All carbon materials pn diode

Near Zero-Threshold Voltage P-N Junction Diodes Based on Super-Semiconducting Nanostructured Ag/Al Arrays

Semiconductor devices are currently one of the most common energy consumption devices. Significantly reducing the energy consumption of semiconductor devices with advanced energy-efficient technologies is highly desirable. The discovery of super-semiconductors (SSCs) based on metallic bi-layer shell arrays provides an opportunity to realize ultra-low-power consumption semiconductor devices. As an example, the achievement of near zero-threshold voltage in p-n junction diodes based on super-semiconducting nanostructured Ag/Al arrays is reported, realizing ultra-low-power p-n junction diodes: ≈3 W per trillion diodes with a working voltage of 1 V or 30 mW per trillion diodes with an operating voltage of 0.1 V. In addition, the p-n junction diodes exhibit a high breakdown field of ≈1.1 × 10⁶  V cm^-1 , similar to that of SiC and GaN, due to a robust built-in field driven by infrared light photons. The SSC p-n diodes with near zero-threshold voltage and high breakdown field allow access to ultra-low-power semiconducting transistors, integrated circuits, chips, etc.

A Pseudocapacitor Diode Based on Ion-Selective Surface Redox Effect

Supercapacitor diode (CAPode) is a novel device that integrates ion diode functionality into a conventional electrical double-layer capacitor and is expected to have great applications in emerging fields such as signal propagation, microcircuit rectification, logic operations, and neuromorphology. Here, a brand new pseudocapacitor diode is reported that has both high charge storage (50.2 C g^-1 at 20 mV s^-1 ) and high rectification (the rectification ratio of 0.79 at 200 mV s^-1 ) properties, which is realized by the ion-selective surface redox reaction of spinel ZnCo₂ O₄ in aqueous alkaline electrolyte. Furthermore, an application of the integrated device is demonstrated in the logic gate of circuit system to realize the logic operations of "AND" and "OR". This work not only expands the types of CAPodes, but also provides a train of thought for constructing high-performance capacitive ionic diodes.

Fully rubbery Schottky diode and integrated devices

A fully rubbery stretchable diode, particularly entirely based on stretchy materials, is a crucial device for stretchable integrated electronics in a wide range of applications, ranging from energy to biomedical, to integrated circuits, and to robotics. However, its development has been very nascent. Here, we report a fully rubbery Schottky diode constructed all based on stretchable electronic materials, including a liquid metal cathode, a rubbery semiconductor, and a stretchable anode. The rubbery Schottky diode exhibited a forward current density of 6.99 × 10-3 A/cm2 at 5 V and a rectification ratio of 8.37 × 104 at ±5 V. Stretchy rectifiers and logic gates based on the rubbery Schottky diodes were developed and could retain their electrical performance even under 30% tensile stretching. With the rubbery diodes, fully rubbery integrated electronics, including an active matrix multiplexed tactile sensor and a triboelectric nanogenerator-based power management system, are further demonstrated.

Pure Graphene Oxide Vertical p-n Junction with Remarkable Rectification Effect

Graphene p-n junctions have important applications in the fields of optical interconnection and low-power integrated circuits. Most current research is based on the lateral p-n junction prepared by chemical doping and other methods. Here, we report a new type of pure graphene oxide (pGO) vertical p-n junctions which do not dope any other elements but only controls the oxygen content of GO. The I-V curve of the pGO vertical p-n junction demonstrates a remarkable rectification effect. In addition, the pGO vertical p-n junction shows stability of its rectification characteristic over long-term storage for six months when sealed and stored in a PE bag. Moreover, the pGO vertical p-n junctions have obvious photoelectric response and various rectification effects with different thicknesses and an oxygen content of GO, humidity, and temperature. Hall effect test results show that rGO is an n-type semiconductor; theoretical calculations and research show that GO is generally a p-type semiconductor with a bandgap, thereby forming a p-n junction. Our work provides a method for preparing undoped GO vertical p-n junctions with advantages such as simplicity, convenience, and large-scale industrial preparation. Our work demonstrates great potential for application in electronics and highly sensitive sensors.

