1
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Cao Q, Feng J, Chang KT, Liang W, Lu H. Emerging Opportunities of Colloidal Quantum Dots for Photocatalytic Organic Transformations. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2409096. [PMID: 39340294 DOI: 10.1002/adma.202409096] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2024] [Revised: 09/12/2024] [Indexed: 09/30/2024]
Abstract
Colloidal quantum dots (QDs) have emerged as a versatile photocatalyst for a wide range of photocatalytic transformations owing to its high absorption coefficient, large surface-to-volume ratio, high stability, and efficient charge and energy transfer dynamics. The past decades have witnessed a rapid development of QDs for artificial photocatalysis. In this review, the unique characteristics of QDs are focused on, including quantum size effect, compositional and structural diversity, tunable surface chemistry, and photophysics, that can be utilized for photocatalytic transformations. The recent advancements in photocatalytic organic transformations enabled by QDs photocatalysts are summarized. The unique opportunities of QDs are highlighted to tackle organic reactions that are previously unattainable with small molecule photocatalysts. Lastly, an outlook is provided for future directions in this field.
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Affiliation(s)
- Qinxuan Cao
- Department of Chemistry, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Jianning Feng
- Department of Chemistry, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Kin Ting Chang
- Department of Chemistry, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Wenfei Liang
- Department of Chemistry, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Haipeng Lu
- Department of Chemistry, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
- Energy Institute, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
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2
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He S, Ni A, Gebre ST, Hang R, McBride JR, Kaledin AL, Yang W, Lian T. Doping of Colloidal Nanocrystals for Optimizing Interfacial Charge Transfer: A Double-Edged Sword. J Am Chem Soc 2024; 146:24925-24934. [PMID: 39189788 PMCID: PMC11403596 DOI: 10.1021/jacs.4c06110] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/28/2024]
Abstract
Doping of colloidal nanocrystals offers versatile ways to improve their optoelectronic properties, with potential applications in photocatalysis and photovoltaics. However, the precise role of dopants on the interfacial charge transfer properties of nanocrystals remains poorly understood. Here, we use a Cu-doped InP@ZnSe quantum dot as a model system to investigate the dopant effects on both the intrinsic photophysics and their interfacial charge transfer by combining time-resolved transient absorption and photoluminescent spectroscopic methods. Our results revealed that the Cu dopant can cause the generation of the self-trapped exciton, which prolongs the exciton lifetime from 48.3 ± 1.7 to 369.0 ± 4.3 ns, facilitating efficient charge separation to slow electron and hole acceptors. However, hole localization into the Cu site alters their energetic levels, slowing hole transfer and accelerating charge recombination loss. This double-edged sword role of dopants in charge transfer properties is important in the future design of nanocrystals for their optoelectronic and photocatalytic applications.
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Affiliation(s)
- Sheng He
- Department of Chemistry, Emory University, 1515 Dickey Drive Northeast, Atlanta, Georgia 30322, United States
| | - Anji Ni
- Department of Chemistry, Emory University, 1515 Dickey Drive Northeast, Atlanta, Georgia 30322, United States
| | - Sara T Gebre
- Department of Chemistry, Emory University, 1515 Dickey Drive Northeast, Atlanta, Georgia 30322, United States
| | - Rui Hang
- Department of Chemistry, Emory University, 1515 Dickey Drive Northeast, Atlanta, Georgia 30322, United States
| | - James R McBride
- Department of Chemistry, The Vanderbilt Institute of Nanoscale Science and Engineering, Vanderbilt University, Nashville, Tennessee 37235, United States
| | - Alexey L Kaledin
- Department of Chemistry, Emory University, 1515 Dickey Drive Northeast, Atlanta, Georgia 30322, United States
- The Cherry L. Emerson Center for Scientific Computation, Emory University, 1515 Dickey Drive Northeast, Atlanta, Georgia 30322, United States
| | - Wenxing Yang
- Department of Chemistry, Emory University, 1515 Dickey Drive Northeast, Atlanta, Georgia 30322, United States
| | - Tianquan Lian
- Department of Chemistry, Emory University, 1515 Dickey Drive Northeast, Atlanta, Georgia 30322, United States
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3
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Tian C, Sun A, Zhuang R, Zheng Y, Wu X, Ouyang B, Du J, Li Z, Wu X, Chen J, Cai J, Hua Y, Chen CC. Minimizing Interfacial Energy Loss and Volatilization of Formamidinium via Polymer-Assisted D-A supramolecular Self-Assembly Interface for Inverted Perovskite Solar Cells with 25.78% Efficiency. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2404797. [PMID: 39030758 DOI: 10.1002/adma.202404797] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2024] [Revised: 06/25/2024] [Indexed: 07/22/2024]
Abstract
2D perovskite passivation strategies effectively reduce defect-assisted carrier nonradiative recombination losses on the perovskite surface. Nonetheless, severe energy losses are causing by carrier thermalization, interfacial nonradiative recombination, and conduction band offset still persist at heterojunction perovskite/PCBM interfaces, which limits further performance enhancement of inverted heterojunction PSCs. Here, 5,10,15,20-tetrakis(pentafluorophenyl)porphyrin (5FTPP) is introduced between 3D/2D perovskite heterojunction and PCBM. Compared to tetraphenylporphyrin without electron-withdrawing fluoro-substituents, 5FTPP can self-assemble with PCBM at interface into donor-acceptor (D-A) complex with stronger supramolecular interaction and lower energy transfer losses. This rapid energy transfer from donor (5FTPP) to acceptor (PCBM) within femtosecond scale is demonstrated to enlarge hot carrier extraction rates and ranges, reducing thermalization losses. Furthermore, the incorporation of polystyrene derivative (PD) reinforces D-A interaction by inhibiting self-π-π stacking of 5FTPP, while fine-tuning conduction band offset and suppressing interfacial nonradiative recombination via Schottky barrier, dipole, and n-doping. Notably, the multidentate anchoring of PD-5FTPP with FA+, Pb2+, and I- mitigates the adverse effects of FA+ volatilization during thermal stress. Ultimately, devices with PD-5FTPP achieve a power conversion efficiency of 25.78% (certified: 25.36%), maintaining over 90% of initial efficiency after 1000 h of continuous illumination at the maximum power point (65 °C) under ISOS-L-2 protocol.
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Affiliation(s)
- Congcong Tian
- School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Anxin Sun
- School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Rongshan Zhuang
- School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Yiting Zheng
- School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Xueyun Wu
- School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Beilin Ouyang
- School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Jiajun Du
- School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Ziyi Li
- School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Xiling Wu
- School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Jinling Chen
- School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Jingyu Cai
- School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
| | - Yong Hua
- Yunnan Key Laboratory for Micro/Nano Materials & Technology, School of Materials and Energy, Yunnan University, Kunming, 650091, P. R. China
| | - Chun-Chao Chen
- School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China
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4
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Wang L, Zhu J, Wang J, Wu K. Hot Electron Cooling in n-Doped Colloidal Nanoplatelets Following Near-Infrared Intersubband Excitation. NANO LETTERS 2024; 24:10691-10698. [PMID: 39158185 DOI: 10.1021/acs.nanolett.4c03290] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/20/2024]
Abstract
Intersubband transition was recently discovered in colloidal nanoplatelets, but the associated intersubband carrier relaxation dynamics remains poorly understood. In particular, it is crucial to selectively excite the intersubband transition and to follow the hot electron dynamics in the absence of valence-band holes. This is achieved herein by exciting the predoped electrons in CdSe/ZnS nanoplatelets using near-infrared femtosecond pulses and monitoring nonequilibrium electron dynamics using broad-band visible pulses. We find that the n = 2 electrons relax to the n = 1 subband and establish a Fermi-Dirac distribution within 200 fs, and finally reach an equilibrium with the lattice within a few ps. The cooling dynamics depend mainly on the excitation fluence but weakly on the doping density and the lattice temperature. These characteristics are well captured by our numerical simulation that explicitly accounts for the state occupation effect and optical phonon scattering.
