High-resolution patterning of colloidal quantum dots via non-destructive, light-driven ligand crosslinking

Direct Photopatterning of Colloidal Quantum Dots with Electronically Optimized Diazirine Cross-Linkers

Colloidal quantum dots (QDs) with a wide color gamut and high luminescent efficiency are promising for next-generation electronic and photonic devices. However, precise and scalable patterning of QDs without degrading their properties and their integration into commercially relevant devices, such as digitally addressable QD light-emitting diode (QLED) displays, remain challenging. Here, we develop electronically optimized diazirine-based cross-linkers for nondestructive, direct photopatterning of QDs and, ultimately, building the active-matrix QLED displays. The key to the cross-linker design is the introduction of electron-donating substituents that permit the formation of ground-state singlet carbenes for air-stable and benign QD photopatterning. Under ambient conditions, these cross-linkers enable the patterning of heavy metal-free QDs at a resolution of over 13,000 pixels per inch using commercial i-line photolithography. The patterned QD layers fully preserved their optical and optoelectronic properties. Pixelated electroluminescent devices with patterned InP/ZnSe/ZnS QD layers show a peak external quantum efficiency of 15.3% and a maximum luminance of about 40,000 cd m-2, outperforming those made by existing QD patterning approaches. We further show the seamless integration of patterned QLEDs with thin-film transistor circuits and the fabrication of dual-color active-matrix displays. These results underscore the importance of designing photochemistry for QD patterning, and promise the implementation of direct photopatterning methods in manufacturing commercial QLED displays and other integrated QD device platforms.

Continuous wave laser fabrication of small pitch/size perovskite pixels realizes high-resolution color conversion micro-LED displays

As a new generation of display technology, micro-light-emitting diodes (micro-LEDs) have been widely recognized owing to their excellent performance in brightness, contrast ratio, resolution, etc. This work proposes a continuous wave (CW) laser writing strategy to achieve perovskite quantum dots (PQDs) array with small pixel size and pitch, overcoming the processing difficulties and limitations of mass transfer. Since PQDs have highly dynamic surface ligand states and low ionic bond energy, suitable laser power can quench PQDs and form an array area. The use of low-power CW lasers in the laser direct writing process, on the one hand, greatly maintains the luminescence performance and edge flatness of each PQD array, and the pixel pitch (1.5 μm-9 μm)/size can be adjusted arbitrarily, which meets the high-resolution micro-display requirements. On the other hand, we found that after the low-power laser quenches the PQDs, its residual oxide can absorb photons, thus reducing the backlight leakage in color conversion micro-LEDs. Finally, red/green/blue three-color conversion micro-LED and laser projection displays were realized; these results provide a feasible strategy for next-generation micro-LED displays.

Crosslinkable Ligands for High-Density Photo-Patterning of Perovskite Nanocrystals

Perovskite nanocrystals (PNCs) are promising luminescent materials for electronic color displays due to their high luminescence efficiency, widely-tunable emission wavelengths, and narrow emission linewidth. Their application in emerging display technologies necessitates precise micron-scale patterning while maintaining good optical performance. Although photolithography is a well-established micro-patterning technique in the industry, conventional processes are incompatible with PNCs as the use of polar solvents can damage the ionic PNCs, causing severe luminescence quenching. Here, we report the rational design and synthesis of a new bidentate photo-crosslinkable ligand for the direct photo-patterning of PNCs. Each ligand contains two photosensitive acrylate groups and two carboxylate groups, and is introduced to the PNCs via an entropy-driven ligand exchange process. In a close-packed thin film, the acrylate ligands photo-polymerize and crosslink under ultraviolet light, rendering the PNCs insoluble in developing solvents. A high-density crosslinked PNC film with an optical density of 1.1 is attained at 1.4 µm thickness, surpassing industry requirements on the absorption coefficient. Micron-scale patterning is further demonstrated using direct laser writing, producing well-defined 20 µm features. This study thus offers an effective and versatile approach for micro-patterning PNCs, and may also be broadly applicable to other nanomaterial systems.

Ultrahigh-resolution, high-fidelity quantum dot pixels patterned by dielectric electrophoretic deposition

The high pixel resolution is emerging as one of the key parameters for the next-generation displays. Despite the development of various quantum dot (QD) patterning techniques, achieving ultrahigh-resolution (>10,000 pixels per inch (PPI)) and high-fidelity QD patterns is still a tough challenge that needs to be addressed urgently. Here, we propose a novel and effective approach of orthogonal electric field-induced template-assisted dielectric electrophoretic deposition to successfully achieve one of the highest pixel resolutions of 23090 (PPI) with a high fidelity of up to 99%. Meanwhile, the proposed strategy is compatible with the preparation of QD pixels based on perovskite CsPbBr3 and conventional CdSe QDs, exhibiting a wide applicability for QD pixel fabrication. Notably, we further demonstrate the great value of our approach to achieve efficiently electroluminescent QD pixels with a peak external quantum efficiency of 16.5%. Consequently, this work provides a general approach for realizing ultrahigh-resolution and high-fidelity patterns based on various QDs and a novel method for fabricating QD-patterned devices with high performance.

Single-Shot Multispectral Encoding: Advancing Optical Lithography for Encryption and Spectroscopy

Most modern optical display and sensing devices utilize a limited number of spectral units within the visible range, based on human color perception. In contrast, the rapid advancement of machine-based pattern recognition and spectral analysis could facilitate the use of multispectral functional units, yet the challenge of creating complex, high-definition, and reproducible patterns with an increasing number of spectral units limits their widespread application. Here, we report a technique for optical lithography that employs a single-shot exposure to reproduce perovskite films with spatially controlled optical band gaps through light-induced compositional modulations. Luminescent patterns are designed to program correlations between spatial and spectral information, covering the entire visible spectral range. Using this platform, we demonstrate multispectral encoding patterns for encryption and multivariate optical converters for dispersive optics-free spectroscopy with high spectral resolution. The fabrication process is conducted at room temperature and can be extended to other material and device platforms.

Direct Synthesis of Perovskite Quantum Dot Photoresist for Direct Photolithography

Perovskite quantum dots (PQDs) photoresists are promising building blocks for photolithographically patterned devices. However, their complex synthesis and combination processes limit their optical properties and potential patterning applications. Here, we present an exceptionally simple strategy for the synthesis of PQDs photoresist. Unlike traditional approaches that involve centrifugation, separation, and combination processes, our direct synthesis technique using polymerizable acrylic monomer as solvent to fabricate PQDs photoresists without complex post-synthesis process. We demonstrate that the change in solubility of the precursors is the main reason for the formation of PQDs in the polymerizable monomer. By direct photolithography, colorful PQD patterns with high photoluminescence quantum yields and high thickness are successfully demonstrated. This work opens a new avenue for the direct synthesis of PQDs photoresist, expanding their applications in various integrated applications, such as photonic, energy harvesting, and optoelectronic devices.

