1
|
Liu Y, Xu Y, Fert A, Jaffrès HY, Nie T, Eimer S, Zhang X, Zhao W. Efficient Orbitronic Terahertz Emission Based on CoPt Alloy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2404174. [PMID: 38896111 DOI: 10.1002/adma.202404174] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2024] [Revised: 06/17/2024] [Indexed: 06/21/2024]
Abstract
Orbitronic devices operate by manipulating orbitally polarized currents. Recent studies have shown that these orbital currents can be excited by femtosecond laser pulses in a ferromagnet such as Ni and converted into ultrafast charge currents via orbital-to-charge conversion. However, the terahertz emission from orbitronic terahertz emitters based on Ni is still much weaker than that of the typical spintronic terahertz emitter. Here, this work reports a more efficient light-induced generation of orbital current from a CoPt alloy, and the terahertz emission from CoPt/Cu/MgO is comparable to that of benchmark spintronic terahertz emitters. By varying the composition of the CoPt alloy, the thickness of Cu, and the capping layer, this work confirms that THz emission primarily originates from the orbital accumulation generated within CoPt, propagating through Cu, followed by subsequent orbital-to-charge conversion due to the inverse orbital Rashba-Edelstein effect at the Cu/MgO interface. This study provides strong evidence for the efficient orbital current generation in CoPt alloy, paving the way for efficient orbital terahertz emitters.
Collapse
Affiliation(s)
- Yongshan Liu
- National Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
- Hefei Innovation Research Institute, Beihang University, Hefei, 230013, China
| | - Yong Xu
- National Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
| | - Albert Fert
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, Palaiseau, 91767, France
| | - Henri-Yves Jaffrès
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, Palaiseau, 91767, France
| | - Tianxiao Nie
- Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
| | - Sylvain Eimer
- National Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
| | - Xiaoqiang Zhang
- Hefei Innovation Research Institute, Beihang University, Hefei, 230013, China
| | - Weisheng Zhao
- National Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
- Hefei Innovation Research Institute, Beihang University, Hefei, 230013, China
| |
Collapse
|
2
|
Yang C, Huang Y, Pei K, Long X, Yang L, Luo Y, Lai Y, Zhang J, Cao G, Che R. Current-Controllable and Reversible Multi-Resistance-State Based on Domain Wall Number Transition in 2D Ferromagnet Fe 3GeTe 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311831. [PMID: 38253422 DOI: 10.1002/adma.202311831] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/08/2023] [Revised: 01/15/2024] [Indexed: 01/24/2024]
Abstract
Controlling the multi-state switching is significantly essential for the extensive utilization of 2D ferromagnet in magnetic racetrack memories, topological devices, and neuromorphic computing devices. The development of all-electric functional nanodevices with multi-state switching and a rapid reset remains challenging. Herein, to imitate the potentiation and depression process of biological synapses, a full-current strategy is unprecedently established by the controllable resistance-state switching originating from the spin configuration rearrangement by domain wall number modulation in Fe3GeTe2. In particular, a strong correlation is uncovered in the reduction of domain wall number with the corresponding resistance decreasing by in-situ Lorentz transmission electron microscopy. Interestingly, the magnetic state is reversed instantly to the multi-domain wall state under a single pulse current with a higher amplitude, attributed to the rapid thermal demagnetization by simulation. Based on the neuromorphic computing system with full-current-driven artificial Fe3GeTe2 synapses with multi-state switching, a high accuracy of ≈91% is achieved in the handwriting image recognition pattern. The results identify 2D ferromagnet as an intriguing candidate for future advanced neuromorphic spintronics.
