Terahertz response of monolayer and few-layer WTe2 at the nanoscale

Electron-phonon interactions at the topological edge states in single bilayer Bi(111)

An intriguing feature of two-dimensional topological insulators is the topologically protected electronic edge state, which allows one-way carrier transport without backscattering. Although this feature has strong potential applications in lossless electronics, the ideal behavior of the edge states may be fragile due to electron-phonon (e-ph) interactions at room temperatures. Using density functional perturbation theory calculations for single bilayer Bi(111) as a prototypical 2D topological insulator, we show that e-ph scattering can be a significant source of backscattering at the topological edge states. We also show that e-ph interactions strongly correlate to the dispersions of the electronic edge states. In particular, the e-ph interactions increase significantly with temperature and are much stronger at the nonlinearly dispersed edge states of native edges compared to the linearly dispersed edge states of passivated edges, causing a significant energy dissipation in the temperature range of 200-400 K. Overall, we argue that the e-ph interactions can be a crucial factor at finite temperatures in controlling the electronic transport at the topologically protected edge states.

Two-dimensional topological semimetals: an emerging candidate for terahertz detectors and on-chip integration

The importance of terahertz (THz) detection lies in its ability to provide detailed information in a non-destructive manner, making it a valuable tool across various domains including spectroscopy, communication, and security. The ongoing development of THz detectors aims to enhance their sensitivity, resolution and integration into compact and portable devices such as handheld scanners or integrated communication chips. Generally, two-dimensional (2D) materials are considered potential candidates for device miniaturization but detecting THz radiation using 2D semiconductors is generally difficult due to the ultra-small photon energy. However, this challenge is being addressed by the advent of topological semimetals (TSM) with zero-bandgap characteristics. These semimetals offer low-energy excitations in proximity to the Dirac point, which is particularly important for applications requiring a broad detection range. Their distinctive band structures with linear energy-momentum dispersion near the Fermi level also lead to high electron mobility and low effective mass. The presence of topologically protected dissipationless conducting channels and self-powered response provides a basis for low-energy integration. In order to establish paradigms for semimetal-based THz detectors, this review initially offers an analytical summary of THz detection principles. Then, the review demonstrates the distinct design of devices, the excellent performance derived from the topological surface state and unique band structures in TSM. Finally, we outline the prospective avenues for on-chip integration of TSM-based THz detectors. We believe this review can promote further research on the new generation of THz detectors and facilitate advancements in THz imaging, spectroscopy, and communication systems.

Transient Nanoscopy of Exciton Dynamics in 2D Transition Metal Dichalcogenides

The electronic and optical properties of 2D transition metal dichalcogenides are dominated by strong excitonic resonances. Exciton dynamics plays a critical role in the functionality and performance of many miniaturized 2D optoelectronic devices; however, the measurement of nanoscale excitonic behaviors remains challenging. Here, a near-field transient nanoscopy is reported to probe exciton dynamics beyond the diffraction limit. Exciton recombination and exciton-exciton annihilation processes in monolayer and bilayer MoS2 are studied as the proof-of-concept demonstration. Moreover, with the capability to access local sites, intriguing exciton dynamics near the monolayer-bilayer interface and at the MoS2 nano-wrinkles are resolved. Such nanoscale resolution highlights the potential of this transient nanoscopy for fundamental investigation of exciton physics and further optimization of functional devices.

Quantifying the thickness of WTe2 using atomic-resolution STEM simulations and supervised machine learning

For two-dimensional (2D) materials, the exact thickness of the material often dictates its physical and chemical properties. The 2D quantum material WTe2 possesses properties that vary significantly from a single layer to multiple layers, yet it has a complicated crystal structure that makes it difficult to differentiate thicknesses in atomic-resolution images. Furthermore, its air sensitivity and susceptibility to electron beam-induced damage heighten the need for direct ways to determine the thickness and atomic structure without acquiring multiple measurements or transferring samples in ambient atmosphere. Here, we demonstrate a new method to identify the thickness up to ten van der Waals layers in Td-WTe2 using atomic-resolution high-angle annular dark-field scanning transmission electron microscopy image simulation. Our approach is based on analyzing the intensity line profiles of overlapping atomic columns and building a standard neural network model from the line profile features. We observe that it is possible to clearly distinguish between even and odd thicknesses (up to seven layers), without using machine learning, by comparing the deconvoluted peak intensity ratios or the area ratios. The standard neural network model trained on the line profile features allows thicknesses to be distinguished up to ten layers and exhibits an accuracy of up to 94% in the presence of Gaussian and Poisson noise. This method efficiently quantifies thicknesses in Td-WTe2, can be extended to related 2D materials, and provides a pathway to characterize precise atomic structures, including local thickness variations and atomic defects, for few-layer 2D materials with overlapping atomic column positions.

