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Shan JY, Morrison N, Chen SD, Wang F, Ma EY. Johnson-noise-limited cancellation-free microwave impedance microscopy with monolithic silicon cantilever probes. Nat Commun 2024; 15:5043. [PMID: 38871722 PMCID: PMC11176329 DOI: 10.1038/s41467-024-49405-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/20/2023] [Accepted: 06/04/2024] [Indexed: 06/15/2024] Open
Abstract
Microwave impedance microscopy (MIM) is an emerging scanning probe technique for nanoscale complex permittivity mapping and has made significant impacts in diverse fields. To date, the most significant hurdles that limit its widespread use are the requirements of specialized microwave probes and high-precision cancellation circuits. Here, we show that forgoing both elements not only is feasible but also enhances performance. Using monolithic silicon cantilever probes and a cancellation-free architecture, we demonstrate Johnson-noise-limited, drift-free MIM operation with 15 nm spatial resolution, minimal topography crosstalk, and an unprecedented sensitivity of 0.26 zF/√Hz. We accomplish this by taking advantage of the high mechanical resonant frequency and spatial resolution of silicon probes, the inherent common-mode phase noise rejection of self-referenced homodyne detection, and the exceptional stability of the streamlined architecture. Our approach makes MIM drastically more accessible and paves the way for advanced operation modes as well as integration with complementary techniques.
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Affiliation(s)
- Jun-Yi Shan
- Department of Physics, University of California, Berkeley, Berkeley, CA, 94720, USA
- Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Nathaniel Morrison
- Department of Physics, University of California, Berkeley, Berkeley, CA, 94720, USA
- Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Su-Di Chen
- Department of Physics, University of California, Berkeley, Berkeley, CA, 94720, USA
- Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Kavli Energy NanoScience Institute, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Feng Wang
- Department of Physics, University of California, Berkeley, Berkeley, CA, 94720, USA
- Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Kavli Energy NanoScience Institute, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Eric Y Ma
- Department of Physics, University of California, Berkeley, Berkeley, CA, 94720, USA.
- Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, 94720, USA.
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2
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Pendharkar M, Tran SJ, Zaborski G, Finney J, Sharpe AL, Kamat RV, Kalantre SS, Hocking M, Bittner NJ, Watanabe K, Taniguchi T, Pittenger B, Newcomb CJ, Kastner MA, Mannix AJ, Goldhaber-Gordon D. Torsional force microscopy of van der Waals moirés and atomic lattices. Proc Natl Acad Sci U S A 2024; 121:e2314083121. [PMID: 38427599 DOI: 10.1073/pnas.2314083121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/17/2023] [Accepted: 01/11/2024] [Indexed: 03/03/2024] Open
Abstract
In a stack of atomically thin van der Waals layers, introducing interlayer twist creates a moiré superlattice whose period is a function of twist angle. Changes in that twist angle of even hundredths of a degree can dramatically transform the system's electronic properties. Setting a precise and uniform twist angle for a stack remains difficult; hence, determining that twist angle and mapping its spatial variation is very important. Techniques have emerged to do this by imaging the moiré, but most of these require sophisticated infrastructure, time-consuming sample preparation beyond stack synthesis, or both. In this work, we show that torsional force microscopy (TFM), a scanning probe technique sensitive to dynamic friction, can reveal surface and shallow subsurface structure of van der Waals stacks on multiple length scales: the moirés formed between bi-layers of graphene and between graphene and hexagonal boron nitride (hBN) and also the atomic crystal lattices of graphene and hBN. In TFM, torsional motion of an Atomic Force Microscope (AFM) cantilever is monitored as it is actively driven at a torsional resonance while a feedback loop maintains contact at a set force with the sample surface. TFM works at room temperature in air, with no need for an electrical bias between the tip and the sample, making it applicable to a wide array of samples. It should enable determination of precise structural information including twist angles and strain in moiré superlattices and crystallographic orientation of van der Waals flakes to support predictable moiré heterostructure fabrication.
