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Qi J, Zhao Y, Zhang Y, Yang G, Huang H, Lyu H, Shao B, Zhang J, Li J, Zhu T, Yu G, Wei H, Zhou S, Shen B, Wang S. Full electrical manipulation of perpendicular exchange bias in ultrathin antiferromagnetic film with epitaxial strain. Nat Commun 2024; 15:4734. [PMID: 38830907 PMCID: PMC11148026 DOI: 10.1038/s41467-024-49214-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/04/2023] [Accepted: 05/28/2024] [Indexed: 06/05/2024] Open
Abstract
Achieving effective manipulation of perpendicular exchange bias effect remains an intricate endeavor, yet it stands a significance for the evolution of ultra-high capacity and energy-efficient magnetic memory and logic devices. A persistent impediment to its practical applications is the reliance on external magnetic fields during the current-induced switching of exchange bias in perpendicularly magnetized structures. This study elucidates the achievement of a full electrical manipulation of the perpendicular exchange bias in the multilayers with an ultrathin antiferromagnetic layer. Owing to the anisotropic epitaxial strain in the 2-nm-thick IrMn3 layer, the considerable exchange bias effect is clearly achieved at room temperature. Concomitantly, a specific global uncompensated magnetization manifests in the IrMn3 layer, facilitating the switching of the irreversible portion of the uncompensated magnetization. Consequently, the perpendicular exchange bias can be manipulated by only applying pulsed current, notably independent of the presence of any external magnetic fields.
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Affiliation(s)
- Jie Qi
- Anhui Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University, Hefei, 230601, China
| | - Yunchi Zhao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
| | - Yi Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China
| | - Guang Yang
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China
| | - He Huang
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China
| | - Haochang Lyu
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China
| | - Bokai Shao
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China
| | - Jingyan Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, China
| | - Jialiang Li
- Spallation Neutron Source Science Center, Dongguan, 523803, China
| | - Tao Zhu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Spallation Neutron Source Science Center, Dongguan, 523803, China
| | - Guoqiang Yu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Hongxiang Wei
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Shiming Zhou
- Anhui Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University, Hefei, 230601, China
| | - Baogen Shen
- Anhui Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University, Hefei, 230601, China
| | - Shouguo Wang
- Anhui Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University, Hefei, 230601, China.
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2
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Shi J, Arpaci S, Lopez-Dominguez V, Sangwan VK, Mahfouzi F, Kim J, Athas JG, Hamdi M, Aygen C, Arava H, Phatak C, Carpentieri M, Jiang JS, Grayson MA, Kioussis N, Finocchio G, Hersam MC, Khalili Amiri P. Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312008. [PMID: 38501999 DOI: 10.1002/adma.202312008] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/12/2023] [Revised: 02/11/2024] [Indexed: 03/20/2024]
Abstract
Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures are not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here are shown three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn3, sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes.
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Affiliation(s)
- Jiacheng Shi
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Sevdenur Arpaci
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, 60208, USA
- Applied Physics Program, Northwestern University, Evanston, IL, 60208, USA
| | - Victor Lopez-Dominguez
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, 60208, USA
- Institute of Advanced Materials (INAM), Universitat Jaume I, Castellón, 12006, Spain
| | - Vinod K Sangwan
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Farzad Mahfouzi
- Department of Physics and Astronomy, California State University Northridge, Northridge, CA, 91330, USA
| | - Jinwoong Kim
- Department of Physics and Astronomy, California State University Northridge, Northridge, CA, 91330, USA
| | - Jordan G Athas
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Mohammad Hamdi
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Can Aygen
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Hanu Arava
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Charudatta Phatak
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Mario Carpentieri
- Department of Electrical and Information Engineering, Politecnico di Bari, Bari, 70125, Italy
| | - Jidong S Jiang
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Matthew A Grayson
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, 60208, USA
- Applied Physics Program, Northwestern University, Evanston, IL, 60208, USA
| | - Nicholas Kioussis
- Department of Physics and Astronomy, California State University Northridge, Northridge, CA, 91330, USA
| | - Giovanni Finocchio
- Department of Mathematical and Computer Sciences, Physical Sciences and Earth Sciences, University of Messina, Messina, 98166, Italy
| | - Mark C Hersam
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, 60208, USA
- Applied Physics Program, Northwestern University, Evanston, IL, 60208, USA
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
- Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
| | - Pedram Khalili Amiri
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, 60208, USA
- Applied Physics Program, Northwestern University, Evanston, IL, 60208, USA
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3
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Chen H, Liu L, Zhou X, Meng Z, Wang X, Duan Z, Zhao G, Yan H, Qin P, Liu Z. Emerging Antiferromagnets for Spintronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310379. [PMID: 38183310 DOI: 10.1002/adma.202310379] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2023] [Revised: 12/18/2023] [Indexed: 01/08/2024]
Abstract
Antiferromagnets constitute promising contender materials for next-generation spintronic devices with superior stability, scalability, and dynamics. Nevertheless, the perception of well-established ferromagnetic spintronics underpinned by spontaneous magnetization seemed to indicate the inadequacy of antiferromagnets for spintronics-their compensated magnetization has been perceived to result in uncontrollable antiferromagnetic order and subtle magnetoelectronic responses. However, remarkable advancements have been achieved in antiferromagnetic spintronics in recent years, with consecutive unanticipated discoveries substantiating the feasibility of antiferromagnet-centered spintronic devices. It is emphasized that, distinct from ferromagnets, the richness in complex antiferromagnetic crystal structures is the unique and essential virtue of antiferromagnets that can open up their endless possibilities of novel phenomena and functionality for spintronics. In this Perspective, the recent progress in antiferromagnetic spintronics is reviewed, with a particular focus on that based on several kinds of antiferromagnets with special antiferromagnetic crystal structures. The latest developments in efficiently manipulating antiferromagnetic order, exploring novel antiferromagnetic physical responses, and demonstrating prototype antiferromagnetic spintronic devices are discussed. An outlook on future research directions is also provided. It is hoped that this Perspective can serve as guidance for readers who are interested in this field and encourage unprecedented studies on antiferromagnetic spintronic materials, phenomena, and devices.
