graphene Active-Matrix Driving Transistor

Micro-light-emitting diodes (micro-LEDs) are the key to next-generation display technology. However, since the driving circuits are typically composed of Si devices, numerous micro-LED pixels must be transferred from their GaN substrate to bond with the Si field-effect transistors (FETs). This process is called massive transfer, which is arguably the largest obstacle preventing the commercialization of micro-LEDs. We combined GaN devices with emerging graphene transistors and for the first-time designed, fabricated, and measured a monolithic integrated device composed of a GaN micro-LED and a graphene FET connected in series. The p-electrode of the micro-LED was connected to the source of the driving transistor. The FET was used to tune the work current in the micro-LED. Meanwhile, the transparent electrode of the micro-LED was also made of graphene. The operation of the device was demonstrated in room temperature conditions. This research opens the gateway to a new field where other two-dimensional (2D) materials can be used as FET channel materials to further improve transfer properties. The 2D materials can in principle be grown directly onto GaN, which is reproducible and scalable. Also, considering the outstanding properties and versatility of 2D materials, it is possible to envision fully transparent micro-LED displays with transfer-free active matrices (AM), alongside an efficient thermal management solution.

Solid-State Microfluidics with Integrated Thin-Film Acoustic Sensors

For point-of-care applications, integrating sensors into a microfluidic chip is a nontrivial task because conventional detection modules are bulky and microfluidic chips are small in size and their fabrication processes are not compatible. In this work, a solid-state microfluidic chip with on-chip acoustic sensors using standard thin-film technologies is introduced. The integrated chip is essentially a stack of thin films on silicon substrate, featuring compact size, electrical input (fluid control), and electrical output (sensor read-out). These features all contribute to portability. In addition, by virtue of processing discrete microdroplets, the chip provides a solution to the performance degradation bottleneck of acoustic sensors in liquid-phase sensing. Label-free immunoassays in serum are carried out, and the viability of the chip is further demonstrated by result comparison with commercial ELISA in prostate-specific antigen sensing experiments. The solid-state chip is believed to fit specific applications in personalized diagnostics and other relevant clinical settings where instrument portability matters.

Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors

A monolithically-integrated two-dimensional (2D) magnetic field sensor consisting of two difference structures (DSІ and DSII) is proposed in this paper. The DSІ and DSII are composed of four silicon magnetic sensitive transistors (SMST1, SMST2, SMST3 and SMST4) and four collector load resistors (R_L1, R_L2, R_L3 and R_L4). Based on the magnetic sensitive principle of SMST, the integrated difference structure can detect magnetic fields’ component (B_x and B_y) along the x-axis and y-axis, respectively. By adopting micro-electromechanical systems (MEMS) and packaging technology, the chips were fabricated on a p-type <100> orientation silicon wafer with high resistivity and were packaged on printed circuit boards (PCBs). At room temperature, when the V_CE = 5.0 V and I_B = 8.0 mA, the magnetic sensitivities (S_xx and S_yy) along the x-axis and the y-axis were 223 mV/T and 218 mV/T, respectively. The results show that the proposed sensor can not only detect the 2D magnetic field vector (B) in the xy plane, but also that S_xx and S_yy exhibit good uniformity.

Thin-Film Quantum Dot Photodiode for Monolithic Infrared Image Sensors

Imaging in the infrared wavelength range has been fundamental in scientific, military and surveillance applications. Currently, it is a crucial enabler of new industries such as autonomous mobility (for obstacle detection), augmented reality (for eye tracking) and biometrics. Ubiquitous deployment of infrared cameras (on a scale similar to visible cameras) is however prevented by high manufacturing cost and low resolution related to the need of using image sensors based on flip-chip hybridization. One way to enable monolithic integration is by replacing expensive, small-scale III–V-based detector chips with narrow bandgap thin-films compatible with 8- and 12-inch full-wafer processing. This work describes a CMOS-compatible pixel stack based on lead sulfide quantum dots (PbS QD) with tunable absorption peak. Photodiode with a 150-nm thick absorber in an inverted architecture shows dark current of 10⁻⁶ A/cm² at −2 V reverse bias and EQE above 20% at 1440 nm wavelength. Optical modeling for top illumination architecture can improve the contact transparency to 70%. Additional cooling (193 K) can improve the sensitivity to 60 dB. This stack can be integrated on a CMOS ROIC, enabling order-of-magnitude cost reduction for infrared sensors.

