1
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Han B, Samorì P. Engineering the Interfacing of Molecules with 2D Transition Metal Dichalcogenides: Enhanced Multifunctional Electronics. Acc Chem Res 2024. [PMID: 39159399 DOI: 10.1021/acs.accounts.4c00338] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/21/2024]
Abstract
ConspectusEngineering all interfaces between different components in electronic devices is the key to control and optimize fundamental physical processes such as charge injection at metal-semiconductor interfaces, gate modulation at the dielectric-semiconductor interface, and carrier modulation at semiconductor-environment interfaces. The use of two-dimensional (2D) crystals as semiconductors, by virtue of their atomically flat dangling bond-free structures, can facilitate the tailoring of such interfaces effectively. In this context, 2D transition metal dichalcogenides (TMDs) have garnered tremendous attention over the past two decades owing to their exclusive and outstanding physical and chemical characteristics such as their strong light-matter interactions and high charge mobility. These properties position them as promising building blocks for next-generation semiconductor materials. The combination of their large specific surface area, unique electronic structure, and properties highly sensitive to environmental changes makes 2D TMDs appealing platforms for applications in optoelectronics and sensing. While a broad arsenal of TMDs has been made available that exhibit a variety of electronic properties, the latter are unfortunately hardly tunable. To overcome this problem, the controlled functionalization of TMDs with molecules and assemblies thereof represents a most powerful strategy to finely tune their surface characteristics for electronics. Such functionalization can be used not only to encapsulate the electronic material, therefore enhancing its stability in air, but also to impart dynamic, stimuli-responsive characteristics to TMDs and to selectively recognize the presence of a given analyte in the environment, demonstrating unprecedented application potential.In this Account, we highlight the most enlightening recent progress made on the interface engineering in 2D TMD-based electronic devices via covalent and noncovalent functionalization with suitably designed molecules, underlining the remarkable synergies achieved. While electrode functionalization allows modulating charge injection and extraction, the functionalization of the dielectric substrate enables tuning of the carrier concentration in the device channel, and the functionalization of the upper surface of 2D TMDs allows screening the interaction with the environment and imparts molecular functionality to the devices, making them versatile for various applications. The tailored interfaces enable enhanced device performance and open up avenues for practical applications. This Account specifically focuses on our recent endeavor in the unusual properties conferred to 2D TMDs through the functionalization of their interfaces with stimuli-responsive molecules or molecular assemblies. This includes electrode-functionalized devices with modulable performance and charge carriers, molecular-bridged TMD network devices with overall enhanced electrical properties, sensor devices that are highly responsive to changes in the external environment, in particular, electrochemically switchable transistors that react to external electrochemical signals, optically switchable transistors that are sensitive to external light inputs, and multiresponsive transistors that simultaneously respond to multiple external stimuli including optical, electrical, redox, thermal, and magnetic inputs and their application in the development of unprecedented memories, artificial synapses, and logic inverters. By presenting the current challenges, opportunities, and prospects in this blooming research field, we will discuss the powerful integration of such strategies for next-generation electronic digital devices and logic circuitries, outlining future directions and potential breakthroughs in interface engineering.
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Affiliation(s)
- Bin Han
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
| | - Paolo Samorì
- Université de Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
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2
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Sabury S, Xu Z, Saiev S, Davies D, Österholm AM, Rinehart JM, Mirhosseini M, Tong B, Kim S, Correa-Baena JP, Coropceanu V, Jurchescu OD, Brédas JL, Diao Y, Reynolds JR. Non-covalent planarizing interactions yield highly ordered and thermotropic liquid crystalline conjugated polymers. MATERIALS HORIZONS 2024; 11:3352-3363. [PMID: 38686501 DOI: 10.1039/d3mh01974h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
Controlling the multi-level assembly and morphological properties of conjugated polymers through structural manipulation has contributed significantly to the advancement of organic electronics. In this work, a redox active conjugated polymer, TPT-TT, composed of alternating 1,4-(2-thienyl)-2,5-dialkoxyphenylene (TPT) and thienothiophene (TT) units is reported with non-covalent intramolecular S⋯O and S⋯H-C interactions that induce controlled main-chain planarity and solid-state order. As confirmed by density functional theory (DFT) calculations, these intramolecular interactions influence the main chain conformation, promoting backbone planarization, while still allowing dihedral rotations at higher kinetic energies (higher temperature), and give rise to temperature-dependent aggregation properties. Thermotropic liquid crystalline (LC) behavior is confirmed by cross-polarized optical microscopy (CPOM) and closely correlated with multiple thermal transitions observed by differential scanning calorimetry (DSC). This LC behavior allows us to develop and utilize a thermal annealing treatment that results in thin films with notable long-range order, as shown by grazing-incidence X-ray diffraction (GIXD). Specifically, we identified a first LC phase, ranging from 218 °C to 107 °C, as a nematic phase featuring preferential face-on π-π stacking and edge-on lamellar stacking exhibiting a large extent of disorder and broad orientation distribution. A second LC phase is observed from 107 °C to 48 °C, as a smectic A phase featuring sharp, highly ordered out-of-plane lamellar stacking features and sharp tilted backbone stacking peaks, while the structure of a third LC phase with a transition at 48 °C remains unclear, but resembles that of the solid state at ambient temperature. Furthermore, the significance of thermal annealing is evident in the ∼3-fold enhancement of the electrical conductivity of ferric tosylate-doped annealed films reaching 55 S cm-1. More importantly, thermally annealed TPT-TT films exhibit both a narrow distribution of charge-carrier mobilities (1.4 ± 0.1) × 10-2 cm2 V-1 s-1 along with a remarkable device yield of 100% in an organic field-effect transistor (OFET) configuration. This molecular design approach to obtain highly ordered conjugated polymers in the solid state affords a deeper understanding of how intramolecular interactions and repeat-unit symmetry impact liquid crystallinity, solution aggregation, solution to solid-state transformation, solid-state morphology, and ultimately device applications.
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Affiliation(s)
- Sina Sabury
- School of Chemistry and Biochemistry, School of Materials Science and Engineering, Center for Organic Photonics and Electronics, Georgia Tech Polymer Network, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
| | - Zhuang Xu
- Department of Chemical and Biomolecular Engineering, Department of Chemistry, Beckman Institute for Advanced Science and Technology, University of Illinois Urbana-Champaign, 600 S. Mathews Avenue, Urbana, Illinois 61801, USA
| | - Shamil Saiev
- Department of Chemistry and Biochemistry, The University of Arizona, Tucson, AZ 85721-0041, USA
| | - Daniel Davies
- Department of Chemical and Biomolecular Engineering, Department of Chemistry, Beckman Institute for Advanced Science and Technology, University of Illinois Urbana-Champaign, 600 S. Mathews Avenue, Urbana, Illinois 61801, USA
| | - Anna M Österholm
- School of Chemistry and Biochemistry, School of Materials Science and Engineering, Center for Organic Photonics and Electronics, Georgia Tech Polymer Network, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
| | - Joshua M Rinehart
- School of Chemistry and Biochemistry, School of Materials Science and Engineering, Center for Organic Photonics and Electronics, Georgia Tech Polymer Network, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
| | - Motahhare Mirhosseini
- Department of Physics and Center for Functional Materials, Wake Forest University, Winston-Salem, NC 27109, USA
| | - Benedict Tong
- School of Chemistry and Biochemistry, School of Materials Science and Engineering, Center for Organic Photonics and Electronics, Georgia Tech Polymer Network, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
| | - Sanggyun Kim
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
| | - Juan-Pablo Correa-Baena
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
| | - Veaceslav Coropceanu
- Department of Chemistry and Biochemistry, The University of Arizona, Tucson, AZ 85721-0041, USA
| | - Oana D Jurchescu
- Department of Physics and Center for Functional Materials, Wake Forest University, Winston-Salem, NC 27109, USA
| | - Jean-Luc Brédas
- Department of Chemistry and Biochemistry, The University of Arizona, Tucson, AZ 85721-0041, USA
| | - Ying Diao
- Department of Chemical and Biomolecular Engineering, Department of Chemistry, Beckman Institute for Advanced Science and Technology, University of Illinois Urbana-Champaign, 600 S. Mathews Avenue, Urbana, Illinois 61801, USA
| | - John R Reynolds
- School of Chemistry and Biochemistry, School of Materials Science and Engineering, Center for Organic Photonics and Electronics, Georgia Tech Polymer Network, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
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3
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Alarcon-Espejo P, Sarabia-Riquelme R, Matrone GM, Shahi M, Mahmoudi S, Rupasinghe GS, Le VN, Mantica AM, Qian D, Balk TJ, Rivnay J, Weisenberger M, Paterson AF. High-Hole-Mobility Fiber Organic Electrochemical Transistors for Next-Generation Adaptive Neuromorphic Bio-Hybrid Technologies. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305371. [PMID: 37824715 DOI: 10.1002/adma.202305371] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Revised: 09/29/2023] [Indexed: 10/14/2023]
Abstract
The latest developments in fiber design and materials science are paving the way for fibers to evolve from parts in passive components to functional parts in active fabrics. Designing conformable, organic electrochemical transistor (OECT) structures using poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) fibers has excellent potential for low-cost wearable bioelectronics, bio-hybrid devices, and adaptive neuromorphic technologies. However, to achieve high-performance, stable devices from PEDOT:PSS fibers, approaches are required to form electrodes on fibers with small diameters and poor wettability, that leads to irregular coatings. Additionally, PEDOT:PSS-fiber fabrication needs to move away from small batch processing to roll-to-roll or continuous processing. Here, it is shown that synergistic effects from a superior electrode/organic interface, and exceptional fiber alignment from continuous processing, enable PEDOT:PSS fiber-OECTs with stable contacts, high µC* product (1570.5 F cm-1 V-1 s-1 ), and high hole mobility over 45 cm2 V-1 s-1 . Fiber-electrochemical neuromorphic organic devices (fiber-ENODes) are developed to demonstrate that the high mobility fibers are promising building blocks for future bio-hybrid technologies. The fiber-ENODes demonstrate synaptic weight update in response to dopamine, as well as a form factor closely matching the neuronal axon terminal.
