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Zhao X, Zou H, Wang M, Wang J, Wang T, Wang L, Chen X. Conformal Neuromorphic Bioelectronics for Sense Digitalization. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2403444. [PMID: 38934554 DOI: 10.1002/adma.202403444] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/07/2024] [Revised: 06/03/2024] [Indexed: 06/28/2024]
Abstract
Sense digitalization, the process of transforming sensory experiences into digital data, is an emerging research frontier that links the physical world with human perception and interaction. Inspired by the adaptability, fault tolerance, robustness, and energy efficiency of biological senses, this field drives the development of numerous innovative digitalization techniques. Neuromorphic bioelectronics, characterized by biomimetic adaptability, stand out for their seamless bidirectional interactions with biological entities through stimulus-response and feedback loops, incorporating bio-neuromorphic intelligence for information exchange. This review illustrates recent progress in sensory digitalization, encompassing not only the digital representation of physical sensations such as touch, light, and temperature, correlating to tactile, visual, and thermal perceptions, but also the detection of biochemical stimuli such as gases, ions, and neurotransmitters, mirroring olfactory, gustatory, and neural processes. It thoroughly examines the material design, device manufacturing, and system integration, offering detailed insights. However, the field faces significant challenges, including the development of new device/system paradigms, forging genuine connections with biological systems, ensuring compatibility with the semiconductor industry and overcoming the absence of standardization. Future ambition includes realization of biocompatible neural prosthetics, exoskeletons, soft humanoid robots, and cybernetic devices that integrate smoothly with both biological tissues and artificial components.
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Affiliation(s)
- Xiao Zhao
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory of Smart Biomaterials and Theranostic Technology, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Haochen Zou
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory of Smart Biomaterials and Theranostic Technology, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Ming Wang
- Frontier Institute of Chip and System, State Key Laboratory of Integrated Chips and Systems, Fudan University, Shanghai, 200433, China
| | - Jianwu Wang
- Institute for Digital Molecular Analytics and Science (IDMxS), Nanyang Technological University, 59 Nanyang Drive, Singapore, 636921, Singapore
- Innovative Centre for Flexible Devices (iFLEX) Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Ting Wang
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory of Smart Biomaterials and Theranostic Technology, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Lianhui Wang
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory of Smart Biomaterials and Theranostic Technology, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Xiaodong Chen
- Institute for Digital Molecular Analytics and Science (IDMxS), Nanyang Technological University, 59 Nanyang Drive, Singapore, 636921, Singapore
- Innovative Centre for Flexible Devices (iFLEX) Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
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Zhou Z, Wu Y, Pan K, Zhu D, Li Z, Yan S, Xin Q, Wang Q, Qian X, Xiu F, Huang W, Liu J. A memristive-photoconductive transduction methodology for accurately nondestructive memory readout. LIGHT, SCIENCE & APPLICATIONS 2024; 13:175. [PMID: 39043644 PMCID: PMC11266504 DOI: 10.1038/s41377-024-01519-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2024] [Revised: 06/11/2024] [Accepted: 07/01/2024] [Indexed: 07/25/2024]
Abstract
Crossbar resistive memory architectures enable high-capacity storage and neuromorphic computing, accurate retrieval of the stored information is a prerequisite during read operation. However, conventional electrical readout normally suffer from complicated process, inaccurate and destructive reading due to crosstalk effect from sneak path current. Here we report a memristive-photoconductive transduction (MPT) methodology for precise and nondestructive readout in a memristive crossbar array. The individual devices present dynamic filament form/fuse for resistance modulation under electric stimulation, which leads to photogenerated carrier transport for tunable photoconductive response under subsequently light pulse stimuli. This coherent signal transduction can be used to directly detect the memorized on/off states stored in each cell, and a prototype 4 * 4 crossbar memories has been constructed and validated for the fidelity of crosstalk-free readout in recall process.
