1
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Wang Y, Chen M, Yao C, Ma J, Yan T, Penty R, Cheng Q. Asymmetrical estimator for training encapsulated deep photonic neural networks. Nat Commun 2025; 16:2143. [PMID: 40032949 DOI: 10.1038/s41467-025-57459-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/24/2024] [Accepted: 02/24/2025] [Indexed: 03/05/2025] Open
Abstract
Photonic neural networks (PNNs) are fast in-propagation and high bandwidth paradigms that aim to popularize reproducible NN acceleration with higher efficiency and lower cost. However, the training of PNN is known to be challenging, where the device-to-device and system-to-system variations create imperfect knowledge of the PNN. Despite backpropagation (BP)-based training algorithms being the industry standard for their robustness, generality, and fast gradient convergence for digital training, existing PNN-BP methods rely heavily on accurate intermediate state extraction or extensive computational resources for deep PNNs (DPNNs). The truncated photonic signal propagation and the computation overhead bottleneck DPNN's operation efficiency and increase system construction cost. Here, we introduce the asymmetrical training (AsyT) method, tailored for encapsulated DPNNs, where the signal is preserved in the analogue photonic domain for the entire structure. AsyT offers a lightweight solution for DPNNs with minimum readouts, fast and energy-efficient operation, and minimum system footprint. AsyT's ease of operation, error tolerance, and generality aim to promote PNN acceleration in a widened operational scenario despite the fabrication variations and imperfect controls. We demonstrated AsyT for encapsulated DPNN with integrated photonic chips, repeatably enhancing the performance from in-silico BP for different network structures and datasets.
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Affiliation(s)
- Yizhi Wang
- Centre for Photonic Systems, Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge, UK
| | - Minjia Chen
- Centre for Photonic Systems, Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge, UK
| | - Chunhui Yao
- Centre for Photonic Systems, Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge, UK
- GlitterinTech Limited, Xuzhou, China
| | - Jie Ma
- GlitterinTech Limited, Xuzhou, China
| | - Ting Yan
- GlitterinTech Limited, Xuzhou, China
| | - Richard Penty
- Centre for Photonic Systems, Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge, UK
| | - Qixiang Cheng
- Centre for Photonic Systems, Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge, UK.
- GlitterinTech Limited, Xuzhou, China.
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2
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Chen C, Yang Z, Wang T, Wang Y, Gao K, Wu J, Wang J, Qiu J, Tan D. Ultra-broadband all-optical nonlinear activation function enabled by MoTe 2/optical waveguide integrated devices. Nat Commun 2024; 15:9047. [PMID: 39426957 PMCID: PMC11490568 DOI: 10.1038/s41467-024-53371-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/12/2024] [Accepted: 10/10/2024] [Indexed: 10/21/2024] Open
Abstract
All-optical nonlinear activation functions (NAFs) are crucial for enabling rapid optical neural networks (ONNs). As linear matrix computation advances in integrated ONNs, on-chip all-optical NAFs face challenges such as limited integration, high latency, substantial power consumption, and a high activation threshold. In this work, we develop an integrated nonlinear optical activator based on the butt-coupling integration of two-dimensional (2D) MoTe2 and optical waveguides (OWGs). The activator exhibits an ultra-broadband response from visible to near-infrared wavelength, a low activation threshold of 0.94 μW, a small device size (~50 µm2), an ultra-fast response rate (2.08 THz), and high-density integration. The excellent nonlinear effects and broadband response of 2D materials have been utilized to create all-optical NAFs. These activators were applied to simulate MNIST handwritten digit recognition, achieving an accuracy of 97.6%. The results underscore the potential application of this approach in ONNs. Moreover, the classification of more intricate CIFAR-10 images demonstrated a generalizable accuracy of 94.6%. The present nonlinear activator promises a general platform for three-dimensional (3D) ultra-broadband ONNs with dense integration and low activation thresholds by integrating a variety of strong nonlinear optical (NLO) materials (e.g., 2D materials) and OWGs in glass.
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Affiliation(s)
| | - Zhan Yang
- Aerospace Laser Technology and System Department, CAS Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tao Wang
- Zhejiang Lab, Hangzhou, Zhejiang, 311121, China
| | - Yalun Wang
- Zhejiang Lab, Hangzhou, Zhejiang, 311121, China
| | - Kai Gao
- Zhejiang Lab, Hangzhou, Zhejiang, 311121, China
| | - Jiajia Wu
- Zhejiang Lab, Hangzhou, Zhejiang, 311121, China
| | - Jun Wang
- Aerospace Laser Technology and System Department, CAS Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jianrong Qiu
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Dezhi Tan
- Zhejiang Lab, Hangzhou, Zhejiang, 311121, China.
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China.
