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Frezza F, Sánchez-Grande A, Canola S, Lamancová A, Mutombo P, Chen Q, Wäckerlin C, Ernst KH, Muntwiler M, Zema N, Di Giovannantonio M, Nachtigallová D, Jelínek P. Controlling On-Surface Photoactivity: The Impact of π-Conjugation in Anhydride-Functionalized Molecules on a Semiconductor Surface. Angew Chem Int Ed Engl 2024; 63:e202405983. [PMID: 38699982 DOI: 10.1002/anie.202405983] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2024] [Revised: 05/02/2024] [Accepted: 05/03/2024] [Indexed: 05/05/2024]
Abstract
On-surface synthesis has become a prominent method for growing low-dimensional carbon-based nanomaterials on metal surfaces. However, the necessity of decoupling organic nanostructures from metal substrates to exploit their properties requires either transfer methods or new strategies to perform reactions directly on inert surfaces. The use of on-surface light-induced reactions directly on semiconductor/insulating surfaces represents an alternative approach to address these challenges. Here, exploring the photochemical activity of different organic molecules on a SnSe semiconductor surface under ultra-high vacuum, we present a novel on-surface light-induced reaction. The selective photodissociation of the anhydride group is observed, releasing CO and CO2. Moreover, we rationalize the relationship between the photochemical activity and the π-conjugation of the molecular core. The different experimental behaviour of two model anhydrides was elucidated by theoretical calculations, showing how the molecular structure influences the distribution of the excited states. Our findings open new pathways for on-surface synthesis directly on technologically relevant substrates.
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Affiliation(s)
- Federico Frezza
- Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, 16200, Prague 6, Czech Republic
- Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague, Břehová 78/7, 11519, Prague 1, Czech Republic
| | - Ana Sánchez-Grande
- Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, 16200, Prague 6, Czech Republic
| | - Sofia Canola
- Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, 16200, Prague 6, Czech Republic
| | - Anna Lamancová
- Institute of Organic Chemistry and Biochemistry, Czech Academy of Sciences, Flemingovo námĕstí 542/2, 160 00, Prague, Czech Republic
| | - Pingo Mutombo
- Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, 16200, Prague 6, Czech Republic
| | - Qifan Chen
- Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, 16200, Prague 6, Czech Republic
| | - Christian Wäckerlin
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015, Lausanne, Switzerland
- Paul Scherrer Institute (PSI), 5232, Villigen PSI, Switzerland
| | - Karl-Heinz Ernst
- Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, 16200, Prague 6, Czech Republic
- Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600, Dübendorf, Switzerland
| | | | - Nicola Zema
- CNR - Istituto di Struttura della Materia (CNR-ISM), via Fosso del Cavaliere 100, 00133, Rome, Italy
| | - Marco Di Giovannantonio
- CNR - Istituto di Struttura della Materia (CNR-ISM), via Fosso del Cavaliere 100, 00133, Rome, Italy
| | - Dana Nachtigallová
- Institute of Organic Chemistry and Biochemistry, Czech Academy of Sciences, Flemingovo námĕstí 542/2, 160 00, Prague, Czech Republic
- IT4Innovations, VŠB-Technical University of Ostrava, 17. listopadu 2172/15, 708 00, Ostrava-Poruba, Czech Republic
| | - Pavel Jelínek
- Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, 16200, Prague 6, Czech Republic
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Gao W, Zhi G, Zhou M, Niu T. Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2311317. [PMID: 38712469 DOI: 10.1002/smll.202311317] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2023] [Revised: 03/14/2024] [Indexed: 05/08/2024]
Abstract
The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.
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Affiliation(s)
- Wenjin Gao
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | | | - Miao Zhou
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | - Tianchao Niu
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
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Yamazaki K, Goto S, Yoshino S, Gubarevich A, Yoshida K, Kato H, Yamamoto M. Surface defect healing in annealing from nanoporous carbons to nanoporous graphenes. Phys Chem Chem Phys 2023. [PMID: 38019669 DOI: 10.1039/d3cp04921c] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/01/2023]
Abstract
Nanoporous graphene (NPG) materials have the pronounced electrochemical stability of the seamless graphene structures developed over the 3D space. We revisited the Raman spectra of nanoporous carbons (NPCs) synthesized using θ-/γ-Al2O3 templates and NPGs converted from NPCs by annealing at 1800 °C to identify the type and density of defects. We found that both the NPCs and NPGs mostly consist of single-layered graphene with a few single vacancies and Stone-Wales defects. The density of vacancy defect per hexagon in the graphene sheet is estimated to be 10-2 for NPCs, while the annealing reduced the value to 10-3-10-4 for NPGs. This supports the outstanding chemical and electrochemical stability of the novel porous carbon materials.
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Affiliation(s)
- Kaoru Yamazaki
- RIKEN Center for Advanced Photonics, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan.
| | - Shunsuke Goto
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
| | - Shunya Yoshino
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
| | - Anna Gubarevich
- Institute of Innovative Research, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8550, Japan
| | - Katsumi Yoshida
- Institute of Innovative Research, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8550, Japan
| | - Hideki Kato
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
| | - Masanori Yamamoto
- Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
- Department of Chemical Science and Engineering, Tokyo Institute of Technology, Ookayama 2-12-1, Meguro, Tokyo 152-8550, Japan.
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