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Liu G, Ke SH. Electronic and Transport Engineering of A-Type Antiferromagnets with Ferroelectric Sandwich Structure: Toward Multistate Nonvolatile Memory Applications. NANO LETTERS 2024. [PMID: 39166958 DOI: 10.1021/acs.nanolett.4c01916] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/23/2024]
Abstract
Achieving higher-order multistates with mutual interstate switching at the nanoscale is essential for high-density storage devices; yet, it remains a significant challenge. Here, we demonstrate that integrating A-type antiferromagnetic semiconductors sandwiched between ferroelectric layers is an effective strategy to achieve high-performance multistate data storage. Taking the Sc2CO2/VSi2P4 bilayer (bi-VSi2P4)/Sc2CO2 van der Waals multiferroic heterostructure as an example, our first-principles calculations show that by switching the polarization direction of the upper and bottom ferroelectric Sc2CO2 layers, antiferromagnetic bi-VSi2P4 can exhibit four distinct states with different band structures. The intriguing band structure engineering stems from the polarization-field-induced band shift and interface charge transfer. Accordingly, the proposed Sc2CO2/bi-VSi2P4/Sc2CO2-based multiferroic device can achieve four different resistance states, accompanied by fully spin-polarized currents and giant tunneling electroresistance ratios. Our results propose a viable strategy for realizing nonvolatile electrical control of antiferromagnets at the nanoscale and provide insights into the development of advanced memories.
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Affiliation(s)
- Guogang Liu
- MOE Key Laboratory of Microstructured Materials, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| | - San-Huang Ke
- MOE Key Laboratory of Microstructured Materials, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
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2
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Song J, Ebihara Y, Yudin P, Sakata O, Morioka H, Kiguchi T, Kondo S, Yuan X, Okamura S, Yoshino M, Nagasaki T, Yamada T. Novel Route for Enhancing Piezoelectricity of Ferroelectric Films: Controlling Nontrivial Polarization States in Pb(Zr, Ti)O 3 Monodomain Superlattice Structure. ACS APPLIED MATERIALS & INTERFACES 2024; 16:16145-16151. [PMID: 38515379 DOI: 10.1021/acsami.3c18721] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/23/2024]
Abstract
Artificial superlattice films made of Pb(Zr0.4Ti0.6)O3 and Pb(Zr0.6Ti0.4)O3 were investigated for their polarization states and piezoelectric properties theoretically and experimentally in this study. The developed theory predicts nontrivial polarization along neither [001] nor [111] directions in (111)-epitaxial monodomain superlattice films with uniform compressive strain. Such films were achieved via pulsed laser deposition. When the layer thickness is reduced to 3 nm, d33 becomes 128 ± 3.8 pm/V at 100 kV/cm and 71.3 ± 2.83 pm/V at 600 kV/cm, comparable to that of (111)-oriented Pb(Zr0.4Ti0.6)O3 or Pb(Zr0.6Ti0.4)O3 bulks and clearly exceeding that of the typical clamped films. The measurement agrees with the theoretical analysis, which reveals that the enhanced piezoelectricity is due to rotation of the nontrivial polarization. Furthermore, the theoretical study predicts an even larger d33 exceeding 300 pm/V for specific parameters in superlattice films with uniform tensile strain, which is promising for applications of microelectromechanical systems.