Accelerated Nano-Optical Imaging through Sparse Sampling

The integration time and signal-to-noise ratio are inextricably linked when performing scanning probe microscopy based on raster scanning. This often yields a large lower bound on the measurement time, for example, in nano-optical imaging experiments performed using a scanning near-field optical microscope (SNOM). Here, we utilize sparse scanning augmented with Gaussian process regression to bypass the time constraint. We apply this approach to image charge-transfer polaritons in graphene residing on ruthenium trichloride (α-RuCl3) and obtain key features such as polariton damping and dispersion. Critically, nano-optical SNOM imaging data obtained via sparse sampling are in good agreement with those extracted from traditional raster scans but require 11 times fewer sampled points. As a result, Gaussian process-aided sparse spiral scans offer a major decrease in scanning time.

Ultrabroadband Terahertz Near-Field Nanospectroscopy with a HgCdTe Detector

While near-field infrared nanospectroscopy provides a powerful tool for nanoscale material characterization, broadband nanospectroscopy of elementary material excitations in the single-digit terahertz (THz) range remains relatively unexplored. Here, we study liquid-Helium-cooled photoconductive Hg1-XCdXTe (MCT) for use as a fast detector in near-field nanospectroscopy. Compared to the common T = 77 K operation, liquid-Helium cooling reduces the MCT detection threshold to ∼22 meV, improves the noise performance, and yields a response bandwidth exceeding 10 MHz. These improved detector properties have a profound impact on the near-field technique, enabling unprecedented broadband nanospectroscopy across a range of 5 to >50 THz (175 to >1750 cm-1, or <6 to 57 μm), i.e., covering what is commonly known as the "THz gap". Our approach has been implemented as a user program at the National Synchrotron Light Source II, Upton, USA, where we showcase ultrabroadband synchrotron nanospectroscopy of phonons in ZnSe (∼7.8 THz) and BaF2 (∼6.7 THz), as well as hyperbolic phonon polaritons in GeS (6-8 THz).

Infrared nano-imaging of Dirac magnetoexcitons in graphene

Magnetic fields can have profound effects on the motion of electrons in quantum materials. Two-dimensional electron systems subject to strong magnetic fields are expected to exhibit quantized Hall conductivity, chiral edge currents and distinctive collective modes referred to as magnetoplasmons and magnetoexcitons. Generating these propagating collective modes in charge-neutral samples and imaging them at their native nanometre length scales have thus far been experimentally elusive. Here we visualize propagating magnetoexciton polaritons at their native length scales and report their magnetic-field-tunable dispersion in near-charge-neutral graphene. Imaging these collective modes and their associated nano-electro-optical responses allows us to identify polariton-modulated optical and photo-thermal electric effects at the sample edges, which are the most pronounced near charge neutrality. Our work is enabled by innovations in cryogenic near-field optical microscopy techniques that allow for the nano-imaging of the near-field responses of two-dimensional materials under magnetic fields up to 7 T. This nano-magneto-optics approach allows us to explore and manipulate magnetopolaritons in specimens with low carrier doping via harnessing high magnetic fields.

Graphene Nano-Optics in the Terahertz Gap

Graphene nano-optics at terahertz (THz) frequencies (ν) is theoretically anticipated to feature extraordinary effects. However, interrogating such phenomena is nontrivial, since the atomically thin graphene dimensionally mismatches the THz radiation wavelength reaching hundreds of micrometers. Greater challenges happen in the THz gap (0.1-10 THz) wherein light sources are scarce. To surpass these barriers, we use a nanoscope illuminated by a highly brilliant and tunable free-electron laser to image the graphene nano-optical response from 1.5 to 6.0 THz. For ν < 2 THz, we observe a metal-like behavior of graphene, which screens optical fields akin to noble metals, since this excitation range approaches its charge relaxation frequency. At 3.8 THz, plasmonic resonances cause a field-enhancement effect (FEE) that improves the graphene imaging power. Moreover, we show that the metallic behavior and the FEE are tunable upon electrical doping, thus providing further control of these graphene nano-optical properties in the THz gap.

