Uniaxial stress flips the natural quantization axis of a quantum dot for integrated quantum photonics

Approaching a fully-polarized state of nuclear spins in a solid

Magnetic noise of atomic nuclear spins is a major source of decoherence in solid-state spin qubits. In theory, near-unity nuclear spin polarization can eliminate decoherence of the electron spin qubit, while turning the nuclei into a useful quantum information resource. However, achieving sufficiently high nuclear polarizations has remained an evasive goal. Here we implement a nuclear spin polarization protocol which combines strong optical pumping and fast electron tunneling. Nuclear polarizations well above 95% are generated in GaAs semiconductor quantum dots on a timescale of 1 minute. The technique is compatible with standard quantum dot device designs, where highly-polarized nuclear spins can simplify implementations of qubits and quantum memories, as well as offer a testbed for studies of many-body quantum dynamics and magnetism.

Curved GaAs cantilever waveguides for the vertical coupling to photonic integrated circuits

We report the nanofabrication and characterization of optical spot-size converter couplers based on curved GaAs cantilever waveguides. Using the stress mismatch between the GaAs substrate and deposited Cr-Ni-Au strips, single-mode waveguides can be bent out-of-plane in a controllable manner. A stable and vertical orientation of the out-coupler is achieved by locking the spot-size converter at a fixed 90 ∘ angle via short-range forces. The optical transmission is characterized as a function of temperature and polarization, resulting in a broad-band chip-to-fiber coupling extending over 150 nm wavelength bandwidth at cryogenic temperatures, with the lower bound for the coupling efficiency into the TE mode being 16±2% in the interval 900-1050 nm. The methods reported here are fully compatible with quantum photonic integrated circuit technology with quantum dot emitters, and open opportunities to design novel photonic devices with enhanced functionality.

Extra-High Mechanical and Phononic Anisotropy in Black Phosphorus Blisters

Strain is an effective strategy to modulate the electrical, optical, and optoelectronic properties of 2D materials. Conventional circular blisters could generate a biaxial stretching of 2D membranes with notable strain gradients along the hoop direction. However, such a deformation mode cannot be utilized to investigate mechanical responses of in-plane anisotropic 2D materials, for example, black phosphorus (BP), due to its crystallographic orientation dependence. Here, a novel rectangular-shaped bulge device is developed to uniaxially stretch the membrane, and further provide a promising platform to detect orientation-dependent mechanical and optical properties of anisotropic 2D materials. Impressively, the derived anisotropic ratio of Young's modulus of BP flakes is much higher than the values obtained via the nanoindentation method. The extra-high strain-dependent phononic anisotropy in Raman modes along different crystalline orientations is also observed. The designed rectangular budge device expands the uniaxial deformation methods available, allowing to explore the mechanical, and strain-dependent physical properties of other anisotropic 2D materials more broadly.

Strain Engineering of Low-Dimensional Materials for Emerging Quantum Phenomena and Functionalities

Recent discoveries of exotic physical phenomena, such as unconventional superconductivity in magic-angle twisted bilayer graphene, dissipationless Dirac fermions in topological insulators, and quantum spin liquids, have triggered tremendous interest in quantum materials. The macroscopic revelation of quantum mechanical effects in quantum materials is associated with strong electron-electron correlations in the lattice, particularly where materials have reduced dimensionality. Owing to the strong correlations and confined geometry, altering atomic spacing and crystal symmetry via strain has emerged as an effective and versatile pathway for perturbing the subtle equilibrium of quantum states. This review highlights recent advances in strain-tunable quantum phenomena and functionalities, with particular focus on low-dimensional quantum materials. Experimental strategies for strain engineering are first discussed in terms of heterogeneity and elastic reconfigurability of strain distribution. The nontrivial quantum properties of several strain-quantum coupled platforms, including 2D van der Waals materials and heterostructures, topological insulators, superconducting oxides, and metal halide perovskites, are next outlined, with current challenges and future opportunities in quantum straintronics followed. Overall, strain engineering of quantum phenomena and functionalities is a rich field for fundamental research of many-body interactions and holds substantial promise for next-generation electronics capable of ultrafast, dissipationless, and secure information processing and communications.

Charge Tunable GaAs Quantum Dots in a Photonic n-i-p Diode

In this submission, we discuss the growth of charge-controllable GaAs quantum dots embedded in an n-i-p diode structure, from the perspective of a molecular beam epitaxy grower. The QDs show no blinking and narrow linewidths. We show that the parameters used led to a bimodal growth mode of QDs resulting from low arsenic surface coverage. We identify one of the modes as that showing good properties found in previous work. As the morphology of the fabricated QDs does not hint at outstanding properties, we attribute the good performance of this sample to the low impurity levels in the matrix material and the ability of n- and p-doped contact regions to stabilize the charge state. We present the challenges met in characterizing the sample with ensemble photoluminescence spectroscopy caused by the photonic structure used. We show two straightforward methods to overcome this hurdle and gain insight into QD emission properties.