Construction of Supercapacitor-Based Ionic Diodes with Adjustable Bias Directions by Using Poly(ionic liquid) Electrolytes

The newly emerging supercapacitor-diode (CAPode), integrating the characteristics of a diode into an electrical-double-layer capacitor, can be employed to extend conventional supercapacitors to new technological applications and may play a crucial role in grid stabilization, signal propagation, and logic operations. However, the reported CAPodes have only been able to realize charge storage in the positive-bias direction. Here, bias-direction-adjustable CAPodes realized by using a polycation-based ionic liquid (IL) or a polyanion-based IL as electrolyte in an asymmetric carbon-based supercapacitor architecture are proposed. The resulting CAPodes exhibit charge-storage function at only the positive- or negative-bias direction with a high rectification ratio (≈80% for rectification ratio II, RR_II ) and an outstanding cycling life (4500 cycles), representing a crucial breakthrough for designing high-performance capacitive ionic diodes.

Counterion Gradients around Charged Metal Nanoparticles Enabling Basic Electronics without Semiconductors

In modern electronics, metals have not occupied the same role as semiconductors because their electrical properties are largely independent of the potential that is applied to them. However, this limitation of bulk metals can be overcome at the nanoscale, where metal nanoparticles functionalized with charged organic ligands can have highly tunable electrical characteristics enabling the fabrication of basic electronic components. Here, we show the recent progress on the design and construction of the basic electronic components (e.g., diodes and transistors) based on charged metal nanoparticles and the coupled transport of ionic and electronic charges within nanoparticle layers (Poisson and Nernst-Planck diffusion equations, PNP model) and how to assemble these electronic components and various metal nanoparticle sensors to achieve basic computations and "chemoelectronics". Meanwhile, we envision the future research directions and a possible breakthrough in metal nanoparticle electronics.

PN junction and band to band tunneling in carbon nanotube transistors at room temperature

We demonstrate band to band tunneling (BTBT) in a carbon nanotube (CNT) field effect transistor. We employ local electrostatic doping assisted by charged traps within the oxide to produce an intramolecular PN junction along the CNT. These characteristics apply for both metallic (m-CNTs) and semiconducting (SC-CNTs) CNTs. For m-CNTs we present a hysteretic transfer characteristic which originates from local electrostatic doping in the middle segment of the CNT. This controlled doping is reversible and results in formation and destruction of a PN junction along the CNT channel. For SC-CNTs we observe BTBT, and analysis based on the WKB approximation reveals a very narrow depletion region and high transmission probability at the optimal energy bands overlap. These results may assist in developing a non-volatile one-dimensional PN junction memory cell and designing a tunneling based field effect transistor.

Contact resistance and mobility in back-gate graphene transistors

The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. High contact resistance can be detrimental to device performance and spoil the intrinsic great properties of graphene. In this paper, we fabricate back-gate graphene field-effect transistors with different geometries to study the contact and channel resistance as well as the carrier mobility as a function of gate voltage and temperature. We apply the transfer length method and the y-function method showing that the two approaches can complement each other to evaluate the contact resistance and prevent artifacts in the estimation of carrier mobility dependence on the gate-voltage. We find that the gate voltage modulates both the contact and the channel resistance in a similar way but does not change the carrier mobility. We also show that raising the temperature lowers the carrier mobility, has a negligible effect on the contact resistance, and can induce a transition from a semiconducting to a metallic behavior of the graphene sheet resistance, depending on the applied gate voltage. Finally, we show that eliminating the detrimental effects of the contact resistance on the transistor channel current almost doubles the carrier field-effect mobility and that a competitive contact resistance as low as 700 Ω·μm can be achieved by the zig-zag shaping of the Ni contact.