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Tang Q, Zhong F, Li Q, Weng J, Li J, Lu H, Wu H, Liu S, Wang J, Deng K, Xiao Y, Wang Z, He T. Infrared Photodetection from 2D/3D van der Waals Heterostructures. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1169. [PMID: 37049263 PMCID: PMC10096675 DOI: 10.3390/nano13071169] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/02/2023] [Revised: 03/20/2023] [Accepted: 03/21/2023] [Indexed: 06/19/2023]
Abstract
An infrared photodetector is a critical component that detects, identifies, and tracks complex targets in a detection system. Infrared photodetectors based on 3D bulk materials are widely applied in national defense, military, communications, and astronomy fields. The complex application environment requires higher performance and multi-dimensional capability. The emergence of 2D materials has brought new possibilities to develop next-generation infrared detectors. However, the inherent thickness limitations and the immature preparation of 2D materials still lead to low quantum efficiency and slow response speeds. This review summarizes 2D/3D hybrid van der Waals heterojunctions for infrared photodetection. First, the physical properties of 2D and 3D materials related to detection capability, including thickness, band gap, absorption band, quantum efficiency, and carrier mobility, are summarized. Then, the primary research progress of 2D/3D infrared detectors is reviewed from performance improvement (broadband, high-responsivity, fast response) and new functional devices (two-color detectors, polarization detectors). Importantly, combining low-doped 3D and flexible 2D materials can effectively improve the responsivity and detection speed due to a significant depletion region width. Furthermore, combining the anisotropic 2D lattice structure and high absorbance of 3D materials provides a new strategy in high-performance polarization detectors. This paper offers prospects for developing 2D/3D high-performance infrared detection technology.
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Affiliation(s)
- Qianying Tang
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Fang Zhong
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Qing Li
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Jialu Weng
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Junzhe Li
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hangyu Lu
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Haitao Wu
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shuning Liu
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiacheng Wang
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ke Deng
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Yunlong Xiao
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Zhen Wang
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Ting He
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
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Nathawat J, Mansaray I, Sakanashi K, Wada N, Randle MD, Yin S, He K, Arabchigavkani N, Dixit R, Barut B, Zhao M, Ramamoorthy H, Somphonsane R, Kim GH, Watanabe K, Taniguchi T, Aoki N, Han JE, Bird JP. Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene. Nat Commun 2023; 14:1507. [PMID: 36932096 PMCID: PMC10023744 DOI: 10.1038/s41467-023-37292-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/05/2022] [Accepted: 03/09/2023] [Indexed: 03/19/2023] Open
Abstract
Stacking of graphene with hexagonal boron nitride (h-BN) can dramatically modify its bands from their usual linear form, opening a series of narrow minigaps that are separated by wider minibands. While the resulting spectrum offers strong potential for use in functional (opto)electronic devices, a proper understanding of the dynamics of hot carriers in these bands is a prerequisite for such applications. In this work, we therefore apply a strategy of rapid electrical pulsing to drive carriers in graphene/h-BN heterostructures deep into the dissipative limit of strong electron-phonon coupling. By using electrical gating to move the chemical potential through the "Moiré bands", we demonstrate a cyclical evolution between metallic and semiconducting states. This behavior is captured in a self-consistent model of non-equilibrium transport that considers the competition of electrically driven inter-band tunneling and hot-carrier scattering by strongly non-equilibrium phonons. Overall, our results demonstrate how a treatment of the dynamics of both hot carriers and hot phonons is essential to understanding the properties of functional graphene superlattices.