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Affiliation(s)
- Jundong Song
- Department of Energy Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
- Department of Applied Physics, Tokyo University of Science, 6-3-1 Niijuku, Katsushika-ku, Tokyo 125-8585, Japan
| | - Youhei Ebihara
- Department of Energy Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
| | - Petr Yudin
- Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, Praha 8 18221, Czech Republic
| | - Osami Sakata
- Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Kouto, Sayo, Hyogo 679-5198, Japan
- Synchrotron X-ray Group, Research Center for Advanced Measurement and Characterization, National Institute for Materials Science (NIMS), 1-1-1, Kouto, Sayo, Hyogo 679-5148, Japan
| | - Hitoshi Morioka
- Application Department, X-ray Division, Bruker Japan K.K., Yokohama 221-0022, Japan
| | - Takanori Kiguchi
- Magnesium Research Center, Kumamoto University, Chuo-ku, Kurokami, Kumamoto 860-8555, Japan
| | - Shinya Kondo
- Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530, Japan
| | - Xueyou Yuan
- Department of Energy Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
| | - Soichiro Okamura
- Department of Applied Physics, Tokyo University of Science, 6-3-1 Niijuku, Katsushika-ku, Tokyo 125-8585, Japan
| | - Masahito Yoshino
- Department of Energy Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
| | - Takanori Nagasaki
- Department of Energy Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
| | - Tomoaki Yamada
- Department of Energy Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
- PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012, Japan
- MDX Research Center for Element Strategy, International Research Frontiers Initiative, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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3
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Li T, Wu Y, Yu G, Li S, Ren Y, Liu Y, Liu J, Feng H, Deng Y, Chen M, Zhang Z, Min T. Realization of sextuple polarization states and interstate switching in antiferroelectric CuInP 2S 6. Nat Commun 2024; 15:2653. [PMID: 38531845 DOI: 10.1038/s41467-024-46891-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/06/2023] [Accepted: 03/14/2024] [Indexed: 03/28/2024] Open
Abstract
Realization of higher-order multistates with mutual interstate switching in ferroelectric materials is a perpetual drive for high-density storage devices and beyond-Moore technologies. Here we demonstrate experimentally that antiferroelectric van der Waals CuInP2S6 films can be controllably stabilized into double, quadruple, and sextuple polarization states, and a system harboring polarization order of six is also reversibly tunable into order of four or two. Furthermore, for a given polarization order, mutual interstate switching can be achieved via moderate electric field modulation. First-principles studies of CuInP2S6 multilayers help to reveal that the double, quadruple, and sextuple states are attributable to the existence of respective single, double, and triple ferroelectric domains with antiferroelectric interdomain coupling and Cu ion migration. These findings offer appealing platforms for developing multistate ferroelectric devices, while the underlining mechanism is transformative to other non-volatile material systems.
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Affiliation(s)
- Tao Li
- Centre for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, 710049, Xi'an, China
| | - Yongyi Wu
- Centre for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, 710049, Xi'an, China
| | - Guoliang Yu
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Centre for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, 410081, Changsha, China
| | - Shengxian Li
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Centre for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, 410081, Changsha, China
| | - Yifeng Ren
- Solid State Microstructure National Key Lab and Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Yadong Liu
- Centre for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, 710049, Xi'an, China
| | - Jiarui Liu
- Centre for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, 710049, Xi'an, China
| | - Hao Feng
- Centre for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, 710049, Xi'an, China
| | - Yu Deng
- Solid State Microstructure National Key Lab and Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Mingxing Chen
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Centre for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, 410081, Changsha, China.
- State Key Laboratory of Powder Metallurgy, Central South University, 410083, Changsha, China.
| | - Zhenyu Zhang
- International Center for Quantum Design of Functional Materials (ICQD) and Hefei National Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China.
| | - Tai Min
- Centre for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, 710049, Xi'an, China.
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4
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Qin S, Guo Y, Kaliyev AT, Agar JC. Why it is Unfortunate that Linear Machine Learning "Works" so well in Electromechanical Switching of Ferroelectric Thin Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2202814. [PMID: 35906007 DOI: 10.1002/adma.202202814] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2022] [Revised: 07/07/2022] [Indexed: 06/15/2023]
Abstract
Machine learning (ML) is relied on for materials spectroscopy. It is challenging to make ML models fail because statistical correlations can mimic the physics without causality. Here, using a benchmark band-excitation piezoresponse force microscopy polarization spectroscopy (BEPS) dataset the pitfalls of the so-called "better", "faster", and "less-biased" ML of electromechanical switching are demonstrated and overcome. Using a toy and real experimental dataset, it is demonstrated how linear nontemporal ML methods result in physically reasonable embedding (eigenvalues) while producing nonsensical eigenvectors and generated spectra, promoting misleading interpretations. A new method of unsupervised multimodal hyperspectral analysis of BEPS is demonstrated using long-short-term memory (LSTM) β-variational autoencoders (β-VAEs) . By including LSTM neurons, the ordinal nature of ferroelectric switching is considered. To improve the interpretability of the latent space, a variational Kullback-Leibler-divergency regularization is imposed . Finally, regularization scheduling of β as a disentanglement metric is leveraged to reduce user bias. Combining these experiment-inspired modifications enables the automated detection of ferroelectric switching mechanisms, including a complex two-step, three-state one. Ultimately, this work provides a robust ML method for the rapid discovery of electromechanical switching mechanisms in ferroelectrics and is applicable to other multimodal hyperspectral materials spectroscopies.
