1
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Liles SD, Halverson DJ, Wang Z, Shamim A, Eggli RS, Jin IK, Hillier J, Kumar K, Vorreiter I, Rendell MJ, Huang JY, Escott CC, Hudson FE, Lim WH, Culcer D, Dzurak AS, Hamilton AR. A singlet-triplet hole-spin qubit in MOS silicon. Nat Commun 2024; 15:7690. [PMID: 39227367 DOI: 10.1038/s41467-024-51902-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/02/2024] [Accepted: 08/19/2024] [Indexed: 09/05/2024] Open
Abstract
Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics, providing opportunities to further optimise spin qubits. Here, we demonstrate a singlet-triplet qubit using hole states in a planar metal-oxide-semiconductor double quantum dot. We demonstrate rapid qubit control with singlet-triplet oscillations up to 400 MHz. The qubit exhibits promising coherence, with a maximum dephasing time of 600 ns, which is enhanced to 1.3 μs using refocusing techniques. We investigate the magnetic field anisotropy of the eigenstates, and determine a magnetic field orientation to improve the qubit initialisation fidelity. These results present a step forward for spin qubit technology, by implementing a high quality singlet-triplet hole-spin qubit in planar architecture suitable for scaling up to 2D arrays of coupled qubits.
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Affiliation(s)
- S D Liles
- School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia.
| | - D J Halverson
- School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Z Wang
- School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
| | - A Shamim
- School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
| | - R S Eggli
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056, Basel, Switzerland
| | - I K Jin
- School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
- Center for Emergent Matter Science, RIKEN, 2-1, Hirosawa, Wako-shi, 351-0198, Saitama, Japan
| | - J Hillier
- School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
| | - K Kumar
- School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
| | - I Vorreiter
- School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
| | - M J Rendell
- School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
| | - J Y Huang
- School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, NSW, 2052, Australia
- Diraq, Sydney, NSW, Australia
| | - C C Escott
- School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, NSW, 2052, Australia
- Diraq, Sydney, NSW, Australia
| | - F E Hudson
- School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, NSW, 2052, Australia
- Diraq, Sydney, NSW, Australia
| | - W H Lim
- School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, NSW, 2052, Australia
- Diraq, Sydney, NSW, Australia
| | - D Culcer
- School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
| | - A S Dzurak
- School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, NSW, 2052, Australia
- Diraq, Sydney, NSW, Australia
| | - A R Hamilton
- School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
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2
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Hsueh YL, Keith D, Chung Y, Gorman SK, Kranz L, Monir S, Kembrey Z, Keizer JG, Rahman R, Simmons MY. Engineering Spin-Orbit Interactions in Silicon Qubits at the Atomic-Scale. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312736. [PMID: 38506626 DOI: 10.1002/adma.202312736] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/26/2023] [Revised: 02/25/2024] [Indexed: 03/21/2024]
Abstract
Spin-orbit interactions arise whenever the bulk inversion symmetry and/or structural inversion symmetry of a crystal is broken providing a bridge between a qubit's spin and orbital degree of freedom. While strong interactions can facilitate fast qubit operations by all-electrical control, they also provide a mechanism to couple charge noise thereby limiting qubit lifetimes. Previously believed to be negligible in bulk silicon, recent silicon nano-electronic devices have shown larger than bulk spin-orbit coupling strengths from Dresselhaus and Rashba couplings. Here, it is shown that with precision placement of phosphorus atoms in silicon along the [110] direction (without inversion symmetry) or [111] direction (with inversion symmetry), a wide range of Dresselhaus and Rashba coupling strength can be achieved from zero to 1113 × 10-13eV-cm. It is shown that with precision placement of phosphorus atoms, the local symmetry (C2v, D2d, and D3d) can be changed to engineer spin-orbit interactions. Since spin-orbit interactions affect both qubit operation and lifetimes, understanding their impact is essential for quantum processor design.
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Affiliation(s)
- Yu-Ling Hsueh
- Silicon Quantum Computing Pty Ltd., Level 2, Newton Building, UNSW Sydney, Kensington, NSW, 2052, Australia
- School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Daniel Keith
- Silicon Quantum Computing Pty Ltd., Level 2, Newton Building, UNSW Sydney, Kensington, NSW, 2052, Australia
- Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Yousun Chung
- Silicon Quantum Computing Pty Ltd., Level 2, Newton Building, UNSW Sydney, Kensington, NSW, 2052, Australia
- Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Samuel K Gorman
- Silicon Quantum Computing Pty Ltd., Level 2, Newton Building, UNSW Sydney, Kensington, NSW, 2052, Australia
- Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Ludwik Kranz
- Silicon Quantum Computing Pty Ltd., Level 2, Newton Building, UNSW Sydney, Kensington, NSW, 2052, Australia
- Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Serajum Monir
- Silicon Quantum Computing Pty Ltd., Level 2, Newton Building, UNSW Sydney, Kensington, NSW, 2052, Australia
- School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Zachary Kembrey
- School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Joris G Keizer
- Silicon Quantum Computing Pty Ltd., Level 2, Newton Building, UNSW Sydney, Kensington, NSW, 2052, Australia
- Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Rajib Rahman
- Silicon Quantum Computing Pty Ltd., Level 2, Newton Building, UNSW Sydney, Kensington, NSW, 2052, Australia
- School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Michelle Y Simmons
- Silicon Quantum Computing Pty Ltd., Level 2, Newton Building, UNSW Sydney, Kensington, NSW, 2052, Australia
- Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
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3
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Cifuentes JD, Tanttu T, Gilbert W, Huang JY, Vahapoglu E, Leon RCC, Serrano S, Otter D, Dunmore D, Mai PY, Schlattner F, Feng M, Itoh K, Abrosimov N, Pohl HJ, Thewalt M, Laucht A, Yang CH, Escott CC, Lim WH, Hudson FE, Rahman R, Dzurak AS, Saraiva A. Bounds to electron spin qubit variability for scalable CMOS architectures. Nat Commun 2024; 15:4299. [PMID: 38769086 PMCID: PMC11106088 DOI: 10.1038/s41467-024-48557-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 05/06/2024] [Indexed: 05/22/2024] Open
Abstract
Spins of electrons in silicon MOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with respect to their impact upon qubit performance. We chart spin qubit variability due to the unavoidable atomic-scale roughness of the Si/SiO2 interface, compiling experiments across 12 devices, and develop theoretical tools to analyse these results. Atomistic tight binding and path integral Monte Carlo methods are adapted to describe fluctuations in devices with millions of atoms by directly analysing their wavefunctions and electron paths instead of their energy spectra. We correlate the effect of roughness with the variability in qubit position, deformation, valley splitting, valley phase, spin-orbit coupling and exchange coupling. These variabilities are found to be bounded, and they lie within the tolerances for scalable architectures for quantum computing as long as robust control methods are incorporated.
