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Vertical organic electrochemical transistors for complementary circuits. Nature 2023; 613:496-502. [PMID: 36653571 PMCID: PMC9849123 DOI: 10.1038/s41586-022-05592-2] [Citation(s) in RCA: 35] [Impact Index Per Article: 35.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/05/2021] [Accepted: 11/24/2022] [Indexed: 01/19/2023]
Abstract
Organic electrochemical transistors (OECTs) and OECT-based circuitry offer great potential in bioelectronics, wearable electronics and artificial neuromorphic electronics because of their exceptionally low driving voltages (<1 V), low power consumption (<1 µW), high transconductances (>10 mS) and biocompatibility1-5. However, the successful realization of critical complementary logic OECTs is currently limited by temporal and/or operational instability, slow redox processes and/or switching, incompatibility with high-density monolithic integration and inferior n-type OECT performance6-8. Here we demonstrate p- and n-type vertical OECTs with balanced and ultra-high performance by blending redox-active semiconducting polymers with a redox-inactive photocurable and/or photopatternable polymer to form an ion-permeable semiconducting channel, implemented in a simple, scalable vertical architecture that has a dense, impermeable top contact. Footprint current densities exceeding 1 kA cm-2 at less than ±0.7 V, transconductances of 0.2-0.4 S, short transient times of less than 1 ms and ultra-stable switching (>50,000 cycles) are achieved in, to our knowledge, the first vertically stacked complementary vertical OECT logic circuits. This architecture opens many possibilities for fundamental studies of organic semiconductor redox chemistry and physics in nanoscopically confined spaces, without macroscopic electrolyte contact, as well as wearable and implantable device applications.
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2
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Li Z, Ma D, Xu F, Dan T, Gong Z, Shao J, Zhao YS, Yao J, Zhong Y. Selective, Anisotropic, or Consistent Polarized‐Photon Out‐Coupling of 2D Organic Microcrystals. Angew Chem Int Ed Engl 2022; 61:e202205033. [DOI: 10.1002/anie.202205033] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/05/2022] [Indexed: 11/06/2022]
Affiliation(s)
- Zhong‐Qiu Li
- Key Laboratory of Photochemistry Beijing National Laboratory for Molecular Sciences CAS Research/Education Center for Excellence in Molecular Sciences Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China
- School of Chemical Sciences University of Chinese Academy of Sciences Beijing 100049 China
| | - Dian‐Xue Ma
- Key Laboratory of Photochemistry Beijing National Laboratory for Molecular Sciences CAS Research/Education Center for Excellence in Molecular Sciences Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China
- School of Chemical Sciences University of Chinese Academy of Sciences Beijing 100049 China
| | - Fa‐Feng Xu
- Key Laboratory of Photochemistry Beijing National Laboratory for Molecular Sciences CAS Research/Education Center for Excellence in Molecular Sciences Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China
| | - Ti‐Xiong Dan
- Key Laboratory of Photochemistry Beijing National Laboratory for Molecular Sciences CAS Research/Education Center for Excellence in Molecular Sciences Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China
- School of Chemical Sciences University of Chinese Academy of Sciences Beijing 100049 China
| | - Zhong‐Liang Gong
- Key Laboratory of Photochemistry Beijing National Laboratory for Molecular Sciences CAS Research/Education Center for Excellence in Molecular Sciences Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China
| | - Jiang‐Yang Shao
- Key Laboratory of Photochemistry Beijing National Laboratory for Molecular Sciences CAS Research/Education Center for Excellence in Molecular Sciences Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China
| | - Yong Sheng Zhao
- Key Laboratory of Photochemistry Beijing National Laboratory for Molecular Sciences CAS Research/Education Center for Excellence in Molecular Sciences Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China
- School of Chemical Sciences University of Chinese Academy of Sciences Beijing 100049 China
| | - Jiannian Yao
- Key Laboratory of Photochemistry Beijing National Laboratory for Molecular Sciences CAS Research/Education Center for Excellence in Molecular Sciences Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China
- School of Chemical Sciences University of Chinese Academy of Sciences Beijing 100049 China
| | - Yu‐Wu Zhong
- Key Laboratory of Photochemistry Beijing National Laboratory for Molecular Sciences CAS Research/Education Center for Excellence in Molecular Sciences Institute of Chemistry Chinese Academy of Sciences Beijing 100190 China
- School of Chemical Sciences University of Chinese Academy of Sciences Beijing 100049 China
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3
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Memristive FHN Spiking Neuron Model and Brain-Inspired Threshold Logic Computing. Neurocomputing 2022. [DOI: 10.1016/j.neucom.2022.08.056] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2022]
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Höppner M, Kheradmand‐Boroujeni B, Vahland J, Sawatzki MF, Kneppe D, Ellinger F, Kleemann H. High-Frequency Operation of Vertical Organic Field-Effect Transistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2201660. [PMID: 35754312 PMCID: PMC9403633 DOI: 10.1002/advs.202201660] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/22/2022] [Revised: 05/12/2022] [Indexed: 06/15/2023]