Esterification-Induced Spontaneous Deposition of Nanoparticle Monolayers on Substrates with Percolation Network Morphology

Nanoparticle monolayers (NPMLs) exhibit unique collective properties that are highly desirable for applications in sensors, catalysts, and optics. However, their practical use is often hindered by structural instability, especially when they are exposed to solvents. In this study, we developed a method for the spontaneous deposition of gold nanoparticle monolayers (AuNPMLs) on silicon substrates via covalent bonding interactions that provides excellent structural stability in solvents with varying polarities. The esterification reaction between carboxyl-functionalized gold nanoparticles and alkyl-chloride-functionalized silicon substrates spontaneously forms AuNPMLs on the substrate in which single-crystalline domains are interconnected, forming a percolation network morphology. The ex situ scanning electron microscopy measurements show that the surface coverage of AuNPMLs rapidly increases up to ca. 60% during the initial 10 min, followed by gradual growth and saturation at ca. 70% at 360 min of deposition time. On the other hand, the single-crystalline domain size reaches its maximum at 45 min and then gradually decreases, which may be attributed to the desorption of AuNPs by the hydrolysis of ester bonds. The reflectance spectra of AuNPMLs showed the red shift as the deposition time increases up to 45 min with a subsequent blue shift thereafter, which is consistent with the change of the single-crystalline domain size with the deposition time. The covalent bonding interaction-mediated nanoparticle deposition method can be used to form stable AuNPMLs with controlled surface coverage and domain size, allowing for fine control of the optical properties and possibly other properties. The excellent structural stability of AuNPMLs and their controlled properties may provide new opportunities for practical applications of NPMLs.

Monolithic Integration of Full-Color Microdisplay Screen with Sub-5 µm Quantum-Dot Pixels

Monolithic integration of color-conversion materials onto blue-backlight micro-light-emitting-diodes (micro-LEDs) has emerged as a promising strategy for achieving full-color microdisplay devices. However, this approach still encounters challenges such as the blue-backlight leakage and the poor fabrication yield rate due to unsatisfied quantum dot (QD) material and fabrication process. Here, the monolithic integration of 0.39-inch micro-display screens displaying colorful pictures and videos are demonstrated, which are enabled by creating interfacial chemical bonds for wafer-scale adhesion of sub-5 µm QD-pixels on blue-backlight micro-LED wafer. The ligand molecule with chlorosulfonyl and silane groups is selected as the synthesis ligand and surface treatment material, facilitating the preparation of high-efficiency QD photoresist and the formation of robust chemical bonds for pixel integration. This is a leading record in micro-display devices achieving the highest brightness larger than 400 thousand nits, the ultrahigh resolution of 3300 PPI, the wide color gamut of 130.4% NTSC, and the ultimate performance of service life exceeding 1000 h. These results extend the mature integrated circuit technique into the manufacture of micro-display device, which also lead the road of industrialization process of full-color micro-LEDs.

Recent Progress of Quantum Dots Light-Emitting Diodes: Materials, Device Structures, and Display Applications

Colloidal quantum dots (QDs), as a class of 0D semiconductor materials, have generated widespread interest due to their adjustable band gap, exceptional color purity, near-unity quantum yield, and solution-processability. With decades of dedicated research, the potential applications of quantum dots have garnered significant recognition in both the academic and industrial communities. Furthermore, the related quantum dot light-emitting diodes (QLEDs) stand out as one of the most promising contenders for the next-generation display technologies. Although QD-based color conversion films are applied to improve the color gamut of existing display technologies, the broader application of QLED devices remains in its nascent stages, facing many challenges on the path to commercialization. This review encapsulates the historical discovery and subsequent research advancements in QD materials and their synthesis methods. Additionally, the working mechanisms and architectural design of QLED prototype devices are discussed. Furthermore, the review surveys the latest advancements of QLED devices within the display industry. The narrative concludes with an examination of the challenges and perspectives of QLED technology in the foreseeable future.

Quantum Dot-Based Three-Stack Tandem Near-Infrared-to-Visible Optoelectric Upconversion Devices

Quantum dots (QDs) exhibit size-tunable optical properties, making them suitable for efficient light-sensing and light-emitting devices. Tandem devices that can convert near-infrared (NIR) to visible (Vis) signals can be fabricated by integrating an NIR-sensing QD device with a Vis electroluminescence (EL) QD device. However, these devices require delicate control of the QD layer during processing to prevent damage to the predeposited QD layers in tandem devices during the subsequent deposition of other functional layers. This has restricted attainable device structures for QD-based upconversion devices. Herein, we present a modular approach for fabricating QD-based optoelectric upconversion devices. This approach involves using NIR QD-absorbing (Abs) and Vis QD-EL units as building modules, both of which feature cross-linked functional layers that exhibit structural tolerance to dissolution during subsequent solution-based processes. Tandem devices are fabricated in both normal (EL unit on Abs unit) and inverted (Abs unit on EL unit) structures using the same set of NIR QD-Abs and Vis QD-EL units stacked in opposite sequences. The tandem device in the normal structure exhibits a high NIR photon-to-Vis-photon conversion efficiency of up to 1.9% in a practical transmissive mode. By extending our modular approach, we also demonstrate a three-stack tandem device that incorporates a single NIR-absorbing unit coupled with two EL units, achieving an even higher conversion efficiency of up to 3.2%.

Recent Progress on Quantum Dot Patterning Technologies for Commercialization of QD-LEDs: Current Status, Future Prospects, and Exploratory Approaches

Colloidal quantum dots (QDs) are widely regarded as advanced emissive materials with significant potential for display applications owing to their excellent optical properties such as high color purity, near-unity photoluminescence quantum yield, and size-tunable emission color. Building upon these attractive attributes, QDs have successfully garnered attention in the display market as down-conversion luminophores and now venturing into the realm of self-emissive displays, exemplified by QD light-emitting diodes (QD-LEDs). However, despite these advancements, there remains a relatively limited body of research on QD patterning technologies, which are crucial prerequisites for the successful commercialization of QD-LEDs. Thus, in this review, an overview of the current status and prospects of QD patterning technologies to accelerate the commercialization of QD-LEDs is provided. Within this review, a comprehensive investigation of three prevailing patterning methods: optical lithography, transfer printing, and inkjet printing are conducted. Furthermore, several exploratory QD patterning techniques that offer distinct advantages are introduced. This study not only paves the way for successful commercialization but also extends the potential application of QD-LEDs into uncharted frontiers.

Nondestructive Direct Patterning of Both Hole Transport and Emissive Layers for Pixelated Quantum-Dot Light-Emitting Diodes

Considering the increasing demand for high-resolution light-emitting diodes (LEDs), it is important that direct fine patterning technologies for LEDs be developed, especially for quantum-dot LEDs (QLEDs). Traditionally, the patterning of QLEDs relies on resin-based photolithography techniques, requiring multiple steps and causing performance deterioration. Nondestructive direct patterning may provide an easy and stepwise method to achieve fine-pixelated units in QLEDs. In this study, two isomeric tridentate cross-linkers (X8/X9) are presented and can be blended into the hole transport layer (HTL) and the emissive layer (EML) of QLEDs. Because of their photosensitivity, the in situ cross-linking process can be efficiently triggered by ultraviolet irradiation, affording high solvent resistance and nondestructive direct patterning of the layers. Red QLEDs using the cross-linked HTL demonstrate an impressive external quantum efficiency of up to 22.45%. Through lithographic patterning enabled by X9, line patterns of HTL and EML films exhibit widths as narrow as 2 and 4 μm, respectively. Leveraging the patterned HTL and EML, we show the successful fabrication of pixelated QLED devices with an area size of 3 × 3 mm2, alongside the successful production of dual-color pixelated QLED devices. These findings showcase the promising potential of direct patterning facilitated by engineered cross-linkers for the cost-effective fabrication of pixelated QLED displays.