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Affiliation(s)
- Jesús D Cifuentes
- School of Electrical Engineering and Telecommunications, University of New South Wales, NSW 2052, Sydney, NSW, Australia.
| | - Tuomo Tanttu
- School of Electrical Engineering and Telecommunications, University of New South Wales, NSW 2052, Sydney, NSW, Australia
- Diraq, Sydney, NSW, Australia
| | - Will Gilbert
- School of Electrical Engineering and Telecommunications, University of New South Wales, NSW 2052, Sydney, NSW, Australia
- Diraq, Sydney, NSW, Australia
| | - Jonathan Y Huang
- School of Electrical Engineering and Telecommunications, University of New South Wales, NSW 2052, Sydney, NSW, Australia
| | - Ensar Vahapoglu
- School of Electrical Engineering and Telecommunications, University of New South Wales, NSW 2052, Sydney, NSW, Australia
- Diraq, Sydney, NSW, Australia
| | - Ross C C Leon
- School of Electrical Engineering and Telecommunications, University of New South Wales, NSW 2052, Sydney, NSW, Australia
| | - Santiago Serrano
- School of Electrical Engineering and Telecommunications, University of New South Wales, NSW 2052, Sydney, NSW, Australia
| | - Dennis Otter
- School of Electrical Engineering and Telecommunications, University of New South Wales, NSW 2052, Sydney, NSW, Australia
| | - Daniel Dunmore
- School of Electrical Engineering and Telecommunications, University of New South Wales, NSW 2052, Sydney, NSW, Australia
| | - Philip Y Mai
- School of Electrical Engineering and Telecommunications, University of New South Wales, NSW 2052, Sydney, NSW, Australia
| | - Frédéric Schlattner
- School of Electrical Engineering and Telecommunications, University of New South Wales, NSW 2052, Sydney, NSW, Australia
- Solid State Physics Laboratory, Department of Physics, ETH Zurich, Zurich, 8093, Switzerland
| | - MengKe Feng
- School of Electrical Engineering and Telecommunications, University of New South Wales, NSW 2052, Sydney, NSW, Australia
| | - Kohei Itoh
- School of Fundamental Science and Technology, Keio University, Yokohama, Japan
| | | | | | - Michael Thewalt
- Department of Physics, Simon Fraser University, V5A 1S6, Burnaby, BC, Canada
| | - Arne Laucht
- School of Electrical Engineering and Telecommunications, University of New South Wales, NSW 2052, Sydney, NSW, Australia
- Diraq, Sydney, NSW, Australia
| | - Chih Hwan Yang
- School of Electrical Engineering and Telecommunications, University of New South Wales, NSW 2052, Sydney, NSW, Australia
- Diraq, Sydney, NSW, Australia
| | - Christopher C Escott
- School of Electrical Engineering and Telecommunications, University of New South Wales, NSW 2052, Sydney, NSW, Australia
- Diraq, Sydney, NSW, Australia
| | - Wee Han Lim
- School of Electrical Engineering and Telecommunications, University of New South Wales, NSW 2052, Sydney, NSW, Australia
- Diraq, Sydney, NSW, Australia
| | - Fay E Hudson
- School of Electrical Engineering and Telecommunications, University of New South Wales, NSW 2052, Sydney, NSW, Australia
- Diraq, Sydney, NSW, Australia
| | - Rajib Rahman
- School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Andrew S Dzurak
- School of Electrical Engineering and Telecommunications, University of New South Wales, NSW 2052, Sydney, NSW, Australia
- Diraq, Sydney, NSW, Australia
| | - Andre Saraiva
- School of Electrical Engineering and Telecommunications, University of New South Wales, NSW 2052, Sydney, NSW, Australia.
- Diraq, Sydney, NSW, Australia.
