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Guo L, Wu N, Zhang S, Zeng H, Yang J, Han X, Duan H, Liu Y, Wang L. Emerging Advances around Nanofluidic Transport and Mass Separation under Confinement in Atomically Thin Nanoporous Graphene. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2404087. [PMID: 39031097 DOI: 10.1002/smll.202404087] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/20/2024] [Revised: 07/07/2024] [Indexed: 07/22/2024]
Abstract
Membrane separation stands as an environmentally friendly, high permeance and selectivity, low energy demand process that deserves scientific investigation and industrialization. To address intensive demand, seeking appropriate membrane materials to surpass trade-off between permeability and selectivity and improve stability is on the schedule. 2D materials offer transformational opportunities and a revolutionary platform for researching membrane separation process. Especially, the atomically thin graphene with controllable porosity and structure, as well as unique properties, is widely considered as a candidate for membrane materials aiming to provide extreme stability, exponentially large selectivity combined with high permeability. Currently, it has shown promising opportunities to develop separation membranes to tackle bottlenecks of traditional membranes, and it has been of great interest for tremendously versatile applications such as separation, energy harvesting, and sensing. In this review, starting from transport mechanisms of separation, the material selection bank is narrowed down to nanoporous graphene. The study presents an enlightening overview of very recent developments in the preparation of atomically thin nanoporous graphene and correlates surface properties of such 2D nanoporous materials to their performance in critical separation applications. Finally, challenges related to modulation and manufacturing as well as potential avenues for performance improvements are also pointed out.
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Affiliation(s)
- Liping Guo
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China
| | - Ningran Wu
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies and Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Peking University, Beijing, 100871, China
- Beijing Graphene Institute, Beijing, 100095, China
| | - Shengping Zhang
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies and Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Peking University, Beijing, 100871, China
- Beijing Graphene Institute, Beijing, 100095, China
| | - Haiou Zeng
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China
| | - Jing Yang
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China
| | - Xiao Han
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies and Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Peking University, Beijing, 100871, China
- Beijing Graphene Institute, Beijing, 100095, China
| | - Hongwei Duan
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies and Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Peking University, Beijing, 100871, China
| | - Yuancheng Liu
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China
| | - Luda Wang
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies and Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Peking University, Beijing, 100871, China
- Beijing Graphene Institute, Beijing, 100095, China
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Shi Y, Li H, Tsunematsu H, Ozeki H, Kano K, Yamamoto E, Kobayashi M, Abe H, Chen CW, Osada M. Ultrafast 2D Nanosheet Assembly via Spontaneous Spreading Phenomenon. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2403915. [PMID: 38973115 DOI: 10.1002/smll.202403915] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/14/2024] [Revised: 06/25/2024] [Indexed: 07/09/2024]
Abstract
In 2D materials, a key engineering challenge is the mass production of large-area thin films without sacrificing their uniform 2D nature and unique properties. Here, it is demonstrated that a simple fluid phenomenon of water/alcohol solvents can become a sophisticated tool for self-assembly and designing organized structures of 2D nanosheets on a water surface. In situ, surface characterizations show that water/alcohol droplets of 2D nanosheets with cationic surfactants exhibit spontaneous spreading of large uniform monolayers within 10 s. Facile transfer of the monolayers onto solid or flexible substrates results in high-quality mono- and multilayer films with high coverages (>95%) and homogeneous electronic/optical properties. This spontaneous spreading is quite general and can be applied to various 2D nanosheets, including metal oxides, graphene oxide, h-BN, MoS2, and transition metal carbides, enabling on-demand smart manufacture of large-size (>4 inchϕ) 2D nanofilms and free-standing membranes.
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Affiliation(s)
- Yue Shi
- Institute of Materials and Systems for Sustainability (IMaSS) & Department of Materials Chemistry, Nagoya University, Nagoya, 464-8601, Japan
| | - Hong Li
- Institute of Materials and Systems for Sustainability (IMaSS) & Department of Materials Chemistry, Nagoya University, Nagoya, 464-8601, Japan
| | - Hirofumi Tsunematsu
- Institute of Materials and Systems for Sustainability (IMaSS) & Department of Materials Chemistry, Nagoya University, Nagoya, 464-8601, Japan
| | - Harumi Ozeki
- Institute of Materials and Systems for Sustainability (IMaSS) & Department of Materials Chemistry, Nagoya University, Nagoya, 464-8601, Japan
| | - Kimiko Kano
- Institute of Materials and Systems for Sustainability (IMaSS) & Department of Materials Chemistry, Nagoya University, Nagoya, 464-8601, Japan
| | - Eisuke Yamamoto
- Institute of Materials and Systems for Sustainability (IMaSS) & Department of Materials Chemistry, Nagoya University, Nagoya, 464-8601, Japan
| | - Makoto Kobayashi
- Institute of Materials and Systems for Sustainability (IMaSS) & Department of Materials Chemistry, Nagoya University, Nagoya, 464-8601, Japan
| | - Hiroya Abe
- Joining and Welding Research Institute, Osaka University, Osaka, 567-0047, Japan
| | - Chun-Wei Chen
- Department of Materials Science and Engineering, National Taiwan University, Taipei, 10617, Taiwan
- Center of Atomic Initiative for New Materials (AI-MAT), National Taiwan University, Taipei, 10617, Taiwan
| | - Minoru Osada
- Institute of Materials and Systems for Sustainability (IMaSS) & Department of Materials Chemistry, Nagoya University, Nagoya, 464-8601, Japan
- Quantum-Based Frontier Research Hub for Industry Development (Q-BReD), Nagoya University, Nagoya, 464-8601, Japan
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3
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Shang M, Bu S, Hu Z, Zhao Y, Liao J, Zheng C, Liu W, Lu Q, Li F, Wu H, Shi Z, Zhu Y, Xu Z, Guo B, Yu B, Li C, Zhang X, Xie Q, Yin J, Jia K, Peng H, Lin L, Liu Z. Polyacrylonitrile as an Efficient Transfer Medium for Wafer-Scale Transfer of Graphene. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402000. [PMID: 38738693 DOI: 10.1002/adma.202402000] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/06/2024] [Revised: 04/21/2024] [Indexed: 05/14/2024]
Abstract
The disparity between growth substrates and application-specific substrates can be mediated by reliable graphene transfer, the lack of which currently strongly hinders the graphene applications. Conventionally, the removal of soft polymers, that support the graphene during the transfer, would contaminate graphene surface, produce cracks, and leave unprotected graphene surface sensitive to airborne contaminations. In this work, it is found that polyacrylonitrile (PAN) can function as polymer medium for transferring wafer-size graphene, and encapsulating layer to deliver high-performance graphene devices. Therefore, PAN, that is compatible with device fabrication, does not need to be removed for subsequent applications. The crack-free transfer of 4 in. graphene onto SiO2/Si wafers, and the wafer-scale fabrication of graphene-based field-effect transistor arrays with no observed clear doping, uniformly high carrier mobility (≈11 000 cm2 V-1 s-1), and long-term stability at room temperature, are achieved. This work presents new concept for designing the transfer process of 2D materials, in which multifunctional polymer can be retained, and offers a reliable method for fabricating wafer-scale devices of 2D materials with outstanding performance.
