1
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Yin L, Cheng R, Ding J, Jiang J, Hou Y, Feng X, Wen Y, He J. Two-Dimensional Semiconductors and Transistors for Future Integrated Circuits. ACS NANO 2024; 18:7739-7768. [PMID: 38456396 DOI: 10.1021/acsnano.3c10900] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/09/2024]
Abstract
Silicon transistors are approaching their physical limit, calling for the emergence of a technological revolution. As the acknowledged ultimate version of transistor channels, 2D semiconductors are of interest for the development of post-Moore electronics due to their useful properties and all-in-one potentials. Here, the promise and current status of 2D semiconductors and transistors are reviewed, from materials and devices to integrated applications. First, we outline the evolution and challenges of silicon-based integrated circuits, followed by a detailed discussion on the properties and preparation strategies of 2D semiconductors and van der Waals heterostructures. Subsequently, the significant progress of 2D transistors, including device optimization, large-scale integration, and unconventional devices, are presented. We also examine 2D semiconductors for advanced heterogeneous and multifunctional integration beyond CMOS. Finally, the key technical challenges and potential strategies for 2D transistors and integrated circuits are also discussed. We envision that the field of 2D semiconductors and transistors could yield substantial progress in the upcoming years and hope this review will trigger the interest of scientists planning their next experiment.
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Affiliation(s)
- Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jiahui Ding
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yutang Hou
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Xiaoqiang Feng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
- Wuhan Institute of Quantum Technology, Wuhan 430206, People's Republic of China
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2
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Di Giorgio C, Blundo E, Basset J, Pettinari G, Felici M, Quay CHL, Rohart S, Polimeni A, Bobba F, Aprili M. Imaging the Quantum Capacitance of Strained MoS 2 Monolayers by Electrostatic Force Microscopy. ACS NANO 2024; 18:3405-3413. [PMID: 38236606 DOI: 10.1021/acsnano.3c10393] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/19/2024]
Abstract
We implemented radio frequency-assisted electrostatic force microscopy (RF-EFM) to investigate the electric field response of biaxially strained molybdenum disulfide (MoS2) monolayers (MLs) in the form of mesoscopic bubbles, produced via hydrogen (H)-ion irradiation of the bulk crystal. MoS2 ML, a semiconducting transition metal dichalcogenide, has recently attracted significant attention due to its promising optoelectronic properties, further tunable by strain. Here, we take advantage of the RF excitation to distinguish the intrinsic quantum capacitance of the strained ML from that due to atomic scale defects, presumably sulfur vacancies or H-passivated sulfur vacancies. In fact, at frequencies fRF larger than the inverse defect trapping time, the defect contribution to the total capacitance and to transport is negligible. Using RF-EFM at fRF = 300 MHz, we visualize simultaneously the bubble topography and its quantum capacitance. Our finite-frequency capacitance imaging technique is noninvasive and nanoscale and can contribute to the investigation of time- and spatial-dependent phenomena, such as the electron compressibility in quantum materials, which are difficult to measure by other methods.
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Affiliation(s)
- Cinzia Di Giorgio
- Department of Physics E.R. Caianiello, University of Salerno, Fisciano, 84084, Italy
- Laboratoire de Physique des Solides, Centre National de la Recherche Scientifique (CNRS), Université Paris-Saclay, Orsay, 91405, France
| | - Elena Blundo
- Physics Department, Sapienza University of Rome, Rome, 00185, Italy
| | - Julien Basset
- Laboratoire de Physique des Solides, Centre National de la Recherche Scientifique (CNRS), Université Paris-Saclay, Orsay, 91405, France
| | - Giorgio Pettinari
- Institute for Photonics and Nanotechnologies, National Research Council (CNR-IFN), Rome, 00133, Italy
| | - Marco Felici
- Physics Department, Sapienza University of Rome, Rome, 00185, Italy
| | - Charis H L Quay
- Laboratoire de Physique des Solides, Centre National de la Recherche Scientifique (CNRS), Université Paris-Saclay, Orsay, 91405, France
| | - Stanislas Rohart
- Laboratoire de Physique des Solides, Centre National de la Recherche Scientifique (CNRS), Université Paris-Saclay, Orsay, 91405, France
| | - Antonio Polimeni
- Physics Department, Sapienza University of Rome, Rome, 00185, Italy
| | - Fabrizio Bobba
- Department of Physics E.R. Caianiello, University of Salerno, Fisciano, 84084, Italy
- SuPerconducting and other INnovative materials and devices institute, National Research Council (CNR-SPIN), Fisciano, 84084, Italy
| | - Marco Aprili
- Laboratoire de Physique des Solides, Centre National de la Recherche Scientifique (CNRS), Université Paris-Saclay, Orsay, 91405, France
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3
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Feng X, Cheng R, Yin L, Wen Y, Jiang J, He J. Two-Dimensional Oxide Crystals for Device Applications: Challenges and Opportunities. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2304708. [PMID: 37452605 DOI: 10.1002/adma.202304708] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Revised: 07/06/2023] [Accepted: 07/12/2023] [Indexed: 07/18/2023]
Abstract
Atomically thin two-dimensional (2D) oxide crystals have garnered considerable attention because of their remarkable physical properties and potential for versatile applications. In recent years, significant advancements have been made in the design, preparation, and application of ultrathin 2D oxides, providing many opportunities for new-generation advanced technologies. This review focuses on the controllable preparation of 2D oxide crystals and their applications in electronic and optoelectronic devices. Based on their bonding nature, the various types of 2D oxide crystals are first summarized, including both layered and nonlayered crystals, as well as their current top-down and bottom-up synthetic approaches. Subsequently, in terms of the unique physical and electrical properties of 2D oxides, recent advances in device applications are emphasized, including photodetectors, field-effect transistors, dielectric layers, magnetic and ferroelectric devices, memories, and gas sensors. Finally, conclusions and future prospects of 2D oxide crystals are presented. It is hoped that this review will provide comprehensive and insightful guidance for the development of 2D oxide crystals and their device applications.
