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Yoshimura A, Lamparski M, Giedt J, Lingerfelt D, Jakowski J, Ganesh P, Yu T, Sumpter BG, Meunier V. Quantum theory of electronic excitation and sputtering by transmission electron microscopy. Nanoscale 2023; 15:1053-1067. [PMID: 35703316 DOI: 10.1039/d2nr01018f] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Many computational models have been developed to predict the rates of atomic displacements in two-dimensional (2D) materials under electron beam irradiation. However, these models often drastically underestimate the displacement rates in 2D insulators, in which beam-induced electronic excitations can reduce the binding energies of the irradiated atoms. This bond softening leads to a qualitative disagreement between theory and experiment, in that substantial sputtering is experimentally observed at beam energies deemed far too small to drive atomic dislocation by many current models. To address these theoretical shortcomings, this paper develops a first-principles method to calculate the probability of beam-induced electronic excitations by coupling quantum electrodynamics (QED) scattering amplitudes to density functional theory (DFT) single-particle orbitals. The presented theory then explicitly considers the effect of these electronic excitations on the sputtering cross section. Applying this method to 2D hexagonal BN and MoS2 significantly increases their calculated sputtering cross sections and correctly yields appreciable sputtering rates at beam energies previously predicted to leave the crystals intact. The proposed QED-DFT approach can be easily extended to describe a rich variety of beam-driven phenomena in any crystalline material.
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Affiliation(s)
- Anthony Yoshimura
- Lawrence Livermore National Laboratory, Livermore, CA 94550, USA.
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
| | - Michael Lamparski
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
| | - Joel Giedt
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
| | - David Lingerfelt
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Jacek Jakowski
- Computational Sciences and Engineering Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Panchapakesan Ganesh
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Tao Yu
- Department of Chemistry, University of North Dakota, Grand Forks, ND 58202, USA
| | - Bobby G Sumpter
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Vincent Meunier
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
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Gadelha AC, Nguyen VH, Neto EGS, Santana F, Raschke MB, Lamparski M, Meunier V, Charlier JC, Jorio A. Electron-Phonon Coupling in a Magic-Angle Twisted-Bilayer Graphene Device from Gate-Dependent Raman Spectroscopy and Atomistic Modeling. Nano Lett 2022; 22:6069-6074. [PMID: 35878122 DOI: 10.1021/acs.nanolett.2c00905] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The importance of phonons in the strong correlation phenomena observed in twisted-bilayer graphene (TBG) at the so-called magic-angle is under debate. Here we apply gate-dependent micro-Raman spectroscopy to monitor the G band line width in TBG devices of twist angles θ = 0° (Bernal), ∼1.1° (magic-angle), and ∼7° (large-angle). The results show a broad and p-/n-asymmetric doping behavior at the magic angle, in clear contrast to the behavior observed in twist angles above and below this point. Atomistic modeling reproduces the experimental observations in close connection with the joint density of electronic states in the electron-phonon scattering process, revealing how the unique electronic structure of magic-angle TBGs influences the electron-phonon coupling and, consequently, the G band line width. Overall, the value of the G band line width in magic-angle TBG is larger when compared to that of the other samples, in qualitative agreement with our calculations.
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Affiliation(s)
- Andreij C Gadelha
- Physics Department, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais 31270-901, Brazil
- Department of Physics, and JILA, University of Colorado at Boulder, Boulder, Colorado 80309, United States
| | - Viet-Hung Nguyen
- Institute of Condensed Matter and Nanosciences, Université Catholique de Louvain (UCLouvain), Louvain-la-Neuve 1348, Belgium
| | - Eliel G S Neto
- Physics Institute, Universidade Federal da Bahia, Salvador, Bahia 40170-115 Brazil
| | - Fabiano Santana
- Physics Department, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais 31270-901, Brazil
| | - Markus B Raschke
- Department of Physics, and JILA, University of Colorado at Boulder, Boulder, Colorado 80309, United States
| | - Michael Lamparski
- Department of Physics, Applied Physics, and Astronomy, Jonsson Rowland Science Center, Troy, New York 12180-3590, United States
| | - Vincent Meunier
- Department of Physics, Applied Physics, and Astronomy, Jonsson Rowland Science Center, Troy, New York 12180-3590, United States
| | - Jean-Christophe Charlier
- Institute of Condensed Matter and Nanosciences, Université Catholique de Louvain (UCLouvain), Louvain-la-Neuve 1348, Belgium
| | - Ado Jorio
- Physics Department, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais 31270-901, Brazil
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Borin Barin G, Sun Q, Di Giovannantonio M, Du CZ, Wang XY, Llinas JP, Mutlu Z, Lin Y, Wilhelm J, Overbeck J, Daniels C, Lamparski M, Sahabudeen H, Perrin ML, Urgel JI, Mishra S, Kinikar A, Widmer R, Stolz S, Bommert M, Pignedoli C, Feng X, Calame M, Müllen K, Narita A, Meunier V, Bokor J, Fasel R, Ruffieux P. Growth Optimization and Device Integration of Narrow-Bandgap Graphene Nanoribbons. Small 2022; 18:e2202301. [PMID: 35713270 DOI: 10.1002/smll.202202301] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2022] [Indexed: 06/15/2023]
Abstract
The electronic, optical, and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In this work, the growth, characterization, and device integration of 5-atom wide armchair GNRs (5-AGNRs) are studied, which are expected to have an optimal bandgap as active material in switching devices. 5-AGNRs are obtained via on-surface synthesis under ultrahigh vacuum conditions from Br- and I-substituted precursors. It is shown that the use of I-substituted precursors and the optimization of the initial precursor coverage quintupled the average 5-AGNR length. This significant length increase allowed the integration of 5-AGNRs into devices and the realization of the first field-effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. The study highlights that the optimized growth protocols can successfully bridge between the sub-nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs.
