Current-induced Néel order switching facilitated by magnetic phase transition

Sign Reversal of Hall Conductivity in Polycrystalline FeRh Films via the Topological Hall Effect in the Antiferromagnetic Phase

The intrinsic Berry curvature in ferromagnetic (FM) materials significantly influences Hall conductivity during the antiferromagnetic (AFM)-to-FM phase transition, as demonstrated through the anomalous Hall effect (AHE). First-principles calculations indicate negligible spin Hall conductivity in FeRh materials in the AFM phase due to time-reversal symmetry breaking. To date, the contribution of the Berry curvature to the spin Hall effect remains unexamined in the context of AHE measurements. This study presents the temperature-dependent spin and carrier transport properties of FeRh thin films across AFM-to-FM transitions. In the AFM phase, a nonzero AHE signal is observed and even reverses its sign when the film transitions to the FM phase (above T = 175 K). This nonzero AHE signal contrasts with predictions from density functional theory calculations. Notably, an additional Hall conductivity contribution (topological Hall effect), attributed to the spin Berry curvature, results in an overall weak negative Hall conductivity in the AFM phase.

Abnormal Magnetic Phase Transition in Mixed-Phase (110)-Oriented FeRh Films on Al2O3 Substrates via the Anomalous Nernst Effect

Iron rhodium (FeRh) undergoes a first-order anti-ferromagnetic to ferromagnetic phase transition above its Curie temperature. By measuring the anomalous Nernst effect (ANE) in (110)-oriented FeRh films on Al2O3 substrates, the ANE thermopower over a temperature range of 100-350 K is observed, with similar magnetic transport behaviors observed for in-plane magnetization (IM) and out-of-plane magnetization (PM) configurations. The temperature-dependent magnetization-magnetic field strength (M-H) curves revealed that the ANE voltage is proportional to the magnetization of the material, but additional features magnetic textures not shown in the M-H curves remained intractable. In particular, a sign reversal occurred for the ANE thermopower signal near zero field in the mixed-magnetic-phase films at low temperatures, which is attributed to the diamagnetic properties of the Al2O3 substrate. Finite element method simulations associated with the Heisenberg spin model and Landau-Lifshitz-Gilbert equation strongly supported the abnormal heat transport behavior from the Al2O3 substrate during the experimentally observed magnetic phase transition for the IM and PM configurations. The results demonstrate that FeRh films on an Al2O3 substrate exhibit unusual behavior compared to other ferromagnetic materials, indicating their potential for use in novel applications associated with practical spintronics device design, neuromorphic computing, and magnetic memory.

Acoustic Wave-Induced FeRh Magnetic Phase Transition and Its Application in Antiferromagnetic Pattern Writing and Erasing

We explore the FeRh magnetic phase transition (MPT) and magnetic phase domain (MPD) with the introduction of surface acoustic waves (SAWs). The effects of the SAW pulses with different pulse widths and powers on resistance-temperature loops are investigated, revealing that the SAW can reduce the thermal hysteresis. Meanwhile, the SAW-induced comb-like antiferromagnetic (AFM) phase domains are observed. By changing the pulse width and SAW frequency, we further realize a writing-erasing process of the different comb-like AFM phase domains in the mixed-phase regime of the cooling transition branch. Resistance measurements also display the repeated SAW writing-erasing and the nonvolatile characteristic clearly. MPT paths are measured to demonstrate that short SAW pulses induce isothermal MPT and write magnetic phase patterns via the dynamic strain, whereas long SAW pulses erase patterns via the acoustothermal effect. The Preisach model is introduced to model the FeRh MPT under the SAW pulses, and the calculated results correspond well with our experiments, which reveals the SAW-induced energy modulation promotes FeRh MPT. COMSOL simulations of the SAW strain field also support our results. Our study not only can be used to reduce the thermal hysteresis but also extends the application of the SAW as a tool to write and erase AFM patterns for spintronics and magnonics.

Emerging Antiferromagnets for Spintronics

Antiferromagnets constitute promising contender materials for next-generation spintronic devices with superior stability, scalability, and dynamics. Nevertheless, the perception of well-established ferromagnetic spintronics underpinned by spontaneous magnetization seemed to indicate the inadequacy of antiferromagnets for spintronics-their compensated magnetization has been perceived to result in uncontrollable antiferromagnetic order and subtle magnetoelectronic responses. However, remarkable advancements have been achieved in antiferromagnetic spintronics in recent years, with consecutive unanticipated discoveries substantiating the feasibility of antiferromagnet-centered spintronic devices. It is emphasized that, distinct from ferromagnets, the richness in complex antiferromagnetic crystal structures is the unique and essential virtue of antiferromagnets that can open up their endless possibilities of novel phenomena and functionality for spintronics. In this Perspective, the recent progress in antiferromagnetic spintronics is reviewed, with a particular focus on that based on several kinds of antiferromagnets with special antiferromagnetic crystal structures. The latest developments in efficiently manipulating antiferromagnetic order, exploring novel antiferromagnetic physical responses, and demonstrating prototype antiferromagnetic spintronic devices are discussed. An outlook on future research directions is also provided. It is hoped that this Perspective can serve as guidance for readers who are interested in this field and encourage unprecedented studies on antiferromagnetic spintronic materials, phenomena, and devices.