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Affiliation(s)
- Xiaoqiang Feng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Luojia Laboratory, Wuhan, 430072, China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Luojia Laboratory, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
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4
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Liu G, Xing X, Wu C, Jin J, Yan M. Interface-induced enhanced room temperature ferromagnetism in hybrid transition metal dichalcogenides. J Colloid Interface Sci 2023; 652:2076-2084. [PMID: 37696061 DOI: 10.1016/j.jcis.2023.09.031] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/23/2023] [Revised: 08/12/2023] [Accepted: 09/06/2023] [Indexed: 09/13/2023]
Abstract
Magnetic semiconductors with both electron charge and spin features exhibit tremendous potential in spintronics. Although defective transition-metal dichalcogenides are promising with induced room temperature (RT) magnetic moments, impacts of the defect type and underlying mechanisms remain unclear. Herein, two strategies involving elemental substitution and epitaxial growth have been explored to synthesize alloyed and hybrid MoSe2-xSx with lattice distortion and artificial interfaces respectively. Both experimental measurements and first-principle calculations demonstrate induced magnetism in the resultant MoSe2-xSx with the magnetization intensity closely associated to the atomic structure. The alloyed MoSe2-xSx exhibits satisfactory structural stability and atomic magnetic moments due to the Mo 4d orbital splitting induced by lattice distortion. Nevertheless, both enhanced RT ferromagnetism and thermomagnetic stability can be achieved for the hybrid MoSe2-xSx resulted from stronger localized spin polarization at the MoSe2/MoS2 interfaces. As such the work not only sheds light on the mechanisms underlying defect-induced ferromagnetism in transition-metal dichalcogenides, but also proposes an interface engineering strategy to induce significant ferromagnetism for multi-fields including spintronics, multiferroics and valleytronics.
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Affiliation(s)
- Guang Liu
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
| | - Xuejun Xing
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
| | - Chen Wu
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China; Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030032, China.
| | - Jiaying Jin
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
| | - Mi Yan
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China.
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5
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Yin L, Cheng R, Pan S, Xiong W, Chang S, Zhai B, Wen Y, Cai Y, Guo Y, Sendeku MG, Jiang J, Liao W, Wang Z, He J. Engineering Atomic-Scale Patterning and Resistive Switching in 2D Crystals and Application in Image Processing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2306850. [PMID: 37688530 DOI: 10.1002/adma.202306850] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/12/2023] [Revised: 09/05/2023] [Indexed: 09/11/2023]
Abstract
The ultrathin thickness of 2D layered materials affords the control of their properties through defects, surface modification, and electrostatic fields more efficiently compared with bulk architecture. In particular, patterning design, such as moiré superlattice patterns and spatially periodic dielectric structures, are demonstrated to possess the ability to precisely control the local atomic and electronic environment at large scale, thus providing extra degrees of freedom to realize tailored material properties and device functionality. Here, the scalable atomic-scale patterning in superionic cuprous telluride by using the bonding difference at nonequivalent copper sites is reported. Moreover, benefitting from the natural coupling of ordered and disordered sublattices, controllable piezoelectricity-like multilevel switching and bipolar switching with the designed crystal structure and electrical contact is realized, and their application in image enhancement is demonstrated. This work extends the known classes of patternable crystals and atomic switching devices, and ushers in a frontier for image processing with memristors.
