1
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Ding S, Liu Y, Shang Q, Gao B, Yao F, Wang B, Ma X, Zhang Z, Jin C. Morphological Evolution of Atomic Layer Deposited Hafnium Oxide on Aligned Carbon Nanotube Arrays. NANO LETTERS 2024. [PMID: 39347618 DOI: 10.1021/acs.nanolett.4c03407] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/01/2024]
Abstract
Microscopic study of the nucleation and growth of atomic layer deposition (ALD) dielectrics onto carbon nanotubes (CNTs) is an essential while challenging task toward high-performance devices. Here, we capture the morphological evolution and growth behaviors of ALD-HfO2 onto SiO2/Si-supported aligned CNT arrays (A-CNTs) under three ALD recipes via cross-sectional high-resolution scanning transmission electron microscopy. The HfO2 in ALD I (200 °C) preferentially nucleates on the SiO2 substrate in heterogeneous growth mode, resulting in films with considerable pinholes, while ALD II (90 °C) and III (90 °C and extra H2O presoak) exhibit homogeneous growth with nucleation on both SiO2 and CNTs, yielding uniform films. Arrangement defects in A-CNTs exacerbate nonuniformity of HfO2 and tube-tube separation plays deterministic roles affecting the HfO2-CNT interfacial morphology. Electrical measurements from A-CNTs metaloxide-semiconductor devices validate these findings. Our investigation contributes valuable insights for optimizing ALD processes for enhanced dielectric integration on A-CNTs in next-generation electronics.
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Affiliation(s)
- Sujuan Ding
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
- Jihua Laboratory, Foshan, Guangdong 528200, China
| | - Yifan Liu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
| | - Qian Shang
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan, Hunan 411105, China
| | - Bing Gao
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Fenfa Yao
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Bo Wang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Xiaoming Ma
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
| | - Chuanhong Jin
- State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China
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2
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Chen W, Chen A, Liu X, Shu F, Zeng J, Zhang J, Xu H, Peng G, Yang Z, Li J, Liu G. Customization of 2D Atomic-Molecular Heterojunction with Manipulatable Charge-Transfer and Band Structure. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2410097. [PMID: 39328027 DOI: 10.1002/adma.202410097] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/13/2024] [Revised: 09/16/2024] [Indexed: 09/28/2024]
Abstract
Manipulating the properties of 2D materials through meticulously engineered artificial heterojunctions holds great promise for novel device applications. However, existing research on the crucial charge-transfer interactions and energy profile regulation is predominantly focused on 2D van der Waals structures formed via weak van der Waals forces, limiting regulatory efficiency at high costs. Herein, a refined atomic-molecular heterojunction strategy featuring strong covalent bonds between organic molecule and 2D violet phosphorus (VP) atomic crystal is developed, which enables enhanced charge-transfer dynamics and customizable band structure regulation at the molecular level. Both experimentally and theoretically, it is demonstrated that grafting efficiency, charge redistribution, and energy gap regulation critically depend on organic electronegativity, providing a low-cost yet high-efficiency regulatory effect on a large scale. As a proof of concept, the novel VP-molecular heterojunctions exhibit optimized performance in diverse application domains, presenting a general platform for future high-performance device applications.
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Affiliation(s)
- Weilin Chen
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai, 200240, China
- QIANYUAN National Laboratory, Hangzhou, 310024, China
| | - An Chen
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xue Liu
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Fan Shu
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Jianmin Zeng
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Jinying Zhang
- School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Hongbo Xu
- QIANYUAN National Laboratory, Hangzhou, 310024, China
| | - Gaoliang Peng
- QIANYUAN National Laboratory, Hangzhou, 310024, China
| | - Zhi Yang
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Jinjin Li
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Gang Liu
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University, Shanghai, 200240, China
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3
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Zahoor F, Nisar A, Bature UI, Abbas H, Bashir F, Chattopadhyay A, Kaushik BK, Alzahrani A, Hussin FA. An overview of critical applications of resistive random access memory. NANOSCALE ADVANCES 2024:d4na00158c. [PMID: 39263252 PMCID: PMC11382421 DOI: 10.1039/d4na00158c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2024] [Accepted: 08/10/2024] [Indexed: 09/13/2024]
Abstract
The rapid advancement of new technologies has resulted in a surge of data, while conventional computers are nearing their computational limits. The prevalent von Neumann architecture, where processing and storage units operate independently, faces challenges such as data migration through buses, leading to decreased computing speed and increased energy loss. Ongoing research aims to enhance computing capabilities through the development of innovative chips and the adoption of new system architectures. One noteworthy advancement is Resistive Random Access Memory (RRAM), an emerging memory technology. RRAM can alter its resistance through electrical signals at both ends, retaining its state even after power-down. This technology holds promise in various areas, including logic computing, neural networks, brain-like computing, and integrated technologies combining sensing, storage, and computing. These cutting-edge technologies offer the potential to overcome the performance limitations of traditional architectures, significantly boosting computing power. This discussion explores the physical mechanisms, device structure, performance characteristics, and applications of RRAM devices. Additionally, we delve into the potential future adoption of these technologies at an industrial scale, along with prospects and upcoming research directions.
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Affiliation(s)
- Furqan Zahoor
- Department of Computer Engineering, College of Computer Sciences and Information Technology, King Faisal University Saudi Arabia
| | - Arshid Nisar
- Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee India
| | - Usman Isyaku Bature
- Department of Electrical and Electronics Engineering, Universiti Teknologi Petronas Malaysia
| | - Haider Abbas
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University Seoul 143-747 Republic of Korea
| | - Faisal Bashir
- Department of Computer Engineering, College of Computer Sciences and Information Technology, King Faisal University Saudi Arabia
| | - Anupam Chattopadhyay
- College of Computing and Data Science, Nanyang Technological University 639798 Singapore
| | - Brajesh Kumar Kaushik
- Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee India
| | - Ali Alzahrani
- Department of Computer Engineering, College of Computer Sciences and Information Technology, King Faisal University Saudi Arabia
| | - Fawnizu Azmadi Hussin
- Department of Electrical and Electronics Engineering, Universiti Teknologi Petronas Malaysia
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4
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Do DP, Bui VQ, Nguyen MC, Seo S, Do VD, Kim J, Choi J, Ko H, Yu WJ, Kawazoe Y, Lee H. Insight into Facile Ion Diffusion in Resistive Switching Medium toward Low Operating Voltage Memory. NANO LETTERS 2024; 24:7999-8007. [PMID: 38900975 DOI: 10.1021/acs.nanolett.4c01629] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/22/2024]
Abstract
The rapid increase in data storage worldwide demands a substantial amount of energy consumption annually. Studies looking at low power consumption accompanied by high-performance memory are essential for next-generation memory. Here, Graphdiyne oxide (GDYO), characterized by facile resistive switching behavior, is systematically reported toward a low switching voltage memristor. The intrinsic large, homogeneous pore-size structure in GDYO facilitates ion diffusion processes, effectively suppressing the operating voltage. The theoretical approach highlights the remarkably low diffusion energy of the Ag ion (0.11 eV) and oxygen functional group (0.6 eV) within three layers of GDYO. The Ag/GDYO/Au memristor exhibits an ultralow operating voltage of 0.25 V with a GDYO thickness of 5 nm; meanwhile, the thicker GDYO of 29 nm presents multilevel memory with an ON/OFF ratio of up to 104. The findings shed light on memory resistive switching behavior, facilitating future improvements in GDYO-based devices toward opto-memristors, artificial synapses, and neuromorphic applications.
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Affiliation(s)
- Dinh Phuc Do
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Viet Q Bui
- Advanced Institute of Science and Technology, The University of Danang, 41 Le Duan, Danang 92026, Vietnam
| | - Minh Chien Nguyen
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Sohyeon Seo
- Creative Research Institute, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Van Dam Do
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Joosung Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jungsue Choi
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hyun Ko
- Institute of Quantum Biophysics, Sungkyunkwan University, 2066 Seoburo, Jangan-gu, Suwon 16419, Korea
- Department of Biophysics, Sungkyunkwan University, Suwon 16419, South Korea
| | - Woo Jong Yu
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Yoshiyuki Kawazoe
- New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579, Japan
| | - Hyoyoung Lee
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Creative Research Institute, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Institute of Quantum Biophysics, Sungkyunkwan University, 2066 Seoburo, Jangan-gu, Suwon 16419, Korea
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5
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An H, Li Y, Ren Y, Wan Y, Wang W, Sun Z, Zhong J, Peng Z. High-performance flexible resistive random-access memory based on SnS 2 quantum dots with a charge trapping/de-trapping effect. NANOSCALE 2024; 16:12142-12148. [PMID: 38832816 DOI: 10.1039/d4nr00745j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2024]
Abstract
The application of resistive random-access memory (RRAM) in storage and neuromorphic computing has attracted widespread attention. Benefitting from the quantum effect, transition metal dichalcogenides (TMD) quantum dots (QDs) exhibit distinctive optical and electronic properties, which make them promising candidates for emerging RRAM. Here, we show a high-performance forming-free flexible RRAM based on high-quality tin disulfide (SnS2) QDs prepared by a facile liquid phase method. The RRAM device demonstrates high flexibility with a large on/off ratio of ∼106 and a long retention time of over 3 × 104 s. The excellent switching behavior of the memristor is elucidated by a charge trapping/de-trapping mechanism where the SnS2 QDs act as charge trapping centers. This study is of significance for the understanding and development of TMD QD-based flexible memristors.
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Affiliation(s)
- Hua An
- State Key Laboratory of Radio Frequency Heterogeneous Integration (Shenzhen University), School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China.
| | - Yiyang Li
- State Key Laboratory of Radio Frequency Heterogeneous Integration (Shenzhen University), School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China.
| | - Yi Ren
- State Key Laboratory of Radio Frequency Heterogeneous Integration (Shenzhen University), School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China.
| | - Yili Wan
- State Key Laboratory of Radio Frequency Heterogeneous Integration (Shenzhen University), School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China.
| | - Weigao Wang
- State Key Laboratory of Radio Frequency Heterogeneous Integration (Shenzhen University), School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China.
| | - Zhenhua Sun
- State Key Laboratory of Radio Frequency Heterogeneous Integration (Shenzhen University), School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China.
| | - Junwen Zhong
- Department of Electromechanical Engineering, University of Macau, Macau, SAR, 999078, China.
| | - Zhengchun Peng
- State Key Laboratory of Radio Frequency Heterogeneous Integration (Shenzhen University), School of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China.
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, P. R. China
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6
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Li XD, Chen NK, Wang BQ, Niu M, Xu M, Miao X, Li XB. Resistive Memory Devices at the Thinnest Limit: Progress and Challenges. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307951. [PMID: 38197585 DOI: 10.1002/adma.202307951] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/07/2023] [Revised: 12/28/2023] [Indexed: 01/11/2024]
Abstract
The Si-based integrated circuits industry has been developing for more than half a century, by focusing on the scaling-down of transistor. However, the miniaturization of transistors will soon reach its physical limits, thereby requiring novel material and device technologies. Resistive memory is a promising candidate for in-memory computing and energy-efficient synaptic devices that can satisfy the computational demands of the future applications. However, poor cycle-to-cycle and device-to-device uniformities hinder its mass production. 2D materials, as a new type of semiconductor, is successfully employed in various micro/nanoelectronic devices and have the potential to drive future innovation in resistive memory technology. This review evaluates the potential of using the thinnest advanced materials, that is, monolayer 2D materials, for memristor or memtransistor applications, including resistive switching behavior and atomic mechanism, high-frequency device performances, and in-memory computing/neuromorphic computing applications. The scaling-down advantages of promising monolayer 2D materials including graphene, transition metal dichalcogenides, and hexagonal boron nitride are presented. Finally, the technical challenges of these atomic devices for practical applications are elaborately discussed. The study of monolayer-2D-material-based resistive memory is expected to play a positive role in the exploration of beyond-Si electronic technologies.
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Affiliation(s)
- Xiao-Dong Li
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Nian-Ke Chen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Bai-Qian Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Meng Niu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Ming Xu
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Xiangshui Miao
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Xian-Bin Li
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
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7
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He L, Lang S, Zhang W, Song S, Lyu J, Gong J. First-Principles Prediction of High and Low Resistance States in Ta/h-BN/Ta Atomristor. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:612. [PMID: 38607146 PMCID: PMC11013407 DOI: 10.3390/nano14070612] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/13/2024] [Revised: 03/13/2024] [Accepted: 03/20/2024] [Indexed: 04/13/2024]
Abstract
Two-dimensional (2D) materials have received significant attention for their potential use in next-generation electronics, particularly in nonvolatile memory and neuromorphic computing. This is due to their simple metal-insulator-metal (MIM) sandwiched structure, excellent switching performance, high-density capability, and low power consumption. In this work, using comprehensive material simulations and device modeling, the thinnest monolayer hexagonal boron nitride (h-BN) atomristor is studied by using a MIM configuration with Ta electrodes. Our first-principles calculations predicted both a high resistance state (HRS) and a low resistance state (LRS) in this device. We observed that the presence of van der Waals (vdW) gaps between the Ta electrodes and monolayer h-BN with a boron vacancy (VB) contributes to the HRS. The combination of metal electrode contact and the adsorption of Ta atoms onto a single VB defect (TaB) can alter the interface barrier between the electrode and dielectric layer, as well as create band gap states within the band gap of monolayer h-BN. These band gap states can shorten the effective tunneling path for electron transport from the left electrode to the right electrode, resulting in an increase in the current transmission coefficient of the LRS. This resistive switching mechanism in monolayer h-BN atomristors can serve as a theoretical reference for device design and optimization, making them promising for the development of atomristor technology with ultra-high integration density and ultra-low power consumption.
