1
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Dwij V, De B, Kunwar HS, Rana S, Velpula P, Shukla DK, Gupta MK, Mittal R, Pal S, Briscoe J, Sathe VG. Optical Control of In-Plane Domain Configuration and Domain Wall Motion in Ferroelectric and Ferroelastic Materials. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38902888 DOI: 10.1021/acsami.4c02901] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/22/2024]
Abstract
The sensitivity of ferroelectric domain walls to external stimuli makes them functional entities in nanoelectronic devices. Specifically, optically driven domain reconfiguration with in-plane polarization is advantageous and thus is highly sought. Here, we show the existence of in-plane polarized subdomains imitating a single domain state and reversible optical control of its domain wall movement in a single-crystal of ferroelectric BaTiO3. Similar optical control in the domain configuration of nonpolar ferroelastic material indicates that long-range ferroelectric polarization is not essential for the optical control of domain wall movement. Instead, flexoelectricity is found to be an essential ingredient for the optical control of the domain configuration, and hence, ferroelastic materials would be another possible candidate for nanoelectronic device applications.
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Affiliation(s)
- Vivek Dwij
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | - Binoy De
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | | | - Sumesh Rana
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | - Praveen Velpula
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | - Dinesh K Shukla
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
| | - Mayanak Kumar Gupta
- Solid State Physics Division, Bhabha Atomic Research Center, Mumbai 400 085, India
- Homi Bhabha National Institute, Anushaktinagar, Mumbai 400094, India
| | - Ranjan Mittal
- Solid State Physics Division, Bhabha Atomic Research Center, Mumbai 400 085, India
- Homi Bhabha National Institute, Anushaktinagar, Mumbai 400094, India
| | - Subhajit Pal
- School of Engineering & Materials Science, Queen Mary University of London, London E1 4NS, United Kingdom
| | - Joe Briscoe
- School of Engineering & Materials Science, Queen Mary University of London, London E1 4NS, United Kingdom
| | - Vasant G Sathe
- UGC-DAE Consortium for Scientific Research, Indore 452001, India
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2
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Yan S, Mao W, Sun W, Li Y, Sun H, Yang J, Hao B, Guo W, Nian L, Gu Z, Wang P, Nie Y. Superconductivity in Freestanding Infinite-Layer Nickelate Membranes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2402916. [PMID: 38847344 DOI: 10.1002/adma.202402916] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2024] [Revised: 06/01/2024] [Indexed: 06/19/2024]
Abstract
The observation of superconductivity in infinite-layer nickelates has attracted significant attention due to its potential as a new platform for exploring high-Tc superconductivity. However, thus far, superconductivity has only been observed in epitaxial thin films, which limits the manipulation capabilities and modulation methods compared to two-dimensional exfoliated materials. Given the exceptionally giant strain tunability and stacking capability of freestanding membranes, separating superconducting nickelates from the as-grown substrate is a novel way to engineer the superconductivity and uncover the underlying physics. Herein, this work reports the synthesis of the superconducting freestanding La0.8Sr0.2NiO2 membranes (T c zero = 10.6 K ${T}_{\mathrm{c}}^{\mathrm{zero}}\ =\ 10.6\ \mathrm{K}$ ), emphasizing the crucial roles of the interface engineering in the precursor phase film growth and the quick transfer process in achieving superconductivity. This work offers a new versatile platform for investigating superconductivity in nickelates, such as the pairing symmetry via constructing Josephson tunneling junctions and higher Tc values via high-pressure experiments.