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Affiliation(s)
- Mingpeng Shang
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Saiyu Bu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Zhaoning Hu
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Yixuan Zhao
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Junhao Liao
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Chunyang Zheng
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- School of Electronics, Peking University, Beijing, 100871, P. R. China
| | - Wenlin Liu
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Qi Lu
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- State Key Laboratory of Heavy Oil Processing, College of Science, China University of Petroleum, Beijing, 102249, P. R. China
| | - Fangfang Li
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Haotian Wu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Zhuofeng Shi
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- College of Chemistry and Chemical Engineering, Qingdao University, Qingdao, 266000, P. R. China
| | - Yaqi Zhu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- College of Chemistry and Chemical Engineering, Qingdao University, Qingdao, 266000, P. R. China
| | - Zhiying Xu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Laboratory of Marine Chemistry Theory and Technology, Ministry of Education, College of Chemistry and Chemical Engineering, Ocean University of China, Qingdao, 266100, P. R. China
| | - Bingbing Guo
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Beiming Yu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Chunhu Li
- Laboratory of Marine Chemistry Theory and Technology, Ministry of Education, College of Chemistry and Chemical Engineering, Ocean University of China, Qingdao, 266100, P. R. China
| | - Xiaodong Zhang
- College of Chemistry and Chemical Engineering, Qingdao University, Qingdao, 266000, P. R. China
| | - Qin Xie
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Jianbo Yin
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- School of Electronics, Peking University, Beijing, 100871, P. R. China
| | - Kaicheng Jia
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Hailin Peng
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Li Lin
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
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Yue Y, Zhang D, Wang P, Xia X, Wu X, Zhang Y, Mei J, Li S, Li M, Wang Y, Zhang X, Wei X, Liu H, Zhou W. Large-Area Flexible Carbon Nanofilms with Synergistically Enhanced Transmittance and Conductivity Prepared by Reorganizing Single-Walled Carbon Nanotube Networks. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2313971. [PMID: 38573651 DOI: 10.1002/adma.202313971] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/20/2023] [Revised: 03/23/2024] [Indexed: 04/05/2024]
Abstract
Large-area flexible transparent conductive films (TCFs) are highly desired for future electronic devices. Nanocarbon TCFs are one of the most promising candidates, but some of their properties are mutually restricted. Here, a novel carbon nanotube network reorganization (CNNR) strategy, that is, the facet-driven CNNR (FD-CNNR) technique, is presented to overcome this intractable contradiction. The FD-CNNR technique introduces an interaction between single-walled carbon nanotube (SWNT) and Cu─-O. Based on the unique FD-CNNR mechanism, large-area flexible reorganized carbon nanofilms (RNC-TCFs) are designed and fabricated with A3-size and even meter-length, including reorganized SWNT (RSWNT) films and graphene and RSWNT (G-RSWNT) hybrid films. Synergistic improvement in strength, transmittance, and conductivity of flexible RNC-TCFs is achieved. The G-RSWNT TCF shows sheet resistance as low as 69 Ω sq-1 at 86% transmittance, FOM value of 35, and Young's modulus of ≈45 MPa. The high strength enables RNC-TCFs to be freestanding on water and easily transferred to any target substrate without contamination. A4-size flexible smart window is fabricated, which manifests controllable dimming and fog removal. The FD-CNNR technique can be extended to large-area or even large-scale fabrication of TCFs and can provide new insights into the design of TCFs and other functional films.
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Affiliation(s)
- Ying Yue
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences and College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Di Zhang
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences and College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Pengyu Wang
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences and College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaogang Xia
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences and College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xin Wu
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences and College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yuejuan Zhang
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences and College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jie Mei
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences and College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shaoqing Li
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences and College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Mingming Li
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences and College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yanchun Wang
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
| | - Xiao Zhang
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences and College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
- Songshan Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Xiaojun Wei
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences and College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
- Songshan Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Huaping Liu
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences and College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
- Songshan Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Weiya Zhou
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences and College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
- Beijing Key Laboratory for Advanced Functional Materials and Structure Research, Beijing, 100190, China
- Songshan Materials Laboratory, Dongguan, Guangdong, 523808, China
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Liu H, Zhao J, Ly TH. Clean Transfer of Two-Dimensional Materials: A Comprehensive Review. ACS NANO 2024; 18:11573-11597. [PMID: 38655635 DOI: 10.1021/acsnano.4c01000] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/26/2024]
Abstract
The growth of two-dimensional (2D) materials through chemical vapor deposition (CVD) has sparked a growing interest among both the industrial and academic communities. The interest stems from several key advantages associated with CVD, including high yield, high quality, and high tunability. In order to harness the application potentials of 2D materials, it is often necessary to transfer them from their growth substrates to their desired target substrates. However, conventional transfer methods introduce contamination that can adversely affect the quality and properties of the transferred 2D materials, thus limiting their overall application performance. This review presents a comprehensive summary of the current clean transfer methods for 2D materials with a specific focus on the understanding of interaction between supporting layers and 2D materials. The review encompasses various aspects, including clean transfer methods, post-transfer cleaning techniques, and cleanliness assessment. Furthermore, it analyzes and compares the advances and limitations of these clean transfer techniques. Finally, the review highlights the primary challenges associated with current clean transfer methods and provides an outlook on future prospects.