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Affiliation(s)
- Paula Alarcon-Espejo
- Department of Chemical and Materials Engineering, Centre for Applied Energy Research, University of Kentucky, Lexington, KY, 40506, USA
| | - Ruben Sarabia-Riquelme
- Department of Chemical and Materials Engineering, Centre for Applied Energy Research, University of Kentucky, Lexington, KY, 40506, USA
| | | | - Maryam Shahi
- Department of Chemical and Materials Engineering, Centre for Applied Energy Research, University of Kentucky, Lexington, KY, 40506, USA
| | - Siamak Mahmoudi
- Department of Chemical and Materials Engineering, Centre for Applied Energy Research, University of Kentucky, Lexington, KY, 40506, USA
| | - Gehan S Rupasinghe
- Department of Chemical and Materials Engineering, Centre for Applied Energy Research, University of Kentucky, Lexington, KY, 40506, USA
| | - Vianna N Le
- Department of Chemical and Materials Engineering, Centre for Applied Energy Research, University of Kentucky, Lexington, KY, 40506, USA
| | - Antonio M Mantica
- Department of Chemical and Materials Engineering, University of Kentucky, Lexington, KY, 40506, USA
| | - Dali Qian
- Department of Chemical and Materials Engineering, Centre for Applied Energy Research, University of Kentucky, Lexington, KY, 40506, USA
| | - T John Balk
- Department of Chemical and Materials Engineering, University of Kentucky, Lexington, KY, 40506, USA
| | - Jonathan Rivnay
- Department of Biomedical Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Matthew Weisenberger
- Department of Chemical and Materials Engineering, Centre for Applied Energy Research, University of Kentucky, Lexington, KY, 40506, USA
| | - Alexandra F Paterson
- Department of Chemical and Materials Engineering, Centre for Applied Energy Research, University of Kentucky, Lexington, KY, 40506, USA
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4
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Can A, Deneme I, Demirel G, Usta H. Solution-Processable Indenofluorenes on Polymer Brush Interlayer: Remarkable N-Channel Field-Effect Transistor Characteristics under Ambient Conditions. ACS APPLIED MATERIALS & INTERFACES 2023; 15:41666-41679. [PMID: 37582254 PMCID: PMC10485804 DOI: 10.1021/acsami.3c07365] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2023] [Accepted: 08/04/2023] [Indexed: 08/17/2023]
Abstract
The development of solution-processable n-type molecular semiconductors that exhibit high electron mobility (μe ≥ 0.5 cm2/(V·s)) under ambient conditions, along with high current modulation (Ion/Ioff ≥ 106-107) and near-zero turn on voltage (Von) characteristics, has lagged behind that of other semiconductors in organic field-effect transistors (OFETs). Here, we report the design, synthesis, physicochemical and optoelectronic characterizations, and OFET performances of a library of solution-processable, low-LUMO (-4.20 eV) 2,2'-(2,8-bis(3-alkylthiophen-2-yl)indeno[1,2-b]fluorene-6,12-diylidene)dimalononitrile small molecules, β,β'-Cn-TIFDMTs, having varied alkyl chain lengths (n = 8, 12, 16). An intriguing correlation is identified between the solid-isotropic liquid transition enthalpies and the solubilities, indicating that cohesive energetics, which are tuned by alkyl chains, play a pivotal role in determining solubility. The semiconductors were spin-coated under ambient conditions on densely packed (grafting densities of 0.19-0.45 chains/nm2) ultrathin (∼3.6-6.6 nm) polystyrene-brush surfaces. It is demonstrated that, on this polymer interlayer, thermally induced dispersive interactions occurring over a large number of methylene units between flexible alkyl chains (i.e., zipper effect) are critical to achieve a favorable thin-film crystallization with a proper microstructure and morphology for efficient charge transport. While C8 and C16 chains show a minimal zipper effect upon thermal annealing, C12 chains undergo an extended interdigitation involving ∼6 methylene units. This results in the formation of large crystallites having lamellar stacking ((100) coherence length ∼30 nm) in the out-of-plane direction and highly favorable in-plane π-interactions in a slipped-stacked arrangement. Uninterrupted microstructural integrity (i.e., no face-on (010)-oriented crystallites) was found to be critical to achieving high mobilities. The excellent crystallinity of the C12-substituted semiconductor thin film was also evident in the observed crystal lattice vibrations (phonons) at 58 cm-1 in low-frequency Raman scattering. Two-dimensional micrometer-sized (∼1-3 μm), sharp-edged plate-like grains lying parallel with the substrate plane were observed. OFETs fabricated by the current small molecules showed excellent n-channel behavior in ambient with μe values reaching ∼0.9 cm2/(V·s), Ion/Ioff ∼ 107-108, and Von ≈ 0 V. Our study not only demonstrates one of the highest performing n-channel OFET devices reported under ambient conditions via solution processing but also elucidates significant relationships among chemical structures, molecular properties, self-assembly from solution into a thin film, and semiconducting thin-film properties. The design rationales presented herein may open up new avenues for the development of high-electron-mobility novel electron-deficient indenofluorene and short-axis substituted donor-acceptor π-architectures via alkyl chain engineering and interface engineering.
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Affiliation(s)
- Ayse Can
- Department
of Nanotechnology Engineering, Abdullah
Gül University, 38080 Kayseri, Turkey
| | - Ibrahim Deneme
- Department
of Nanotechnology Engineering, Abdullah
Gül University, 38080 Kayseri, Turkey
| | - Gokhan Demirel
- Bio-inspired
Materials Research Laboratory (BIMREL), Department of Chemistry, Gazi University, 06500 Ankara, Turkey
| | - Hakan Usta
- Department
of Nanotechnology Engineering, Abdullah
Gül University, 38080 Kayseri, Turkey
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5
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Schwarz M, Vethaak TD, Derycke V, Francheteau A, Iniguez B, Kataria S, Kloes A, Lefloch F, Lemme M, Snyder JP, Weber WM, Calvet LE. The Schottky barrier transistor in emerging electronic devices. NANOTECHNOLOGY 2023; 34:352002. [PMID: 37100049 DOI: 10.1088/1361-6528/acd05f] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Accepted: 04/25/2023] [Indexed: 06/16/2023]
Abstract
This paper explores how the Schottky barrier (SB) transistor is used in a variety of applications and material systems. A discussion of SB formation, current transport processes, and an overview of modeling are first considered. Three discussions follow, which detail the role of SB transistors in high performance, ubiquitous and cryogenic electronics. For high performance computing, the SB typically needs to be minimized to achieve optimal performance and we explore the methods adopted in carbon nanotube technology and two-dimensional electronics. On the contrary for ubiquitous electronics, the SB can be used advantageously in source-gated transistors and reconfigurable field-effect transistors (FETs) for sensors, neuromorphic hardware and security applications. Similarly, judicious use of an SB can be an asset for applications involving Josephson junction FETs.
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Affiliation(s)
| | - Tom D Vethaak
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg, Sweden
| | - Vincent Derycke
- Université Paris-Saclay, CEA, CNRS, NIMBE, LICSEN, Gif-sur-Yvette, F-91191, France
| | | | | | | | | | - Francois Lefloch
- University Grenoble Alps, GINP, CEA-IRIG-PHELIQS, Grenoble, France
| | | | | | - Walter M Weber
- Technische Universität Wien, Institute of Solid State Electronics, Vienna, Austria
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6
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Ghamari P, Niazi MR, Perepichka DF. Improving Environmental and Operational Stability of Polymer Field-Effect Transistors by Doping with Tetranitrofluorenone. ACS APPLIED MATERIALS & INTERFACES 2023; 15:19290-19299. [PMID: 36944187 DOI: 10.1021/acsami.3c01034] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Operational instability of organic field-effect transistors (OFETs) is one of the key limitations for applications of printed electronics. Environmental species, especially oxygen and water, unintentionally introduced in the OFET channel, can act as either dopants or traps for charge carriers, affecting the electrical characteristics and stability of devices. Here, we report that intentional doping of the benchmark p-type semiconducting polymer (DPP-DTT) with 2,4,5,7-tetranitrofluorenone (TeNF) markedly improves the operational and environmental stability of OFETs. Electrical interrogation of DPP-DTT OFETs in various environments and at variable temperatures shows suppression of electron-induced traps and increase of hole mobility in oxygen-rich environment, while the water molecules act as traps for positive charge carrier, reducing the hole mobility and significantly shifting the threshold voltage. Doping of DPP-DTT with TeNF suppresses both effects, resulting in environmentally independent performance and superior long-term stability of unencapsulated devices for up to 4 months in ambient air. Furthermore, the doped OFETs exhibit dramatically reduced hysteresis and bias-stressed current drop. Such improvement of the environmental and operational stabilities is ascribed to the mitigation of traps induced by the injected minority carrier (electrons) and the reduction of the majority carrier (hole) traps in doped polymer films due to enhanced microstructural order.
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Affiliation(s)
- Pegah Ghamari
- Department of Chemistry, McGill University, 801 Sherbrooke Street West, Montreal, Quebec H3A 0B8, Canada
- Department of Electrical Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada
| | - Muhammad Rizwan Niazi
- Department of Chemistry, McGill University, 801 Sherbrooke Street West, Montreal, Quebec H3A 0B8, Canada
| | - Dmytro F Perepichka
- Department of Chemistry, McGill University, 801 Sherbrooke Street West, Montreal, Quebec H3A 0B8, Canada
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7
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Abstract
With the advent of a new era of smart-technology, the demand for more economic optoelectronic materials that do not compromise with efficiency is gradually on the rise. Organic semiconductors provide greener alternatives to the conventional inorganic ones, but encounter the challenge of balancing charge carrier mobility with processability in devices. Discotic liquid crystals (DLCs), a class of self-assembling soft organic materials, possess the perfect degree of order and dynamics to address this challenge. Providing unidimensional charge carrier pathways through their nanoscale columnar architecture, DLCs can behave as efficient charge transport systems across a wide range of optoelectronic devices. Moreover, DLCs are solution-processable, thus reducing the fabrication cost. In this article, we have discussed the approaches towards developing DLCs as semiconductors, focusing on their molecular design concepts, supramolecular structures and electronic properties in the context of their charge carrier mobilities.
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Affiliation(s)
- Ritobrata De
- Department of Chemical Sciences, Indian Institute of Science Education and Research (IISER) Mohali, Sector-81, SAS Nagar, Knowledge City, Manauli-140306, India.
| | - Santanu Kumar Pal
- Department of Chemical Sciences, Indian Institute of Science Education and Research (IISER) Mohali, Sector-81, SAS Nagar, Knowledge City, Manauli-140306, India.