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Affiliation(s)
- Shuyu Qin
- Department of Computer Science and Engineering, Lehigh University, Bethlehem, PA, 18015, USA
| | - Yichen Guo
- Department of Materials Science and Engineering, Lehigh University, Bethlehem, PA, 18015, USA
| | - Alibek T Kaliyev
- Department of Computer Science and Engineering, Lehigh University, Bethlehem, PA, 18015, USA
- College of Business, Lehigh University, Bethlehem, PA, 18015, USA
| | - Joshua C Agar
- Department of Materials Science and Engineering, Lehigh University, Bethlehem, PA, 18015, USA
- Department of Mechanical Engineering and Mechanics, Drexel University, Philadelphia, PA, 19104, USA
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5
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Ræder TM, Qin S, Zachman MJ, Vasudevan RK, Grande T, Agar JC. High Velocity, Low-Voltage Collective In-Plane Switching in (100) BaTiO 3 Thin Films. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2201530. [PMID: 36031394 PMCID: PMC9561770 DOI: 10.1002/advs.202201530] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/16/2022] [Revised: 06/15/2022] [Indexed: 06/15/2023]
Abstract
Ferroelectrics are being increasingly called upon for electronic devices in extreme environments. Device performance and energy efficiency is highly correlated to clock frequency, operational voltage, and resistive loss. To increase performance it is common to engineer ferroelectric domain structure with highly-correlated electrical and elastic coupling that elicit fast and efficient collective switching. Designing domain structures with advantageous properties is difficult because the mechanisms involved in collective switching are poorly understood and difficult to investigate. Collective switching is a hierarchical process where the nano- and mesoscale responses control the macroscopic properties. Using chemical solution synthesis, epitaxially nearly-relaxed (100) BaTiO3 films are synthesized. Thermal strain induces a strongly-correlated domain structure with alternating domains of polarization along the [010] and [001] in-plane axes and 90° domain walls along the [011] or [01 1 ¯ $\bar{1}$ ] directions. Simultaneous capacitance-voltage measurements and band-excitation piezoresponse force microscopy revealed strong collective switching behavior. Using a deep convolutional autoencoder, hierarchical switching is automatically tracked and the switching pathway is identified. The collective switching velocities are calculated to be ≈500 cm s-1 at 5 V (7 kV cm-1 ), orders-of-magnitude faster than expected. These combinations of properties are promising for high-speed tunable dielectrics and low-voltage ferroelectric memories and logic.