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Affiliation(s)
- Jubin Nathawat
- Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA
| | - Ishiaka Mansaray
- Department of Physics, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA
| | - Kohei Sakanashi
- Department of Materials Science, Chiba University, Inage-ku, Chiba, 263-8522, Japan
| | - Naoto Wada
- Department of Materials Science, Chiba University, Inage-ku, Chiba, 263-8522, Japan
| | - Michael D Randle
- Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA
| | - Shenchu Yin
- Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA
| | - Keke He
- Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA
| | - Nargess Arabchigavkani
- Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA
| | - Ripudaman Dixit
- Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA
| | - Bilal Barut
- Department of Physics, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA
| | - Miao Zhao
- High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics of Chinese Academy of Sciences, 3 Beitucheng West Road, Chaoyang District, Beijing, 100029, PR China
| | - Harihara Ramamoorthy
- Department of Electronics Engineering, Faculty of Engineering, King Mongkut's Institute of Technology Ladkrabang, Bangkok, 10520, Thailand
| | - Ratchanok Somphonsane
- Department of Physics, Faculty of Science, King Mongkut's Institute of Technology Ladkrabang, Bangkok, 10520, Thailand
| | - Gil-Ho Kim
- School of Electronic and Electrical Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, Korea
| | - Kenji Watanabe
- Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Nobuyuki Aoki
- Department of Materials Science, Chiba University, Inage-ku, Chiba, 263-8522, Japan
| | - Jong E Han
- Department of Physics, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA.
| | - Jonathan P Bird
- Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA. .,Department of Physics, University at Buffalo, the State University of New York, Buffalo, NY, 14260, USA.
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Graphene-based optofluidic tweezers for refractive-index and size-based nanoparticle sorting, manipulation, and detection. Sci Rep 2023; 13:1975. [PMID: 36737494 PMCID: PMC9898258 DOI: 10.1038/s41598-023-29122-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/07/2022] [Accepted: 01/31/2023] [Indexed: 02/05/2023] Open
Abstract
This work proposes a novel design composed of graphene nanoribbons-based optofluidic tweezers to manipulate and sort bio-particles with radii below 2.5 nm. The suggested structure has been numerically investigated by the finite difference time domain (FDTD) method employing Maxwell's stress tensor analysis (MST). The finite element method (FEM) has been used to obtain the electrostatic response of the proposed structure. The tweezer main path is a primary channel in the center of the structure, where the microfluidic flow translates the nanoparticle toward this channel. Concerning the microfluid's drag force, the nanoparticles tend to move along the length of the main channel. The graphene nanoribbons are fixed near the main channel at different distances to exert optical forces on the moving nanoparticles in the perpendicular direction. In this regard, sub-channels embedding in the hBN layer on the Si substrate deviate bio-particles from the main path for particular nanoparticle sizes and indices. Intense hotspots with electric field enhancements up to 900 times larger than the incident light are realized inside and around the graphene ribbons. Adjusting the gap distance between the graphene nanoribbon and the main channel allows us to separate the individual particle with a specific size from others, thus guiding that in the desired sub-channel. Furthermore, we demonstrated that in a structure with a large gap between channels, particles experience weak field intensity, leading to a low optical force that is insufficient to detect, trap, and manipulate nanoparticles. By varying the chemical potential of graphene associated with the electric field intensity variations in the graphene ribbons, we realized tunability in sorting nanoparticles while structural parameters remained constant. In fact, by adjusting the graphene Fermi level via the applied gate voltage, nanoparticles with any desired radius will be quickly sorted. Moreover, we exhibited that the proposed structure could sort nanoparticles based on their refractive indices. Therefore, the given optofluidic tweezer can easily detect bio-particles, such as cancer cells and viruses of tiny size.