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Affiliation(s)
- Zhe Zhou
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Yueyue Wu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Keyuan Pan
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Duoyi Zhu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Zifan Li
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Shiqi Yan
- Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan, 250100, China
| | - Qian Xin
- Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan, 250100, China
| | - Qiye Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Xinkai Qian
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Fei Xiu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
- Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an, 710072, China
| | - Juqing Liu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
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3
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Yao J, Wang Q, Zhang Y, Teng Y, Li J, Zhao P, Zhao C, Hu Z, Shen Z, Liu L, Tian D, Qiu S, Wang Z, Kang L, Li Q. Ultra-low power carbon nanotube/porphyrin synaptic arrays for persistent photoconductivity and neuromorphic computing. Nat Commun 2024; 15:6147. [PMID: 39034334 PMCID: PMC11271480 DOI: 10.1038/s41467-024-50490-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/23/2024] [Accepted: 07/10/2024] [Indexed: 07/23/2024] Open
Abstract
Developing devices with a wide-temperature range persistent photoconductivity (PPC) and ultra-low power consumption remains a significant challenge for optical synaptic devices used in neuromorphic computing. By harnessing the PPC properties in materials, it can achieve optical storage and neuromorphic computing, surpassing the von Neuman architecture-based systems. However, previous research implemented PPC required additional gate voltages and low temperatures, which need additional energy consumption and PPC cannot be achieved across a wide temperature range. Here, we fabricated a simple heterojunctions using zinc(II)-meso-tetraphenyl porphyrin (ZnTPP) and single-walled carbon nanotubes (SWCNTs). By leveraging the strong binding energy at the heterojunction interface and the unique band structure, the heterojunction achieved PPC over an exceptionally wide temperature range (77 K-400 K). Remarkably, it demonstrated nonvolatile storage for up to 2×104 s, without additional gate voltage. The minimum energy consumption for each synaptic event is as low as 6.5 aJ. Furthermore, we successfully demonstrate the feasibility to manufacture a flexible wafer-scale array utilizing this heterojunction. We applied it to autonomous driving under extreme temperatures and achieved as a high impressive accuracy rate as 94.5%. This tunable and stable wide-temperature PPC capability holds promise for ultra-low-power neuromorphic computing.
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Affiliation(s)
- Jian Yao
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Qinan Wang
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
- School of Advanced Technology, Xi'an Jiaotong-Liverpool University, Suzhou, 215123, China
| | - Yong Zhang
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Yu Teng
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Jing Li
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Pin Zhao
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Chun Zhao
- School of Advanced Technology, Xi'an Jiaotong-Liverpool University, Suzhou, 215123, China.
| | - Ziyi Hu
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Zongjie Shen
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Liwei Liu
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Dan Tian
- College of Materials Science and Engineering, Co-Innovation Center of Effiicient Processing and Utilization of Forest Resources, Nanjing Forestry University, Nanjing, 210037, China
| | - Song Qiu
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
| | - Zhongrui Wang
- Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam Road, Hong Kong SAR, 999077, China
| | - Lixing Kang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China.
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
| | - Qingwen Li
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China.
- Advanced Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China.
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Chen Q, Cao J, Yang Z, Wang Z, Wang J, Yu S, Hao C, Wang N, Li H, Huang X. Heterointerface engineering of layered double hydroxide/MAPbBr 3 heterostructures enabling tunable synapse behaviors in a two-terminal optoelectronic device. NANOSCALE HORIZONS 2024; 9:1023-1029. [PMID: 38602167 DOI: 10.1039/d4nh00066h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2024]
Abstract
Solution-processable semiconductor heterostructures enable scalable fabrication of high performance electronic and optoelectronic devices with tunable functions via heterointerface control. In particular, artificial optical synapses require interface manipulation for nonlinear signal processing. However, the limited combinations of materials for heterostructure construction have restricted the tunability of synaptic behaviors with simple device configurations. Herein, MAPbBr3 nanocrystals were hybridized with MgAl layered double hydroxide (LDH) nanoplates through a room temperature self-assembly process. The formation of such heterostructures, which exhibited an epitaxial relationship, enabled effective hole transfer from MAPbBr3 to LDH, and greatly reduced the defect states in MAPbBr3. Importantly, the ion-conductive nature of LDH and its ability to form a charged surface layer even under low humidity conditions allowed it to attract and trap holes from MAPbBr3. This imparted tunable synaptic behaviors and short-term plasticity (STP) to long-term plasticity (LTP) transition to a two-terminal device based on the LDH-MAPbBr3 heterostructures. The further neuromorphic computing simulation under varying humidity conditions showcased their potential in learning and recognition tasks under ambient conditions. Our work presents a new type of epitaxial heterostructure comprising metal halide perovskites and layered ion-conductive materials, and provides a new way of realizing charge-trapping induced synaptic behaviors.
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Affiliation(s)
- Qian Chen
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China.
| | - Jiacheng Cao
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China.
| | - Zhiwei Yang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211800, China
| | - Zeyi Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211800, China
| | - Jian Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211800, China
| | - Shilong Yu
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211800, China
| | - Chenjie Hao
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211800, China
| | - Nana Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211800, China
| | - Hai Li
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211800, China
| | - Xiao Huang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China.
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211800, China
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5
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Yu X, Ji Y, Shen X, Le X. Progress in Advanced Infrared Optoelectronic Sensors. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:845. [PMID: 38786801 PMCID: PMC11123936 DOI: 10.3390/nano14100845] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2024] [Revised: 05/09/2024] [Accepted: 05/10/2024] [Indexed: 05/25/2024]
Abstract
Infrared optoelectronic sensors have attracted considerable research interest over the past few decades due to their wide-ranging applications in military, healthcare, environmental monitoring, industrial inspection, and human-computer interaction systems. A comprehensive understanding of infrared optoelectronic sensors is of great importance for achieving their future optimization. This paper comprehensively reviews the recent advancements in infrared optoelectronic sensors. Firstly, their working mechanisms are elucidated. Then, the key metrics for evaluating an infrared optoelectronic sensor are introduced. Subsequently, an overview of promising materials and nanostructures for high-performance infrared optoelectronic sensors, along with the performances of state-of-the-art devices, is presented. Finally, the challenges facing infrared optoelectronic sensors are posed, and some perspectives for the optimization of infrared optoelectronic sensors are discussed, thereby paving the way for the development of future infrared optoelectronic sensors.