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Affiliation(s)
- Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Luojia Laboratory, Wuhan, 430072, China
| | - Shurong Pan
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Wenqi Xiong
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Sheng Chang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Baoxing Zhai
- Institute of Semiconductors, Henan Academy of Sciences, Zhengzhou, 450046, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yuchen Cai
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Yuzheng Guo
- School of Electrical Engineering and Automation, Wuhan University, Wuhan, 430072, China
| | | | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Weitu Liao
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Zhenxing Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Luojia Laboratory, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
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6
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Wang H, Wen Y, Zeng H, Xiong Z, Tu Y, Zhu H, Cheng R, Yin L, Jiang J, Zhai B, Liu C, Shan C, He J. 2D Ferroic Materials for Nonvolatile Memory Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305044. [PMID: 37486859 DOI: 10.1002/adma.202305044] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2023] [Revised: 07/21/2023] [Indexed: 07/26/2023]
Abstract
The emerging nonvolatile memory technologies based on ferroic materials are promising for producing high-speed, low-power, and high-density memory in the field of integrated circuits. Long-range ferroic orders observed in 2D materials have triggered extensive research interest in 2D magnets, 2D ferroelectrics, 2D multiferroics, and their device applications. Devices based on 2D ferroic materials and heterostructures with an atomically smooth interface and ultrathin thickness have exhibited impressive properties and significant potential for developing advanced nonvolatile memory. In this context, a systematic review of emergent 2D ferroic materials is conducted here, emphasizing their recent research on nonvolatile memory applications, with a view to proposing brighter prospects for 2D magnetic materials, 2D ferroelectric materials, 2D multiferroic materials, and their relevant devices.
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Affiliation(s)
- Hao Wang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hui Zeng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ziren Xiong
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yangyuan Tu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hao Zhu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Baoxing Zhai
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chuansheng Liu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Luojia Laboratory, Wuhan, 430079, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, China
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7
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Dewan S, Khanikar PD, Mudgal R, Singh A, Muduli PK, Singh R, Das S. Large-Area GeSe Realized Using Pulsed Laser Deposition for Ultralow-Noise and Ultrafast Broadband Phototransistors. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37216628 DOI: 10.1021/acsami.3c02522] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Here, we report on the comprehensive growth, characterization, and optoelectronic application of large-area, two-dimensional germanium selenide (GeSe) layers prepared using the pulsed laser deposition (PLD) technique. Back-gated phototransistors based on few-layered 2D GeSe have been fabricated on a SiO2/Si substrate for ultrafast, low noise, and broadband light detection, showing spectral functionalities over a broad wavelength range of 0.4-1.5 μm. The broadband detection capabilities of the device have been attributed to the self-assembled GeOx/GeSe heterostructure and sub-bandgap absorption in GeSe. Besides a high photoresponsivity of 25 AW-1, the GeSe phototransistor displayed a high external quantum efficiency of the order of 6.14 × 103%, a maximum specific detectivity of 4.16 × 1010 Jones, and an ultralow noise equivalent power of 0.09 pW/Hz1/2. The detector has an ultrafast response/recovery time of 3.2/14.9 μs and can show photoresponse up to a high cut-off frequency of 150 kHz. These promising device parameters exhibited by PLD-grown GeSe layers-based detectors make it a favorable choice against present-day mainstream van der Waals semiconductors with limited scalability and optoelectronic compatibility in the visible-to-infrared spectral range.
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Affiliation(s)
- Sheetal Dewan
- School of Interdisciplinary Research, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Prabal Dweep Khanikar
- University of Queensland-IIT Delhi Academy of Research (UQIDAR), Hauz Khas, New Delhi 110016, India
- Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Richa Mudgal
- Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Avneet Singh
- Department of Physics, Shivaji College, University of Delhi, New Delhi 110027, India
| | - Pranaba Kishor Muduli
- Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Rajendra Singh
- Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India
- Department of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi 110016, India
| | - Samaresh Das
- Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
- Department of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi 110016, India
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8
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Chen PH, Chen CA, Lin YT, Hsieh PY, Chuang MH, Liu X, Hsieh TY, Shen CH, Shieh JM, Wu MC, Chen YF, Yang CC, Lee YH. Passivated Interfacial Traps of Monolayer MoS 2 with Bipolar Electrical Pulse. ACS APPLIED MATERIALS & INTERFACES 2023; 15:10812-10819. [PMID: 36802479 DOI: 10.1021/acsami.2c19705] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Heterogeneous integration of monolayers is an emergent route of spatially combining materials with available platforms for unprecedented properties. A long-standing challenge along this route is to manipulate interfacial configurations of each unit in stacking architecture. A monolayer of transition metal dichalcogenides (TMDs) offers an embodiment of studying interface engineering of integrated systems because optoelectronic performances generally trade off with each other due to interfacial trap states. While ultrahigh photoresponsivity of TMDs phototransistors has been realized, a long response time commonly appears and hinders applications. Here, fundamental processes in excitation and relaxation of the photoresponse are studied and correlated with interfacial traps of the monolayer MoS2. A mechanism for the onset of saturation photocurrent and the reset behavior in the monolayer photodetector is illustrated based on device performances. Electrostatic passivation of interfacial traps is achieved with the bipolar gate pulse and significantly reduces the response time for photocurrent to reach saturated states. This work paves the way toward fast-speed and ultrahigh-gain devices of stacked two-dimensional monolayers.