Abstract
The high-frequency and low-voltage operation of organic thin-film transistors (OTFTs) is a key requirement for the commercial success of flexible electronics. Significant progress has been achieved in this regard by several research groups highlighting the potential of OTFTs to operate at several tens or even above 100 MHz. However, technology maturity, including scalability, integrability, and device reliability, is another crucial point for the semiconductor industry to bring OTFT-based flexible electronics into mass production. These requirements are often not met by high-frequency OTFTs reported in the literature as unconventional processes, such as shadow-mask patterning or alignment with unrealistic tolerances for production, are used. Here, ultra-short channel vertical organic field-effect transistors (VOFETs) with a unity current gain cut-off frequency (fT ) up to 43.2 MHz (or 4.4 MHz V-1 ) operating below 10 V are shown. Using state-of-the-art manufacturing techniques such as photolithography with reliable fabrication procedures, the integration of such devices down to the size of only 12 × 6 µm2 is shown, which is important for the adaption of this technology in high-density circuits (e.g., display driving). The intrinsic channel transconductance is analyzed and demonstrates that the frequencies up to 430 MHz can be reached if the parasitic electrode overlap is minimized.
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Affiliation(s)
- Marco Höppner
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP)Technische Universität Dresden01069DresdenGermany
| | - Bahman Kheradmand‐Boroujeni
- Chair of Circuit Design and Network Theory (CCN)Technische Universität DresdenHelmholtz Str. 1801069DresdenGermany
- Center for Advancing Electronics Dresden (cfaed)Technische Universität DresdenWürzburgerstr. 4601187DresdenGermany
| | - Jörn Vahland
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP)Technische Universität Dresden01069DresdenGermany
| | - Michael Franz Sawatzki
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP)Technische Universität Dresden01069DresdenGermany
| | - David Kneppe
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP)Technische Universität Dresden01069DresdenGermany
| | - Frank Ellinger
- Chair of Circuit Design and Network Theory (CCN)Technische Universität DresdenHelmholtz Str. 1801069DresdenGermany
- Center for Advancing Electronics Dresden (cfaed)Technische Universität DresdenWürzburgerstr. 4601187DresdenGermany
| | - Hans Kleemann
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP)Technische Universität Dresden01069DresdenGermany
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Wang SJ, Sawatzki M, Darbandy G, Talnack F, Vahland J, Malfois M, Kloes A, Mannsfeld S, Kleemann H, Leo K. Organic bipolar transistors. Nature 2022; 606:700-705. [PMID: 35732763 PMCID: PMC9217747 DOI: 10.1038/s41586-022-04837-4] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/09/2021] [Accepted: 05/05/2022] [Indexed: 11/09/2022]
Abstract
Devices made using thin-film semiconductors have attracted much interest recently owing to new application possibilities. Among materials systems suitable for thin-film electronics, organic semiconductors are of particular interest; their low cost, biocompatible carbon-based materials and deposition by simple techniques such as evaporation or printing enable organic semiconductor devices to be used for ubiquitous electronics, such as those used on or in the human body or on clothing and packages1–3. The potential of organic electronics can be leveraged only if the performance of organic transistors is improved markedly. Here we present organic bipolar transistors with outstanding device performance: a previously undescribed vertical architecture and highly crystalline organic rubrene thin films yield devices with high differential amplification (more than 100) and superior high-frequency performance over conventional devices. These bipolar transistors also give insight into the minority carrier diffusion length—a key parameter in organic semiconductors. Our results open the door to new device concepts of high-performance organic electronics with ever faster switching speeds. An organic bipolar junction transistor composed of highly crystalline rubrene thin films has a device architecture that could be used in organic electronics with greatly improved high-frequency performance
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Affiliation(s)
- Shu-Jen Wang
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Dresden, Germany
| | - Michael Sawatzki
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Dresden, Germany
| | - Ghader Darbandy
- NanoP, Technische Hochschule Mittelhessen, University of Applied Science, Gießen, Germany
| | - Felix Talnack
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Dresden, Germany
| | - Jörn Vahland
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Dresden, Germany
| | | | - Alexander Kloes
- NanoP, Technische Hochschule Mittelhessen, University of Applied Science, Gießen, Germany
| | - Stefan Mannsfeld
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Dresden, Germany
| | - Hans Kleemann
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Dresden, Germany
| | - Karl Leo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Dresden, Germany. .,Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Dresden, Germany.