Printable Light-Emitting Metasurfaces with Enhanced Directional Photoluminescence

Nanoimprint lithography is gaining popularity as a cost-efficient way to reproduce nanostructures in large quantities. Recent advances in nanoimprinting lithography using high-index nanoparticles have demonstrated replication of photonic devices, but it is difficult to confer special properties on nanostructures beyond general metasurfaces. Here, we introduce a novel method for fabricating light-emitting metasurfaces using nanoimprinting lithography. By utilizing quantum dots embedded in resin, we successfully imprint dielectric metasurfaces that function simultaneously as both emitters and resonators. This approach to incorporating quantum dots into metasurfaces demonstrates an improvement in photoluminescence characteristics compared to the situation where quantum dots and metasurfaces are independently incorporated. Design of the metasurface is specifically tailored to support photonic modes within the emission band of quantum dots with a large enhancement of photoluminescence. This study indicates that nanoimprinting lithography has the capability to construct nanostructures using functionalized nanoparticles and could be used in various fields of nanophotonic applications.

Recent Advances and Challenges of Colloidal Quantum Dot Light-Emitting Diodes for Display Applications

Colloidal quantum dots (QDs) exhibit tremendous potential in display technologies owing to their unique optical properties, such as size-tunable emission wavelength, narrow spectral linewidth, and near-unity photoluminescence quantum yield. Significant efforts in academia and industry have achieved dramatic improvements in the performance of quantum dot light-emitting diodes (QLEDs) over the past decade, primarily owing to the development of high-quality QDs and optimized device architectures. Moreover, sophisticated patterning processes have also been developed for QDs, which is an essential technique for their commercialization. As a result of these achievements, some QD-based display technologies, such as QD enhancement films and QD-organic light-emitting diodes, have been successfully commercialized, confirming the superiority of QDs in display technologies. However, despite these developments, the commercialization of QLEDs is yet to reach a threshold, requiring a leap forward in addressing challenges and related problems. Thus, representative research trends, progress, and challenges of QLEDs in the categories of material synthesis, device engineering, and fabrication method to specify the current status and development direction are reviewed. Furthermore, brief insights into the factors to be considered when conducting research on single-device QLEDs are provided to realize active matrix displays. This review guides the way toward the commercialization of QLEDs.

Nondestructive Direct Optical Patterning of Perovskite Nanocrystals with Carbene-Based Ligand Cross-Linkers

Microscale patterning of colloidal perovskite nanocrystals (NCs) is essential for their integration in advanced device platforms, such as high-definition displays. However, perovskite NCs usually show degraded optical and/or electrical properties after patterning with existing approaches, posing a critical challenge for their optoelectronic applications. Here we achieve nondestructive, direct optical patterning of perovskite NCs with rationally designed carbene-based cross-linkers and demonstrate their applications in high-performance light-emitting diodes. We reveal that both the photochemical properties and the electronic structures of cross-linkers need to be carefully tailored to the material properties of perovskite NCs. This method produces high-resolution (∼4000 ppi) NC patterns with preserved photoluminescent quantum efficiencies and charge transport properties. Prototype light-emitting diodes with patterned/cross-linked NC layers show a maximum luminance of over 60000 cd m-2 and a peak external quantum efficiency of 16%, among the highest for patterned perovskite electroluminescent devices. Such a material-adapted patterning method enabled by designs from a photochemistry perspective could foster the applications of perovskite NCs in system-level electronic and optoelectronic devices.

Flexible and Stretchable Light-Emitting Diodes and Photodetectors for Human-Centric Optoelectronics

Optoelectronic devices with unconventional form factors, such as flexible and stretchable light-emitting or photoresponsive devices, are core elements for the next-generation human-centric optoelectronics. For instance, these deformable devices can be utilized as closely fitted wearable sensors to acquire precise biosignals that are subsequently uploaded to the cloud for immediate examination and diagnosis, and also can be used for vision systems for human-interactive robotics. Their inception was propelled by breakthroughs in novel optoelectronic material technologies and device blueprinting methodologies, endowing flexibility and mechanical resilience to conventional rigid optoelectronic devices. This paper reviews the advancements in such soft optoelectronic device technologies, honing in on various materials, manufacturing techniques, and device design strategies. We will first highlight the general approaches for flexible and stretchable device fabrication, including the appropriate material selection for the substrate, electrodes, and insulation layers. We will then focus on the materials for flexible and stretchable light-emitting diodes, their device integration strategies, and representative application examples. Next, we will move on to the materials for flexible and stretchable photodetectors, highlighting the state-of-the-art materials and device fabrication methods, followed by their representative application examples. At the end, a brief summary will be given, and the potential challenges for further development of functional devices will be discussed as a conclusion.

Multi-Interfacial Confined Assembly of Colloidal Quantum Dots Quasisuperlattice Microcavities for High-Resolution Full-Color Microlaser Arrays

Colloidal quantum dots (CQDs) are considered a promising material for the next generation of integrated display devices due to their designable optical bandgap and low energy consumption. Owing to their dispersibility in solvents, CQD micro/nanostructures are generally fabricated by solution-processing methods. However, the random mass transfer in liquid restricts the programmable construction in macroscopy and ordered assembly in microscopy for the integration of CQD optical structures. Herein, a multi-interfacial confined assembly strategy is developed to fabricate CQDs programmable microstructure arrays with a quasisuperlattice configuration through controlling the dynamics of three-phase contact lines (TPCLs). The motion of TPCLs dominates the division of liquid film for precise positioning of CQD microstructures, while pinned TPCLs control the solvent evaporation and concentration gradient to directionally drive the mass transfer and packing of CQDs. Owing to their long-range order and adjustable structural dimensions, CQD microring arrays function as high-quality-factor (high-Q) lasing resonant cavities with low thresholds and tunable lasing emission modes. Through the further surface treatment and liquid dynamics control, the on-chip integration of red (R), green (G), and blue (B) multicomponent CQD microlaser arrays are demonstrated. The technique establishes a new route to fabricate large-area, ultrahigh-definition, and full-color CQD laser displays.

Synergistic Effect of Nano Strontium Titanate Coating and Ultraviolet C Photofunctionalization on Osteogenic Performance and Soft Tissue Sealing of poly(ether-ether-ketone)

This study aimed to evaluate the bioactivity of poly(ether ether ketone) (PEEK) after surface modification by persistent photoconductive strontium titanate (SrTiO3) magnetron sputtering and ultraviolet (UV) C irradiation. According to the different modifications, the PEEK specimens were randomly divided into five groups (n = 38/group): PEEK, Sr100-PEEK, Sr200-PEEK, UV/PEEK, and UV/Sr200-PEEK. Then, the specimens of Sr100-PEEK and Sr200-PEEK groups were, respectively, coated with 100 and 200 nm thickness photocatalyst SrTiO3 on the PEEK surface by magnetron sputtering. Subsequently, UV-C light photofunctionalized the specimens of PEEK and Sr200-PEEK groups to form UV/PEEK and UV/Sr200-PEEK groups. The specimens were characterized by a step meter, scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray spectroscopy (EDX), and a water contact angle meter. The release test of the Sr ion was performed by inductively coupled plasma mass spectrometry (ICP-MS). In vitro study, osteogenic activity (MC3T3-E1 osteoblast-like cells) and epithelial and connective tissue attachment (gingival epithelial cells GE1 and fibroblasts NIH3T3) were analyzed in five groups. Surface morphology of the specimens was changed after coating, and the Sr content on the Sr-PEEK surface was increased with increasing coating thickness. In addition, the contact angle was increased significantly after magnetron sputtering. After UV-C photofunctionalization, the content of surface elements changed and the contact angle was decreased. The release of Sr ion was sustained, and the final cumulative release amount did not exceed the safety limit. In vitro experiments showed that SrTiO3 improved the cell activity of MC3T3-E1 and UV-C irradiation further enhanced the osteogenic performance of PEEK. Besides, UV-C irradiation also significantly promoted the cell viability, development, and expression of adhesion proteins of GE1 and NIH3T3 on PEEK. The present investigation demonstrated that nano SrTiO3 coating with UV-C photofunctionalization synergistically enhanced the osteogenic properties and soft tissue sealing function of PEEK in vitro.