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4
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Weinstein AJ, Reed MD, Jones AM, Andrews RW, Barnes D, Blumoff JZ, Euliss LE, Eng K, Fong BH, Ha SD, Hulbert DR, Jackson CAC, Jura M, Keating TE, Kerckhoff J, Kiselev AA, Matten J, Sabbir G, Smith A, Wright J, Rakher MT, Ladd TD, Borselli MG. Universal logic with encoded spin qubits in silicon. Nature 2023; 615:817-822. [PMID: 36746190 PMCID: PMC10060158 DOI: 10.1038/s41586-023-05777-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/01/2022] [Accepted: 01/31/2023] [Indexed: 02/08/2023]
Abstract
Quantum computation features known examples of hardware acceleration for certain problems, but is challenging to realize because of its susceptibility to small errors from noise or imperfect control. The principles of fault tolerance may enable computational acceleration with imperfect hardware, but they place strict requirements on the character and correlation of errors1. For many qubit technologies2-21, some challenges to achieving fault tolerance can be traced to correlated errors arising from the need to control qubits by injecting microwave energy matching qubit resonances. Here we demonstrate an alternative approach to quantum computation that uses energy-degenerate encoded qubit states controlled by nearest-neighbour contact interactions that partially swap the spin states of electrons with those of their neighbours. Calibrated sequences of such partial swaps, implemented using only voltage pulses, allow universal quantum control while bypassing microwave-associated correlated error sources1,22-28. We use an array of six 28Si/SiGe quantum dots, built using a platform that is capable of extending in two dimensions following processes used in conventional microelectronics29. We quantify the operational fidelity of universal control of two encoded qubits using interleaved randomized benchmarking30, finding a fidelity of 96.3% ± 0.7% for encoded controlled NOT operations and 99.3% ± 0.5% for encoded SWAP. The quantum coherence offered by enriched silicon5-9,16,18,20,22,27,29,31-37, the all-electrical and low-crosstalk-control of partial swap operations1,22-28 and the configurable insensitivity of our encoding to certain error sources28,33,34,38 all combine to offer a strong pathway towards scalable fault tolerance and computational advantage.
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Affiliation(s)
| | | | | | | | | | | | | | - Kevin Eng
- HRL Laboratories, LLC, Malibu, CA, USA
| | | | - Sieu D Ha
- HRL Laboratories, LLC, Malibu, CA, USA
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5
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Surface functionalization of Si6Li6 cluster with superalkalis to achieve high nonlinear optical response: A DFT study. Colloids Surf A Physicochem Eng Asp 2022. [DOI: 10.1016/j.colsurfa.2022.129985] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2022]
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6
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A silicon singlet-triplet qubit driven by spin-valley coupling. Nat Commun 2022; 13:641. [PMID: 35110561 PMCID: PMC8810768 DOI: 10.1038/s41467-022-28302-y] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/24/2021] [Accepted: 12/22/2021] [Indexed: 11/25/2022] Open
Abstract
Spin–orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar striplines. Here, we demonstrate a singlet–triplet qubit operating mode that can drive qubit evolution at frequencies in excess of 200 MHz. This approach offers a means to electrically turn on and off fast control, while providing high logic gate orthogonality and long qubit dephasing times. We utilize this operational mode for dynamical decoupling experiments to probe the charge noise power spectrum in a silicon metal-oxide-semiconductor double quantum dot. In addition, we assess qubit frequency drift over longer timescales to capture low-frequency noise. We present the charge noise power spectral density up to 3 MHz, which exhibits a 1/fα dependence consistent with α ~ 0.7, over 9 orders of magnitude in noise frequency. Spin-orbit coupling in gate-defined quantum dots in silicon metal-oxide semiconductors provides a promising route for electrical control of spin qubits. Here, the authors demonstrate that intervalley spin–orbit interaction enables fast singlet–triplet qubit rotations in this platform, at frequencies exceeding 200MHz.
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7
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Jirovec D, Hofmann A, Ballabio A, Mutter PM, Tavani G, Botifoll M, Crippa A, Kukucka J, Sagi O, Martins F, Saez-Mollejo J, Prieto I, Borovkov M, Arbiol J, Chrastina D, Isella G, Katsaros G. A singlet-triplet hole spin qubit in planar Ge. NATURE MATERIALS 2021; 20:1106-1112. [PMID: 34083775 DOI: 10.1038/s41563-021-01022-2] [Citation(s) in RCA: 24] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/30/2020] [Accepted: 04/23/2021] [Indexed: 06/12/2023]
Abstract
Spin qubits are considered to be among the most promising candidates for building a quantum processor. Group IV hole spin qubits are particularly interesting owing to their ease of operation and compatibility with Si technology. In addition, Ge offers the option for monolithic superconductor-semiconductor integration. Here, we demonstrate a hole spin qubit operating at fields below 10 mT, the critical field of Al, by exploiting the large out-of-plane hole g-factors in planar Ge and by encoding the qubit into the singlet-triplet states of a double quantum dot. We observe electrically controlled g-factor difference-driven and exchange-driven rotations with tunable frequencies exceeding 100 MHz and dephasing times of 1 μs, which we extend beyond 150 μs using echo techniques. These results demonstrate that Ge hole singlet-triplet qubits are competing with state-of-the-art GaAs and Si singlet-triplet qubits. In addition, their rotation frequencies and coherence are comparable with those of Ge single spin qubits, but singlet-triplet qubits can be operated at much lower fields, emphasizing their potential for on-chip integration with superconducting technologies.
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Affiliation(s)
- Daniel Jirovec
- Institute of Science and Technology Austria, Klosterneuburg, Austria.
| | - Andrea Hofmann
- Institute of Science and Technology Austria, Klosterneuburg, Austria
| | - Andrea Ballabio
- Laboratory for Epitaxial Nanostructures on Silicon and Spintronics, Physics Department, Politecnico di Milano, Como, Italy
| | - Philipp M Mutter
- Department of Physics, University of Konstanz, Konstanz, Germany
| | - Giulio Tavani
- Laboratory for Epitaxial Nanostructures on Silicon and Spintronics, Physics Department, Politecnico di Milano, Como, Italy
| | - Marc Botifoll
- Catalan Institute of Nanoscience and Nanotechnology, Spanish National Research Council, Barcelona Institute of Science and Technology, Autonomous University of Barcelona, Barcelona, Spain
| | - Alessandro Crippa
- Institute of Science and Technology Austria, Klosterneuburg, Austria
| | - Josip Kukucka
- Institute of Science and Technology Austria, Klosterneuburg, Austria
| | - Oliver Sagi
- Institute of Science and Technology Austria, Klosterneuburg, Austria
| | - Frederico Martins
- Institute of Science and Technology Austria, Klosterneuburg, Austria
| | | | - Ivan Prieto
- Institute of Science and Technology Austria, Klosterneuburg, Austria
| | - Maksim Borovkov
- Institute of Science and Technology Austria, Klosterneuburg, Austria
| | - Jordi Arbiol
- Catalan Institute of Nanoscience and Nanotechnology, Spanish National Research Council, Barcelona Institute of Science and Technology, Autonomous University of Barcelona, Barcelona, Spain
- Catalan Institution for Research and Advanced Studies, Barcelona, Spain
| | - Daniel Chrastina
- Laboratory for Epitaxial Nanostructures on Silicon and Spintronics, Physics Department, Politecnico di Milano, Como, Italy
| | - Giovanni Isella
- Laboratory for Epitaxial Nanostructures on Silicon and Spintronics, Physics Department, Politecnico di Milano, Como, Italy
| | - Georgios Katsaros
- Institute of Science and Technology Austria, Klosterneuburg, Austria.