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Giant bipolar unidirectional photomagnetoresistance. Proc Natl Acad Sci U S A 2022; 119:e2115939119. [PMID: 35763578 PMCID: PMC9271161 DOI: 10.1073/pnas.2115939119] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022] Open
Abstract
Positive magnetoresistance (PMR) and negative magnetoresistance (NMR) describe two opposite responses of resistance induced by a magnetic field. Materials with giant PMR are usually distinct from those with giant NMR due to different physical natures. Here, we report the unusual photomagnetoresistance in the van der Waals heterojunctions of WSe2/quasi-two-dimensional electron gas, showing the coexistence of giant PMR and giant NMR. The PMR and NMR reach 1,007.5% at -9 T and -93.5% at 2.2 T in a single device, respectively. The magnetoresistance spans over two orders of magnitude on inversion of field direction, implying a giant unidirectional magnetoresistance (UMR). By adjusting the thickness of the WSe2 layer, we achieve the maxima of PMR and NMR, which are 4,900,000% and -99.8%, respectively. The unique magnetooptical transport shows the unity of giant UMR, PMR, and NMR, referred to as giant bipolar unidirectional photomagnetoresistance. These features originate from strong out-of-plane spin splitting, magnetic field-enhanced recombination of photocarriers, and the Zeeman effect through our experimental and theoretical investigations. This work offers directions for high-performance light-tunable spintronic devices.NMR).
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Lu Y, Shen R, Yu X, Yuan D, Zheng H, Yan Y, Liu C, Yang Z, Feng L, Li L, Lin S. Hot Carrier Transport and Carrier Multiplication Induced High Performance Vertical Graphene/Silicon Dynamic Diode Generator. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2200642. [PMID: 35607294 PMCID: PMC9313483 DOI: 10.1002/advs.202200642] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2022] [Revised: 04/25/2022] [Indexed: 05/08/2023]
Abstract
Dynamic semiconductor diode generators (DDGs) offer a potential portable and miniaturized energy source, with the advantages of high current density, low internal impedance, and independence of the rectification circuit. However, the output voltage of DDGs is generally as low as 0.1-1 V, owing to energy loss during carrier transport and inefficient carrier collection, which requires further optimization and a deeper understanding of semiconductor physical properties. Therefore, this study proposes a vertical graphene/silicon DDG to regulate the performance by realizing hot carrier transport and collection. With instant contact and separation of the graphene and silicon, hot carriers are generated by the rebounding process of built-in electric fields in dynamic graphene/silicon diodes, which can be collected within the ultralong hot electron lifetime of graphene. In particular, monolayer graphene/silicon DDG outputs a high voltage of 6.1 V as result of ultrafast carrier transport between the monolayer graphene and silicon. Furthermore, a high current of 235.6 nA is generated due to the carrier multiplication in graphene. A voltage of 17.5 V is achieved under series connection, indicating the potential to supply electronic systems through integration design. The graphene/silicon DDG has applications as an in situ energy source for harvesting mechanical energy from the environment.
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Affiliation(s)
- Yanghua Lu
- College of MicroelectronicsCollege of Information Science and Electronic EngineeringZhejiang UniversityHangzhou310027P. R. China
| | - Runjiang Shen
- College of MicroelectronicsCollege of Information Science and Electronic EngineeringZhejiang UniversityHangzhou310027P. R. China
| | - Xutao Yu
- College of MicroelectronicsCollege of Information Science and Electronic EngineeringZhejiang UniversityHangzhou310027P. R. China
| | - Deyi Yuan
- College of MicroelectronicsCollege of Information Science and Electronic EngineeringZhejiang UniversityHangzhou310027P. R. China
| | - Haonan Zheng
- College of MicroelectronicsCollege of Information Science and Electronic EngineeringZhejiang UniversityHangzhou310027P. R. China
| | - Yanfei Yan
- College of MicroelectronicsCollege of Information Science and Electronic EngineeringZhejiang UniversityHangzhou310027P. R. China
| | - Chang Liu
- College of MicroelectronicsCollege of Information Science and Electronic EngineeringZhejiang UniversityHangzhou310027P. R. China