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Affiliation(s)
- Po-Han Chen
- Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Chun-An Chen
- Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yu-Ting Lin
- Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Central University, Zhongli 32001, Taiwan
| | - Ping-Yi Hsieh
- Taiwan Semiconductor Research Institute, Hsinchu 30078, Taiwan
| | - Meng-Hsi Chuang
- Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Xiaoze Liu
- School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, China
| | - Tung-Ying Hsieh
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Chang-Hong Shen
- Taiwan Semiconductor Research Institute, Hsinchu 30078, Taiwan
| | - Jia-Min Shieh
- Taiwan Semiconductor Research Institute, Hsinchu 30078, Taiwan
| | - Meng-Chyi Wu
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yung-Fu Chen
- Department of Physics, National Central University, Zhongli 32001, Taiwan
| | - Chih-Chao Yang
- Taiwan Semiconductor Research Institute, Hsinchu 30078, Taiwan
| | - Yi-Hsien Lee
- Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
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9
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Lee M, Seung H, Kwon JI, Choi MK, Kim DH, Choi C. Nanomaterial-Based Synaptic Optoelectronic Devices for In-Sensor Preprocessing of Image Data. ACS OMEGA 2023; 8:5209-5224. [PMID: 36816688 PMCID: PMC9933102 DOI: 10.1021/acsomega.3c00440] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/21/2023] [Accepted: 01/27/2023] [Indexed: 06/18/2023]
Abstract
With the advance in information technologies involving machine vision applications, the demand for energy- and time-efficient acquisition, transfer, and processing of a large amount of image data has rapidly increased. However, current architectures of the machine vision system have inherent limitations in terms of power consumption and data latency owing to the physical isolation of image sensors and processors. Meanwhile, synaptic optoelectronic devices that exhibit photoresponse similar to the behaviors of the human synapse enable in-sensor preprocessing, which makes the front-end part of the image recognition process more efficient. Herein, we review recent progress in the development of synaptic optoelectronic devices using functional nanomaterials and their unique interfacial characteristics. First, we provide an overview of representative functional nanomaterials and device configurations for the synaptic optoelectronic devices. Then, we discuss the underlying physics of each nanomaterial in the synaptic optoelectronic device and explain related device characteristics that allow for the in-sensor preprocessing. We also discuss advantages achieved by the application of the synaptic optoelectronic devices to image preprocessing, such as contrast enhancement and image filtering. Finally, we conclude this review and present a short prospect.
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Affiliation(s)
- Minkyung Lee
- Center
for Optoelectronic Materials and Devices, Post-silicon Semiconductor
Institute, Korea Institute of Science and
Technology (KIST), Seoul 02792, Republic of Korea
| | - Hyojin Seung
- Center
for Nanoparticle Research, Institute for
Basic Science (IBS), Seoul 08826, Republic of Korea
- School
of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic
of Korea
| | - Jong Ik Kwon
- School
of Materials Science and Engineering, Ulsan
National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Moon Kee Choi
- Center
for Nanoparticle Research, Institute for
Basic Science (IBS), Seoul 08826, Republic of Korea
- School
of Materials Science and Engineering, Ulsan
National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Dae-Hyeong Kim
- Center
for Nanoparticle Research, Institute for
Basic Science (IBS), Seoul 08826, Republic of Korea
- School
of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic
of Korea
- Department
of Materials Science and Engineering, Seoul
National University, Seoul 08826, Republic of Korea
| | - Changsoon Choi
- Center
for Optoelectronic Materials and Devices, Post-silicon Semiconductor
Institute, Korea Institute of Science and
Technology (KIST), Seoul 02792, Republic of Korea
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10
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Lai H, Lu Z, Lu Y, Yao X, Xu X, Chen J, Zhou Y, Liu P, Shi T, Wang X, Xie W. Fast, Multi-Bit, and Vis-Infrared Broadband Nonvolatile Optoelectronic Memory with MoS 2 /2D-Perovskite Van der Waals Heterojunction. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208664. [PMID: 36453570 DOI: 10.1002/adma.202208664] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2022] [Revised: 11/23/2022] [Indexed: 06/17/2023]
Abstract
Nonvolatile optoelectronic memory (NVOM) integrating the functions of optical sensing and long-term memory can efficiently process and store a large amount of visual scene information, which has become the core requirement of multiple intelligence scenarios. However, realizing NVOM with vis-infrared broadband response is still challenging. Herein, the room temperature vis-infrared broadband NVOM based on few-layer MoS2 /2D Ruddlesden-Popper perovskite (2D-RPP) van der Waals heterojunction is realized. It is found that the 2D-RPP converts the initial n-type MoS2 into p-type and facilitates hole transfer between them. Furthermore, the 2D-RPP rich in interband states serves as an effective electron trapping layer as well as broadband photoresponsive layer. As a result, the dielectric-free MoS2 /2D-RPP heterojunction enables the charge to transfer quickly under external field, which enables a large memory window (104 V), fast write speed of 20 µs, and optical programmable characteristics from visible light (405 nm) to telecommunication wavelengths (i.e., 1550 nm) at room temperature. Trapezoidal optical programming can produce up to 100 recognizable states (>6 bits), with operating energy as low as 5.1 pJ per optical program. These results provide a route to realize fast, low power, multi-bit optoelectronic memory from visible to the infrared wavelength.