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Affiliation(s)
- Lan He
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| | - Shuai Lang
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| | - Wei Zhang
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| | - Shun Song
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Juan Lyu
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| | - Jian Gong
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
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8
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Teja Nibhanupudi SS, Roy A, Veksler D, Coupin M, Matthews KC, Disiena M, Ansh, Singh JV, Gearba-Dolocan IR, Warner J, Kulkarni JP, Bersuker G, Banerjee SK. Ultra-fast switching memristors based on two-dimensional materials. Nat Commun 2024; 15:2334. [PMID: 38485722 PMCID: PMC10940724 DOI: 10.1038/s41467-024-46372-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/09/2023] [Accepted: 02/26/2024] [Indexed: 03/18/2024] Open
Abstract
The ability to scale two-dimensional (2D) material thickness down to a single monolayer presents a promising opportunity to realize high-speed energy-efficient memristors. Here, we report an ultra-fast memristor fabricated using atomically thin sheets of 2D hexagonal Boron Nitride, exhibiting the shortest observed switching speed (120 ps) among 2D memristors and low switching energy (2pJ). Furthermore, we study the switching dynamics of these memristors using ultra-short (120ps-3ns) voltage pulses, a frequency range that is highly relevant in the context of modern complementary metal oxide semiconductor (CMOS) circuits. We employ statistical analysis of transient characteristics to gain insights into the memristor switching mechanism. Cycling endurance data confirms the ultra-fast switching capability of these memristors, making them attractive for next generation computing, storage, and Radio-Frequency (RF) circuit applications.
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Affiliation(s)
- S S Teja Nibhanupudi
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA.
| | - Anupam Roy
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA.
- Birla Institute of Technology, Mesra, Ranchi, 835215, India.
| | | | - Matthew Coupin
- Texas Materials Institute, The University of Texas at Austin, Austin, TX, 78712, USA
| | - Kevin C Matthews
- Texas Materials Institute, The University of Texas at Austin, Austin, TX, 78712, USA
| | - Matthew Disiena
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA
| | - Ansh
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA
| | - Jatin V Singh
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA
| | | | - Jamie Warner
- Texas Materials Institute, The University of Texas at Austin, Austin, TX, 78712, USA
| | - Jaydeep P Kulkarni
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA
| | | | - Sanjay K Banerjee
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA.
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9
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Yang SJ, Liang L, Lee Y, Gu Y, Fatheema J, Kutagulla S, Kim D, Kim M, Kim S, Akinwande D. Volatile and Nonvolatile Resistive Switching Coexistence in Conductive Point Hexagonal Boron Nitride Monolayer. ACS NANO 2024; 18:3313-3322. [PMID: 38226861 DOI: 10.1021/acsnano.3c10068] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/17/2024]
Abstract
Recently, we demonstrated the nonvolatile resistive switching effects of metal-insulator-metal (MIM) atomristor structures based on two-dimensional (2D) monolayers. However, there are many remaining combinations between 2D monolayers and metal electrodes; hence, there is a need to further explore 2D resistance switching devices from material selections to future perspectives. This study investigated the volatile and nonvolatile switching coexistence of monolayer hexagonal boron nitride (h-BN) atomristors using top and bottom silver (Ag) metal electrodes. Utilizing an h-BN monolayer and Ag electrodes, we found that the transition between volatile and nonvolatile switching is attributed to the thickness/stiffness of chain-like conductive bridges between h-BN and Ag surfaces based on the current compliance and atomristor area. Computations indicate a "weak" bridge is responsible for volatile switching, while a "strong" bridge is formed for nonvolatile switching. The current compliance determines the number of Ag atoms that undergo dissociation at the electrode, while the atomristor area determines the degree of electric field localization that forms more stable conductive bridges. The findings of this study suggest that the h-BN atomristor using Ag electrodes shows promise as a potential solution to integrate both volatile neurons and nonvolatile synapses in a single neuromorphic crossbar array structure through electrical and dimensional designs.
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Affiliation(s)
- Sung Jin Yang
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Liangbo Liang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Yoonseok Lee
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea
| | - Yuqian Gu
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Jameela Fatheema
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Shanmukh Kutagulla
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Dahyeon Kim
- Department of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea
| | - Myungsoo Kim
- Department of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea
| | - Sungjun Kim
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea
| | - Deji Akinwande
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
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10
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Fernandes J, Grzonka J, Araújo G, Schulman A, Silva V, Rodrigues J, Santos J, Bondarchuk O, Ferreira P, Alpuim P, Capasso A. Bipolar Resistive Switching in 2D MoSe 2 Grown by Atmospheric Pressure Chemical Vapor Deposition. ACS APPLIED MATERIALS & INTERFACES 2024; 16:1767-1778. [PMID: 38113456 DOI: 10.1021/acsami.3c14215] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) are highly promising nanomaterials for various electronic devices such as field-effect transistors, junction diodes, tunneling devices, and, more recently, memristors. 2D MoSe2 stands out for having high electrical conductivity, charge carrier mobility, and melting point. While these features make it particularly appropriate as a switching layer in memristive devices, reliable and scalable production of large-area 2D MoSe2 still represents a challenge. In this study, we manufacture 2D MoSe2 films by atmospheric-pressure chemical vapor deposition and investigate them on the atomic scale. We selected and transferred MoSe2 bilayer to serve as a switching layer between asymmetric Au-Cu electrodes in miniaturized crossbar vertical memristors. The electrochemical metallization devices showed forming-free, bipolar resistive switching at low voltages, with clearly identifiable nonvolatile states. Other than low-power neuromorphic computing, low switching voltages approaching the range of biological action potentials could unlock hybrid biological interfaces.
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Affiliation(s)
- João Fernandes
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
| | - Justyna Grzonka
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
| | - Guilherme Araújo
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
| | - Alejandro Schulman
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
- Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland
| | - Vitor Silva
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
| | - João Rodrigues
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
| | - João Santos
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
| | | | - Paulo Ferreira
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
- Mechanical Engineering Department and IDMEC, Instituto Superior Técnico, University of Lisbon, Av. Rovisco Pais, 1049-001 Lisboa, Portugal
- Materials Science and Engineering Program, University of Texas at Austin, Austin, Texas 78712, United States
| | - Pedro Alpuim
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
- Centro de Física das Universidades do Minho e do Porto, Universidade do Minho, 4710-057 Braga, Portugal
| | - Andrea Capasso
- International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
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11
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Saha P, Sahad E M, Sathyanarayana S, Das BC. Solution-Processed Robust Multifunctional Memristor of 2D Layered Material Thin Film. ACS NANO 2024; 18:1137-1148. [PMID: 38127715 DOI: 10.1021/acsnano.3c10775] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/23/2023]
Abstract
Memristors have gained significant attention recently due to their unique ability to exhibit functionalities for brain-inspired neuromorphic computing. Here, we demonstrate a high-performance multifunctional memristor using a thin film of liquid-phase exfoliated (LPE) 2D MoS2 pinched between two electrodes. Nanoscale inspection of a solution-processed MoS2 thin film using scanning electron and scanning probe microscopies revealed the high-quality and defect-free nature. Systematic current-voltage (I-V) characterizations depict a facile, nonvolatile resistive switching behavior of our 2D MoS2 thin film device with a current On/Off ratio of 103 and energy cost of only a few picojoules. Excellent performance metrics, including at least 103 cycle endurance, 104 s retention, and switching speed down to a few nanoseconds, reflect robust high-performance data storage capability. Charge carriers trapping and detrapping at the sulfur vacancy defect sites in MoS2 nanosheets mainly display the resistive switching property, supported by the impedance analysis and theoretical fitting results. Multifunctionality is leveraged through implementing two-input logic gate operations, edge computation, and crucial adaptive learning via a Pavlov's dogs experiment. Overall, our solution-processed MoS2 memristor has the potential for tremendous future opportunities in integrated circuits and different computing paradigms, including energy-efficient neuromorphic computing hardware in artificial intelligence.
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Affiliation(s)
- Puranjay Saha
- eNDR Laboratory, School of Physics, IISER Thiruvananthapuram, Trivandrum 695551, Kerala, India
| | - Muhammed Sahad E
- eNDR Laboratory, School of Physics, IISER Thiruvananthapuram, Trivandrum 695551, Kerala, India
| | - Sandaap Sathyanarayana
- eNDR Laboratory, School of Physics, IISER Thiruvananthapuram, Trivandrum 695551, Kerala, India
| | - Bikas C Das
- eNDR Laboratory, School of Physics, IISER Thiruvananthapuram, Trivandrum 695551, Kerala, India
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12
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Tugchin BN, Doolaard N, Barreda AI, Zhang Z, Romashkina A, Fasold S, Staude I, Eilenberger F, Pertsch T. Photoluminescence Enhancement of Monolayer WS 2 by n-Doping with an Optically Excited Gold Disk. NANO LETTERS 2023; 23:10848-10855. [PMID: 37967849 PMCID: PMC10723068 DOI: 10.1021/acs.nanolett.3c03053] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/14/2023] [Revised: 10/08/2023] [Indexed: 11/17/2023]
Abstract
In nanophotonics and quantum optics, we aim to control and manipulate light with tailored nanoscale structures. Hybrid systems of nanostructures and atomically thin materials are of interest here, as they offer rich physics and versatility due to the interaction between photons, plasmons, phonons, and excitons. In this study, we explore the optical and electronic properties of a hybrid system, a naturally n-doped monolayer WS2 covering a gold disk. We demonstrate that the nonresonant excitation of the gold disk in the high absorption regime efficiently generates hot carriers via localized surface plasmon excitation, which n-dope the monolayer WS2 and enhance the photoluminescence emission by regulating the multiexciton population and stabilizing the neutral exciton emission. The results are relevant to the further development of nanotransistors in photonic circuits and optoelectronic applications.
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Affiliation(s)
- Bayarjargal N. Tugchin
- Institute
of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Straße 6, 07745 Jena, Germany
| | - Nathan Doolaard
- Institute
of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Straße 6, 07745 Jena, Germany
| | - Angela I. Barreda
- Institute
of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Straße 6, 07745 Jena, Germany
- Institute
of Solid State Physics, Friedrich Schiller
University Jena, Max-Wien-Platz 1, 07743 Jena, Germany
- Group
of Displays and Photonics Applications, Carlos III University of Madrid, Avda. de la Universidad, 30, Leganés, 28911 Madrid, Spain
| | - Zifei Zhang
- Institute
of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Straße 6, 07745 Jena, Germany
| | - Anastasia Romashkina
- Institute
of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Straße 6, 07745 Jena, Germany
| | - Stefan Fasold
- Institute
of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Straße 6, 07745 Jena, Germany
- Vistec
Electron Beam GmbH, 07743 Jena, Germany
| | - Isabelle Staude
- Institute
of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Straße 6, 07745 Jena, Germany
- Institute
of Solid State Physics, Friedrich Schiller
University Jena, Max-Wien-Platz 1, 07743 Jena, Germany
| | - Falk Eilenberger
- Institute
of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Straße 6, 07745 Jena, Germany
- Fraunhofer-Institute
for Applied Optics and Precision Engineering IOF, Albert-Einstein-Straße 7, 07745 Jena, Germany
| | - Thomas Pertsch
- Institute
of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Straße 6, 07745 Jena, Germany
- Fraunhofer-Institute
for Applied Optics and Precision Engineering IOF, Albert-Einstein-Straße 7, 07745 Jena, Germany
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13
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Niu Y, Li L, Qi Z, Aung HH, Han X, Tenne R, Yao Y, Zak A, Guo Y. 0D van der Waals interfacial ferroelectricity. Nat Commun 2023; 14:5578. [PMID: 37907466 PMCID: PMC10618478 DOI: 10.1038/s41467-023-41045-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/26/2023] [Accepted: 08/21/2023] [Indexed: 11/02/2023] Open
Abstract
The dimensional limit of ferroelectricity has been long explored. The critical contravention is that the downscaling of ferroelectricity leads to a loss of polarization. This work demonstrates a zero-dimensional ferroelectricity by the atomic sliding at the restrained van der Waals interface of crossed tungsten disufilde nanotubes. The developed zero-dimensional ferroelectric diode in this work presents not only non-volatile resistive memory, but also the programmable photovoltaic effect at the visible band. Benefiting from the intrinsic dimensional limitation, the zero-dimensional ferroelectric diode allows electrical operation at an ultra-low current. By breaking through the critical size of depolarization, this work demonstrates the ultimately downscaled interfacial ferroelectricity of zero-dimensional, and contributes to a branch of devices that integrates zero-dimensional ferroelectric memory, nano electro-mechanical system, and programmable photovoltaics in one.