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8
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de Leon NP, Itoh KM, Kim D, Mehta KK, Northup TE, Paik H, Palmer BS, Samarth N, Sangtawesin S, Steuerman DW. Materials challenges and opportunities for quantum computing hardware. Science 2021; 372:372/6539/eabb2823. [PMID: 33859004 DOI: 10.1126/science.abb2823] [Citation(s) in RCA: 65] [Impact Index Per Article: 21.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Quantum computing hardware technologies have advanced during the past two decades, with the goal of building systems that can solve problems that are intractable on classical computers. The ability to realize large-scale systems depends on major advances in materials science, materials engineering, and new fabrication techniques. We identify key materials challenges that currently limit progress in five quantum computing hardware platforms, propose how to tackle these problems, and discuss some new areas for exploration. Addressing these materials challenges will require scientists and engineers to work together to create new, interdisciplinary approaches beyond the current boundaries of the quantum computing field.
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Affiliation(s)
- Nathalie P de Leon
- Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
| | - Kohei M Itoh
- School of Fundamental Science and Technology, Keio University, Yokohama 223-8522, Japan
| | - Dohun Kim
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Karan K Mehta
- Department of Physics, Institute for Quantum Electronics, ETH Zürich, 8092 Zürich, Switzerland
| | - Tracy E Northup
- Institut für Experimentalphysik, Universität Innsbruck, 6020 Innsbruck, Austria
| | - Hanhee Paik
- IBM Quantum, IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, USA.
| | - B S Palmer
- Laboratory for Physical Sciences, University of Maryland, College Park, MD 20740, USA.,Quantum Materials Center, University of Maryland, College Park, MD 20742, USA
| | - N Samarth
- Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA
| | - Sorawis Sangtawesin
- School of Physics and Center of Excellence in Advanced Functional Materials, Suranaree University of Technology, Nakhon Ratchasima 30000, Thailand
| | - D W Steuerman
- Kavli Foundation, 5715 Mesmer Avenue, Los Angeles, CA 90230, USA
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9
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Kandel YP, Qiao H, Fallahi S, Gardner GC, Manfra MJ, Nichol JM. Adiabatic quantum state transfer in a semiconductor quantum-dot spin chain. Nat Commun 2021; 12:2156. [PMID: 33846333 PMCID: PMC8042124 DOI: 10.1038/s41467-021-22416-5] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/10/2020] [Accepted: 03/11/2021] [Indexed: 02/01/2023] Open
Abstract
Semiconductor quantum-dot spin qubits are a promising platform for quantum computation, because they are scalable and possess long coherence times. In order to realize this full potential, however, high-fidelity information transfer mechanisms are required for quantum error correction and efficient algorithms. Here, we present evidence of adiabatic quantum-state transfer in a chain of semiconductor quantum-dot electron spins. By adiabatically modifying exchange couplings, we transfer single- and two-spin states between distant electrons in less than 127 ns. We also show that this method can be cascaded for spin-state transfer in long spin chains. Based on simulations, we estimate that the probability to correctly transfer single-spin eigenstates and two-spin singlet states can exceed 0.95 for the experimental parameters studied here. In the future, state and process tomography will be required to verify the transfer of arbitrary single qubit states with a fidelity exceeding the classical bound. Adiabatic quantum-state transfer is robust to noise and pulse-timing errors. This method will be useful for initialization, state distribution, and readout in large spin-qubit arrays for gate-based quantum computing. It also opens up the possibility of universal adiabatic quantum computing in semiconductor quantum-dot spin qubits.
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Affiliation(s)
- Yadav P. Kandel
- grid.16416.340000 0004 1936 9174Department of Physics and Astronomy, University of Rochester, Rochester, NY USA
| | - Haifeng Qiao
- grid.16416.340000 0004 1936 9174Department of Physics and Astronomy, University of Rochester, Rochester, NY USA
| | - Saeed Fallahi
- grid.169077.e0000 0004 1937 2197Department of Physics and Astronomy, Purdue University, West Lafayette, IN USA ,grid.169077.e0000 0004 1937 2197Birck Nanotechnology Center, Purdue University, West Lafayette, IN USA
| | - Geoffrey C. Gardner
- grid.169077.e0000 0004 1937 2197Birck Nanotechnology Center, Purdue University, West Lafayette, IN USA ,grid.169077.e0000 0004 1937 2197School of Materials Engineering, Purdue University, West Lafayette, IN USA
| | - Michael J. Manfra
- grid.169077.e0000 0004 1937 2197Department of Physics and Astronomy, Purdue University, West Lafayette, IN USA ,grid.169077.e0000 0004 1937 2197Birck Nanotechnology Center, Purdue University, West Lafayette, IN USA ,grid.169077.e0000 0004 1937 2197School of Materials Engineering, Purdue University, West Lafayette, IN USA ,grid.169077.e0000 0004 1937 2197School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN USA
| | - John M. Nichol
- grid.16416.340000 0004 1936 9174Department of Physics and Astronomy, University of Rochester, Rochester, NY USA
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10
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Hillier J, Ono K, Ibukuro K, Liu F, Li Z, Husain Khaled M, Nicholas Rutt H, Tomita I, Tsuchiya Y, Ishibashi K, Saito S. Probing hole spin transport of disorder quantum dots via Pauli spin-blockade in standard silicon transistors. NANOTECHNOLOGY 2021; 32:260001. [PMID: 33730707 DOI: 10.1088/1361-6528/abef91] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2020] [Accepted: 03/16/2021] [Indexed: 06/12/2023]
Abstract
Single hole transport and spin detection is achievable in standard p-type silicon transistors owing to the strong orbital quantization of disorder based quantum dots. Through the use of the well acting as a pseudo-gate, we discover the formation of a double-quantum dot system exhibiting Pauli spin-blockade and investigate the magnetic field dependence of the leakage current. This enables attributes that are key to hole spin state control to be determined, where we calculate a tunnel couplingtcof 57μeV and a short spin-orbit lengthlSOof 250 nm. The demonstrated strong spin-orbit interaction at the interface when using disorder based quantum dots supports electric-field mediated control. These results provide further motivation that a readily scalable platform such as industry standard silicon technology can be used to investigate interactions which are useful for quantum information processing.