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Affiliation(s)
- Lifeng Wang
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning 116023, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jingyi Zhu
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning 116023, People's Republic of China
| | - Junhui Wang
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning 116023, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Kaifeng Wu
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning 116023, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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5
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Jin L, Selopal GS, Tong X, Perepichka DF, Wang ZM, Rosei F. Heavy-Metal-Free Colloidal Quantum Dots: Progress and Opportunities in Solar Technologies. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402912. [PMID: 38923167 DOI: 10.1002/adma.202402912] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2024] [Revised: 06/13/2024] [Indexed: 06/28/2024]
Abstract
Colloidal quantum dots (QDs) hold great promise as building blocks in solar technologies owing to their remarkable photostability and adjustable properties through the rationale involving size, atomic composition of core and shell, shapes, and surface states. However, most high-performing QDs in solar conversion contain hazardous metal elements, including Cd and Pb, posing significant environmental risks. Here, a comprehensive review of heavy-metal-free colloidal QDs for solar technologies, including photovoltaic (PV) devices, solar-to-chemical fuel conversion, and luminescent solar concentrators (LSCs), is presented. Emerging synthetic strategies to optimize the optical properties by tuning the energy band structure and manipulating charge dynamics within the QDs and at the QDs/charge acceptors interfaces, are analyzed. A comparative analysis of different synthetic methods is provided, structure-property relationships in these materials are discussed, and they are correlated with the performance of solar devices. This work is concluded with an outlook on challenges and opportunities for future work, including machine learning-based design, sustainable synthesis, and new surface/interface engineering.
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Affiliation(s)
- Lei Jin
- Centre for Energy, Materials and Telecommunications, National Institute of Scientific Research, 1650 Boul. Lionel-Boulet, Varennes, QC, J3X1P7, Canada
- Department of Chemistry, McGill University, 801 Sherbrooke Street West, Montreal, QC, H3A 0B8, Canada
| | - Gurpreet Singh Selopal
- Department of Engineering, Faculty of Agriculture, Dalhousie University, 39 Cox Rd, Banting Building, Truro, NS, B2N 5E3, Canada
| | - Xin Tong
- Shimmer Center, Tianfu Jiangxi Laboratory, Chengdu, 641419, P. R. China
| | - Dmytro F Perepichka
- Department of Chemistry, McGill University, 801 Sherbrooke Street West, Montreal, QC, H3A 0B8, Canada
| | - Zhiming M Wang
- Shimmer Center, Tianfu Jiangxi Laboratory, Chengdu, 641419, P. R. China
| | - Federico Rosei
- Department of Chemical and Pharmaceutical Sciences, University of Trieste, Via Giorgeri 1, Trieste, 34127, Italy
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6
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Fan K, Sergeeva KA, Sergeev AA, Zhang L, Chan CCS, Li Z, Zhong X, Kershaw SV, Liu J, Rogach AL, Wong KS. Slow Hot-Exciton Cooling and Enhanced Interparticle Excitonic Coupling in HgTe Quantum Dots. ACS NANO 2024; 18:18011-18021. [PMID: 38935537 DOI: 10.1021/acsnano.4c05061] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/29/2024]
Abstract
Rapid hot-carrier/exciton cooling constitutes a major loss channel for photovoltaic efficiency. How to decelerate the hot-carrier/exciton relaxation remains a crux for achieving high-performance photovoltaic devices. Here, we demonstrate slow hot-exciton cooling that can be extended to hundreds of picoseconds in colloidal HgTe quantum dots (QDs). The energy loss rate is 1 order of magnitude smaller than bulk inorganic semiconductors, mediated by phonon bottleneck and interband biexciton Auger recombination (BAR) effects, which are both augmented at reduced QD sizes. The two effects are competitive with the emergence of multiple exciton generation. Intriguingly, BAR dominates even under low excitation fluences with a decrease in interparticle distance. Both experimental evidence and numerical evidence reveal that such efficient BAR derives from the tunneling-mediated interparticle excitonic coupling induced by wave function overlap between neighboring HgTe QDs in films. Thus, our study unveils the potential for realizing efficient hot-carrier/exciton solar cells based on HgTe QDs. Fundamentally, we reveal that the delocalized nature of quantum-confined wave function intensifies BAR. The interparticle excitonic coupling may cast light on the development of next-generation photoelectronic materials, which can retain the size-tunable confinement of colloidal semiconductor QDs while simultaneously maintaining high mobilities and conductivities typical for bulk semiconductor materials.
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Affiliation(s)
- Kezhou Fan
- Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong S.A.R., P. R. China
| | - Kseniia A Sergeeva
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong S.A.R., P. R. China
| | - Aleksandr A Sergeev
- Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong S.A.R., P. R. China
- Far-Eastern Branch of Russian Academy of Sciences, Institute of Automation and Control Processes, Vladivostok 690041, Russia
| | - Lu Zhang
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong S.A.R., P. R. China
| | - Christopher C S Chan
- Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong S.A.R., P. R. China
| | - Zhuo Li
- TRACE EM Unit and Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong S.A.R., P. R. China
- City University of Hong Kong Matter Science Research Institute (Futian, Shenzhen), Shenzhen 518048, P. R. China
- Nanomanufacturing Laboratory (NML), City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Xiaoyan Zhong
- TRACE EM Unit and Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong S.A.R., P. R. China
- City University of Hong Kong Matter Science Research Institute (Futian, Shenzhen), Shenzhen 518048, P. R. China
- Nanomanufacturing Laboratory (NML), City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Stephen V Kershaw
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong S.A.R., P. R. China
| | - Junwei Liu
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong S.A.R., P. R. China
| | - Andrey L Rogach
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong S.A.R., P. R. China
| | - Kam Sing Wong
- Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong S.A.R., P. R. China
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7
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Wang S, Liu R, Li J, Meng C, Liu J, Chen J, Cheng P, Wu K. Blue Long Afterglow and Ultra Broadband Vis-NIR Emission from All-Inorganic Copper-Doped Silver Halide Single Crystals. Angew Chem Int Ed Engl 2024; 63:e202403927. [PMID: 38632085 DOI: 10.1002/anie.202403927] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/26/2024] [Revised: 03/15/2024] [Accepted: 04/17/2024] [Indexed: 04/19/2024]
Abstract
All-inorganic metal halides with afterglow emission have attracted increasing attention due to their significantly longer afterglow duration and higher stability compared to their organic-inorganic hybrid counterparts. However, their afterglow colors have not yet reached the blue spectral region. Here, we report all-inorganic copper-doped Rb2AgBr3 single crystals with ultralong blue afterglow (>300 s) by modulating defect states through doping engineering. The introduction of copper(I) ions into Rb2AgBr3 facilitates the formation of bromine vacancies, thus increasing the density of trap states available for charge storage and enabling bright, persistent emission after ceasing the excitation. Moreover, cascade energy transfer between distinct emissive centers in the crystals results in ultra-broadband photoluminescence, not only covering the whole white light with near-unity quantum yield but also extending into the near-infrared region. This 'cocktail' of exotic light-emission properties, in conjunction with the excellent stability of copper-doped Rb2AgBr3 crystals, allowed us to demonstrate their implementation to solid-state lighting, night vision, and intelligent anti-counterfeiting.