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Affiliation(s)
- Yue Niu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Lei Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Zhiying Qi
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Hein Htet Aung
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Xinyi Han
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Reshef Tenne
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, 7610001, Rehovot, Israel
| | - Yugui Yao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Alla Zak
- Faculty of Sciences, Holon Institute of Technology, 52 Golomb Street, 5810201, Holon, Israel
| | - Yao Guo
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China.
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China.
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14
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Boschetto G, Carapezzi S, Todri-Sanial A. Non-volatile resistive switching mechanism in single-layer MoS 2 memristors: insights from ab initio modelling of Au and MoS 2 interfaces. NANOSCALE ADVANCES 2023; 5:4203-4212. [PMID: 37560426 PMCID: PMC10408618 DOI: 10.1039/d3na00045a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/19/2023] [Accepted: 07/18/2023] [Indexed: 08/11/2023]
Abstract
Non-volatile memristive devices based on two-dimensional (2D) layered materials provide an attractive alternative to conventional flash memory chips. Single-layer semiconductors, such as monolayer molybdenum disulphide (ML-MoS2), enable the aggressive downscaling of devices towards greater system integration density. The "atomristor", the most compact device to date, has been shown to undergo a resistive switching between its high-resistance (HRS) and low-resistance (LRS) states of several orders of magnitude. The main hypothesis behind its working mechanism relies on the migration of sulphur vacancies in the proximity of the metal contact during device operation, thus inducing the variation of the Schottky barrier at the metal-semiconductor interface. However, the interface physics is not yet fully understood: other hypotheses were proposed, involving the migration of metal atoms from the electrode. In this work, we aim to elucidate the mechanism of the resistive switching in the atomristor. We carry out density functional theory (DFT) simulations on model Au and ML-MoS2 interfaces with and without the presence of point defects, either vacancies or substitutions. To construct realistic interfaces, we combine DFT with Green's function surface simulations. Our findings reveal that it is not the mere presence of S vacancies but rather the migration of Au atoms from the electrode to MoS2 that modulate the interface barrier. Indeed, Au atoms act as conductive "bridges", thus facilitating the flow of charge between the two materials.
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Affiliation(s)
- Gabriele Boschetto
- Laboratory of Computer Science, Robotics, and Microelectronics, University of Montpellier, CNRS 161 Rue Ada 34095 Montpellier France
| | - Stefania Carapezzi
- Laboratory of Computer Science, Robotics, and Microelectronics, University of Montpellier, CNRS 161 Rue Ada 34095 Montpellier France
| | - Aida Todri-Sanial
- Laboratory of Computer Science, Robotics, and Microelectronics, University of Montpellier, CNRS 161 Rue Ada 34095 Montpellier France
- Department of Electrical Engineering, Eindhoven University of Technology Groene Loper 3 5612 AE Eindhoven Netherlands
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15
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Ma Z, Chen W, Cao X, Diao S, Liu Z, Ge J, Pan S. Criticality and Neuromorphic Sensing in a Single Memristor. NANO LETTERS 2023. [PMID: 37326403 DOI: 10.1021/acs.nanolett.3c00389] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Resistive random access memory (RRAM) is an important technology for both data storage and neuromorphic computation, where the dynamics of nanoscale conductive filaments lies at the core of the technology. Here, we analyze the current noise of various silicon-based memristors that involves the creation of a percolation path at the intermediate phase of filament growth. Remarkably, we find that these atomic switching events follow scale-free avalanche dynamics with exponents satisfying the criteria for criticality. We further prove that the switching dynamics are universal and show little dependence on device sizes or material features. Utilizing criticality in memristors, we simulate the functionality of hair cells in auditory sensory systems by observing the frequency selectivity of input stimuli with tunable characteristic frequency. We further demonstrate a single-memristor-based sensing primitive for representation of input stimuli that exceeds the theoretical limits dictated by the Nyquist-Shannon theorem.
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Affiliation(s)
- Zelin Ma
- Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Guangzhou 510555, China
- Solid State Physics & Material Research Laboratory, School of Physics and Material Science, Guangzhou University, Guangzhou 510006, China
| | - Wanjun Chen
- Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Guangzhou 510555, China
- Solid State Physics & Material Research Laboratory, School of Physics and Material Science, Guangzhou University, Guangzhou 510006, China
| | - Xucheng Cao
- Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Guangzhou 510555, China
- Solid State Physics & Material Research Laboratory, School of Physics and Material Science, Guangzhou University, Guangzhou 510006, China
| | - Shanqing Diao
- Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Guangzhou 510555, China
- Solid State Physics & Material Research Laboratory, School of Physics and Material Science, Guangzhou University, Guangzhou 510006, China
| | - Zhiyu Liu
- Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Guangzhou 510555, China
- Solid State Physics & Material Research Laboratory, School of Physics and Material Science, Guangzhou University, Guangzhou 510006, China
| | - Jun Ge
- Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Guangzhou 510555, China
- Solid State Physics & Material Research Laboratory, School of Physics and Material Science, Guangzhou University, Guangzhou 510006, China
- Key Lab of Si-based Information Materials & Devices and Integrated Circuits Design, Department of Education of Guangdong Province, Guangzhou 510006, China
| | - Shusheng Pan
- Research Center for Advanced Information Materials (CAIM), Huangpu Research & Graduate School of Guangzhou University, Guangzhou 510555, China
- Solid State Physics & Material Research Laboratory, School of Physics and Material Science, Guangzhou University, Guangzhou 510006, China
- Key Lab of Si-based Information Materials & Devices and Integrated Circuits Design, Department of Education of Guangdong Province, Guangzhou 510006, China
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16
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Bajwa R, Saleh H, Shojaeian M, Tekin I, Yapici MK. Nonlinear restructuring of patterned thin films by residual stress engineering into out-of-plane wavy-shaped electrostatic microactuators for high-performance radio-frequency switches. MICROSYSTEMS & NANOENGINEERING 2023; 9:74. [PMID: 37303832 PMCID: PMC10247711 DOI: 10.1038/s41378-023-00549-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/25/2022] [Revised: 03/23/2023] [Accepted: 04/27/2023] [Indexed: 06/13/2023]
Abstract
Electrostatic microelectromechanical (MEMS) switches are the basic building blocks for various radio-frequency (RF) transceivers. However, conventional cantilever-based designs of MEMS switches require a large actuation voltage, exhibit limited RF performance, and suffer from many performance tradeoffs due to their flat geometries restricted in two dimensions (2D). Here, by leveraging the residual stress in thin films, we report a novel development of three-dimensional (3D) wavy microstructures, which offer the potential to serve as high-performance RF switches. Relying on standard IC-compatible metallic materials, we devise a simple fabrication process to repeatedly manufacture out-of-plane wavy beams with controllable bending profiles and yields reaching 100%. We then demonstrate the utility of such metallic wavy beams as RF switches achieving both extremely low actuation voltage and improved RF performance owing to their unique geometry, which is tunable in three dimensions and exceeds the capabilities of current state-of-the-art flat-cantilever switches with 2D-restricted topology. As such, the wavy cantilever switch presented in this work actuates at voltages as low as 24 V while simultaneously exhibiting RF isolation and insertion loss of 20 dB and 0.75 dB, respectively, for frequencies up to 40 GHz. Wavy switch designs with 3D geometries break through the design limits set by traditional flat cantilevers and provide an additional degree of freedom or control knob in the switch design process, which could enable further optimization of switching networks used in current 5G and upcoming 6G communication scenarios.
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Affiliation(s)
- Rayan Bajwa
- Faculty of Engineering and Natural Sciences, Sabanci University, 34956 Istanbul, Turkey
| | - Heba Saleh
- Faculty of Engineering and Natural Sciences, Sabanci University, 34956 Istanbul, Turkey
| | - Milad Shojaeian
- Faculty of Engineering and Natural Sciences, Sabanci University, 34956 Istanbul, Turkey
| | - Ibrahim Tekin
- Faculty of Engineering and Natural Sciences, Sabanci University, 34956 Istanbul, Turkey
| | - Murat Kaya Yapici
- Faculty of Engineering and Natural Sciences, Sabanci University, 34956 Istanbul, Turkey
- Sabanci University SUNUM Nanotechnology Research Center, 34956 Istanbul, Turkey
- Department of Electrical Engineering, University of Washington, 98195 Seattle, WA USA
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17
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Wang C, Shi G, Qiao F, Lin R, Wu S, Hu Z. Research progress in architecture and application of RRAM with computing-in-memory. NANOSCALE ADVANCES 2023; 5:1559-1573. [PMID: 36926563 PMCID: PMC10012847 DOI: 10.1039/d3na00025g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/11/2023] [Accepted: 02/04/2023] [Indexed: 06/18/2023]
Abstract
The development of new technologies has led to an explosion of data, while the computation ability of traditional computers is approaching its upper limit. The dominant system architecture is the von Neumann architecture, with the processing and storage units working independently. The data migrate between them via buses, reducing computing speed and increasing energy loss. Research is underway to increase computing power, such as developing new chips and adopting new system architectures. Computing-in-memory (CIM) technology allows data to be computed directly on the memory, changing the current computation-centric architecture and designing a new storage-centric architecture. Resistive random access memory (RRAM) is one of the advanced memories which has appeared in recent years. RRAM can change its resistance with electrical signals at both ends, and the state will be preserved after power-down. It has potential in logic computing, neural networks, brain-like computing, and fused technology of sense-storage-computing. These advanced technologies promise to break the performance bottleneck of traditional architectures and dramatically increase computing power. This paper introduces the basic concepts of computing-in-memory technology and the principle and applications of RRAM and finally gives a conclusion about these new technologies.
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Affiliation(s)
- Chenyu Wang
- College of Mechanical and Electrical Engineering, China Jiliang University Hangzhou China
| | - Ge Shi
- College of Mechanical and Electrical Engineering, China Jiliang University Hangzhou China
| | - Fei Qiao
- Dept of Electronic Engineering, Tsinghua University Beijing 310018 People's Republic of China
| | - Rubin Lin
- College of Mechanical and Electrical Engineering, China Jiliang University Hangzhou China
| | - Shien Wu
- College of Mechanical and Electrical Engineering, China Jiliang University Hangzhou China
| | - Zenan Hu
- College of Mechanical and Electrical Engineering, China Jiliang University Hangzhou China
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18
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Symonowicz J, Polyushkin D, Mueller T, Di Martino G. Fully Optical in Operando Investigation of Ambient Condition Electrical Switching in MoS 2 Nanodevices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209968. [PMID: 36539947 DOI: 10.1002/adma.202209968] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2022] [Revised: 12/04/2022] [Indexed: 06/17/2023]
Abstract
MoS2 nanoswitches have shown superb ultralow switching energies without excessive leakage currents. However, the debate about the origin and volatility of electrical switching is unresolved due to the lack of adequate nanoimaging of devices in operando. Here, three optical techniques are combined to perform the first noninvasive in situ characterization of nanosized MoS2 devices. This study reveals volatile threshold resistive switching due to the intercalation of metallic atoms from electrodes directly between Mo and S atoms, without the assistance of sulfur vacancies. A "semi-memristive" effect driven by an organic adlayer adjacent to MoS2 is observed, which suggests that nonvolatility can be achieved by careful interface engineering. These findings provide a crucial understanding of nanoprocess in vertically biased MoS2 nanosheets, which opens new routes to conscious engineering and optimization of 2D electronics.