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Affiliation(s)
- Hongyu Chen
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Li Liu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Xiaorong Zhou
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Ziang Meng
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Xiaoning Wang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Zhiyuan Duan
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Guojian Zhao
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Han Yan
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Peixin Qin
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Zhiqi Liu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
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Masuda H, Seki T, Ohe JI, Nii Y, Masuda H, Takanashi K, Onose Y. Room temperature chirality switching and detection in a helimagnetic MnAu 2 thin film. Nat Commun 2024; 15:1999. [PMID: 38453940 PMCID: PMC10920692 DOI: 10.1038/s41467-024-46326-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/23/2022] [Accepted: 02/22/2024] [Indexed: 03/09/2024] Open
Abstract
Helimagnetic structures, in which the magnetic moments are spirally ordered, host an internal degree of freedom called chirality corresponding to the handedness of the helix. The chirality seems quite robust against disturbances and is therefore promising for next-generation magnetic memory. While the chirality control was recently achieved by the magnetic field sweep with the application of an electric current at low temperature in a conducting helimagnet, problems such as low working temperature and cumbersome control and detection methods have to be solved in practical applications. Here we show chirality switching by electric current pulses at room temperature in a thin-film MnAu2 helimagnetic conductor. Moreover, we have succeeded in detecting the chirality at zero magnetic fields by means of simple transverse resistance measurement utilizing the spin Berry phase in a bilayer device composed of MnAu2 and a spin Hall material Pt. These results may pave the way to helimagnet-based spintronics.
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Affiliation(s)
- Hidetoshi Masuda
- Institute for Materials Research, Tohoku University, Sendai, Japan.
| | - Takeshi Seki
- Institute for Materials Research, Tohoku University, Sendai, Japan.
| | - Jun-Ichiro Ohe
- Department of Physics, Toho University, Funabashi, Japan
| | - Yoichi Nii
- Institute for Materials Research, Tohoku University, Sendai, Japan
- PRESTO, Japan Science and Technology Agency, Kawaguchi, Japan
| | - Hiroto Masuda
- Institute for Materials Research, Tohoku University, Sendai, Japan
| | - Koki Takanashi
- Institute for Materials Research, Tohoku University, Sendai, Japan
- Center for Science and Innovation in Spintronics, Tohoku University, Sendai, Japan
- Advanced Science Research Center, Japan Atomic Energy Agency, Ibaraki, Japan
| | - Yoshinori Onose
- Institute for Materials Research, Tohoku University, Sendai, Japan.
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5
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Hadámek T, Jørstad NP, de Orio RL, Goes W, Selberherr S, Sverdlov V. A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices. MICROMACHINES 2023; 14:1581. [PMID: 37630117 PMCID: PMC10456936 DOI: 10.3390/mi14081581] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/18/2023] [Revised: 07/30/2023] [Accepted: 08/07/2023] [Indexed: 08/27/2023]
Abstract
We employ a fully three-dimensional model coupling magnetization, charge, spin, and temperature dynamics to study temperature effects in spin-orbit torque (SOT) magnetoresistive random access memory (MRAM). SOTs are included by considering spin currents generated through the spin Hall effect. We scale the magnetization parameters with the temperature. Numerical experiments show several time scales for temperature dynamics. The relatively slow temperature increase, after a rapid initial temperature rise, introduces an incubation time to the switching. Such a behavior cannot be reproduced with a constant temperature model. Furthermore, the critical SOT switching voltage is significantly reduced by the increased temperature. We demonstrate this phenomenon for switching of field-free SOT-MRAM. In addition, with an external-field-assisted switching, the critical SOT voltage shows a parabolic decrease with respect to the voltage applied across the magnetic tunnel junction (MTJ) of the SOT-MRAM cell, in agreement with recent experimental data.