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3
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Dai Y, He Q, Huang Y, Duan X, Lin Z. Solution-Processable and Printable Two-Dimensional Transition Metal Dichalcogenide Inks. Chem Rev 2024; 124:5795-5845. [PMID: 38639932 DOI: 10.1021/acs.chemrev.3c00791] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/20/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) with layered crystal structures have been attracting enormous research interest for their atomic thickness, mechanical flexibility, and excellent electronic/optoelectronic properties for applications in diverse technological areas. Solution-processable 2D TMD inks are promising for large-scale production of functional thin films at an affordable cost, using high-throughput solution-based processing techniques such as printing and roll-to-roll fabrications. This paper provides a comprehensive review of the chemical synthesis of solution-processable and printable 2D TMD ink materials and the subsequent assembly into thin films for diverse applications. We start with the chemical principles and protocols of various synthesis methods for 2D TMD nanosheet crystals in the solution phase. The solution-based techniques for depositing ink materials into solid-state thin films are discussed. Then, we review the applications of these solution-processable thin films in diverse technological areas including electronics, optoelectronics, and others. To conclude, a summary of the key scientific/technical challenges and future research opportunities of solution-processable TMD inks is provided.
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Affiliation(s)
- Yongping Dai
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing 100084, China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 99907, China
| | - Yu Huang
- Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Zhaoyang Lin
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing 100084, China
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4
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Feng C, Gu J, Zhu H, Ning S, Tang R, Hlaing M, Midkiff J, Jain S, Pan DZ, Chen RT. Integrated multi-operand optical neurons for scalable and hardware-efficient deep learning. NANOPHOTONICS (BERLIN, GERMANY) 2024; 13:2193-2206. [PMID: 39634509 PMCID: PMC11501373 DOI: 10.1515/nanoph-2023-0554] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/30/2023] [Accepted: 12/06/2023] [Indexed: 12/07/2024]
Abstract
Optical neural networks (ONNs) are promising hardware platforms for next-generation neuromorphic computing due to their high parallelism, low latency, and low energy consumption. However, previous integrated photonic tensor cores (PTCs) consume numerous single-operand optical modulators for signal and weight encoding, leading to large area costs and high propagation loss to implement large tensor operations. This work proposes a scalable and efficient optical dot-product engine based on customized multi-operand photonic devices, namely multi-operand optical neuron (MOON). We experimentally demonstrate the utility of a MOON using a multi-operand-Mach-Zehnder-interferometer (MOMZI) in image recognition tasks. Specifically, our MOMZI-based ONN achieves a measured accuracy of 85.89 % in the street view house number (SVHN) recognition dataset with 4-bit voltage control precision. Furthermore, our performance analysis reveals that a 128 × 128 MOMZI-based PTCs outperform their counterparts based on single-operand MZIs by one to two order-of-magnitudes in propagation loss, optical delay, and total device footprint, with comparable matrix expressivity.
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Affiliation(s)
- Chenghao Feng
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX78758, USA
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX78705, USA
| | - Jiaqi Gu
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX78705, USA
- School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ85287, USA
| | - Hanqing Zhu
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX78705, USA
| | - Shupeng Ning
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX78758, USA
| | - Rongxing Tang
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX78758, USA
| | - May Hlaing
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX78705, USA
| | - Jason Midkiff
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX78705, USA
| | - Sourabh Jain
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX78758, USA
| | - David Z. Pan
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX78705, USA
| | - Ray T. Chen
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX78758, USA
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX78705, USA
- Omega Optics, Inc., 8500 Shoal Creek Blvd., Bldg. 4, Suite 200, Austin, TX78757, USA
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Kutluyarov RV, Zakoyan AG, Voronkov GS, Grakhova EP, Butt MA. Neuromorphic Photonics Circuits: Contemporary Review. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:3139. [PMID: 38133036 PMCID: PMC10745993 DOI: 10.3390/nano13243139] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/13/2023] [Revised: 12/08/2023] [Accepted: 12/10/2023] [Indexed: 12/23/2023]
Abstract
Neuromorphic photonics is a cutting-edge fusion of neuroscience-inspired computing and photonics technology to overcome the constraints of conventional computing architectures. Its significance lies in the potential to transform information processing by mimicking the parallelism and efficiency of the human brain. Using optics and photonics principles, neuromorphic devices can execute intricate computations swiftly and with impressive energy efficiency. This innovation holds promise for advancing artificial intelligence and machine learning while addressing the limitations of traditional silicon-based computing. Neuromorphic photonics could herald a new era of computing that is more potent and draws inspiration from cognitive processes, leading to advancements in robotics, pattern recognition, and advanced data processing. This paper reviews the recent developments in neuromorphic photonic integrated circuits, applications, and current challenges.