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Affiliation(s)
- Joseph Hillier
- School of Electronics and Computer Science, University of Southampton, University Road, Southampton, SO17 1BJ, United Kingdom
| | - Keiji Ono
- Advanced Device Laboratory, RIKEN Institute, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
| | - Kouta Ibukuro
- School of Electronics and Computer Science, University of Southampton, University Road, Southampton, SO17 1BJ, United Kingdom
| | - Fayong Liu
- School of Electronics and Computer Science, University of Southampton, University Road, Southampton, SO17 1BJ, United Kingdom
| | - Zuo Li
- School of Electronics and Computer Science, University of Southampton, University Road, Southampton, SO17 1BJ, United Kingdom
| | - Muhammad Husain Khaled
- School of Electronics and Computer Science, University of Southampton, University Road, Southampton, SO17 1BJ, United Kingdom
| | - Harvey Nicholas Rutt
- School of Electronics and Computer Science, University of Southampton, University Road, Southampton, SO17 1BJ, United Kingdom
| | - Isao Tomita
- Department of Electrical and Computer Engineering, National Institute of Technology, Gifu college, 2236-2 Kamimakuwa, Motosu, Gifu, 501-0495, Japan
| | - Yoshishige Tsuchiya
- School of Electronics and Computer Science, University of Southampton, University Road, Southampton, SO17 1BJ, United Kingdom
| | - Koji Ishibashi
- Advanced Device Laboratory, RIKEN Institute, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
| | - Shinichi Saito
- School of Electronics and Computer Science, University of Southampton, University Road, Southampton, SO17 1BJ, United Kingdom
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11
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Kranz L, Gorman SK, Thorgrimsson B, He Y, Keith D, Keizer JG, Simmons MY. Exploiting a Single-Crystal Environment to Minimize the Charge Noise on Qubits in Silicon. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2003361. [PMID: 32830388 DOI: 10.1002/adma.202003361] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2020] [Revised: 07/22/2020] [Accepted: 07/27/2020] [Indexed: 06/11/2023]
Abstract
Electron spins in silicon offer a competitive, scalable quantum-computing platform with excellent single-qubit properties. However, the two-qubit gate fidelities achieved so far have fallen short of the 99% threshold required for large-scale error-corrected quantum computing architectures. In the past few years, there has been a growing realization that the critical obstacle in meeting this threshold in semiconductor qubits is charge noise arising from the qubit environment. In this work, a notably low level of charge noise of S0 = 0.0088 ± 0.0004 μeV2 Hz-1 is demonstrated using atom qubits in crystalline silicon, achieved by separating the qubits from surfaces and interface states. The charge noise is measured using both a single electron transistor and an exchange-coupled qubit pair that collectively provide a consistent charge noise spectrum over four frequency decades, with the noise level S0 being an order of magnitude lower than previously reported. Low-frequency detuning noise, set by the total measurement time, is shown to be the dominant dephasing source of two-qubit exchange oscillations. With recent advances in fast (≈μs) single-shot readout, it is shown that by reducing the total measurement time to ≈1 s, 99.99% two-qubit S W A P gate fidelities can be achieved in single-crystal atom qubits in silicon.
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Affiliation(s)
- Ludwik Kranz
- Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
- Silicon Quantum Computing Pty Ltd., Level 2, Newton Building, UNSW Sydney, Kensington, NSW, 2052, Australia
| | - Samuel Keith Gorman
- Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
- Silicon Quantum Computing Pty Ltd., Level 2, Newton Building, UNSW Sydney, Kensington, NSW, 2052, Australia
| | - Brandur Thorgrimsson
- Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
- Silicon Quantum Computing Pty Ltd., Level 2, Newton Building, UNSW Sydney, Kensington, NSW, 2052, Australia
| | - Yu He
- Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Daniel Keith
- Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
| | - Joris Gerhard Keizer
- Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
- Silicon Quantum Computing Pty Ltd., Level 2, Newton Building, UNSW Sydney, Kensington, NSW, 2052, Australia
| | - Michelle Yvonne Simmons
- Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, NSW, 2052, Australia
- Silicon Quantum Computing Pty Ltd., Level 2, Newton Building, UNSW Sydney, Kensington, NSW, 2052, Australia
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12
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Zhu XY, Tu T, Guo AL, Zhou ZQ, Guo GC, Li CF. Spin-photon module for scalable network architecture in quantum dots. Sci Rep 2020; 10:5063. [PMID: 32193481 PMCID: PMC7081348 DOI: 10.1038/s41598-020-61976-2] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/03/2019] [Accepted: 03/05/2020] [Indexed: 11/13/2022] Open
Abstract
Reliable information transmission between spatially separated nodes is fundamental to a network architecture for scalable quantum technology. Spin qubit in semiconductor quantum dots is a promising candidate for quantum information processing. However, there remains a challenge to design a practical path from the existing experiments to scalable quantum processor. Here we propose a module consisting of spin singlet-triplet qubits and single microwave photons. We show a high degree of control over interactions between the spin qubit and the quantum light field can be achieved. Furthermore, we propose preparation of a shaped single photons with an efficiency of 98%, and deterministic quantum state transfer and entanglement generation between remote nodes with a high fidelity of 90%. This spin-photon module has met the threshold of particular designed error-correction protocols, thus provides a feasible approach towards scalable quantum network architecture.