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Affiliation(s)
- Haojie Lai
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong, 510632, P. R. China
| | - Zhengli Lu
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong, 510632, P. R. China
| | - Yueheng Lu
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong, 510632, P. R. China
| | - Xuanchun Yao
- Instrumental Analysis and Research Center, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Xin Xu
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong, 510632, P. R. China
| | - Jian Chen
- Instrumental Analysis and Research Center, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Yang Zhou
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong, 510632, P. R. China
| | - Pengyi Liu
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong, 510632, P. R. China
| | - Tingting Shi
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong, 510632, P. R. China
| | - Xiaomu Wang
- School of Electronic Science and Technology, Nanjing University, Nanjing, Jiangsu, 210093, P. R. China
| | - Weiguang Xie
- Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong, 510632, P. R. China
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Jinan University, Guangzhou, Guangdong, 510632, P. R. China
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11
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Sangolkar AA, Pooja, Pawar R. Structure, stability, and electronic and optical properties of TMDC-coinage metal composites: vertical atomically thin self-assembly of Au clusters. Phys Chem Chem Phys 2023; 25:4177-4192. [PMID: 36655755 DOI: 10.1039/d2cp04000j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
Composites of metal clusters supported on transition metal dichalcogenides (TMDCs) often provide promising opportunities for applications in nanoelectronics, catalysis, sensing, etc. In the present investigation, a systematic attempt has been made to unveil the structure and stability of coinage M6 clusters supported on TMDC (MoS2 and WS2) monolayers. The more prominent objective is to explore potential candidates that stabilize the two-dimensional (2D) M6 clusters on their surface. Periodic energy decomposition analysis (pEDA) was carried out to probe the various interaction energy (IE) components that govern the stability of the M6 clusters in the composites. Attention has also been devoted to unravelling the electronic and optical properties of these TMDCs/M6 composites. Moreover, ab initio molecular dynamics (AIMD) simulations were performed to scrutinize the dynamic behaviour of Au cluster on WS2 monolayer. The results reveal that the coinage M6 clusters form energetically more stable composites on MoS2 than WS2 monolayer. It is worth mentioning that WS2 promotes the stability of 2D M6 clusters. Inclusion of dispersion correction marginally altered the geometries of the TMDCs/M6 composites but its impact on the IE values was significant. AIMD simulation explicitly emphasizes that the WS2 surface preferentially facilitates the vertical 2D self-assembling of Au atoms and, interestingly, the planarity is mostly retained during the course of simulations. The adsorption of coinage M6 clusters substantially influences the electronic and optical properties of the TMDCs. HSE06 calculation confirms that the decrease in energy gap is more pronounced in MoS2/M6 composites. The outcomes of this study render fundamental insights into the various TMDCs/M6 composites that would certainly be worthwhile probing for diverse practical applications.
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Affiliation(s)
- Akanksha Ashok Sangolkar
- Laboratory of Advanced Computation and Theory for Materials and Chemistry, Department of Chemistry, National Institute of Technology Warangal (NITW), Warangal, Telangana-506004, India.
| | - Pooja
- Laboratory of Advanced Computation and Theory for Materials and Chemistry, Department of Chemistry, National Institute of Technology Warangal (NITW), Warangal, Telangana-506004, India.
| | - Ravinder Pawar
- Laboratory of Advanced Computation and Theory for Materials and Chemistry, Department of Chemistry, National Institute of Technology Warangal (NITW), Warangal, Telangana-506004, India.