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Affiliation(s)
- Trygve M. Ræder
- Department of PhysicsDTU Danmarks Tekniske UniversitetKgs. Lyngby2800Denmark
- Department of Materials Science and EngineeringNTNU Norwegian University of Science and TechnologyTrondheimNO‐7491Norway
| | - Shuyu Qin
- Department of Computer Science and EngineeringLehigh UniversityBethlehemPA18015USA
| | - Michael J. Zachman
- The Center for Nanophase Materials SciencesOak Ridge National LaboratoryOak RidgeTN37831USA
| | - Rama K. Vasudevan
- The Center for Nanophase Materials SciencesOak Ridge National LaboratoryOak RidgeTN37831USA
| | - Tor Grande
- Department of Materials Science and EngineeringNTNU Norwegian University of Science and TechnologyTrondheimNO‐7491Norway
| | - Joshua C. Agar
- Department of Materials Science and EngineeringLehigh UniversityBethlehemPA18015USA
- Department of Mechanical Engineering and MechanicsDrexel UniversityPhiladelphiaPA19104USA
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6
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Lee YJ, Hong K, Na K, Yang J, Lee TH, Kim B, Bark CW, Kim JY, Park SH, Lee S, Jang HW. Nonvolatile Control of Metal-Insulator Transition in VO 2 by Ferroelectric Gating. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2203097. [PMID: 35713476 DOI: 10.1002/adma.202203097] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2022] [Revised: 06/09/2022] [Indexed: 06/15/2023]
Abstract
Controlling phase transitions in correlated materials yields emergent functional properties, providing new aspects to future electronics and a fundamental understanding of condensed matter systems. With vanadium dioxide (VO2 ), a representative correlated material, an approach to control a metal-insulator transition (MIT) behavior is developed by employing a heteroepitaxial structure with a ferroelectric BiFeO3 (BFO) layer to modulate the interaction of correlated electrons. Owing to the defect-alleviated interfaces, the enhanced coupling between the correlated electrons and ferroelectric polarization is successfully demonstrated by showing a nonvolatile control of MIT of VO2 at room temperature. The ferroelectrically-tunable MIT can be realized through the Mott transistor (VO2 /BFO/SrRuO3 ) with a remanent polarization of 80 µC cm-2 , leading to a nonvolatile MIT behavior through the reversible electrical conductance with a large on/off ratio (≈102 ), long retention time (≈104 s), and high endurance (≈103 cycles). Furthermore, the structural phase transition of VO2 is corroborated by ferroelectric polarization through in situ Raman mapping analysis. This study provides novel design principles for heteroepitaxial correlated materials and innovative insight to modulate multifunctional properties.
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Affiliation(s)
- Yoon Jung Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Kootak Hong
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
- Department of Material Science and Engineering, Chonnam National University, Gwangju, 61186, Republic of Korea
| | - Kyeongho Na
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
| | - Jiwoong Yang
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
| | - Tae Hyung Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Byungsoo Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Chung Wung Bark
- Department of Electrical Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, South Korea
| | - Jae Young Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Sung Hyuk Park
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Sanghan Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
| | - Ho Won Jang
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
- Advanced Institute of Convergence Technology, Seoul National University, Suwon, 16229, Republic of Korea
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7
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Huang J, Duan X, Jeon S, Kim Y, Zhou J, Li J, Liu S. On-demand quantum spin Hall insulators controlled by two-dimensional ferroelectricity. MATERIALS HORIZONS 2022; 9:1440-1447. [PMID: 35438108 DOI: 10.1039/d2mh00334a] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
We propose a new class of quantum materials, type-II two-dimensional ferroelectric topological insulators (2DFETIs), which allow non-volatility and an on-off switch of quantum spin Hall states. A general strategy is developed to realize type-II 2DFETIs using only topologically trivial 2D ferroelectrics. The built-in electric field arising from the out-of-plane polarization across the bilayer heterostrucuture of 2D ferroelectrics enables robust control of the band gap size and band inversion strength, which can be utilized to manipulate the topological phase transitions on-demand. Using first-principles calculations with hybrid density functionals, we demonstrate that a series of bilayer heterostructures are type-II 2DFETIs characterized with a direct coupling between the band topology and polarization state. We propose a few 2DFETI-based quantum electronics, including domain-wall quantum circuits and topological memristors.
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Affiliation(s)
- Jiawei Huang
- Zhejiang University, Hangzhou, Zhejiang 310058, P. R. China
- Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang 310024, China.
| | - Xu Duan
- Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang 310024, China.
- Fudan University, Shanghai 200433, China
| | - Sunam Jeon
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea
| | - Youngkuk Kim
- Department of Physics, Sungkyunkwan University, Suwon 16419, Korea
| | - Jian Zhou
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jian Li
- Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang 310024, China.