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Affiliation(s)
- Mihir Pendharkar
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
| | - Steven J Tran
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025
- Department of Physics, Stanford University, Stanford, CA 94305
| | - Gregory Zaborski
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
| | - Joe Finney
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025
- Department of Physics, Stanford University, Stanford, CA 94305
| | - Aaron L Sharpe
- Materials Physics Department, Sandia National Laboratories, Livermore, CA 94550
| | - Rupini V Kamat
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025
- Department of Physics, Stanford University, Stanford, CA 94305
| | - Sandesh S Kalantre
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025
- Department of Physics, Stanford University, Stanford, CA 94305
| | - Marisa Hocking
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
| | | | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | | | | | - Marc A Kastner
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025
- Department of Physics, Stanford University, Stanford, CA 94305
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139
| | - Andrew J Mannix
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
| | - David Goldhaber-Gordon
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025
- Department of Physics, Stanford University, Stanford, CA 94305
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3
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Baghdasaryan Z, Babajanyan A, Friedman B, Lee K. Characterization of interaction phenomena of electromagnetic waves with metamaterials via microwave near-field visualization technique. Sci Rep 2023; 13:18457. [PMID: 37891377 PMCID: PMC10611794 DOI: 10.1038/s41598-023-45665-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/31/2023] [Accepted: 10/22/2023] [Indexed: 10/29/2023] Open
Abstract
A new practical imaging technique was presented for metamaterial characterization and investigation by visualizations of the magnetic microwave near-field (H-MWNF) distributions on a metamaterial's surface using the method of thermo-elastic optical indicator microscopy (TEOIM). ITO-based transparent and ceramic-based opaque metamaterial structures were designed for magnetic near-field visualization. Depending on the incident microwave field polarization, the TEOIM system allows the characterization of the metamaterial properties and microwave interaction behavior. The working principle of the periodic structures was investigated through numerical simulations, and the obtained results exhibited strong agreement when compared with experimental observations. Moreover, the visualization of the H-MWNF revealed the potential to characterize and evaluate the absorption and transmission properties effectively.
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Affiliation(s)
| | - Arsen Babajanyan
- Institute of Physics, Yerevan State University, 0025, Yerevan, Armenia
| | - Barry Friedman
- Department of Physics, Sam Houston State University, Huntsville, TX, 77341, USA
| | - Kiejin Lee
- Department of Physics, Sogang University, Seoul, 121-742, Korea.
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4
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Gadelha AC, Nguyen VH, Neto EGS, Santana F, Raschke MB, Lamparski M, Meunier V, Charlier JC, Jorio A. Electron-Phonon Coupling in a Magic-Angle Twisted-Bilayer Graphene Device from Gate-Dependent Raman Spectroscopy and Atomistic Modeling. NANO LETTERS 2022; 22:6069-6074. [PMID: 35878122 DOI: 10.1021/acs.nanolett.2c00905] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The importance of phonons in the strong correlation phenomena observed in twisted-bilayer graphene (TBG) at the so-called magic-angle is under debate. Here we apply gate-dependent micro-Raman spectroscopy to monitor the G band line width in TBG devices of twist angles θ = 0° (Bernal), ∼1.1° (magic-angle), and ∼7° (large-angle). The results show a broad and p-/n-asymmetric doping behavior at the magic angle, in clear contrast to the behavior observed in twist angles above and below this point. Atomistic modeling reproduces the experimental observations in close connection with the joint density of electronic states in the electron-phonon scattering process, revealing how the unique electronic structure of magic-angle TBGs influences the electron-phonon coupling and, consequently, the G band line width. Overall, the value of the G band line width in magic-angle TBG is larger when compared to that of the other samples, in qualitative agreement with our calculations.