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Li ZQ, Ma DX, Xu FF, Dan TX, Gong ZL, Shao JY, Zhao YS, Yao J, Zhong YW. Selective, Anisotropic, or Consistent Polarized‐Photon Out‐Coupling of 2D Organic Microcrystals. Angew Chem Int Ed Engl 2022. [DOI: 10.1002/ange.202205033] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Zhong-Qiu Li
- Institute of Chemistry Chinese Academy of Sciences Laboratory of Photochemistry CHINA
| | - Dian-Xue Ma
- Institute of Chemistry Chinese Academy of Sciences Laboratory of Photochemistry CHINA
| | - Fa-Feng Xu
- Institute of Chemistry Chinese Academy of Sciences Laboratory of Photochemistry CHINA
| | - Ti-Xiong Dan
- Institute of Chemistry Chinese Academy of Sciences Laboratory of Photochemistry CHINA
| | - Zhong-Liang Gong
- Institute of Chemistry Chinese Academy of Sciences Laboratory of Photochemistry CHINA
| | - Jiang-Yang Shao
- Institute of Chemistry Chinese Academy of Sciences Laboratory of Photochemistry CHINA
| | - Yong Sheng Zhao
- Institute of Chemistry Chinese Academy of Sciences Laboratory of Photochemistry CHINA
| | - Jiannian Yao
- Institute of Chemistry Chinese Academy of Sciences Laboratory of Photochemistry CHINA
| | - Yu-Wu Zhong
- Chinese Academy of Sciences Institute of Chemistry 2 Bei Yi Jie, Zhong Guan Cun 100190 Beijing CHINA
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Zhao L, Gong M, Yang J, Gu J. Switchable Ionic Transportation in the Nanochannels of the MOFs Triggered by Light and pH. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2021; 37:13952-13960. [PMID: 34788532 DOI: 10.1021/acs.langmuir.1c02579] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The construction of a biomimetic ionic channel is of great significance for the fabrication of smart biodevices or logic circuit. Inspired by the selective permeability of the cell membrane toward bioions, a light-induced and pH-modulated artificial nanochannel is herein prepared by integrating the multistimuli-response molecule of carboxylated spiropyran (SP-COOH) into the frameworks of NU-1000 (Zr-based MOFs defined by Northwestern University). The loading density of the SP-COOH could reach as high as 7 wt % while keeping unchanged crystallinity and high porosity. Thanks to the precise matching of pore size of NU-1000 and molecular dimensions of SP-COOH, the loaded molecules could proceed free and reversible for isomerization between the hydrophilic and hydrophobic states. The ion-switchable characteristics of the channel are implemented by the amphiphilic change of the light-controlled gate molecule. Additionally, in the hydrophilic state, the channel presents reversible affinity toward cations or anions due to the reverse charge state induced by pH, thus constructing a pH-controlled subgate. Taking [Ru(NH3)6]3+ and [Fe(NH3)]3- as the model cation and anion, their redox peak currents occur as reversible change under different signal combinations of light and pH. Moreover, in accordance with the ionic selective permeability, several logic circuits/devices are designed to display the relationships between exogenous stimuli and ionic transportations in a computer language, prefiguring their wide application prospects in electronic devices and life sciences.