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8
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Ciobotaru IC, Enculescu M, Polosan S, Enculescu I, Ciobotaru CC. Organic Light-Emitting Diodes with Electrospun Electrodes for Double-Side Emissions. MICROMACHINES 2023; 14:543. [PMID: 36984949 PMCID: PMC10056642 DOI: 10.3390/mi14030543] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/25/2023] [Revised: 02/21/2023] [Accepted: 02/23/2023] [Indexed: 06/18/2023]
Abstract
Transparent conductive electrodes (TCE) obtained by the electrospinning method and gold covered were used as cathodes in the organic light-emitting diodes (OLEDs) to create double side-emission. The electro-active nanofibers of poly(methyl methacrylate) (PMMA) with diameters in the range of several hundreds of nanometers, were prepared through the electrospinning method. The nanofibers were coated with gold by sputtering deposition, maintaining optimal transparency and conductivity to increase the electroluminescence on both electrodes. Optical, structural, and electrical measurements of the as-prepared transparent electrodes have shown good transparency and higher electrical conductivity. In this study, two types of OLEDs consisting of indium tin oxide (ITO)/ poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT-PSS)/ Ir(III) complex (8-hydroxyquinolinat bis(2-phenylpyridyl) iridium-IrQ(ppy)2 20 wt% embedded in N, N'-Dicarbazolyl-4,4'-biphenyl (CBP) sandwich structure and either gold-covered PMMA electrospun nanoweb (OLED with electrospun cathode) were fabricated together with a similar structure containing thin film gold cathodes (OLED with thin film cathode). The luminance-current-voltage characteristics, the capacitance-voltage, and the electroluminescence properties of these OLEDs were investigated.
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9
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DiTullio BT, Savagian LR, Bardagot O, De Keersmaecker M, Österholm AM, Banerji N, Reynolds JR. Effects of Side-Chain Length and Functionality on Polar Poly(dioxythiophene)s for Saline-Based Organic Electrochemical Transistors. J Am Chem Soc 2023; 145:122-134. [PMID: 36563183 DOI: 10.1021/jacs.2c08850] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Abstract
Understanding the impact of side chains on the aqueous redox properties of conjugated polymers is crucial to unlocking their potential in bioelectrochemical devices, such as organic electrochemical transistors (OECTs). Here, we report a series of polar propylenedioxythiophene-based copolymers functionalized with glyme side chains of varying lengths as well as an analogue with short hydroxyl side chains. We show that long polar side chains are not required for achieving high volumetric capacitance (C*), as short hydroxy substituents can afford facile doping and high C* in saline-based electrolytes. Furthermore, we demonstrate that varying the length of the polar glyme chains leads to subtle changes in material properties. Increasing the length of glyme side chain is generally associated with an enhancement in OECT performance, doping kinetics, and stability, with the polymer bearing the longest side chains exhibiting the highest performance ([μC*]OECT = 200 ± 8 F cm-1 V-1 s-1). The origin of this performance enhancement is investigated in different device configurations using in situ techniques (e.g., time-resolved spectroelectrochemistry and chronoamperometry). These studies suggest that the performance improvement is not due to significant changes in C* but rather due to variations in the inferred mobility. Through a thorough comparison of two different architectures, we demonstrate that device geometry can obfuscate the benchmarking of OECT active channel materials, likely due to contact resistance effects. By complementing all electrochemical and spectroscopic experiments with in situ measurements performed within a planar OECT device configuration, this work seeks to unambiguously assign material design principles to fine-tune the properties of poly(dioxythiophene)s relevant for application in OECTs.
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Affiliation(s)
- Brandon T DiTullio
- School of Chemistry and Biochemistry, Center for Organic Photonics and Electronics, Georgia Tech Polymer Network, Georgia Institute of Technology, Atlanta, Georgia30332, United States
| | - Lisa R Savagian
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia30332, United States
| | - Olivier Bardagot
- Department of Chemistry, Biochemistry and Pharmaceutical Sciences (DCBP), University of Bern, Bern3012, Switzerland
| | - Michel De Keersmaecker
- School of Chemistry and Biochemistry, Center for Organic Photonics and Electronics, Georgia Tech Polymer Network, Georgia Institute of Technology, Atlanta, Georgia30332, United States
| | - Anna M Österholm
- School of Chemistry and Biochemistry, Center for Organic Photonics and Electronics, Georgia Tech Polymer Network, Georgia Institute of Technology, Atlanta, Georgia30332, United States
| | - Natalie Banerji
- Department of Chemistry, Biochemistry and Pharmaceutical Sciences (DCBP), University of Bern, Bern3012, Switzerland
| | - John R Reynolds
- School of Chemistry and Biochemistry, Center for Organic Photonics and Electronics, Georgia Tech Polymer Network, Georgia Institute of Technology, Atlanta, Georgia30332, United States.,School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia30332, United States
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10
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Sommerville PW, Balzer AH, Lecroy G, Guio L, Wang Y, Onorato JW, Kukhta NA, Gu X, Salleo A, Stingelin N, Luscombe CK. Influence of Side Chain Interdigitation on Strain and Charge Mobility of Planar Indacenodithiophene Copolymers. ACS POLYMERS AU 2022; 3:59-69. [PMID: 36785836 PMCID: PMC9912480 DOI: 10.1021/acspolymersau.2c00034] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/18/2022] [Revised: 09/21/2022] [Accepted: 09/21/2022] [Indexed: 11/29/2022]
Abstract
Indacenodithiophene (IDT) copolymers are a class of conjugated polymers that have limited long-range order and high hole mobilities, which makes them promising candidates for use in deformable electronic devices. Key to their high hole mobilities is the coplanar monomer repeat units within the backbone. Poly(indacenodithiophene-benzothiadiazole) (PIDTC16-BT) and poly(indacenodithiophene-thiapyrollodione) (PIDTC16-TPDC1) are two IDT copolymers with planar backbones, but they are brittle at low molecular weight and have unsuitably high elastic moduli. Substitution of the hexadecane (C16) side chains of the IDT monomer with isocane (C20) side chains was performed to generate a new BT-containing IDT copolymer: PIDTC20-BT. Substitution of the methyl (C1) side chain on the TPD monomer for an octyl (C8) and 6-ethylundecane (C13B) afford two new TPD-containing IDT copolymers named PIDTC16-TPDC8 and PIDTC16-TPDC13B, respectively. Both PIDTC16-TPDC8 and PIDTC16-TPDC13B are relatively well deformable, have a low yield strain, and display significantly reduced elastic moduli. These mechanical properties manifest themselves because the lengthened side chains extending from the TPD-monomer inhibit precise intermolecular ordering. In PIDTC16-BT, PIDTC20-BT and PIDTC16-TPDC1 side chain ordering can occur because the side chains are only present on the IDT subunit, but this results in brittle thin films. In contrast, PIDTC16-TPDC8 and PIDTC16-TPDC13B have disordered side chains, which seems to lead to low hole mobilities. These results suggest that disrupting the interdigitation in IDT copolymers through comonomer side chain extension leads to more ductile thin films with lower elastic moduli, but decreased hole mobility because of altered local order in the respective thin films. Our work, thus, highlights the trade-off between molecular packing structure for deformable electronic materials and provides guidance for designing new conjugated polymers for stretchable electronics.
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Affiliation(s)
- Parker
J. W. Sommerville
- 1Department
of Chemistry and 2Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Alex H. Balzer
- 4School of Chemical and Biomolecular Engineering and 5School of Materials
Science and Engineering, Georgia Institute
of Technology, North Avenue NW, Atlanta, Georgia 30332, United
States
| | - Garrett Lecroy
- Department
of Materials Science and Engineering, Stanford
University, Stanford, California 94305 United States
| | - Lorenzo Guio
- 1Department
of Chemistry and 2Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Yunfei Wang
- School of
Polymer Science and Engineering, The University
of Southern Mississippi, Hattiesburg, Mississippi 39406, United States
| | - Jonathan W. Onorato
- 1Department
of Chemistry and 2Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Nadzeya A. Kukhta
- 1Department
of Chemistry and 2Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Xiaodan Gu
- School of
Polymer Science and Engineering, The University
of Southern Mississippi, Hattiesburg, Mississippi 39406, United States
| | - Alberto Salleo
- Department
of Materials Science and Engineering, Stanford
University, Stanford, California 94305 United States
| | - Natalie Stingelin
- 4School of Chemical and Biomolecular Engineering and 5School of Materials
Science and Engineering, Georgia Institute
of Technology, North Avenue NW, Atlanta, Georgia 30332, United
States
| | - Christine K. Luscombe
- 1Department
of Chemistry and 2Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States,pi-Conjugated
Polymers Unit, Okinawa Institute of Science
and Technology Graduate University, Onna-son, Okinawa 904-0495, Japan,
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11
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A polymer electrolyte design enables ultralow-work-function electrode for high-performance optoelectronics. Nat Commun 2022; 13:4987. [PMID: 36008446 PMCID: PMC9411633 DOI: 10.1038/s41467-022-32651-z] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/10/2022] [Accepted: 08/10/2022] [Indexed: 11/08/2022] Open
Abstract
Ambient solution-processed conductive materials with a sufficient low work function are essential to facilitate electron injection in electronic and optoelectronic devices but are challenging. Here, we design an electrically conducting and ambient-stable polymer electrolyte with an ultralow work function down to 2.2 eV, which arises from heavy n-doping of dissolved salts to polymer matrix. Such materials can be solution processed into uniform and smooth films on various conductors including graphene, conductive metal oxides, conducting polymers and metals to substantially improve their electron injection, enabling high-performance blue light-emitting diodes and transparent light-emitting diodes. This work provides a universal strategy to design a wide range of stable charge injection materials with tunable work function. As an example, we also synthesize a high-work-function polymer electrolyte material for high-performance solar cells. Ambient-stable solution-processed conductive materials with a low work function are essential to facilitate electron injection. Here, the authors design and synthesise polymer electrolyte with work function down to 2.2 eV for applications in high-performance light-emitting diodes and solar cells.