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Affiliation(s)
- Sijia Wang
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Runze Liu
- School of Science, Dalian Jiaotong University, Dalian, 116028, P. R. China
| | - Juntao Li
- Key Laboratory of Chemical Lasers, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, P. R. China
| | - Caixia Meng
- Dalian National Laboratory for Clean Energy, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, P. R. China
| | - Jianyong Liu
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Junsheng Chen
- Nano-Science Center & Department of Chemistry, University of Copenhagen, Universitetsparken 5, 2100, Copenhagen, Denmark
| | - Pengfei Cheng
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Kaifeng Wu
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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8
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Li Q, Wu K, Zhu H, Yang Y, He S, Lian T. Charge Transfer from Quantum-Confined 0D, 1D, and 2D Nanocrystals. Chem Rev 2024; 124:5695-5763. [PMID: 38629390 PMCID: PMC11082908 DOI: 10.1021/acs.chemrev.3c00742] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/12/2023] [Revised: 03/29/2024] [Accepted: 04/02/2024] [Indexed: 05/09/2024]
Abstract
The properties of colloidal quantum-confined semiconductor nanocrystals (NCs), including zero-dimensional (0D) quantum dots, 1D nanorods, 2D nanoplatelets, and their heterostructures, can be tuned through their size, dimensionality, and material composition. In their photovoltaic and photocatalytic applications, a key step is to generate spatially separated and long-lived electrons and holes by interfacial charge transfer. These charge transfer properties have been extensively studied recently, which is the subject of this Review. The Review starts with a summary of the electronic structure and optical properties of 0D-2D nanocrystals, followed by the advances in wave function engineering, a novel way to control the spatial distribution of electrons and holes, through their size, dimension, and composition. It discusses the dependence of NC charge transfer on various parameters and the development of the Auger-assisted charge transfer model. Recent advances in understanding multiple exciton generation, decay, and dissociation are also discussed, with an emphasis on multiple carrier transfer. Finally, the applications of nanocrystal-based systems for photocatalysis are reviewed, focusing on the photodriven charge separation and recombination processes that dictate the function and performance of these materials. The Review ends with a summary and outlook of key remaining challenges and promising future directions in the field.
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Affiliation(s)
- Qiuyang Li
- Department
of Physics, University of Michigan, 450 Church St, Ann Arbor, Michigan 48109, United States
| | - Kaifeng Wu
- State
Key Laboratory of Molecular Reaction Dynamics and Collaborative Innovation
Center of Chemistry for Energy Materials (iChEM), Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning 116023, China
- University
of Chinese Academy of Sciences, Beijing 100049, China
| | - Haiming Zhu
- Department
of Chemistry, Zhejiang University, Hangzhou, Zhejiang 310027, China
| | - Ye Yang
- The
State Key Laboratory of Physical Chemistry of Solid Surfaces, iChEM
(Collaborative Innovation Center of Chemistry for Energy Materials),
College of Chemistry & Chemical Engineering, Xiamen University, Xiamen, Fujian 361005, China
| | - Sheng He
- Department
of Chemistry, Emory University, Atlanta, Georgia 30322, United States
| | - Tianquan Lian
- Department
of Chemistry, Emory University, Atlanta, Georgia 30322, United States
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9
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Zhang M, Liu Z, Wang J, Chen Z, Jiang G, Zhang Q, Li Z. Generating Long-Lived Charge Carriers in CdS Quantum Dots by Cu-Doping for Photocatalytic CO 2 Reduction. Inorg Chem 2024; 63:2234-2240. [PMID: 38214981 DOI: 10.1021/acs.inorgchem.3c04196] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2024]
Abstract
Converting CO2 into high-value-added chemicals has been recognized as a promising way to tackle the fossil fuel crisis. Quantum dots (QDs) have been extensively studied for photocatalytic CO2 reduction due to their excellent optoelectronic properties. However, most of the photogenerated charge carriers recombine before they participate in the photocatalytic reaction. It is crucial to regulate the charge carriers to minimize undesired charge recombination, thus, promoting surface photocatalysis. Herein, we report a copper-doped CdS (Cu:CdS) QD photocatalyst for CO2 reduction. Density functional theory simulations and experimental results demonstrate that Cu dopants create intermediate energy levels in CdS QDs that can extend the lifetime of exciton charge carriers. Furthermore, the long-lived charge carriers can be harnessed for the photocatalytic reaction on Cu:CdS QDs. The resultant Cu:CdS QDs exhibited a significantly enhanced photocatalytic activity toward CO2 reduction compared to the pristine CdS QDs. This work highlights the importance of charge regulation in photocatalysts and opens new pathways for the exploration of efficient QD photocatalysts.
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Affiliation(s)
- Meng Zhang
- Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Zhejiang Normal University, Jinhua, Zhejiang 321004, P. R. China
| | - Zhihong Liu
- Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Zhejiang Normal University, Jinhua, Zhejiang 321004, P. R. China
| | - Jin Wang
- Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Zhejiang Normal University, Jinhua, Zhejiang 321004, P. R. China
- Zhejiang Institute of Photoelectronics, Zhejiang Normal University, Jinhua, Zhejiang 321004, P. R. China
| | - Zhihao Chen
- Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Zhejiang Normal University, Jinhua, Zhejiang 321004, P. R. China
| | - Guocan Jiang
- Zhejiang Institute of Photoelectronics, Zhejiang Normal University, Jinhua, Zhejiang 321004, P. R. China
| | - Qiaowen Zhang
- Zhejiang Normal University, Jinhua, Zhejiang 321004, P. R. China
| | - Zhengquan Li
- Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Zhejiang Normal University, Jinhua, Zhejiang 321004, P. R. China
- Zhejiang Institute of Photoelectronics, Zhejiang Normal University, Jinhua, Zhejiang 321004, P. R. China
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10
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Fang J, Li P, Zhang L, Li X, Zhang J, Qin C, Debnath T, Huang W, Chen R. Stimulating Phonon Bottleneck Effect in Organic Semiconductors by Charge-Transfer-Mediated J-Aggregation. J Am Chem Soc 2024; 146:961-969. [PMID: 38157246 DOI: 10.1021/jacs.3c11262] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/03/2024]
Abstract
Hot carriers rapidly lose kinetic energies on a subpicosecond time scale, posing significant limitations on semiconductors' photon-conversion efficiencies. To slow the hot carrier cooling, the phonon bottleneck effect is constructed prevalently in quantum-confined structures with discrete energy levels. However, the maximum energy separation (ΔEES) between the energy levels is in a range of several hundred meV, leading to unsatisfactory cooling time. To address this, we design a novel organic semiconductor capable of forming intermolecular charge transfer (CT) in J-aggregates, where the lowest singlet excited state (S1) splits into two states due to the significant interplay between the Coulomb interaction and intermolecular CT coupling. The ΔEES between the two states can be adjusted up to 1.02 eV, and an extremely slow carrier cooling process of ∼72.3 ps was observed by femtosecond transient absorption spectroscopy. Moreover, the phonon bottleneck effect was identified in organic materials for the first time, and CT-mediated J-aggregation with short-range interactions was found to be the key to achieving large ΔEES. The significantly prolonged carrier cooling time, compared to <100 fs in the isolated molecule (10-6 M), highlights the potential of organic molecules with diversified aggregation structures in achieving long-lived hot carriers. These findings provide valuable insights into the intrinsic photophysics of electron-phonon scattering in organic semiconductors.
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Affiliation(s)
- Jiawen Fang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
| | - Ping Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
| | - Longyan Zhang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
| | - Xiuzhi Li
- Henan Key Laboratory of Infrared Materials and Spectrum Measures and Applications, School of Physics, Henan Normal University, Xinxiang 453007, China
| | - Jingyu Zhang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
| | - Chaochao Qin
- Henan Key Laboratory of Infrared Materials and Spectrum Measures and Applications, School of Physics, Henan Normal University, Xinxiang 453007, China
| | - Tushar Debnath
- Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India
| | - Wei Huang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
- Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an 710072, Shaanxi, China
| | - Runfeng Chen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
- School of Materials Science and Engineering, Zhejiang Sci-Tech University, Hangzhou 310018, China
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11
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Brosseau P, Ghosh A, Seiler H, Strandell D, Kambhampati P. Exciton-polaron interactions in metal halide perovskite nanocrystals revealed via two-dimensional electronic spectroscopy. J Chem Phys 2023; 159:184711. [PMID: 37962451 DOI: 10.1063/5.0173369] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/21/2023] [Accepted: 10/19/2023] [Indexed: 11/15/2023] Open
Abstract
Metal halide perovskite nanocrystals have been under intense investigation for their promise in optoelectronic devices due to their remarkable physics, such as liquid/solid duality. This liquid/solid duality may give rise to their defect tolerance and other such useful properties. This duality means that the electronic states are fluctuating in time, on a distribution of timescales from femtoseconds to picoseconds. Hence, these lattice induced energy fluctuations that are connected to polaron formation are also connected to exciton formation and dynamics. We observe these correlations and dynamics in metal halide perovskite nanocrystals of CsPbI3 and CsPbBr3 using two-dimensional electronic (2DE) spectroscopy, with its unique ability to resolve dynamics in heterogeneously broadened systems. The 2DE spectra immediately reveal a previously unobserved excitonic splitting in these 15 nm NCs that may have a coarse excitonic structure. 2D lineshape dynamics reveal a glassy response on the 300 fs timescale due to polaron formation. The lighter Br system shows larger amplitude and faster timescale fluctuations that give rise to dynamic line broadening. The 2DE signals enable 1D transient absorption analysis of exciton cooling dynamics. Exciton cooling within this doublet is shown to take place on a slower timescale than within the excitonic continuum. The energy dissipation rates are the same for the I and Br systems for incoherent exciton cooling but are very different for the coherent dynamics that give rise to line broadening. Exciton cooling is shown to take place on the same timescale as polaron formation, revealing both as coupled many-body excitation.