Network of Inorganic Nanocrystals Can Swell: Study of Swelling-Induced Surface Instability

A unique organic-inorganic hybrid network composed of inorganic nanocores (ranging from semiconductors to metallic ones) interconnected through organic molecules can be produced by crosslinking the organic ligands of colloidal inorganic nanocrystals in assemblies. This work reports that this network, which is conventionally considered an inorganic film, can swell when exposed to a solvent because of the interaction between the solvent and the organic linkage within the network. Intriguingly, this work discovers that drying the solvent of the swollen organic-inorganic hybrid network can significantly affect the morphology owing to the swelling-induced compress stress, which is widely observed in various organic network systems. This work studies the surface instability of crosslinked organic-inorganic hybrid networks swollen by various organic solvents, which led to buckling delamination. Specifically, this work investigates the effects of the i) solvent-network interaction, ii) crosslinking density of the network, and iii) thickness of the film on the delamination behavior of the crosslinked network.

Color Revolution: Prospects and Challenges of Quantum-Dot Light-Emitting Diode Display Technologies

Light-emitting diodes (LEDs) based on colloidal quantum-dots (QDs) such as CdSe, InP, and ZnSeTe feature a unique advantage of narrow emission linewidth of ≈20 nm, which can produce highly accurate colors, making them a highly promising technology for the realization of displays with Rec. 2020 color gamut. With the rapid development in the past decades, the performances of red and green QLEDs have been remarkably improved, and their efficiency and lifetime can almost meet industrial requirements. However, the industrialization of QLED displays still faces many challenges; for example, (1) the device mechanisms including the charge injection/transport/leakage, exciton quenching, and device degradation are still unclear, which fundamentally limit QLED performance improvement; (2) the blue performances including the efficiency, chromaticity, and stability are relatively low, which are still far from the requirements of practical applications; (3) the color patterning processes including the ink-jet printing, transfer printing, and photolithography are still immature, which restrict the manufacturing of high resolution full-color QLED displays. Here, the recent advancements attempting to address the above challenges of QLED displays are specifically reviewed. After a brief overview of QLED development history, device structure/principle, and performances, the main focus is to investigate the recent discoveries on device mechanisms with an emphasis on device degradation. Then recent progress is introduced in blue QLEDs and color patterning. Finally, the opportunities, challenges, solutions, and future research directions of QLED displays are summarized.

Top-Emitting Quantum Dot Light-Emitting Diodes: Theory, Optimization, and Application

The superior optical properties of colloidal quantum dots (QDs) have garnered significant broad interest from academia and industry owing to their successful application in self-emitting QD-based light-emitting diodes (QLEDs). In particular, active research is being conducted on QLEDs with top-emission device architectures (TQLEDs) owing to their advantages such as easy integration with conventional backplanes, high color purity, and excellent light extraction. However, due to the complicated optical phenomena and their highly sensitive optoelectrical properties to experimental variations, TQLEDs cannot be optimized easily for practical use. This review summarizes previous studies that have investigated top-emitting device structures and discusses ways to advance the performance of TQLEDs. First, theories relevant to the optoelectrical properties of TQLEDs are introduced. Second, advancements in device optimization are presented, where the underlying theories for each are considered. Finally, multilateral strategies for TQLEDs to enable their wider application to advanced industries are discussed. This work believes that this review can provide valuable insights for realizing commercial TQLEDs applicable to a broad range of applications.

Ligand-Nondestructive Direct Photolithography Assisted by Semiconductor Polymer Cross-Linking for High-Resolution Quantum Dot Light-Emitting Diodes

The photolithographic patterning of fine quantum dot (QD) films is of great significance for the construction of QD optoelectronic device arrays. However, the photolithography methods reported so far either introduce insulating photoresist or manipulate the surface ligands of QDs, each of which has negative effects on device performance. Here, we report a direct photolithography strategy without photoresist and without engineering the QD surface ligands. Through cross-linking of the surrounding semiconductor polymer, QDs are spatially confined to the network frame of the polymer to form high-quality patterns. More importantly, the wrapped polymer incidentally regulates the energy levels of the emitting layer, which is conducive to improving the hole injection capacity while weakening the electron injection level, to achieve balanced injection of carriers. The patterned QD light-emitting diodes (with a pixel size of 1.5 μm) achieve a high external quantum efficiency of 16.25% and a brightness of >1.4 × 105 cd/m2. This work paves the way for efficient high-resolution QD light-emitting devices.

Green Solvent Selection for All Solution-Processed Inverted Quantum Dot Light Emitting Diode

Quantum-dot light-emitting diodes (QD-LEDs) have gained attention as potential display technologies. However, the solvents used to dissolve a polymeric hole transport layer (HTL) are hazardous to both humans and the environment. Additionally, intermixing the HTL and QD layers presents a significant challenge when fabricating inverted QD-LEDs. Here, a green solvent selection procedure to achieve good device performance and environmental safety in QD-LEDs is established. This procedure utilizes Hansen solubility parameters and surface roughness to identify a set of solvents that do not lower the device performance by avoiding interlayer mixing or a rough interface. The CHEM21 solvent selection guide is used to screen for environmentally hazardous solvents. Finally, cyclopentanone (CPO) is selected as the optimal HTL solvent from among 16 candidates. Using CPO improves the maximum luminescence by ≈1.6 times and the maximum current efficiency by ≈12.6 times, compared to that of conventional devices using hazardous chlorobenzene. Solvent selection is critical for the fabrication of green and high-performance inverted QD-LEDs, particularly for large display panels that require n-type oxide thin-film transistors.

Wafer-scale patterning of high-resolution quantum dot films with a thickness over 10 μm for improved color conversion

Quantum dots (QDs) are promising color conversion materials for efficient full-color micro light-emitting diode (micro-LED) displays owing to their high color purity and wide color gamut. However, achieving high-resolution QD patterns with enough thickness for efficient color conversion is challenging. Here, we demonstrate a facile and compatible approach by combining replicate molding, plasma etching and transfer printing to produce QD patterns with a sufficient thickness over ten micrometers in a wide range of resolutions. Our technique can remarkably simplify the preparation of QD inks and minimize optical damage to QD materials. The pixel resolution and thickness of QD patterns can be controlled by well-defining the microstructures of the molding template and the etching process. The transfer printing process allows QD patterns to be assembled sequentially onto a receiving substrate, which will further improve the original pixel resolution and avoid repetitive optical damage to QDs during the patterning process. Consequently, various QD patterns can be fabricated in this work, including perovskite quantum dot (PQD) patterns with a pixel resolution of up to 669 pixels per inch (ppi) and a maximum thickness of up to 19.74 μm, a wafer-scale high-resolution PQD pattern with sufficient thickness on a flexible substrate, and a dual-color pattern comprising green PQDs and red CdSe QDs. Furthermore, these fabricated QD films with a thickness of over 10 μm show improved color conversion when integrated onto a blue micro-LED, revealing the potential of our technique for full-color micro-LED displays.