Ambipolar charge-transfer graphene plasmonic cavities

Plasmon polaritons in van der Waals materials hold promise for various photonics applications^1-4. The deterministic imprinting of spatial patterns of high carrier density in plasmonic cavities and nanoscale circuitry can enable the realization of advanced nonlinear nanophotonic⁵ and strong light-matter interaction platforms⁶. Here we demonstrate an oxidation-activated charge transfer strategy to program ambipolar low-loss graphene plasmonic structures. By covering graphene with transition-metal dichalcogenides and subsequently oxidizing the transition-metal dichalcogenides into transition-metal oxides, we activate charge transfer rooted in the dissimilar work functions between transition-metal oxides and graphene. Nano-infrared imaging reveals ambipolar low-loss plasmon polaritons at the transition-metal-oxide/graphene interfaces. Further, by inserting dielectric van der Waals spacers, we can precisely control the electron and hole densities induced by oxidation-activated charge transfer and achieve plasmons with a near-intrinsic quality factor. Using this strategy, we imprint plasmonic cavities with laterally abrupt doping profiles with nanoscale precision and demonstrate plasmonic whispering-gallery resonators based on suspended graphene encapsulated in transition-metal oxides.

Imaging the Terahertz Nanoscale Conductivity of Polycrystalline CsPbBr3 Perovskite Thin Films

Terahertz (THz) radiation is a valuable tool to investigate the electronic properties of lead halide perovskites (LHPs). However, attaining high-resolution information remains elusive, as the diffraction-limited spatial resolution (∼300 μm) of conventional THz methods prevents a direct analysis of microscopic effects. Here, we employ THz scattering scanning near-field optical microscopy (THz-sSNOM) for nanoscale imaging of cesium lead bromide (CsPbBr₃) thin films down to the single grain level at 600 GHz. Adopting a scattering model, we are able to derive the local THz nanoscale conductivity in a contact-free fashion. Increased THz near-field signals at CsPbBr₃ grain boundaries complemented by correlative transmission electron microscopy-energy-dispersive X-ray spectroscopy elemental analysis point to the formation of halide vacancies (V_Br) and Pb-Pb bonds, which induce charge carrier trapping and can lead to nonradiative recombination. Our study establishes THz-sSNOM as a powerful THz nanoscale analysis platform for thin-film semiconductors such as LHPs.

Magnetic induced terahertz modulation characteristics based on ferromagnetic nematic liquid crystals

In recent years, solid state terahertz (THz) modulators have obtained rapid progress with the widespread use of two-dimensional (2D) materials in the field of THz; however, challenges remain in preparing flexible THz modulators. In this study, flexible ferromagnetic nematic materials were prepared by doping thermotropic nematic liquid crystals 5CB into magnetic fluids, and the influence of water was reduced by a self-made cyclic olefin copolymer (COC) microfluidic chip. THz modulation characteristics of magnetic fluid and ferromagnetic nematic liquid crystal (FNLC) under the induction of external magnetic field were compared using a THz time domain spectroscopy system. Under the action of a 91 mT magnetic field, the magnetic fluid has a maximum modulation depth (MD) of 54%. Under the same magnetic field, the maximum MD of the FNLC materials increase to 78% because of the rearrangement of Fe₃O₄ nanoparticles induced by the topological defect of the liquid crystal. We demonstrate that the magneto-optical effect is significantly enhanced in the ferromagnetic nematic liquid crystal hybrid system. This strategy of doping thermotropic nematic liquid crystals to enhance the magneto-optical effect has great potential for THz filtering, modulation, and sensing applications.

