High density integration of stretchable inorganic thin film transistors with excellent performance and reliability

Strain-Sensor-In-Pixel Technology for Resolution-Sustainable Stretchable Displays

One of the limitations of stretchable displays is the severe degradation of resolution or the decrease in the number of pixels per unit area when stretched. Hence, we suggest a strain-sensor-in-pixel (S-SIP) system through the adoption of hidden pixels that are activated only during the stretch mode for maintaining the density of on-state pixels. For the S-SIP system, the gate and source electrodes of InGaZnO thin-film transistors (TFTs) in an existing pixel are connected to a resistive strain sensor through the facile and selective deposition of silver nanowires (AgNWs) via electrohydrodynamic-jet-printing. With this approach, the strain sensor integrated TFT functions as a strain-triggered switch, which responds only to stretching along the designated axes by finely tuning the orientation and cycles of AgNW printing. The strain sensor-integrated TFT remains in an off-state when unstretched and switches to an on-state when stretched, exhibiting a large negative gauge factor of -1.1 × 1010 and a superior mechanical stability enduring 6000 cycles, which enables the efficient structure to operate hidden pixels without requiring additional signal processing. Furthermore, the stable operation of the S-SIP in a 5 × 5-pixel array is demonstrated via circuit simulation, implying the outstanding applicability and process compatibility to the conventional active-matrix display backplanes.

Stretchable OLEDs based on a hidden active area for high fill factor and resolution compensation

Stretchable organic light-emitting diodes (OLEDs) have emerged as promising optoelectronic devices with exceptional degree of freedom in form factors. However, stretching OLEDs often results in a reduction in the geometrical fill factor (FF), that is the ratio of an active area to the total area, thereby limiting their potential for a broad range of applications. To overcome these challenges, we propose a three-dimensional (3D) architecture adopting a hidden active area that serves a dual role as both an emitting area and an interconnector. For this purpose, an ultrathin OLED is first attached to a 3D rigid island array structure through quadaxial stretching for precise, deformation-free alignment. A portion of the ultrathin OLED is concealed by letting it 'fold in' between the adjacent islands in the initial, non-stretched condition and gradually surfaces to the top upon stretching. This design enables the proposed stretchable OLEDs to exhibit a relatively high FF not only in the initial state but also after substantial deformation corresponding to a 30% biaxial system strain. Moreover, passive-matrix OLED displays that utilize this architecture are shown to be configurable for compensation of post-stretch resolution loss, demonstrating the efficacy of the proposed approach in realizing the full potential of stretchable OLEDs.

MXene-Based Flexible Electrodes for Electrophysiological Monitoring

The advancement of flexible electrodes triggered research on wearables and health monitoring applications. Metal-based bioelectrodes encounter low mechanical strength and skin discomfort at the electrode-skin interface. Thus, recent research has focused on the development of flexible surface electrodes with low electrochemical resistance and high conductivity. This study investigated the development of a novel, flexible, surface electrode based on a MXene/polydimethylsiloxane (PDMS)/glycerol composite. MXenes offer the benefit of featuring highly conductive transition metals with metallic properties, including a group of carbides, nitrides, and carbonitrides, while PDMS exhibits inherent biostability, flexibility, and biocompatibility. Among the various MXene-based electrode compositions prepared in this work, those composed of 15% and 20% MXene content were further evaluated for their potential in electrophysiological sensing applications. The samples underwent a range of characterization techniques, including electrochemical impedance spectroscopy (EIS), cyclic voltammetry (CV), as well as mechanical and bio-signal sensing from the skin. The experimental findings indicated that the compositions demonstrated favorable bulk impedances of 280 and 111 Ω, along with conductivities of 0.462 and 1.533 mS/cm, respectively. Additionally, they displayed promising electrochemical stability, featuring charge storage densities of 0.665 mC/cm2 and 1.99 mC/cm2, respectively. By conducting mechanical tests, Young's moduli were determined to be 2.61 MPa and 2.18 MPa, respectively. The composite samples exhibited elongation of 139% and 144%, respectively. Thus, MXene-based bioelectrodes show promising potential for flexible and wearable electronics and bio-signal sensing applications.