Technological Breakthroughs in Chip Fabrication, Transfer, and Color Conversion for High-Performance Micro-LED Displays

The implementation of high-efficiency and high-resolution displays has been the focus of considerable research interest. Recently, micro light-emitting diodes (micro-LEDs), which are inorganic light-emitting diodes of size <100 µm2 , have emerged as a promising display technology owing to their superior features and advantages over other displays like liquid crystal displays and organic light-emitting diodes. Although many companies have introduced micro-LED displays since 2012, obstacles to mass production still exist. Three major challenges, i.e., low quantum efficiency, time-consuming transfer, and complex color conversion, have been overcome with technological breakthroughs to realize cost-effective micro-LED displays. In the review, methods for improving the degraded quantum efficiency of GaN-based micro-LEDs induced by the size effect are examined, including wet chemical treatment, passivation layer adoption, LED structure design, and growing LEDs in self-passivated structures. Novel transfer technologies, including pick-up transfer and self-assembly methods, for developing large-area micro-LED displays with high yield and reliability are discussed in depth. Quantum dots as color conversion materials for high color purity, and deposition methods such as electrohydrodynamic jet printing or contact printing on micro-LEDs are also addressed. This review presents current status and critical challenges of micro-LED technology and promising technical breakthroughs for commercialization of high-performance displays.

Patterning Quantum Dots via Photolithography: A Review

Pixelating patterns of red, green, and blue quantum dots (QDs) is a critical challenge for realizing high-end displays with bright and vivid images for virtual, augmented, and mixed reality. Since QDs must be processed from a solution, their patterning process is completely different from the conventional techniques used in the organic light-emitting diode and liquid crystal display industries. Although innovative QD patterning technologies are being developed, photopatterning based on the light-induced chemical conversion of QD films is considered one of the most promising methods for forming micrometer-scale QD patterns that satisfy the precision and fidelity required for commercialization. Moreover, the practical impact will be significant as it directly exploits mature photolithography technologies and facilities that are widely available in the semiconductor industry. This article reviews recent progress in the effort to form QD patterns via photolithography. The review begins with a general description of the photolithography process. Subsequently, different types of photolithographical methods applicable to QD patterning are introduced, followed by recent achievements using these methods in forming high-resolution QD patterns. The paper also discusses prospects for future research directions.

Stimuli-Responsive Surface Ligands for Direct Lithography of Functional Inorganic Nanomaterials

ConspectusColloidal nanocrystals (NCs) have emerged as a diverse class of materials with tunable composition, size, shape, and surface chemistry. From their facile syntheses to unique optoelectronic properties, these solution-processed nanomaterials are a promising alternative to materials grown as bulk crystals or by vapor-phase methods. However, the integration of colloidal nanomaterials in real-world devices is held back by challenges in making patterned NC films with the resolution, throughput, and cost demanded by device components and applications. Therefore, suitable approaches to pattern NCs need to be established to aid the transition from individual proof-of-concept NC devices to integrated and multiplexed technological systems.In this Account, we discuss the development of stimuli-sensitive surface ligands that enable NCs to be patterned directly with good pattern fidelity while retaining desirable properties. We focus on rationally selected ligands that enable changes in the NC dispersibility by responding to light, electron beam, and/or heat. First, we summarize the fundamental forces between colloidal NCs and discuss the principles behind NC stabilization/destabilization. These principles are applied to understanding the mechanisms of the NC dispersibility change upon stimuli-induced ligand modifications. Six ligand-based patterning mechanisms are introduced: ligand cross-linking, ligand decomposition, ligand desorption, in situ ligand exchange, ion/ligand binding, and ligand-aided increase of ionic strength. We discuss examples of stimuli-sensitive ligands that fall under each mechanism, including their chemical transformations, and address how these ligands are used to pattern either sterically or electrostatically stabilized colloidal NCs. Following that, we explain the rationale behind the exploration of different types of stimuli, as well as the advantages and disadvantages of each stimulus.We then discuss relevant figures-of-merit that should be considered when choosing a particular ligand chemistry or stimulus for patterning NCs. These figures-of-merit pertain to either the pattern quality (e.g., resolution, edge and surface roughness, layer thickness), or to the NC material quality (e.g., photo/electro-luminescence, electrical conductivity, inorganic fraction). We outline the importance of these properties and provide insights on optimizing them. Both the pattern quality and NC quality impact the performance of patterned NC devices such as field-effect transistors, light-emitting diodes, color-conversion pixels, photodetectors, and diffractive optical elements. We also give examples of proof-of-concept patterned NC devices and evaluate their performance. Finally, we provide an outlook on further expanding the chemistry of stimuli-sensitive ligands, improving the NC pattern quality, progress toward 3D printing, and other potential research directions. Ultimately, we hope that the development of a patterning toolbox for NCs will expedite their implementation in a broad range of applications.

Ligand-Crosslinking Strategy for Efficient Quantum Dot Light-Emitting Diodes via Thiol-Ene Click Chemistry

While solution-processable colloidal quantum dots (QDs) offer cost-effective and large-scale manufacturing, they can be susceptible to subsequent solution processes, making continuous processing challenging. To enable complex and integrated device architectures, robust QD films with subsequent patterning are necessary. Here, we report a facile ligand-crosslinking strategy based on thiol-ene click chemistry. Thiol molecules added to QD films react with UV light to form radicals that crosslink with QD ligands containing carbon double bonds, enabling microscale photo-patterning of QD films and enhancing their solvent resistance. This strategy can also be extended to other ligand-capped nanocrystals. It is found that the swelling of QD films during the process of binding with the thiol molecules placed between the ligands contributes to the improvement of photoluminescence and electroluminescence properties. These results suggest that the thiol-ene crosslinking modifies the optoelectronic properties and enables direct optical patterning, expanding the potential applications of QDs.

Direct photocatalytic patterning of colloidal emissive nanomaterials

We present a universal direct photocatalytic patterning method that can completely preserve the optical properties of perovskite nanocrystals (PeNCs) and other emissive nanomaterials. Solubility change of PeNCs is achieved mainly by a photoinduced thiol-ene click reaction between specially tailored surface ligands and a dual-role photocatalytic reagent, pentaerythritol tetrakis(3-mercaptopropionate) (PTMP), where the thiol-ene reaction is enabled at a low light intensity dose (~ 30 millijoules per square centimeter) by the strong photocatalytic activity of PeNCs. The photochemical reaction mechanism was investigated using various analyses at each patterning step. The PTMP also acts as a defect passivation agent for the PeNCs and even enhances their photoluminescence quantum yield (by ~5%) and photostability. Multicolor patterns of cesium lead halide (CsPbX3)PeNCs were fabricated with high resolution (<1 micrometer). Our method is widely applicable to other classes of nanomaterials including colloidal cadmium selenide-based and indium phosphide-based quantum dots and light-emitting polymers; this generality provides a nondestructive and simple way to pattern various functional materials and devices.

Flexible Quantum Dot Light-Emitting Device for Emerging Multifunctional and Smart Applications

Quantum dot light-emitting diodes (QLEDs), owing to their exceptional performances in device efficiency, color purity/tunability in the visible region and solution-processing ability on various substrates, become a potential candidate for flexible and ultrathin electroluminescent (EL) lighting and display. Moreover, beyond the lighting and display, flexible QLEDs are enabled with endless possibilities in the era of the internet of things and artificial intelligence by acting as input/output ports in wearable integrated systems. Challenges remain in the development of flexible QLEDs with the goals for high performance, excellent flexibility/even stretchability, and emerging applications. In this paper, the recent developments of QLEDs including quantum dot materials, working mechanism, flexible/stretchable strategies and patterning strategies, and highlight its emerging multifunctional integrations and smart applications covering wearable optical medical devices, pressure-sensing EL devices, and neural smart EL devices, are reviewed. The remaining challenges are also summarized and an outlook on the future development of flexible QLEDs made. The review is expected to offer a systematic understanding and valuable inspiration for flexible QLEDs to simultaneously satisfy optoelectronic and flexible properties for emerging applications.