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Affiliation(s)
- Haijun Liu
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, China
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong 999077, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, China
- State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong 999077, China
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Qing F, Guo X, Hou Y, Ning C, Wang Q, Li X. Toward the Production of Super Graphene. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2310678. [PMID: 38708801 DOI: 10.1002/smll.202310678] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2023] [Revised: 04/10/2024] [Indexed: 05/07/2024]
Abstract
The quality requirements of graphene depend on the applications. Some have a high tolerance for graphene quality and even require some defects, while others require graphene as perfect as possible to achieve good performance. So far, synthesis of large-area graphene films by chemical vapor deposition of carbon precursors on metal substrates, especially on Cu, remains the main way to produce high-quality graphene, which has been significantly developed in the past 15 years. However, although many prototypes are demonstrated, their performance is still more or less far from the theoretical property limit of graphene. This review focuses on how to make super graphene, namely graphene with a perfect structure and free of contaminations. More specially, this study focuses on graphene synthesis on Cu substrates. Typical defects in graphene are first discussed together with the formation mechanisms and how they are characterized normally, followed with a brief review of graphene properties and the effects of defects. Then, the synthesis progress of super graphene from the aspects of substrate, grain size, wrinkles, contamination, adlayers, and point defects are reviewed. Graphene transfer is briefly discussed as well. Finally, the challenges to make super graphene are discussed and a strategy is proposed.
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Affiliation(s)
- Fangzhu Qing
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
- Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen, 518110, China
| | - Xiaomeng Guo
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Yuting Hou
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Congcong Ning
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Qisong Wang
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Xuesong Li
- School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu, 611731, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China
- Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen, 518110, China
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7
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Dong W, Dai Z, Liu L, Zhang Z. Toward Clean 2D Materials and Devices: Recent Progress in Transfer and Cleaning Methods. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2303014. [PMID: 38049925 DOI: 10.1002/adma.202303014] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/01/2023] [Revised: 08/30/2023] [Indexed: 12/06/2023]
Abstract
Two-dimensional (2D) materials have tremendous potential to revolutionize the field of electronics and photonics. Unlocking such potential, however, is hampered by the presence of contaminants that usually impede the performance of 2D materials in devices. This perspective provides an overview of recent efforts to develop clean 2D materials and devices. It begins by discussing conventional and recently developed wet and dry transfer techniques and their effectiveness in maintaining material "cleanliness". Multi-scale methodologies for assessing the cleanliness of 2D material surfaces and interfaces are then reviewed. Finally, recent advances in passive and active cleaning strategies are presented, including the unique self-cleaning mechanism, thermal annealing, and mechanical treatment that rely on self-cleaning in essence. The crucial role of interface wetting in these methods is emphasized, and it is hoped that this understanding can inspire further extension and innovation of efficient transfer and cleaning of 2D materials for practical applications.
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Affiliation(s)
- Wenlong Dong
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication and CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhaohe Dai
- Department of Mechanics and Engineering Science, State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing, 100871, China
| | - Luqi Liu
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication and CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Zhong Zhang
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei, 230027, China
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Zhu Y, Shi Z, Zhao Y, Bu S, Hu Z, Liao J, Lu Q, Zhou C, Guo B, Shang M, Li F, Xu Z, Zhang J, Xie Q, Li C, Sun P, Mao B, Zhang X, Liu Z, Lin L. Recent trends in the transfer of graphene films. NANOSCALE 2024; 16:7862-7873. [PMID: 38568087 DOI: 10.1039/d3nr05626k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/26/2024]
Abstract
Recent years have witnessed advances in chemical vapor deposition growth of graphene films on metal foils with fine scalability and thickness controllability. However, challenges for obtaining wrinkle-free, defect-free and large-area uniformity remain to be tackled. In addition, the real commercial applications of graphene films still require industrially compatible transfer techniques with reliable performance of transferred graphene, excellent production capacity, and suitable cost. Transferred graphene films, particularly with a large area, still suffer from the presence of transfer-related cracks, wrinkles and contaminants, which would strongly deteriorate the quality and uniformity of transferred graphene films. Potential applications of graphene films include moisture barrier films, transparent conductive films, electromagnetic shielding films, and optical communications; such applications call different requirements for the performance of transferred graphene, which, in turn, determine the suitable transfer techniques. Besides the reliable transfer process, automatic machines should be well developed for the future batch transfer of graphene films, ensuring the repeatability and scalability. This mini-review provides a summary of recent advances in the transfer of graphene films and offers a perspective for future directions of transfer techniques that are compatible for industrial batch transfer.
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Affiliation(s)
- Yaqi Zhu
- College of Chemistry and Chemical Engineering, Qingdao University, Qingdao, 266000, China.
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Beijing Graphene Institute, Beijing 100095, P. R. China.
| | - Zhuofeng Shi
- College of Chemistry and Chemical Engineering, Qingdao University, Qingdao, 266000, China.
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Beijing Graphene Institute, Beijing 100095, P. R. China.
| | - Yixuan Zhao
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Saiyu Bu
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
| | - Zhaoning Hu
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Beijing Graphene Institute, Beijing 100095, P. R. China.
| | - Junhao Liao
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
- National Center for Nanoscience and Technology, Beijing 100190, China
| | - Qi Lu
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- State Key Laboratory of Heavy Oil Processing, College of Science, China University of Petroleum, Beijing 102249, P. R. China
| | - Chaofan Zhou
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Beijing Graphene Institute, Beijing 100095, P. R. China.
| | - Bingbing Guo
- Beijing Graphene Institute, Beijing 100095, P. R. China.
| | - Mingpeng Shang
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
| | - Fangfang Li
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
| | - Zhiying Xu
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Laboratory of Marine Chemistry Theory and Technology, Ministry of Education, College of Chemistry and Chemical Engineering, Ocean University of China, Qingdao 266100, P. R. China
| | - Jialin Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Laboratory of Marine Chemistry Theory and Technology, Ministry of Education, College of Chemistry and Chemical Engineering, Ocean University of China, Qingdao 266100, P. R. China
| | - Qin Xie
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
| | - Chunhu Li
- Laboratory of Marine Chemistry Theory and Technology, Ministry of Education, College of Chemistry and Chemical Engineering, Ocean University of China, Qingdao 266100, P. R. China
| | - Pengzhan Sun
- Institute of Applied Physics and Materials, Engineering, University of Macau, Avenida da Universidade, Taipa, Macau SAR 999078, P.R. China
| | - Boyang Mao
- Department of Engineering, University of Cambridge, Cambridge, CB3 0FA, U.K
| | - Xiaodong Zhang
- College of Chemistry and Chemical Engineering, Qingdao University, Qingdao, 266000, China.
| | - Zhongfan Liu
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Center for Nanochemistry, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
| | - Li Lin
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China.