Bright solid-state sources for single photons with orbital angular momentum

Photons that have a helical phase front, that is, twisted photons, can carry a discrete, in principle, unlimited, but quantized amount of orbital angular momentum (OAM). Hence, twisted single photons constitute a high-dimensional quantum system with information-processing abilities beyond those of two-level single-photon qubits. To date, the generation of single photons carrying OAM has relied on a non-linear process in bulk crystals, for example, spontaneous parametric down-conversion, which limits both the efficiency and the scalability of the source. Here, we present a bright solid-state source of single photons in an OAM superposition state with a single-photon purity of g⁽²⁾(0) = 0.115(1) and a collection efficiency of 23(4)%. The mode purity of the single-photon OAM states is further examined via projection measurements. Future developments of integrated quantum photonic devices with pure OAM states as an additional degree of freedom may enable high-dimensional quantum information processing.

Polarization Anisotropies in Strain-Free, Asymmetric, and Symmetric Quantum Dots Grown by Droplet Epitaxy

We provide an extensive and systematic investigation of exciton dynamics in droplet epitaxial quantum dots comparing the cases of (311)A, (001), and (111)A surfaces. Despite a similar s-shell exciton structure common to the three cases, the absence of a wetting layer for (311)A and (111)A samples leads to a larger carrier confinement compared to (001), where a wetting layer is present. This leads to a more pronounced dependence of the binding energies of s-shell excitons on the quantum dot size and to the strong anti-binding character of the positive-charged exciton for smaller quantum dots. In-plane geometrical anisotropies of (311)A and (001) quantum dots lead to a large electron-hole fine interaction (fine structure splitting (FSS) ∼100 μeV), whereas for the three-fold symmetric (111)A counterpart, this figure of merit is reduced by about one order of magnitude. In all these cases, we do not observe any size dependence of the fine structure splitting. Heavy-hole/light-hole mixing is present in all the studied cases, leading to a broad spread of linear polarization anisotropy (from 0 up to about 50%) irrespective of surface orientation (symmetry of the confinement), fine structure splitting, and nanostructure size. These results are important for the further development of ideal single and entangled photon sources based on semiconductor quantum dots.

Nuclear spin quantum register in an optically active semiconductor quantum dot

Epitaxial quantum dots (QDs) have long been identified as promising charge spin qubits offering an efficient interface to quantum light and advanced semiconductor nanofabrication technologies. However, charge spin coherence is limited by interaction with the nanoscale ensemble of atomic nuclear spins, which is particularly problematic in strained self-assembled dots. Here, we use strain-free GaAs/AlGaAs QDs, demonstrating a fully functioning two-qubit quantum register using the nanoscale ensemble of arsenic quadrupolar nuclear spins as its hardware. Tailored radio-frequency pulses allow quantum state storage for up to 20 ms, and are used for few-microsecond single-qubit and two-qubit control gates with fidelities exceeding 97%. Combining long coherence and high-fidelity control with optical initialization and readout, we implement benchmark quantum computations such as Grover's search and the Deutsch-Jozsa algorithm. Our results identify QD nuclei as a potential quantum information resource, which can complement charge spins and light particles in future QD circuits.

Geometry Tailoring of Emission from Semiconductor Nanowires and Nanocones

Semiconductor nanowires are of interest as light emitters in applications such as light-emitting diodes and single-photon sources. Due to the three-dimensional geometry in combination with a size comparable to the wavelength of the emitted light, nanowires have shown strong scattering effects for the emitted light. Here, we demonstrate with electromagnetic modeling that the emission properties of nanowires/nanocones show a complicated dependence on the geometry of the nanowire/nanocone, the shape and position of the emitter region, and the polarization of the emitter. We show that with proper design, the extraction efficiency can close in on 80% for as-grown single nanowires/nanocones. Importantly, we demonstrate how the internal quantum efficiency of the emitter plays a large role in the design process. A considerably different geometry design approach should be undertaken at low and high internal quantum efficiency. Due to the complicated design optimization, we strongly recommend the use of electromagnetic modeling of the emission to give guidance for suitable designs before starting the fabrication and processing of nanowire/nanocone-based light emitters.

In-Fiber Production of Laser-Structured Stress-Mediated Semiconductor Particles

The ability to generate stressed semiconductor particles is of great importance in the development of tunable semiconductor and photonic devices. However, existing methods including both bottom-up synthesis and top-down fabrication for producing semiconductor particles are inherently free of stress effects. Here, we report a simple approach to generate controllable stress effects on both encapsulated and free-standing semiconductor particles using laser-structured in-fiber materials engineering. The physical mechanism of thermally induced in-fiber built-in stress is investigated, and the feasibility of precisely tuning the stress state during the particle formation is experimentally demonstrated by controlling the laser treatment. Gigapascal-level built-in stress, which is a sufficiently strong stimulus to enable inelastic deformations on the fabricated semiconductor particles, has been achieved via this approach. Both encapsulated and free-standing stressed semiconductor particles are generated for a wide range of in-fiber and out-fiber optoelectronic and biomedical applications.