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Affiliation(s)
- Gabriela Borin Barin
- Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland
| | - Qiang Sun
- Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland
| | - Marco Di Giovannantonio
- Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland
| | - Cheng-Zhuo Du
- State Key Laboratory of Elemento-Organic Chemistry, College of Chemistry, Nankai University, Tianjin, 300071, China
| | - Xiao-Ye Wang
- State Key Laboratory of Elemento-Organic Chemistry, College of Chemistry, Nankai University, Tianjin, 300071, China
| | - Juan Pablo Llinas
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA
| | - Zafer Mutlu
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA
| | - Yuxuan Lin
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA
| | - Jan Wilhelm
- Institute of Theoretical Physics, University of Regensburg, D-93053, Regensburg, Germany
| | - Jan Overbeck
- Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland
| | - Colin Daniels
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
| | - Michael Lamparski
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
| | - Hafeesudeen Sahabudeen
- Center for Advancing Electronics Dresden, Department of Chemistry and Food Chemistry, TU Dresden, 01062, Dresden, Germany
| | - Mickael L Perrin
- Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland
| | - José I Urgel
- Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland
| | - Shantanu Mishra
- Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland
| | - Amogh Kinikar
- Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland
| | - Roland Widmer
- Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland
| | - Samuel Stolz
- Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland
| | - Max Bommert
- Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland
| | - Carlo Pignedoli
- Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland
| | - Xinliang Feng
- Center for Advancing Electronics Dresden, Department of Chemistry and Food Chemistry, TU Dresden, 01062, Dresden, Germany
| | - Michel Calame
- Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland
| | - Klaus Müllen
- Max Planck Institute for Polymer Research, 55128, Mainz, Germany
- Department of Chemistry, Johannes Gutenberg-Universität Mainz, 55128, Mainz, Germany
| | - Akimitsu Narita
- Max Planck Institute for Polymer Research, 55128, Mainz, Germany
- Organic and Carbon Nanomaterials Unit, Okinawa Institute of Science and Technology Graduate University, 1919-1 Tancha, Onna-son, Okinawa, 904-0495, Japan
| | - Vincent Meunier
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA
| | - Jeffrey Bokor
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA
| | - Roman Fasel
- Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland
- Department of Chemistry, Biochemistry and Pharmaceutical Sciences, University of Bern, Bern, 3012, Switzerland
| | - Pascal Ruffieux
- Empa, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf, 8600, Switzerland
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San Roman D, Krishnamurthy D, Garg R, Hafiz H, Lamparski M, Nuhfer NT, Meunier V, Viswanathan V, Cohen-Karni T. Engineering Three-Dimensional (3D) Out-of-Plane Graphene Edge Sites for Highly Selective Two-Electron Oxygen Reduction Electrocatalysis. ACS Catal 2020. [DOI: 10.1021/acscatal.9b03919] [Citation(s) in RCA: 65] [Impact Index Per Article: 16.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Daniel San Roman
- Department of Material Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States
| | - Dilip Krishnamurthy
- Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States
| | - Raghav Garg
- Department of Material Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States
| | - Hasnain Hafiz
- Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States
| | - Michael Lamparski
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Noel T. Nuhfer
- Department of Material Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States
| | - Vincent Meunier
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | | | - Tzahi Cohen-Karni
- Department of Material Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States
- Department of Biomedical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States
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Yoshimura A, Lamparski M, Kharche N, Meunier V. First-principles simulation of local response in transition metal dichalcogenides under electron irradiation. Nanoscale 2018; 10:2388-2397. [PMID: 29334100 DOI: 10.1039/c7nr07024a] [Citation(s) in RCA: 20] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Electron beam irradiation by transmission electron microscopy (TEM) is a common and effective method for post-synthesis defect engineering in two-dimensional transition metal dichalcogenides (TMDs). Combining density functional theory (DFT) with relativistic scattering theory, we simulate the generation of such defects in monolayer group-VI TMDs, MoS2, WS2, MoSe2, and WSe2, focusing on two fundamental TEM-induced atomic displacement processes: chalcogen sputtering and chalcogen vacancy migration. Our calculations show that the activation energies of chalcogen sputtering depend primarily on the chalcogen species, and are smaller in selenides than in sulfides. Meanwhile, chalcogen vacancy migration activation energies hinge on the transition metal species, being smaller in TMDs containing Mo. Incorporating these energies into a relativistic, temperature-dependent cross section, we predict that, with appropriate TEM energies and temperatures, one can induce migrations in all four group-VI TMDs without simultaneously producing vacancies at a significant rate. This can allow for the formation of complicated defects and extended patterns, and thus, for the controlled manipulation of TMD crystals for targeted functionality, without the risk of substantial collateral damage.