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Affiliation(s)
- Shengjun Yan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Wei Mao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Wenjie Sun
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Yueying Li
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Haoying Sun
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Jiangfeng Yang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Bo Hao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Wei Guo
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Leyan Nian
- Suzhou Laboratory, Suzhou, 215125, P. R. China
| | - Zhengbin Gu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Peng Wang
- Department of Physics, University of Warwick, Coventry, CV4 7AL, United Kingdom
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
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3
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Yu C, Cheng J, Zhang Y, Liu Z, Liu X, Jia C, Li X, Yang J. Two-Dimensional Os 2Se 3 Nanosheet: A Ferroelectric Metal with Room-Temperature Ferromagnetism. J Phys Chem Lett 2024; 15:4218-4223. [PMID: 38602298 DOI: 10.1021/acs.jpclett.4c00524] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/12/2024]
Abstract
Two-dimensional (2D) ferroelectric metals (FEMs) possess intriguing characteristics, such as unconventional superconductivity and the nonlinear anomalous Hall effect. However, their occurrence is exceedingly rare due to mutual repulsion between ferroelectricity and metallicity. In addition, further incorporating other features like ferromagnetism into FEMs to enhance their functionalities poses a significantly greater challenge. Here, via first-principles calculations, we demonstrate a case of an FEM that features a coexistence of room-temperature ferromagnetism, ferroelectricity, and metallicity in a thermodynamically stable 2D Os2Se3. It presents a vertical electric polarization of 3.00 pC/m that exceeds those of most FEMs and a moderate polarization switching barrier of 0.22 eV per formula unit. Moreover, 2D Os2Se3 exhibits robust ferromagnetism (Curie temperature TC ≈ 527 K) and a sizable magnetic anisotropy energy (-30.87 meV per formula unit). Furthermore, highly magnetization-dependent electrical conductivity is revealed, indicative of strong magnetoelectric coupling. Berry curvature calculation suggests that the FEM might exhibit nontrivial band topology.
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Affiliation(s)
- Cuiju Yu
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jing Cheng
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yuzhuo Zhang
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Zhao Liu
- Department of Materials Science and Engineering, Monash University, Victoria 3800, Australia
| | - Xiaofeng Liu
- School of Physics, Hefei University of Technology, Hefei, Anhui 230026, China
| | - Chao Jia
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xingxing Li
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
| | - Jinlong Yang
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
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4
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Nian L, Sun H, Wang Z, Xu D, Hao B, Yan S, Li Y, Zhou J, Deng Y, Hao Y, Nie Y. Sr 4Al 2O 7: A New Sacrificial Layer with High Water Dissolution Rate for the Synthesis of Freestanding Oxide Membranes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307682. [PMID: 38238890 DOI: 10.1002/adma.202307682] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2023] [Revised: 12/18/2023] [Indexed: 02/01/2024]
Abstract
Freestanding perovskite oxide membranes have drawn great attention recently since they offer exceptional structural tunability and stacking ability, providing new opportunities in fundamental research and potential device applications in silicon-based semiconductor technology. Among different types of sacrificial layers, the (Ca, Sr, Ba)3Al2O6 compounds are most widely used since they can be dissolved in water and prepare high-quality perovskite oxide membranes with clean and sharp surfaces and interfaces; However, the typical transfer process takes a long time (up to hours) in obtaining millimeter-size freestanding membranes, let alone realize wafer-scale samples with high yield. Here, a new member of the SrO-Al2O3 family, Sr4Al2O7 is introduced, and its high dissolution rate, ≈10 times higher than that of Sr3Al2O6 is demonstrated. The high-dissolution-rate of Sr4Al2O7 is most likely related to the more discrete Al-O networks and higher concentration of water-soluble Sr-O species in this compound. This work significantly facilitates the preparation of freestanding membranes and sheds light on the integration of multifunctional perovskite oxides in practical electronic devices.