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Affiliation(s)
- Xing-Yu Zhu
- Key Laboratory of Quantum Information, University of Science and Technology of China, Chinese Academy of Sciences, Hefei, 230026, P.R. China
| | - Tao Tu
- Key Laboratory of Quantum Information, University of Science and Technology of China, Chinese Academy of Sciences, Hefei, 230026, P.R. China. .,Department of Physics and Astronomy, University of California at Los Angeles, California, 90095, USA.
| | - Ao-Lin Guo
- Department of Physics and Astronomy, University of California at Los Angeles, California, 90095, USA
| | - Zong-Quan Zhou
- Key Laboratory of Quantum Information, University of Science and Technology of China, Chinese Academy of Sciences, Hefei, 230026, P.R. China.
| | - Guang-Can Guo
- Key Laboratory of Quantum Information, University of Science and Technology of China, Chinese Academy of Sciences, Hefei, 230026, P.R. China
| | - Chuan-Feng Li
- Key Laboratory of Quantum Information, University of Science and Technology of China, Chinese Academy of Sciences, Hefei, 230026, P.R. China.
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13
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Enhancing the dipolar coupling of a S-T 0 qubit with a transverse sweet spot. Nat Commun 2019; 10:5641. [PMID: 31822678 PMCID: PMC6904552 DOI: 10.1038/s41467-019-13548-w] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/15/2019] [Accepted: 11/12/2019] [Indexed: 11/15/2022] Open
Abstract
A fundamental challenge for quantum dot spin qubits is to extend the strength and range of qubit interactions while suppressing their coupling to the environment, since both effects have electrical origins. Key tools include the ability to take advantage of physical resources in different regimes, and to access optimal working points, sweet spots, where dephasing is minimized. Here, we explore an important resource for singlet-triplet qubits: a transverse sweet spot (TSS) that enables transitions between qubit states, a strong dipolar coupling, and leading-order protection from electrical fluctuations. Of particular interest is the possibility of transitioning between the TSS and symmetric operating points while remaining continuously protected. This arrangement is ideal for coupling qubits to a microwave cavity, because it combines tunability of the coupling with noise insensitivity. We perform simulations with \documentclass[12pt]{minimal}
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\begin{document}$$1/f$$\end{document}1∕f-type electrical noise, demonstrating that two-qubit gates mediated by a resonator can achieve fidelities >99% under realistic conditions. Semiconductor quantum dots are controlled by external fields that are tuned in order to optimise for information storage or inter-qubit interaction. Here the authors identify a working point for long-range interactions that can be reached with continuous protection from environmental noise.
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14
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Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures. Sci Rep 2019; 9:16976. [PMID: 31740683 PMCID: PMC6861249 DOI: 10.1038/s41598-019-52868-1] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/07/2019] [Accepted: 09/29/2019] [Indexed: 11/30/2022] Open
Abstract
High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit is amplified before noise sources are introduced and room-temperature amplifiers can operate at lower gain and higher BW. We compare the performance of two cryogenic amplification circuits: a current-biased heterojunction bipolar transistor circuit (CB-HBT), and an AC-coupled HBT circuit (AC-HBT). Both circuits are mounted on the mixing-chamber stage of a dilution refrigerator and are connected to silicon metal oxide semiconductor (Si-MOS) quantum dot devices on a printed circuit board (PCB). The power dissipated by the CB-HBT ranges from 0.1 to 1 μW whereas the power of the AC-HBT ranges from 1 to 20 μW. Referred to the input, the noise spectral density is low for both circuits, in the 15 to 30 fA/\documentclass[12pt]{minimal}
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\begin{document}$$\sqrt{{\bf{Hz}}}$$\end{document}Hz range. The charge sensitivity for the CB-HBT and AC-HBT is 330 μe/\documentclass[12pt]{minimal}
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\begin{document}$$\sqrt{{\bf{Hz}}}$$\end{document}Hz and 400 μe/\documentclass[12pt]{minimal}
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\begin{document}$$\sqrt{{\bf{Hz}}}$$\end{document}Hz, respectively. For the single-shot readout performed, less than 10 μs is required for both circuits to achieve bit error rates below 10−3, which is a putative threshold for quantum error correction.
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15
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Penthorn NE, Schoenfield JS, Rooney JD, Jiang H. Reduction of charge impurities in a silicon metal-oxide-semiconductor quantum dot qubit device patterned with nano-imprint lithography. NANOTECHNOLOGY 2019; 30:465302. [PMID: 31426049 DOI: 10.1088/1361-6528/ab3cb9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The silicon metal-oxide-semiconductor quantum dot architecture is a leading approach for the physical implementation of semiconductor quantum computing. One major challenge for scalable quantum dots is the presence of charge impurities. Electron-beam lithography (EBL), almost universally used to fabricate quantum dot devices, is known to create such defects at the Si/SiO2 interface. To eliminate the need for EBL, we have transferred the metal gate pattern of a quantum dot onto the silicon substrate using nano-imprint lithography. Critical features with 50 nm scale and separation can be dependably reproduced. By characterizing the bias-dependent charge transport through a quantum point contact barrier, the prevalence of impurities is found to be largely diminished in nano-imprinted devices when compared to similar electron-beam-written counterparts. High-quality charge transport and charge sensing of several quantum dots are obtained. Additionally, gate noise is measured with an average of 1.5 μeV Hz-1/2 equivalent to previous measurements made on devices fabricated with EBL, which suggests that the leading source of impurities produced by EBL are deep, fixed charges. This work offers a path toward reliable quantum dot operation in MOS by improving fabrication techniques to reduce charge impurities.