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Affiliation(s)
- Liwei Zhao
- Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China
| | - Ming Gong
- Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China
- Fujian Key Laboratory of Architectural Coating, Skshu Paint Co., Ltd., Putian, Fujian 351100, China
| | - Jian Yang
- Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China
| | - Jinlou Gu
- Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China
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Triet Ho LT, Mukherjee A, Vasileska D, Akis J, Stavro J, Zhao W, Goldan AH. Modeling Dark Current Conduction Mechanisms and Mitigation Techniques in Vertically Stacked Amorphous Selenium-Based Photodetectors. ACS APPLIED ELECTRONIC MATERIALS 2021; 3:3538-3546. [PMID: 35600494 PMCID: PMC9119575 DOI: 10.1021/acsaelm.1c00444] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Amorphous selenium (a-Se) with its single-carrier and non-Markovian, hole impact ionization process can revolutionize low-light detection and emerge to be a solid-state replacement to the vacuum photomultiplier tube (PMT). Although a-Se-based solid-state avalanche detectors can ideally provide gains comparable to PMTs, their development has been severely limited by the irreversible breakdown of inefficient hole blocking layers (HBLs). Thus, understanding of the transport characteristics and ways to control electrical hot spots and, thereby, the breakdown voltage is key to improving the performance of avalanche a-Se devices. Simulations using Atlas, SILVACO, were employed to identify relevant conduction mechanisms in a-Se-based detectors: space-charge-limited current, bulk thermal generation, Schottky emission, Poole-Frenkel activated mobility, and hopping conduction. Simulation parameters were obtained from experimental data and first-principle calculations. The theoretical models were validated by comparing them with experimental steady-state dark current densities in avalanche and nonavalanche a-Se detectors. To maintain bulk thermal generation-limited dark current levels in a-Se detectors, a high-permittivity noninsulating material is required to substantially decrease the electric field at the electrode/hole blocking layer interface, thus preventing injection from the high-voltage electrode. This, in turn, prevents Joule heating from crystallizing the a-Se layer, consequently avoiding early dielectric breakdown of the device.
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Affiliation(s)
- Le Thanh Triet Ho
- Department of Electrical Engineering, College of Engineering and Applied Sciences, Stony Brook University, Stony Brook, New York 11794, United States
| | - Atreyo Mukherjee
- Department of Electrical Engineering, College of Engineering and Applied Sciences, Stony Brook University, Stony Brook, New York 11794, United States
| | - Dragica Vasileska
- School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, United States
| | - John Akis
- Department of Radiology, Renaissance School of Medicine, Stony Brook University, Stony Brook, New York 11794, United States
| | - Jann Stavro
- Department of Radiology, Renaissance School of Medicine, Stony Brook University, Stony Brook, New York 11794, United States
| | - Wei Zhao
- Department of Radiology, Renaissance School of Medicine, Stony Brook University, Stony Brook, New York 11794, United States
| | - Amir H Goldan
- Department of Radiology, Renaissance School of Medicine, Stony Brook University, Stony Brook, New York 11794, United States
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Wu Z, Liu Y, Guo E, Darbandy G, Wang SJ, Hübner R, Kloes A, Kleemann H, Leo K. Efficient and low-voltage vertical organic permeable base light-emitting transistors. NATURE MATERIALS 2021; 20:1007-1014. [PMID: 33649562 DOI: 10.1038/s41563-021-00937-0] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2020] [Accepted: 01/18/2021] [Indexed: 06/12/2023]
Abstract
Organic light-emitting transistors, three-terminal devices combining a thin-film transistor with a light-emitting diode, have generated increasing interest in organic electronics. However, increasing their efficiency while keeping the operating voltage low still remains a key challenge. Here, we demonstrate organic permeable base light-emitting transistors; these three-terminal vertical optoelectronic devices operate at driving voltages below 5.0 V; emit in the red, green and blue ranges; and reach, respectively, peak external quantum efficiencies of 19.6%, 24.6% and 11.8%, current efficiencies of 20.6 cd A-1, 90.1 cd A-1 and 27.1 cd A-1 and maximum luminance values of 9,833 cd m-2, 12,513 cd m-2 and 4,753 cd m-2. Our simulations demonstrate that the nano-pore permeable base electrode located at the centre of the device, which forms a distinctive optical microcavity and regulates charge carrier injection and transport, is the key to the good performance obtained. Our work paves the way towards efficient and low-voltage organic light-emitting transistors, useful for power-efficient active matrix displays and solid-state lighting.
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Affiliation(s)
- Zhongbin Wu
- Frontiers Science Center for Flexible Electronics, Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, China.
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Dresden, Germany.
| | - Yuan Liu
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Dresden, Germany
- Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science and Technology University, Beijing, China
| | - Erjuan Guo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Dresden, Germany
| | - Ghader Darbandy
- NanoP, TH Mittelhessen, University of Applied Sciences, Giessen, Germany
| | - Shu-Jen Wang
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Dresden, Germany
| | - René Hübner
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany
| | - Alexander Kloes
- NanoP, TH Mittelhessen, University of Applied Sciences, Giessen, Germany
| | - Hans Kleemann
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Dresden, Germany
| | - Karl Leo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Dresden, Germany
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