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Parate SK, Vura S, Pal S, Khandelwal U, Sandilya Ventrapragada RS, Rai RK, Molleti SH, Kumar V, Patil G, Jain M, Mallya A, Ahmadi M, Kooi B, Avasthi S, Ranjan R, Raghavan S, Chandorkar S, Nukala P. Giant electrostriction-like response from defective non-ferroelectric epitaxial BaTiO 3 integrated on Si (100). Nat Commun 2024; 15:1428. [PMID: 38365898 PMCID: PMC10873356 DOI: 10.1038/s41467-024-45903-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/20/2023] [Accepted: 02/01/2024] [Indexed: 02/18/2024] Open
Abstract
Lead-free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoelectromechanical devices and applications. Defect-engineered electrostriction has recently been gaining popularity to obtain enhanced electromechanical responses at sub 100 Hz frequencies. Here, we report record values of electrostrictive strain coefficients (M31) at frequencies as large as 5 kHz (1.04×10-14 m2/V2 at 1 kHz, and 3.87×10-15 m2/V2 at 5 kHz) using A-site and oxygen-deficient barium titanate thin-films, epitaxially integrated onto Si. The effect is robust and retained upon cycling upto 6 million times. Our perovskite films are non-ferroelectric, exhibit a different symmetry compared to stoichiometric BaTiO3 and are characterized by twin boundaries and nano polar-like regions. We show that the dielectric relaxation arising from the defect-induced features correlates well with the observed giant electrostriction-like response. These films show large coefficient of thermal expansion (2.36 × 10-5/K), which along with the giant M31 implies a considerable increase in the lattice anharmonicity induced by the defects. Our work provides a crucial step forward towards formulating guidelines to engineer large electromechanical responses even at higher frequencies in lead-free thin films.
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Affiliation(s)
- Shubham Kumar Parate
- Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India.
| | - Sandeep Vura
- Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India.
| | - Subhajit Pal
- Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India
- School of Engineering and Materials Science, Queen Mary University of London, London, E1 4NS, United Kingdom
| | - Upanya Khandelwal
- Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India
| | | | - Rajeev Kumar Rai
- Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India
- Materials Science and Engineering, University of Pennsylvania, 3231 Walnut Street, Philadelphia, PA, 19104, USA
| | - Sri Harsha Molleti
- Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India
| | - Vishnu Kumar
- Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India
| | - Girish Patil
- Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India
| | - Mudit Jain
- Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India
| | - Ambresh Mallya
- Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India
| | - Majid Ahmadi
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, 9747AG, The Netherlands
| | - Bart Kooi
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, 9747AG, The Netherlands
- CogniGron center, University of Groningen, Groningen, 9747 AG, The Netherlands
| | - Sushobhan Avasthi
- Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India
| | - Rajeev Ranjan
- Materials Engineering, Indian Institute of Science, Bengaluru, 560012, India
| | - Srinivasan Raghavan
- Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India
| | - Saurabh Chandorkar
- Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India
| | - Pavan Nukala
- Center for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India.
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Gradauskaite E, Meisenheimer P, Müller M, Heron J, Trassin M. Multiferroic heterostructures for spintronics. PHYSICAL SCIENCES REVIEWS 2020. [DOI: 10.1515/psr-2019-0072] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/06/2023]
Abstract
AbstractFor next-generation technology, magnetic systems are of interest due to the natural ability to store information and, through spin transport, propagate this information for logic functions. Controlling the magnetization state through currents has proven energy inefficient. Multiferroic thin-film heterostructures, combining ferroelectric and ferromagnetic orders, hold promise for energy efficient electronics. The electric field control of magnetic order is expected to reduce energy dissipation by 2–3 orders of magnitude relative to the current state-of-the-art. The coupling between electrical and magnetic orders in multiferroic and magnetoelectric thin-film heterostructures relies on interfacial coupling though magnetic exchange or mechanical strain and the correlation between domains in adjacent functional ferroic layers. We review the recent developments in electrical control of magnetism through artificial magnetoelectric heterostructures, domain imprint, emergent physics and device paradigms for magnetoelectric logic, neuromorphic devices, and hybrid magnetoelectric/spin-current-based applications. Finally, we conclude with a discussion of experiments that probe the crucial dynamics of the magnetoelectric switching and optical tuning of ferroelectric states towards all-optical control of magnetoelectric switching events.