Solar-Powered Switch of Antiferromagnetism/Ferromagnetism in Flexible Spintronics

The flexible electronics have application prospects in many fields, including as wearable devices and in structural detection. Spintronics possess the merits of a fast response and high integration density, opening up possibilities for various applications. However, the integration of miniaturization on flexible substrates is impeded inevitably due to the high Joule heat from high current density (1012 A/m2). In this study, a prototype flexible spintronic with device antiferromagnetic/ferromagnetic heterojunctions is proposed. The interlayer coupling strength can be obviously altered by sunlight soaking via direct photo-induced electron doping. With the assistance of a small magnetic field (±125 Oe), the almost 180° flip of magnetization is realized. Furthermore, the magnetoresistance changes (15~29%) of flexible spintronics on fingers receiving light illumination are achieved successfully, exhibiting the wearable application potential. Our findings develop flexible spintronic sensors, expanding the vision for the novel generation of photovoltaic/spintronic devices.

Intrinsic Nonlinear Hall Detection of the Néel Vector for Two-Dimensional Antiferromagnetic Spintronics

The respective unique merit of antiferromagnets and two-dimensional (2D) materials in spintronic applications inspires us to exploit 2D antiferromagnetic spintronics. However, the detection of the Néel vector in 2D antiferromagnets remains a great challenge because the measured signals usually decrease significantly in the 2D limit. Here we propose that the Néel vector of 2D antiferromagnets can be efficiently detected by the intrinsic nonlinear Hall (INH) effect which exhibits unexpected significant signals. As a specific example, we show that the INH conductivity of the monolayer manganese chalcogenides MnX (X=S, Se, Te) can reach the order of nm·mA/V^{2}, which is orders of magnitude larger than experimental values of paradigmatic antiferromagnetic spintronic materials. The INH effect can be accurately controlled by shifting the chemical potential around the band edge, which is experimentally feasible via electric gating or charge doping. Moreover, we explicitly demonstrate its 2π-periodic dependence on the Néel vector orientation based on an effective k·p model. Our findings enable flexible design schemes and promising material platforms for spintronic memory device applications based on 2D antiferromagnets.

High-speed metamagnetic switching of FeRh through Joule heating

Due to its proximity to room temperature and demonstrated high degree of temperature tunability, FeRh's metamagnetic ordering transition is attractive for novel high-performance computing devices seeking to use magnetism as the state variable. We demonstrate electrical control of the antiferromagnetic-to-ferromagnetic transition via Joule heating in FeRh wires. The magnetic transition of FeRh is accompanied by a change in resistivity, which can be probed electrically and allows for integration into switching devices. Finite element simulations based on abrupt state transition within each domain result in a globally smooth transition that agrees with the experimental findings and provides insight into the thermodynamics involved. We measure a 150 K decrease in transition temperature with currents up to 60 mA, limited only by the dimensions of the device. The sizeable shift in transition temperature scales with current density and wire length, suggesting the absolute resistance and heat dissipation of the substrate are also important. The FeRh phase change is evaluated by pulsed I-V using a variety of bias conditions. We demonstrate high speed (~ ns) memristor-like behavior and report device performance parameters such as switching speed and power consumption that compare favorably with state-of-the-art phase change memristive technologies.

Efficient Tuning of the Spin-Orbit Torque via the Magnetic Phase Transition of FeRh

The understanding and control of the spin-orbit torque (SOT) are central to antiferromagnetic spintronics. Despite the fact that a giant SOT efficiency has been achieved in numerous materials, its efficient tuning in a given material has not been established. Materials with magnetic phase transitions (MPTs) offer a new perspective, as the SOT efficiency may vary significantly for the different magnetic orderings across the transition, and the transition itself can be readily tuned by various control parameters. This work reports that the SOT efficiency of a FeRh-based perpendicular magnetized heterostructure can be significantly tuned by varying the temperature across the MPT. The SOT efficiency exhibits a temperature hysteresis associated with the first-order nature of the MPT, and its value in the ferromagnetic phase is seen to be enhanced by ∼450%, simply by a lowering of temperature to drive FeRh into the antiferromagnetic phase. Furthermore, current-induced magnetization switching can be achieved without an assistant magnetic field for both ferromagnetic and antiferromagnetic FeRh, with a low critical switching current density for the latter. These results not only directly establish FeRh as an efficient spin generator but also present a strategy to dynamically tune SOT via varying the temperature across MPTs.