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12
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Dynamic self-stabilization in the electronic and nanomechanical properties of an organic polymer semiconductor. Nat Commun 2022; 13:3076. [PMID: 35654891 PMCID: PMC9163058 DOI: 10.1038/s41467-022-30801-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/20/2022] [Accepted: 05/19/2022] [Indexed: 11/20/2022] Open
Abstract
The field of organic electronics has profited from the discovery of new conjugated semiconducting polymers that have molecular backbones which exhibit resilience to conformational fluctuations, accompanied by charge carrier mobilities that routinely cross the 1 cm2/Vs benchmark. One such polymer is indacenodithiophene-co-benzothiadiazole. Previously understood to be lacking in microstructural order, we show here direct evidence of nanosized domains of high order in its thin films. We also demonstrate that its device-based high-performance electrical and thermoelectric properties are not intrinsic but undergo rapid stabilization following a burst of ambient air exposure. The polymer’s nanomechanical properties equilibrate on longer timescales owing to an orthogonal mechanism; the gradual sweating-out of residual low molecular weight solvent molecules from its surface. We snapshot the quasistatic temporal evolution of the electrical, thermoelectric and nanomechanical properties of this prototypical organic semiconductor and investigate the subtleties which play on competing timescales. Our study documents the untold and often overlooked story of a polymer device’s dynamic evolution toward stability. Organic polymer nanomechanics has been explored through precise nanometre-scale stiffness measurements in a high-mobility semiconducting polymer. Higher eigen-mode atomic force microscopy is used to measure nanomechnical variations in the film texture, as well as the nanoscale order in the material.
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13
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Loganathan K, Scaccabarozzi AD, Faber H, Ferrari F, Bizak Z, Yengel E, Naphade DR, Gedda M, He Q, Solomeshch O, Adilbekova B, Yarali E, Tsetseris L, Salama KN, Heeney M, Tessler N, Anthopoulos TD. 14 GHz Schottky Diodes Using a p-Doped Organic Polymer. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108524. [PMID: 34990058 DOI: 10.1002/adma.202108524] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/23/2021] [Revised: 12/16/2021] [Indexed: 06/14/2023]
Abstract
The low carrier mobility of organic semiconductors and the high parasitic resistance and capacitance often encountered in conventional organic Schottky diodes hinder their deployment in emerging radio frequency (RF) electronics. Here, these limitations are overcome by combining self-aligned asymmetric nanogap electrodes (≈25 nm) produced by adhesion lithography, with a high mobility organic semiconductor, and RF Schottky diodes able to operate in the 5G frequency spectrum are demonstrated. C16 IDT-BT is used, as the high hole mobility polymer, and the impact of p-doping on the diode performance is studied. Pristine C16 IDT-BT-based diodes exhibit maximum intrinsic and extrinsic cutoff frequencies (fC ) of >100 and 6 GHz, respectively. This extraordinary performance is attributed to the planar nature of the nanogap channel and the diode's small junction capacitance (<2 pF). Doping of C16 IDT-BT with the molecular p-dopant C60 F48 improves the diode's performance further by reducing the series resistance resulting to intrinsic and extrinsic fC of >100 and ≈14 GHz respectively, while the DC output voltage of an RF rectifier circuit increases by a tenfold. Our work highlights the importance of the planar nanogap architecture and paves the way for the use of organic Schottky diodes in large-area RF electronics of the future.
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Affiliation(s)
- Kalaivanan Loganathan
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal, 23955-6900, Saudi Arabia
| | - Alberto D Scaccabarozzi
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal, 23955-6900, Saudi Arabia
| | - Hendrik Faber
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal, 23955-6900, Saudi Arabia
| | - Federico Ferrari
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal, 23955-6900, Saudi Arabia
| | - Zhanibek Bizak
- King Abdullah University of Science and Technology (KAUST), Computer, Electrical and Mathematical Sciences and Engineering (CEMSE), Advanced Membranes and Porous Materials Center (AMPM), Thuwal, 23955-6900, Saudi Arabia
| | - Emre Yengel
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal, 23955-6900, Saudi Arabia
| | - Dipti R Naphade
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal, 23955-6900, Saudi Arabia
| | - Murali Gedda
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal, 23955-6900, Saudi Arabia
| | - Qiao He
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London, W12 0BZ, UK
| | - Olga Solomeshch
- The Zisapel Nano-Electronic Center, Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa, 3200, Israel
| | - Begimai Adilbekova
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal, 23955-6900, Saudi Arabia
| | - Emre Yarali
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal, 23955-6900, Saudi Arabia
| | - Leonidas Tsetseris
- Department of Physics, National Technical University of Athens, Athens, GR-15780, Greece
| | - Khaled N Salama
- King Abdullah University of Science and Technology (KAUST), Computer, Electrical and Mathematical Sciences and Engineering (CEMSE), Advanced Membranes and Porous Materials Center (AMPM), Thuwal, 23955-6900, Saudi Arabia
| | - Martin Heeney
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London, W12 0BZ, UK
| | - Nir Tessler
- The Zisapel Nano-Electronic Center, Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa, 3200, Israel
| | - Thomas D Anthopoulos
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal, 23955-6900, Saudi Arabia
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14
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Highly Efficient Contact Doping for High-Performance Organic UV-Sensitive Phototransistors. CRYSTALS 2022. [DOI: 10.3390/cryst12050651] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
Organic ultraviolet (UV) phototransistors are promising for diverse applications. However, wide-bandgap organic semiconductors (OSCs) with intense UV absorption tend to exhibit large contact resistance (Rc) because of an energy-level mismatch with metal electrodes. Herein, we discovered that the molecular dopant of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) was more efficient than the transition metal oxide dopant of MoO3 in doping a wide-bandgap OSC, although the former showed smaller electron affinity (EA). By efficient contact doping, a low Rc of 889 Ω·cm and a high mobility of 13.89 cm2V−1s−1 were achieved. As a result, UV-sensitive phototransistors showed high photosensitivity and responsivity.
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15
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Davydok A, Luponosov YN, Ponomarenko SA, Grigorian S. In Situ Coupling Applied Voltage and Synchrotron Radiation: Operando Characterization of Transistors. NANOSCALE RESEARCH LETTERS 2022; 17:22. [PMID: 35107638 PMCID: PMC8811105 DOI: 10.1186/s11671-022-03662-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/04/2020] [Accepted: 01/16/2022] [Indexed: 06/14/2023]
Abstract
A compact voltage application setup has been developed for in situ electrical testing of organic field effect transistors in combination with X-ray scattering studies at a synchrotron beamlines. Challenges faced during real condition in-operando test of newly developed OFETs originated an idea of creation of a new setup which excludes number of factors that make experiments complicated. The application of the setup is demonstrated on a prototype of an organic transistors based on α,ω-dihexyl-α-quaterthiophene molecules. The new setup allows to monitor material structural changes by X-ray scattering under applied voltage conditions and their direct correlations. The versatile setup eliminates possible shadowing effects and short circuits due to misalignment of the contacts. The electrical stability of the prototypes was characterized by the application of different voltage values. Corresponding structural changes were monitored by grazing X-ray scattering technique before, during and after the voltage was applied. The selected oligothiophene material with proved transistor properties shows high stability and directional anisotropy under applied voltage conditions. Thanks to a compact and flexible design of the setup, different type of small dimension devices could be studied under external voltage conditions at various synchrotron beamlines.
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Affiliation(s)
- Anton Davydok
- Institute for Materials Physics, Helmholtz-Zentrum Hereon, Notkestr 85, 22607 Hamburg, Germany
| | - Yuriy N. Luponosov
- Enikolopov Institute of Synthetic Polymeric Materials of the Russian Academy of Sciences, Profsoyuznaya 70, Moscow, Russia
| | - Sergey A. Ponomarenko
- Enikolopov Institute of Synthetic Polymeric Materials of the Russian Academy of Sciences, Profsoyuznaya 70, Moscow, Russia
| | - Souren Grigorian
- Department of Physics, University of Siegen, Walter-Flex-Straße 3, 57072 Siegen, Germany
- Department of Chemistry, Sapienza University of Rome, p.le Aldo Moro 5, 00185 Rome, Italy
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16
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Borchert JW, Weitz RT, Ludwigs S, Klauk H. A Critical Outlook for the Pursuit of Lower Contact Resistance in Organic Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2104075. [PMID: 34623710 DOI: 10.1002/adma.202104075] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2021] [Revised: 08/20/2021] [Indexed: 06/13/2023]
Abstract
To take full advantage of recent and anticipated improvements in the performance of organic semiconductors employed in organic transistors, the high contact resistance arising at the interfaces between the organic semiconductor and the source and drain contacts must be reduced significantly. To date, only a small portion of the accumulated research on organic thin-film transistors (TFTs) has reported channel-width-normalized contact resistances below 100 Ωcm, well above what is regularly demonstrated in transistors based on inorganic semiconductors. A closer look at these cases and the relevant literature strongly suggests that the most significant factor leading to the lowest contact resistances in organic TFTs so far has been the control of the thin-film morphology of the organic semiconductor. By contrast, approaches aimed at increasing the charge-carrier density and/or reducing the intrinsic Schottky barrier height have so far played a relatively minor role in achieving the lowest contact resistances. Herein, the possible explanations for these observations are explored, including the prevalence of Fermi-level pinning and the difficulties in forming optimized interfaces with organic semiconductors. An overview of the research on these topics is provided, and potential device-engineering solutions are discussed based on recent advancements in the theoretical and experimental work on both organic and inorganic semiconductors.
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Affiliation(s)
- James W Borchert
- 1st Institute of Physics, Georg August University of Göttingen, Friedrich-Hund-Platz 1, 37077, Göttingen, Germany
| | - R Thomas Weitz
- 1st Institute of Physics, Georg August University of Göttingen, Friedrich-Hund-Platz 1, 37077, Göttingen, Germany
| | - Sabine Ludwigs
- IPOC - Functional Polymers, Institute of Polymer Chemistry, University of Stuttgart, Pfaffenwaldring 55, 70569, Stuttgart, Germany
| | - Hagen Klauk
- Max Planck Institute for Solid State Research, Heisenbergstraße 1, 70569, Stuttgart, Germany
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17
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Scaccabarozzi AD, Basu A, Aniés F, Liu J, Zapata-Arteaga O, Warren R, Firdaus Y, Nugraha MI, Lin Y, Campoy-Quiles M, Koch N, Müller C, Tsetseris L, Heeney M, Anthopoulos TD. Doping Approaches for Organic Semiconductors. Chem Rev 2021; 122:4420-4492. [PMID: 34793134 DOI: 10.1021/acs.chemrev.1c00581] [Citation(s) in RCA: 70] [Impact Index Per Article: 23.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
Electronic doping in organic materials has remained an elusive concept for several decades. It drew considerable attention in the early days in the quest for organic materials with high electrical conductivity, paving the way for the pioneering work on pristine organic semiconductors (OSCs) and their eventual use in a plethora of applications. Despite this early trend, however, recent strides in the field of organic electronics have been made hand in hand with the development and use of dopants to the point that are now ubiquitous. Here, we give an overview of all important advances in the area of doping of organic semiconductors and their applications. We first review the relevant literature with particular focus on the physical processes involved, discussing established mechanisms but also newly proposed theories. We then continue with a comprehensive summary of the most widely studied dopants to date, placing particular emphasis on the chemical strategies toward the synthesis of molecules with improved functionality. The processing routes toward doped organic films and the important doping-processing-nanostructure relationships, are also discussed. We conclude the review by highlighting how doping can enhance the operating characteristics of various organic devices.