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Affiliation(s)
- Joanna Symonowicz
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge, CB3 0FS, UK
| | - Dmitry Polyushkin
- Vienna University of Technology, Institute of Photonics, Gusshausstrasse 27-29 / 387, Vienna, 1040, Austria
| | - Thomas Mueller
- Vienna University of Technology, Institute of Photonics, Gusshausstrasse 27-29 / 387, Vienna, 1040, Austria
| | - Giuliana Di Martino
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Rd, Cambridge, CB3 0FS, UK
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19
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Yang SJ, Dahan MM, Levit O, Makal F, Peterson P, Alikpala J, Nibhanupudi ST, Luth CJ, Banerjee SK, Kim M, Roessler A, Yalon E, Akinwande D. Reconfigurable Low-Voltage Hexagonal Boron Nitride Nonvolatile Switches for Millimeter-Wave Wireless Communications. NANO LETTERS 2023; 23:1152-1158. [PMID: 36662611 DOI: 10.1021/acs.nanolett.2c03565] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Recently, nonvolatile resistive switching memory effects have been actively studied in two-dimensional (2D) transition metal dichalcogenides and boron nitrides to advance future memory and neuromorphic computing applications. Here, we report on radiofrequency (RF) switches utilizing hexagonal boron nitride (h-BN) memristors that afford operation in the millimeter-wave (mmWave) range. Notably, silver (Ag) electrodes to h-BN offer outstanding nonvolatile bipolar resistive switching characteristics with a high ON/OFF switching ratio of 1011 and low switching voltage below 0.34 V. In addition, the switch exhibits a low insertion loss of 0.50 dB and high isolation of 23 dB across the D-band spectrum (110 to 170 GHz). Furthermore, the S21 insertion loss can be tuned through five orders of current compliance magnitude, which increases the application prospects for atomic switches. These results can enable the switch to become a key component for future reconfigurable wireless and 6G communication systems.
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Affiliation(s)
- Sung Jin Yang
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Mor Mordechai Dahan
- Viterbi Faculty of Electrical & Computer Engineering, Technion - Israel Institute of Technology, Haifa 32000, Israel
| | - Or Levit
- Viterbi Faculty of Electrical & Computer Engineering, Technion - Israel Institute of Technology, Haifa 32000, Israel
| | - Frank Makal
- Rohde&Schwarz USA, Inc., Columbia, Maryland 21046, United States
| | - Paul Peterson
- Rohde&Schwarz USA, Inc., Columbia, Maryland 21046, United States
| | - Jason Alikpala
- FormFactor, Inc., Livermore, California 94551, United States
| | - Ss Teja Nibhanupudi
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Christopher J Luth
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Sanjay K Banerjee
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Myungsoo Kim
- Department of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea
| | - Andreas Roessler
- Rohde&Schwarz USA, Inc., Columbia, Maryland 21046, United States
| | - Eilam Yalon
- Viterbi Faculty of Electrical & Computer Engineering, Technion - Israel Institute of Technology, Haifa 32000, Israel
| | - Deji Akinwande
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
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20
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Samizadeh Nikoo M, Matioli E. Electronic metadevices for terahertz applications. Nature 2023; 614:451-455. [PMID: 36792737 DOI: 10.1038/s41586-022-05595-z] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/26/2021] [Accepted: 11/24/2022] [Indexed: 02/17/2023]
Abstract
The evolution of electronics has largely relied on downscaling to meet the continuous needs for faster and highly integrated devices1. As the channel length is reduced, however, classic electronic devices face fundamental issues that hinder exploiting materials to their full potential and, ultimately, further miniaturization2. For example, the carrier injection through tunnelling junctions dominates the channel resistance3, whereas the high parasitic capacitances drastically limit the maximum operating frequency4. In addition, these ultra-scaled devices can only hold a few volts due to the extremely high electric fields, which limits their maximum delivered power5,6. Here we challenge such traditional limitations and propose the concept of electronic metadevices, in which the microscopic manipulation of radiofrequency fields results in extraordinary electronic properties. The devices operate on the basis of electrostatic control of collective electromagnetic interactions at deep subwavelength scales, as an alternative to controlling the flow of electrons in traditional devices, such as diodes and transistors. This enables a new class of electronic devices with cutoff frequency figure-of-merit well beyond ten terahertz, record high conductance values, extremely high breakdown voltages and picosecond switching speeds. This work sets the stage for the next generation of ultrafast semiconductor devices and presents a new paradigm that potentially bridges the gap between electronics and optics.
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Affiliation(s)
- Mohammad Samizadeh Nikoo
- Power and Wide-Band-Gap Electronics Research Laboratory (POWERlab), Institute of Electrical and Micro Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.
- Integrated Systems Laboratory, ETH Zurich, Zurich, Switzerland.
| | - Elison Matioli
- Power and Wide-Band-Gap Electronics Research Laboratory (POWERlab), Institute of Electrical and Micro Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.
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21
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Moon S, Kim J, Park J, Im S, Kim J, Hwang I, Kim JK. Hexagonal Boron Nitride for Next-Generation Photonics and Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2204161. [PMID: 35735090 DOI: 10.1002/adma.202204161] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/09/2022] [Revised: 06/14/2022] [Indexed: 06/15/2023]
Abstract
Hexagonal boron nitride (h-BN), an insulating 2D layered material, has recently attracted tremendous interest motivated by the extraordinary properties it shows across the fields of optoelectronics, quantum optics, and electronics, being exotic material platforms for various applications. At an early stage of h-BN research, it is explored as an ideal substrate and insulating layers for other 2D materials due to its atomically flat surface that is free of dangling bonds and charged impurities, and its high thermal conductivity. Recent discoveries of structural and optical properties of h-BN have expanded potential applications into emerging electronics and photonics fields. h-BN shows a very efficient deep-ultraviolet band-edge emission despite its indirect-bandgap nature, as well as stable room-temperature single-photon emission over a wide wavelength range, showing a great potential for next-generation photonics. In addition, h-BN is extensively being adopted as active media for low-energy electronics, including nonvolatile resistive switching memory, radio-frequency devices, and low-dielectric-constant materials for next-generation electronics.
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Affiliation(s)
- Seokho Moon
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jiye Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jeonghyeon Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Semi Im
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jawon Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Inyong Hwang
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jong Kyu Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
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22
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Xue F, Zhang C, Ma Y, Wen Y, He X, Yu B, Zhang X. Integrated Memory Devices Based on 2D Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201880. [PMID: 35557021 DOI: 10.1002/adma.202201880] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/27/2022] [Revised: 05/07/2022] [Indexed: 06/15/2023]
Abstract
With the advent of the Internet of Things and big data, massive data must be rapidly processed and stored within a short timeframe. This imposes stringent requirements on memory hardware implementation in terms of operation speed, energy consumption, and integration density. To fulfill these demands, 2D materials, which are excellent electronic building blocks, provide numerous possibilities for developing advanced memory device arrays with high performance, smart computing architectures, and desirable downscaling. Over the past few years, 2D-material-based memory-device arrays with different working mechanisms, including defects, filaments, charges, ferroelectricity, and spins, have been increasingly developed. These arrays can be used to implement brain-inspired computing or sensing with extraordinary performance, architectures, and functionalities. Here, recent research into integrated, state-of-the-art memory devices made from 2D materials, as well as their implications for brain-inspired computing are surveyed. The existing challenges at the array level are discussed, and the scope for future research is presented.
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Affiliation(s)
- Fei Xue
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, 310020, P. R. China
- School of Micro-Nano Electronics, Zhejiang University, Hangzhou, 311200, P. R. China
| | - Chenhui Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yinchang Ma
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yan Wen
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Xin He
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Bin Yu
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, 310020, P. R. China
- School of Micro-Nano Electronics, Zhejiang University, Hangzhou, 311200, P. R. China
| | - Xixiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
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23
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Wang S, Liu X, Xu M, Liu L, Yang D, Zhou P. Two-dimensional devices and integration towards the silicon lines. NATURE MATERIALS 2022; 21:1225-1239. [PMID: 36284239 DOI: 10.1038/s41563-022-01383-2] [Citation(s) in RCA: 58] [Impact Index Per Article: 29.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/08/2022] [Accepted: 09/14/2022] [Indexed: 06/16/2023]
Abstract
Despite technical efforts and upgrades, advances in complementary metal-oxide-semiconductor circuits have become unsustainable in the face of inherent silicon limits. New materials are being sought to compensate for silicon deficiencies, and two-dimensional materials are considered promising candidates due to their atomically thin structures and exotic physical properties. However, a potentially applicable method for incorporating two-dimensional materials into silicon platforms remains to be illustrated. Here we try to bridge two-dimensional materials and silicon technology, from integrated devices to monolithic 'on-silicon' (silicon as the substrate) and 'with-silicon' (silicon as a functional component) circuits, and discuss the corresponding requirements for material synthesis, device design and circuitry integration. Finally, we summarize the role played by two-dimensional materials in the silicon-dominated semiconductor industry and suggest the way forward, as well as the technologies that are expected to become mainstream in the near future.
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Affiliation(s)
- Shuiyuan Wang
- Shanghai Key Lab for Future Computing Hardware and System, School of Microelectronics, Fudan University, Shanghai, China
| | - Xiaoxian Liu
- Shanghai Key Lab for Future Computing Hardware and System, School of Microelectronics, Fudan University, Shanghai, China
| | - Mingsheng Xu
- State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics & Materials Science and Engineering, Zhejiang University, Hangzhou, China
| | - Liwei Liu
- Frontier Institute of Chip and System & Qizhi Institute, Fudan University, Shanghai, China
| | - Deren Yang
- State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics & Materials Science and Engineering, Zhejiang University, Hangzhou, China
| | - Peng Zhou
- Shanghai Key Lab for Future Computing Hardware and System, School of Microelectronics, Fudan University, Shanghai, China.
- Frontier Institute of Chip and System & Qizhi Institute, Fudan University, Shanghai, China.
- Hubei Yangtze Memory Laboratories, Wuhan, China.
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24
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Wang C, Xu X, Pi X, Butala MD, Huang W, Yin L, Peng W, Ali M, Bodepudi SC, Qiao X, Xu Y, Sun W, Yang D. Neuromorphic device based on silicon nanosheets. Nat Commun 2022; 13:5216. [PMID: 36064545 PMCID: PMC9445003 DOI: 10.1038/s41467-022-32884-y] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/05/2022] [Accepted: 08/22/2022] [Indexed: 11/09/2022] Open
Abstract
Silicon is vital for its high abundance, vast production, and perfect compatibility with the well-established CMOS processing industry. Recently, artificially stacked layered 2D structures have gained tremendous attention via fine-tuning properties for electronic devices. This article presents neuromorphic devices based on silicon nanosheets that are chemically exfoliated and surface-modified, enabling self-assembly into hierarchical stacking structures. The device functionality can be switched between a unipolar memristor and a feasibly reset-able synaptic device. The memory function of the device is based on the charge storage in the partially oxidized SiNS stacks followed by the discharge activated by the electric field at the Au-Si Schottky interface, as verified in both experimental and theoretical means. This work further inspired elegant neuromorphic computation models for digit recognition and noise filtration. Ultimately, it brings silicon - the most established semiconductor - back to the forefront for next-generation computations.
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Affiliation(s)
- Chenhao Wang
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, PR China
| | - Xinyi Xu
- ZJU-Hangzhou Global Scientific and Technological Innovation Centre, 310027, Hangzhou, PR China
- State Key Laboratory of Silicon Materials & School of Micro-Nanoelectronics, Zhejiang University, 310027, Hangzhou, PR China
- College of Information Science and Electronics Engineering, Zhejiang University, 310027, Hangzhou, PR China
- ZJU-UIUC Institute (ZJUI), Zhejiang University, 314400, Jiaxing, PR China
| | - Xiaodong Pi
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, PR China
- ZJU-Hangzhou Global Scientific and Technological Innovation Centre, 310027, Hangzhou, PR China
| | - Mark D Butala
- ZJU-UIUC Institute (ZJUI), Zhejiang University, 314400, Jiaxing, PR China
| | - Wen Huang
- New Energy Technology Engineering Laboratory of Jiangsu Provence & School of Science, Nanjing University of Posts and Telecommunications, 210023, Nanjing, PR China
| | - Lei Yin
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, PR China
| | - Wenbing Peng
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, PR China
| | - Munir Ali
- ZJU-Hangzhou Global Scientific and Technological Innovation Centre, 310027, Hangzhou, PR China
- State Key Laboratory of Silicon Materials & School of Micro-Nanoelectronics, Zhejiang University, 310027, Hangzhou, PR China
| | - Srikrishna Chanakya Bodepudi
- ZJU-Hangzhou Global Scientific and Technological Innovation Centre, 310027, Hangzhou, PR China
- State Key Laboratory of Silicon Materials & School of Micro-Nanoelectronics, Zhejiang University, 310027, Hangzhou, PR China
| | - Xvsheng Qiao
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, PR China
| | - Yang Xu
- ZJU-Hangzhou Global Scientific and Technological Innovation Centre, 310027, Hangzhou, PR China.
- State Key Laboratory of Silicon Materials & School of Micro-Nanoelectronics, Zhejiang University, 310027, Hangzhou, PR China.
- College of Information Science and Electronics Engineering, Zhejiang University, 310027, Hangzhou, PR China.
- ZJU-UIUC Institute (ZJUI), Zhejiang University, 314400, Jiaxing, PR China.
| | - Wei Sun
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, PR China.
| | - Deren Yang
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, 310027, Hangzhou, PR China.
- ZJU-Hangzhou Global Scientific and Technological Innovation Centre, 310027, Hangzhou, PR China.