| | - Zunshan Yang
- College of MicroelectronicsCollege of Information Science and Electronic EngineeringZhejiang UniversityHangzhou310027P. R. China
| | - Lixuan Feng
- College of MicroelectronicsCollege of Information Science and Electronic EngineeringZhejiang UniversityHangzhou310027P. R. China
| | - Linjun Li
- State Key Laboratory of Modern Optical InstrumentationZhejiang UniversityHangzhou310027P. R. China
| | - Shisheng Lin
- College of MicroelectronicsCollege of Information Science and Electronic EngineeringZhejiang UniversityHangzhou310027P. R. China
- State Key Laboratory of Modern Optical InstrumentationZhejiang UniversityHangzhou310027P. R. China
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Simulation of a New CZTS Solar Cell Model with ZnO/CdS Core-Shell Nanowires for High Efficiency. CRYSTALS 2022. [DOI: 10.3390/cryst12060772] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
Abstract
The numerical modeling of Cu2ZnSnS4 solar cells with ZnO/CdS core-shell nanowires of optimal dimensions with and without graphene is described in detail in this study. The COMSOL Simulation was used to determine the optimal values of core diameter and shell thickness by comparing their optical performance and to evaluate the optical and electrical properties of the different models. The deposition of a nanolayer of graphene on the layer of MoS2 made it possible to obtain a maximum absorption of 97.8% against 96.5% without the deposition of graphene.The difference between generation rates and between recombination rates of electron–hole pairs of models with and without graphene is explored.The electrical parameters obtained, such as the filling factor (FF), the short-circuit current density (Jsc), the open-circuit voltage (Voc), and the efficiency (EFF) are, respectively, 81.7%, 6.2 mA/cm2, 0.63 V, and 16.6% in the presence of graphene against 79.2%, 6.1 mA/cm2, 0.6 V, and 15.07% in the absence of graphene. The suggested results will be useful for future research work in the field of CZTS-based solar cells with ZnO/CdS core-shell nanowires with broadband light absorption rates.
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Pham VT, Fang TH. Understanding porosity and temperature induced variabilities in interface, mechanical characteristics and thermal conductivity of borophene membranes. Sci Rep 2021; 11:12123. [PMID: 34108570 PMCID: PMC8190318 DOI: 10.1038/s41598-021-91705-2] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/25/2021] [Accepted: 05/31/2021] [Indexed: 02/05/2023] Open
Abstract
Evaluating the effect of porosity and ambient temperature on mechanical characteristics and thermal conductivity is vital for practical application and fundamental material property. Here we report that ambient temperature and porosity greatly influence fracture behavior and material properties. With the existence of the pore, the most significant stresses will be concentrated around the pore position during the uniaxial and biaxial processes, making fracture easier to occur than when tensing the perfect sheet. Ultimate strength and Young's modulus degrade as porosity increases. The ultimate strength and Young's modulus in the zigzag direction is lower than the armchair one, proving that the borophene membrane has anisotropy characteristics. The deformation behavior of borophene sheets when stretching biaxial is more complicated and rough than that of uniaxial tension. In addition, the results show that the ultimate strength, failure strain, and Young's modulus degrade with growing temperature. Besides the tensile test, this paper also uses the non-equilibrium molecular dynamics (NEMD) approach to investigate the effects of length size, porosity, and temperature on the thermal conductivity (κ) of borophene membranes. The result points out that κ increases as the length increases. As the ambient temperature increases, κ decreases. Interestingly, the more porosity increases, the more κ decreases. Moreover, the results also show that the borophene membrane is anisotropic in heat transfer.
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Affiliation(s)
- Van-Trung Pham
- Department of Mechanical Engineering, National Kaohsiung University of Science and Technology, Kaohsiung, 807, Taiwan
- Department of Mechanical Engineering, Pham Van Dong University, Quang Ngai, 570000, Vietnam
| | - Te-Hua Fang
- Department of Mechanical Engineering, National Kaohsiung University of Science and Technology, Kaohsiung, 807, Taiwan.