Collapse
Affiliation(s)
- Chendi Yang
- Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Academy for Engineering & Technology, Fudan University, Shanghai, 200438, China
| | - Yalei Huang
- Materials Genome Institute, Shanghai University, Shanghai, 200444, China
| | - Ke Pei
- Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Academy for Engineering & Technology, Fudan University, Shanghai, 200438, China
| | - Xiumin Long
- Materials Genome Institute, Shanghai University, Shanghai, 200444, China
| | - Liting Yang
- Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Academy for Engineering & Technology, Fudan University, Shanghai, 200438, China
| | - Yongming Luo
- School of Electronics and Information Engineering, Hangzhou Dianzi University, Hangzhou, 310018, China
| | - Yuxiang Lai
- Pico Electron Microscopy Center, Innovation Institute for Ocean Materials Characterization, Center for Advanced Studies in Precision Instruments, Hainan University, Haikou, 570228, China
| | | | - Guixin Cao
- Materials Genome Institute, Shanghai University, Shanghai, 200444, China
- Zhejiang Laboratory, Hangzhou, 311100, China
| | - Renchao Che
- Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Academy for Engineering & Technology, Fudan University, Shanghai, 200438, China
- Zhejiang Laboratory, Hangzhou, 311100, China
| |
Collapse
|
3
|
Zhu L. Switching of Perpendicular Magnetization by Spin-Orbit Torque. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300853. [PMID: 37004142 DOI: 10.1002/adma.202300853] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/28/2023] [Revised: 03/16/2023] [Indexed: 06/19/2023]
Abstract
Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical switching of such perpendicular magnetization in an energy-efficient, deterministic, scalable manner has remained a big challenge. This problem has recently attracted enormous efforts in the field of spintronics. Here, recent advances and challenges in the understanding of the electrical generation of spin currents, the switching mechanisms and the switching strategies of perpendicular magnetization, the switching current density by spin-orbit torque of transverse spins, the choice of perpendicular magnetic materials are reviewed, and the progress in prototype perpendicular SOT memory and logic devices toward the goal of energy-efficient, dense, fast perpendicular spin-orbit torque applications is summarized.
Collapse
Affiliation(s)
- Lijun Zhu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| |
Collapse
|
4
|
Li S, Lin X, Li P, Zhao S, Si Z, Wei G, Koopmans B, Lavrijsen R, Zhao W. Ultralow Power and Shifting-Discretized Magnetic Racetrack Memory Device Driven by Chirality Switching and Spin Current. ACS APPLIED MATERIALS & INTERFACES 2023; 15:39946-39955. [PMID: 37581258 DOI: 10.1021/acsami.3c06447] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/16/2023]
Abstract
Magnetic racetrack memory has significantly evolved and developed since its first experimental verification and is considered one of the most promising candidates for future high-density on-chip solid-state memory. However, both the lack of a fast and precise magnetic domain wall (DW) shifting mechanism and the required extremely high DW motion (DWM) driving current make the racetrack difficult to commercialize. Here, we propose a method for coherent DWM that is free from the above issues, which is driven by chirality switching (CS) and an ultralow spin-orbit-torque (SOT) current. The CS, as the driving force of DWM, is achieved by the sign change of the Dzyaloshinskii-Moriya interaction, which is further induced by a ferroelectric switching voltage. The SOT is used to break the symmetry when the magnetic moment is rotated in the Bloch direction. We numerically investigate the underlying principle and the effect of key parameters on the DWM by micromagnetic simulations. Under the CS mechanism, a fast (∼102 m/s), ultralow energy (∼5 attoJoule), and precisely discretized DWM can be achieved. Considering that skyrmions with topological protection and smaller size are also promising for future racetracks, we similarly evaluate the feasibility of applying such a CS mechanism to a skyrmion. However, we find that the CS causes it to "breathe" instead of moving. Our results demonstrate that the CS strategy is suitable for future DW racetrack memory with ultralow power consumption and discretized DWM.