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Affiliation(s)
- Patrick Brosseau
- Department of Chemistry, McGill University, Montreal, Quebec H3A 0B8, Canada
| | - Arnab Ghosh
- Department of Chemistry, McGill University, Montreal, Quebec H3A 0B8, Canada
| | - Helene Seiler
- Department of Chemistry, McGill University, Montreal, Quebec H3A 0B8, Canada
| | - Dallas Strandell
- Department of Chemistry, McGill University, Montreal, Quebec H3A 0B8, Canada
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12
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Thrupthika T, Nataraj D, Ramya S, Sangeetha A, Thangadurai TD. Induced UV photon sensing properties in narrow bandgap CdTe quantum dots through controlling hot electron dynamics. Phys Chem Chem Phys 2023; 25:25331-25343. [PMID: 37702661 DOI: 10.1039/d3cp02424e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/14/2023]
Abstract
Mn-doped CdTe (Mn-CdTe) quantum dot (QD) as well as quantum dot solid (QD solid) nanostructures are formed and the established structures are confirmed through HR-TEM analysis. The dynamics of charge carriers in both doped & undoped QD and QD solid structures were investigated by transient absorption (TA) spectroscopy. A slow band edge bleach recovery is obtained for Mn-doped CdTe QD and CdTe QD solid systems at room temperature. Additionally, a blue shifted broad bleach behaviour is identified for the Mn-CdTe QD solid system, which is attributed to hot exciton formation in the solid upon photoexcitation with a higher photon energy than the band gap energy (hν > Eg). This noteworthy process of generation of hot excitons and slow charge recombination occurs by means of a synergetic action of the Mn dopant in the host CdTe QD solid system as well as the extended electronic wave function between the coupled QD solid. Apart from the Mn-assisted delayed relaxation of hot electrons in the QD solid, a suppression in dark current as well as a high ION/IOFF ratio of 3203.12 at 1 V is observed in the Mn-CdTe QD-solid based photosensitized device in the visible region. Furthermore, we were able to improve the UV photon harvesting property in a narrow band gap Mn-CdTe QD solid through reducing the higher excited carrier's energy losses.
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Affiliation(s)
- Thankappan Thrupthika
- Quantum Materials & Devices Laboratory, Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu 641 046, India.
| | - Devaraj Nataraj
- Quantum Materials & Devices Laboratory, Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu 641 046, India.
- UGC-CPEPA Centre for Advanced Studies in Physics for the Development of Solar Energy Materials and Devices, Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu, 641 046, India
| | - Subramaniam Ramya
- Quantum Materials & Devices Laboratory, Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu 641 046, India.
| | - Arumugam Sangeetha
- Quantum Materials & Devices Laboratory, Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu 641 046, India.
| | - T Daniel Thangadurai
- KPR Institute of Engineering and Technology, Coimbatore, Tamil Nadu, 641 407, India.
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13
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Li Y, Gao Y, Deng Z, Cao Y, Wang T, Wang Y, Zhang C, Yuan M, Xie W. Visible-light-driven reversible shuttle vicinal dihalogenation using lead halide perovskite quantum dot catalysts. Nat Commun 2023; 14:4673. [PMID: 37537156 PMCID: PMC10400542 DOI: 10.1038/s41467-023-40359-x] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/25/2022] [Accepted: 07/21/2023] [Indexed: 08/05/2023] Open
Abstract
Dihalogenation of alkenes to the high-added value vicinal dihalides is a prominent process in modern synthetic chemistry. However, their effective conversion still requires the use of expensive and hazardous agents, sacrificial half-reaction coupling or primary energy input. Here, we show a photocatalytically assisted shuttle (p-shuttle) strategy for redox-neutral and reversible vicinal dihalogenation using low-cost and stable 1,2-dihaloethane under visible light illumination. Energetic hot electrons from metal-halide perovskite QDs enable the challenging photocatalytic reactions. Ultrafast laser transient absorption spectroscopy have unveiled the energy matching of the hot electrons with the high reduction potential of 1,2-dihaloethane, via two consecutive photoexcitation process. Powered by the sustainable energy as the only energy input, our new catalytic system using metal-halide perovskite QDs for dibromination, dichlorination and even unexplored hetero-dihalogenation, shows good tolerance with a wide range of alkenes at room temperature. In contrast to homogeneous photocatalysts, chalcogenide QDs and other semiconductor catalysts, perovskite QDs deliver previously unattainable performance in photoredox shuttle vicinal dihalogenation with the turnover number over 120,000. This work provides new opportunities in visible-light-driven heterogeneous catalysis for unlocking novel chemical transformations.
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Affiliation(s)
- Yonglong Li
- State Key Laboratory of Advanced Chemical Power Sources, Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Haihe Laboratory of Sustainable Chemical Transformations, Renewable Energy Conversion and Storage Center, College of Chemistry, Nankai University, Tianjin, 300071, P. R. China
| | - Yangxuan Gao
- State Key Laboratory of Advanced Chemical Power Sources, Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Haihe Laboratory of Sustainable Chemical Transformations, Renewable Energy Conversion and Storage Center, College of Chemistry, Nankai University, Tianjin, 300071, P. R. China
| | - Zhijie Deng
- State Key Laboratory of Elemento-Organic Chemistry, College of Chemistry, Nankai University, Tianjin, 300071, P. R. China
- Mount Sinai Center for Therapeutics Discovery, Departments of Pharmacological Sciences, Oncological Sciences and Neuroscience, Tisch Cancer Institute, Icahn School of Medicine at Mount Sinai, New York, NY, 10029, USA
| | - Yutao Cao
- State Key Laboratory of Advanced Chemical Power Sources, Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Haihe Laboratory of Sustainable Chemical Transformations, Renewable Energy Conversion and Storage Center, College of Chemistry, Nankai University, Tianjin, 300071, P. R. China
| | - Teng Wang
- State Key Laboratory of Advanced Chemical Power Sources, Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Haihe Laboratory of Sustainable Chemical Transformations, Renewable Energy Conversion and Storage Center, College of Chemistry, Nankai University, Tianjin, 300071, P. R. China
| | - Ying Wang
- State Key Laboratory of Advanced Chemical Power Sources, Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Haihe Laboratory of Sustainable Chemical Transformations, Renewable Energy Conversion and Storage Center, College of Chemistry, Nankai University, Tianjin, 300071, P. R. China
| | - Cancan Zhang
- State Key Laboratory of Advanced Chemical Power Sources, Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Haihe Laboratory of Sustainable Chemical Transformations, Renewable Energy Conversion and Storage Center, College of Chemistry, Nankai University, Tianjin, 300071, P. R. China
- State Key Laboratory of Marine Resource Utilization in South China Sea, Hainan Provincial Key Laboratory of Research on Utilization of Si-Zr-Ti Resources, College of Materials Science and Engineering, Hainan University, Haikou, 570228, P. R. China
| | - Mingjian Yuan
- State Key Laboratory of Advanced Chemical Power Sources, Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Haihe Laboratory of Sustainable Chemical Transformations, Renewable Energy Conversion and Storage Center, College of Chemistry, Nankai University, Tianjin, 300071, P. R. China
| | - Wei Xie
- State Key Laboratory of Advanced Chemical Power Sources, Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Haihe Laboratory of Sustainable Chemical Transformations, Renewable Energy Conversion and Storage Center, College of Chemistry, Nankai University, Tianjin, 300071, P. R. China.