High-Resolution, Highly Transparent, and Efficient Quantum Dot Light-Emitting Diodes

Aiming at next-generation displays, high-resolution quantum dot light-emitting diodes (QLEDs) with high efficiency and transparency are highly desired. However, there is limited study involving the improvements of QLED pixel resolution, efficiency, and transparency simultaneously, which undoubtedly restricts the practical applications of QLED for next-generation displays. Here, the strategy of electrostatic force-induced deposition (EF-ID) is proposed by introducing alternating polyethyleneimine (PEI) and fluorosilane patterns to synergistically improve the pixel accuracy and transmittance of QD patterns. More importantly, the leakage current induced by the void spaces between pixels that is usually reported for high-resolution QLEDs is greatly suppressed by substrate-assisted insulating fluorosilane patterns. Finally, high-performance QLEDs with high resolution ranging from 1104 to 3031 pixels per inch (PPI) and a high efficiency of 15.6% are achieved, among the best performances of high resolution QLEDs. Notably, the high resolution QD pixels greatly enhance the transmittance of the QD patterns, thus prompting an impressive transmittance of 90.7% for the transparent QLEDs (2116 PPI), which represents the highest transmittance of transparent QLED devices. Consequently, this work contributes an effective and general approach for high-resolution QLEDs with high efficiency and transparency.

Colloidal Quantum Dot Nanolithography: Direct Patterning via Electron Beam Lithography

Micro/nano patterns based on quantum dots (QDs) are of great interest for applications ranging from electronics to photonics to sensing devices for biomedical purposes. Several patterning methods have been developed, but all lack the precision and reproducibility required to fabricate precise, complex patterns of less than one micrometer in size, or require specialized crosslinking ligands, limiting their application. In this study, we present a novel approach to directly pattern QD nanopatterns by electron beam lithography using commercially available colloidal QDs without additional modifications. We have successfully generated reliable dot and line QD patterns with dimensions as small as 140 nm. In addition, we have shown that using a 10 nm SiO₂ spacer layer on a 50 nm Au layer substrate can double the fluorescence intensity compared to QDs on the Au layer without SiO₂. This method takes advantage of traditional nanolithography without the need for a resist layer.

Physically defined long-term and short-term synapses for the development of reconfigurable analog-type operators capable of performing health care tasks

Extracting valuable information from the overflowing data is a critical yet challenging task. Dealing with high volumes of biometric data, which are often unstructured, nonstatic, and ambiguous, requires extensive computer resources and data specialists. Emerging neuromorphic computing technologies that mimic the data processing properties of biological neural networks offer a promising solution for handling overflowing data. Here, the development of an electrolyte-gated organic transistor featuring a selective transition from short-term to long-term plasticity of the biological synapse is presented. The memory behaviors of the synaptic device were precisely modulated by restricting ion penetration through an organic channel via photochemical reactions of the cross-linking molecules. Furthermore, the applicability of the memory-controlled synaptic device was verified by constructing a reconfigurable synaptic logic gate for implementing a medical algorithm without further weight-update process. Last, the presented neuromorphic device demonstrated feasibility to handle biometric information with various update periods and perform health care tasks.

Direct Optical Patterning of Quantum Dots: One Strategy, Different Chemical Processes

Patterning, stability, and dispersion of the semiconductor quantum dots (scQDs) are three issues strictly interconnected for successful device manufacturing. Recently, several authors adopted direct optical patterning (DOP) as a step forward in photolithography to position the scQDs in a selected area. However, the chemistry behind the stability, dispersion, and patterning has to be carefully integrated to obtain a functional commercial device. This review describes different chemical strategies suitable to stabilize the scQDs both at a single level and as an ensemble. Special attention is paid to those strategies compatible with direct optical patterning (DOP). With the same purpose, the scQDs' dispersion in a matrix was described in terms of the scQD surface ligands' interactions with the matrix itself. The chemical processes behind the DOP are illustrated and discussed for five different approaches, all together considering stability, dispersion, and the patterning itself of the scQDs.

Indolocarbazole-Based Photo-Crosslinkable Hole-Transporting Layer for Efficient Solution-Processed Organic Light-Emitting Diodes

We designed and synthesized a new indolocarbazole-based polymer, poly(N,N-diphenyl(5,11-dihexylindolo[3,2,1-jk]carbazol-2-yl)amine) (PICA), for solution-processed organic light-emitting diodes (OLEDs). The highest occupied and lowest unoccupied molecular orbital energy levels of this polymer, -5.25 and -2.46 eV, respectively, are suitable for hole transport from the anode to the emissive layer. PICA was photo-crosslinked by UV irradiation with ethane-1,2-diyl bis(4-azido-2,3,5,6-tetrafluorobenzoate) (FPA) as the photoinitiator. Successful crosslinking was confirmed by a decreased intensity in the azide-stretching FT-IR peak and solvent test with toluene (a suitable solvent for PICA). The PICA film photo-crosslinked with 3 wt% FPA showed enhanced solvent resistance (90%) compared to the non-crosslinked neat PICA film (<20%). Moreover, OLED devices using PICA-based hole-transporting layers exhibited better device performance (EQE/LE/PE: 8.88%/12.97/8.12 in red devices, 10.84%/38.47 cd/A/25.06 lm/W in green devices) than those using poly-TPD:FPA. We demonstrated that the photo-crosslinked PICA can be applied as a hole-transporting layer in solution-processed OLEDs.

Microfluidic static droplet generated quantum dot arrays as color conversion layers for full-color micro-LED displays

This paper presents an easy and intact process based on microfluidics static droplet array (SDA) technology to fabricate quantum dot (QD) arrays for full-color micro-LED displays. A minimal sub-pixel size of 20 μm was achieved, and the fluorescence-converted red and green arrays provide good light uniformity of 98.58% and 98.72%, respectively.

Femtosecond laser regulatory focus ablation patterning of a fluorescent film up to 1/10 of the scale of the diffraction limit

Patterned quantum dots (QDs) and perovskites have attracted a great deal of attention in the fabrication of optoelectronic device arrays for transistors, image sensors and displays. However, the resolution of current patterning technologies is insufficient for nanopatterned QDs and perovskites to be integrated in advanced optoelectronic and photonic applications. Herein, we demonstrate a femtosecond laser regulatory focus ablation (FsLRFA) patterning technique of a fluorescent film involving both semiconductor core-shell QDs and perovskite up to 1/10th of the scale of the diffraction limit. Annular lines with a 200 nm-width are obtained after the irradiation of the femtosecond laser. Moreover, the combination of ablated different geometries enables the laser focal spot as brushes for FsLRFA patterning technology to fabricate delicate and programmable patterns on the fluorescent film. This technology with nanoscale resolution and patterning capability paves the road toward highly integrated applications based on QDs and perovskites.