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Affiliation(s)
- Leyan Nian
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
- Suzhou Laboratory, Suzhou, 215125, P. R. China
| | - Haoying Sun
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Zhichao Wang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Duo Xu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Bo Hao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Shengjun Yan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Yueying Li
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Jian Zhou
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Yu Deng
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Yufeng Hao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
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5
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Varshney S, Choo S, Thompson L, Yang Z, Shah J, Wen J, Koester SJ, Mkhoyan KA, McLeod AS, Jalan B. Hybrid Molecular Beam Epitaxy for Single-Crystalline Oxide Membranes with Binary Oxide Sacrificial Layers. ACS NANO 2024; 18:6348-6358. [PMID: 38314696 DOI: 10.1021/acsnano.3c11192] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
The advancement in thin-film exfoliation for synthesizing oxide membranes has led to possibilities for creating artificially assembled heterostructures with structurally and chemically incompatible materials. The sacrificial layer method is a promising approach to exfoliate as-grown films from a compatible material system, allowing for their integration with dissimilar materials. Nonetheless, the conventional sacrificial layers often possess an intricate stoichiometry, thereby constraining their practicality and adaptability, particularly when considering techniques such as molecular beam epitaxy (MBE). This is where easy-to-grow binary alkaline-earth-metal oxides with a rock salt crystal structure are useful. These oxides, which include (Mg, Ca, Sr, Ba)O, can be used as a sacrificial layer covering a much broader range of lattice parameters compared to conventional sacrificial layers and are easily dissolvable in deionized water. In this study, we show the epitaxial growth of the single-crystalline perovskite SrTiO3 (STO) on sacrificial layers consisting of crystalline SrO, BaO, and Ba1-xCaxO films, employing a hybrid MBE method. Our results highlight the rapid (≤5 min) dissolution of the sacrificial layer when immersed in deionized water, facilitating the fabrication of millimeter-sized STO membranes. Using high-resolution X-ray diffraction, atomic-force microscopy, scanning transmission electron microscopy, impedance spectroscopy, and scattering-type near-field optical microscopy (SNOM), we demonstrate single-crystalline STO membranes with bulk-like intrinsic dielectric properties. The employment of alkaline earth metal oxides as sacrificial layers is likely to simplify membrane synthesis, particularly with MBE, thus expanding the research and application possibilities.
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Affiliation(s)
- Shivasheesh Varshney
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Sooho Choo
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Liam Thompson
- School of Physics and Astronomy, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Zhifei Yang
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minnesota 55455, United States
- School of Physics and Astronomy, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Jay Shah
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Jiaxuan Wen
- Department of Electrical and Computer Engineering, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Steven J Koester
- Department of Electrical and Computer Engineering, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - K Andre Mkhoyan
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Alexander S McLeod
- School of Physics and Astronomy, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Bharat Jalan
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minnesota 55455, United States
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6
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Li Y, Chen Y, Fang H, Shi J, Xue Y, Ma R, Zhou J, Yao N, Zhang J, Zhang X. Electron-beam writing of a relaxor ferroelectric polymer for multiplexing information storage and encryption. NANOSCALE 2023; 16:180-187. [PMID: 37999642 DOI: 10.1039/d3nr04503j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/25/2023]
Abstract
To meet the strong demand for high-level encryption security, several efforts have been focused on developing new encryption techniques with high density and data security. Herein we employed a template-free electron beam lithography (EBL) technique to write various nanopatterns on poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CTFE)) films and applied it to electron-beam/electric multiplexing memory. Furthermore, electron beams can arbitrarily tailor down the domain structure evolutions and dipole directions, as proved by a combination of AFM-IR and PFM. Finally, our devices could function concurrently as an electron-beam write-only-memory (EB-WOM) and FeRAM, where the information could be encoded with the metastable phase evolutions from the ferroelectric phase to the paraelectric phase and variable bi-level ferroelectric signals. Our systematic study provides an inspiring idea for the design of information encryption devices with high-security requirements in flexible electronic fields.
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Affiliation(s)
- Yongshuang Li
- Institute of Advanced Magnetic Materials and International Research Center for EM Metamaterials, College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, China.
| | - Yingxin Chen
- Institute of Advanced Magnetic Materials and International Research Center for EM Metamaterials, College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, China.
| | - Huigui Fang
- Institute of Advanced Magnetic Materials and International Research Center for EM Metamaterials, College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, China.
| | - Jingchao Shi
- Institute of Advanced Magnetic Materials and International Research Center for EM Metamaterials, College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, China.
| | - Yichen Xue
- Institute of Advanced Magnetic Materials and International Research Center for EM Metamaterials, College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, China.
| | - Rongjie Ma
- Institute of Advanced Magnetic Materials and International Research Center for EM Metamaterials, College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, China.
| | - Jingtao Zhou
- Institute of Advanced Magnetic Materials and International Research Center for EM Metamaterials, College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, China.
| | - Ni Yao
- Research Center for Intelligent Sensing, Zhejiang Lab, Hangzhou 311121, China
| | - Jian Zhang
- Institute of Advanced Magnetic Materials and International Research Center for EM Metamaterials, College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, China.
| | - Xuefeng Zhang
- Institute of Advanced Magnetic Materials and International Research Center for EM Metamaterials, College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, China.