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Affiliation(s)
- Ruslan V. Kutluyarov
- School of Photonics Engineering and Research Advances (SPhERA), Ufa University of Science and Technology, 32, Z. Validi St., 450076 Ufa, Russia
| | - Aida G. Zakoyan
- School of Photonics Engineering and Research Advances (SPhERA), Ufa University of Science and Technology, 32, Z. Validi St., 450076 Ufa, Russia
| | - Grigory S. Voronkov
- School of Photonics Engineering and Research Advances (SPhERA), Ufa University of Science and Technology, 32, Z. Validi St., 450076 Ufa, Russia
| | - Elizaveta P. Grakhova
- School of Photonics Engineering and Research Advances (SPhERA), Ufa University of Science and Technology, 32, Z. Validi St., 450076 Ufa, Russia
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Fischer B, Chemnitz M, Zhu Y, Perron N, Roztocki P, MacLellan B, Di Lauro L, Aadhi A, Rimoldi C, Falk TH, Morandotti R. Neuromorphic Computing via Fission-based Broadband Frequency Generation. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2303835. [PMID: 37786262 PMCID: PMC10724387 DOI: 10.1002/advs.202303835] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2023] [Revised: 08/31/2023] [Indexed: 10/04/2023]
Abstract
The performance limitations of traditional computer architectures have led to the rise of brain-inspired hardware, with optical solutions gaining popularity due to the energy efficiency, high speed, and scalability of linear operations. However, the use of optics to emulate the synaptic activity of neurons has remained a challenge since the integration of nonlinear nodes is power-hungry and, thus, hard to scale. Neuromorphic wave computing offers a new paradigm for energy-efficient information processing, building upon transient and passively nonlinear interactions between optical modes in a waveguide. Here, an implementation of this concept is presented using broadband frequency conversion by coherent higher-order soliton fission in a single-mode fiber. It is shown that phase encoding on femtosecond pulses at the input, alongside frequency selection and weighting at the system output, makes transient spectro-temporal system states interpretable and allows for the energy-efficient emulation of various digital neural networks. The experiments in a compact, fully fiber-integrated setup substantiate an anticipated enhancement in computational performance with increasing system nonlinearity. The findings suggest that broadband frequency generation, accessible on-chip and in-fiber with off-the-shelf components, may challenge the traditional approach to node-based brain-inspired hardware design, ultimately leading to energy-efficient, scalable, and dependable computing with minimal optical hardware requirements.
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Affiliation(s)
- Bennet Fischer
- Institut National de la Recherche Scientifique – ÉnergieMatériaux et Télécommunications1650 Blvd. Lionel‐BouletVarennesQuebecJ3X1S2Canada
- Leibniz Institute of Photonic TechnologyAlbert‐Einstein Str. 907745JenaGermany
| | - Mario Chemnitz
- Institut National de la Recherche Scientifique – ÉnergieMatériaux et Télécommunications1650 Blvd. Lionel‐BouletVarennesQuebecJ3X1S2Canada
- Leibniz Institute of Photonic TechnologyAlbert‐Einstein Str. 907745JenaGermany
| | - Yi Zhu
- Institut National de la Recherche Scientifique – ÉnergieMatériaux et Télécommunications1650 Blvd. Lionel‐BouletVarennesQuebecJ3X1S2Canada
| | - Nicolas Perron
- Institut National de la Recherche Scientifique – ÉnergieMatériaux et Télécommunications1650 Blvd. Lionel‐BouletVarennesQuebecJ3X1S2Canada
| | - Piotr Roztocki
- Institut National de la Recherche Scientifique – ÉnergieMatériaux et Télécommunications1650 Blvd. Lionel‐BouletVarennesQuebecJ3X1S2Canada
- Ki3 Photonics Technologies2547 Rue SicardMontrealQuebecH1V 2Y8Canada
| | - Benjamin MacLellan
- Institut National de la Recherche Scientifique – ÉnergieMatériaux et Télécommunications1650 Blvd. Lionel‐BouletVarennesQuebecJ3X1S2Canada
| | - Luigi Di Lauro
- Institut National de la Recherche Scientifique – ÉnergieMatériaux et Télécommunications1650 Blvd. Lionel‐BouletVarennesQuebecJ3X1S2Canada
| | - A. Aadhi
- Institut National de la Recherche Scientifique – ÉnergieMatériaux et Télécommunications1650 Blvd. Lionel‐BouletVarennesQuebecJ3X1S2Canada
| | - Cristina Rimoldi
- Institut National de la Recherche Scientifique – ÉnergieMatériaux et Télécommunications1650 Blvd. Lionel‐BouletVarennesQuebecJ3X1S2Canada
- Dipartimento di Elettronica e TelecomunicazioniPolitecnico di TorinoCorso Duca degli Abruzzi 24Torino10129Italy
| | - Tiago H. Falk
- Institut National de la Recherche Scientifique – ÉnergieMatériaux et Télécommunications1650 Blvd. Lionel‐BouletVarennesQuebecJ3X1S2Canada
| | - Roberto Morandotti
- Institut National de la Recherche Scientifique – ÉnergieMatériaux et Télécommunications1650 Blvd. Lionel‐BouletVarennesQuebecJ3X1S2Canada
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7