- Beijing Graphene Institute, Beijing 100095, P. R. China.
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
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9
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Zhu Y, Zhang J, Cheng T, Tang J, Duan H, Hu Z, Shao J, Wang S, Wei M, Wu H, Li A, Li S, Balci O, Shinde SM, Ramezani H, Wang L, Lin L, Ferrari AC, Yakobson BI, Peng H, Jia K, Liu Z. Controlled Growth of Single-Crystal Graphene Wafers on Twin-Boundary-Free Cu(111) Substrates. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308802. [PMID: 37878366 DOI: 10.1002/adma.202308802] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2023] [Revised: 10/05/2023] [Indexed: 10/26/2023]
Abstract
Single-crystal graphene (SCG) wafers are needed to enable mass-electronics and optoelectronics owing to their excellent properties and compatibility with silicon-based technology. Controlled synthesis of high-quality SCG wafers can be done exploiting single-crystal Cu(111) substrates as epitaxial growth substrates recently. However, current Cu(111) films prepared by magnetron sputtering on single-crystal sapphire wafers still suffer from in-plane twin boundaries, which degrade the SCG chemical vapor deposition. Here, it is shown how to eliminate twin boundaries on Cu and achieve 4 in. Cu(111) wafers with ≈95% crystallinity. The introduction of a temperature gradient on Cu films with designed texture during annealing drives abnormal grain growth across the whole Cu wafer. In-plane twin boundaries are eliminated via migration of out-of-plane grain boundaries. SCG wafers grown on the resulting single-crystal Cu(111) substrates exhibit improved crystallinity with >97% aligned graphene domains. As-synthesized SCG wafers exhibit an average carrier mobility up to 7284 cm2 V-1 s-1 at room temperature from 103 devices and a uniform sheet resistance with only 5% deviation in 4 in. region.
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Affiliation(s)
- Yeshu Zhu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Jincan Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Ting Cheng
- Department of Materials Science & NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Jilin Tang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Hongwei Duan
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, P. R. China
| | - Zhaoning Hu
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jiaxin Shao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Shiwei Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Mingyue Wei
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Haotian Wu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Ang Li
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- College of Science, China University of Petroleum, Beijing, 102249, P. R. China
| | - Sheng Li
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Osman Balci
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Sachin M Shinde
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Hamideh Ramezani
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Luda Wang
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, P. R. China
| | - Li Lin
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Boris I Yakobson
- Department of Materials Science & NanoEngineering, Rice University, Houston, TX, 77005, USA
- Department of Chemistry, Rice University, Houston, TX, 77005, USA
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Kaicheng Jia
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
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10
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Chen S, Chen G, Zhao Y, Bu S, Hu Z, Mao B, Wu H, Liao J, Li F, Zhou C, Guo B, Liu W, Zhu Y, Lu Q, Hu J, Shang M, Shi Z, Yu B, Zhang X, Zhao Z, Jia K, Zhang Y, Sun P, Liu Z, Lin L, Wang X. Tunable Adhesion for All-Dry Transfer of 2D Materials Enabled by the Freezing of Transfer Medium. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308950. [PMID: 38288661 DOI: 10.1002/adma.202308950] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2023] [Revised: 12/30/2023] [Indexed: 02/09/2024]
Abstract
The real applications of chemical vapor deposition (CVD)-grown graphene films require the reliable techniques for transferring graphene from growth substrates onto application-specific substrates. The transfer approaches that avoid the use of organic solvents, etchants, and strong bases are compatible with industrial batch processing, in which graphene transfer should be conducted by dry exfoliation and lamination. However, all-dry transfer of graphene remains unachievable owing to the difficulty in precisely controlling interfacial adhesion to enable the crack- and contamination-free transfer. Herein, through controllable crosslinking of transfer medium polymer, the adhesion is successfully tuned between the polymer and graphene for all-dry transfer of graphene wafers. Stronger adhesion enables crack-free peeling of the graphene from growth substrates, while reduced adhesion facilitates the exfoliation of polymer from graphene surface leaving an ultraclean surface. This work provides an industrially compatible approach for transferring 2D materials, key for their future applications, and offers a route for tuning the interfacial adhesion that would allow for the transfer-enabled fabrication of van der Waals heterostructures.
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Affiliation(s)
- Sensheng Chen
- School of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan, 030002, P. R. China
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Ge Chen
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Yixuan Zhao
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Saiyu Bu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Zhaoning Hu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Boyang Mao
- Department of Engineering, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Haotian Wu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Junhao Liao
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Fangfang Li
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Chaofan Zhou
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Bingbing Guo
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Wenlin Liu
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Yaqi Zhu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- College of Chemical Science and Engineering, Qingdao University, Qingdao, 266071, P. R. China
| | - Qi Lu
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- College of Science, China University of Petroleum, Beijing, 102249, P. R. China
| | - Jingyi Hu
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Mingpeng Shang
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Zhuofeng Shi
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- College of Chemical Science and Engineering, Qingdao University, Qingdao, 266071, P. R. China
| | - Beiming Yu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Xiaodong Zhang
- College of Chemical Science and Engineering, Qingdao University, Qingdao, 266071, P. R. China
| | - Zhenxin Zhao
- School of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan, 030002, P. R. China
| | - Kaicheng Jia
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Pengzhan Sun
- Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau SAR, 999078, P. R. China
| | - Zhongfan Liu
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Li Lin
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Xiaomin Wang
- School of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan, 030002, P. R. China
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11
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Che L, Hu X, Xu H, Liu Y, Lv C, Kang Z, Wu M, Wen R, Wu H, Cui J, Li K, Qi G, Luo Y, Ma X, Sun F, Li M, Liu J. Soap Film Transfer Printing for Ultrathin Electronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2308312. [PMID: 37992249 DOI: 10.1002/smll.202308312] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2023] [Revised: 10/31/2023] [Indexed: 11/24/2023]
Abstract
Flexible and stretchable electronics have attractive applications inaccessible to conventional rigid electronics. However, the mainstream transfer printing techniques have challenges for electronic films in terms of thickness and size and limitations for target substrates in terms of curvature, depth, and interfacial adhesion. Here a facile, damage-free, and contamination-free soap film transfer printing technique is reported that enables the wrinkle-free transfer of ultrathin electronic films, precise alignment in a transparent manner, and conformal and adhesion-independent printing onto various substrates, including those too topographically and adhesively challenging by existing methods. In principle, not only the pattern, resolution, and thickness of transferred films, but also the curvature, depth, and adhesion of target substrates are unlimited, while the size of transferred films can be as high as meter-scale. To demonstrate the capabilities of soap film transfer printing, pre-fabricated ultrathin electronics with multiple patterns, single micron resolution, sub-micron thickness, and centimeter size are conformably integrated onto the ultrathin web, ultra-soft cotton, DVD-R disk with the minimum radius of curvature of 131 nm, interior cavity of Klein bottle and dandelion with ultralow adhesion. The printed ultrathin sensors show superior conformabilities and robust adhesion, leading to engineering opportunities including electrocardiogram (ECG) signal acquisition and temperature measurement in aqueous environments.