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang 310024, China
| | - Shi Liu
- Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang 310024, China.
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang 310024, China
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8
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Shi Q, Parsonnet E, Cheng X, Fedorova N, Peng RC, Fernandez A, Qualls A, Huang X, Chang X, Zhang H, Pesquera D, Das S, Nikonov D, Young I, Chen LQ, Martin LW, Huang YL, Íñiguez J, Ramesh R. The role of lattice dynamics in ferroelectric switching. Nat Commun 2022; 13:1110. [PMID: 35236832 PMCID: PMC8891289 DOI: 10.1038/s41467-022-28622-z] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/09/2021] [Accepted: 02/03/2022] [Indexed: 11/10/2022] Open
Abstract
Reducing the switching energy of ferroelectric thin films remains an important goal in the pursuit of ultralow-power ferroelectric memory and logic devices. Here, we elucidate the fundamental role of lattice dynamics in ferroelectric switching by studying both freestanding bismuth ferrite (BiFeO3) membranes and films clamped to a substrate. We observe a distinct evolution of the ferroelectric domain pattern, from striped, 71° ferroelastic domains (spacing of ~100 nm) in clamped BiFeO3 films, to large (10’s of micrometers) 180° domains in freestanding films. By removing the constraints imposed by mechanical clamping from the substrate, we can realize a ~40% reduction of the switching voltage and a consequent ~60% improvement in the switching speed. Our findings highlight the importance of a dynamic clamping process occurring during switching, which impacts strain, ferroelectric, and ferrodistortive order parameters and plays a critical role in setting the energetics and dynamics of ferroelectric switching. Reducing the switching energy of ferroelectric films remains an important goal. Here, the authors elucidate the fundamental role of lattice dynamics in ferroelectric switching on both freestanding BiFeO3 membranes and films clamped to a substrate.
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Affiliation(s)
- Qiwu Shi
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA. .,College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, China.
| | - Eric Parsonnet
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Xiaoxing Cheng
- Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania, 16802, PA, USA
| | - Natalya Fedorova
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, L-4362, Esch/Alzette, Luxembourg
| | - Ren-Ci Peng
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Information and Engineering, Xi'an Jiaotong University, 710049, Xi'an, China.,School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, China
| | - Abel Fernandez
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Alexander Qualls
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Xiaoxi Huang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Xue Chang
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, China
| | - Hongrui Zhang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - David Pesquera
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Sujit Das
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.,Material Research Centre, Indian Institute of Science, Bangalore, 560012, India
| | - Dmitri Nikonov
- Components Research, Intel Corporation, Hillsboro, OR, 97142, USA
| | - Ian Young
- Components Research, Intel Corporation, Hillsboro, OR, 97142, USA
| | - Long-Qing Chen
- Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania, 16802, PA, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Yen-Lin Huang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA. .,Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, L-4362, Esch/Alzette, Luxembourg.,Department of Physics and Materials Science, University of Luxembourg, L-4422, Belvaux, Luxembourg
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA. .,Department of Physics, University of California, Berkeley, CA, 94720, USA. .,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
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9
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Yang K, Cao Y, Zhang Y, Fan S, Tang M, Aberg D, Sadigh B, Zhou F. Self-supervised learning and prediction of microstructure evolution with convolutional recurrent neural networks. PATTERNS (NEW YORK, N.Y.) 2021; 2:100243. [PMID: 34036288 PMCID: PMC8134942 DOI: 10.1016/j.patter.2021.100243] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/15/2020] [Revised: 03/02/2021] [Accepted: 03/30/2021] [Indexed: 12/18/2022]
Abstract
Microstructural evolution is a key aspect of understanding and exploiting the processing-structure-property relationship of materials. Modeling microstructure evolution usually relies on coarse-grained simulations with evolution principles described by partial differential equations (PDEs). Here we demonstrate that convolutional recurrent neural networks can learn the underlying physical rules and replace PDE-based simulations in the prediction of microstructure phenomena. Neural nets are trained by self-supervised learning with image sequences from simulations of several common processes, including plane-wave propagation, grain growth, spinodal decomposition, and dendritic crystal growth. The trained networks can accurately predict both short-term local dynamics and long-term statistical properties of microstructures assessed herein and are capable of extrapolating beyond the training datasets in spatiotemporal domains and configurational and parametric spaces. Such a data-driven approach offers significant advantages over PDE-based simulations in time-stepping efficiency and offers a useful alternative, especially when the material parameters or governing PDEs are not well determined.