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Affiliation(s)
- Nicholas E Penthorn
- Department of Physics & Astronomy, University of California at Los Angeles, Los Angeles, CA 90095, United States of America
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16
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Harvey-Collard P, Jacobson NT, Bureau-Oxton C, Jock RM, Srinivasa V, Mounce AM, Ward DR, Anderson JM, Manginell RP, Wendt JR, Pluym T, Lilly MP, Luhman DR, Pioro-Ladrière M, Carroll MS. Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon. PHYSICAL REVIEW LETTERS 2019; 122:217702. [PMID: 31283344 DOI: 10.1103/physrevlett.122.217702] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/21/2018] [Revised: 02/25/2019] [Indexed: 06/09/2023]
Abstract
Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the spins of separated singlet-triplet electron pairs. We observe both intravalley and intervalley mechanisms, each dominant for [110] and [100] magnetic field orientations, respectively, that are consistent with a broken crystal symmetry model. We also observe a third spin-flip mechanism caused by tunneling between the quantum dots. This improved understanding is important for qubit uniformity, spin control and decoherence, and two-qubit gates.
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Affiliation(s)
- Patrick Harvey-Collard
- Département de physique et Institut quantique, Université de Sherbrooke, Sherbrooke (Québec) J1K 2R1, Canada
- Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
| | - N Tobias Jacobson
- Center for Computing Research, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
| | - Chloé Bureau-Oxton
- Département de physique et Institut quantique, Université de Sherbrooke, Sherbrooke (Québec) J1K 2R1, Canada
- Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
| | - Ryan M Jock
- Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
| | - Vanita Srinivasa
- Center for Computing Research, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
| | - Andrew M Mounce
- Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
| | - Daniel R Ward
- Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
| | - John M Anderson
- Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
| | | | - Joel R Wendt
- Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
| | - Tammy Pluym
- Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
| | - Michael P Lilly
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
| | - Dwight R Luhman
- Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
| | - Michel Pioro-Ladrière
- Département de physique et Institut quantique, Université de Sherbrooke, Sherbrooke (Québec) J1K 2R1, Canada
- Quantum Information Science Program, Canadian Institute for Advanced Research, Toronto (Ontario) M5G 1Z8, Canada
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17
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Zhang X, Li HO, Cao G, Xiao M, Guo GC, Guo GP. Semiconductor quantum computation. Natl Sci Rev 2019; 6:32-54. [PMID: 34691830 PMCID: PMC8291422 DOI: 10.1093/nsr/nwy153] [Citation(s) in RCA: 58] [Impact Index Per Article: 11.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/30/2018] [Revised: 11/05/2018] [Accepted: 12/18/2018] [Indexed: 11/12/2022] Open
Abstract
Semiconductors, a significant type of material in the information era, are becoming more and more powerful in the field of quantum information. In recent decades, semiconductor quantum computation was investigated thoroughly across the world and developed with a dramatically fast speed. The research varied from initialization, control and readout of qubits, to the architecture of fault-tolerant quantum computing. Here, we first introduce the basic ideas for quantum computing, and then discuss the developments of single- and two-qubit gate control in semiconductors. Up to now, the qubit initialization, control and readout can be realized with relatively high fidelity and a programmable two-qubit quantum processor has even been demonstrated. However, to further improve the qubit quality and scale it up, there are still some challenges to resolve such as the improvement of the readout method, material development and scalable designs. We discuss these issues and introduce the forefronts of progress. Finally, considering the positive trend of the research on semiconductor quantum devices and recent theoretical work on the applications of quantum computation, we anticipate that semiconductor quantum computation may develop fast and will have a huge impact on our lives in the near future.
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Affiliation(s)
- Xin Zhang
- Key Laboratory of Quantum Information, CAS, University of Science and Technology of China, Hefei 230026, China
- Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Hai-Ou Li
- Key Laboratory of Quantum Information, CAS, University of Science and Technology of China, Hefei 230026, China
- Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Gang Cao
- Key Laboratory of Quantum Information, CAS, University of Science and Technology of China, Hefei 230026, China
- Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Ming Xiao
- Key Laboratory of Quantum Information, CAS, University of Science and Technology of China, Hefei 230026, China
- Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Guang-Can Guo
- Key Laboratory of Quantum Information, CAS, University of Science and Technology of China, Hefei 230026, China
- Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Guo-Ping Guo
- Key Laboratory of Quantum Information, CAS, University of Science and Technology of China, Hefei 230026, China
- Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei 230026, China
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18
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Integrated silicon qubit platform with single-spin addressability, exchange control and single-shot singlet-triplet readout. Nat Commun 2018; 9:4370. [PMID: 30375392 PMCID: PMC6207676 DOI: 10.1038/s41467-018-06039-x] [Citation(s) in RCA: 50] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/07/2018] [Accepted: 07/27/2018] [Indexed: 11/28/2022] Open
Abstract
Silicon quantum dot spin qubits provide a promising platform for large-scale quantum computation because of their compatibility with conventional CMOS manufacturing and the long coherence times accessible using 28Si enriched material. A scalable error-corrected quantum processor, however, will require control of many qubits in parallel, while performing error detection across the constituent qubits. Spin resonance techniques are a convenient path to parallel two-axis control, while Pauli spin blockade can be used to realize local parity measurements for error detection. Despite this, silicon qubit implementations have so far focused on either single-spin resonance control, or control and measurement via voltage-pulse detuning in the two-spin singlet–triplet basis, but not both simultaneously. Here, we demonstrate an integrated device platform incorporating a silicon metal-oxide-semiconductor double quantum dot that is capable of single-spin addressing and control via electron spin resonance, combined with high-fidelity spin readout in the singlet-triplet basis. Significant progress has been made developing the different methods needed for a spin-based quantum computer but the challenge of integrating them remains. Fogarty et al. present a system with single-spin addressability, spin-spin interactions and high-fidelity readout that provides a scalable foundation for error-corrected devices.