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7
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Wu Q, Wang K, Simpson A, Hao Y, Wang J, Li D, Hong X. Electrode Effect on Ferroelectricity in Free-Standing Membranes of PbZr 0.2Ti 0.8O 3. ACS NANOSCIENCE AU 2023; 3:482-490. [PMID: 38144704 PMCID: PMC10740143 DOI: 10.1021/acsnanoscienceau.3c00032] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/01/2023] [Revised: 09/30/2023] [Accepted: 10/02/2023] [Indexed: 12/26/2023]
Abstract
We report the effects of screening capacity, surface roughness, and interfacial epitaxy of the bottom electrodes on the polarization switching, domain wall (DW) roughness, and ferroelectric Curie temperature (TC) of PbZr0.2Ti0.8O3 (PZT)-based free-standing membranes. Singe crystalline 10-50 nm (001) PZT and PZT/La0.67Sr0.33MnO3 (LSMO) membranes are prepared on Au, correlated oxide LSMO, and two-dimensional (2D) semiconductor MoS2 base layers. Switching the polarization of PZT yields nonvolatile current modulation in the MoS2 channel at room temperature, with an on/off ratio of up to 2 × 105 and no apparent decay for more than 3 days. Piezoresponse force microscopy studies show that the coercive field Ec for the PZT membranes varies from 0.75 to 3.0 MV cm-1 on different base layers and exhibits strong polarization asymmetry. The PZT/LSMO membranes exhibit significantly smaller Ec, with the samples transferred on LSMO showing symmetric Ec of about -0.26/+0.28 MV cm-1, smaller than that of epitaxial PZT films. The DW roughness exponent ζ points to 2D random bond disorder dominated DW roughening (ζ = 0.31) at room temperature. Upon thermal quench at progressively higher temperatures, ζ values for PZT membranes on Au and LSMO approach the theoretical value for 1D random bond disorder (ζ = 2/3), while samples on MoS2 exhibits thermal roughening (ζ = 1/2). The PZT membranes on Au, LSMO, and MoS2 show TC of about 763 ± 12, 725 ± 25, and 588 ± 12 °C, respectively, well exceeding the bulk value. Our study reveals the complex interplay between the electrostatic and mechanical boundary conditions in determining ferroelectricity in free-standing PZT membranes, providing important material parameters for the functional design of PZT-based flexible nanoelectronics.
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Affiliation(s)
- Qiuchen Wu
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
| | - Kun Wang
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
| | - Alyssa Simpson
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
| | - Yifei Hao
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
| | - Jia Wang
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
| | - Dawei Li
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
| | - Xia Hong
- Department
of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska−Lincoln, Lincoln, Nebraska 68588-0299, United
States
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8
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Long J, Wang T, Tan C, Chen J, Zhou Y, Lun Y, Zhang Y, Zhong X, Wu Y, Song H, Ouyang X, Hong J, Wang J. Self-Recovery of a Buckling BaTiO 3 Ferroelectric Membrane. ACS APPLIED MATERIALS & INTERFACES 2023; 15:55984-55990. [PMID: 37993976 DOI: 10.1021/acsami.3c12730] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/24/2023]
Abstract
The characteristic of self-recovery holds significant implications for upholding performance stability within flexible electronic devices following the release of mechanical deformation. Herein, the dynamics of self-recovery in a buckling inorganic membrane is studied via in situ scanning probe microscopy technology. The experimental results demonstrate that the ultimate deformation ratio of the buckling BaTiO3 ferroelectric membrane is up to 88%, which is much higher than that of the buckling SrTiO3 dielectric membrane (49%). Combined with piezoresponse force microscopy and phase-field simulations, we find that ferroelectric domain transformation accompanies the whole process of buckling and self-recovery of the ferroelectric membrane, i.e., the presence of the nano-c domain not only releases part of the elastic energy of the membrane but also reduces the interface mismatch of the a/c domain, which encourages the buckling ferroelectric membrane to have excellent self-recovery properties. It is conceivable that the evolution of ferroelectric domains will play a greater role in the regulation of the mechanical properties of ferroelectric membranes and flexible devices.