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Affiliation(s)
- Kaiqi Yang
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX 77005, USA
| | - Yifan Cao
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX 77005, USA
| | - Youtian Zhang
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX 77005, USA
| | - Shaoxun Fan
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX 77005, USA
| | - Ming Tang
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX 77005, USA
| | - Daniel Aberg
- Physical and Life Sciences Directorate, Lawrence Livermore National Laboratory, Livermore, CA 94550, USA
| | - Babak Sadigh
- Physical and Life Sciences Directorate, Lawrence Livermore National Laboratory, Livermore, CA 94550, USA
| | - Fei Zhou
- Physical and Life Sciences Directorate, Lawrence Livermore National Laboratory, Livermore, CA 94550, USA
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10
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Effect of Buffer Layer Capacitance on the Electrical Characteristics of Ferroelectric Polymer Capacitors and Field Effect Transistors. MATERIALS 2021; 14:ma14051276. [PMID: 33800191 PMCID: PMC7962438 DOI: 10.3390/ma14051276] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/15/2021] [Revised: 03/04/2021] [Accepted: 03/04/2021] [Indexed: 11/17/2022]
Abstract
We demonstrated the effect of a buffer layer on the electrical characteristics of ferroelectric polymer capacitors and field-effect transistors. Various polymer materials with a dielectric constant between 2 and 42 were used to form buffer layers with a similar thicknesses, but with different capacitances. In order to evaluate the characteristics of the ferroelectrics with a buffer layer, the polarization–voltage characteristics of the capacitor, the transfer characteristics, and the retention characteristics of the transistors were investigated. As the capacitance of the buffer layer increased, high remnant polarization (Pr), high hysteresis, and long retention times were observed. Exceptionally, when poly(methylmethacrylate) and rigid poly(aryl ether) (poly(9,9-bis(4-hydroxyphenyl)fluorene-co-decafluorobiphenyl)) were used as the buffer layer, Pr had a value close to 0 in the dynamic measurement polarization–voltage (P–V) characteristic, but the quasi-static measurement transfer characteristic and the static measurement retention characteristic showed relatively high hysteresis and long retention times. Our study provides a scientific and technical basis for the design of ferroelectric memory and neuromorphic devices.
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Li H, Wang R, Han S, Zhou Y. Ferroelectric polymers for non‐volatile memory devices: a review. POLYM INT 2020. [DOI: 10.1002/pi.5980] [Citation(s) in RCA: 31] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
Affiliation(s)
- Huilin Li
- Institute of Microscale Optoelectronics, Shenzhen University Shenzhen PR China
- Henan Key Laboratory of Photovoltaic MaterialsHenan University Kaifeng PR China
| | - Ruopeng Wang
- College of Electronics and Information EngineeringShenzhen University Shenzhen PR China
| | - Su‐Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University Shenzhen PR China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University Shenzhen PR China
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Lee K, Lee HJ, Lee TY, Lim HH, Song MS, Yoo HK, Suh DI, Lee JG, Zhu Z, Yoon A, MacDonald MR, Lei X, Park K, Park J, Lee JH, Chae SC. Stable Subloop Behavior in Ferroelectric Si-Doped HfO 2. ACS APPLIED MATERIALS & INTERFACES 2019; 11:38929-38936. [PMID: 31576734 DOI: 10.1021/acsami.9b12878] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The recent demand for analogue devices for neuromorphic applications requires modulation of multiple nonvolatile states. Ferroelectricity with multiple polarization states enables neuromorphic applications with various architectures. However, deterministic control of ferroelectric polarization states with conventional ferroelectric materials has been met with accessibility issues. Here, we report unprecedented stable accessibility with robust stability of multiple polarization states in ferroelectric HfO2. Through the combination of conventional voltage measurements, hysteresis temperature dependence analysis, piezoelectric force microscopy, first-principles calculations, and Monte Carlo simulations, we suggest that the unprecedented stability of intermediate states in ferroelectric HfO2 is due to the small critical volume size for nucleation and the large activation energy for ferroelectric dipole flipping. This work demonstrates the potential of ferroelectric HfO2 for analogue device applications enabling neuromorphic computing.