Collapse
Affiliation(s)
- Shen Li
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
- Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
- Hefei Innovation Research Institute, Beihang University, Hefei 230013, China
| | - Xiaoyang Lin
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
- Hefei Innovation Research Institute, Beihang University, Hefei 230013, China
| | - Pingzhi Li
- Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Suteng Zhao
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Zhizhong Si
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Guodong Wei
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Bert Koopmans
- Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Reinoud Lavrijsen
- Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Weisheng Zhao
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
- Hefei Innovation Research Institute, Beihang University, Hefei 230013, China
| |
Collapse
|
5
|
Kateel V, Krizakova V, Rao S, Cai K, Gupta M, Monteiro MG, Yasin F, Sorée B, De Boeck J, Couet S, Gambardella P, Kar GS, Garello K. Field-Free Spin-Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current. NANO LETTERS 2023. [PMID: 37295781 DOI: 10.1021/acs.nanolett.3c00639] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making them attractive for memory, in-memory computing, and logic applications. However, the requirement of the external magnetic field to achieve deterministic switching in perpendicularly magnetized SOT-MTJs limits its implementation for practical applications. Here, we introduce a field-free switching (FFS) solution for the SOT-MTJ device by shaping the SOT channel to create a "bend" in the SOT current. The resulting bend in the charge current creates a spatially nonuniform spin current, which translates into inhomogeneous SOT on an adjacent magnetic free layer enabling deterministic switching. We demonstrate FFS experimentally on scaled SOT-MTJs at nanosecond time scales. This proposed scheme is scalable, material-agnostic, and readily compatible with wafer-scale manufacturing, thus creating a pathway for developing purely current-driven SOT systems.
Collapse
Affiliation(s)
- Vaishnavi Kateel
- IMEC Kapeldreef 75, B-3001 Leuven, Belgium
- Department of Electrical Engineering ESAT, KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium
| | - Viola Krizakova
- Department of Materials, ETH Zurich, 8093 Zürich, Switzerland
| | | | | | | | - Maxwel Gama Monteiro
- IMEC Kapeldreef 75, B-3001 Leuven, Belgium
- Department of Electrical Engineering ESAT, KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium
| | | | - Bart Sorée
- IMEC Kapeldreef 75, B-3001 Leuven, Belgium
- Department of Electrical Engineering ESAT, KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium
| | - Johan De Boeck
- IMEC Kapeldreef 75, B-3001 Leuven, Belgium
- Department of Electrical Engineering ESAT, KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium
| | | | | | | | - Kevin Garello
- IMEC Kapeldreef 75, B-3001 Leuven, Belgium
- Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, 38000 Grenoble, France
| |
Collapse
|
6
|
Li M, Li C, Xu X, Wang M, Zhu Z, Meng K, He B, Yu G, Hu Y, Peng LM, Jiang Y. An Ultrathin Flexible Programmable Spin Logic Device Based on Spin-Orbit Torque. NANO LETTERS 2023; 23:3818-3825. [PMID: 37083297 DOI: 10.1021/acs.nanolett.3c00231] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Flexible electronic devices have shown increasingly promising value facilitating our daily lives. However, flexible spintronic devices remain in their infancy. Here, this research demonstrates a type of nonvolatile, low power dissipation, and programmable flexible spin logic device, which is based on the spin-orbit torque in polyimide (PI)/Ta/Pt/Co/Pt heterostructures fabricated via capillary-assisted electrochemical delamination. The magnetization switching ratio is shown to be about 50% for the flexible device and does not change after 100 cycles of bending, indicating the device has stable performance. By designing the path of pulse current, five Boolean logic gates AND, NAND, NOT, NOR, and OR can be realized in an integrated two-element device. Moreover, such peeling-off devices can be successfully transferred to almost any substrate, such as paper and human skin, and maintain high performance. The flexible PI/Ta/Pt/Co/Pt spin logic device serves as logic-in-memory architecture and can be used in wearable electronics.