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Affiliation(s)
- Jiemei Long
- National-Provincial Laboratory of Special Function Thin Film Materials, School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105, China
| | - Tingjun Wang
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Congbing Tan
- National-Provincial Laboratory of Special Function Thin Film Materials, School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105, China
- Hunan Provincial Key Laboratory of Intelligent Sensors and Advanced Sensor Materials, School of Physics and Electronics, Hunan University of Science and Technology, Xiangtan 411201, Hunan, China
| | - Jing Chen
- National-Provincial Laboratory of Special Function Thin Film Materials, School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105, China
| | - Yu Zhou
- National-Provincial Laboratory of Special Function Thin Film Materials, School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105, China
| | - Yingzhuo Lun
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Yi Zhang
- School of Physics, Sun Yat-sen University, Guangzhou, Guangdong 510275, China
| | - Xiangli Zhong
- National-Provincial Laboratory of Special Function Thin Film Materials, School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105, China
| | - Yiwei Wu
- National-Provincial Laboratory of Special Function Thin Film Materials, School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105, China
| | - Hongjia Song
- National-Provincial Laboratory of Special Function Thin Film Materials, School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105, China
| | - Xiaoping Ouyang
- National-Provincial Laboratory of Special Function Thin Film Materials, School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105, China
| | - Jiawang Hong
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Jinbin Wang
- National-Provincial Laboratory of Special Function Thin Film Materials, School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105, China
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9
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Salles P, Machado P, Yu P, Coll M. Chemical synthesis of complex oxide thin films and freestanding membranes. Chem Commun (Camb) 2023; 59:13820-13830. [PMID: 37921594 DOI: 10.1039/d3cc03030j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/04/2023]
Abstract
Oxides offer unique physical and chemical properties that inspire rapid advances in materials chemistry to design and nanoengineer materials compositions and implement them in devices for a myriad of applications. Chemical deposition methods are gaining attention as a versatile approach to develop complex oxide thin films and nanostructures by properly selecting compatible chemical precursors and designing an accurate cost-effective thermal treatment. Here, upon describing the basics of chemical solution deposition (CSD) and atomic layer deposition (ALD), some examples of the growth of chemically-deposited functional complex oxide films that can have applications in energy and electronics are discussed. To go one step further, the suitability of these techniques is presented to prepare freestanding complex oxides which can notably broaden their applications. Finally, perspectives on the use of chemical methods to prepare future materials are given.
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Affiliation(s)
- Pol Salles
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) Campus UAB, 08193 Bellaterra (Barcelona), Spain.
| | - Pamela Machado
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) Campus UAB, 08193 Bellaterra (Barcelona), Spain.
| | - Pengmei Yu
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) Campus UAB, 08193 Bellaterra (Barcelona), Spain.
| | - Mariona Coll
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) Campus UAB, 08193 Bellaterra (Barcelona), Spain.