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Affiliation(s)
| | - Hyun-Jae Lee
- School of Energy and Chemical Engineering , Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919 , Korea
| | | | | | | | - Hyang Keun Yoo
- SK Hynix Incorporation , Icheon-si , Gyeonggi-do 17336 , Korea
| | - Dong Ik Suh
- SK Hynix Incorporation , Icheon-si , Gyeonggi-do 17336 , Korea
| | - Jae Gil Lee
- SK Hynix Incorporation , Icheon-si , Gyeonggi-do 17336 , Korea
| | - Zhongwei Zhu
- Lam Research Corporation , Fremont , California 94538 , United States
| | - Alexander Yoon
- Lam Research Corporation , Fremont , California 94538 , United States
| | - Matthew R MacDonald
- Versum Materials Incorporation , Carlsbad , California 92011 , United States
| | - Xinjian Lei
- Versum Materials Incorporation , Carlsbad , California 92011 , United States
| | - Kunwoo Park
- Center for Nanoparticle Research , Institute for Basic Science (IBS) , Seoul 08826 , Korea
| | - Jungwon Park
- Center for Nanoparticle Research , Institute for Basic Science (IBS) , Seoul 08826 , Korea
| | - Jun Hee Lee
- School of Energy and Chemical Engineering , Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919 , Korea
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Wu M, Song D, Guo M, Bian J, Li J, Yang Y, Huang H, Pennycook SJ, Lou X. Remarkably Enhanced Negative Electrocaloric Effect in PbZrO 3 Thin Film by Interface Engineering. ACS APPLIED MATERIALS & INTERFACES 2019; 11:36863-36870. [PMID: 31525289 DOI: 10.1021/acsami.9b13143] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The electrocaloric effect in ferroelectric materials has drawn much attention due to its potential applications in integrated circuit cooling and novel cooling devices. In contrast to the widely researched positive electrocaloric effect, the negative electrocaloric effect has received much less attention due to the lack of any effective methods for significant enhancement. In this work, we fabricated PbZrO3 thin film on a Pt/Si substrate by the sol-gel method. By controlling the interface conditions between the thin film and substrate, we induced defects into the interface and stabilized a transient ferroelectric phase in the PbZrO3 thin film. The emergence of the transient ferroelectric phase postpones the antiferroelectric-ferroelectric phase transition. As a result, a negative electrocaloric effect up to -18.5 K is estimated near room temperature, the highest one ever reported in this temperature range. This result suggests a new strategy to enhance the negative electrocaloric effect and may benefit the application of PbZrO3 thin films in cooling devices.