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14
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Yue L, Li J, Qi Y, Chen J, Wang X, Cao J. Auger Recombination and Carrier-Lattice Thermalization in Semiconductor Quantum Dots under Intense Excitation. NANO LETTERS 2023; 23:2578-2585. [PMID: 36972411 DOI: 10.1021/acs.nanolett.2c04804] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
A thorough understanding of the photocarrier relaxation dynamics in semiconductor quantum dots (QDs) is essential to optimize their device performance. However, resolving hot carrier kinetics under high excitation conditions with multiple excitons per dot is challenging because it convolutes several ultrafast processes, including Auger recombination, carrier-phonon scattering, and phonon thermalization. Here, we report a systematic study of the lattice dynamics induced by intense photoexcitation in PbSe QDs. By probing the dynamics from the lattice perspective using ultrafast electron diffraction together with modeling the correlated processes collectively, we can differentiate their roles in photocarrier relaxation. The results reveal that the observed lattice heating time scale is longer than that of carrier intraband relaxation obtained previously using transient optical spectroscopy. Moreover, we find that Auger recombination efficiently annihilates excitons and speeds up lattice heating. This work can be readily extended to other semiconductor QDs systems with varying dot sizes.
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Affiliation(s)
- Luye Yue
- Center for Ultrafast Science and Technology, Key Laboratory for Laser Plasmas (Ministry of Education) and School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Jingjun Li
- Center for Ultrafast Science and Technology, Key Laboratory for Laser Plasmas (Ministry of Education) and School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Yingpeng Qi
- Center for Ultrafast Science and Technology, Key Laboratory for Laser Plasmas (Ministry of Education) and School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Jie Chen
- Center for Ultrafast Science and Technology, Key Laboratory for Laser Plasmas (Ministry of Education) and School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xuan Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Jianming Cao
- Center for Ultrafast Science and Technology, Key Laboratory for Laser Plasmas (Ministry of Education) and School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Physics Department and National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, United States
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15
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Cuadra L, Salcedo-Sanz S, Nieto-Borge JC. Carrier Transport in Colloidal Quantum Dot Intermediate Band Solar Cell Materials Using Network Science. Int J Mol Sci 2023; 24:3797. [PMID: 36835214 PMCID: PMC9960920 DOI: 10.3390/ijms24043797] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/23/2022] [Revised: 02/05/2023] [Accepted: 02/08/2023] [Indexed: 02/17/2023] Open
Abstract
Colloidal quantum dots (CQDs) have been proposed to obtain intermediate band (IB) materials. The IB solar cell can absorb sub-band-gap photons via an isolated IB within the gap, generating extra electron-hole pairs that increase the current without degrading the voltage, as has been demonstrated experimentally for real cells. In this paper, we model the electron hopping transport (HT) as a network embedded in space and energy so that a node represents the first excited electron state localized in a CQD while a link encodes the Miller-Abrahams (MA) hopping rate for the electron to hop from one node (=state) to another, forming an "electron-HT network". Similarly, we model the hole-HT system as a network so that a node encodes the first hole state localized in a CQD while a link represents the MA hopping rate for the hole to hop between nodes, leading to a "hole-HT network". The associated network Laplacian matrices allow for studying carrier dynamics in both networks. Our simulations suggest that reducing both the carrier effective mass in the ligand and the inter-dot distance increases HT efficiency. We have found a design constraint: It is necessary for the average barrier height to be larger than the energetic disorder to not degrade intra-band absorption.
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Affiliation(s)
- Lucas Cuadra
- Department of Signal Processing and Communications, University of Alcalá, 28805 Madrid, Spain
- Department of Physics and Mathematics, University of Alcalá, 28805 Madrid, Spain
| | - Sancho Salcedo-Sanz
- Department of Signal Processing and Communications, University of Alcalá, 28805 Madrid, Spain
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16
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Kaur A, Goswami T, Babu KJ, Shukla A, Bhatt H, Ghosh HN. Efficient Hot Electron Transfer and Extended Separation of Charge Carriers at the 1P Hot State in Sb 2Se 3/CdSe p-n Heterojunction. J Phys Chem Lett 2022; 13:11354-11362. [PMID: 36454185 DOI: 10.1021/acs.jpclett.2c03308] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Utilization of hot carriers is very crucial in improving the efficiency of solar energy devices. In this work, we have fabricated an Sb2Se3/CdSe p-n heterojunction via a cation exchange method and investigated the possibility of hot electron transfer and relaxation pathways through ultrafast spectroscopy. The enhanced intensity of the CdSe hot excitonic (1P) bleach in the heterostructure system confirmed the hot electron transfer from Sb2Se3 to CdSe. Both the 1S and 1P signals are dynamically very slow in the heterosystem, validating this charge migration phenomenon. Interestingly, recovery of the 1P signal is much slower than that of 1S. This is very unusual as 1S is the lowest-energy state. This observation indicates the strength of hot electron transfer in this unique heterojunction, which helps in increasing the carrier lifetime in the hot state. Extended separation of charge carriers and enhanced hot carrier lifetime would be extremely helpful in extracting carriers and boost the performance of optoelectronic devices.
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Affiliation(s)
- Arshdeep Kaur
- Institute of Nano Science and Technology, SAS Nagar, Sector 81, Mohali, Punjab 140306,India
| | - Tanmay Goswami
- Institute of Nano Science and Technology, SAS Nagar, Sector 81, Mohali, Punjab 140306,India
| | - K Justice Babu
- Institute of Nano Science and Technology, SAS Nagar, Sector 81, Mohali, Punjab 140306,India
| | - Ayushi Shukla
- Institute of Nano Science and Technology, SAS Nagar, Sector 81, Mohali, Punjab 140306,India
| | - Himanshu Bhatt
- Institute of Nano Science and Technology, SAS Nagar, Sector 81, Mohali, Punjab 140306,India
| | - Hirendra N Ghosh
- Institute of Nano Science and Technology, SAS Nagar, Sector 81, Mohali, Punjab 140306,India
- Radiation and Photochemistry Division, Bhabha Atomic Research Centre, Mumbai 400085,India
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17
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Prins PT, Spruijt DAW, Mangnus MJJ, Rabouw FT, Vanmaekelbergh D, de Mello Donega C, Geiregat P. Slow Hole Localization and Fast Electron Cooling in Cu-Doped InP/ZnSe Quantum Dots. J Phys Chem Lett 2022; 13:9950-9956. [PMID: 36260410 DOI: 10.1021/acs.jpclett.2c02764] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Impurity doping of low-dimensional semiconductors is an interesting route towards achieving control over carrier dynamics and energetics, e.g., to improve hot carrier extraction, or to obtain strongly Stokes shifted luminescence. Such studies remain, however, underexplored for the emerging family of III-V colloidal quantum dots (QDs). Here, we show through a detailed global analysis of multiresonant pump-probe spectroscopy that electron cooling in copper-doped InP quantum dot (QDs) proceeds on subpicosecond time scales. Conversely, hole localization on Cu dopants is remarkably slow (1.8 ps), yet still leads to very efficient subgap emission. Due to this slow hole localization, common Auger assisted pathways in electron cooling cannot be blocked by Cu doping III-V systems, in contrast with the case of II-VI QDs. Finally, we argue that the structural relaxation around the Cu dopants, estimated to impart a reorganization energy of 220 meV, most likely proceeds simultaneously with the localization itself leading to efficient luminescence.
