Tuning the interfacial spin-orbit coupling with ferroelectricity

Experimental demonstration of tunable hybrid improper ferroelectricity in double-perovskite superlattice films

Hybrid improper ferroelectricity can effectively avoid the intrinsic chemical incompatibility of electronic mechanism for multiferroics. Perovskite superlattices, as theoretically proposed hybrid improper ferroelectrics with simple structure and high technological compatibility, are conducive to device integration and miniaturization, but the experimental realization remains elusive. Here, we report a strain-driven oxygen octahedral distortion strategy for hybrid improper ferroelectricity in La2NiMnO6/La2CoMnO6 double-perovskite superlattices. The epitaxial growth mode with mixed crystalline orientations maintains a large strain transfer distance more than 90 nm in the superlattice films with lattice mismatch less than 1%. Such epitaxial strain permits sustainable long-range modulation of oxygen octahedral rotation and tilting, thereby inducing and regulating hybrid improper ferroelectricity. A robust room-temperature ferroelectricity with remnant polarization of ~ 0.16 μC cm-2 and piezoelectric coefficient of 2.0 pm V-1 is obtained, and the density functional theory calculations and Landau-Ginsburg-Devonshire theory reveal the constitutive correlations between ferroelectricity, octahedral distortions, and strain. This work addresses the gap in experimental studies of hybrid improper ferroelectricity for perovskite superlattices and provides a promising research platform and idea for designing and exploring hybrid improper ferroelectricity.

Regulating Interfacial Spin Hall Conductivity with Ferroelectricity

We report a new physical phenomenon of active and enhanced control of the spin Hall conductivity (SHC) in a family of metal-ferroelectric multilayers. Rather than the direction of the built-in electric field, such ferroelectric regulation of SHC originates from the drastic change of the interfacial electronic state along with its intrinsic Berry phase near the Fermi level due to the distinct hybridization between the metal film and substrate when the ferroelectric polarization reverses. Using Pt/PbZrTiO₃ multilayers as a representative model, we demonstrate the controllability of a large magnitude and even the sign of SHC in the Pt film at the two interfaces with an antitype conducting carrier in a ferroelectric substrate. The interfacial Rashba effect plays a role in contributing to the change of SHC through spin-projected band analysis. The present work makes a fundamental theoretical discovery and opens up a new direction to manipulate spin-charge conversion of thin-film layered structures by ferroelectricity, which is crucial for designing future electric and spintronic devices.

Graphitic C2N3: An Allotrope of g-C3N4 Containing Active Azide Pentagons as Metal-Free Photocatalyst for Abundant H2 Bubble Evolution

A g-C₃N₄ allotrope, a curved leaf-like graphitic C₂N₃ (g-C₂N₃) with an intrinsic spontaneous polarization electric field (ISPEF), has been constructed for efficient solar energy conversion into H₂ energy via photocatalytic H₂O splitting. The curved leaf-like π-delocalization g-C₂N₃ was composed of aromatic azide pentagons and normal triazine hexagons obtained by cycloaddition between -C≡N groups from dicyandiamide polymerization and azide from the heat-treated polypyrrole fibers. Under light irradiation (λ > 420 nm), photo-generated charges are driven to separate efficiently and transfer from bulk to active sites of the surface under ISPEF that is opposite to the Coulomb field. Consequently, without any cocatalyst, g-C₃N₄ allotrope demonstrates a very high H₂-production activity of 14.9 mmol g^-1 h^-1 accompanied by a lot of H₂ bubbles, which is 2.6 times of g-C₃N₄ loading with Pt. In comparison with the reported metal-free photocatalysts or those supported with noble metals, g-C₃N₄ allotrope (i.e., leaf-like g-C₂N₃) is confirmed to be the best metal-free photocatalyst for H₂O splitting into H₂ fuel so far. The contructed leaf-like g-C₂N₃ with SPEF supplies a suitable platform for solar energy conversion into H₂ fuel, which actively contributes to clean energy production.

Prospect of Spin-Orbitronic Devices and Their Applications

Science, engineering, and medicine ultimately demand fast information processing with ultra-low power consumption. The recently developed spin-orbit torque (SOT)-induced magnetization switching paradigm has been fueling opportunities for spin-orbitronic devices, i.e., enabling SOT memory and logic devices at sub-nano second and sub-picojoule regimes. Importantly, spin-orbitronic devices are intrinsic of nonvolatility, anti-radiation, unlimited endurance, excellent stability, and CMOS compatibility, toward emerging applications, e.g., processing in-memory, neuromorphic computing, probabilistic computing, and 3D magnetic random access memory. Nevertheless, the cutting-edge SOT-based devices and application remain at a premature stage owing to the lack of scalable methodology on the field-free SOT switching. Moreover, spin-orbitronics poises as an interdisciplinary field to be driven by goals of both fundamental discoveries and application innovations, to open fascinating new paths for basic research and new line of technologies. In this perspective, the specific challenges and opportunities are summarized to exert momentum on both research and eventual applications of spin-orbitronic devices.