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25
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Pam ME, Li S, Su T, Chien YC, Li Y, Ang YS, Ang KW. Interface-Modulated Resistive Switching in Mo-Irradiated ReS 2 for Neuromorphic Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2202722. [PMID: 35610176 DOI: 10.1002/adma.202202722] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2022] [Revised: 04/30/2022] [Indexed: 06/15/2023]
Abstract
Coupling charge impurity scattering effects and charge-carrier modulation by doping can offer intriguing opportunities for atomic-level control of resistive switching (RS). Nonetheless, such effects have remained unexplored for memristive applications based on 2D materials. Here a facile approach is reported to transform an RS-inactive rhenium disulfide (ReS2 ) into an effective switching material through interfacial modulation induced by molybdenum-irradiation (Mo-i) doping. Using ReS2 as a model system, this study unveils a unique RS mechanism based on the formation/dissolution of metallic β-ReO2 filament across the defective ReS2 interface during the set/reset process. Through simple interfacial modulation, ReS2 of various thicknesses are switchable by modulating the Mo-irradiation period. Besides, the Mo-irradiated ReS2 (Mo-ReS2 ) memristor further exhibits a bipolar non-volatile switching ratio of nearly two orders of magnitude, programmable multilevel resistance states, and long-term synaptic plasticity. Additionally, the fabricated device can achieve a high MNIST learning accuracy of 91% under a non-identical pulse train. The study's findings demonstrate the potential for modulating RS in RS-inactive 2D materials via the unique doping-induced charged impurity scattering property.
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Affiliation(s)
- Mei Er Pam
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Tong Su
- Science, Mathematics and Technology (SMT), Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore, 487372, Singapore
| | - Yu-Chieh Chien
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Yesheng Li
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
| | - Yee Sin Ang
- Science, Mathematics and Technology (SMT), Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore, 487372, Singapore
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore
- Institute of Materials Research and Engineering, A*STAR, 2 Fusionopolis, Singapore, 138634, Singapore
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26
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Lanza M, Sebastian A, Lu WD, Le Gallo M, Chang MF, Akinwande D, Puglisi FM, Alshareef HN, Liu M, Roldan JB. Memristive technologies for data storage, computation, encryption, and radio-frequency communication. Science 2022; 376:eabj9979. [PMID: 35653464 DOI: 10.1126/science.abj9979] [Citation(s) in RCA: 88] [Impact Index Per Article: 44.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2022]
Abstract
Memristive devices, which combine a resistor with memory functions such that voltage pulses can change their resistance (and hence their memory state) in a nonvolatile manner, are beginning to be implemented in integrated circuits for memory applications. However, memristive devices could have applications in many other technologies, such as non-von Neumann in-memory computing in crossbar arrays, random number generation for data security, and radio-frequency switches for mobile communications. Progress toward the integration of memristive devices in commercial solid-state electronic circuits and other potential applications will depend on performance and reliability challenges that still need to be addressed, as described here.
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Affiliation(s)
- Mario Lanza
- Materials Science and Engineering Program, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | | | - Wei D Lu
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA
| | | | - Meng-Fan Chang
- Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu, Taiwan.,Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Deji Akinwande
- Microelectronics Research Center, University of Texas, Austin, TX, USA
| | - Francesco M Puglisi
- Dipartimento di Ingegneria "Enzo Ferrari," Università di Modena e Reggio Emilia, 41125 Modena, Italy
| | - Husam N Alshareef
- Materials Science and Engineering Program, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Ming Liu
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
| | - Juan B Roldan
- Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, 18071 Granada, Spain
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27
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Yang H, Wang Y, Zou X, Bai R, Wu Z, Han S, Chen T, Hu S, Zhu H, Chen L, Zhang DW, Lee JC, Lu X, Zhou P, Sun Q, Yu ET, Akinwande D, Ji L. Wafer-Scale Synthesis of WS 2 Films with In Situ Controllable p-Type Doping by Atomic Layer Deposition. RESEARCH (WASHINGTON, D.C.) 2021; 2021:9862483. [PMID: 34957405 PMCID: PMC8672204 DOI: 10.34133/2021/9862483] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/30/2021] [Accepted: 11/09/2021] [Indexed: 11/24/2022]
Abstract
Wafer-scale synthesis of p-type TMD films is critical for its commercialization in next-generation electro/optoelectronics. In this work, wafer-scale intrinsic n-type WS2 films and in situ Nb-doped p-type WS2 films were synthesized through atomic layer deposition (ALD) on 8-inch α-Al2O3/Si wafers, 2-inch sapphire, and 1 cm2 GaN substrate pieces. The Nb doping concentration was precisely controlled by altering cycle number of Nb precursor and activated by postannealing. WS2 n-FETs and Nb-doped p-FETs with different Nb concentrations have been fabricated using CMOS-compatible processes. X-ray photoelectron spectroscopy, Raman spectroscopy, and Hall measurements confirmed the effective substitutional doping with Nb. The on/off ratio and electron mobility of WS2 n-FET are as high as 105 and 6.85 cm2 V−1 s−1, respectively. In WS2 p-FET with 15-cycle Nb doping, the on/off ratio and hole mobility are 10 and 0.016 cm2 V−1 s−1, respectively. The p-n structure based on n- and p- type WS2 films was proved with a 104 rectifying ratio. The realization of controllable in situ Nb-doped WS2 films paved a way for fabricating wafer-scale complementary WS2 FETs.
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Affiliation(s)
- Hanjie Yang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Yang Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Xingli Zou
- State Key Laboratory of Advanced Special Steel, School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Rongxu Bai
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Zecheng Wu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Sheng Han
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Tao Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Shen Hu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Hao Zhu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Lin Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - David W Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Jack C Lee
- Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, 78758 Texas, USA
| | - Xionggang Lu
- State Key Laboratory of Advanced Special Steel, School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Qingqing Sun
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Edward T Yu
- Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, 78758 Texas, USA
| | - Deji Akinwande
- Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, 78758 Texas, USA
| | - Li Ji
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
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28
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Calderon V S, Ferreira RV, Taneja D, Jayanth RT, Zhou L, Ribeiro RM, Akinwande D, Ferreira PJ. Atomic Electrostatic Maps of Point Defects in MoS 2. NANO LETTERS 2021; 21:10157-10164. [PMID: 34846155 DOI: 10.1021/acs.nanolett.1c02334] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
In this study, we use differential phase contrast images obtained by scanning transmission electron microscopy combined with computer simulations to map the atomic electrostatic fields of MoS2 monolayers and investigate the effect of sulfur monovacancies and divancancies on the atomic electric field and total charge distribution. A significant redistribution of the electric field in the regions containing defects is observed, with a progressive decrease in the strength of the projected electric field for each sulfur atom removed from its position. The electric field strength at the sulfur monovacancy sites is reduced by approximately 50% and nearly vanishes at the divacancy sites, where it drops to around 15% of the original value, demonstrating the tendency of these defects to attract positively charged ions or particles. In addition, the absence of the sulfur atoms leads to an inversion in the polarity of the total charge distribution in these regions.
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Affiliation(s)
- Sebastian Calderon V
- INL, International Iberian Nanotechnology Laboratory, Av. Mestre José Veiga s/n, 4715-330 Braga, Portugal
| | - Rafael V Ferreira
- INL, International Iberian Nanotechnology Laboratory, Av. Mestre José Veiga s/n, 4715-330 Braga, Portugal
- Mechanical Engineering Department and IDMEC, Instituto Superior Técnico, University of Lisbon, Av. Rovisco Pais, 1049-001 Lisboa, Portugal
| | - Deepyanti Taneja
- Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States
| | - R T Jayanth
- Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Langyan Zhou
- Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Ricardo M Ribeiro
- INL, International Iberian Nanotechnology Laboratory, Av. Mestre José Veiga s/n, 4715-330 Braga, Portugal
- Department and Centre of Physics, University of Minho, Campus of Gualtar, 4710-057 Braga, Portugal
| | - Deji Akinwande
- Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States
- Materials Science and Engineering Program, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Paulo J Ferreira
- INL, International Iberian Nanotechnology Laboratory, Av. Mestre José Veiga s/n, 4715-330 Braga, Portugal
- Materials Science and Engineering Program, The University of Texas at Austin, Austin, Texas 78712, United States
- Mechanical Engineering Department and IDMEC, Instituto Superior Técnico, University of Lisbon, Av. Rovisco Pais, 1049-001 Lisboa, Portugal
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29
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Li C, Li D, Zhang W, Li H, Yu G. Towards High‐Performance Resistive Switching Behavior through Embedding a D‐A System into 2D Imine‐Linked Covalent Organic Frameworks. Angew Chem Int Ed Engl 2021. [DOI: 10.1002/ange.202112924] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Chenyu Li
- Beijing National Laboratory for Molecular Sciences CAS Research/Education Center for Excellence in Molecular Sciences Institute of Chemistry Chinese Academy of Sciences Beijing 100190 P. R. China
- School of Chemical Sciences University of Chinese Academy of Sciences Beijing 100049 P. R. China
| | - Dong Li
- Beijing National Laboratory for Molecular Sciences CAS Research/Education Center for Excellence in Molecular Sciences Institute of Chemistry Chinese Academy of Sciences Beijing 100190 P. R. China
- School of Chemical Sciences University of Chinese Academy of Sciences Beijing 100049 P. R. China
| | - Weifeng Zhang
- Beijing National Laboratory for Molecular Sciences CAS Research/Education Center for Excellence in Molecular Sciences Institute of Chemistry Chinese Academy of Sciences Beijing 100190 P. R. China
| | - Hao Li
- Beijing National Laboratory for Molecular Sciences CAS Research/Education Center for Excellence in Molecular Sciences Institute of Chemistry Chinese Academy of Sciences Beijing 100190 P. R. China
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences CAS Research/Education Center for Excellence in Molecular Sciences Institute of Chemistry Chinese Academy of Sciences Beijing 100190 P. R. China
- School of Chemical Sciences University of Chinese Academy of Sciences Beijing 100049 P. R. China
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30
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Bian H, Goh YY, Liu Y, Ling H, Xie L, Liu X. Stimuli-Responsive Memristive Materials for Artificial Synapses and Neuromorphic Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2006469. [PMID: 33837601 DOI: 10.1002/adma.202006469] [Citation(s) in RCA: 31] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/22/2020] [Revised: 12/03/2020] [Indexed: 06/12/2023]
Abstract
Neuromorphic computing holds promise for building next-generation intelligent systems in a more energy-efficient way than the conventional von Neumann computing architecture. Memristive hardware, which mimics biological neurons and synapses, offers high-speed operation and low power consumption, enabling energy- and area-efficient, brain-inspired computing. Here, recent advances in memristive materials and strategies that emulate synaptic functions for neuromorphic computing are highlighted. The working principles and characteristics of biological neurons and synapses, which can be mimicked by memristive devices, are presented. Besides device structures and operation with different external stimuli such as electric, magnetic, and optical fields, how memristive materials with a rich variety of underlying physical mechanisms can allow fast, reliable, and low-power neuromorphic applications is also discussed. Finally, device requirements are examined and a perspective on challenges in developing memristive materials for device engineering and computing science is given.
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Affiliation(s)
- Hongyu Bian
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Yi Yiing Goh
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
- NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore, 119077, Singapore
| | - Yuxia Liu
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
- Center for Functional Materials, National University of Singapore Suzhou Research Institute, Suzhou, 215123, China
| | - Haifeng Ling
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Linghai Xie
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Xiaogang Liu
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
- Center for Functional Materials, National University of Singapore Suzhou Research Institute, Suzhou, 215123, China
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31
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Li C, Li D, Zhang W, Li H, Yu G. Towards High-Performance Resistive Switching Behavior through Embedding a D-A System into 2D Imine-Linked Covalent Organic Frameworks. Angew Chem Int Ed Engl 2021; 60:27135-27143. [PMID: 34585820 DOI: 10.1002/anie.202112924] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/22/2021] [Indexed: 12/22/2022]
Abstract
Developing new materials for the fabrication of resistive random-access memory is of great significance in this period of big data. Herein, we present a novel design strategy of embedding donor (D) and acceptor (A) fragments into imine-linked frameworks to construct resistive switching covalent organic frameworks (COFs) for high-performance memristors. Two D-A-type two-dimensional COFs, COF-BT-TT and COF-TT-TVT, were designed and synthesized using a conventional solvothermal approach, and high-quality thin films of these materials deposited on ITO substrate exhibited great potential as an active layer for memristors. Rewritable memristors based on 100 nm thick COF-TT-BT and COF-TT-TVT films showed a high ON/OFF current ratio (ca. 105 and 104 ) and low driving voltage (1.30 and 1.60 V). The cycle period and retention time for COF-TT-BT-based rewritable devices were as high as 319 cycles and 3.3×104 s at a constant voltage of 0.1 V (160 cycles and 1.2×104 s for the COF-TT-TVT memristor).