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Affiliation(s)
- P Tim Prins
- Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 1, 3584CC Utrecht, The Netherlands
| | - Dirk A W Spruijt
- Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 1, 3584CC Utrecht, The Netherlands
| | - Mark J J Mangnus
- Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 1, 3584CC Utrecht, The Netherlands
| | - Freddy T Rabouw
- Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 1, 3584CC Utrecht, The Netherlands
| | - Daniel Vanmaekelbergh
- Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 1, 3584CC Utrecht, The Netherlands
| | - Celso de Mello Donega
- Debye Institute for Nanomaterials Science, Utrecht University, Princetonplein 1, 3584CC Utrecht, The Netherlands
| | - Pieter Geiregat
- Department of Chemistry, Ghent University, Krijgslaan 281, 9000 Gent, Belgium
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18
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Quan C, Xing X, Jia T, Zhang Z, Wang C, Huang S, Liu Z, Du J, Leng Y. Hot Carrier Transfer in PtSe 2/Graphene Enabled by the Hot Phonon Bottleneck. J Phys Chem Lett 2022; 13:9456-9463. [PMID: 36197092 DOI: 10.1021/acs.jpclett.2c02378] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The charge transfer (CT) process of two-dimensional (2D) graphene/transition metal dichalcogenides (TMDs) heterostructures makes the photoelectric conversion ability of TMDs into a wider spectral range for the light harvester and photoelectric detector applications. However, the direct in situ investigation of the hot carrier transport in graphene/TMDs heterostructures has been rarely reported. Herein, using the optical pump and a terahertz (THz) probe (OPTP) spectroscopy, the CT process from graphene to five-layer PtSe2 in the PtSe2/graphene (P/G) heterostructure is demonstrated to be related to the pump fluence, which is enabled by the hot phonon bottleneck (HPB) effect in graphene. Furthermore, the frequency dispersion conductivity and the THz emission spectroscopy of the P/G heterostructure confirmed the existence of interlayer CT and its pump fluence-dependent behavior. Our results provide in-depth physical insights into the CT mechanism at the P/G van der Waals interface, which is crucial for further exploration of optoelectronic devices based on P/G heterostructures.
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Affiliation(s)
- Chenjing Quan
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai201800, People's Republic of China
- School of Physics Science and Engineering, Tongji University, Shanghai200092, People's Republic of China
| | - Xiao Xing
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai201800, People's Republic of China
| | - Tingyuan Jia
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai201800, People's Republic of China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, Zhejiang310024, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
| | - Zeyu Zhang
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai201800, People's Republic of China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, Zhejiang310024, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
| | - Chunwei Wang
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai201800, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
| | - Sihao Huang
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai201800, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
| | - Zhengzheng Liu
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai201800, People's Republic of China
| | - Juan Du
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai201800, People's Republic of China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, Zhejiang310024, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
| | - Yuxin Leng
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai201800, People's Republic of China
- School of Physics Science and Engineering, Tongji University, Shanghai200092, People's Republic of China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, Zhejiang310024, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing100049, People's Republic of China
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19
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Sun Q, Gong J, Yan X, Wu Y, Cui R, Tian W, Jin S, Wang Y. Elucidating the Unique Hot Carrier Cooling in Two-Dimensional Inorganic Halide Perovskites: The Role of Out-of-Plane Carrier-Phonon Coupling. NANO LETTERS 2022; 22:2995-3002. [PMID: 35318847 DOI: 10.1021/acs.nanolett.2c00203] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) halide perovskites represent the natural semiconductor quantum wells (QWs), which hold great promise for optoelectronics. However, due to the hybrid structure of Ruddlesden-Popper 2D perovskites, the intrinsic nature of hot-carrier kinetics remains shielded within. Herein, we adopt CsPbBr3 nanoplates as a model system to reveal the intrinsic carrier dynamics in inorganic perovskite QWs. Interestingly, we revealed an ultrafast and hot-phonon-bottleneck (HPB)-free carrier cooling in monodisperse CsPbBr3 QWs, which is in sharp contrast to the bulk and nanocrystalline perovskites. The absence of HPB was attributed to the efficient out-of-plane triplet-exciton-LO-phonon coupling in 2D perovskites because of the structural anisotropy. Accordingly, the HPB can be activated by shutting down the out-of-plane energy loss route through forming the layer-stacked perovskite superlattice. The controllable on and off of HPB may provide new possibilities in optoelectronic devices and these findings deepen the understanding of a hot-carrier cooling mechanism in 2D perovskites.
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Affiliation(s)
- Qi Sun
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics and Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Jialong Gong
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics and Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Xianchang Yan
- State Key Laboratory of Molecular Reaction Dynamics and the Dynamic Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
| | - Yuting Wu
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics and Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Rongrong Cui
- State Key Laboratory of Molecular Reaction Dynamics and the Dynamic Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
| | - Wenming Tian
- State Key Laboratory of Molecular Reaction Dynamics and the Dynamic Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
| | - Shengye Jin
- State Key Laboratory of Molecular Reaction Dynamics and the Dynamic Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
| | - Yue Wang
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics and Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
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20
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Li J, Guan T, Tu D, Lian W, Zhang P, Han S, Wen F, Chen X. Highly efficient NIR-II luminescent I-III-VI semiconductor nanoprobes based on AgInTe 2:Zn/ZnS nanocrystals. Chem Commun (Camb) 2022; 58:2204-2207. [PMID: 35072671 DOI: 10.1039/d1cc05533j] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/02/2023]
Abstract
Highly efficient luminescence of AgInTe2:Zn/ZnS nanocrystals with the maximum NIR-II quantum yield of 25.2% has been designed through elaborately manipulating the structure to reduce their internal and surface defects. These AgInTe2:Zn/ZnS nanoprobes were employed for sensitive homogeneous biodetection of xanthine oxidase with the limit of detection down to 25 nU L-1.
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Affiliation(s)
- Jiayao Li
- College of Chemical Engineering, Fuzhou University, Fujian 350116, China. .,CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Key Laboratory of Nanomaterials, and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Tianyong Guan
- College of Chemical Engineering, Fuzhou University, Fujian 350116, China. .,CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Key Laboratory of Nanomaterials, and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Datao Tu
- College of Chemical Engineering, Fuzhou University, Fujian 350116, China. .,CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Key Laboratory of Nanomaterials, and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China.,Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, China
| | - Wei Lian
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Key Laboratory of Nanomaterials, and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Peng Zhang
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Key Laboratory of Nanomaterials, and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Siyuan Han
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Key Laboratory of Nanomaterials, and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Fei Wen
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Key Laboratory of Nanomaterials, and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Xueyuan Chen
- College of Chemical Engineering, Fuzhou University, Fujian 350116, China. .,CAS Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Key Laboratory of Nanomaterials, and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China.,Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, China
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21
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Meng J, Lan Z, Lin W, Liang M, Zou X, Zhao Q, Geng H, Castelli IE, Canton SE, Pullerits T, Zheng K. Optimizing the quasi-equilibrium state of hot carriers in all-inorganic lead halide perovskite nanocrystals through Mn doping: fundamental dynamics and device perspectives. Chem Sci 2022; 13:1734-1745. [PMID: 35282633 PMCID: PMC8827087 DOI: 10.1039/d1sc05799e] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/20/2021] [Accepted: 01/10/2022] [Indexed: 11/21/2022] Open
Abstract
Hot carrier (HC) cooling accounts for the significant energy loss in lead halide perovskite (LHP) solar cells. Here, we study HC relaxation dynamics in Mn-doped LHP CsPbI3 nanocrystals (NCs), combining transient absorption spectroscopy and density functional theory (DFT) calculations. We demonstrate that Mn2+ doping (1) enlarges the longitudinal optical (LO)-acoustic phonon bandgap, (2) enhances the electron-LO phonon coupling strength, and (3) adds HC relaxation pathways via Mn orbitals within the bands. The spectroscopic study shows that the HC cooling process is decelerated after doping under band-edge excitation due to the dominant phonon bandgap enlargement. When the excitation photon energy is larger than the optical bandgap and the Mn2+ transition gap, the doping accelerates the cooling rate owing to the dominant effect of enhanced carrier-phonon coupling and relaxation pathways. We demonstrate that such a phenomenon is optimal for the application of hot carrier solar cells. The enhanced electron-LO phonon coupling and accelerated cooling of high-temperature hot carriers efficiently establish a high-temperature thermal quasi-equilibrium where the excessive energy of the hot carriers is transferred to heat the cold carriers. On the other hand, the enlarged phononic band-gap prevents further cooling of such a quasi-equilibrium, which facilitates the energy conversion process. Our results manifest a straightforward methodology to optimize the HC dynamics for hot carrier solar cells by element doping.