Telecom-Wavelength Bottom-up Nanobeam Lasers on Silicon-on-Insulator

Semiconductor nanowire lasers are considered promising ultracompact and energy-efficient light sources in the field of nanophotonics. Although the integration of nanowire lasers onto silicon photonic platforms is an innovative path toward chip-scale optical communications and photonic integrated circuits, operating nanowire lasers at telecom-wavelengths remains challenging. Here, we report on InGaAs nanowire array lasers on a silicon-on-insulator platform operating up to 1440 nm at room temperature. Bottom-up photonic crystal nanobeam cavities are formed by growing nanowires as ordered arrays using selective-area epitaxy, and single-mode lasing by optical pumping is demonstrated. We also show that arrays of nanobeam lasers with individually tunable wavelengths can be integrated on a single chip by the simple adjustment of the lithographically defined growth pattern. These results exemplify a practical approach toward nanowire lasers for silicon photonics.

Monolithic InGaAs Nanowire Array Lasers on Silicon-on-Insulator Operating at Room Temperature

Chip-scale integrated light sources are a crucial component in a broad range of photonics applications. III-V semiconductor nanowire emitters have gained attention as a fascinating approach due to their superior material properties, extremely compact size, and capability to grow directly on lattice-mismatched silicon substrates. Although there have been remarkable advances in nanowire-based emitters, their practical applications are still in the early stages due to the difficulties in integrating nanowire emitters with photonic integrated circuits. Here, we demonstrate for the first time optically pumped III-V nanowire array lasers monolithically integrated on silicon-on-insulator (SOI) platform. Selective-area growth of InGaAs/InGaP core/shell nanowires on an SOI substrate enables the nanowire array to form a photonic crystal nanobeam cavity with superior optical and structural properties, resulting in the laser to operate at room temperature. We also show that the nanowire array lasers are effectively coupled with SOI waveguides by employing nanoepitaxy on a prepatterned SOI platform. These results represent a new platform for ultracompact and energy-efficient optical links and unambiguously point the way toward practical and functional nanowire lasers.

Remote Sensing with Commutable Monolithic Laser and Detector

The ubiquitous trend toward miniaturized sensing systems demands novel concepts for compact and versatile spectroscopic tools. Conventional optical sensing setups include a light source, an analyte interaction region, and a separate external detector. We present a compact sensor providing room-temperature operation of monolithic surface-active lasers and detectors integrated on the same chip. The differentiation between emitter and detector is eliminated, which enables mutual commutation. Proof-of-principle gas measurements with a limit of detection below 400 ppm are demonstrated. This concept enables a crucial miniaturization of sensing devices.

Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure

The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. InP could open new avenues for the realization of novel devices such as high-mobility transistors in next-generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (∼8%), thermal expansion mismatch (∼84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a SiO₂ matrix. A graphene/InP/Si-tip heterostructure was realized on obtained materials, revealing rectifying behavior and promising photodetection. This work presents a significant advance toward the monolithic integration of graphene/III-V based hybrid devices onto the mainstream Si technology platform.

Photolithography-Based Patterning of Liquid Metal Interconnects for Monolithically Integrated Stretchable Circuits

We demonstrate a new patterning technique for gallium-based liquid metals on flat substrates, which can provide both high pattern resolution (∼20 μm) and alignment precision as required for highly integrated circuits. In a very similar manner as in the patterning of solid metal films by photolithography and lift-off processes, the liquid metal layer painted over the whole substrate area can be selectively removed by dissolving the underlying photoresist layer, leaving behind robust liquid patterns as defined by the photolithography. This quick and simple method makes it possible to integrate fine-scale interconnects with preformed devices precisely, which is indispensable for realizing monolithically integrated stretchable circuits. As a way for constructing stretchable integrated circuits, we propose a hybrid configuration composed of rigid device regions and liquid interconnects, which is constructed on a rigid substrate first but highly stretchable after being transferred onto an elastomeric substrate. This new method can be useful in various applications requiring both high-resolution and precisely aligned patterning of gallium-based liquid metals.

Ultrahigh Detective Heterogeneous Photosensor Arrays with In-Pixel Signal Boosting Capability for Large-Area and Skin-Compatible Electronics

An ultra-thin and large-area skin-compatible heterogeneous organic/metal-oxide photosensor array is demonstrated which is capable of sensing and boosting signals with high detectivity and signal-to-noise ratio. For the realization of ultra-flexible and high-sensitive heterogeneous photosensor arrays on a polyimide substrate having organic sensor arrays and metal-oxide boosting circuitry, solution-processing and room-temperature alternating photochemical conversion routes are applied.