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10
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Yang G, Dong G, Zhang B, Xu X, Zhao Y, Hu Z, Liu M. Twisted Integration of Complex Oxide Magnetoelectric Heterostructures via Water-Etching and Transfer Process. NANO-MICRO LETTERS 2023; 16:19. [PMID: 37975933 PMCID: PMC10656404 DOI: 10.1007/s40820-023-01233-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2023] [Accepted: 10/09/2023] [Indexed: 11/19/2023]
Abstract
HIGHLIGHTS The (001)-oriented ferromagnetic La0.67Sr0.33MnO3 films are stuck onto the (011)-oriented ferroelectric single-crystal 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 substrate with 0° and 45° twist angle. By applying a 7.2 kV cm-1 electric field, the coexistence of uniaxial and fourfold in-plane magnetic anisotropy is observed in 45° Sample, while a typical uniaxial anisotropy is found in 0° Sample. Manipulating strain mode and degree that can be applied to epitaxial complex oxide thin films have been a cornerstone of strain engineering. In recent years, lift-off and transfer technology of the epitaxial oxide thin films have been developed that enabled the integration of heterostructures without the limitation of material types and crystal orientations. Moreover, twisted integration would provide a more interesting strategy in artificial magnetoelectric heterostructures. A specific twist angle between the ferroelectric and ferromagnetic oxide layers corresponds to the distinct strain regulation modes in the magnetoelectric coupling process, which could provide some insight in to the physical phenomena. In this work, the La0.67Sr0.33MnO3 (001)/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (011) (LSMO/PMN-PT) heterostructures with 45º and 0º twist angles were assembled via water-etching and transfer process. The transferred LSMO films exhibit a fourfold magnetic anisotropy with easy axis along LSMO < 110 >. A coexistence of uniaxial and fourfold magnetic anisotropy with LSMO [110] easy axis is observed for the 45° Sample by applying a 7.2 kV cm-1 electrical field, significantly different from a uniaxial anisotropy with LSMO [100] easy axis for the 0° Sample. The fitting of the ferromagnetic resonance field reveals that the strain coupling generated by the 45° twist angle causes different lattice distortion of LSMO, thereby enhancing both the fourfold and uniaxial anisotropy. This work confirms the twisting degrees of freedom for magnetoelectric coupling and opens opportunities for fabricating artificial magnetoelectric heterostructures.
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Affiliation(s)
- Guannan Yang
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Guohua Dong
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China.
| | - Butong Zhang
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Xu Xu
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Yanan Zhao
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Zhongqiang Hu
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China.
| | - Ming Liu
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
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11
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Sun Q, Yuan M, Wu R, Miao Y, Yuan Y, Jing Y, Qu Y, Liu X, Sun J. A Light-Programmed Rewritable Lattice-Mediated Multistate Memory for High-Density Data Storage. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2302318. [PMID: 37165732 DOI: 10.1002/adma.202302318] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/13/2023] [Revised: 05/08/2023] [Indexed: 05/12/2023]
Abstract
Mainstream non-volatile memory (NVM) devices based on floating gate structures or phase-change/ferroelectric materials face inherent limitations that compromise their suitability for long-term data storage. To address this challenge, a novel memory device based on light-programmed lattice engineering of thin rhenium disulfide (ReS2 ) flakes is proposed. By inducing sulfur vacancies in the ReS2 channel through light illumination, the device's electrical conductivity is modified accordingly and multiple conductance states for data storage therefore are generated. The device exhibits more than 128 distinct states with linearly increasing conductance, corresponding to a sevenfold increase in storage density. Through further optimization to achieve atomic-level precision in defect creation, it is possible to achieve even higher storage densities. These states are extremely stable in vacuum or inert ambient showing long retention of >10 years, while they can be erased upon exposure to the air. The ReS2 memory device can maintain its stability over multiple program-erase operation cycles and shows superior wavelength discrimination capability for incident light in the range of 405-785 nm. This device represents a significant contribution to NVM technology by offering the ability to store information in multistate memory and enabling filter-free color image recorder applications.