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Affiliation(s)
- Jie Meng
- Department of Chemistry, Technical University of Denmark DK-2800 Kongens Lyngby Denmark
| | - Zhenyun Lan
- Department of Energy Conversion and Storage, Technical University of Denmark DK-2800 Kongens Lyngby Denmark
| | - Weihua Lin
- Chemical Physics and NanoLund, Lund University Box 124 22100 Lund Sweden
| | - Mingli Liang
- Department of Chemistry, Technical University of Denmark DK-2800 Kongens Lyngby Denmark
| | - Xianshao Zou
- Chemical Physics and NanoLund, Lund University Box 124 22100 Lund Sweden
| | - Qian Zhao
- Department of Chemistry, Technical University of Denmark DK-2800 Kongens Lyngby Denmark
| | - Huifang Geng
- Ultrafast Electron Microscopy Laboratory, The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University Tianjin 300071 China
| | - Ivano E Castelli
- Department of Energy Conversion and Storage, Technical University of Denmark DK-2800 Kongens Lyngby Denmark
| | | | - Tönu Pullerits
- Chemical Physics and NanoLund, Lund University Box 124 22100 Lund Sweden
| | - Kaibo Zheng
- Department of Chemistry, Technical University of Denmark DK-2800 Kongens Lyngby Denmark
- Chemical Physics and NanoLund, Lund University Box 124 22100 Lund Sweden
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22
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Zhang J, Zhang L, Zhang Q. Element doping-induced effects in Zn-doped CdTe quantum-dot system: Insights from an ultrafast dynamics perspective. J Chem Phys 2022; 156:034701. [DOI: 10.1063/5.0078477] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022] Open
Affiliation(s)
- Jiachen Zhang
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Chemical Physics, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Lei Zhang
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Chemical Physics, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Qun Zhang
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Chemical Physics, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
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23
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Mishra K, Acharjee D, Das A, Ghosh S. Subpicosecond Hot Hole Transfer in a Graphene Quantum Dot Composite with High Efficiency. J Phys Chem Lett 2022; 13:606-613. [PMID: 35019662 DOI: 10.1021/acs.jpclett.1c03530] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Extraction of hot carriers is of prime importance because of its potential to overcome the energy loss that limits the efficiency of an optoelectronic device. Employing a femtosecond upconversion setup, herein we report a few picoseconds carrier cooling time of colloidal graphene quantum dots (GQDs) is at least an order of magnitude slower compared to that in its bulk form. A slower carrier cooling time of GQDs compared to that of the other semiconductor quantum dots and their bulk materials is indeed a coveted property of GQDs that would allow one easy harvesting of high energy species employing a suitable molecular system as shown in this study. A subpicosecond hot hole transfer time scale has been achieved in a GQD-molecular system composite with high transfer efficiency. Our finding suggests a dramatic enhancement of the efficiency of GQD based optoelectronic devices can possibly be a reality.
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Affiliation(s)
- Krishna Mishra
- School of Chemical Sciences, National Institute of Science Education and Research, Homi Bhabha National Institute (HBNI), Khurda 752050, Odisha, India
| | - Debopam Acharjee
- School of Chemical Sciences, National Institute of Science Education and Research, Homi Bhabha National Institute (HBNI), Khurda 752050, Odisha, India
| | - Ayendrila Das
- School of Chemical Sciences, National Institute of Science Education and Research, Homi Bhabha National Institute (HBNI), Khurda 752050, Odisha, India
| | - Subhadip Ghosh
- School of Chemical Sciences, National Institute of Science Education and Research, Homi Bhabha National Institute (HBNI), Khurda 752050, Odisha, India
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24
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He S, Li Q, Jin T, Lian TT. Contributions of exciton fine structure and hole trapping on the hole state filling effect in the transient absorption spectra of CdSe quantum dots. J Chem Phys 2022; 156:054704. [DOI: 10.1063/5.0081192] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Affiliation(s)
- Sheng He
- Chemistry, Emory University, United States of America
| | - Qiuyang Li
- Physics, University of Michigan, United States of America
| | - Tao Jin
- Chemistry Department, Emory University, United States of America
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25
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Kamath A, Melnychuk C, Guyot-Sionnest P. Toward Bright Mid-Infrared Emitters: Thick-Shell n-Type HgSe/CdS Nanocrystals. J Am Chem Soc 2021; 143:19567-19575. [PMID: 34752062 PMCID: PMC8630792 DOI: 10.1021/jacs.1c09858] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/29/2023]
Abstract
A procedure is developed for the growth of thick, conformal CdS shells that preserve the optical properties of 5 nm HgSe cores. The n-doping of the HgSe/CdS core/shell particles is quantitatively tuned through a simple postsynthetic Cd treatment, while the doping is monitored via the intraband optical absorption at 5 μm wavelength. Photoluminescence lifetime and quantum yield measurements show that the CdS shell greatly increases the intraband emission intensity. This indicates that decoupling the excitation from the environment reduces the nonradiative recombination. We find that weakly n-type HgSe/CdS are the brightest solution-phase mid-infrared chromophores reported to date at room temperature, achieving intraband photoluminescence quantum yields of 2%. Such photoluminescence corresponds to intraband lifetimes in excess of 10 ns, raising important questions about the fundamental limits to achievable slow intraband relaxation in quantum dots.
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Affiliation(s)
- Ananth Kamath
- Department of Chemistry and the James Franck Institute, The University of Chicago, 929 East 57th Street, Chicago, Illinois 60637, United States
| | - Christopher Melnychuk
- Department of Chemistry and the James Franck Institute, The University of Chicago, 929 East 57th Street, Chicago, Illinois 60637, United States
| | - Philippe Guyot-Sionnest
- Department of Chemistry and the James Franck Institute, The University of Chicago, 929 East 57th Street, Chicago, Illinois 60637, United States
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26
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Wang J, Ding T, Gao K, Wang L, Zhou P, Wu K. Marcus inverted region of charge transfer from low-dimensional semiconductor materials. Nat Commun 2021; 12:6333. [PMID: 34732730 PMCID: PMC8566515 DOI: 10.1038/s41467-021-26705-x] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/14/2021] [Accepted: 10/19/2021] [Indexed: 11/18/2022] Open
Abstract
A key process underlying the application of low-dimensional, quantum-confined semiconductors in energy conversion is charge transfer from these materials, which, however, has not been fully understood yet. Extensive studies of charge transfer from colloidal quantum dots reported rates increasing monotonically with driving forces, never displaying an inverted region predicted by the Marcus theory. The inverted region is likely bypassed by an Auger-like process whereby the excessive driving force is used to excite another Coulomb-coupled charge. Herein, instead of measuring charge transfer from excitonic states (coupled electron-hole pairs), we build a unique model system using zero-dimensional quantum dots or two-dimensional nanoplatelets and surface-adsorbed molecules that allows for measuring charge transfer from transiently-populated, single-charge states. The Marcus inverted region is clearly revealed in these systems. Thus, charge transfer from excitonic and single-charge states follows the Auger-assisted and conventional Marcus charge transfer models, respectively. This knowledge should enable rational design of energetics for efficient charge extraction from low-dimensional semiconductor materials as well as suppression of the associated energy-wasting charge recombination. Marcus inverted region for charge transfer from low-dimensional semiconductor materials has been long sought after. Here, the authors reveal this region by directly measuring charge transfer from single-charge states rather than excitonic states.
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Affiliation(s)
- Junhui Wang
- State Key Laboratory of Molecular Reaction Dynamics and Dynamics Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 116023, Dalian, Liaoning, China
| | - Tao Ding
- State Key Laboratory of Molecular Reaction Dynamics and Dynamics Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 116023, Dalian, Liaoning, China
| | - Kaimin Gao
- State Key Laboratory of Molecular Reaction Dynamics and Dynamics Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 116023, Dalian, Liaoning, China.,University of the Chinese Academy of Sciences, 100049, Beijing, China
| | - Lifeng Wang
- State Key Laboratory of Molecular Reaction Dynamics and Dynamics Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 116023, Dalian, Liaoning, China.,University of the Chinese Academy of Sciences, 100049, Beijing, China
| | - Panwang Zhou
- Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, 266235, Qingdao, Shandong, China
| | - Kaifeng Wu
- State Key Laboratory of Molecular Reaction Dynamics and Dynamics Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 116023, Dalian, Liaoning, China. .,University of the Chinese Academy of Sciences, 100049, Beijing, China.