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Affiliation(s)
- Tomáš Hadámek
- Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic, Institute for Microelectronics, TU Wien, Gußhausstraße 27-29, A-1040 Wien, Austria (V.S.)
| | - Nils Petter Jørstad
- Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic, Institute for Microelectronics, TU Wien, Gußhausstraße 27-29, A-1040 Wien, Austria (V.S.)
| | | | | | - Siegfried Selberherr
- Institute for Microelectronics, TU Wien, Gußhausstraße 27-29, A-1040 Wien, Austria
| | - Viktor Sverdlov
- Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic, Institute for Microelectronics, TU Wien, Gußhausstraße 27-29, A-1040 Wien, Austria (V.S.)
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Zheng Z, Gu Y, Zhang Z, Zhang X, Zhao T, Li H, Ren L, Jia L, Xiao R, Zhou HA, Zhang Q, Shi S, Zhang Y, Zhao C, Shen L, Zhao W, Chen J. Coexistence of Magnon-Induced and Rashba-Induced Unidirectional Magnetoresistance in Antiferromagnets. NANO LETTERS 2023. [PMID: 37418477 DOI: 10.1021/acs.nanolett.3c01082] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/09/2023]
Abstract
Unidirectional magnetoresistance (UMR) has been intensively studied in ferromagnetic systems, which is mainly induced by spin-dependent and spin-flip electron scattering. Yet, UMR in antiferromagnetic (AFM) systems has not been fully understood to date. In this work, we reported UMR in a YFeO3/Pt heterostructure where YFeO3 is a typical AFM insulator. Magnetic-field dependence and temperature dependence of transport measurements indicate that magnon dynamics and interfacial Rashba splitting are two individual origins for AFM UMR, which is consistent with the UMR theory in ferromagnetic systems. We further established a comprehensive theoretical model that incorporates micromagnetic simulation, density functional theory calculation, and the tight-binding model, which explain the observed AFM UMR phenomenon well. Our work sheds light on the intrinsic transport property of the AFM system and may facilitate the development of AFM spintronic devices.
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Affiliation(s)
- Zhenyi Zheng
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Youdi Gu
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Zhizhong Zhang
- MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Xiwen Zhang
- Department of Mechanical Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Tieyang Zhao
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Huihui Li
- Beijing Superstring Academy of Memory Technology, Beijing 100176, China
| | - Lizhu Ren
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Lanxin Jia
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Rui Xiao
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Heng-An Zhou
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Qihan Zhang
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Shu Shi
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Yue Zhang
- MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Chao Zhao
- Beijing Superstring Academy of Memory Technology, Beijing 100176, China
| | - Lei Shen
- Department of Mechanical Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Weisheng Zhao
- MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
- Chongqing Research Institute, National University of Singapore, Chongqing 401120, China
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Strain solves switch hitch for an antiferromagnetic material. Nature 2022; 607:452-453. [PMID: 35859191 DOI: 10.1038/d41586-022-01941-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
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Arekapudi SSPK, Bülz D, Ganss F, Samad F, Luo C, Zahn DRT, Lenz K, Salvan G, Albrecht M, Hellwig O. Highly Tunable Magnetic and Magnetotransport Properties of Exchange Coupled Ferromagnet/Antiferromagnet-Based Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2021; 13:59497-59510. [PMID: 34870974 DOI: 10.1021/acsami.1c18017] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Antiferromagnets (AFMs) with zero net magnetization are proposed as active elements in future spintronic devices. Depending on the critical film thickness and measurement temperature, bimetallic Mn-based alloys and transition-metal oxide-based AFMs can host various coexisting ordered, disordered, and frustrated AFM phases. Such coexisting phases in the exchange coupled ferromagnetic (FM)/AFM-based heterostructures can result in unusual magnetic and magnetotransport phenomena. Here, we integrate chemically disordered AFM γ-IrMn3 thin films with coexisting AFM phases into complex exchange coupled MgO(001)/γ-Ni3Fe/γ-IrMn3/γ-Ni3Fe/CoO heterostructures and study the structural, magnetic, and magnetotransport properties in various magnetic field cooling states. In particular, we unveil the impact of rotating the relative orientation of the thermally disordered and reversible AFM moments with respect to the irreversible AFM moments on the magnetic and magnetotransport properties of the exchange coupled heterostructures. We further reveal that the persistence of thermally disordered and reversible AFM moments is crucial for achieving highly tunable magnetic properties and multilevel magnetoresistance states. We anticipate that the presented approach and the heterostructure architecture can be utilized in future spintronic devices to manipulate the thermally disordered and reversible AFM moments at the nanoscale.
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Affiliation(s)
| | - Daniel Bülz
- Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany
| | - Fabian Ganss
- Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany
| | - Fabian Samad
- Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Chen Luo
- Helmholtz-Zentrum Berlin für Materialien und Energie, Albert-Einstein-Strasse 15, 12489 Berlin, Germany
- Institute of Experimental Physics of Functional Spin Systems, Technical University Munich, James-Franck-Str. 1, 85748 Garching b. München, Germany
| | - Dietrich R T Zahn
- Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany
| | - Kilian Lenz
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Georgeta Salvan
- Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany
| | - Manfred Albrecht
- Institute of Physics, University of Augsburg, Universitätsstraße 1, 86159 Augsburg, Germany
| | - Olav Hellwig
- Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
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