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Affiliation(s)
- Chenyu Li
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.,School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Dong Li
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.,School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Weifeng Zhang
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Hao Li
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.,School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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Wang J, Teng C, Zhang Z, Chen W, Tan J, Pan Y, Zhang R, Zhou H, Ding B, Cheng HM, Liu B. A Scalable Artificial Neuron Based on Ultrathin Two-Dimensional Titanium Oxide. ACS NANO 2021; 15:15123-15131. [PMID: 34534433 DOI: 10.1021/acsnano.1c05565] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
A spiking neural network consists of artificial synapses and neurons and may realize human-level intelligence. Unlike the widely reported artificial synapses, the fabrication of large-scale artificial neurons with good performance is still challenging due to the lack of a suitable material system and integration method. Here, we report an ultrathin (less than10 nm) and inch-size two-dimensional (2D) oxide-based artificial neuron system produced by a controllable assembly of solution-processed 2D monolayer TiOx nanosheets. Artificial neuron devices based on such 2D TiOx films show a high on/off ratio of 109 and a volatile resistance switching phenomenon. The devices can not only emulate the leaky integrate-and-fire activity but also self-recover without additional circuits for sensing and reset. Moreover, the artificial neuron arrays are fabricated and exhibited good uniformity, indicating their large-area integration potential. Our results offer a strategy for fabricating large-scale and ultrathin 2D material-based artificial neurons and 2D spiking neural networks.
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Affiliation(s)
- Jingyun Wang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
| | - Changjiu Teng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
| | - Zhiyuan Zhang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
| | - Wenjun Chen
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
| | - Junyang Tan
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
| | - Yikun Pan
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
| | - Rongjie Zhang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
| | - Heyuan Zhou
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
| | - Baofu Ding
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China
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Yang L, Chen W, Huang J, Tang X, Yang R, Zhang H, Tang Z, Gui X. Resistance Switching and Failure Behavior of the MoO x/Mo 2C Heterostructure. ACS APPLIED MATERIALS & INTERFACES 2021; 13:41857-41865. [PMID: 34432418 DOI: 10.1021/acsami.1c06663] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
With the rapid demand for high-performance and power-efficient memristive and synaptic systems, more 2D heterostructures with improved resistance switching (RS) properties are still urgently in need for next-generation devices. Here, we report the RS behaviors of vertical MoOx/Mo2C heterostructures fabricated by controllable thermal oxidation and uncover the failure behavior for the first time. It is found that the MoOx/Mo2C heterostructure exhibits bipolar RS with a low set/reset voltage of +0.5/-0.3 V, an ultralow power consumption of 5 × 10-8 W, and an on/off ratio of 102, which is ascribed to the transport of the internal oxygen ions of MoOx. Furthermore, the failure behavior of RS behaviors of the MoOx/Mo2C heterostructure under a higher work voltage is revealed. It indicates that the amorphization of the pristine crystalline MoOx layer could block the movement of the internal oxygen ions in the vertical direction. The excellent RS performance induced by the synergy of MoOx and Mo2C and the demonstration of the failure behavior enable the potential applications of the 2D heterostructure in related memory devices and biological neural networks.
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Affiliation(s)
- Leilei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Wenjun Chen
- School of Electronic and Information Engineering, Foshan University, Foshan 528000, China
| | - Junhua Huang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Xin Tang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Rongliang Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Hao Zhang
- Instrumental Analysis and Research Center (IARC), Sun Yat-sen University, Guangzhou 510275, China
| | - Zikang Tang
- Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau 999078, China
| | - Xuchun Gui
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
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Zhang R, Chen W, Teng C, Liao W, Liu B, Cheng HM. Realization of a non-markov chain in a single 2D mineral RRAM. Sci Bull (Beijing) 2021; 66:1634-1640. [PMID: 36654297 DOI: 10.1016/j.scib.2021.04.025] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/10/2020] [Revised: 01/18/2021] [Accepted: 04/04/2021] [Indexed: 01/20/2023]
Abstract
The non-Markov process exists widely in thermodymanic process, while it usually requires the packing of many transistors and memories with great system complexity in a traditional device structure to minic such functions. Two-dimensional (2D) material-based resistive random access memory (RRAM) devices have the potential for next-generation computing systems with much-reduced complexity. Here, we achieve a non-Markov chain in an individual RRAM device based on 2D mineral material mica with a vertical metal/mica/metal structure. We find that the potassium ions (K+) in 2D mica gradually move in the direction of the applied electric field, making the initially insulating mica conductive. The accumulation of K+ is changed by an electric field, and the 2D-mica RRAM has both single and double memory windows, a high on/off ratio, decent stability, and repeatability. This is the first time a non-Markov chain process has been established in a single RRAM, in which the movement of K+ is dependent on the stimulated voltage as well as their past states. This work not only uncovers an intrinsic inner ionic conductivity of 2D mica, but also opens the door for the production of such RRAM devices with numerous functions and applications.
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Affiliation(s)
- Rongjie Zhang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Wenjun Chen
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Changjiu Teng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Wugang Liao
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China.
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China.
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Yin X, Tang CS, Zheng Y, Gao J, Wu J, Zhang H, Chhowalla M, Chen W, Wee ATS. Recent developments in 2D transition metal dichalcogenides: phase transition and applications of the (quasi-)metallic phases. Chem Soc Rev 2021; 50:10087-10115. [PMID: 34396377 DOI: 10.1039/d1cs00236h] [Citation(s) in RCA: 67] [Impact Index Per Article: 22.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/24/2023]
Abstract
The advent of two-dimensional transition metal dichalcogenides (2D-TMDs) has led to an extensive amount of interest amongst scientists and engineers alike and an intensive amount of research has brought about major breakthroughs in the electronic and optical properties of 2D materials. This in turn has generated considerable interest in novel device applications. With the polymorphic structural features of 2D-TMDs, this class of materials can exhibit both semiconducting and metallic (quasi-metallic) properties in their respective phases. This polymorphic property further increases the interest in 2D-TMDs both in fundamental research and for their potential utilization in novel high-performance device applications. In this review, we highlight the unique structural properties of few-layer and monolayer TMDs in the metallic 1T- and quasi-metallic 1T'-phases, and how these phases dictate their electronic and optical properties. An overview of the semiconducting-to-(quasi)-metallic phase transition of 2D-TMD systems will be covered along with a discussion on the phase transition mechanisms. The current development in the applications of (quasi)-metallic 2D-TMDs will be presented ranging from high-performance electronic and optoelectronic devices to energy storage, catalysis, piezoelectric and thermoelectric devices, and topological insulator and neuromorphic computing applications. We conclude our review by highlighting the challenges confronting the utilization of TMD-based systems and projecting the future developmental trends with an outlook of the progress needed to propel this exciting field forward.
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Affiliation(s)
- Xinmao Yin
- Shanghai Key Laboratory of High Temperature Superconductors, Physics Department, Shanghai University, Shanghai 200444, China
| | - Chi Sin Tang
- Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, 138634, Singapore and Department of Physics, Faculty of Science, National University of Singapore, Singapore 117542, Singapore.
| | - Yue Zheng
- Department of Physics, Faculty of Science, National University of Singapore, Singapore 117542, Singapore.
| | - Jing Gao
- Department of Physics, Faculty of Science, National University of Singapore, Singapore 117542, Singapore.
| | - Jing Wu
- Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, 138634, Singapore
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Hong Kong, China and Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China and Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, China
| | - Manish Chhowalla
- Department of Materials Science & Metallurgy, University of Cambridge, Cambridge, CB30FS, UK
| | - Wei Chen
- Department of Physics, Faculty of Science, National University of Singapore, Singapore 117542, Singapore. and Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Andrew T S Wee
- Department of Physics, Faculty of Science, National University of Singapore, Singapore 117542, Singapore.
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Liu L, Li Y, Huang X, Chen J, Yang Z, Xue K, Xu M, Chen H, Zhou P, Miao X. Low-Power Memristive Logic Device Enabled by Controllable Oxidation of 2D HfSe 2 for In-Memory Computing. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2005038. [PMID: 34050639 PMCID: PMC8336485 DOI: 10.1002/advs.202005038] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2020] [Revised: 03/30/2021] [Indexed: 05/09/2023]
Abstract
Memristive logic device is a promising unit for beyond von Neumann computing systems and 2D materials are widely used because of their controllable interfacial properties. Most of these 2D memristive devices, however, are made from semiconducting chalcogenides which fail to gate the off-state current. To this end, a crossbar device using 2D HfSe2 is fabricated, and then the top layers are oxidized into "high-k" dielectric HfSex Oy via oxygen plasma treatment, so that the cell resistance can be remarkably increased. This two-terminal Ti/HfSex Oy /HfSe2 /Au device exhibits excellent forming-free resistive switching performance with high switching speed (<50 ns), low operation voltage (<3 V), large switching window (103 ), and good data retention. Most importantly, the operation current and the power consumption reach 100 pA and 0.1 fJ to 0.1 pJ, much lower than other HfO based memristors. A functionally complete low-power Boolean logic is experimentally demonstrated using the memristive device, allowing it in the application of energy-efficient in-memory computing.
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Affiliation(s)
- Long Liu
- Wuhan National Laboratory for OptoelectronicsSchool of Optical and Electronic InformationHuazhong University of Science and TechnologyWuhan430074China
| | - Yi Li
- Wuhan National Laboratory for OptoelectronicsSchool of Optical and Electronic InformationHuazhong University of Science and TechnologyWuhan430074China
| | - Xiaodi Huang
- Wuhan National Laboratory for OptoelectronicsSchool of Optical and Electronic InformationHuazhong University of Science and TechnologyWuhan430074China
| | - Jia Chen
- Wuhan National Laboratory for OptoelectronicsSchool of Optical and Electronic InformationHuazhong University of Science and TechnologyWuhan430074China
| | - Zhe Yang
- Wuhan National Laboratory for OptoelectronicsSchool of Optical and Electronic InformationHuazhong University of Science and TechnologyWuhan430074China
| | - Kan‐Hao Xue
- Wuhan National Laboratory for OptoelectronicsSchool of Optical and Electronic InformationHuazhong University of Science and TechnologyWuhan430074China
| | - Ming Xu
- Wuhan National Laboratory for OptoelectronicsSchool of Optical and Electronic InformationHuazhong University of Science and TechnologyWuhan430074China
| | - Huawei Chen
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
| | - Peng Zhou
- State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai200433China
| | - Xiangshui Miao
- Wuhan National Laboratory for OptoelectronicsSchool of Optical and Electronic InformationHuazhong University of Science and TechnologyWuhan430074China
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37
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Zhang W, Gao H, Deng C, Lv T, Hu S, Wu H, Xue S, Tao Y, Deng L, Xiong W. An ultrathin memristor based on a two-dimensional WS 2/MoS 2 heterojunction. NANOSCALE 2021; 13:11497-11504. [PMID: 34165120 DOI: 10.1039/d1nr01683k] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Memristors are regarded as one of the key devices to break through the traditional Von Neumann computer architecture due to their capability of simulating the function of neural synapses. Among various memristive materials, two-dimensional (2D) materials are promising candidates to build advanced memristors with extremely high integration density and low power consumption. However, memristors based on 2D materials usually suffer from poor endurance and retention due to their vulnerability to material degradation during the formation/fusing processes of conductive filament channels within the switching media of 2D materials. Here, a new memristor architecture based on a WS2/MoS2 2D semiconducting heterojunction (metal/heterojunction/metal, MHM) is proposed, which is completely different from the conventional metal/insulator/metal (MIM) sandwich structure. Through the introduction of a type-II 2D heterojunction, a resistance switching mechanism based on band modulation rather than the conductive filaments can be realized to eliminate the material degradation during the set/reset processes. A prototype MHM memristor based on the WS2/MoS2 heterojunction is successfully developed with a large switching on/off ratio up to 104 and a clearly extended endurance over 120 switching cycles, showing the advantage of the 2D WS2/MoS2 heterojunction over the individual MoS2 or WS2 layers in memristive performance. The proposed method for the MHM-type 2D memristor has the potential to achieve a large-scale integrated memristor matrix with low power consumption and high integration density, which is promising for future artificial intelligence and brain-like computing systems.