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Affiliation(s)
- Lixuan Che
- State Key Laboratory of Structural Analysis Optimization and CAE Software for Industrial Equipment, Department of Engineering Mechanics, School of Mechanics and Aerospace Engineering, Dalian University of Technology, Dalian, 116024, China
| | - Xiaoguang Hu
- State Key Laboratory of High-performance Precision Manufacturing, Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian, 116024, China
| | - Hechen Xu
- Department of Engineering Mechanics and Center for Nano and Micro Mechanics, AML, Tsinghua University, Beijing, 100084, China
| | - Yuanbo Liu
- State Key Laboratory of Fine Chemicals, Frontier Science Center for Smart Materials, Liaoning Key Laboratory of Clean Utilization of Chemical Resources, Dalian University of Technology, Dalian, 116024, China
| | - Cunjing Lv
- Department of Engineering Mechanics and Center for Nano and Micro Mechanics, AML, Tsinghua University, Beijing, 100084, China
| | - Zhan Kang
- State Key Laboratory of Structural Analysis Optimization and CAE Software for Industrial Equipment, Department of Engineering Mechanics, School of Mechanics and Aerospace Engineering, Dalian University of Technology, Dalian, 116024, China
| | - Mengxi Wu
- State Key Laboratory of High-performance Precision Manufacturing, Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian, 116024, China
| | - Rongfu Wen
- State Key Laboratory of Fine Chemicals, Frontier Science Center for Smart Materials, Liaoning Key Laboratory of Clean Utilization of Chemical Resources, Dalian University of Technology, Dalian, 116024, China
| | - Huaping Wu
- College of Mechanical Engineering, Zhejiang University of Technology, Key Laboratory of Special Purpose Equipment and Advanced Processing Technology, Ministry of Education and Zhejiang Province, Hangzhou, 310032, China
| | - Jiayi Cui
- State Key Laboratory of Structural Analysis Optimization and CAE Software for Industrial Equipment, Department of Engineering Mechanics, School of Mechanics and Aerospace Engineering, Dalian University of Technology, Dalian, 116024, China
| | - Kun Li
- Department of Engineering Mechanics and Center for Nano and Micro Mechanics, AML, Tsinghua University, Beijing, 100084, China
| | - Guangliang Qi
- State Key Laboratory of Structural Analysis Optimization and CAE Software for Industrial Equipment, Department of Engineering Mechanics, School of Mechanics and Aerospace Engineering, Dalian University of Technology, Dalian, 116024, China
| | - Yangjun Luo
- School of Science, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Xuehu Ma
- State Key Laboratory of Fine Chemicals, Frontier Science Center for Smart Materials, Liaoning Key Laboratory of Clean Utilization of Chemical Resources, Dalian University of Technology, Dalian, 116024, China
| | - Feiyi Sun
- Department of Medical Ultrasound, Health Medical Department, Central Hospital of Dalian University of Technology, Dalian, 116024, China
| | - Ming Li
- State Key Laboratory of Structural Analysis Optimization and CAE Software for Industrial Equipment, Department of Engineering Mechanics, School of Mechanics and Aerospace Engineering, Dalian University of Technology, Dalian, 116024, China
| | - Junshan Liu
- State Key Laboratory of High-performance Precision Manufacturing, Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian, 116024, China
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12
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Kim SI, Moon JY, Hyeong SK, Ghods S, Kim JS, Choi JH, Park DS, Bae S, Cho SH, Lee SK, Lee JH. Float-stacked graphene-PMMA laminate. Nat Commun 2024; 15:2172. [PMID: 38467601 PMCID: PMC10928174 DOI: 10.1038/s41467-024-46502-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/08/2023] [Accepted: 02/22/2024] [Indexed: 03/13/2024] Open
Abstract
Semi-infinite single-atom-thick graphene is an ideal reinforcing material that can simultaneously improve the mechanical, electrical, and thermal properties of matrix. Here, we present a float-stacking strategy to accurately align the monolayer graphene reinforcement in polymer matrix. We float graphene-poly(methylmethacrylate) (PMMA) membrane (GPM) at the water-air interface, and wind-up layer-by-layer by roller. During the stacking process, the inherent water meniscus continuously induces web tension of the GPM, suppressing wrinkle and folding generation. Moreover, rolling-up and hot-rolling mill process above the glass transition temperature of PMMA induces conformal contact between each layer. This allows for pre-tension of the composite, maximizing its reinforcing efficiency. The number and spacing of the embedded graphene fillers are precisely controlled. Notably, we accurately align 100 layers of monolayer graphene in a PMMA matrix with the same intervals to achieve a specific strength of about 118.5 MPa g-1 cm3, which is higher than that of lightweight Al alloy, and a thermal conductivity of about 4.00 W m-1 K-1, which is increased by about 2,000 %, compared to the PMMA film.