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27
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Zhou M, Jin R. Optical Properties and Excited-State Dynamics of Atomically Precise Gold Nanoclusters. Annu Rev Phys Chem 2021; 72:121-142. [PMID: 33297734 DOI: 10.1146/annurev-physchem-090419-104921] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Abstract
Understanding the excited-state dynamics of nanomaterials is essential to their applications in photoenergy storage and conversion. This review summarizes recent progress in the excited-state dynamics of atomically precise gold (Au) nanoclusters (NCs). We first discuss the electronic structure and typical relaxation pathways of Au NCs from subpicoseconds to microseconds. Unlike plasmonic Au nanoparticles, in which collective electron excitation dominates, Au NCs show single-electron transitions and molecule-like exciton dynamics. The size-, shape-, structure-, and composition-dependent dynamics in Au NCs are further discussed in detail. For small-sized Au NCs, strong quantum confinement effects give rise to relaxation dynamics that is significantly dependent on atomic packing, shape, and heteroatom doping. For relatively larger-sized Au NCs, strong size dependence can be observed in exciton and electron dynamics. We also discuss the origin of coherent oscillations and their roles in excited-state relaxation. Finally, we provide our perspective on future directions in this area.
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Affiliation(s)
- Meng Zhou
- Department of Chemistry, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA;
| | - Rongchao Jin
- Department of Chemistry, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA;
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28
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Spin blockade and phonon bottleneck for hot electron relaxation observed in n-doped colloidal quantum dots. Nat Commun 2021; 12:550. [PMID: 33483503 PMCID: PMC7822822 DOI: 10.1038/s41467-020-20835-4] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/28/2020] [Accepted: 12/27/2020] [Indexed: 11/08/2022] Open
Abstract
Understanding and manipulating hot electron dynamics in semiconductors may enable disruptive energy conversion schemes. Hot electrons in bulk semiconductors usually relax via electron-phonon scattering on a sub-picosecond timescale. Quantum-confined semiconductors such as quantum dots offer a unique platform to prolong hot electron lifetime through their size-tunable electronic structures. Here, we study hot electron relaxation in electron-doped (n-doped) colloidal CdSe quantum dots. For lightly-doped dots we observe a slow 1Pe hot electron relaxation (~10 picosecond) resulting from a Pauli spin blockade of the preoccupying 1Se electron. For heavily-doped dots, a large number of electrons residing in the surface states introduce picosecond Auger recombination which annihilates the valance band hole, allowing us to observe 300-picosecond-long hot electrons as a manifestation of a phonon bottleneck effect. This brings the hot electron energy loss rate to a level of sub-meV per picosecond from a usual level of 1 eV per picosecond. These results offer exciting opportunities of hot electron harvesting by exploiting carrier-carrier, carrier-phonon and spin-spin interactions in doped quantum dots. Hot electrons in bulk semiconductors usually relax via electron-phonon scattering on a sub-picosecond timescale. Here, the authors observe hot electron lifetime as long as 320 picoseconds by performing a photochemical reduction reaction on colloidal quantum dots.
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29
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Zhou G, Lu G, Prezhdo OV. Modeling Auger Processes with Nonadiabatic Molecular Dynamics. NANO LETTERS 2021; 21:756-761. [PMID: 33320680 DOI: 10.1021/acs.nanolett.0c04442] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Auger-type energy exchange plays key roles in the carrier dynamics in nanomaterials due to strong carrier-carrier interactions. However, theoretical descriptions are limited to perturbative calculations of scattering rates on static structures. We develop an accurate and efficient ab initio technique to model Auger scattering with nonadiabatic molecular dynamics. We incorporate the many-body Coulomb matrix into several surface hopping methods and describe simultaneously charge-charge and charge-phonon scattering in the time-domain and in a nonperturbative, configuration-dependent manner. The approach is illustrated with a CdSe quantum dot. Auger scattering between electrons and holes breaks the phonon bottleneck to electron relaxation. The bottleneck is recovered when electrons and holes are decoupled. The simulations correctly reproduce all experimental processes and time scales, including Auger- and phonon-assisted cooling of hot electrons, intraband carrier relaxation, and carrier recombination. Providing detailed insights into the energy flow, the developed method allows studies of carrier dynamics in nanomaterials with strong carrier-carrier interactions.
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Affiliation(s)
- Guoqing Zhou
- Department of Physics and Astronomy, University of Southern California, Los Angeles, California 90089, United States
| | - Gang Lu
- Department of Physics and Astronomy, California State University, Northridge, California 91330, United States
| | - Oleg V Prezhdo
- Department of Physics and Astronomy, University of Southern California, Los Angeles, California 90089, United States
- Department of Chemistry, University of Southern California, Los Angeles, California 90089, United States
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30
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Affiliation(s)
- Christopher Melnychuk
- James Franck Institute, The University of Chicago, Chicago, Illinois 60637, United States
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31
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Bang J, Das S, Yu EJ, Kim K, Lim H, Kim S, Hong JW. Controlled Photoinduced Electron Transfer from InP/ZnS Quantum Dots through Cu Doping: A New Prototype for the Visible-Light Photocatalytic Hydrogen Evolution Reaction. NANO LETTERS 2020; 20:6263-6271. [PMID: 32813529 DOI: 10.1021/acs.nanolett.0c00983] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Photoexcited electron extraction from semiconductors can be useful for converting solar energy into useful forms of energy. Although InP quantum dots (QDs) are considered alternative materials for solar energy conversion, the inherent instability of bare InP QDs demands the use of passivation layers such as ZnS for practical applications, which impedes carrier extraction from the QDs. Here, we demonstrate that Cu-doped InP/ZnS (InP/Cu:ZnS) QDs improve the electron transfer ability due to hole capture by Cu dopants. Steady-state and time-resolved photoluminescence studies confirmed that electrons were effectively transferred from the InP/Cu:ZnS QDs to a benzoquinone acceptor by retarding the electron-hole recombination within the QD. We evaluated the photocatalytic H2 evolution performance of InP/Cu:ZnS QDs under visible light, which showed outstanding photocatalytic H2 evolution activity and stability under visible light illumination. The photocatalytic activity was preserved even in the absence of a cocatalyst.
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Affiliation(s)
- Jiwon Bang
- Electronic Conversion Materials Division, Korea Institute of Ceramic Engineering and Technology, Jinju 52852, Republic of Korea
- Department of Chemistry, Wonkwang University, 460 Iksandae-ro, Iksan, Jeonbuk 54538, Republic of Korea
| | - Sankar Das
- Department of Chemistry and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 44610, Republic of Korea
| | - Eun-Jin Yu
- Department of Chemistry and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 44610, Republic of Korea
| | - Kangwook Kim
- Electronic Conversion Materials Division, Korea Institute of Ceramic Engineering and Technology, Jinju 52852, Republic of Korea
- Department of Chemistry, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Hyunseob Lim
- Department of Chemistry, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
| | - Sungjee Kim
- Department of Chemistry, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Jong Wook Hong
- Department of Chemistry and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 44610, Republic of Korea
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32
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Wang J, Ding T, Nie C, Wang M, Zhou P, Wu K. Spin-Controlled Charge-Recombination Pathways across the Inorganic/Organic Interface. J Am Chem Soc 2020; 142:4723-4731. [DOI: 10.1021/jacs.9b12724] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/15/2023]
Affiliation(s)
- Junhui Wang
- State Key Laboratory of Molecular Reaction Dynamics and Dynamics Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning 116023, China
| | - Tao Ding
- State Key Laboratory of Molecular Reaction Dynamics and Dynamics Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning 116023, China
| | - Chengming Nie
- State Key Laboratory of Fine Chemicals, Institute of Artificial Photosynthesis, Dalian University of Technology, Dalian, Liaoning 116024, China
| | - Mei Wang
- State Key Laboratory of Fine Chemicals, Institute of Artificial Photosynthesis, Dalian University of Technology, Dalian, Liaoning 116024, China
| | - Panwang Zhou
- Institute of Molecular Sciences and Engineering, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao, Shandong 266235, China
| | - Kaifeng Wu
- State Key Laboratory of Molecular Reaction Dynamics and Dynamics Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning 116023, China
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