Collapse
Affiliation(s)
- Meiling Li
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Chexin Li
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Xiaoguang Xu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Mengxi Wang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
- Key Laboratory of Spintronics Materials, Devices and Systems of Zhejiang Province, Hangzhou 311300, China
| | - Zhiqiang Zhu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Kangkang Meng
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Bin He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Guoqiang Yu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Youfan Hu
- Key Laboratory for the Physics and Chemistry of Nanodevices, Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices, Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China
| | - Yong Jiang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| |
Collapse
|
7
|
Wang D, Tang R, Lin H, Liu L, Xu N, Sun Y, Zhao X, Wang Z, Wang D, Mai Z, Zhou Y, Gao N, Song C, Zhu L, Wu T, Liu M, Xing G. Spintronic leaky-integrate-fire spiking neurons with self-reset and winner-takes-all for neuromorphic computing. Nat Commun 2023; 14:1068. [PMID: 36828856 PMCID: PMC9957988 DOI: 10.1038/s41467-023-36728-1] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/28/2022] [Accepted: 02/14/2023] [Indexed: 02/26/2023] Open
Abstract
Neuromorphic computing using nonvolatile memories is expected to tackle the memory wall and energy efficiency bottleneck in the von Neumann system and to mitigate the stagnation of Moore's law. However, an ideal artificial neuron possessing bio-inspired behaviors as exemplified by the requisite leaky-integrate-fire and self-reset (LIFT) functionalities within a single device is still lacking. Here, we report a new type of spiking neuron with LIFT characteristics by manipulating the magnetic domain wall motion in a synthetic antiferromagnetic (SAF) heterostructure. We validate the mechanism of Joule heating modulated competition between the Ruderman-Kittel-Kasuya-Yosida interaction and the built-in field in the SAF device, enabling it with a firing rate up to 17 MHz and energy consumption of 486 fJ/spike. A spiking neuron circuit is implemented with a latency of 170 ps and power consumption of 90.99 μW. Moreover, the winner-takes-all is executed with a current ratio >104 between activated and inhibited neurons. We further establish a two-layer spiking neural network based on the developed spintronic LIFT neurons. The architecture achieves 88.5% accuracy on the handwritten digit database benchmark. Our studies corroborate the circuit compatibility of the spintronic neurons and their great potential in the field of intelligent devices and neuromorphic computing.
Collapse
Affiliation(s)
- Di Wang
- Key Laboratory of Microelectronics Devices & Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Ruifeng Tang
- Key Laboratory of Microelectronics Devices & Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Huai Lin
- Key Laboratory of Microelectronics Devices & Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Long Liu
- Key Laboratory of Microelectronics Devices & Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Nuo Xu
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA
| | - Yan Sun
- Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
| | - Xuefeng Zhao
- Key Laboratory of Microelectronics Devices & Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, Anhui, China
| | - Ziwei Wang
- Key Laboratory of Microelectronics Devices & Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Dandan Wang
- Jiufengshan Laboratory, Wuhan, 430206, Hubei, China
| | - Zhihong Mai
- Jiufengshan Laboratory, Wuhan, 430206, Hubei, China
| | - Yongjian Zhou
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Nan Gao
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, Anhui, China
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Lijun Zhu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China
| | - Tom Wu
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
| | - Ming Liu
- Key Laboratory of Microelectronics Devices & Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Guozhong Xing
- Key Laboratory of Microelectronics Devices & Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China.
- University of Chinese Academy of Sciences, 100049, Beijing, China.
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, Anhui, China.
| |
Collapse
|
8
|
Xie X, Wang X, Wang W, Zhao X, Bai L, Chen Y, Tian Y, Yan S. Engineering Spin Configurations of Synthetic Antiferromagnet by Controlling Long-Range Oscillatory Interlayer Coupling and Neighboring Ferrimagnetic Coupling. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208275. [PMID: 36268544 DOI: 10.1002/adma.202208275] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/08/2022] [Revised: 10/07/2022] [Indexed: 06/16/2023]
Abstract
Controllable manipulation of specific spin configurations of magnetic materials is the key to constructing functional spintronic devices. Here, it is demonstrated by integrating the merits of ferromagnetic, ferrimagnetic, and antiferromagnetic spin configurations into one synthetic antiferromagnetic (SAF) heterostructure by controlling both long-range oscillatory interlayer coupling and neighboring ferrimagnetic coupling. A controllable manipulation of four types of spin configurations of the Pt/[Co/Pt/Co]/Ru/CoTb SAF heterostructures composed of ferromagnetic Co/Pt/Co and ferrimagnetic CoTb layers is successfully achieved. In particular, the compensated magnetization, enhanced anomalous Hall resistance in the remanence state, wide-temperature spin-orbit torque switching of magnetization, and high immunity to the external magnetic field are simultaneously obtained in one of the SAF heterojunctions with macroscopic interlayer antiferromagnetic coupling. This design concept of engineering spin configurations may enable efficient spin manipulation for customized memory and logic applications.