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Affiliation(s)
- Seung-Il Kim
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Korea
- Department of Materials Science and Engineering, Ajou University, Suwon, 16499, Korea
- Mechanical Engineering & Materials Science, Washington University in St. Louis, Saint Louis, MO, 63105, USA
| | - Ji-Yun Moon
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Korea
- Department of Materials Science and Engineering, Ajou University, Suwon, 16499, Korea
- Mechanical Engineering & Materials Science, Washington University in St. Louis, Saint Louis, MO, 63105, USA
| | - Seok-Ki Hyeong
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Korea
- Department of Materials Science and Engineering, Ajou University, Suwon, 16499, Korea
- Functional Composite Materials Research Centre, Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Wanju, 55324, Korea
| | - Soheil Ghods
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Korea
- Department of Materials Science and Engineering, Ajou University, Suwon, 16499, Korea
| | - Jin-Su Kim
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Korea
- Department of Materials Science and Engineering, Ajou University, Suwon, 16499, Korea
| | - Jun-Hui Choi
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Korea
- Department of Materials Science and Engineering, Ajou University, Suwon, 16499, Korea
| | - Dong Seop Park
- Department of Materials Science and Engineering, Ajou University, Suwon, 16499, Korea
| | - Sukang Bae
- Functional Composite Materials Research Centre, Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Wanju, 55324, Korea
| | - Sung Ho Cho
- A Development Team, Samsung Display, Asan, 31454, Korea.
| | - Seoung-Ki Lee
- Department of Materials Science and Engineering, Pusan National University, Busan, 46241, Korea.
| | - Jae-Hyun Lee
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Korea.
- Department of Materials Science and Engineering, Ajou University, Suwon, 16499, Korea.
- Functional Composite Materials Research Centre, Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Wanju, 55324, Korea.
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13
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Liu B, Ma S. Precise synthesis of graphene by chemical vapor deposition. NANOSCALE 2024; 16:4407-4433. [PMID: 38291992 DOI: 10.1039/d3nr06041a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/01/2024]
Abstract
Graphene, a typical representative of the family of two-dimensional (2D) materials, possesses a series of phenomenal physical properties. To date, numerous inspiring discoveries have been made on its structures, properties, characterization, synthesis, transfer and applications. The real practical applications of this magic material indeed require large-scale synthesis and precise control over its structures, such as size, crystallinity, layer number, stacking order, edge type and contamination levels. Nonetheless, studies on the precise synthesis of graphene are far from satisfactory currently. Our review aims to deal with the precise synthesis of four critical graphene structures, including single-crystal graphene (SCG), AB-stacked bilayer graphene (AB-BLG), etched graphene and clean graphene. Meanwhile, existing problems and future directions in the precise synthesis of graphene are also briefly discussed.
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Affiliation(s)
- Bing Liu
- Ji Hua Laboratory, Foshan, 528200, P. R. China.
| | - Siguang Ma
- Ji Hua Laboratory, Foshan, 528200, P. R. China.
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14
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Liu A, Zhang X, Liu Z, Li Y, Peng X, Li X, Qin Y, Hu C, Qiu Y, Jiang H, Wang Y, Li Y, Tang J, Liu J, Guo H, Deng T, Peng S, Tian H, Ren TL. The Roadmap of 2D Materials and Devices Toward Chips. NANO-MICRO LETTERS 2024; 16:119. [PMID: 38363512 PMCID: PMC10873265 DOI: 10.1007/s40820-023-01273-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 10/30/2023] [Indexed: 02/17/2024]
Abstract
Due to the constraints imposed by physical effects and performance degradation, silicon-based chip technology is facing certain limitations in sustaining the advancement of Moore's law. Two-dimensional (2D) materials have emerged as highly promising candidates for the post-Moore era, offering significant potential in domains such as integrated circuits and next-generation computing. Here, in this review, the progress of 2D semiconductors in process engineering and various electronic applications are summarized. A careful introduction of material synthesis, transistor engineering focused on device configuration, dielectric engineering, contact engineering, and material integration are given first. Then 2D transistors for certain electronic applications including digital and analog circuits, heterogeneous integration chips, and sensing circuits are discussed. Moreover, several promising applications (artificial intelligence chips and quantum chips) based on specific mechanism devices are introduced. Finally, the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed, and potential development pathways or roadmaps are further speculated and outlooked.
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Affiliation(s)
- Anhan Liu
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Xiaowei Zhang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Ziyu Liu
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yuning Li
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, 100044, People's Republic of China
| | - Xueyang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Xin Li
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Yue Qin
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Chen Hu
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Yanqing Qiu
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Han Jiang
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yang Wang
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yifan Li
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Jun Tang
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Jun Liu
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Hao Guo
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China.
| | - Tao Deng
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, 100044, People's Republic of China.
| | - Songang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.
- IMECAS-HKUST-Joint Laboratory of Microelectronics, Beijing, 100029, People's Republic of China.
| | - He Tian
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China.
| | - Tian-Ling Ren
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China.
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15
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Katiyar AK, Hoang AT, Xu D, Hong J, Kim BJ, Ji S, Ahn JH. 2D Materials in Flexible Electronics: Recent Advances and Future Prospectives. Chem Rev 2024; 124:318-419. [PMID: 38055207 DOI: 10.1021/acs.chemrev.3c00302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
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Affiliation(s)
- Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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16
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Qu ZX, Jiang JW. Nanobubble-induced significant reduction of the interfacial thermal conductance for few-layer graphene. Phys Chem Chem Phys 2023; 25:28651-28656. [PMID: 37876242 DOI: 10.1039/d3cp04085b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2023]
Abstract
The heat transport properties of van der Waals layered structures are crucial for ensuring the reliability and longevity of high-performance optoelectronic equipment. Owing to the two-dimensional nature of atomic layers, the presence of bubbles is commonly observed within these structures. Nevertheless, the effect of bubbles on the interfacial thermal conductance remains unclear. Based on the elastic membrane theory and the improved van der Waals gas state equation, we develop an analytical formula to describe the influence of bubble shape on the interfacial thermal conductance. It shows that the presence of bubbles has a considerable impact on reducing the interfacial thermal conductance across graphene/graphene interfaces. More specifically, the presence of nanobubbles can result in a reduction of up to 53% in the interfacial thermal conductance. The validity of the analytical predictions is confirmed through molecular dynamic simulations. These results offer valuable insights into the thermal management of van der Waals layered structures in the application of next-generation electronic nanodevices.