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Affiliation(s)
- Wenguang Zhang
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Hui Gao
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Chunsan Deng
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Ting Lv
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Sanlue Hu
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Hao Wu
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Songyan Xue
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Yufeng Tao
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China. and Institute of Micro-nano Optoelectronics and Terahertz Technology, Jiangsu University, Zhenjiang, 212013, China
| | - Leimin Deng
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Wei Xiong
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
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38
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Dragoman M, Aldrigo M, Dragoman D. Perspectives on Atomic-Scale Switches for High-Frequency Applications Based on Nanomaterials. NANOMATERIALS 2021; 11:nano11030625. [PMID: 33802404 PMCID: PMC8001390 DOI: 10.3390/nano11030625] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/06/2021] [Revised: 02/15/2021] [Accepted: 02/26/2021] [Indexed: 11/24/2022]
Abstract
Nanomaterials science is becoming the foundation stone of high-frequency applications. The downscaling of electronic devices and components allows shrinking chip’s dimensions at a more-than-Moore rate. Many theoretical limits and manufacturing constraints are yet to be taken into account. A promising path towards nanoelectronics is represented by atomic-scale materials. In this manuscript, we offer a perspective on a specific class of devices, namely switches designed and fabricated using two-dimensional or nanoscale materials, like graphene, molybdenum disulphide, hexagonal boron nitride and ultra-thin oxides for high-frequency applications. An overview is provided about three main types of microwave and millimeter-wave switch: filament memristors, nano-ionic memristors and ferroelectric junctions. The physical principles that govern each switch are presented, together with advantages and disadvantages. In the last part we focus on zirconium-doped hafnium oxide ferroelectrics (HfZrO) tunneling junctions (FTJ), which are likely to boost the research in the domain of atomic-scale materials applied in engineering sciences. Thanks to their Complementary Metal-Oxide Semiconductor (CMOS) compatibility and low-voltage tunability (among other unique physical properties), HfZrO compounds have the potential for large-scale applicability. As a practical case of study, we present a 10 GHz transceiver in which the switches are FTJs, which guarantee excellent isolation and ultra-fast switching time.
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Affiliation(s)
- Mircea Dragoman
- National Institute for Research and Development in Microtechnologies (IMT Bucharest), Erou Iancu Nicolae Street 126A, 077190 Voluntari, Romania;
- Correspondence: ; Tel.: +40-21-2690-775
| | - Martino Aldrigo
- National Institute for Research and Development in Microtechnologies (IMT Bucharest), Erou Iancu Nicolae Street 126A, 077190 Voluntari, Romania;
| | - Daniela Dragoman
- Physics Faculty, University of Bucharest, P.O. Box MG-11, 077125 Bucharest, Romania;
- Academy of Romanian Scientists, Splaiul Independentei 54, 050094 Bucharest, Romania
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39
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Ge R, Wu X, Liang L, Hus SM, Gu Y, Okogbue E, Chou H, Shi J, Zhang Y, Banerjee SK, Jung Y, Lee JC, Akinwande D. A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching Phenomenon. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2007792. [PMID: 33368706 DOI: 10.1002/adma.202007792] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2020] [Indexed: 06/12/2023]
Abstract
Non-volatile resistive switching (NVRS) is a widely available effect in transitional metal oxides, colloquially known as memristors, and of broad interest for memory technology and neuromorphic computing. Until recently, NVRS was not known in other transitional metal dichalcogenides (TMDs), an important material class owing to their atomic thinness enabling the ultimate dimensional scaling. Here, various monolayer or few-layer 2D materials are presented in the conventional vertical structure that exhibit NVRS, including TMDs (MX2 , M = transitional metal, e.g., Mo, W, Re, Sn, or Pt; X = chalcogen, e.g., S, Se, or Te), TMD heterostructure (WS2 /MoS2 ), and an atomically thin insulator (h-BN). These results indicate the universality of the phenomenon in 2D non-conductive materials, and feature low switching voltage, large ON/OFF ratio, and forming-free characteristic. A dissociation-diffusion-adsorption model is proposed, attributing the enhanced conductance to metal atoms/ions adsorption into intrinsic vacancies, a conductive-point mechanism supported by first-principle calculations and scanning tunneling microscopy characterizations. The results motivate further research in the understanding and applications of defects in 2D materials.
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Affiliation(s)
- Ruijing Ge
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA
| | - Xiaohan Wu
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA
| | - Liangbo Liang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Saban M Hus
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA
| | - Yuqian Gu
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA
| | - Emmanuel Okogbue
- Nanoscience Technology Center and Department of Electrical Engineering, University of Central Florida, Orlando, FL, 32826, USA
| | - Harry Chou
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA
| | - Jianping Shi
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Yanfeng Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, China
| | - Sanjay K Banerjee
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA
| | - Yeonwoong Jung
- Nanoscience Technology Center and Department of Electrical Engineering, University of Central Florida, Orlando, FL, 32826, USA
- Department of Materials Science and Technology, University of Central Florida, Orlando, FL, 32816, USA
| | - Jack C Lee
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA
| | - Deji Akinwande
- Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA
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40
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Xiong F, Wang Z, Bøjesen ED, Xiong X, Zhu Z, Dong M. In Situ Resistive Switching Effect Scrutinization on Co-Designed Graphene Sensor. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2007053. [PMID: 33522141 DOI: 10.1002/smll.202007053] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2020] [Revised: 12/23/2020] [Indexed: 06/12/2023]
Abstract
Resistive switching (RS), an electric property based on the forming and rupture of conductive filaments in metal-insulator-metal structures, has attracted intensive attention due to its potential application in next generation energy-efficient and area-efficient memory devices. In situ studies of the RS effect are urgently needed for its mechanism understanding and memristive performance improvement. Here investigations of both the RS effect as well as the gate tunable conductance quantization effect are realized by co-designing an Ag/SiO2 based memory structure on a graphene local sensor. This design enables self-monitoring of the working states of the memristor in real-time by virtue of the graphene sensor. These findings pave the way for further investigations of on-chip electronics and quantum physics.
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Affiliation(s)
- Feng Xiong
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China
- Interdisciplinary Nanoscience Center (iNANO), Aarhus University, Aarhus C, Aarhus, DK, 8000, Denmark
| | - Zegao Wang
- Interdisciplinary Nanoscience Center (iNANO), Aarhus University, Aarhus C, Aarhus, DK, 8000, Denmark
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, P. R. China
| | - Espen Drath Bøjesen
- Interdisciplinary Nanoscience Center (iNANO), Aarhus University, Aarhus C, Aarhus, DK, 8000, Denmark
| | - Xuya Xiong
- Interdisciplinary Nanoscience Center (iNANO), Aarhus University, Aarhus C, Aarhus, DK, 8000, Denmark
| | - Zhihong Zhu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China
| | - Mingdong Dong
- Interdisciplinary Nanoscience Center (iNANO), Aarhus University, Aarhus C, Aarhus, DK, 8000, Denmark
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41
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Hus SM, Ge R, Chen PA, Liang L, Donnelly GE, Ko W, Huang F, Chiang MH, Li AP, Akinwande D. Observation of single-defect memristor in an MoS 2 atomic sheet. NATURE NANOTECHNOLOGY 2021; 16:58-62. [PMID: 33169008 DOI: 10.1038/s41565-020-00789-w] [Citation(s) in RCA: 70] [Impact Index Per Article: 23.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2020] [Accepted: 10/01/2020] [Indexed: 05/23/2023]
Abstract
Non-volatile resistive switching, also known as memristor1 effect, where an electric field switches the resistance states of a two-terminal device, has emerged as an important concept in the development of high-density information storage, computing and reconfigurable systems2-9. The past decade has witnessed substantial advances in non-volatile resistive switching materials such as metal oxides and solid electrolytes. It was long believed that leakage currents would prevent the observation of this phenomenon for nanometre-thin insulating layers. However, the recent discovery of non-volatile resistive switching in two-dimensional monolayers of transition metal dichalcogenide10,11 and hexagonal boron nitride12 sandwich structures (also known as atomristors) has refuted this belief and added a new materials dimension owing to the benefits of size scaling10,13. Here we elucidate the origin of the switching mechanism in atomic sheets using monolayer MoS2 as a model system. Atomistic imaging and spectroscopy reveal that metal substitution into a sulfur vacancy results in a non-volatile change in the resistance, which is corroborated by computational studies of defect structures and electronic states. These findings provide an atomistic understanding of non-volatile switching and open a new direction in precision defect engineering, down to a single defect, towards achieving the smallest memristor for applications in ultra-dense memory, neuromorphic computing and radio-frequency communication systems2,3,11.
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Affiliation(s)
- Saban M Hus
- Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, USA
| | - Ruijing Ge
- Texas Materials Institute, The University of Texas at Austin, Austin, TX, USA
| | - Po-An Chen
- Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan
| | - Liangbo Liang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Gavin E Donnelly
- School of Mathematics and Physics, Queen's University Belfast, Belfast, UK
| | - Wonhee Ko
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Fumin Huang
- School of Mathematics and Physics, Queen's University Belfast, Belfast, UK
| | - Meng-Hsueh Chiang
- Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan
| | - An-Ping Li
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Deji Akinwande
- Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, USA.
- Texas Materials Institute, The University of Texas at Austin, Austin, TX, USA.
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42
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Berggren K, Xia Q, Likharev KK, Strukov DB, Jiang H, Mikolajick T, Querlioz D, Salinga M, Erickson JR, Pi S, Xiong F, Lin P, Li C, Chen Y, Xiong S, Hoskins BD, Daniels MW, Madhavan A, Liddle JA, McClelland JJ, Yang Y, Rupp J, Nonnenmann SS, Cheng KT, Gong N, Lastras-Montaño MA, Talin AA, Salleo A, Shastri BJ, de Lima TF, Prucnal P, Tait AN, Shen Y, Meng H, Roques-Carmes C, Cheng Z, Bhaskaran H, Jariwala D, Wang H, Shainline JM, Segall K, Yang JJ, Roy K, Datta S, Raychowdhury A. Roadmap on emerging hardware and technology for machine learning. NANOTECHNOLOGY 2021; 32:012002. [PMID: 32679577 PMCID: PMC11411818 DOI: 10.1088/1361-6528/aba70f] [Citation(s) in RCA: 32] [Impact Index Per Article: 10.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Recent progress in artificial intelligence is largely attributed to the rapid development of machine learning, especially in the algorithm and neural network models. However, it is the performance of the hardware, in particular the energy efficiency of a computing system that sets the fundamental limit of the capability of machine learning. Data-centric computing requires a revolution in hardware systems, since traditional digital computers based on transistors and the von Neumann architecture were not purposely designed for neuromorphic computing. A hardware platform based on emerging devices and new architecture is the hope for future computing with dramatically improved throughput and energy efficiency. Building such a system, nevertheless, faces a number of challenges, ranging from materials selection, device optimization, circuit fabrication and system integration, to name a few. The aim of this Roadmap is to present a snapshot of emerging hardware technologies that are potentially beneficial for machine learning, providing the Nanotechnology readers with a perspective of challenges and opportunities in this burgeoning field.