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12
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Cheng R, Yin L, Wen Y, Zhai B, Guo Y, Zhang Z, Liao W, Xiong W, Wang H, Yuan S, Jiang J, Liu C, He J. Ultrathin ferrite nanosheets for room-temperature two-dimensional magnetic semiconductors. Nat Commun 2022; 13:5241. [PMID: 36068242 PMCID: PMC9448765 DOI: 10.1038/s41467-022-33017-1] [Citation(s) in RCA: 28] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2022] [Accepted: 08/26/2022] [Indexed: 11/23/2022] Open
Abstract
The discovery of magnetism in ultrathin crystals opens up opportunities to explore new physics and to develop next-generation spintronic devices. Nevertheless, two-dimensional magnetic semiconductors with Curie temperatures higher than room temperature have rarely been reported. Ferrites with strongly correlated d-orbital electrons may be alternative candidates offering two-dimensional high-temperature magnetic ordering. This prospect is, however, hindered by their inherent three-dimensional bonded nature. Here, we develop a confined-van der Waals epitaxial approach to synthesizing air-stable semiconducting cobalt ferrite nanosheets with thickness down to one unit cell using a facile chemical vapor deposition process. The hard magnetic behavior and magnetic domain evolution are demonstrated by means of vibrating sample magnetometry, magnetic force microscopy and magneto-optical Kerr effect measurements, which shows high Curie temperature above 390 K and strong dimensionality effect. The addition of room-temperature magnetic semiconductors to two-dimensional material family provides possibilities for numerous novel applications in computing, sensing and information storage. Van der Waals crystals allow for magnetism down to the monolayer limit, however, this magnetism, and frequently the material itself, is fragile. Ferrites, conversely, have robust material stability and magnetic order, but are three dimensional. Here the authors succeed in creating a single unit cell thickness of Cobalt Ferrite via chemical vapour deposition, with hard magnetic properties, and curie temperature exceeding room temperature.
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Affiliation(s)
- Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Baoxing Zhai
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yuzheng Guo
- School of Electrical Engineering and Automation, Wuhan University, Wuhan, 430072, China
| | - Zhaofu Zhang
- The Institute of Technological Sciences, Wuhan University, Wuhan, 430072, China
| | - Weitu Liao
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Wenqi Xiong
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hao Wang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Shengjun Yuan
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chuansheng Liu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China. .,Wuhan Institute of Quantum Technology, Wuhan, 430206, China.
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13
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Jiang J, Cheng R, Yin L, Wen Y, Wang H, Zhai B, Liu C, Shan C, He J. Van der waals epitaxial growth of two-dimensional PbSe and its high-performance heterostructure devices. Sci Bull (Beijing) 2022; 67:1659-1668. [DOI: 10.1016/j.scib.2022.07.005] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/15/2022] [Revised: 06/02/2022] [Accepted: 06/24/2022] [Indexed: 10/17/2022]
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14
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Qin L, Li Q, Wu S, Wang J, Wang Z, Wang L, Wang Q. All-Optical Reconfigurable Electronic Memory in a Graphene/SrTiO 3 Heterostructure. ACS OMEGA 2022; 7:15841-15845. [PMID: 35571849 PMCID: PMC9096928 DOI: 10.1021/acsomega.2c00938] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2022] [Accepted: 04/14/2022] [Indexed: 05/26/2023]
Abstract
Direct optical data coding in an electronic device is meaningful for photonic technology. Herein, we report electronic memory in a graphene/SrTiO3 heterostructure, which presents the all-optical logic operation (encoding and decoding). The underlying physics have been elucidated in which the synergistic effect of surface localization with interface band bending is responsible for optical encoding and decoding in the electronic memory device of the graphene/SrTiO3 heterostructure. Further, we demonstrate a robust retention and synaptic-like processing of optical signals, which may lead to significant applications in neuromorphic imaging sensors.