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Affiliation(s)
- Alberto D Scaccabarozzi
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia
| | - Aniruddha Basu
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia
| | - Filip Aniés
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, U.K
| | - Jian Liu
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, Göteborg 412 96, Sweden
| | - Osnat Zapata-Arteaga
- Materials Science Institute of Barcelona, ICMAB-CSIC, Campus UAB, 08193 Bellaterra, Spain
| | - Ross Warren
- Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany
| | - Yuliar Firdaus
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia.,Research Center for Electronics and Telecommunication, Indonesian Institute of Science, Jalan Sangkuriang Komplek LIPI Building 20 level 4, Bandung 40135, Indonesia
| | - Mohamad Insan Nugraha
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia
| | - Yuanbao Lin
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia
| | - Mariano Campoy-Quiles
- Materials Science Institute of Barcelona, ICMAB-CSIC, Campus UAB, 08193 Bellaterra, Spain
| | - Norbert Koch
- Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Kekulé-Strasse 5, 12489 Berlin, Germany.,Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany
| | - Christian Müller
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, Göteborg 412 96, Sweden
| | - Leonidas Tsetseris
- Department of Physics, National Technical University of Athens, Athens GR-15780, Greece
| | - Martin Heeney
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, U.K
| | - Thomas D Anthopoulos
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia
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18
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Wang S, Zhao X, Zhang C, Yang Y, Liang J, Ni Y, Zhang M, Li J, Ye X, Zhang J, Tong Y, Tang Q, Liu Y. Suppressing Interface Strain for Eliminating Double-Slope Behaviors: Towards Ideal Conformable Polymer Field-Effect Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101633. [PMID: 34480384 DOI: 10.1002/adma.202101633] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2021] [Revised: 07/13/2021] [Indexed: 06/13/2023]
Abstract
High-mobility polymer field-effect transistors (PFETs) are being actively explored for applications in soft electronic skin and low-cost flexible displays because of their superior solution processability, mechanical flexibility, and stretchability. However, most of high-mobility PFETs often deviate from the idealized behavior with variable mobility, large threshold voltage, and high off-state current, which masks their intrinsic properties and significantly impedes their practical applications. Here, it is first revealed that interface strain between polymer thin film and rigid substrate plays a crucial role in determining the ideality of PFETs, and demonstrate that various ideal conformable PFETs can be successfully fabricated by releasing strain. It is found that strain in film can be released by one-step peeling strategy, which can reduce π-π stacking distance and suppress generation of oxygen doped carriers, thereby obtaining linearly injected charge carriers and decreased carrier concentration in channel, eventually realizing ideal PFETs. More impressively, the fabricated ideal conformable PFET array displays outstanding conformability to curved objects, and meanwhile showing excellent organic light-emitting display driving capability. The work clarifies the effect of the interface strain on the device ideality, and strain can be effectively released by a facile peeling strategy, thus offering useful guidance for the construction of ideal conformable PFETs.
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Affiliation(s)
- Shuya Wang
- Center for Advanced Optoelectronic Functional Materials Research and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Xiaoli Zhao
- Center for Advanced Optoelectronic Functional Materials Research and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Cong Zhang
- Center for Advanced Optoelectronic Functional Materials Research and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Yahan Yang
- Center for Advanced Optoelectronic Functional Materials Research and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Jing Liang
- Center for Advanced Optoelectronic Functional Materials Research and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Yanping Ni
- Center for Advanced Optoelectronic Functional Materials Research and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Mingxin Zhang
- Center for Advanced Optoelectronic Functional Materials Research and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Juntong Li
- Center for Advanced Optoelectronic Functional Materials Research and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Xiaolin Ye
- Center for Advanced Optoelectronic Functional Materials Research and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Jidong Zhang
- Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, China
| | - Yanhong Tong
- Center for Advanced Optoelectronic Functional Materials Research and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Qingxin Tang
- Center for Advanced Optoelectronic Functional Materials Research and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
| | - Yichun Liu
- Center for Advanced Optoelectronic Functional Materials Research and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China
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19
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Cendra C, Balhorn L, Zhang W, O’Hara K, Bruening K, Tassone CJ, Steinrück HG, Liang M, Toney MF, McCulloch I, Chabinyc ML, Salleo A, Takacs CJ. Unraveling the Unconventional Order of a High-Mobility Indacenodithiophene-Benzothiadiazole Copolymer. ACS Macro Lett 2021; 10:1306-1314. [PMID: 35549036 DOI: 10.1021/acsmacrolett.1c00547] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
A new class of donor-acceptor (D-A) copolymers found to produce high charge carrier mobilities competitive with amorphous silicon (>1 cm2 V-1 s-1) exhibit the puzzling microstructure of substantial local order, however lacking long-range order and crystallinity previously deemed necessary for achieving high mobility. Here, we demonstrate the application of low-dose transmission electron microscopy to image and quantify the nanoscale and mesoscale organization of an archetypal D-A copolymer across areas comparable to electronic devices (≈9 μm2). The local structure is spatially resolved by mapping the backbone (001) spacing reflection, revealing nanocrystallites of aligned polymer chains throughout nearly the entire film. Analysis of the nanoscale structure of its ordered domains suggests significant short- and medium-range order and preferential grain boundary orientations. Moreover, we provide insights into the rich, interconnected mesoscale organization of this new family of D-A copolymers by analysis of the local orientational spatial autocorrelations.
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Affiliation(s)
- Camila Cendra
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
| | - Luke Balhorn
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
| | - Weimin Zhang
- Physical Science and Engineering Division KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Kathryn O’Hara
- Materials Department, University of California—Santa Barbara, Santa Barbara, California 93106, United States
| | - Karsten Bruening
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Christopher J. Tassone
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Hans-Georg Steinrück
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department Chemie, Universität Paderborn, 33098 Paderborn, Germany
| | - Mengning Liang
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Michael F. Toney
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Chemical and Biological Engineering, University of Colorado—Boulder, Boulder, Colorado 80303, United States
| | - Iain McCulloch
- Physical Science and Engineering Division KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
- Department of Chemistry, University of Oxford, Oxford OX1 3TA, United Kingdom
| | - Michael L. Chabinyc
- Materials Department, University of California—Santa Barbara, Santa Barbara, California 93106, United States
| | - Alberto Salleo
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
| | - Christopher J. Takacs
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
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20
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Kousseff CJ, Halaksa R, Parr ZS, Nielsen CB. Mixed Ionic and Electronic Conduction in Small-Molecule Semiconductors. Chem Rev 2021; 122:4397-4419. [PMID: 34491034 DOI: 10.1021/acs.chemrev.1c00314] [Citation(s) in RCA: 33] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/04/2023]
Abstract
Small-molecule organic semiconductors have displayed remarkable electronic properties with a multitude of π-conjugated structures developed and fine-tuned over recent years to afford highly efficient hole- and electron-transporting materials. Already making a significant impact on organic electronic applications including organic field-effect transistors and solar cells, this class of materials is also now naturally being considered for the emerging field of organic bioelectronics. In efforts aimed at identifying and developing (semi)conducting materials for bioelectronic applications, particular attention has been placed on materials displaying mixed ionic and electronic conduction to interface efficiently with the inherently ionic biological world. Such mixed conductors are conveniently evaluated using an organic electrochemical transistor, which further presents itself as an ideal bioelectronic device for transducing biological signals into electrical signals. Here, we review recent literature relevant for the design of small-molecule mixed ionic and electronic conductors. We assess important classes of p- and n-type small-molecule semiconductors, consider structural modifications relevant for mixed conduction and for specific interactions with ionic species, and discuss the outlook of small-molecule semiconductors in the context of organic bioelectronics.
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Affiliation(s)
- Christina J Kousseff
- Department of Chemistry, Queen Mary University of London, Mile End Road, London E1 4NS, United Kingdom
| | - Roman Halaksa
- Department of Chemistry, Queen Mary University of London, Mile End Road, London E1 4NS, United Kingdom
| | - Zachary S Parr
- Department of Chemistry, Queen Mary University of London, Mile End Road, London E1 4NS, United Kingdom
| | - Christian B Nielsen
- Department of Chemistry, Queen Mary University of London, Mile End Road, London E1 4NS, United Kingdom
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21
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Iqbal HF, Ai Q, Thorley KJ, Chen H, McCulloch I, Risko C, Anthony JE, Jurchescu OD. Suppressing bias stress degradation in high performance solution processed organic transistors operating in air. Nat Commun 2021; 12:2352. [PMID: 33883553 PMCID: PMC8060299 DOI: 10.1038/s41467-021-22683-2] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/12/2020] [Accepted: 03/23/2021] [Indexed: 12/03/2022] Open
Abstract
Solution processed organic field effect transistors can become ubiquitous in flexible optoelectronics. While progress in material and device design has been astonishing, low environmental and operational stabilities remain longstanding problems obstructing their immediate deployment in real world applications. Here, we introduce a strategy to identify the most probable and severe degradation pathways in organic transistors and then implement a method to eliminate the main sources of instabilities. Real time monitoring of the energetic distribution and transformation of electronic trap states during device operation, in conjunction with simulations, revealed the nature of traps responsible for performance degradation. With this information, we designed the most efficient encapsulation strategy for each device type, which resulted in fabrication of high performance, environmentally and operationally stable small molecule and polymeric transistors with consistent mobility and unparalleled threshold voltage shifts as low as 0.1 V under the application of high bias stress in air. Electrical instability of organic field-effect transistors (OFETs) during operation remains a challenge that limits the device’s real-world technological viability. Here, the authors report a method for diagnosing and suppressing bias stress in solution-processed OFETs operated in air.