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Affiliation(s)
- Qi Sun
- School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Meili Yuan
- School of Physics, Shandong University, Jinan, Shandong, 250100, China
| | - Rongqi Wu
- School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Yuan Miao
- School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Yahua Yuan
- School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Yumei Jing
- School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Yuanyuan Qu
- School of Physics, Shandong University, Jinan, Shandong, 250100, China
| | - Xiaochi Liu
- School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Jian Sun
- School of Physics and Electronics, Central South University, Changsha, 410083, China
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Sheeraz M, Jung MH, Kim YK, Lee NJ, Jeong S, Choi JS, Jo YJ, Cho S, Kim IW, Kim YM, Kim S, Ahn CW, Yang SM, Jeong HY, Kim TH. Freestanding Oxide Membranes for Epitaxial Ferroelectric Heterojunctions. ACS NANO 2023. [PMID: 37406362 DOI: 10.1021/acsnano.3c01974] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/07/2023]
Abstract
Since facile routes to fabricate freestanding oxide membranes were previously established, tremendous efforts have been made to further improve their crystallinity, and fascinating physical properties have been also reported in heterointegrated freestanding membranes. Here, we demonstrate our synthetic recipe to manufacture highly crystalline perovskite SrRuO3 freestanding membranes using new infinite-layer perovskite SrCuO2 sacrificial layers. To accomplish this, SrRuO3/SrCuO2 bilayer thin films are epitaxially grown on SrTiO3 (001) substrates, and the topmost SrRuO3 layer is chemically exfoliated by etching the SrCuO2 template layer. The as-exfoliated SrRuO3 membranes are mechanically transferred to various nonoxide substrates for the subsequent BaTiO3 film growth. Finally, freestanding heteroepitaxial junctions of ferroelectric BaTiO3 and metallic SrRuO3 are realized, exhibiting robust ferroelectricity. Intriguingly, the enhancement of piezoelectric responses is identified in freestanding BaTiO3/SrRuO3 heterojunctions with mixed ferroelectric domain states. Our approaches will offer more opportunities to develop heteroepitaxial freestanding oxide membranes with high crystallinity and enhanced functionality.
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Affiliation(s)
- Muhammad Sheeraz
- Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 44610, Republic of Korea
| | - Min-Hyoung Jung
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Yoon Ki Kim
- Department of Physics, Sogang University, Seoul 04107, Republic of Korea
| | - Nyun-Jong Lee
- Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 44610, Republic of Korea
| | - Seyeop Jeong
- Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 44610, Republic of Korea
| | - Jin San Choi
- Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 44610, Republic of Korea
| | - Yong Jin Jo
- Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 44610, Republic of Korea
| | - Shinuk Cho
- Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 44610, Republic of Korea
| | - Ill Won Kim
- Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 44610, Republic of Korea
| | - Young-Min Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Sanghoon Kim
- Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 44610, Republic of Korea
| | - Chang Won Ahn
- Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 44610, Republic of Korea
| | - Sang Mo Yang
- Department of Physics, Sogang University, Seoul 04107, Republic of Korea
| | - Hu Young Jeong
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Tae Heon Kim
- Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 44610, Republic of Korea
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Chen D, Tan X, Shen B, Jiang J. Erasable Domain Wall Current-Dominated Resistive Switching in BiFeO 3 Devices with an Oxide-Metal Interface. ACS APPLIED MATERIALS & INTERFACES 2023; 15:25041-25048. [PMID: 37184983 DOI: 10.1021/acsami.3c02710] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
Electric transport in the charged domain wall (CDW) region has emerged as a promising phenomenon for the development of next-generation ferro-resistive memory with ultrahigh data storage density. However, accurately measuring the conductivity of CDWs induced by polarization reversal remains challenging due to the polarization modulation of the Schottky barrier at the thin film-electrode interface, which could partially contribute to the collected "on" current of the device. Here, we propose carefully selecting an electrode that can suppress the effect of interfacial barrier modulation induced by polarization reversal, allowing the collected current mainly from the conductive CDWs. The experiment was conducted on epitaxial BiFeO3(001) thin-film devices with vertical and horizontal geometries. Piezo-response force microscopy scanning showed the local polarization experienced 180° rotation to form CDWs under the vertical electric field. However, devices with SrRuO3 epitaxial top electrodes still exhibit an interfacial barrier-dominated diode behavior, with the "on" current proportional to the electrode area. To identify the CDW current, more interfacial defects were introduced by the deposition of Pt top electrodes, which significantly enhanced charge injection for the compensation of the reversed polarization driven by the electric field, leading to the suppressed polarization modulation of the Schottky barrier height. It was observed that the current flow through Pt electrodes is significantly lower compared to that of SRO electrodes and appears to be primarily influenced by the electrode perimeter instead of the electrode area, indicating CDW-dominated conduction behavior in these devices. Planar nanodevices were further fabricated to support the quantitative investigation of the Pt electrode size-dependent "on" current with a linear fit of the current magnitude versus the CDW cross-sectional area. This work constitutes an essential part of understanding the role of the CDW current in ferro-resistive memory devices.