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Affiliation(s)
- Liyun Qin
- Department
of Physics, Nanchang University, Nanchang 330031, China
| | - Qinliang Li
- Jiangxi
Key Laboratory of Nanomaterials and Sensors, School of Physics, Communication
and Electronics, Jiangxi Normal University, Nanchang 330022, China
| | - Shiteng Wu
- Department
of Physics, Nanchang University, Nanchang 330031, China
| | - Jianyu Wang
- Department
of Physics, Nanchang University, Nanchang 330031, China
| | - Zhendong Wang
- Department
of Physics, Nanchang University, Nanchang 330031, China
| | - Li Wang
- Department
of Physics, Nanchang University, Nanchang 330031, China
| | - Qisheng Wang
- Department
of Physics, Nanchang University, Nanchang 330031, China
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15
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Li S, Zhang Z, Chen X, Deng W, Lu Y, Sui M, Gong F, Xu G, Li X, Liu F, You C, Chu F, Wu Y, Yan H, Zhang Y. A High-Performance In-Memory Photodetector Realized by Charge Storage in a van der Waals MISFET. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2107734. [PMID: 35014726 DOI: 10.1002/adma.202107734] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2021] [Revised: 12/05/2021] [Indexed: 06/14/2023]
Abstract
The emerging data-intensive applications in optoelectronics are driving innovation toward the fused integration of sensing, memory, and computing to break through the restrictions of the von Neumann architecture. However, the present photodetectors with only optoelectronic conversion functions cannot satisfy the growing demands of the multifunctions required in single devices. Here, a novel route for the integration of non-volatile memory into a photodetector is proposed, with a WSe2 /h-BN van der Waals heterostructure on a Si/SiO2 substrate to realize in-memory photodetection. This photodetector exhibits an ultrahigh readout photocurrent of 3.4 µA and photoresponsivity of 337.8 A W-1 in the solar-blind wavelength region, together with an extended retention time of more than 10 years. Furthermore, the charge-storage-based non-volatile mechanism of h-BN/SiO2 is successfully proven through a novel analysis of in situ optoelectronic electron energy-loss spectroscopy. These results represent a leap forward to future applications and insightful mechanisms of in-memory photodetection.
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Affiliation(s)
- Songyu Li
- Key Laboratory of Optoelectronics Technology, College of Microelectronics, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
- School of Physics, Beihang University, Beijing, 100191, China
| | - Zeyu Zhang
- Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
| | - Xiaoqing Chen
- Key Laboratory of Optoelectronics Technology, College of Microelectronics, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
| | - Wenjie Deng
- Key Laboratory of Optoelectronics Technology, College of Microelectronics, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
| | - Yue Lu
- Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
| | - Manling Sui
- Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
| | - Fan Gong
- Key Laboratory of Optoelectronics Technology, College of Microelectronics, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
| | - Guoliang Xu
- Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
| | - Xuhong Li
- Key Laboratory of Optoelectronics Technology, College of Microelectronics, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
- School of Physics, Beihang University, Beijing, 100191, China
| | - Famin Liu
- School of Physics, Beihang University, Beijing, 100191, China
| | - Congya You
- Key Laboratory of Optoelectronics Technology, College of Microelectronics, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
| | - Feihong Chu
- Key Laboratory of Optoelectronics Technology, College of Microelectronics, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
| | - Yi Wu
- Key Laboratory of Optoelectronics Technology, College of Microelectronics, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
| | - Hui Yan
- Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
| | - Yongzhe Zhang
- Key Laboratory of Optoelectronics Technology, College of Microelectronics, Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China
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16
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Chen J, Guo R, Wang X, Zhu C, Cao G, You L, Duan R, Zhu C, Hadke SS, Cao X, Salim T, Buenconsejo PJS, Xu M, Zhao X, Zhou J, Deng Y, Zeng Q, Wong LH, Chen J, Liu F, Liu Z. Solid-Ionic Memory in a van der Waals Heterostructure. ACS NANO 2022; 16:221-231. [PMID: 35001610 DOI: 10.1021/acsnano.1c05841] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Defect states dominate the performance of low-dimensional nanoelectronics, which deteriorate the serviceability of devices in most cases. But in recent years, some intriguing functionalities are discovered by defect engineering. In this work, we demonstrate a bifunctional memory device of a MoS2/BiFeO3/SrTiO3 van der Waals heterostructure, which can be programmed and erased by solely one kind of external stimuli (light or electrical-gate pulse) via engineering of oxygen-vacancy-based solid-ionic gating. The device shows multibit electrical memory capability (>22 bits) with a large linearly tunable dynamic range of 7.1 × 106 (137 dB). Furthermore, the device can be programmed by green- and red-light illuminations and then erased by UV light pulses. Besides, the photoresponse under red-light illumination reaches a high photoresponsivity (6.7 × 104 A/W) and photodetectivity (2.12 × 1013 Jones). These results highlighted solid-ionic memory for building up multifunctional electronic and optoelectronic devices.