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Morozov MY, Popov VV, Fateev DV. Electrically controllable active plasmonic directional coupler of terahertz signal based on a periodical dual grating gate graphene structure. Sci Rep 2021; 11:11431. [PMID: 34075117 PMCID: PMC8169778 DOI: 10.1038/s41598-021-90876-2] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/22/2021] [Accepted: 05/17/2021] [Indexed: 11/23/2022] Open
Abstract
We propose a concept of an electrically controllable plasmonic directional coupler of terahertz signal based on a periodical structure with an active (with inversion of the population of free charge carriers) graphene with a dual grating gate and numerically calculate its characteristics. Proposed concept of plasmon excitation by using the grating gate offers highly effective coupling of incident electromagnetic wave to plasmons as compared with the excitation of plasmons by a single diffraction element. The coefficient which characterizes the efficiency of transformation of the electromagnetic wave into the propagating plasmon has been calculated. This transformation coefficient substantially exceeds the unity (exceeding 6 in value) due to amplification of plasmons in the studied structure by using pumped active graphene. We have shown that applying different dc voltages to different subgratings of the dual grating gate allows for exciting the surface plasmon in graphene, which can propagate along or opposite the direction of the structure periodicity, or can be a standing plasma wave for the same frequency of the incident terahertz wave. The coefficient of unidirectionality, which is the ratio of the plasmon power flux propagating along (opposite) the direction of the structure periodicity to the sum of the absolute values of plasmon power fluxes propagating in both directions, could reach up to 80 percent. Two different methods of the plasmon propagation direction switching are studied and possible application of the found effects are suggested.
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Affiliation(s)
- Mikhail Yu Morozov
- Kotel'nikov Institute of Radio Engineering and Electronics (Saratov Branch), RAS, Saratov, Russia, 410019.
| | - Vyacheslav V Popov
- Kotel'nikov Institute of Radio Engineering and Electronics (Saratov Branch), RAS, Saratov, Russia, 410019
| | - Denis V Fateev
- Kotel'nikov Institute of Radio Engineering and Electronics (Saratov Branch), RAS, Saratov, Russia, 410019.,National Research Saratov State University, Saratov, Russia, 410012
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Shan J, Wang S, Zhou F, Cui L, Zhang Y, Liu Z. Enhancing the Heat-Dissipation Efficiency in Ultrasonic Transducers via Embedding Vertically Oriented Graphene-Based Porcelain Radiators. NANO LETTERS 2020; 20:5097-5105. [PMID: 32492341 DOI: 10.1021/acs.nanolett.0c01304] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Ultrasonic transducers with large output power have attracted extensive attentions due to their widespread applications in sonar, acoustic levitation, ultrasonic focusing, and so forth. However, the traditional transducer has almost no heat-dissipation capability itself, strictly relying on the assistant coolant system. Introducing high-performance heat-dissipation component is thus highly necessary. Herein, an embedded porcelain radiator component was designed by combining the excellent thermal conductivity of vertically oriented graphene (VG) with the outstanding heat-dissipation characteristics of thermosensitive ceramics, and a new-type transducer with an embedded VG/ceramic-hybrid radiator was constructed to show high heat-dissipation efficiency (up to ∼5 °C/min). Remarkably, prominent heat-dissipation effectiveness (temperature decline of ∼12 °C), enhanced amplitude and vibration uniformity were also achieved for the new-type transducer along with stabilized operating states. This research should pave ways for extending the applications of VG/ceramic hybrids to heat-dissipation scenarios and provide newfangled thoughts for the performance upgrade of multitudinous high-power devices.
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Affiliation(s)
- Junjie Shan
- Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P.R. China
- Beijing Graphene Institute (BGI), Beijing, 100095, P.R. China
| | - Sha Wang
- Shannxi Key Laboratory of Ultrasonics, Shannxi Normal University, Shaanxi 710119, P.R. China
| | - Fan Zhou
- Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P.R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P.R. China
| | - Lingzhi Cui
- Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P.R. China
| | - Yanfeng Zhang
- Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P.R. China
- Beijing Graphene Institute (BGI), Beijing, 100095, P.R. China
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P.R. China
- Beijing Graphene Institute (BGI), Beijing, 100095, P.R. China
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