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Barrier J, Kim M, Kumar RK, Xin N, Kumaravadivel P, Hague L, Nguyen E, Berdyugin AI, Moulsdale C, Enaldiev VV, Prance JR, Koppens FHL, Gorbachev RV, Watanabe K, Taniguchi T, Glazman LI, Grigorieva IV, Fal'ko VI, Geim AK. One-dimensional proximity superconductivity in the quantum Hall regime. Nature 2024; 628:741-745. [PMID: 38658686 DOI: 10.1038/s41586-024-07271-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/24/2023] [Accepted: 03/05/2024] [Indexed: 04/26/2024]
Abstract
Extensive efforts have been undertaken to combine superconductivity and the quantum Hall effect so that Cooper-pair transport between superconducting electrodes in Josephson junctions is mediated by one-dimensional edge states1-6. This interest has been motivated by prospects of finding new physics, including topologically protected quasiparticles7-9, but also extends into metrology and device applications10-13. So far it has proven challenging to achieve detectable supercurrents through quantum Hall conductors2,3,6. Here we show that domain walls in minimally twisted bilayer graphene14-18 support exceptionally robust proximity superconductivity in the quantum Hall regime, allowing Josephson junctions to operate in fields close to the upper critical field of superconducting electrodes. The critical current is found to be non-oscillatory and practically unchanging over the entire range of quantizing fields, with its value being limited by the quantum conductance of ballistic, strictly one-dimensional, electronic channels residing within the domain walls. The system described is unique in its ability to support Andreev bound states at quantizing fields and offers many interesting directions for further exploration.
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Affiliation(s)
- Julien Barrier
- Department of Physics and Astronomy, University of Manchester, Manchester, UK.
- National Graphene Institute, University of Manchester, Manchester, UK.
| | - Minsoo Kim
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
- Department of Applied Physics, Kyung Hee University, Yong-in, South Korea
| | - Roshan Krishna Kumar
- ICFO - Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona, Spain
| | - Na Xin
- Department of Physics and Astronomy, University of Manchester, Manchester, UK.
- Department of Chemistry, Zhejiang University, Hangzhou, China.
| | - P Kumaravadivel
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
- National Graphene Institute, University of Manchester, Manchester, UK
| | - Lee Hague
- National Graphene Institute, University of Manchester, Manchester, UK
| | - E Nguyen
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
- National Graphene Institute, University of Manchester, Manchester, UK
| | - A I Berdyugin
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
- National Graphene Institute, University of Manchester, Manchester, UK
| | - Christian Moulsdale
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
- National Graphene Institute, University of Manchester, Manchester, UK
| | - V V Enaldiev
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
- National Graphene Institute, University of Manchester, Manchester, UK
| | - J R Prance
- Department of Physics, Lancaster University, Lancaster, UK
| | - F H L Koppens
- ICFO - Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona, Spain
| | - R V Gorbachev
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
- National Graphene Institute, University of Manchester, Manchester, UK
| | - K Watanabe
- National Institute for Materials Science, Tsukuba, Japan
| | - T Taniguchi
- National Institute for Materials Science, Tsukuba, Japan
| | - L I Glazman
- Department of Physics, Yale University, New Haven, CT, USA
| | - I V Grigorieva
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
- National Graphene Institute, University of Manchester, Manchester, UK
| | - V I Fal'ko
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
- National Graphene Institute, University of Manchester, Manchester, UK
- Henry Royce Institute for Advanced Materials, University of Manchester, Manchester, UK
| | - A K Geim
- Department of Physics and Astronomy, University of Manchester, Manchester, UK.
- National Graphene Institute, University of Manchester, Manchester, UK.
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2
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Lee KW, Lee CE. Gapless edge states localized to odd/even layers of AA'-stacked honeycomb multilayers with staggered AB-sublattice potentials. Sci Rep 2023; 13:16915. [PMID: 37805558 PMCID: PMC10560242 DOI: 10.1038/s41598-023-44084-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2023] [Accepted: 10/03/2023] [Indexed: 10/09/2023] Open
Abstract
In honeycomb multilayers with staggered AB-sublattice potentials, we predict gapless edge states localized to either of the odd and the even layers for the AA[Formula: see text] stacking order in which the sublattice-pseudospin polarizations of adjacent layers are antiparallel. Gaps in the projected layer-pseudospin spectrum suppress interlayer hopping between odd and even layers. The layer-valley Chern number corresponding to the edge states was obtained by decomposing the occupied state into two layer-pseudospin sectors by using a projected layer-pseudospin operator. For the AB[Formula: see text] stacking, the sublattice-pseudospin polarizations of adjacent layers are antiparallel, but the layer-pseudospin spectrum gap closes at the interface of the topologically different states, leading to gapped edge states. For the AA and AB stackings where the sublattice-pseudospin polarizations of the adjacent layers are parallel, the gapless edge states corresponding to quantum valley Hall states are evenly distributed across the layers.