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Affiliation(s)
| | - Rui Guo
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | | | | | - Guiming Cao
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Lu You
- Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou 215006, P. R. China
| | | | | | | | | | | | | | | | | | | | | | | | | | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Zheng Liu
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore 637553, Singapore
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17
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Yin L, Cheng R, Wen Y, Liu C, He J. Emerging 2D Memory Devices for In-Memory Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2007081. [PMID: 34105195 DOI: 10.1002/adma.202007081] [Citation(s) in RCA: 42] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2020] [Revised: 12/27/2020] [Indexed: 06/12/2023]
Abstract
It is predicted that the conventional von Neumann computing architecture cannot meet the demands of future data-intensive computing applications due to the bottleneck between the processing and memory units. To try to solve this problem, in-memory computing technology, where calculations are carried out in situ within each nonvolatile memory unit, has been intensively studied. Among various candidate materials, 2D layered materials have recently demonstrated many new features that have been uniquely exploited to build next-generation electronics. Here, the recent progress of 2D memory devices is reviewed for in-memory computing. For each memory configuration, their operation mechanisms and memory characteristics are described, and their pros and cons are weighed. Subsequently, their versatile applications for in-memory computing technology, including logic operations, electronic synapses, and random number generation are presented. Finally, the current challenges and potential strategies for future 2D in-memory computing systems are also discussed at the material, device, circuit, and architecture levels. It is hoped that this manuscript could give a comprehensive review of 2D memory devices and their applications in in-memory computing, and be helpful for this exciting research area.
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Affiliation(s)
- Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Chuansheng Liu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
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18
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He T, Wang Z, Cao R, Li Q, Peng M, Xie R, Huang Y, Wang Y, Ye J, Wu P, Zhong F, Xu T, Wang H, Cui Z, Zhang Q, Gu L, Deng HX, Zhu H, Shan C, Wei Z, Hu W. Extrinsic Photoconduction Induced Short-Wavelength Infrared Photodetectors Based on Ge-Based Chalcogenides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2006765. [PMID: 33345467 DOI: 10.1002/smll.202006765] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/29/2020] [Revised: 12/03/2020] [Indexed: 06/12/2023]
Abstract
2D layered photodetectors have been widely researched for intriguing optoelectronic properties but their application fields are limited by the bandgap. Extending the detection waveband can significantly enrich functionalities and applications of photodetectors. For example, after breaking through bandgap limitation, extrinsic Si photodetectors are used for short-wavelength infrared or even long-wavelength infrared detection. Utilizing extrinsic photoconduction to extend the detection waveband of 2D layered photodetectors is attractive and desirable. However, extrinsic photoconduction has yet not been observed in 2D layered materials. Here, extrinsic photoconduction-induced short-wavelength infrared photodetectors based on Ge-based chalcogenides are reported for the first time and the effectiveness of intrinsic point defects are demonstrated. The detection waveband of room-temperature extrinsic GeSe photodetectors with the assistance of Ge vacancies is broadened to 1.6 µm. Extrinsic GeSe photodetectors have an excellent external quantum efficiency (0.5%) at the communication band of 1.31 µm and polarization-resolved capability to subwaveband radiation. Moreover, room-temperature extrinsic GeS photodetectors with a detection waveband to the communication band of 1.55 µm further verify the versatility of intrinsic point defects. This approach provides design strategies to enrich the functionalities of 2D layered photodetectors.
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Affiliation(s)
- Ting He
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ruyue Cao
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Qing Li
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Meng Peng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yan Huang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
| | - Yang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Jiafu Ye
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Peisong Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fang Zhong
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
| | - Tengfei Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhuangzhuang Cui
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Hui-Xiong Deng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - He Zhu
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, Zhengzhou, 450001, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
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19
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Chemical trends of deep levels in van der Waals semiconductors. Nat Commun 2020; 11:5373. [PMID: 33097722 PMCID: PMC7584584 DOI: 10.1038/s41467-020-19247-1] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/28/2020] [Accepted: 10/02/2020] [Indexed: 11/20/2022] Open
Abstract
Properties of semiconductors are largely defined by crystal imperfections including native defects. Van der Waals (vdW) semiconductors, a newly emerged class of materials, are no exception: defects exist even in the purest materials and strongly affect their electrical, optical, magnetic, catalytic and sensing properties. However, unlike conventional semiconductors where energy levels of defects are well documented, they are experimentally unknown in even the best studied vdW semiconductors, impeding the understanding and utilization of these materials. Here, we directly evaluate deep levels and their chemical trends in the bandgap of MoS2, WS2 and their alloys by transient spectroscopic study. One of the deep levels is found to follow the conduction band minimum of each host, attributed to the native sulfur vacancy. A switchable, DX center - like deep level has also been identified, whose energy lines up instead on a fixed level across different hosts, explaining a persistent photoconductivity above 400 K. The optical and electronic properties of semiconducting transition metal dichalcogenides are strongly dependent on native defects within their crystal lattice. Here, the authors use transient spectroscopy to identify defect-related deep levels in the bandgap of MoS2, WS2 and their alloys.
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