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Zhong C, Liao K, Dai T, Wei M, Ma H, Wu J, Zhang Z, Ye Y, Luo Y, Chen Z, Jian J, Sun C, Tang B, Zhang P, Liu R, Li J, Yang J, Li L, Liu K, Hu X, Lin H. Graphene/silicon heterojunction for reconfigurable phase-relevant activation function in coherent optical neural networks. Nat Commun 2023; 14:6939. [PMID: 37907477 PMCID: PMC10618201 DOI: 10.1038/s41467-023-42116-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/18/2023] [Accepted: 09/29/2023] [Indexed: 11/02/2023] Open
Abstract
Optical neural networks (ONNs) herald a new era in information and communication technologies and have implemented various intelligent applications. In an ONN, the activation function (AF) is a crucial component determining the network performances and on-chip AF devices are still in development. Here, we first demonstrate on-chip reconfigurable AF devices with phase activation fulfilled by dual-functional graphene/silicon (Gra/Si) heterojunctions. With optical modulation and detection in one device, time delays are shorter, energy consumption is lower, reconfigurability is higher and the device footprint is smaller than other on-chip AF strategies. The experimental modulation voltage (power) of our Gra/Si heterojunction achieves as low as 1 V (0.5 mW), superior to many pure silicon counterparts. In the photodetection aspect, a high responsivity of over 200 mA/W is realized. Special nonlinear functions generated are fed into a complex-valued ONN to challenge handwritten letters and image recognition tasks, showing improved accuracy and potential of high-efficient, all-component-integration on-chip ONN. Our results offer new insights for on-chip ONN devices and pave the way to high-performance integrated optoelectronic computing circuits.
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Affiliation(s)
- Chuyu Zhong
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Kun Liao
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
| | - Tianxiang Dai
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
| | - Maoliang Wei
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Hui Ma
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Jianghong Wu
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, Zhejiang, 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, Zhejiang, 310024, China
| | - Zhibin Zhang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
| | - Yuting Ye
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, Zhejiang, 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, Zhejiang, 310024, China
| | - Ye Luo
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, Zhejiang, 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, Zhejiang, 310024, China
| | - Zequn Chen
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, Zhejiang, 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, Zhejiang, 310024, China
| | - Jialing Jian
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, Zhejiang, 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, Zhejiang, 310024, China
| | - Chunlei Sun
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, Zhejiang, 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, Zhejiang, 310024, China
| | - Bo Tang
- Institute of Microelectronics of the Chinese Academy of Sciences, 100029, Beijing, China
| | - Peng Zhang
- Institute of Microelectronics of the Chinese Academy of Sciences, 100029, Beijing, China
| | - Ruonan Liu
- Institute of Microelectronics of the Chinese Academy of Sciences, 100029, Beijing, China
| | - Junying Li
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Jianyi Yang
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Lan Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, Zhejiang, 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, Zhejiang, 310024, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
| | - Xiaoyong Hu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China.
| | - Hongtao Lin
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China.
- MOE Frontier Science Center for Brain Science & Brain-Machine Integration, Zhejiang University, Hangzhou, 310027, China.
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Zhang M, Yang L, Wu X, Wang J. Black Phosphorus for Photonic Integrated Circuits. RESEARCH (WASHINGTON, D.C.) 2023; 6:0206. [PMID: 37593339 PMCID: PMC10430873 DOI: 10.34133/research.0206] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Accepted: 07/19/2023] [Indexed: 08/19/2023]
Abstract
Black phosphorus gives several advantages and complementarities over other two-dimensional materials. It has drawn extensive interest owing to its relatively high carrier mobility, wide tunable bandgap, and in-plane anisotropy in recent years. This manuscript briefly reviews the structure and physical properties of black phosphorus and targets on black phosphorus for photonic integrated circuits. Some of the applications are discussed including photodetection, optical modulation, light emission, and polarization conversion. Corresponding recent progresses, associated challenges, and future potentials are covered.
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Affiliation(s)
| | | | | | - Junjia Wang
- National Research Center for Optical Sensors/communications Integrated Networks, School of Electronic Science and Engineering,
Southeast University, 2 Sipailou, Nanjing 210096, China
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