Full-color fiber light-emitting diodes based on perovskite quantum wires

Fiber light-emitting diodes (Fi-LEDs), which can be used for wearable lighting and display devices, are one of the key components for fiber/textile electronics. However, there exist a number of impediments to overcome on device fabrication with fiber-like substrates, as well as on device encapsulations. Here, we uniformly grew all-inorganic perovskite quantum wire arrays by filling high-density alumina nanopores on the surface of Al fibers with a dip-coating process. With a two-step evaporation method to coat a surrounding transporting layer and semitransparent electrode, we successfully fabricated full-color Fi-LEDs with emission peaks at 625 nanometers (red), 512 nanometers (green), and 490 nanometers (sky-blue), respectively. Intriguingly, additional polydimethylsiloxane packaging helps instill the mechanical bendability, stretchability, and waterproof feature of Fi-LEDs. The plasticity of Al fiber also allows the one-dimensional architecture Fi-LED to be shaped and constructed for two-dimensional or even three-dimensional architectures, opening up a new vista for advanced lighting with unconventional formfactors.

Reduced Graphene Oxide/Cellulose Sodium Aerogel-Supported Eutectic Phase Change Material Gel Demonstrating Superior Energy Conversion and Storage Capacity toward High-Performance Personal Thermal Management

By virtue of their capacity to absorb and release energy during the phase change process, phase change materials (PCMs) are ideal for personal thermal management (PTM). The combination of reduced graphene oxide/cellulose sodium aerogel (rGCA) and lauric acid/myristic acid binary eutectic phase change gel (LMG) creates a composite phase change material that possesses outstanding photothermal conversion capabilities, electro-thermal conversion capabilities, energy storage capabilities, and shape-stable performance. The results showed that rGCA had a maximum adsorption efficiency of 99.7% with a melting latent heat of 124.6 J g-1. The high absorption rate of rGCA to LMG is a result of the capillary force, pore characteristics, hydrogen bonding, and the π-π interaction. Notably, rGCA and LMG composite material (rGCG) exhibited an excellent photothermal conversion efficiency of 96.5% and electro-thermal conversion of 82.3%. Results indicate that binary eutectic phase change materials are more suitable for temperature regulation than single phase change materials, making them more suitable for PTM. It is anticipated that the innovative thermal comfort solution, which provides thermal shielding, thermal energy storage, self-supporting characteristics, and wearability, will offer new possibilities for the next generation of wearable PTMs.

All-Solution-Processed High-Performance MoS2 Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric

Assembling solution-processed van der Waals (vdW) materials into thin films holds great promise for constructing large-scale, high-performance thin-film electronics, especially at low temperatures. While transition metal dichalcogenide thin films assembled in solution have shown potential as channel materials, fully solution-processed vdW electronics have not been achieved due to the absence of suitable dielectric materials and high-temperature processing. In this work, we report on all-solution-processedvdW thin-film transistors (TFTs) comprising molybdenum disulfides (MoS2) as the channel and Dion-Jacobson-phase perovskite oxides as the high-permittivity dielectric. The constituent layers are prepared as colloidal solutions through electrochemical exfoliation of bulk crystals, followed by sequential assembly into a semiconductor/dielectric heterostructure for TFT construction. Notably, all fabrication processes are carried out at temperatures below 250 °C. The fabricated MoS2 TFTs exhibit excellent device characteristics, including high mobility (>10 cm2 V-1 s-1) and an on/off ratio exceeding 106. Additionally, the use of a high-k dielectric allows for operation at low voltage (∼5 V) and leakage current (∼10-11 A), enabling low power consumption. Our demonstration of the low-temperature fabrication of high-performance TFTs presents a cost-effective and scalable approach for heterointegrated thin-film electronics.

One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature

Amorphous InGaZnO (a-InGaZnO) is currently the most prominent oxide semiconductor complement to low-temperature polysilicon for thin-film transistor (TFT) applications in next-generation displays. However, balancing the transmission performance and low-temperature deposition is the primary obstacle in the application of a-InGaZnO TFTs in the field of ultra-high resolution optoelectronic display. Here, we report that a-InGaZnO:O TFT prepared at room temperature has high transport performance, manipulating oxygen vacancy (V_O) defects through an oxygen-doped a-InGaZnO framework. The main electrical properties of a-InGaZnO:O TFTs included high field-effect mobility (µ_FE) of 28 cm²/V s, a threshold voltage (V_th) of 0.9 V, a subthreshold swing (SS) of 0.9 V/dec, and a current switching ratio (I_on/I_off) of 10⁷; significant improvements over a-InGaZnO TFTs without oxygen plasma. A possible reason for this is that appropriate oxygen plasma treatment and room temperature preparation technology jointly play a role in improving the electrical performance of a-InGaZnO TFTs, which could not only increase carrier concentration, but also reduce the channel-layer surface defects and interface trap density of a-InGaZnO TFTs. These provides a powerful way to synergistically boost the transport performance of oxide TFTs fabricated at room temperature.