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Affiliation(s)
- Karl Berggren
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
| | - Qiangfei Xia
- Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, United States of America
| | | | - Dmitri B Strukov
- Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara, CA 93106, United States of America
| | - Hao Jiang
- School of Engineering & Applied Science Yale University, CT, United States of America
| | | | | | - Martin Salinga
- Institut für Materialphysik, Westfälische Wilhelms-Universität Münster, Germany
| | - John R Erickson
- Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA 15261, United States of America
| | - Shuang Pi
- Lam Research, Fremont, CA, United States of America
| | - Feng Xiong
- Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA 15261, United States of America
| | - Peng Lin
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
| | - Can Li
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong SAR, China
| | - Yu Chen
- School of information science and technology, Fudan University, Shanghai, People's Republic of China
| | - Shisheng Xiong
- School of information science and technology, Fudan University, Shanghai, People's Republic of China
| | - Brian D Hoskins
- Physical Measurements Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America
| | - Matthew W Daniels
- Physical Measurements Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America
| | - Advait Madhavan
- Physical Measurements Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America
- Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, United States of America
| | - James A Liddle
- Physical Measurements Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America
| | - Jabez J McClelland
- Physical Measurements Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States of America
| | - Yuchao Yang
- School of Electronics Engineering and Computer Science, Peking University, Beijing, People's Republic of China
| | - Jennifer Rupp
- Department of Materials Science and Engineering and Department of Electrical Engineering & Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
- Electrochemical Materials, ETHZ Department of Materials, Hönggerbergring 64, Zürich 8093, Switzerland
| | - Stephen S Nonnenmann
- Department of Mechanical & Industrial Engineering, University of Massachusetts-Amherst, MA, United States of America
| | - Kwang-Ting Cheng
- School of Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, People's Republic of China
| | - Nanbo Gong
- IBM T J Watson Research Center, Yorktown Heights, NY 10598, United States of America
| | - Miguel Angel Lastras-Montaño
- Instituto de Investigación en Comunicación Óptica, Facultad de Ciencias, Universidad Autónoma de San Luis Potosí, México
| | - A Alec Talin
- Sandia National Laboratories, Livermore, CA 94551, United States of America
| | - Alberto Salleo
- Department of Materials Science and Engineering, Stanford University, Stanford, California, United States of America
| | - Bhavin J Shastri
- Department of Physics, Engineering Physics & Astronomy, Queen's University, Kingston ON KL7 3N6, Canada
| | - Thomas Ferreira de Lima
- Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, United States of America
| | - Paul Prucnal
- Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, United States of America
| | - Alexander N Tait
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Boulder, CO 80305, United States of America
| | - Yichen Shen
- Lightelligence, 268 Summer Street, Boston, MA 02210, United States of America
| | - Huaiyu Meng
- Lightelligence, 268 Summer Street, Boston, MA 02210, United States of America
| | - Charles Roques-Carmes
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, United States of America
| | - Zengguang Cheng
- Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Harish Bhaskaran
- Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia PA 19104, United States of America
| | - Han Wang
- University of Southern California, Los Angeles, CA 90089, United States of America
| | - Jeffrey M Shainline
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Boulder, CO 80305, United States of America
| | - Kenneth Segall
- Department of Physics and Astronomy, Colgate University, NY 13346, United States of America
| | - J Joshua Yang
- Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, United States of America
| | - Kaushik Roy
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, United States of America
| | - Suman Datta
- University of Notre Dame, Notre Dame, IN 46556, United States of America
| | - Arijit Raychowdhury
- Georgia Institute of Technology, Atlanta, GA 30332, United States of America
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43
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Wu X, Ge R, Huang Y, Akinwande D, Lee JC. Resistance state evolution under constant electric stress on a MoS 2 non-volatile resistive switching device. RSC Adv 2020; 10:42249-42255. [PMID: 35516745 PMCID: PMC9057845 DOI: 10.1039/d0ra05209d] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/13/2020] [Accepted: 11/12/2020] [Indexed: 11/26/2022] Open
Abstract
MoS2 has been reported to exhibit a resistive switching phenomenon in a vertical metal–insulator–metal (MIM) structure and has attracted much attention due to its ultra-thin active layer thickness. Here, the resistance evolutions in the high resistance state (HRS) and low resistance state (LRS) are investigated under constant voltage stress (CVS) or constant current stress (CCS) on MoS2 resistive switching devices. Interestingly, compared with bulk transition metal oxides (TMO), MoS2 exhibits an opposite characteristic in the fresh or pre-RESET device in the “HRS” wherein the resistance will increase to an even higher resistance after applying CVS, a unique phenomenon only accessible in 2D-based resistive switching devices. It is inferred that instead of in the highest resistance state, the fresh or pre-RESET devices are in an intermediate state with a small amount of Au embedded in the MoS2 film. Inspired by the capability of both bipolar and unipolar operation, positive and negative CVS measurements are performed and show similar characteristics. In addition, it is observed that the resistance state transition is faster when using higher electric stress. Numerical simulations have been performed to study the temperature effect with small-area integration capability. These results can be explained by a modified conductive-bridge-like model based on Au migration, uncovering the switching mechanisms in the ultrathin 2D materials and inspiring future studies in this area. Constant voltage and current stress were applied on MoS2 resistive switching devices, showing unique behaviors explained by a modified conductive-bridge-like model.![]()
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Affiliation(s)
- Xiaohan Wu
- Microelectronics Research Center, The University of Texas at Austin Austin Texas 78758 USA
| | - Ruijing Ge
- Microelectronics Research Center, The University of Texas at Austin Austin Texas 78758 USA
| | - Yifu Huang
- Microelectronics Research Center, The University of Texas at Austin Austin Texas 78758 USA
| | - Deji Akinwande
- Microelectronics Research Center, The University of Texas at Austin Austin Texas 78758 USA
| | - Jack C Lee
- Microelectronics Research Center, The University of Texas at Austin Austin Texas 78758 USA
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44
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Wu X, Ge R, Akinwande D, Lee JC. Understanding of multiple resistance states by current sweeping in MoS 2-based non-volatile memory devices. NANOTECHNOLOGY 2020; 31:465206. [PMID: 32647100 DOI: 10.1088/1361-6528/aba46a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Recently, various two-dimensional materials have been reported to exhibit non-volatile resistance switching phenomenon. The atomristors, featuring memristor effect in atomically thin nanomaterials such as monolayer transition metal dichalcogenides and hexagonal boron nitride, have drawn much attention due to the extremely thin active layer thickness with the advantages of forming-free characteristic, large on/off resistance ratio and fast switching speed. To investigate the switching mechanisms in the 2D monolayers, we introduced an electrical characterization method by current sweeping to illustrate the detailed information hidden in the commonly used voltage-sweep curves. Multiple transition steps have been observed in the SET process of MoS2-based resistance switching devices. The different behaviors of transition steps were attributed to the number of defects or vacancies associated with the switching phenomenon, which is consistent with the previously reported conductive-bridge-like model for 2D atomristors. This work provides an approach using current sweeping to precisely characterize the resistance switching effect and inspires further research to optimize the defect distribution in 2D materials for the applications in multi-bit non-volatile memory and neuromorphic computing.
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Affiliation(s)
- Xiaohan Wu
- Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States of America
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45
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Frey NC, Akinwande D, Jariwala D, Shenoy VB. Machine Learning-Enabled Design of Point Defects in 2D Materials for Quantum and Neuromorphic Information Processing. ACS NANO 2020; 14:13406-13417. [PMID: 32897682 DOI: 10.1021/acsnano.0c05267] [Citation(s) in RCA: 42] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Engineered point defects in two-dimensional (2D) materials offer an attractive platform for solid-state devices that exploit tailored optoelectronic, quantum emission, and resistive properties. Naturally occurring defects are also unavoidably important contributors to material properties and performance. The immense variety and complexity of possible defects make it challenging to experimentally control, probe, or understand atomic-scale defect-property relationships. Here, we develop an approach based on deep transfer learning, machine learning, and first-principles calculations to rapidly predict key properties of point defects in 2D materials. We use physics-informed featurization to generate a minimal description of defect structures and present a general picture of defects across materials systems. We identify over one hundred promising, unexplored dopant defect structures in layered metal chalcogenides, hexagonal nitrides, and metal halides. These defects are prime candidates for quantum emission, resistive switching, and neuromorphic computing.
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Affiliation(s)
- Nathan C Frey
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Deji Akinwande
- Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Vivek B Shenoy
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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46
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Chen Q, Chen M, Zhu L, Miao N, Zhou J, Ackland GJ, Sun Z. Composition-Gradient-Mediated Semiconductor-Metal Transition in Ternary Transition-Metal-Dichalcogenide Bilayers. ACS APPLIED MATERIALS & INTERFACES 2020; 12:45184-45191. [PMID: 32914966 DOI: 10.1021/acsami.0c13104] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The semiconductor-metal transition (SMT) enables multiple applications of one single material, especially in modern devices. How to control it remains one of the most intriguing questions in material physics/chemistry, especially in two-dimensional layered materials. In this work, we report realization of SMT in MoS2-xOx bilayers, driven by the concentration gradient of the chalcogen atom across the van der Waals (vdW) gap of the disordered bilayers. Using the cluster expansion method, we determined that either semiconducting (stable) or metallic states (metastable) can be realized in MoS2-xOx bilayers with the same composition. Machine learning analysis revealed that the concentration gradient of the chalcogen atom across the vdW gap is the leading fingerprint of SMT, with structural distortion induced by atom mixing being a significant secondary factor. The electronic origin of the SMT is the broadening of the Mo dz2 and O pz bands, accompanied by the redistribution of the d electrons. This in-vdW-gap composition-gradient-driven SMT phenomenon also applies to MoSe2-xOx and MoTe2-xOx bilayers. The present work provides an alternative mechanism of SMT and demonstrates that the composition gradient across the vdW gap in the bilayer materials can be another degree of freedom to tune the band gaps without introducing extrinsic elements. Our findings will benefit the material design for small-scale and energy-efficient electronic devices.
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Affiliation(s)
- Qifan Chen
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Mingwei Chen
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Linggang Zhu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Naihua Miao
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
- Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, China
| | - Jian Zhou
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Graeme J Ackland
- School of Physics and Astronomy, University of Edinburgh, Edinburgh EH9 3JZ, United Kingdom
| | - Zhimei Sun
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
- Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, China
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47
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Chowdhury T, Sadler EC, Kempa TJ. Progress and Prospects in Transition-Metal Dichalcogenide Research Beyond 2D. Chem Rev 2020; 120:12563-12591. [DOI: 10.1021/acs.chemrev.0c00505] [Citation(s) in RCA: 74] [Impact Index Per Article: 18.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Affiliation(s)
- Tomojit Chowdhury
- Department of Chemistry, Johns Hopkins University, Baltimore 21218, United States
| | - Erick C. Sadler
- Department of Chemistry, Johns Hopkins University, Baltimore 21218, United States
| | - Thomas J. Kempa
- Department of Chemistry, Johns Hopkins University, Baltimore 21218, United States
- Department of Materials Science and Engineering, Johns Hopkins University, Baltimore 21218, United States
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48
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Thomas A, Resmi AN, Ganguly A, Jinesh KB. Programmable electronic synapse and nonvolatile resistive switches using MoS 2 quantum dots. Sci Rep 2020; 10:12450. [PMID: 32709849 PMCID: PMC7381601 DOI: 10.1038/s41598-020-68822-5] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/02/2020] [Accepted: 06/01/2020] [Indexed: 11/10/2022] Open
Abstract
Brain-inspired computation that mimics the coordinated functioning of neural networks through multitudes of synaptic connections is deemed to be the future of computation to overcome the classical von Neumann bottleneck. The future artificial intelligence circuits require scalable electronic synapse (e-synapses) with very high bit densities and operational speeds. In this respect, nanostructures of two-dimensional materials serve the purpose and offer the scalability of the devices in lateral and vertical dimensions. In this work, we report the nonvolatile bipolar resistive switching and neuromorphic behavior of molybdenum disulfide (MoS2) quantum dots (QD) synthesized using liquid-phase exfoliation method. The ReRAM devices exhibit good resistive switching with an On-Off ratio of 104, with excellent endurance and data retention at a smaller read voltage as compared to the existing MoS2 based memory devices. Besides, we have demonstrated the e-synapse based on MoS2 QD. Similar to our biological synapse, Paired Pulse Facilitation / Depression of short-term memory has been observed in these MoS2 QD based e-synapse devices. This work suggests that MoS2 QD has potential applications in ultra-high-density storage as well as artificial intelligence circuitry in a cost-effective way.
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Affiliation(s)
- Anna Thomas
- Department of Physics, Indian Institute of Space-Science and Technology (IIST), Valiyamala, Thiruvananthapuram, 695547, Kerala, India
| | - A N Resmi
- Department of Physics, Indian Institute of Space-Science and Technology (IIST), Valiyamala, Thiruvananthapuram, 695547, Kerala, India
| | - Akash Ganguly
- Department of Physics, Indian Institute of Space-Science and Technology (IIST), Valiyamala, Thiruvananthapuram, 695547, Kerala, India
| | - K B Jinesh
- Department of Physics, Indian Institute of Space-Science and Technology (IIST), Valiyamala, Thiruvananthapuram, 695547, Kerala, India.
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49
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Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors. NANOMATERIALS 2020; 10:nano10071404. [PMID: 32707647 PMCID: PMC7408462 DOI: 10.3390/nano10071404] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/30/2020] [Revised: 07/14/2020] [Accepted: 07/16/2020] [Indexed: 11/16/2022]
Abstract
The ultimate memristor, which acts as resistive memory and an artificial neural synapse, is made from a single atomic layer. In this manuscript, we present experimental evidence of the memristive properties of a nanopatterned ferroelectric graphene field-effect transistor (FET). The graphene FET has, as a channel, a graphene monolayer transferred onto an HfO2-based ferroelectric material, the channel being nanopatterned with an array of holes with a diameter of 20 nm.
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50
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Liao W, Zhao S, Li F, Wang C, Ge Y, Wang H, Wang S, Zhang H. Interface engineering of two-dimensional transition metal dichalcogenides towards next-generation electronic devices: recent advances and challenges. NANOSCALE HORIZONS 2020; 5:787-807. [PMID: 32129353 DOI: 10.1039/c9nh00743a] [Citation(s) in RCA: 24] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Over the past decade, two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted tremendous research interest for future electronics owing to their atomically thin thickness, compelling properties and various potential applications. However, interface engineering including contact optimization and channel modulations for 2D TMDCs represents fundamental challenges in ultimate performance of ultrathin electronics. This article provides a comprehensive overview of the basic understanding of contacts and channel engineering of 2D TMDCs and emerging electronics benefiting from these varying approaches. In particular, we elucidate multifarious contact engineering approaches such as edge contact, phase engineering and metal transfer to suppress the Fermi level pinning effect at the metal/TMDC interface, various channel treatment avenues such as van der Waals heterostructures, surface charge transfer doping to modulate the device properties, and as well the novel electronics constructed by interface engineering such as diodes, circuits and memories. Finally, we conclude this review by addressing the current challenges facing 2D TMDCs towards next-generation electronics and offering our insights into future directions of this field.
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Affiliation(s)
- Wugang Liao
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China.
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