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Affiliation(s)
- Zhao-Xia Qu
- Shanghai Key Laboratory of Mechanics in Energy Engineering, Shanghai Institute of Applied Mathematics and Mechanics, Shanghai Frontier Science Center of Mechanoinformatics, School of Mechanics and Engineering Science, Shanghai University, Shanghai 200072, People's Republic of China.
| | - Jin-Wu Jiang
- Shanghai Key Laboratory of Mechanics in Energy Engineering, Shanghai Institute of Applied Mathematics and Mechanics, Shanghai Frontier Science Center of Mechanoinformatics, School of Mechanics and Engineering Science, Shanghai University, Shanghai 200072, People's Republic of China.
- Zhejiang Laboratory, Hangzhou 311100, China
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17
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Xie M, Jia Y, Nie C, Liu Z, Tang A, Fan S, Liang X, Jiang L, He Z, Yang R. Monolithic 3D integration of 2D transistors and vertical RRAMs in 1T-4R structure for high-density memory. Nat Commun 2023; 14:5952. [PMID: 37741834 PMCID: PMC10517937 DOI: 10.1038/s41467-023-41736-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/19/2022] [Accepted: 09/12/2023] [Indexed: 09/25/2023] Open
Abstract
Emerging data-intensive computation has driven the advanced packaging and vertical stacking of integrated circuits, for minimized latency and energy consumption. Yet a monolithic three-dimensional (3D) integrated structure with interleaved logic and high-density memory layers has been difficult to achieve due to challenges in managing the thermal budget. Here we experimentally demonstrate a monolithic 3D integration of atomically-thin molybdenum disulfide (MoS2) transistors and 3D vertical resistive random-access memories (VRRAMs), with the MoS2 transistors stacked between the bottom-plane and top-plane VRRAMs. The whole fabrication process is integration-friendly (below 300 °C), and the measurement results confirm that the top-plane fabrication does not affect the bottom-plane devices. The MoS2 transistor can drive each layer of VRRAM into four resistance states. Circuit-level modeling of the monolithic 3D structure demonstrates smaller area, faster data transfer, and lower energy consumption than a planar memory. Such platform holds a high potential for energy-efficient 3D on-chip memory systems.
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Affiliation(s)
- Maosong Xie
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai, China
| | - Yueyang Jia
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai, China
| | - Chen Nie
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China
| | - Zuheng Liu
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai, China
| | - Alvin Tang
- Department of Electrical Engineering, Stanford University, Stanford, California, USA
| | - Shiquan Fan
- School of Microelectronics, Xi'an Jiaotong University, Xi'an, Shaanxi, China
| | - Xiaoyao Liang
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China
| | - Li Jiang
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China
- MoE Key Lab of Artificial Intelligence, Shanghai Jiao Tong University, Shanghai, China
- Shanghai Qi Zhi Institute, Shanghai, China
| | - Zhezhi He
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China.
| | - Rui Yang
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai, China.
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, China.
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shanghai Jiao Tong University, Shanghai, China.
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18
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Yuan G, Liu W, Huang X, Wan Z, Wang C, Yao B, Sun W, Zheng H, Yang K, Zhou Z, Nie Y, Xu J, Gao L. Stacking transfer of wafer-scale graphene-based van der Waals superlattices. Nat Commun 2023; 14:5457. [PMID: 37674029 PMCID: PMC10482836 DOI: 10.1038/s41467-023-41296-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/31/2023] [Accepted: 08/29/2023] [Indexed: 09/08/2023] Open
Abstract
High-quality graphene-based van der Waals superlattices are crucial for investigating physical properties and developing functional devices. However, achieving homogeneous wafer-scale graphene-based superlattices with controlled twist angles is challenging. Here, we present a flat-to-flat transfer method for fabricating wafer-scale graphene and graphene-based superlattices. The aqueous solution between graphene and substrate is removed by a two-step spinning-assisted dehydration procedure with the optimal wetting angle. Proton-assisted treatment is further used to clean graphene surfaces and interfaces, which also decouples graphene and neutralizes the doping levels. Twist angles between different layers are accurately controlled by adjusting the macroscopic stacking angle through their wafer flats. Transferred films exhibit minimal defects, homogeneous morphology, and uniform electrical properties over wafer scale. Even at room temperature, robust quantum Hall effects are observed in graphene films with centimetre-scale linewidth. Our stacking transfer method can facilitate the fabrication of graphene-based van der Waals superlattices and accelerate functional device applications.
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Affiliation(s)
- Guowen Yuan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Weilin Liu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Xianlei Huang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Zihao Wan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Chao Wang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Bing Yao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Wenjie Sun
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Hang Zheng
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Kehan Yang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Zhenjia Zhou
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Jie Xu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Libo Gao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
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19
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Lu Q, Zhong H, Sun X, Shang M, Liu W, Zhou C, Hu Z, Shi Z, Zhu Y, Liu X, Zhao Y, Liao J, Zhang X, Lian Z, Song Y, Sun L, Jia K, Yin J, Zhang X, Xie Q, Yin WJ, Lin L, Liu Z. High Moisture-Barrier Performance of Double-Layer Graphene Enabled by Conformal and Clean Transfer. NANO LETTERS 2023; 23:7716-7724. [PMID: 37539976 DOI: 10.1021/acs.nanolett.3c02453] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/05/2023]
Abstract
Graphene films that can theoretically block almost all molecules have emerged as promising candidate materials for moisture barrier films in the applications of organic photonic devices and gas storage. However, the current barrier performance of graphene films does not reach the ideal value. Here, we reveal that the interlayer distance of the large-area stacked multilayer graphene is the key factor that suppresses water permeation. We show that by minimizing the gap between the two monolayers, the water vapor transmission rate of double-layer graphene can be as low as 5 × 10-3 g/(m2 d) over an A4-sized region. The high barrier performance was achieved by the absence of interfacial contamination and conformal contact between graphene layers during layer-by-layer transfer. Our work reveals the moisture permeation mechanism through graphene layers, and with this approach, we can tailor the interlayer coupling of manually stacked two-dimensional materials for new physics and applications.