Collapse
Affiliation(s)
- Xuejie Xie
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Xiujuan Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Wei Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Xiaonan Zhao
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Lihui Bai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Yanxue Chen
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Yufeng Tian
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Shishen Yan
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| |
Collapse
|
9
|
He W, Wan C, Zheng C, Wang Y, Wang X, Ma T, Wang Y, Guo C, Luo X, Stebliy ME, Yu G, Liu Y, Ognev AV, Samardak AS, Han X. Field-Free Spin-Orbit Torque Switching Enabled by the Interlayer Dzyaloshinskii-Moriya Interaction. NANO LETTERS 2022; 22:6857-6865. [PMID: 35849087 DOI: 10.1021/acs.nanolett.1c04786] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Perpendicularly magnetized structures that are switchable using a spin current under field-free conditions can potentially be applied in spin-orbit torque magnetic random-access memory (SOT-MRAM). Several structures have been developed; however, new structures with a simple stack structure and MRAM compatibility are urgently needed. Herein, a typical structure in a perpendicular spin-transfer torque MRAM, the Pt/Co multilayer and its synthetic antiferromagnetic counterpart with perpendicular magnetic anisotropy, was observed to possess an intrinsic interlayer chiral interaction between neighboring magnetic layers, namely, the interlayer Dzyaloshinskii-Moriya interaction (DMI) effect. Furthermore, using a current parallel to the eigenvector of the interlayer DMI, we switched the perpendicular magnetization of both structures without a magnetic field, owing to the additional symmetry breaking introduced by the interlayer DMI. This SOT switching scheme realized in the Pt/Co multilayer and its synthetic antiferromagnet structure may open a new avenue toward practical perpendicular SOT-MRAM and other SOT devices.
Collapse
Affiliation(s)
- Wenqing He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Caihua Wan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Cuixiu Zheng
- School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| | - Yizhan Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Xiao Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Tianyi Ma
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Yuqiang Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Chenyang Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Xuming Luo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Maksim E Stebliy
- Laboratory of Spin-Orbitronics, Institute of High Technologies and Advanced Materials, Far Eastern Federal University, Vladivostok 690922, Russia
| | - Guoqiang Yu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Yaowen Liu
- School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| | - Alexey V Ognev
- Laboratory of Spin-Orbitronics, Institute of High Technologies and Advanced Materials, Far Eastern Federal University, Vladivostok 690922, Russia
| | - Alexander S Samardak
- Laboratory of Spin-Orbitronics, Institute of High Technologies and Advanced Materials, Far Eastern Federal University, Vladivostok 690922, Russia
| | - Xiufeng Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| |
Collapse
|
10
|
Huang Q, Guan C, Fan Y, Zhao X, Han X, Dong Y, Xie X, Zhou T, Bai L, Peng Y, Tian Y, Yan S. Field-Free Magnetization Switching in a Ferromagnetic Single Layer through Multiple Inversion Asymmetry Engineering. ACS NANO 2022; 16:12462-12470. [PMID: 35866710 DOI: 10.1021/acsnano.2c03756] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
A simple, reliable, and self-switchable spin-orbit torque (SOT)-induced magnetization switching in a ferromagnetic single layer is needed for the development of next generation fully electrical controllable spintronic devices. In this work, field-free SOT-induced magnetization switching in a CoPt single layer is realized by broken multiple inversion symmetry through simultaneously introducing both oblique sputtering and a vertical composition gradient. A quantitative analysis indicates that multiple inversion asymmetries can produce dynamical bias fields along both z- and x-axes, leading to the observed field-free deterministic magnetization switching. Our study provides a method to accomplish fully electrical manipulation of magnetization in a ferromagnetic single layer without the external magnetic field and auxiliary heavy metal layer, enabling flexible design for future spin-orbit torque-based memory and logic devices.