Direct Photo-Patterning of Efficient and Stable Quantum Dot Light-Emitting Diodes via Light-Triggered, Carbocation-Enabled Ligand Stripping

Next generation displays based on quantum dot light-emitting diodes (QLEDs) require robust patterning methods for quantum dot layers. However, existing patterning methods mostly yield QLEDs with performance far inferior to the state-of-the-art individual devices. Here, we report a light-triggered, carbocation-enabled ligand stripping (CELS) approach to pattern QLEDs with high efficiency and stability. During CELS, photogenerated carbocations from triphenylmethyl chlorides remove native ligands of quantum dots, thereby producing patterns at microscale precision. Chloride anions passivate surface defects and endow patterned quantum dots with preserved photoluminescent quantum yields. It works for both cadmium-based and heavy-metal-free quantum dots. CELS-patterned QLEDs show remarkable external quantum efficiencies (19.1%, 17.5%, 12.0% for red, green, blue, respectively) and a long operation lifetime (T₉₅ at 1000 nits up to 8700 h). Both are among the highest for patterned QLEDs and approach the records for nonpatterned devices, which makes CELS promising for building high-performance QLED displays and related integrated devices.

Ultrahigh-resolution quantum dot patterning for advanced optoelectronic devices

Quantum dots have attracted significant scientific interest owing to their optoelectronic properties, which are distinct from their bulk counterparts. In order to fully utilize quantum dots for next generation devices with advanced functionalities, it is important to fabricate quantum dot colloids into dry patterns with desired feature sizes and shapes with respect to target applications. In this review, recent progress in ultrahigh-resolution quantum dot patterning technologies will be discussed, with emphasis on the characteristic advantages as well as the limitations of diverse technologies. This will provide guidelines for selecting suitable tools to handle quantum dot colloids throughout the fabrication of quantum dot based solid-state devices. Additionally, epitaxially fabricated single-particle level quantum dot arrays are discussed. These are extreme in terms of pattern resolution, and expand the potential application of quantum dots to quantum information processing.

Femtosecond Laser Ablation of Quantum Dot Films toward Physical Unclonable Multilevel Fluorescent Anticounterfeiting Labels

Femtosecond laser ablation (FsLA) technology has been demonstrated to achieve programmable ablation and removal of diverse materials with high precision. Owing to the cross-scale and digital processing characteristics, the FsLA technology has attracted increasing interest. However, the moderate repeatability of FsLA limits its application in the fabrication of advanced micro-/nanostructures due to the nonidentity of each laser pulse and fluctuation of environment. Fortunately, moderate repeatability combined with programmable ablation and high precision perfectly matches with the technical requirements of a physical unclonable fluorescent anticounterfeiting label. Herein, we applied FsLA to quantum dot (QD) films to fabricate a physical unclonable multilevel fluorescent anticounterfeiting label. Visual Jilin University logos, quick response (QR) codes, microlines, and microholes have been achieved for the multilevel anticounterfeiting functions. Of particular significance, the microholes with a macroidentical and microidentifiable geometry guarantee the physical unclonable functions (PUFs). Moreover, the fluorescent anticounterfeiting label is compatible with deep learning algorithms that facilitate authentication to be convenient and accurate. This work shows a fantastic future potential to be a core anticounterfeiting technique for commercial products and drugs.

Surface passivation of intensely luminescent all-inorganic nanocrystals and their direct optical patterning

All-inorganic nanocrystals (NCs) are of great importance in a range of electronic devices. However, current all-inorganic NCs suffer from limitations in their optical properties, such as low fluorescence efficiencies. Here, we develop a general surface treatment strategy to obtain intensely luminescent all-inorganic NCs (ILANs) by using designed metal salts with noncoordinating anions that play a dual role in the surface treatment process: (i) removing the original organic ligands and (ii) binding to unpassivated Lewis basic sites to preserve the photoluminescent (PL) properties of the NCs. The absolute photoluminescence quantum yields (PLQYs) of red-emitting CdSe/ZnS NCs, green-emitting CdSe/CdZnSeS/ZnS NCs and blue-emitting CdZnS/ZnS NCs in polar solvents are 97%, 80% and 72%, respectively. Further study reveals that the passivated Lewis basic sites of ILANs by metal cations boost the efficiency of radiative recombination of electron-hole pairs. While the passivation of Lewis basic sites leads to a high PLQY of ILANs, the exposed Lewis acidic sites provide the possibility for in situ tuning of the functions of NCs, creating opportunities for direct optical patterning of functional NCs with high resolution.

Progress in the Development of Active-Matrix Quantum-Dot Light-Emitting Diodes Driven by Non-Si Thin-Film Transistors

This paper aims to discuss the key accomplishments and further prospects of active-matrix (AM) quantum-dot (QD) light-emitting diodes (QLEDs) display. We present an overview and state-of-the-art of QLEDs as a frontplane and non-Si-based thin-film transistors (TFTs) as a backplane to meet the requirements for the next-generation displays, such as flexibility, transparency, low power consumption, fast response, high efficiency, and operational reliability. After a brief introduction, we first review the research on non-Si-based TFTs using metal oxides, transition metal dichalcogenides, and semiconducting carbon nanotubes as the driving unit of display devices. Next, QLED technologies are analyzed in terms of the device structure, device engineering, and QD patterning technique to realize high-performance, full-color AM-QLEDs. Lastly, recent research on the monolithic integration of TFT-QLED is examined, which proposes a new perspective on the integrated device. We anticipate that this review will help the readership understand the fundamentals, current state, and issues on TFTs and QLEDs for future AM-QLED displays.

Direct Optical Lithography Enabled Multispectral Colloidal Quantum-Dot Imagers from Ultraviolet to Short-Wave Infrared

Complementary metal oxide semiconductor (CMOS) silicon sensors play a central role in optoelectronics with widespread applications from small cell phone cameras to large-format imagers for remote sensing. Despite numerous advantages, their sensing ranges are limited within the visible (0.4-0.7 μm) and near-infrared (0.8-1.1 μm) range , defined by their energy gaps (1.1 eV). However, below or above that spectral range, ultraviolet (UV) and short-wave infrared (SWIR) have been demonstrated in numerous applications such as fingerprint identification, night vision, and composition analysis. In this work, we demonstrate the implementation of multispectral broad-band CMOS-compatible imagers with UV-enhanced visible pixels and SWIR pixels by layer-by-layer direct optical lithography of colloidal quantum dots (CQDs). High-resolution single-color images and merged multispectral images were obtained by using one imager. The photoresponse nonuniformity (PRNU) is below 5% with a 0% dead pixel rate and room-temperature responsivities of 0.25 A/W at 300 nm, 0.4 A/W at 750 nm, and 0.25 A/W at 2.0 μm.

Freestanding High-Resolution Quantum Dot Color Converters with Small Pixel Sizes

Designing the next generation of high-resolution displays requires high pixel density per area and small pixel sizes without compromising the optical quality. Quantum dots (QDs) have been demonstrated as a promising material system for down-conversion of blue emission as they provide pure colors on the wide color gamut. However, for high color-conversion efficiency, the required QD film thickness has not been compatible with small pixel sizes. In this work, we develop a new type of freestanding QD-based color converter for efficient optical down-conversion from inorganic blue light-emitting diodes (LEDs) in a color-by-blue configuration. CdSe/ZnS core-shell QDs in a UV-curable polymer matrix are encapsulated within cavities formed by patterning and bonding a pair of patterned quartz substrates. By controlling the required QD thickness and the pixel size independently, we demonstrate freestanding monochrome red and green converters with small pixel sizes down to 5 × 5 μm² and a high resolution of >3600 ppi. The optical studies show that the QD film thickness required for efficient color conversion can be successfully realized even for the small pixel sizes. We further combine green and red pixels in a single converter to achieve white emission when combined with blue LED emission. The QD color converter design and processing are decoupled from the LED fabrication and can be easily scaled to wafer-size integration with arbitrary pixel sizes for QD-based RGB displays with ultrahigh resolution.