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19
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Li R, Petit L, Franke DP, Dehollain JP, Helsen J, Steudtner M, Thomas NK, Yoscovits ZR, Singh KJ, Wehner S, Vandersypen LMK, Clarke JS, Veldhorst M. A crossbar network for silicon quantum dot qubits. SCIENCE ADVANCES 2018; 4:eaar3960. [PMID: 29984303 PMCID: PMC6035036 DOI: 10.1126/sciadv.aar3960] [Citation(s) in RCA: 51] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/08/2017] [Accepted: 05/29/2018] [Indexed: 05/31/2023]
Abstract
The spin states of single electrons in gate-defined quantum dots satisfy crucial requirements for a practical quantum computer. These include extremely long coherence times, high-fidelity quantum operation, and the ability to shuttle electrons as a mechanism for on-chip flying qubits. To increase the number of qubits to the thousands or millions of qubits needed for practical quantum information, we present an architecture based on shared control and a scalable number of lines. Crucially, the control lines define the qubit grid, such that no local components are required. Our design enables qubit coupling beyond nearest neighbors, providing prospects for nonplanar quantum error correction protocols. Fabrication is based on a three-layer design to define qubit and tunnel barrier gates. We show that a double stripline on top of the structure can drive high-fidelity single-qubit rotations. Self-aligned inhomogeneous magnetic fields induced by direct currents through superconducting gates enable qubit addressability and readout. Qubit coupling is based on the exchange interaction, and we show that parallel two-qubit gates can be performed at the detuning-noise insensitive point. While the architecture requires a high level of uniformity in the materials and critical dimensions to enable shared control, it stands out for its simplicity and provides prospects for large-scale quantum computation in the near future.
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Affiliation(s)
- Ruoyu Li
- QuTech, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
- Kavli Institute of Nanoscience, University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands
| | - Luca Petit
- QuTech, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
- Kavli Institute of Nanoscience, University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands
| | - David P. Franke
- QuTech, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
- Kavli Institute of Nanoscience, University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands
| | - Juan Pablo Dehollain
- QuTech, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
- Kavli Institute of Nanoscience, University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands
| | - Jonas Helsen
- QuTech, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
| | - Mark Steudtner
- QuTech, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
- Instituut-Lorentz, Universiteit Leiden, P.O. Box 9506, 2300 RA Leiden, Netherlands
| | - Nicole K. Thomas
- Components Research, Intel Corporation, 2501 Northwest 229th Avenue, Hillsboro, OR 97124, USA
| | - Zachary R. Yoscovits
- Components Research, Intel Corporation, 2501 Northwest 229th Avenue, Hillsboro, OR 97124, USA
| | - Kanwal J. Singh
- Components Research, Intel Corporation, 2501 Northwest 229th Avenue, Hillsboro, OR 97124, USA
| | - Stephanie Wehner
- QuTech, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
| | - Lieven M. K. Vandersypen
- QuTech, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
- Kavli Institute of Nanoscience, University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands
- Components Research, Intel Corporation, 2501 Northwest 229th Avenue, Hillsboro, OR 97124, USA
| | - James S. Clarke
- Components Research, Intel Corporation, 2501 Northwest 229th Avenue, Hillsboro, OR 97124, USA
| | - Menno Veldhorst
- QuTech, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
- Kavli Institute of Nanoscience, University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands
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20
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Hu B, Ochoa ED, Sanchez D, Perron JK, Zimmerman NM, Stewart MD. Effect of device design on charge offset drift in Si/SiO 2 single electron devices. JOURNAL OF APPLIED PHYSICS 2018; 124:10.1063/1.5048013. [PMID: 31274883 PMCID: PMC6604639 DOI: 10.1063/1.5048013] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2018] [Accepted: 09/13/2018] [Indexed: 06/09/2023]
Abstract
We have measured the low-frequency time instability known as charge offset drift of Si/SiO2 single electron devices (SEDs) with and without an overall poly-Si top gate. We find that SEDs with a poly-Si top gate have significantly less charge offset drift, exhibiting fewer isolated jumps and a factor of two reduction in fluctuations about a stable mean value. The observed reduction can be accounted for by the electrostatic reduction in the mutual capacitance Cm between defects and the quantum dot, and increase in the total defect capacitance Cd due to the top gate. These results depart from the prominent interpretation that the level of charge offset drift in SEDs is determined by the intrinsic material properties, forcing consideration of the device design as well. We expect these results to be of importance in developing SEDs for applications from quantum information to metrology or wherever charge noise or integrability of devices is a challenge.
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Affiliation(s)
- Binhui Hu
- Joint Quantum Institute, University of Maryland, College Park, Maryland 20742, USA
| | - Erick D. Ochoa
- California State University-San Marcos, San Marcos, CA 92069, USA
| | - Daniel Sanchez
- California State University-San Marcos, San Marcos, CA 92069, USA
| | - Justin K. Perron
- California State University-San Marcos, San Marcos, CA 92069, USA
| | - Neil M. Zimmerman
- National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA
| | - M. D. Stewart
- National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA
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