Collapse
Affiliation(s)
- Qikun Huang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Chaoshuai Guan
- Key Laboratory of Magnetism and Magnetic Materials of the Ministry of Education, School of Materials and Energy and Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou 730000, China
| | - Yibo Fan
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Xiaonan Zhao
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Xiang Han
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yanan Dong
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Xuejie Xie
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Tie Zhou
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Lihui Bai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yong Peng
- Key Laboratory of Magnetism and Magnetic Materials of the Ministry of Education, School of Materials and Energy and Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou 730000, China
| | - Yufeng Tian
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Shishen Yan
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| |
Collapse
|
11
|
Cui B, Zhu Z, Wu C, Guo X, Nie Z, Wu H, Guo T, Chen P, Zheng D, Yu T, Xi L, Zeng Z, Liang S, Zhang G, Yu G, Wang KL. Comprehensive Study of the Current-Induced Spin-Orbit Torque Perpendicular Effective Field in Asymmetric Multilayers. NANOMATERIALS 2022; 12:nano12111887. [PMID: 35683740 PMCID: PMC9182025 DOI: 10.3390/nano12111887] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/05/2022] [Revised: 05/29/2022] [Accepted: 05/30/2022] [Indexed: 12/04/2022]
Abstract
The spin–orbit torques (SOTs) in the heavy metal (HM)/ferromagnetic metal (FM) structure hold promise for next-generation low-power and high-density spintronic memory and logic applications. For the SOT switching of a perpendicular magnetization, an external magnetic field is inevitable for breaking the mirror symmetry, which is not practical for high-density nanoelectronics applications. In this work, we study the current-induced field-free SOT switching and SOT perpendicular effective field (Hzeff) in a variety of laterally asymmetric multilayers, where the asymmetry is introduced by growing the FM layer in a wedge shape. We show that the design of structural asymmetry by wedging the FM layer is a universal scheme for realizing field-free SOT switching. Moreover, by comparing the FM layer thickness dependence of (Hzeff) in different samples, we show that the efficiency (β =Hzeff/J, J is the current density) is sensitive to the HM/FM interface and the FM layer thickness. The sign of β for thin FM thicknesses is related to the spin Hall angle (θSH) of the HM layer attached to the FM layer. β changes its sign with the thickness of the FM layer increasing, which may be caused by the thickness dependence of the work function of FM. These results show the possibility of engineering the deterministic field-free switching by combining the symmetry breaking and the materials design of the HM/FM interface.
Collapse
Affiliation(s)
- Baoshan Cui
- Songshan Lake Materials Laboratory, Dongguan 523808, China; (B.C.); (Z.Z.); (C.W.); (T.G.); (P.C.); (D.Z.); (G.Z.)
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
- Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China;
| | - Zengtai Zhu
- Songshan Lake Materials Laboratory, Dongguan 523808, China; (B.C.); (Z.Z.); (C.W.); (T.G.); (P.C.); (D.Z.); (G.Z.)
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
| | - Chuangwen Wu
- Songshan Lake Materials Laboratory, Dongguan 523808, China; (B.C.); (Z.Z.); (C.W.); (T.G.); (P.C.); (D.Z.); (G.Z.)
- Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, China;
| | - Xiaobin Guo
- School of Physics & Optoelectric Engineering, Guangdong University of Technology, Guangzhou 510006, China;
| | - Zhuyang Nie
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
- College of Physics, Sichuan University, Chengdu 610064, China;
| | - Hao Wu
- Songshan Lake Materials Laboratory, Dongguan 523808, China; (B.C.); (Z.Z.); (C.W.); (T.G.); (P.C.); (D.Z.); (G.Z.)