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Affiliation(s)
- Hamna F Iqbal
- Department of Physics and Center for Functional Materials, Wake Forest University, Winston Salem, NC, USA
| | - Qianxiang Ai
- Department of Chemistry and Center for Applied Energy Research (CAER), University of Kentucky, Lexington, KY, USA
| | - Karl J Thorley
- Department of Chemistry and Center for Applied Energy Research (CAER), University of Kentucky, Lexington, KY, USA
| | - Hu Chen
- King Abdullah University of Science and Technology, KAUST Solar Center (KSC), Thuwal, Saudi Arabia
| | - Iain McCulloch
- King Abdullah University of Science and Technology, KAUST Solar Center (KSC), Thuwal, Saudi Arabia.,Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Oxford, UK
| | - Chad Risko
- Department of Chemistry and Center for Applied Energy Research (CAER), University of Kentucky, Lexington, KY, USA
| | - John E Anthony
- Department of Chemistry and Center for Applied Energy Research (CAER), University of Kentucky, Lexington, KY, USA
| | - Oana D Jurchescu
- Department of Physics and Center for Functional Materials, Wake Forest University, Winston Salem, NC, USA.
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22
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Ye X, Zhao X, Wang S, Wei Z, Lv G, Yang Y, Tong Y, Tang Q, Liu Y. Blurred Electrode for Low Contact Resistance in Coplanar Organic Transistors. ACS NANO 2021; 15:1155-1166. [PMID: 33337129 DOI: 10.1021/acsnano.0c08122] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Inefficient charge injection and transport across the electrode/semiconductor contact edge severely limits the device performance of coplanar organic thin-film transistors (OTFTs). To date, various approaches have been implemented to address the adverse contact problems of coplanar OTFTs. However, these approaches mainly focused on reducing the injection resistance and failed to effectively lower the access resistance. Here, we demonstrate a facile strategy by utilizing the blurring effect during the deposition of metal electrodes, to significantly reduce the access resistance. We find that the transition region formed by the blurring behavior can continuously tune the molecular packing and thin-film growth of organic semiconductors across the contact edge, as well as provide continuously distributed gap states for carrier tunnelling. Based on this versatile strategy, the fabricated dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) coplanar OTFT shows a high field-effect mobility of 6.08 cm2 V-1 s-1 and a low contact resistance of 2.32 kΩ cm, comparable to the staggered OTFTs fabricated simultaneously. Our work addresses the crucial impediments for further reducing the contact resistance in coplanar OTFTs, which represents a significant step of contact injection engineering in organic devices.
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Affiliation(s)
- Xiaolin Ye
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Xiaoli Zhao
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Shuya Wang
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Zhan Wei
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Guangshuang Lv
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Yahan Yang
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Yanhong Tong
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Qingxin Tang
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
| | - Yichun Liu
- Center for Advanced Optoelectronic Functional Materials Research, and Key Lab of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China
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23
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Salzillo T, D'Amico F, Montes N, Pfattner R, Mas-Torrent M. Influence of polymer binder on the performance of diF-TES-ADT based organic field effect transistor. CrystEngComm 2021. [DOI: 10.1039/d0ce01467b] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/20/2023]
Abstract
The presented work concerns the study of solution sheared organic thin film transistors based on a 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (diF-TES-ADT) polymer blend.
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Affiliation(s)
- Tommaso Salzillo
- Institut de Ciència de Materials de Barcelona
- ICMAB-CSIC
- 08193 Bellaterra
- Spain
- Department of Materials and Interfaces
| | | | - Nieves Montes
- Institut de Ciència de Materials de Barcelona
- ICMAB-CSIC
- 08193 Bellaterra
- Spain
| | - Raphael Pfattner
- Institut de Ciència de Materials de Barcelona
- ICMAB-CSIC
- 08193 Bellaterra
- Spain
| | - Marta Mas-Torrent
- Institut de Ciència de Materials de Barcelona
- ICMAB-CSIC
- 08193 Bellaterra
- Spain
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24
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Schauble K, Zakhidov D, Yalon E, Deshmukh S, Grady RW, Cooley KA, McClellan CJ, Vaziri S, Passarello D, Mohney SE, Toney MF, Sood AK, Salleo A, Pop E. Uncovering the Effects of Metal Contacts on Monolayer MoS 2. ACS NANO 2020; 14:14798-14808. [PMID: 32905703 DOI: 10.1021/acsnano.0c03515] [Citation(s) in RCA: 42] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Metal contacts are a key limiter to the electronic performance of two-dimensional (2D) semiconductor devices. Here, we present a comprehensive study of contact interfaces between seven metals (Y, Sc, Ag, Al, Ti, Au, Ni, with work functions from 3.1 to 5.2 eV) and monolayer MoS2 grown by chemical vapor deposition. We evaporate thin metal films onto MoS2 and study the interfaces by Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction, transmission electron microscopy, and electrical characterization. We uncover that (1) ultrathin oxidized Al dopes MoS2 n-type (>2 × 1012 cm-2) without degrading its mobility, (2) Ag, Au, and Ni deposition causes varying levels of damage to MoS2 (e.g. broadening Raman E' peak from <3 to >6 cm-1), and (3) Ti, Sc, and Y react with MoS2. Reactive metals must be avoided in contacts to monolayer MoS2, but control studies reveal the reaction is mostly limited to the top layer of multilayer films. Finally, we find that (4) thin metals do not significantly strain MoS2, as confirmed by X-ray diffraction. These are important findings for metal contacts to MoS2 and broadly applicable to many other 2D semiconductors.
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Affiliation(s)
- Kirstin Schauble
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Dante Zakhidov
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
| | - Eilam Yalon
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Sanchit Deshmukh
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Ryan W Grady
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Kayla A Cooley
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Connor J McClellan
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Sam Vaziri
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
| | - Donata Passarello
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Suzanne E Mohney
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Michael F Toney
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - A K Sood
- Department of Physics, India Institute of Science, Bangalore 560012, India
| | - Alberto Salleo
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
| | - Eric Pop
- Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- Precourt Institute for Energy, Stanford University, Stanford, California 94305, United States
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25
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Van Schenck JDB, Mayonado G, Anthony JE, Graham MW, Ostroverkhova O. Molecular packing-dependent exciton dynamics in functionalized anthradithiophene derivatives: From solutions to crystals. J Chem Phys 2020; 153:164715. [PMID: 33138416 DOI: 10.1063/5.0026072] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
Understanding the impact of inter-molecular orientation on the optical properties of organic semiconductors is important for designing next-generation organic (opto)electronic and photonic devices. However, fundamental aspects of how various features of molecular packing in crystalline systems determine the nature and dynamics of excitons have been a subject of debate. Toward this end, we present a systematic study of how various molecular crystal packing motifs affect the optical properties of a class of high-performance organic semiconductors: functionalized derivatives of fluorinated anthradithiophene. The absorptive and emissive species present in three such derivatives (exhibiting "brickwork," "twisted-columnar," and "sandwich-herringbone" motifs, controlled by the side group R) were analyzed both in solution and in single crystals, using various modalities of optical and photoluminescence spectroscopy, revealing the nature of these excited states. In solution, in the emission band, two states were identified: a Franck-Condon state present at all concentrations and an excimer that emerged at higher concentrations. In single crystal systems, together with ab initio calculations, it was found in the absorptive band that Frenkel and Charge Transfer (CT) excitons mixed due to nonvanishing CT integrals in all derivatives, but the amount of admixture and exciton delocalization depended on the packing, with the "sandwich-herringbone" packing motif least conducive to delocalization. Three emissive species in the crystal phase were also identified: Frenkel excitons, entangled triplet pairs 1(TT) (which are precursors to forming free triplet states via singlet fission), and self-trapped excitons (STEs, similar in origin to excimers present in concentrated solution). The "twisted-columnar" packing motif was most conducive to the formation of Frenkel excitons delocalized over 4-7 molecules depending on the temperature. These delocalized Frenkel states were dominant across the full temperature range (78 K-293 K), though at lower temperatures, the entangled triplet states and STEs were present. In the derivative with the "brickwork" packing, all three emissive species were observed across the full temperature range and, most notably, the 1(TT) state was present at room temperature. Finally, the derivative with the "sandwich-herringbone" packing exhibited localized Frenkel excitons and had a strong propensity for self-trapped exciton formation even at higher temperatures. In this derivative, no formation of the 1(TT) state was observed. The temperature-dependent dynamics of these emissive states are reported, as well as their origin in fundamental inter-molecular interactions.
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Affiliation(s)
- J D B Van Schenck
- Department of Physics, Oregon State University, Corvallis, Oregon 97330, USA
| | - G Mayonado
- Department of Physics, Oregon State University, Corvallis, Oregon 97330, USA
| | - J E Anthony
- Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506, USA
| | - M W Graham
- Department of Physics, Oregon State University, Corvallis, Oregon 97330, USA
| | - O Ostroverkhova
- Department of Physics, Oregon State University, Corvallis, Oregon 97330, USA
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26
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Guo E, Wu Z, Darbandy G, Xing S, Wang SJ, Tahn A, Göbel M, Kloes A, Leo K, Kleemann H. Vertical organic permeable dual-base transistors for logic circuits. Nat Commun 2020; 11:4725. [PMID: 32948770 PMCID: PMC7501854 DOI: 10.1038/s41467-020-18576-5] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/22/2020] [Accepted: 08/21/2020] [Indexed: 11/30/2022] Open
Abstract
The main advantage of organic transistors with dual gates/bases is that the threshold voltages can be set as a function of the applied second gate/base bias, which is crucial for the application in logic gates and integrated circuits. However, incorporating a dual gate/base structure into an ultra-short channel vertical architecture represents a substantial challenge. Here, we realize a device concept of vertical organic permeable dual-base transistors, where the dual base electrodes can be used to tune the threshold voltages and change the on-currents. The detailed operation mechanisms are investigated by calibrated TCAD simulations. Finally, power-efficient logic circuits, e.g. inverter, NAND/AND computation functions are demonstrated with one single device operating at supply voltages of <2.0 V. We believe that this work offers a compact and technologically simple hardware platform with excellent application potential for vertical-channel organic transistors in complex logic circuits. The development of vertical organic transistors with controllable threshold voltage is highly desirable for integrated circuit-based displays and sensors. Here, the authors report vertical organic permeable dual-based transistors with independently tunable on-currents and threshold voltages.