2D Material Infrared Photonics and Plasmonics

Two-dimensional (2D) materials including graphene, transition metal dichalcogenides, black phosphorus, MXenes, and semimetals have attracted extensive and widespread interest over the past years for their many intriguing properties and phenomena, underlying physics, and great potential for applications. The vast library of 2D materials and their heterostructures provides a diverse range of electrical, photonic, mechanical, and chemical properties with boundless opportunities for photonics and plasmonic devices. The infrared (IR) regime, with wavelengths across 0.78 μm to 1000 μm, has particular technological significance in industrial, military, commercial, and medical settings while facing challenges especially in the limit of materials. Here, we present a comprehensive review of the varied approaches taken to leverage the properties of the 2D materials for IR applications in photodetection and sensing, light emission and modulation, surface plasmon and phonon polaritons, non-linear optics, and Smith-Purcell radiation, among others. The strategies examined include the growth and processing of 2D materials, the use of various 2D materials like semiconductors, semimetals, Weyl-semimetals and 2D heterostructures or mixed-dimensional hybrid structures, and the engineering of light-matter interactions through nanophotonics, metasurfaces, and 2D polaritons. Finally, we give an outlook on the challenges in realizing high-performance and ambient-stable devices and the prospects for future research and large-scale commercial applications.

Investigating active area dependent high performing photoresponse through thin films of Weyl Semimetal WTe2

WTe₂ is one of the wonder layered materials, displays interesting overlapping of electron-hole pairs, opening of the surface bandgap, anisotropy in its crystal structure and very much sought appealing material for room temperature broadband photodection applications. Here we report the photoresponse of WTe₂ thin films and microchannel devices fabricated on silicon nitride substrates. A clear sharp rise in photocurrent observed under the illumination of visible (532 nm) and NIR wavelengths (1064 nm). The observed phoresponse is very convincing and repetitive for ON /OFF cycles of laser light illumination. The channel length dependence of photocurrent is noticed for few hundred nanometers to micrometers. The photocurrent, rise & decay times, responsivity and detectivity are studied using different channel lengths. Strikingly microchannel gives few orders of greater responsivity compared to larger active area investigated here. The responsivity and detectivity are observed as large as 29 A/W and 3.6 × 10⁸ Jones respectively. The high performing photodetection properties indicate that WTe₂ can be used as a broad band material for future optoelectronic applications.

Two-Dimensional Van Der Waals Topological Materials: Preparation, Properties, and Device Applications

Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including topological insulators and topological semimetals, which combine atomically flat 2D layers and topologically nontrivial band structures, have attracted increasing attention in condensed-matter physics and materials science. These easily cleavable and integrated TMs provide the ideal platform for exploring topological physics in the 2D limit, where new physical phenomena may emerge, and represent a potential to control and investigate exotic properties and device applications in nanoscale topological phases. However, multifaced efforts are still necessary, which is the prerequisite for the practical application of 2D vdW TMs. Herein, this review focuses on the preparation, properties, and device applications of 2D vdW TMs. First, three common preparation strategies for 2D vdW TMs are summarized, including single crystal exfoliation, chemical vapor deposition, and molecular beam epitaxy. Second, the origin and regulation of various properties of 2D vdW TMs are introduced, involving electronic properties, transport properties, optoelectronic properties, thermoelectricity, ferroelectricity, and magnetism. Third, some device applications of 2D vdW TMs are presented, including field-effect transistors, memories, spintronic devices, and photodetectors. Finally, some significant challenges and opportunities for the practical application of 2D vdW TMs in 2D topological electronics are briefly addressed.

Rapid simulations of hyperspectral near-field images of three-dimensional heterogeneous surfaces - part II

The modeling of the near-field interaction in the scattering-type scanning near-field optical microscope (s-SNOM) is rapidly advancing, although an accurate yet versatile modeling framework that can be easily adapted to various complex situations is still lacking. In this work, we propose a time-efficient numerical scheme in the quasi-electrostatic limit to capture the tip-sample interaction in the near field. This method considers an extended tip geometry, which is a significant advantage compared to the previously reported method based on the point-dipole approximation. Using this formalism, we investigate, among others, nontrivial questions such as uniaxial and biaxial anisotropy in the near-field interaction, the relationship between various experimental parameters (e.g. tip radius, tapping amplitude, etc.), and the tip-dependent spatial resolution. The demonstrated method further sheds light on the understanding of the contrast mechanism in s-SNOM imaging and spectroscopy, while also representing a valuable platform for future quantitative analysis of the experimental observations.