- Department of Electrical Engineering, University of California, Los Angeles, CA 90095, USA;
- Correspondence: (H.W.); (G.Y.)
| | - Tengyu Guo
- Songshan Lake Materials Laboratory, Dongguan 523808, China; (B.C.); (Z.Z.); (C.W.); (T.G.); (P.C.); (D.Z.); (G.Z.)
| | - Peng Chen
- Songshan Lake Materials Laboratory, Dongguan 523808, China; (B.C.); (Z.Z.); (C.W.); (T.G.); (P.C.); (D.Z.); (G.Z.)
| | - Dongfeng Zheng
- Songshan Lake Materials Laboratory, Dongguan 523808, China; (B.C.); (Z.Z.); (C.W.); (T.G.); (P.C.); (D.Z.); (G.Z.)
| | - Tian Yu
- College of Physics, Sichuan University, Chengdu 610064, China;
- Department of Electrical Engineering, University of California, Los Angeles, CA 90095, USA;
| | - Li Xi
- Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China;
| | - Zhongming Zeng
- Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
| | - Shiheng Liang
- Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, China;
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, China; (B.C.); (Z.Z.); (C.W.); (T.G.); (P.C.); (D.Z.); (G.Z.)
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
| | - Guoqiang Yu
- Songshan Lake Materials Laboratory, Dongguan 523808, China; (B.C.); (Z.Z.); (C.W.); (T.G.); (P.C.); (D.Z.); (G.Z.)
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
- Correspondence: (H.W.); (G.Y.)
| | - Kang L. Wang
- Department of Electrical Engineering, University of California, Los Angeles, CA 90095, USA;
| |
Collapse
|
12
|
Wu B, Jin M, Luo Y, Xu X, Fan H, Huang H, Feng Z, Zhuang Y, Yu C, Zhou T. Enhancement of Damping-Like Field and Field-Free Switching in Pt/(Co/Pt)/PtMn Trilayer Films Prepared in the Presence of an In Situ Magnetic Field. ACS APPLIED MATERIALS & INTERFACES 2022; 14:21668-21676. [PMID: 35471960 DOI: 10.1021/acsami.2c02621] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The current-induced magnetization switching and damping-like field in Pt/(Co/Pt)/PtMn trilayer films prepared with and without an in situ in-plane field of 600 Oe have been studied systematically. In the presence of the in situ field, a small in-plane bias field (HEB) is observed for films with PtMn thickness ≥5 nm, while there is no observable HEB for PtMn thickness ≤3 nm. Nevertheless, a field-free switching of perpendicular magnetization of Co/Pt is observed for all the films with the PtMn thickness of 1-7 nm. On the other hand, without the presence of the in situ field, HEB and field-free switching are not seen. Furthermore, the damping-like fields (HDL) are much enhanced in the presence of the in situ field, and the increasement can be up to 47%. We further revealed that the spin current is mainly from the Pt layer, while the noncollinear spin configuration at the interface caused by the in situ in-plane field may play a role in the HDL enhancement. Micromagnetic simulations indicate that the canting of antiferromagnet PtMn spins plays an important role in the field-free switching. Our findings clarify the source of spin current in the trilayer films and provide an easier approach to field-free switching and HDL enhancement for future low-power spintronic devices.