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Affiliation(s)
- Kyu Won Lee
- Department of Physics, Korea University, Seoul, 02841, Republic of Korea
| | - Cheol Eui Lee
- Department of Physics, Korea University, Seoul, 02841, Republic of Korea.
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Potočnik T, Burton O, Reutzel M, Schmitt D, Bange JP, Mathias S, Geisenhof FR, Weitz RT, Xin L, Joyce HJ, Hofmann S, Alexander-Webber JA. Fast Twist Angle Mapping of Bilayer Graphene Using Spectroscopic Ellipsometric Contrast Microscopy. NANO LETTERS 2023. [PMID: 37289669 DOI: 10.1021/acs.nanolett.3c00619] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Twisted bilayer graphene provides an ideal solid-state model to explore correlated material properties and opportunities for a variety of optoelectronic applications, but reliable, fast characterization of the twist angle remains a challenge. Here we introduce spectroscopic ellipsometric contrast microscopy (SECM) as a tool for mapping twist angle disorder in optically resonant twisted bilayer graphene. We optimize the ellipsometric angles to enhance the image contrast based on measured and calculated reflection coefficients of incident light. The optical resonances associated with van Hove singularities correlate well to Raman and angle-resolved photoelectron emission spectroscopy, confirming the accuracy of SECM. The results highlight the advantages of SECM, which proves to be a fast, nondestructive method for characterization of twisted bilayer graphene over large areas, unlocking process, material, and device screening and cross-correlative measurement potential for bilayer and multilayer materials.
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Affiliation(s)
- Teja Potočnik
- Department of Engineering, University of Cambridge, 9 JJ Thompson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Oliver Burton
- Department of Engineering, University of Cambridge, 9 JJ Thompson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Marcel Reutzel
- I. Physikalisches Institut, Georg-August-Universität Göttingen, 37077 Göttingen, Germany
| | - David Schmitt
- I. Physikalisches Institut, Georg-August-Universität Göttingen, 37077 Göttingen, Germany
| | - Jan Philipp Bange
- I. Physikalisches Institut, Georg-August-Universität Göttingen, 37077 Göttingen, Germany
| | - Stefan Mathias
- I. Physikalisches Institut, Georg-August-Universität Göttingen, 37077 Göttingen, Germany
| | - Fabian R Geisenhof
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, Munich 80539, Germany
| | - R Thomas Weitz
- I. Physikalisches Institut, Georg-August-Universität Göttingen, 37077 Göttingen, Germany
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, Munich 80539, Germany
| | - Linyuan Xin
- Department of Engineering, University of Cambridge, 9 JJ Thompson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Hannah J Joyce
- Department of Engineering, University of Cambridge, 9 JJ Thompson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Stephan Hofmann
- Department of Engineering, University of Cambridge, 9 JJ Thompson Avenue, Cambridge CB3 0FA, United Kingdom
| | - Jack A Alexander-Webber
- Department of Engineering, University of Cambridge, 9 JJ Thompson Avenue, Cambridge CB3 0FA, United Kingdom
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Geisenhof FR, Winterer F, Seiler AM, Lenz J, Zhang F, Weitz RT. Impact of Electric Field Disorder on Broken-Symmetry States in Ultraclean Bilayer Graphene. NANO LETTERS 2022; 22:7378-7385. [PMID: 36113049 DOI: 10.1021/acs.nanolett.2c02119] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Bilayer graphene (BLG) has multiple internal degrees of freedom and a constant density of states down to the charge neutrality point when trigonal warping is ignored. Consequently, it is susceptible to various competing ground states. However, a coherent experimental determination of the ground state has been challenging due to the interaction-disorder interplay. Here we present an extensive transport study in a series of dually gated freestanding BLG devices and identify the layer-antiferromagnet as the ground state with a continuous strength across all devices. This strength correlates with the width of the state in the electric field. We systematically identify electric-field disorder─spatial variations in the interlayer potential difference─as the main source responsible for the observations. Our results pinpoint for the first time the importance of electric-field disorder on spontaneous symmetry breaking in BLG and solve a long-standing debate on its ground state. The electric-field disorder should be universal to all 2D materials.
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Affiliation(s)
- Fabian R Geisenhof
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, Munich 80539, Germany
| | - Felix Winterer
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, Munich 80539, Germany
| | - Anna M Seiler
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, Munich 80539, Germany
- 1st Physical Institute, Faculty of Physics, University of Göttingen, Friedrich-Hund-Platz 1, Göttingen 37077, Germany
| | - Jakob Lenz
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, Munich 80539, Germany
| | - Fan Zhang
- Department of Physics, University of Texas at Dallas, Richardson, Texas 75080, United States
| | - R Thomas Weitz
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, Munich 80539, Germany
- Center for Nanoscience (CeNS), Schellingstrasse 4, Munich 80799, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstrasse 4, Munich 80799, Germany
- 1st Physical Institute, Faculty of Physics, University of Göttingen, Friedrich-Hund-Platz 1, Göttingen 37077, Germany
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