Ultrahigh-resolution full-color perovskite nanocrystal patterning for ultrathin skin-attachable displays

High-definition red/green/blue (RGB) pixels and deformable form factors are essential for the next-generation advanced displays. Here, we present ultrahigh-resolution full-color perovskite nanocrystal (PeNC) patterning for ultrathin wearable displays. Double-layer transfer printing of the PeNC and organic charge transport layers is developed, which prevents internal cracking of the PeNC film during the transfer printing process. This results in RGB pixelated PeNC patterns of 2550 pixels per inch (PPI) and monochromic patterns of 33,000 line pairs per inch with 100% transfer yield. The perovskite light-emitting diodes (PeLEDs) with transfer-printed active layers exhibit outstanding electroluminescence characteristics with remarkable external quantum efficiencies (15.3, 14.8, and 2.5% for red, green, and blue, respectively), which are high compared to the printed PeLEDs reported to date. Furthermore, double-layer transfer printing enables the fabrication of ultrathin multicolor PeLEDs that can operate on curvilinear surfaces, including human skin, under various mechanical deformations. These results highlight that PeLEDs are promising for high-definition full-color wearable displays.

Noninvasive and Direct Patterning of High-Resolution Full-Color Quantum Dot Arrays by Programmed Microwetting

Although the commercialization of electroluminescent quantum-dot (QD) displays essentially demands multicolor patterning of QDs with sufficient scalability and uniformity, the implementation of QD patterning in a light-emitting diode device is highly challenging, mainly due to the innate vulnerability of QDs and charge-transport layers. Here, we introduce a noninvasive surface-wetting approach for patterning full-color QD arrays on a photoprogrammed hole-transport layer (HTL). To achieve noninvasiveness of QD patterning, surface-specific modification of HTLs was performed without degrading their performance. Moreover, engineering the solvent evaporation kinetics allows area-selective wetting of QD patterns with a uniform thickness profile. Finally, multicolor QD patterning was enabled by preventing cross-contamination between different QD colloids via partial fluoro-encapsulation of earlier-patterned QDs. Throughout the overall QD patterning process, the optoelectronic properties of QDs and hole-transport layers are well preserved, and prototype electroluminescent quantum dot light-emitting diode arrays with high current efficiency and brightness were realized.

Ligand-Free Direct Optical Lithography of Bare Colloidal Nanocrystals via Photo-Oxidation of Surface Ions with Porosity Control

Microscale patterning of colloidal nanocrystal (NC) films is important for their integration in devices. Here, we introduce the direct optical patterning of all-inorganic NCs without the use of additional photosensitive ligands or additives. We determined that photoexposure of ligand-stripped, "bare" NCs in air significantly reduces their solubility in polar solvents due to photo-oxidation of surface ions. Doses as low as 20 mJ/cm² could be used; the only obvious criterion for material selection is that the NCs need to have significant absorption at the irradiation wavelength. However, transparent NCs can still be patterned by mixing them with suitably absorbing NCs. This approach enabled the patterning of bare ZnSe, CdSe, ZnS, InP, CeO₂, CdSe/CdS, and CdSe/ZnS NCs as well as mixtures of ZrO₂ or HfO₂ NCs with ZnSe NCs. Optical, X-ray photoelectron, and infrared spectroscopies show that solubility loss results from desorption of bound solvent due to photo-oxidation of surface ions. We also demonstrate two approaches, compatible with our patterning method, for modulating the porosity and refractive index of NC films. Block copolymer templating decreases the film density, and thus the refractive index, by introducing mesoporosity. Alternatively, hot isostatic pressing increases the packing density and refractive index of NC layers. For example, the packing fraction of a ZnS NC film can be increased from 0.51 to 0.87 upon hot isostatic pressing at 450 °C and 15 000 psi. Our findings demonstrate that direct lithography by photo-oxidation of bare NC surfaces is an accessible patterning method for facilitating the exploration of more complex NC device architectures while eliminating the influence of bulky or insulating surfactants.

Ink-lithographic fabrication of silver-nanocrystal-based multiaxial strain gauge sensors through the coffee-ring effect for voice recognition applications

Human voice recognition techniques have remarkable potential for clinical applications because information from acoustic signals can reflect human body conditions. This paper reports the fabrication of Ag nanocrystal (NC)-based multiaxial wearable strain gauge sensors by ink-lithography for voice recognition systems. Benefiting from the one-step-device-fabrication strategy of ink-lithography, which can yield Ag NC patterns with specific dimensions and endow physical properties, the Ag NC-based multiaxial strain sensors can be fabricated on an ultrathin substrate (~ 6 μm). Additionally, the coffee-ring effect can be induced onto the Ag NC patterns to realize high sensitivity and angle dependence (gauge factors [Formula: see text] = 11.7 ± 1.2 and [Formula: see text] = 105.5 ± 20.1); moreover, the voice onset time for voice recognition can be detected by the sensors. These features assist in distinguishing between voiced and voiceless plosive contrasts via measurements of contact-based voice onset time differences and can act as a cornerstone for further advancements in wearable sensors as well as voice recognition and analysis.

Direct Patterning of Colloidal Nanocrystals via Thermally Activated Ligand Chemistry

Precise patterning with microscale lateral resolution and widely tunable heights is critical for integrating colloidal nanocrystals into advanced optoelectronic and photonic platforms. However, patterning nanocrystal layers with thickness above 100 nm remains challenging for both conventional and emerging direct photopatterning methods, due to limited light penetration depths, complex mechanical and chemical incompatibilities, and others. Here, we introduce a direct patterning method based on a thermal mechanism, namely, the thermally activated ligand chemistry (or TALC) of nanocrystals. The ligand cross-linking or decomposition reactions readily occur under local thermal stimuli triggered by near-infrared lasers, affording high-resolution and nondestructive patterning of various nanocrystals under mild conditions. Patterned quantum dots fully preserve their structural and photoluminescent quantum yields. The thermal nature allows for TALC to pattern over 10 μm thick nanocrystal layers in a single step, far beyond those achievable in other direct patterning techniques, and also supports the concept of 2.5D patterning. The thermal chemistry-mediated TALC creates more possibilities in integrating nanocrystal layers in uniform arrays or complex hierarchical formats for advanced capabilities in light emission, conversion, and modulation.

Generalised optical printing of photocurable metal chalcogenides

Optical three-dimensional (3D) printing techniques have attracted tremendous attention owing to their applicability to mask-less additive manufacturing, which enables the cost-effective and straightforward creation of patterned architectures. However, despite their potential use as alternatives to traditional lithography, the printable materials obtained from these methods are strictly limited to photocurable resins, thereby restricting the functionality of the printed objects and their application areas. Herein, we report a generalised direct optical printing technique to obtain functional metal chalcogenides via digital light processing. We developed universally applicable photocurable chalcogenidometallate inks that could be directly used to create 2D patterns or micrometre-thick 2.5D architectures of various sizes and shapes. Our process is applicable to a diverse range of functional metal chalcogenides for compound semiconductors and 2D transition-metal dichalcogenides. We then demonstrated the feasibility of our technique by fabricating and evaluating a micro-scale thermoelectric generator bearing tens of patterned semiconductors. Our approach shows potential for simple and cost-effective architecturing of functional inorganic materials.

Optical 3D printing techniques are low-cost mask-less patterning methods, but their application is limited by the number of printable materials. Here, the authors report a generalized optical method to print 2D or micrometre-thick 2.5D architectures based on metal chalcogenides inks, showing the realization of micro-scale thermoelectric generators.