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Affiliation(s)
- Erjuan Guo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
| | - Zhongbin Wu
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany. .,Frontiers Science Center for Flexible Electronics, Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, 710072, Xi'an, China.
| | - Ghader Darbandy
- NanoP, TH Mittelhessen, University of Applied Sciences, 35390, Giessen, Germany
| | - Shen Xing
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
| | - Shu-Jen Wang
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
| | - Alexander Tahn
- Dresden Center for Nanoanalysis (DCN), Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, 01062, Dresden, Germany
| | - Michael Göbel
- Leibniz-Institut für Polymerforschung Dresden e.V. (IPF), 01069, Dresden, Germany
| | - Alexander Kloes
- NanoP, TH Mittelhessen, University of Applied Sciences, 35390, Giessen, Germany
| | - Karl Leo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany.
| | - Hans Kleemann
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
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27
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Zeidell AM, Ren T, Filston DS, Iqbal HF, Holland E, Bourland JD, Anthony JE, Jurchescu OD. Organic Field-Effect Transistors as Flexible, Tissue-Equivalent Radiation Dosimeters in Medical Applications. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2001522. [PMID: 32999849 PMCID: PMC7509662 DOI: 10.1002/advs.202001522] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/24/2020] [Revised: 06/04/2020] [Indexed: 05/07/2023]
Abstract
Radiation therapy is one of the most prevalent procedures for cancer treatment, but the risks of malignancies induced by peripheral beam in healthy tissues surrounding the target is high. Therefore, being able to accurately measure the exposure dose is a critical aspect of patient care. Here a radiation detector based on an organic field-effect transistor (RAD-OFET) is introduced, an in vivo dosimeter that can be placed directly on a patient's skin to validate in real time the dose being delivered and ensure that for nearby regions an acceptable level of low dose is being received. This device reduces the errors faced by current technologies in approximating the dose profile in a patient's body, is sensitive for doses relevant to radiation treatment procedures, and robust when incorporated into conformal large-area electronics. A model is proposed to describe the operation of RAD-OFETs, based on the interplay between charge photogeneration and trapping.
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Affiliation(s)
- Andrew M. Zeidell
- Department of Physics and Center for Functional MaterialsWake Forest UniversityWinston‐SalemNC27109USA
| | - Tong Ren
- Department of Radiation OncologyWake Forest School of MedicineWake Forest UniversityWinston SalemNC27157USA
| | - David S. Filston
- Department of Physics and Center for Functional MaterialsWake Forest UniversityWinston‐SalemNC27109USA
| | - Hamna F. Iqbal
- Department of Physics and Center for Functional MaterialsWake Forest UniversityWinston‐SalemNC27109USA
| | - Emma Holland
- University of Kentucky Center for Applied Energy ResearchLexingtonKY40511USA
| | - J. Daniel Bourland
- Department of Radiation OncologyWake Forest School of MedicineWake Forest UniversityWinston SalemNC27157USA
| | - John E. Anthony
- University of Kentucky Center for Applied Energy ResearchLexingtonKY40511USA
| | - Oana D. Jurchescu
- Department of Physics and Center for Functional MaterialsWake Forest UniversityWinston‐SalemNC27109USA
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28
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Laudari A, Barron J, Pickett A, Guha S. Tuning Charge Transport in PVDF-Based Organic Ferroelectric Transistors: Status and Outlook. ACS APPLIED MATERIALS & INTERFACES 2020; 12:26757-26775. [PMID: 32436693 DOI: 10.1021/acsami.0c05731] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The use of polymer ferroelectric dielectrics in organic field-effect transistors (FETs) for nonvolatile memory application was demonstrated more than 15 years ago. The ferroelectric dielectric polyvinylidene fluoride (PVDF) and its copolymers are most widely used for such applications. In addition to memory applications, polymer ferroelectrics as a dielectric layer in organic FETs yield insights into interfacial transport properties. Advantages of polymer ferroelectric dielectrics are their high dielectric constant compared to other polymer dielectrics and their tunable dielectric constant with temperature. Further, the polarization strength may also be tuned by externally poling the ferroelectric dielectric layer. Thus, PVDF and its copolymers provide a unique testbed not just for investigating polarization induced transport in organic FETs, but also enhancing device performance. This article discusses recent developments of PVDF-based ferroelectric organic FETs and capacitors with a focus on tuning transport properties. It is shown that FET carrier mobilities exhibit a weak temperature dependence as long as the dielectric is in the ferroelectric phase, which is attributed to a polarization fluctuation driven process. The low carrier mobilities in PVDF-based FETs can be enhanced by tuning the poling condition of the dielectric. In particular, by using solution-processed small molecule semiconductors and other donor-acceptor copolymers, it is shown that selective poling of the PVDF-based dielectric layer dramatically improves FET properties. Finally, the prospects of further improvement in organic ferroelectric FETs and their challenges are provided.
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Affiliation(s)
- Amrit Laudari
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - John Barron
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - Alec Pickett
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - Suchismita Guha
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
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29
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Wang C, Fu B, Zhang X, Li R, Dong H, Hu W. Solution-Processed, Large-Area, Two-Dimensional Crystals of Organic Semiconductors for Field-Effect Transistors and Phototransistors. ACS CENTRAL SCIENCE 2020; 6:636-652. [PMID: 32490182 PMCID: PMC7256937 DOI: 10.1021/acscentsci.0c00251] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/01/2020] [Indexed: 06/11/2023]
Abstract
Organic electronics with π-conjugated organic semiconductors are promising candidates for the next electronics revolution. For the conductive channel, the large-area two-dimensional (2D) crystals of organic semiconductors (2DCOS) serve as useful scaffolds for modern organic electronics, benefiting not only from long-range order and low defect density nature but also from unique charge transport characteristic and photoelectrical properties. Meanwhile, the solution process with advantages of cost-effectiveness and room temperature compatibility is the foundation of high-throughput print electrical devices. Herein, we will give an insightful overview to witness the huge advances in 2DCOS over the past decade. First, the typical influencing factors and state-of-the-art assembly strategies of the solution-process for large-area 2DCOS over sub-millimeter even to wafer size are discussed accompanying rational evaluation. Then, the charge transport characteristics and contact resistance of 2DCOS-based transistors are explored. Following this, beyond single transistors, the p-n junction devices and planar integrated circuits based on 2DCOS are also emphasized. Furthermore, the burgeoning phototransistors (OPTs) based on crystals in the 2D limits are elaborated. Next, we emphasized the unique and enhanced photoelectrical properties based on a hybrid system with other 2D van der Waals solids. Finally, frontier insights and opportunities are proposed, promoting further research in this field.
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Affiliation(s)
- Cong Wang
- Tianjin
Key Laboratory of Molecular Optoelectronic Sciences, Department of
Chemistry, School of Science, Tianjin University
and Collaborative Innovation Center of Chemical Science and Engineering
(Tianjin), Tianjin 300072, China
| | - Beibei Fu
- Tianjin
Key Laboratory of Molecular Optoelectronic Sciences, Department of
Chemistry, School of Science, Tianjin University
and Collaborative Innovation Center of Chemical Science and Engineering
(Tianjin), Tianjin 300072, China
| | - Xiaotao Zhang
- Tianjin
Key Laboratory of Molecular Optoelectronic Sciences, Department of
Chemistry, School of Science, Tianjin University
and Collaborative Innovation Center of Chemical Science and Engineering
(Tianjin), Tianjin 300072, China
| | - Rongjin Li
- Tianjin
Key Laboratory of Molecular Optoelectronic Sciences, Department of
Chemistry, School of Science, Tianjin University
and Collaborative Innovation Center of Chemical Science and Engineering
(Tianjin), Tianjin 300072, China
| | - Huanli Dong
- Beijing
National Laboratory for Molecular Sciences, Key Laboratory of Organic
Solids, Institute of Chemistry, Chinese
Academy of Sciences, Beijing 100190, China
| | - Wenping Hu
- Tianjin
Key Laboratory of Molecular Optoelectronic Sciences, Department of
Chemistry, School of Science, Tianjin University
and Collaborative Innovation Center of Chemical Science and Engineering
(Tianjin), Tianjin 300072, China
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30
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Parida B, Yoon S, Ryu J, Hayase S, Jeong SM, Kang DW. Boosting the Conversion Efficiency Over 20% in MAPbI 3 Perovskite Planar Solar Cells by Employing a Solution-Processed Aluminum-Doped Nickel Oxide Hole Collector. ACS APPLIED MATERIALS & INTERFACES 2020; 12:22958-22970. [PMID: 32326692 DOI: 10.1021/acsami.0c04618] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Recently, nickel oxide (NiOx) thin films have been used as an efficient and robust hole transport layer (HTL) in inverted planar perovskite solar cells (IP-PSCs) to replace costly and unstable organic transport materials. However, the power conversion efficiency (PCE) of most IP-PSCs using NiOx HTLs is rather limited below 20% due to insufficient electronic conductivity of the NiOx. In this work, solution-processed Al-doped NiOx (ANO) films are suggested as HTLs for low-cost and stable IP-PSCs. The electrical conductivity of the NiOx film is significantly enhanced by Al doping, which effectively reduces the nonradiative recombination losses at the HTL-perovskite interfaces and boosts hole extraction/transportation. The device with undoped NiOx shows the best PCE of 16.56%, whereas ANO HTL (5% doping) contributes to achieving a PCE of 20.84%, which outperforms other CH3NH3PbI3 IP-PSCs with NiOx-based HTLs reported to date. Moreover, a reliability test (1728 h storage) shows that the performance stability is enhanced by approximately 11% by employing ANO HTLs. This investigation into ANO HTLs provides a new guideline for the further development of highly efficient and reliable IP-PSCs using low-cost and robust metal oxide HTLs.
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Affiliation(s)
- Bhaskar Parida
- School of Energy Systems Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Saemon Yoon
- School of Energy Systems Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Jun Ryu
- School of Energy Systems Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
| | - Shuzi Hayase
- Info-Powered Energy System Research Center, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan
| | - Sang Mun Jeong
- Department of Chemical Engineering, Chungbuk National University, Cheongju 28644, Republic of Korea
| | - Dong-Won Kang
- School of Energy Systems Engineering, Chung-Ang University, Seoul 06974, Republic of Korea
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31
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Schweicher G, Garbay G, Jouclas R, Vibert F, Devaux F, Geerts YH. Molecular Semiconductors for Logic Operations: Dead-End or Bright Future? ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1905909. [PMID: 31965662 DOI: 10.1002/adma.201905909] [Citation(s) in RCA: 57] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/10/2019] [Revised: 11/18/2019] [Indexed: 05/26/2023]
Abstract
The field of organic electronics has been prolific in the last couple of years, leading to the design and synthesis of several molecular semiconductors presenting a mobility in excess of 10 cm2 V-1 s-1 . However, it is also started to recently falter, as a result of doubtful mobility extractions and reduced industrial interest. This critical review addresses the community of chemists and materials scientists to share with it a critical analysis of the best performing molecular semiconductors and of the inherent charge transport physics that takes place in them. The goal is to inspire chemists and materials scientists and to give them hope that the field of molecular semiconductors for logic operations is not engaged into a dead end. To the contrary, it offers plenty of research opportunities in materials chemistry.
