Strain-Engineered Ferroelastic Structures in PbTiO3 Films and Their Control by Electric Fields

We study the interplay between epitaxial strain, film thickness, and electric field in the creation, modification, and design of distinct ferroelastic structures in PbTiO₃ thin films. Strain and thickness greatly affect the structures formed, providing a two-variable parameterization of the resulting self-assembly. Under applied electric fields, these strain-engineered ferroelastic structures are highly malleable, especially when a/c and a₁/a₂ superdomains coexist. To reconfigure the ferroelastic structures and achieve self-assembled nanoscale-ordered morphologies, pure ferroelectric switching of individual c-domains within the a/c superdomains is essential. The stability, however, of the electrically written ferroelastic structures is in most cases ephemeral; the speed of the relaxation process depends sensitively on strain and thickness. Only under low tensile strain-as is the case for PbTiO₃ on GdScO₃-and below a critical thickness do the electrically created a/c superdomain structures become stable for days or longer, making them relevant for reconfigurable nanoscale electronics or nonvolatile electromechanical applications.

Deterministic Ferroelastic Domain Switching Using Ferroelectric Bilayers

Composition gradients, or dissimilar ferroelectric bilayers, demonstrate colossal electromechanical figures of merit attributed to the motion of ferroelastic domain walls. Yet, mechanistic understanding of polarization switching pathways that drive ferroelastic switching in these systems remains elusive. Here, the crucial roles of strain and electrostatic boundary conditions in ferroelectric bilayer systems are revealed, which underpin their ferroelastic switching dynamics. Using in situ electrical biasing in the transmission electron microscope (TEM), the motion of ferroelastic domain walls is investigated in a tetragonal (T) Pb(Zr,Ti)O₃ (PZT)/rhombohedral (R) PZT epitaxial bilayer system. Atomic resolution electron microscopy, in tandem with phase field simulations, indicates that ferroelastic switching is triggered by predominant nucleation at the triple domain junctions located at the interface between the T/R layers. Furthermore, this interfacial nucleation leads to systematic reversable reorientation of ferroelastic domain walls. Deterministic ferroelastic domain switching, driven by the interfacial strain and electrostatic boundary conditions in the ferroelectric bilayer, provides a viable pathway toward novel design of miniaturized energy-efficient electromechanical devices.

Degenerate (identity) chemical reactions in ferroelastic crystals

The presence of degenerate chemical reactions in crystals is discussed. They take place in some order-disorder phase transitions in crystals. The other category of identity (degenerate) chemical reactions in crystals includes a few examples of domain reorientations with simultaneous hopping of atoms/ions in some ferroelastic crystals. The product of the hopping maybe either identical with the reactant though in a different orientation or a conjugated enantiomorph. In these examples, the hopping atom is either situated in a special position or disordered about it in the paraelastic phase. The article also discusses the definition of identity (degenerate) chemical reactions which do not take into cosideration the reactions in which the reactant and the product are enantiomers or enantiomorphs.

Controllable Ferroelastic Switching in Epitaxial Self-Assembled Aurivillius Nanobricks

Layered perovskites with Aurivillius phase have drawn tremendous attention recently, owing to their high ferroelectric Curie temperatures, large spontaneous polarization, and fatigue-free and environment-friendly characteristics. Bi₂WO₆ is one of the simplest members in the Aurivillius family with superior ferroelastic and photo-electrochemical behaviors. The self-assembly fabrication of its nanoarchitectures and strategic modulation of their ferroelastic switching are crucial toward highly efficient nanoscale applications. In this work, Bi₂WO₆ nanobrick arrays were epitaxially grown along the orthorhombic direction in a self-assembled way. Such a nanoscale topology supports out-of-plane and in-plane vectors of ferroelectric polarizations, enabling a perpendicular voltage manipulation of these emerging ferroelectric/elastic domains. Combining the scanning probe technique and transmission electron microscopy, we confirmed the in-plane polarization vectors of 78.6 and 101.4° within the crystallographic axes of the nanobricks with respect to the (110) plane of the substrate. Thus, this work provides new opportunities for ferroelectric/elastic engineering in Bi₂WO₆ nanostructures for a wide range of applications, such as sensing, actuating, and catalysis.

Observation of Quasi-Two-Dimensional Polar Domains and Ferroelastic Switching in a Metal, Ca3Ru2O7

Polar domains arise in insulating ferroelectrics when free carriers are unable to fully screen surface-bound charges. Recently discovered binary and ternary polar metals exhibit broken inversion symmetry coexisting with free electrons that might be expected to suppress the electrostatic driving force for domain formation. Contrary to this expectation, we report the first direct observation of polar domains in single crystals of the polar metal Ca₃Ru₂O₇. By a combination of mesoscale optical second-harmonic imaging and atomic-resolution scanning transmission electron microscopy, the polar domains are found to possess a quasi-two-dimensional slab geometry with a lateral size of ∼100 μm and thickness of ∼10 nm. Electronic structure calculations show that the coexistence of electronic and parity-lifting orders arise from anharmonic lattice interactions, which support 90° and 180° polar domains in a metal. Using in situ transmission electron microscopy, we also demonstrate a strain-tuning route to achieve ferroelastic switching of polar metal domains.

Uniaxial Strain-Controlled Ferroelastic Domain Evolution in BiFeO3

We investigate the effect of variable uniaxial tensile strain on the evolution of 71° ferroelastic domains in (001)-oriented epitaxial BiFeO₃ (BFO) thin films using piezoresponse force microscopy (PFM). For this purpose, a newly designed bending stage has been employed, which allows tensile bending as wells as in situ PFM characterization. In situ PFM imaging reveals polarization-strain correlations at the nanoscale. Specifically, ferroelastic domains with in-plane polarization along the direction of applied tensile strain expand, whereas the adjoining domains with orthogonal in-plane polarization contract. The switching is mediated by significant domain wall roughening and opposite displacement of the successive walls. Further, the domains with long-range order are more susceptible to an applied external mechanical stimulus compared to the domains, which exhibit short-range periodicity. In addition, the imprint state of film reverses direction under applied tensile strain. Finally, the strain-induced changes in the domain structure and wall motion are fully reversible and revert to their as-grown state upon release of the applied stress. The strain-induced non-180° polarization rotation constitutes a route to control connected functionalities, such as magnetism, via coupled in-plane rotation of the magnetic plane in multiferroic BFO thin films.

Voltage-controlled ferroelastic switching in Pb(Zr0.2Ti0.8)O3 thin films

We report a voltage controlled reversible creation and annihilation of a-axis oriented ∼10 nm wide ferroelastic nanodomains without a concurrent ferroelectric 180° switching of the surrounding c-domain matrix in archetypal ferroelectric Pb(Zr0.2Ti0.8)O3 thin films by using the piezo-response force microscopy technique. In previous studies, the coupled nature of ferroelectric switching and ferroelastic rotation has made it difficult to differentiate the underlying physics of ferroelastic domain wall movement. Our observation of distinct thresholds for ferroelectric and ferroelastic switching allows us investigate the ferroelastic switching cleanly and demonstrate a new degree of nanoscale control over the ferroelastic domains.