Collective Quantum Memory Activated by a Driven Central Spin

Coupling a qubit coherently to an ensemble is the basis for collective quantum memories. A single driven electron in a quantum dot can deterministically excite low-energy collective modes of a nuclear spin ensemble in the presence of lattice strain. We propose to gate a quantum state transfer between this central electron and these low-energy excitations-spin waves-in the presence of a strong magnetic field, where the nuclear coherence time is long. We develop a microscopic theory capable of calculating the exact time evolution of the strained electron-nuclear system. With this, we evaluate the operation of quantum state storage and show that fidelities up to 90% can be reached with a modest nuclear polarization of only 50%. These findings demonstrate that strain-enabled nuclear spin waves are a highly suitable candidate for quantum memory.

Slow and fast single photons from a quantum dot interacting with the excited state hyperfine structure of the Cesium D1-line

Hybrid interfaces between distinct quantum systems play a major role in the implementation of quantum networks. Quantum states have to be stored in memories to synchronize the photon arrival times for entanglement swapping by projective measurements in quantum repeaters or for entanglement purification. Here, we analyze the distortion of a single-photon wave packet propagating through a dispersive and absorptive medium with high spectral resolution. Single photons are generated from a single In(Ga)As quantum dot with its excitonic transition precisely set relative to the Cesium D₁ transition. The delay of spectral components of the single-photon wave packet with almost Fourier-limited width is investigated in detail with a 200 MHz narrow-band monolithic Fabry-Pérot resonator. Reflecting the excited state hyperfine structure of Cesium, “slow light” and “fast light” behavior is observed. As a step towards room-temperature alkali vapor memories, quantum dot photons are delayed for 5 ns by strong dispersion between the two 1.17 GHz hyperfine-split excited state transitions. Based on optical pumping on the hyperfine-split ground states, we propose a simple, all-optically controllable delay for synchronization of heralded narrow-band photons in a quantum network.

Scalable in operando strain tuning in nanophotonic waveguides enabling three-quantum-dot superradiance

The quest for an integrated quantum optics platform has motivated the field of semiconductor quantum dot research for two decades. Demonstrations of quantum light sources, single photon switches, transistors and spin-photon interfaces have become very advanced. Yet the fundamental problem that every quantum dot is different prevents integration and scaling beyond a few quantum dots. Here, we address this challenge by patterning strain via local phase transitions to selectively tune individual quantum dots that are embedded in a photonic architecture. The patterning is implemented with in operando laser crystallization of a thin HfO₂ film 'sheath' on the surface of a GaAs waveguide. Using this approach, we tune InAs quantum dot emission energies over the full inhomogeneous distribution with a step size down to the homogeneous linewidth and a spatial resolution better than 1 µm. Using these capabilities, we tune multiple quantum dots into resonance within the same waveguide and demonstrate a quantum interaction via superradiant emission from three quantum dots.

Quantum Frequency Conversion of a Quantum Dot Single-Photon Source on a Nanophotonic Chip

Single self-assembled InAs/GaAs quantum dots are promising bright sources of indistinguishable photons for quantum information science. However, their distribution in emission wavelength, due to inhomogeneous broadening inherent to their growth, has limited the ability to create multiple identical sources. Quantum frequency conversion can overcome this issue, particularly if implemented using scalable chip-integrated technologies. Here, we report the first demonstration of quantum frequency conversion of a quantum dot single-photon source on a silicon nanophotonic chip. Single photons from a quantum dot in a micropillar cavity are shifted in wavelength with an on-chip conversion efficiency ≈ 12 %, limited by the linewidth of the quantum dot photons. The intensity autocorrelation function g ( 2 ) ( τ ) for the frequency-converted light is antibunched with g ( 2 ) ( 0 ) = 0.290 ± 0.030 , compared to the before-conversion value g ( 2 ) ( 0 ) = 0.080 ± 0.003 . We demonstrate the suitability of our frequency conversion interface as a resource for quantum dot sources by characterizing its effectiveness across a wide span of input wavelengths (840 nm to 980 nm), and its ability to achieve tunable wavelength shifts difficult to obtain by other approaches.

Strain-Tunable Quantum Integrated Photonics

Semiconductor quantum dots are crucial parts of the photonic quantum technology toolbox because they show excellent single-photon emission properties in addition to their potential as solid-state qubits. Recently, there has been an increasing effort to deterministically integrate single semiconductor quantum dots into complex photonic circuits. Despite rapid progress in the field, it remains challenging to manipulate the optical properties of waveguide-integrated quantum emitters in a deterministic, reversible, and nonintrusive manner. Here we demonstrate a new class of hybrid quantum photonic circuits combining III-V semiconductors, silicon nitride, and piezoelectric crystals. Using a combination of bottom-up, top-down, and nanomanipulation techniques, we realize strain tuning of a selected, waveguide-integrated, quantum emitter and a planar integrated optical resonator. Our findings are an important step toward realizing reconfigurable quantum-integrated photonics, with full control over the quantum sources and the photonic circuit.