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Affiliation(s)
- Dongfang Chen
- Department of Mechanical Engineering & Mechanics, Drexel University, Philadelphia, Pennsylvania 19104-2875, United States
| | - Xiaojun Tan
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P. R. China
| | - Bowen Shen
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P. R. China
| | - Jun Jiang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P. R. China
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Sun J, Li Y, Zhang B, Jiang A. High-Power LiNbO 3 Domain-Wall Nanodevices. ACS APPLIED MATERIALS & INTERFACES 2023; 15:8691-8698. [PMID: 36724474 DOI: 10.1021/acsami.2c20579] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Wide band gap semiconductors keep on pushing the limits of power electronic devices to higher switching speeds and higher operating temperatures, including diodes and transistors on low-cost Si substrates. Alternatively, erasable conducting walls created within ferroelectric single-crystal films integrated on the Si platform have emerged as a promising gateway to adaptive nanoelectronics in sufficient output power, where the repetitive creation of highly charged domain walls (DWs) is particularly important to increase the wall current density. Here, we observe large conduction of the head-to-head DW at an optimized inclination angle of 15° within a LiNbO3 single crystal that is 3-4 orders of magnitude higher than that of the tail-to-tail DW. The wall conduction is diode-like with a linear current density of higher than 1 mA/μm and an on/off ratio of larger than 106 under the application of a repetitive switching voltage pulse in time less than 10 ns and an endurance number of higher than 105. The high-power diodes can not only perform direct data processing in high-density nonvolatile DW memories in fast operation speeds and low-energy consumption but also function as sensors in compact electromechanical systems, selectors in phase-change memory and resistive random-access memory, and half-wave/full-wave rectifiers in modern nanocircuits in dimensions approaching the thickness of the depletion layer below which the tradition p-n junction malfunctions.
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Affiliation(s)
- Jie Sun
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai200433, China
| | - Yiming Li
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai200433, China
| | - Boyang Zhang
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai200433, China
| | - Anquan Jiang
- State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai200433, China
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15
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Giant switchable non thermally-activated conduction in 180° domain walls in tetragonal Pb(Zr,Ti)O 3. Nat Commun 2022; 13:7239. [PMID: 36433950 PMCID: PMC9700693 DOI: 10.1038/s41467-022-34777-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/08/2022] [Accepted: 11/04/2022] [Indexed: 11/27/2022] Open
Abstract
Conductive domain walls in ferroelectrics offer a promising concept of nanoelectronic circuits with 2D domain-wall channels playing roles of memristors or synoptic interconnections. However, domain wall conduction remains challenging to control and pA-range currents typically measured on individual walls are too low for single-channel devices. Charged domain walls show higher conductivity, but are generally unstable and difficult to create. Here, we show highly conductive and stable channels on ubiquitous 180° domain walls in the archetypical ferroelectric, tetragonal Pb(Zr,Ti)O3. These electrically erasable/rewritable channels show currents of tens of nanoamperes (200 to 400 nA/μm) at voltages ≤2 V and metallic-like non thermally-activated transport properties down to 4 K, as confirmed by nanoscopic mapping. The domain structure analysis and phase-field simulations reveal complex switching dynamics, in which the extraordinary conductivity in strained Pb(Zr,Ti)O3 films is explained by an interplay between ferroelastic a- and c-domains. This work demonstrates the potential of accessible and stable arrangements of nominally uncharged and electrically switchable domain walls for nanoelectronics.
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