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Affiliation(s)
- Andreij C Gadelha
- Physics Department, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais 31270-901, Brazil
- Department of Physics, and JILA, University of Colorado at Boulder, Boulder, Colorado 80309, United States
| | - Viet-Hung Nguyen
- Institute of Condensed Matter and Nanosciences, Université Catholique de Louvain (UCLouvain), Louvain-la-Neuve 1348, Belgium
| | - Eliel G S Neto
- Physics Institute, Universidade Federal da Bahia, Salvador, Bahia 40170-115 Brazil
| | - Fabiano Santana
- Physics Department, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais 31270-901, Brazil
| | - Markus B Raschke
- Department of Physics, and JILA, University of Colorado at Boulder, Boulder, Colorado 80309, United States
| | - Michael Lamparski
- Department of Physics, Applied Physics, and Astronomy, Jonsson Rowland Science Center, Troy, New York 12180-3590, United States
| | - Vincent Meunier
- Department of Physics, Applied Physics, and Astronomy, Jonsson Rowland Science Center, Troy, New York 12180-3590, United States
| | - Jean-Christophe Charlier
- Institute of Condensed Matter and Nanosciences, Université Catholique de Louvain (UCLouvain), Louvain-la-Neuve 1348, Belgium
| | - Ado Jorio
- Physics Department, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais 31270-901, Brazil
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5
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Li Y, Xue M, Fan H, Gao CF, Shi Y, Liu Y, Watanabe K, Tanguchi T, Zhao Y, Wu F, Wang X, Shi Y, Guo W, Zhang Z, Fei Z, Li J. Symmetry Breaking and Anomalous Conductivity in a Double-Moiré Superlattice. NANO LETTERS 2022; 22:6215-6222. [PMID: 35852915 DOI: 10.1021/acs.nanolett.2c01710] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
In a two-dimensional moiré superlattice, the atomic reconstruction of constituent layers could introduce significant modifications to the lattice symmetry and electronic structure at small twist angles. Here, we employ conductive atomic force microscopy to investigate a twisted trilayer graphene double-moiré superlattice. Two sets of moiré superlattices are observed. At neighboring domains of the large moiré, the current exhibits either 2- or 6-fold rotational symmetry, indicating delicate symmetry breaking beyond the rigid model. Moreover, an anomalous current appears at the "A-A" stacking site of the larger moiré, contradictory to previous observations on twisted bilayer graphene. Both behaviors can be understood by atomic reconstruction, and we also show that the measured current is dominated by the tip-graphene contact resistance that maps the local work function qualitatively. Our results reveal new insights of atomic reconstruction in novel moiré superlattices and opportunities for manipulating exotic quantum states on the basis of twisted van der Waals heterostructures.
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Affiliation(s)
- Yuhao Li
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, Jiangsu, People's Republic of China
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, Guangdong, People's Republic of China
- State Key Laboratory of Mechanics and Control of Mechanical Structures, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, Jiangsu, People's Republic of China
| | - Minmin Xue
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, Institute for Frontier Science of Nanjing University of Aeronautics and Astronautics, Nanjing 210016, People's Republic of China
| | - Hua Fan
- Department of Physics, Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, Guangdong, People's Republic of China
| | - Cun-Fa Gao
- State Key Laboratory of Mechanics and Control of Mechanical Structures, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, Jiangsu, People's Republic of China
| | - Yan Shi
- State Key Laboratory of Mechanics and Control of Mechanical Structures, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, Jiangsu, People's Republic of China
| | - Yang Liu
- Jinan Institute of Quantum Technology, Jinan 250101, Shandong, People's Republic of China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Tanguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Yue Zhao
- Department of Physics, Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, Guangdong, People's Republic of China
| | - Fengcheng Wu
- School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
- Wuhan Institute of Quantum Technology, Wuhan 430206, People's Republic of China
| | - Xinran Wang
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, Jiangsu, People's Republic of China
| | - Yi Shi
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, Jiangsu, People's Republic of China
| | - Wanlin Guo
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, Institute for Frontier Science of Nanjing University of Aeronautics and Astronautics, Nanjing 210016, People's Republic of China
| | - Zhuhua Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, Institute for Frontier Science of Nanjing University of Aeronautics and Astronautics, Nanjing 210016, People's Republic of China
| | - Zaiyao Fei
- National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, Jiangsu, People's Republic of China
| | - Jiangyu Li
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, Guangdong, People's Republic of China
- Guangdong Provisional Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, Guangdong, People's Republic of China
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6
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3D visualization of microwave electric and magnetic fields by using a metasurface-based indicator. Sci Rep 2022; 12:6150. [PMID: 35414676 PMCID: PMC9005508 DOI: 10.1038/s41598-022-10073-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/15/2021] [Accepted: 03/07/2022] [Indexed: 11/25/2022] Open
Abstract
Visualizations of the microwave electric and magnetic near-field distributions of radio-frequency (RF) filters were performed using the technique of thermoelastic optical indicator microscopy (TEOIM). New optical indicators based on periodic dielectric-metal structures were designed for electric field visualization. Depending on the structure orientation, such metasurface-based indicators allow separately visualization of the Ex and Ey components of the in-plane electric field. Numerical simulations were conducted to examine the working principle of the designed indicator structures, and the results were compared to the experimental, showing good agreement. In addition, the 3D visualization of the microwave near-field distribution was built, to show the field intensity and distribution dependencies on the distance from the RF filter.
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