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Affiliation(s)
- Ming Wu
- Frontier Institute of Science and Technology, and State Key Laboratory for Mechanical Behavior of Materials , Xi'an Jiaotong University , Xi'an 710049 , P.R. China
- Department of Materials Science and Engineering , National University of Singapore , 9 Engineering Drive 1 , Singapore 117575 , Singapore
| | - Dongsheng Song
- NUSNNI-NanoCore , National University of Singapore , Singapore 117411 , Singapore
| | - Mengyao Guo
- Frontier Institute of Science and Technology, and State Key Laboratory for Mechanical Behavior of Materials , Xi'an Jiaotong University , Xi'an 710049 , P.R. China
| | - Jihong Bian
- Frontier Institute of Science and Technology, and State Key Laboratory for Mechanical Behavior of Materials , Xi'an Jiaotong University , Xi'an 710049 , P.R. China
| | - Junning Li
- School of Physics and Astronomy , Queen Mary University of London , London E1 4NS , U.K
| | - Yaodong Yang
- Frontier Institute of Science and Technology, and State Key Laboratory for Mechanical Behavior of Materials , Xi'an Jiaotong University , Xi'an 710049 , P.R. China
| | - Haitao Huang
- Department of Applied Physics , The Hong Kong Polytechnic University , Kowloon , Hong Kong SAR
| | - Stephen J Pennycook
- Department of Materials Science and Engineering , National University of Singapore , 9 Engineering Drive 1 , Singapore 117575 , Singapore
| | - Xiaojie Lou
- Frontier Institute of Science and Technology, and State Key Laboratory for Mechanical Behavior of Materials , Xi'an Jiaotong University , Xi'an 710049 , P.R. China
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Zhang Y, Han MG, Garlow JA, Tan Y, Xue F, Chen LQ, Munroe P, Valanoor N, Zhu Y. Deterministic Ferroelastic Domain Switching Using Ferroelectric Bilayers. NANO LETTERS 2019; 19:5319-5326. [PMID: 31268341 DOI: 10.1021/acs.nanolett.9b01782] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Composition gradients, or dissimilar ferroelectric bilayers, demonstrate colossal electromechanical figures of merit attributed to the motion of ferroelastic domain walls. Yet, mechanistic understanding of polarization switching pathways that drive ferroelastic switching in these systems remains elusive. Here, the crucial roles of strain and electrostatic boundary conditions in ferroelectric bilayer systems are revealed, which underpin their ferroelastic switching dynamics. Using in situ electrical biasing in the transmission electron microscope (TEM), the motion of ferroelastic domain walls is investigated in a tetragonal (T) Pb(Zr,Ti)O3 (PZT)/rhombohedral (R) PZT epitaxial bilayer system. Atomic resolution electron microscopy, in tandem with phase field simulations, indicates that ferroelastic switching is triggered by predominant nucleation at the triple domain junctions located at the interface between the T/R layers. Furthermore, this interfacial nucleation leads to systematic reversable reorientation of ferroelastic domain walls. Deterministic ferroelastic domain switching, driven by the interfacial strain and electrostatic boundary conditions in the ferroelectric bilayer, provides a viable pathway toward novel design of miniaturized energy-efficient electromechanical devices.
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Affiliation(s)
- Yangyang Zhang
- Condensed Matter Physics and Materials Sciences Department , Brookhaven National Laboratory , Upton , New York 11973 , United States
- School of Materials Science and Engineering , University of New South Wales , Sydney , New South Wales 2052 , Australia
| | - Myung-Geun Han
- Condensed Matter Physics and Materials Sciences Department , Brookhaven National Laboratory , Upton , New York 11973 , United States
| | - Joseph A Garlow
- Condensed Matter Physics and Materials Sciences Department , Brookhaven National Laboratory , Upton , New York 11973 , United States
| | - Yueze Tan
- Department of Materials Science and Engineering , Pennsylvania State University , University Park , Pennsylvania 16802 , United States
| | - Fei Xue
- Department of Materials Science and Engineering , Pennsylvania State University , University Park , Pennsylvania 16802 , United States
| | - Long-Qing Chen
- Department of Materials Science and Engineering , Pennsylvania State University , University Park , Pennsylvania 16802 , United States
| | - Paul Munroe
- School of Materials Science and Engineering , University of New South Wales , Sydney , New South Wales 2052 , Australia
| | - Nagarajan Valanoor
- School of Materials Science and Engineering , University of New South Wales , Sydney , New South Wales 2052 , Australia
| | - Yimei Zhu
- Condensed Matter Physics and Materials Sciences Department , Brookhaven National Laboratory , Upton , New York 11973 , United States
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