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Affiliation(s)
- Elzbieta Gradauskaite
- Department of Materials , ETH Zurich , Vladimir-Prelog-Weg 4 , Zurich , 8093 Switzerland
| | - Peter Meisenheimer
- Department of Materials Science and Engineering , University of Michigan , Ann Arbor , MI 48109 USA
| | - Marvin Müller
- Department of Materials , ETH Zurich , Vladimir-Prelog-Weg 4 , Zurich , 8093 Switzerland
| | - John Heron
- Department of Materials Science and Engineering , University of Michigan , Ann Arbor , MI 48109 USA
| | - Morgan Trassin
- Department of Materials , ETH Zurich , Vladimir-Prelog-Weg 4 , Zurich , 8093 Switzerland
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Domain-wall pinning and defect ordering in BiFeO 3 probed on the atomic and nanoscale. Nat Commun 2020; 11:1762. [PMID: 32273515 PMCID: PMC7145836 DOI: 10.1038/s41467-020-15595-0] [Citation(s) in RCA: 29] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/22/2019] [Accepted: 03/06/2020] [Indexed: 11/08/2022] Open
Abstract
Electro-mechanical interactions between charged point defects and domain walls play a key role in the functional properties of bulk and thin-film ferroelectrics. While for perovskites the macroscopic implications of the ordering degree of defects on domain-wall pinning have been reported, atomistic details of these mechanisms remain unclear. Here, based on atomic and nanoscale analyses, we propose a pinning mechanism associated with conductive domain walls in BiFeO3, whose origin lies in the dynamic coupling of the p-type defects gathered in the domain-wall regions with domain-wall displacements under applied electric field. Moreover, we confirm that the degree of defect ordering at the walls, which affect the domain-wall conductivity, can be tuned by the cooling rate used during the annealing, allowing us to determine how this ordering affects the atomic structure of the walls. The results are useful in the design of the domain-wall architecture and dynamics for emerging nanoelectronic and bulk applications.
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Vaughan GBM, Baker R, Barret R, Bonnefoy J, Buslaps T, Checchia S, Duran D, Fihman F, Got P, Kieffer J, Kimber SAJ, Martel K, Morawe C, Mottin D, Papillon E, Petitdemange S, Vamvakeros A, Vieux JP, Di Michiel M. ID15A at the ESRF - a beamline for high speed operando X-ray diffraction, diffraction tomography and total scattering. JOURNAL OF SYNCHROTRON RADIATION 2020; 27:515-528. [PMID: 32153293 PMCID: PMC7842212 DOI: 10.1107/s1600577519016813] [Citation(s) in RCA: 47] [Impact Index Per Article: 11.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/05/2019] [Accepted: 12/16/2019] [Indexed: 05/09/2023]
Abstract
ID15A is a newly refurbished beamline at the ESRF devoted to operando and time-resolved diffraction and imaging, total scattering and diffraction computed tomography. The beamline is optimized for rapid alternation between the different techniques during a single operando experiment in order to collect complementary data on working systems. The high available energy (up to 120 keV) means that even bulky and highly absorbing systems may be studied. The beamline is equipped with optimized focusing optics and a photon-counting CdTe pixel detector, allowing for both unprecedented data quality at high energy and for very rapid triggered experiments. A large choice of imaging detectors and ancillary probes and sample environments is also available.
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Affiliation(s)
- Gavin B. M. Vaughan
- ESRF – The European Synchrotron, 71 Avenue des Martyrs, 38000 Grenoble, France
| | - Robert Baker
- ESRF – The European Synchrotron, 71 Avenue des Martyrs, 38000 Grenoble, France
| | - Raymond Barret
- ESRF – The European Synchrotron, 71 Avenue des Martyrs, 38000 Grenoble, France
| | - Julien Bonnefoy
- ESRF – The European Synchrotron, 71 Avenue des Martyrs, 38000 Grenoble, France
| | - Thomas Buslaps
- ESRF – The European Synchrotron, 71 Avenue des Martyrs, 38000 Grenoble, France
| | - Stefano Checchia
- ESRF – The European Synchrotron, 71 Avenue des Martyrs, 38000 Grenoble, France
| | - Denis Duran
- ESRF – The European Synchrotron, 71 Avenue des Martyrs, 38000 Grenoble, France
| | | | - Pierrick Got
- ESRF – The European Synchrotron, 71 Avenue des Martyrs, 38000 Grenoble, France
| | - Jerôme Kieffer
- ESRF – The European Synchrotron, 71 Avenue des Martyrs, 38000 Grenoble, France
| | - Simon A. J. Kimber
- ESRF – The European Synchrotron, 71 Avenue des Martyrs, 38000 Grenoble, France
| | - Keith Martel
- ESRF – The European Synchrotron, 71 Avenue des Martyrs, 38000 Grenoble, France
| | - Christian Morawe
- ESRF – The European Synchrotron, 71 Avenue des Martyrs, 38000 Grenoble, France
| | - Denis Mottin
- ESRF – The European Synchrotron, 71 Avenue des Martyrs, 38000 Grenoble, France
| | - Emanuel Papillon
- ESRF – The European Synchrotron, 71 Avenue des Martyrs, 38000 Grenoble, France
| | | | - Antonios Vamvakeros
- ESRF – The European Synchrotron, 71 Avenue des Martyrs, 38000 Grenoble, France
- Finden Ltd, Building R71, Rutherford Appleton Laboratory, Harwell, Oxford OX11 0QX, UK
| | - Jean-Phillipe Vieux
- ESRF – The European Synchrotron, 71 Avenue des Martyrs, 38000 Grenoble, France
| | - Marco Di Michiel
- ESRF – The European Synchrotron, 71 Avenue des Martyrs, 38000 Grenoble, France
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