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Affiliation(s)
- Qi Lu
- College of Science, China University of Petroleum, Beijing, Beijing 102249, People's Republic of China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China
- Beijing Graphene Institute, Beijing 100095, People's Republic of China
| | - Haotian Zhong
- Beijing Graphene Institute, Beijing 100095, People's Republic of China
| | - Xiucai Sun
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China
- Beijing Graphene Institute, Beijing 100095, People's Republic of China
| | - Mingpeng Shang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Wenlin Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China
- Beijing Graphene Institute, Beijing 100095, People's Republic of China
| | - Chaofan Zhou
- Beijing Graphene Institute, Beijing 100095, People's Republic of China
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Zhaoning Hu
- Beijing Graphene Institute, Beijing 100095, People's Republic of China
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Zhuofeng Shi
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
- College of Chemistry and Chemical Engineering, Qingdao University, Qingdao, 266000, People's Republic of China
| | - Yaqi Zhu
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
- College of Chemistry and Chemical Engineering, Qingdao University, Qingdao, 266000, People's Republic of China
| | - Xiaoting Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Yixuan Zhao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Junhao Liao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Xintong Zhang
- Beijing Graphene Institute, Beijing 100095, People's Republic of China
| | - Zeyu Lian
- Beijing Graphene Institute, Beijing 100095, People's Republic of China
| | - Yuqing Song
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China
- Beijing Graphene Institute, Beijing 100095, People's Republic of China
| | - Luzhao Sun
- Beijing Graphene Institute, Beijing 100095, People's Republic of China
| | - Kaicheng Jia
- Beijing Graphene Institute, Beijing 100095, People's Republic of China
| | - Jianbo Yin
- Beijing Graphene Institute, Beijing 100095, People's Republic of China
| | - Xiaodong Zhang
- College of Chemistry and Chemical Engineering, Qingdao University, Qingdao, 266000, People's Republic of China
| | - Qin Xie
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Wan-Jian Yin
- Beijing Graphene Institute, Beijing 100095, People's Republic of China
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Soochow University, Suzhou 215006, People's Republic of China
| | - Li Lin
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Zhongfan Liu
- College of Science, China University of Petroleum, Beijing, Beijing 102249, People's Republic of China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China
- Beijing Graphene Institute, Beijing 100095, People's Republic of China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing 100095, People's Republic of China
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20
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Liu F, Wang T, Gao X, Yang H, Zhang Z, Guo Y, Yuan Y, Huang Z, Tang J, Sheng B, Chen Z, Liu K, Shen B, Li XZ, Peng H, Wang X. Determination of the preferred epitaxy for III-nitride semiconductors on wet-transferred graphene. SCIENCE ADVANCES 2023; 9:eadf8484. [PMID: 37531436 PMCID: PMC10396303 DOI: 10.1126/sciadv.adf8484] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2022] [Accepted: 07/05/2023] [Indexed: 08/04/2023]
Abstract
Transferred graphene provides a promising III-nitride semiconductor epitaxial platform for fabricating multifunctional devices beyond the limitation of conventional substrates. Despite its tremendous fundamental and technological importance, it remains an open question on which kind of epitaxy is preferred for single-crystal III-nitrides. Popular answers to this include the remote epitaxy where the III-nitride/graphene interface is coupled by nonchemical bonds, and the quasi-van der Waals epitaxy (quasi-vdWe) where the interface is mainly coupled by covalent bonds. Here, we show the preferred one on wet-transferred graphene is quasi-vdWe. Using aluminum nitride (AlN), a strong polar III-nitride, as an example, we demonstrate that the remote interaction from the graphene/AlN template can inhibit out-of-plane lattice inversion other than in-plane lattice twist of the nuclei, resulting in a polycrystalline AlN film. In contrast, quasi-vdWe always leads to single-crystal film. By answering this long-standing controversy, this work could facilitate the development of III-nitride semiconductor devices on two-dimensional materials such as graphene.
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Affiliation(s)
- Fang Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Tao Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
| | - Xin Gao
- Center for Nano-chemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Huaiyuan Yang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Zhihong Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, Institute for Multidisciplinary Innovation, University of Science and Technology Beijing, Beijing 100083, China
- Interdisciplinary Institute of Light-Element Quantum Materials, Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China
| | - Yucheng Guo
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Ye Yuan
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Zhen Huang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Jilin Tang
- Center for Nano-chemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Bowen Sheng
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Zhaoying Chen
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Interdisciplinary Institute of Light-Element Quantum Materials, Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China
| | - Bo Shen
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
| | - Xin-Zheng Li
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Interdisciplinary Institute of Light-Element Quantum Materials, Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
| | - Hailin Peng
- Center for Nano-chemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Beijing Graphene Institute, Beijing 100095, China
| | - Xinqiang Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
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Baek GW, Kim YJ, Lee M, Kwon Y, Chun B, Park G, Seo H, Yang H, Kwak J. Progress in the Development of Active-Matrix Quantum-Dot Light-Emitting Diodes Driven by Non-Si Thin-Film Transistors. MATERIALS (BASEL, SWITZERLAND) 2022; 15:ma15238511. [PMID: 36500003 PMCID: PMC9736594 DOI: 10.3390/ma15238511] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2022] [Revised: 11/18/2022] [Accepted: 11/27/2022] [Indexed: 05/28/2023]
Abstract
This paper aims to discuss the key accomplishments and further prospects of active-matrix (AM) quantum-dot (QD) light-emitting diodes (QLEDs) display. We present an overview and state-of-the-art of QLEDs as a frontplane and non-Si-based thin-film transistors (TFTs) as a backplane to meet the requirements for the next-generation displays, such as flexibility, transparency, low power consumption, fast response, high efficiency, and operational reliability. After a brief introduction, we first review the research on non-Si-based TFTs using metal oxides, transition metal dichalcogenides, and semiconducting carbon nanotubes as the driving unit of display devices. Next, QLED technologies are analyzed in terms of the device structure, device engineering, and QD patterning technique to realize high-performance, full-color AM-QLEDs. Lastly, recent research on the monolithic integration of TFT-QLED is examined, which proposes a new perspective on the integrated device. We anticipate that this review will help the readership understand the fundamentals, current state, and issues on TFTs and QLEDs for future AM-QLED displays.
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Affiliation(s)
- Geun Woo Baek
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of Korea
| | - Yeon Jun Kim
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of Korea
| | - Minhyung Lee
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of Korea
| | - Yeunwoo Kwon
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of Korea
| | - Beomsoo Chun
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of Korea
| | - Ganghyun Park
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of Korea
| | - Hansol Seo
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of Korea
| | - Heesun Yang
- Department of Materials Science and Engineering, Hongik University, Seoul 04066, Republic of Korea
| | - Jeonghun Kwak
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of Korea
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