Monolithically Integrated InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical Links

Monolithically integrated III-V semiconductors on a silicon-on-insulator (SOI) platform can be used as a building block for energy-efficient on-chip optical links. Epitaxial growth of III-V semiconductors on silicon, however, has been challenged by the large mismatches in lattice constants and thermal expansion coefficients between epitaxial layers and silicon substrates. Here, we demonstrate for the first time the monolithic integration of InGaAs nanowires on the SOI platform and its feasibility for photonics and optoelectronic applications. InGaAs nanowires are grown not only on a planar SOI layer but also on a 3D structured SOI layer by catalyst-free metal-organic chemical vapor deposition. The precise positioning of nanowires on 3D structures, including waveguides and gratings, reveals the versatility and practicality of the proposed platform. Photoluminescence measurements exhibit that the composition of ternary InGaAs nanowires grown on the SOI layer has wide tunability covering all telecommunication wavelengths from 1.2 to 1.8 μm. We also show that the emission from an optically pumped single nanowire is effectively coupled and transmitted through an SOI waveguide, explicitly showing that this work lays the foundation for a new platform toward energy-efficient optical links.

Monolithically Integrated High-β Nanowire Lasers on Silicon

Reliable technologies for the monolithic integration of lasers onto silicon represent the holy grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III-V semiconductors are of strong interest since they can be grown site-selectively on silicon using conventional epitaxial approaches. Their unique one-dimensional structure and high refractive index naturally facilitate low loss optical waveguiding and optical recirculation in the active NW-core region. However, lasing from NWs on silicon has not been achieved to date, due to the poor modal reflectivity at the NW-silicon interface. We demonstrate how, by inserting a tailored dielectric interlayer at the NW-Si interface, low-threshold single mode lasing can be achieved in vertical-cavity GaAs-AlGaAs core-shell NW lasers on silicon as measured at low temperature. By exploring the output characteristics along a detection direction parallel to the NW-axis, we measure very high spontaneous emission factors comparable to nanocavity lasers (β = 0.2) and achieve ultralow threshold pump energies ≤11 pJ/pulse. Analysis of the input-output characteristics of the NW lasers and the power dependence of the lasing emission line width demonstrate the potential for high pulsation rates ≥250 GHz. Such highly efficient nanolasers grown monolithically on silicon are highly promising for the realization of chip-level optical interconnects.

Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices

Achieving monolithic integration of nonreciprocal photonic devices on semiconductor substrates has been long sought by the photonics research society. One way to achieve this goal is to deposit high quality magneto-optical oxide thin films on a semiconductor substrate. In this paper, we review our recent research activity on magneto-optical oxide thin films toward the goal of monolithic integration of nonreciprocal photonic devices on silicon. We demonstrate high Faraday rotation at telecommunication wavelengths in several novel magnetooptical oxide thin films including Co substituted CeO_2−δ, Co- or Fe-substituted SrTiO_3−δ, as well as polycrystalline garnets on silicon. Figures of merit of 3~4 deg/dB and 21 deg/dB are achieved in epitaxial Sr(Ti_0.2Ga_0.4Fe_0.4)O_3−δ and polycrystalline (CeY₂)Fe₅O₁₂ films, respectively. We also demonstrate an optical isolator on silicon, based on a racetrack resonator using polycrystalline (CeY₂)Fe₅O₁₂/silicon strip-loaded waveguides. Our work demonstrates that physical vapor deposited magneto-optical oxide thin films on silicon can achieve high Faraday rotation, low optical loss and high magneto-optical figure of merit, therefore enabling novel high-performance non-reciprocal photonic devices monolithically integrated on semiconductor substrates.

A monolithically-integrated μGC chemical sensor system

Gas chromatography (GC) is used for organic and inorganic gas detection with a range of applications including screening for chemical warfare agents (CWA), breath analysis for diagnostics or law enforcement purposes, and air pollutants/indoor air quality monitoring of homes and commercial buildings. A field-portable, light weight, low power, rapid response, micro-gas chromatography (μGC) system is essential for such applications. We describe the design, fabrication and packaging of μGC on monolithically-integrated Si dies, comprised of a preconcentrator (PC), μGC column, detector and coatings for each of these components. An important feature of our system is that the same mechanical micro resonator design is used for the PC and detector. We demonstrate system performance by detecting four different CWA simulants within 2 min. We present theoretical analyses for cost/power comparisons of monolithic versus hybrid μGC systems. We discuss thermal isolation in monolithic systems to improve overall performance. Our monolithically-integrated μGC, relative to its hybrid cousin, will afford equal or slightly lower cost, a footprint that is 1/2 to 1/3 the size and an improved resolution of 4 to 25%.

Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors

Vertical integration of amorphous hydrogenated silicon diodes on CMOS readout chips offers several advantages compared to standard CMOS imagers in terms of sensitivity, dynamic range and dark current while at the same time introducing some undesired transient effects leading to image lag. Performance of such sensors is here reported and their transient behaviour is analysed and compared to the one of corresponding amorphous silicon test diodes deposited on glass. The measurements are further compared to simulations for a deeper investigation. The long time constant observed in dark or photocurrent decay is found to be rather independent of the density of defects present in the intrinsic layer of the amorphous silicon diode.