Collapse
Affiliation(s)
- Birui Wu
- School of Electronics and Information Engineering, Hangzhou Dianzi University, Hangzhou, Zhejiang 310018, China
- College of Information and Mechanical Electrical Engineering, Ningde Normal University, Ningde 352100, China
| | - Menghao Jin
- School of Electronics and Information Engineering, Hangzhou Dianzi University, Hangzhou, Zhejiang 310018, China
| | - Yongming Luo
- School of Electronics and Information Engineering, Hangzhou Dianzi University, Hangzhou, Zhejiang 310018, China
| | - Xiuyuan Xu
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L3 8LG, UK
| | - Haodong Fan
- School of Electronics and Information Engineering, Hangzhou Dianzi University, Hangzhou, Zhejiang 310018, China
| | - Haixia Huang
- School of Electronics and Information Engineering, Hangzhou Dianzi University, Hangzhou, Zhejiang 310018, China
| | - Zhongshu Feng
- School of Electronics and Information Engineering, Hangzhou Dianzi University, Hangzhou, Zhejiang 310018, China
| | - Yanshan Zhuang
- School of Electronics and Information Engineering, Hangzhou Dianzi University, Hangzhou, Zhejiang 310018, China
| | - Changqiu Yu
- School of Electronics and Information Engineering, Hangzhou Dianzi University, Hangzhou, Zhejiang 310018, China
| | - Tiejun Zhou
- School of Electronics and Information Engineering, Hangzhou Dianzi University, Hangzhou, Zhejiang 310018, China
| |
Collapse
|
13
|
Fan Y, Han X, Zhao X, Dong Y, Chen Y, Bai L, Yan S, Tian Y. Programmable Spin-Orbit Torque Multistate Memory and Spin Logic Cell. ACS NANO 2022; 16:6878-6885. [PMID: 35349269 DOI: 10.1021/acsnano.2c01930] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Controllable spin-orbit torque based nonvolatile memory is highly desired for constructing energy efficient reconfigurable logic-in-memory computing suitable for emerging data-intensive applications. Here, we report our exploration of the IrMn/Co/Ru/CoPt/CoO heterojunction as a potential candidate for applications in both multistate memory and programmable spin logic. The studied heterojunction can be programmed into four different magnetic configurations at will by tuning both the in-plane exchange bias at the interface of IrMn and Co layers and the out-of-plane exchange bias at the interface of CoPt and CoO layers. Moreover, on the basis of the controllable exchange bias effect, 10 states of nonvolatile memory and multiple logic-in-memory functions have been demonstrated. Our findings indicate that IrMn/Co/Ru/CoPt/CoO multilayered structures can be used as a building block for next-generation logic-in-memory and multifunctional multidimensional spintronic devices.
Collapse
Affiliation(s)
- Yibo Fan
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Xiang Han
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Xiaonan Zhao
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yanan Dong
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yanxue Chen
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Lihui Bai
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Shishen Yan
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Yufeng Tian
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| |
Collapse
|
14
|
Ju H, Zhao X, Liu W, Song Y, Liu L, Ma J, Li Y, Wu J, Zhang Z. Enhanced Spin-Orbit Torque and Low Critical Current Density in Pt 100-xRu x/[CoNi]/Ru Multilayer for Spintronic Devices. ACS APPLIED MATERIALS & INTERFACES 2021; 13:61742-61750. [PMID: 34905352 DOI: 10.1021/acsami.1c17653] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Using a heavy-metal (HM) alloy layer in spin-orbit torque (SOT)-based devices is an effective method for obtaining a high current-spin conversion efficiency θSH. In this work, SOT-based spintronic devices with a Pt100-xRux-alloyed HM layer are studied by applying harmonic Hall measurements and magneto-optical Kerr effect microscopy to detect the θSH and to observe the process of current-induced magnetization switching. Both the highest θSH of 0.132 and the lowest critical current density (Jc) of 8 × 105 A/cm2 are realized in a device with x = 20, which satisfies the high SOT efficiency and low energy consumption simultaneously. The interfacial Dzyaloshinskii-Moriya interaction can be overcome by increasing the in-plane assist field. Meanwhile, the minimum in-plane field required for current-induced complete switching can be reduced to ±60 Oe. Our study reveals that using the Pt-Ru alloyed HM layer is an effective route for SOT application with enhanced performance.
Collapse
Affiliation(s)
- Hongzhan Ju
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Xiaotian Zhao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Wei Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Yuhang Song
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Long Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Jun Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Yang Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Jinxiang Wu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Zhidong Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| |
Collapse
|