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Affiliation(s)
- Guillaume Schweicher
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
- Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Guillaume Garbay
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
| | - Rémy Jouclas
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
| | - François Vibert
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
| | - Félix Devaux
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
| | - Yves H Geerts
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
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32
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Wang Q, Jiang S, Zhang B, Shin EY, Noh YY, Xu Y, Shi Y, Li Y. Role of Schottky Barrier and Access Resistance in Organic Field-Effect Transistors. J Phys Chem Lett 2020; 11:1466-1472. [PMID: 32013442 DOI: 10.1021/acs.jpclett.9b03339] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Despite the increasing understanding of charge transport in organic field-effect transistors (OFETs), charge injection from source/drain electrodes into organic semiconductors remains crucial for improving device performance and lowering power consumption. The analysis of contact resistance is generally carried out without clearly distinguishing the Schottky barrier and access resistance. Here we show that the access resistance through the organic semiconductor bulk can significantly influence the Schottky barrier evaluation and affect the charge-transport exploration. Indeed, access resistance plays a leading role in the contact resistance, whereas the Schottky barrier (expressed as the interface resistance) determines the charge injection at the metal/semiconductor interface. The Schottky barrier evaluation strongly depends on the access resistance and bias voltage. After eliminating the access resistance effect, the intrinsic Schottky barrier appears to be very coincident and weakly dependent on the work function of the contact metal. This work provides clues to understanding the Schottky barrier and charge injection in OFETs to optimize OFETs for high-performance and advanced applications.
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Affiliation(s)
- Qijing Wang
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Sai Jiang
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Bowen Zhang
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Eul-Yong Shin
- Department of Chemical Engineering , Pohang University of Science and Technology , 77 Cheongam-Ro, Nam-Gu , Pohang 37673 , Republic of Korea
| | - Yong-Young Noh
- Department of Chemical Engineering , Pohang University of Science and Technology , 77 Cheongam-Ro, Nam-Gu , Pohang 37673 , Republic of Korea
| | - Yong Xu
- College of Electronic and Optical Engineering & College of Microelectronics , Nanjing University of Posts and Telecommunications , Nanjing 210023 , China
| | - Yi Shi
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
| | - Yun Li
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , China
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Petty AJ, Ai Q, Sorli JC, Haneef HF, Purdum GE, Boehm A, Granger DB, Gu K, Rubinger CPL, Parkin SR, Graham KR, Jurchescu OD, Loo YL, Risko C, Anthony JE. Computationally aided design of a high-performance organic semiconductor: the development of a universal crystal engineering core. Chem Sci 2019; 10:10543-10549. [PMID: 32055377 PMCID: PMC6988752 DOI: 10.1039/c9sc02930c] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/14/2019] [Accepted: 09/29/2019] [Indexed: 11/21/2022] Open
Abstract
Herein, we describe the design and synthesis of a suite of molecules based on a benzodithiophene "universal crystal engineering core". After computationally screening derivatives, a trialkylsilylethyne-based crystal engineering strategy was employed to tailor the crystal packing for use as the active material in an organic field-effect transistor. Electronic structure calculations were undertaken to reveal derivatives that exhibit exceptional potential for high-efficiency hole transport. The promising theoretical properties are reflected in the preliminary device results, with the computationally optimized material showing simple solution processing, enhanced stability, and a maximum hole mobility of 1.6 cm2 V-1 s-1.
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Affiliation(s)
- Anthony J Petty
- Department of Chemistry , University of Kentucky , Lexington , Kentucky 40506-0055 , USA .
| | - Qianxiang Ai
- Department of Chemistry , University of Kentucky , Lexington , Kentucky 40506-0055 , USA .
| | - Jeni C Sorli
- Department of Chemical and Biological Engineering , Princeton University , Princeton , New Jersey 08544 , USA
| | - Hamna F Haneef
- Department of Physics and Center for Functional Materials , Wake Forest University , USA
| | - Geoffrey E Purdum
- Department of Chemical and Biological Engineering , Princeton University , Princeton , New Jersey 08544 , USA
| | - Alex Boehm
- Department of Chemistry , University of Kentucky , Lexington , Kentucky 40506-0055 , USA .
| | - Devin B Granger
- Department of Chemistry , University of Kentucky , Lexington , Kentucky 40506-0055 , USA .
| | - Kaichen Gu
- Department of Chemical and Biological Engineering , Princeton University , Princeton , New Jersey 08544 , USA
| | | | - Sean R Parkin
- Department of Chemistry , University of Kentucky , Lexington , Kentucky 40506-0055 , USA .
| | - Kenneth R Graham
- Department of Chemistry , University of Kentucky , Lexington , Kentucky 40506-0055 , USA .
| | - Oana D Jurchescu
- Department of Physics and Center for Functional Materials , Wake Forest University , USA
| | - Yueh-Lin Loo
- Department of Chemical and Biological Engineering , Princeton University , Princeton , New Jersey 08544 , USA
- Andlinger Center for Energy and the Environment , Princeton University , Princeton , New Jersey 08544 , USA
| | - Chad Risko
- Department of Chemistry , University of Kentucky , Lexington , Kentucky 40506-0055 , USA .
- Center for Applied Energy Research , University of Kentucky , Lexington , Kentucky 40511 , USA
| | - John E Anthony
- Department of Chemistry , University of Kentucky , Lexington , Kentucky 40506-0055 , USA .
- Center for Applied Energy Research , University of Kentucky , Lexington , Kentucky 40511 , USA
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Un H, Wang J, Pei J. Recent Efforts in Understanding and Improving the Nonideal Behaviors of Organic Field-Effect Transistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2019; 6:1900375. [PMID: 31637154 PMCID: PMC6794634 DOI: 10.1002/advs.201900375] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2019] [Revised: 08/02/2019] [Indexed: 05/20/2023]
Abstract
Over the past three decades, the mobility of organic field-effect transistors (OFETs) has been improved from 10-5 up to over 10 cm2 V-1 s-1, which reaches or has already satisfied the requirements of demanding applications. However, pronounced nonideal behaviors in current-voltage characteristics are commonly observed, which indicates that the reported mobilities may not truly reflect the device properties. Herein, a comprehensive understanding of the origins of several observed nonidealities (downward, upward, double-slope, superlinear, and humped transfer characteristics) is summarized, and how to extract comparatively reliable mobilities from nonideal behaviors in OFETs is discussed. Combining an overview of the ideal and state-of-the-art OFETs, considerable possible approaches are also provided for future OFETs.
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Affiliation(s)
- Hio‐Ieng Un
- Beijing National Laboratory for Molecular Sciences (BNLMS)Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of EducationKey Laboratory of Polymer Chemistry and Physics of Ministry of EducationCenter of Soft Matter Science and EngineeringCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing100871China
| | - Jie‐Yu Wang
- Beijing National Laboratory for Molecular Sciences (BNLMS)Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of EducationKey Laboratory of Polymer Chemistry and Physics of Ministry of EducationCenter of Soft Matter Science and EngineeringCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing100871China
| | - Jian Pei
- Beijing National Laboratory for Molecular Sciences (BNLMS)Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of EducationKey Laboratory of Polymer Chemistry and Physics of Ministry of EducationCenter of Soft Matter Science and EngineeringCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing100871China
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Paterson AF, Faber H, Savva A, Nikiforidis G, Gedda M, Hidalgo TC, Chen X, McCulloch I, Anthopoulos TD, Inal S. On the Role of Contact Resistance and Electrode Modification in Organic Electrochemical Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1902291. [PMID: 31343087 DOI: 10.1002/adma.201902291] [Citation(s) in RCA: 31] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2019] [Revised: 06/23/2019] [Indexed: 06/10/2023]
Abstract
Contact resistance is renowned for its unfavorable impact on transistor performance. Despite its notoriety, the nature of contact resistance in organic electrochemical transistors (OECTs) remains unclear. Here, by investigating the role of contact resistance in n-type OECTs, the first demonstration of source/drain-electrode surface modification for achieving state-of-the-art n-type OECTs is reported. Specifically, thiol-based self-assembled monolayers (SAMs), 4-methylbenzenethiol (MBT) and pentafluorobenzenethiol (PFBT), are used to investigate contact resistance in n-type accumulation-mode OECTs made from the hydrophilic copolymer P-90, where the deliberate functionalization of the gold source/drain electrodes decreases and increases the energetic mismatch at the electrode/semiconductor interface, respectively. Although MBT treatment is found to increase the transconductance three-fold, contact resistance is not found to be the dominant factor governing OECT performance. Additional morphology and surface energy investigations show that increased performance comes from SAM-enhanced source/drain electrode surface energy, which improves wetting, semiconductor/metal interface quality, and semiconductor morphology at the electrode and channel. Overall, contact resistance in n-type OECTs is investigated, whilst identifying source/drain electrode treatment as a useful device engineering strategy for achieving state of the art n-type OECTs.
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Affiliation(s)
- Alexandra F Paterson
- Biological and Environmental Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Hendrik Faber
- Division of Physical Sciences and Engineering, KAUST Solar Centre, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Achilleas Savva
- Biological and Environmental Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Georgios Nikiforidis
- Biological and Environmental Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Murali Gedda
- Division of Physical Sciences and Engineering, KAUST Solar Centre, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Tania C Hidalgo
- Biological and Environmental Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Xingxing Chen
- Division of Physical Sciences and Engineering, KAUST Solar Centre, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Iain McCulloch
- Division of Physical Sciences and Engineering, KAUST Solar Centre, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
- Department of Chemistry and Centre for Plastic Electronics, Imperial College London, South Kensington, London, SW7 2AZ, UK
| | - Thomas D Anthopoulos
- Division of Physical Sciences and Engineering, KAUST Solar Centre, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Sahika Inal
- Biological and Environmental Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
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36
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He Z, Zhang Z, Bi S. Long-range crystal alignment with polymer additive for organic thin film transistors. JOURNAL OF POLYMER RESEARCH 2019. [DOI: 10.1007/s10965-019-1842-1] [Citation(s) in RCA: 17] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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37
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He Z, Zhang Z, Bi S. Nanoscale alignment of semiconductor crystals for high-fidelity organic electronics applications. APPLIED NANOSCIENCE 2019. [DOI: 10.1007/s13204-019-01068-4] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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