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Affiliation(s)
- Anthony Yoshimura
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, USA.
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Garg R, Rastogi SK, Lamparski M, de la Barrera SC, Pace GT, Nuhfer NT, Hunt BM, Meunier V, Cohen-Karni T. Nanowire-Mesh-Templated Growth of Out-of-Plane Three-Dimensional Fuzzy Graphene. ACS Nano 2017; 11:6301-6311. [PMID: 28549215 DOI: 10.1021/acsnano.7b02612] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Graphene, a honeycomb sp2 hybridized carbon lattice, is a promising building block for hybrid-nanomaterials due to its electrical, mechanical, and optical properties. Graphene can be readily obtained through mechanical exfoliation, solution-based deposition of reduced graphene oxide (rGO), and chemical vapor deposition (CVD). The resulting graphene films' topology is two-dimensional (2D) surface. Recently, synthesis of three-dimensional (3D) graphitic networks supported or templated by nanoparticles, foams, and hydrogels was reported. However, the resulting graphene films lay flat on the surface, exposing 2D surface topology. Out-of-plane grown carbon nanostructures, such as vertically aligned graphene sheets (VAGS) and vertical carbon nanowalls (CNWs), are still tethered to 2D surface. 3D morphology of out-of-plane growth of graphene hybrid-nanomaterials which leverages graphene's outstanding surface-to-volume ratio has not been achieved to date. Here we demonstrate highly controlled synthesis of 3D out-of-plane single- to few-layer fuzzy graphene (3DFG) on a Si nanowire (SiNW) mesh template. By varying graphene growth conditions (CH4 partial pressure and process time), we control the size, density, and electrical properties of the NW templated 3DFG (NT-3DFG). 3DFG growth can be described by a diffusion-limited-aggregation (DLA) model. The porous NT-3DFG meshes exhibited high electrical conductivity of ca. 2350 S m-1. NT-3DFG demonstrated exceptional electrochemical functionality, with calculated specific electrochemical surface area as high as ca. 1017 m2 g-1 for a ca. 7 μm thick mesh. This flexible synthesis will inspire formation of complex hybrid-nanomaterials with tailored optical and electrical properties to be used in future applications such as sensing, and energy conversion and storage.
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Affiliation(s)
| | | | - Michael Lamparski
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute , Troy, New York 12180, United States
| | | | | | | | | | - Vincent Meunier
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute , Troy, New York 12180, United States
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Parkin WM, Balan A, Liang L, Das PM, Lamparski M, Naylor CH, Rodríguez-Manzo JA, Johnson ATC, Meunier V, Drndić M. Raman Shifts in Electron-Irradiated Monolayer MoS2. ACS Nano 2016; 10:4134-42. [PMID: 26998814 PMCID: PMC5893938 DOI: 10.1021/acsnano.5b07388] [Citation(s) in RCA: 127] [Impact Index Per Article: 15.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
We report how the presence of electron-beam-induced sulfur vacancies affects first-order Raman modes and correlate the effects with the evolution of the in situ transmission-electron microscopy two-terminal conductivity of monolayer MoS2 under electron irradiation. We observe a red-shift in the E' Raman peak and a less pronounced blue-shift in the A'1 peak with increasing electron dose. Using energy-dispersive X-ray spectroscopy and selected-area electron diffraction, we show that irradiation causes partial removal of sulfur and correlate the dependence of the Raman peak shifts with S vacancy density (a few %). This allows us to quantitatively correlate the frequency shifts with vacancy concentration, as rationalized by first-principles density functional theory calculations. In situ device current measurements show an exponential decrease in channel current upon irradiation. Our analysis demonstrates that the observed frequency shifts are intrinsic properties of the defective systems and that Raman spectroscopy can be used as a quantitative diagnostic tool to characterize MoS2-based transport channels.
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Affiliation(s)
- William M. Parkin
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Adrian Balan
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Liangbo Liang
- Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Paul Masih Das
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Michael Lamparski
- Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Carl H. Naylor
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Julio A. Rodríguez-Manzo
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - A. T. Charlie Johnson
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Vincent Meunier
- Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
- Corresponding Authors. (V. Meunier): , (M. Drndić):
| | - Marija Drndić
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Corresponding Authors. (V. Meunier): , (M. Drndić):
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