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Affiliation(s)
- Xiang Yu
- School of Physics, Beihang University, Beijing 100191, China
- Beijing Advanced Innovation Center for Big Data-Based Precision Medicine, School of Medicine and Engineering, Beihang University, Beijing 100191, China
- Beijing Key Laboratory of Advanced Nuclear Energy Materials and Physics, Beihang University, Beijing 100191, China
| | - Yun Ji
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore
| | - Xinyi Shen
- School of Physics, Beihang University, Beijing 100191, China
- Beijing Advanced Innovation Center for Big Data-Based Precision Medicine, School of Medicine and Engineering, Beihang University, Beijing 100191, China
- Beijing Key Laboratory of Advanced Nuclear Energy Materials and Physics, Beihang University, Beijing 100191, China
| | - Xiaoyun Le
- School of Physics, Beihang University, Beijing 100191, China
- Beijing Advanced Innovation Center for Big Data-Based Precision Medicine, School of Medicine and Engineering, Beihang University, Beijing 100191, China
- Beijing Key Laboratory of Advanced Nuclear Energy Materials and Physics, Beihang University, Beijing 100191, China
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Chen K, Pan K, He S, Liu R, Zhou Z, Zhu D, Liu Z, He Z, Sun H, Wang M, Wang K, Tang M, Liu J. Mimicking Bidirectional Inhibitory Synapse Using a Porous-Confined Ionic Memristor with Electrolyte/Tris(4-aminophenyl)amine Neurotransmitter. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2400966. [PMID: 38483027 PMCID: PMC11109647 DOI: 10.1002/advs.202400966] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2024] [Indexed: 05/23/2024]
Abstract
Ionic memristors can emulate brain-like functions of biological synapses for neuromorphic technologies. Apart from the widely studied excitatory-excitatory and excitatory-inhibitory synapses, reports on memristors with the inhibitory-inhibitory synaptic behaviors remain a challenge. Here, the first biaxially inhibited artificial synapse is demonstrated, consisting of a solid electrolyte and conjugated microporous polymers bilayer as neurotransmitter, with the former serving as an ion reservoir and the latter acting as a confined transport. Due to the migration, trapping, and de-trapping of ions within the nanoslits, the device poses inhibitory synaptic plasticity under both positive and negative stimuli. Remarkably, the artificial synapse is able to maintain a low level of stable nonvolatile memory over a long period of time (≈60 min) after multiple stimuli, with feature-inferencing/-training capabilities of neural node in neuromorphic computing. This work paves a reliable strategy for constructing nanochannel ionic memristive materials toward fully inhibitory synaptic devices.
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Affiliation(s)
- Kang Chen
- School of Materials Science and EngineeringXiangtan UniversityNorth Second Ring Road, YuhuXiangtanHunan411105China
| | - Keyuan Pan
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)Nanjing Tech University (NanjingTech)30 South Puzhu RoadNanjing211816China
| | - Shang He
- School of Materials Science and EngineeringXiangtan UniversityNorth Second Ring Road, YuhuXiangtanHunan411105China
| | - Rui Liu
- School of Materials Science and EngineeringXiangtan UniversityNorth Second Ring Road, YuhuXiangtanHunan411105China
| | - Zhe Zhou
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)Nanjing Tech University (NanjingTech)30 South Puzhu RoadNanjing211816China
| | - Duoyi Zhu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)Nanjing Tech University (NanjingTech)30 South Puzhu RoadNanjing211816China
| | - Zhengdong Liu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)Nanjing Tech University (NanjingTech)30 South Puzhu RoadNanjing211816China
| | - Zixi He
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)Nanjing Tech University (NanjingTech)30 South Puzhu RoadNanjing211816China
| | - Hongchao Sun
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)Nanjing Tech University (NanjingTech)30 South Puzhu RoadNanjing211816China
| | - Min Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)Nanjing Tech University (NanjingTech)30 South Puzhu RoadNanjing211816China
| | - Kaili Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)Nanjing Tech University (NanjingTech)30 South Puzhu RoadNanjing211816China
| | - Minghua Tang
- School of Materials Science and EngineeringXiangtan UniversityNorth Second Ring Road, YuhuXiangtanHunan411105China
| | - Juqing Liu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)Nanjing Tech University (NanjingTech)30 South Puzhu RoadNanjing211816China
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Guo H, Guo J, Wang Y, Wang H, Cheng S, Wang Z, Miao Q, Xu X. An Organic Optoelectronic Synapse with Multilevel Memory Enabled by Gate Modulation. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38573883 DOI: 10.1021/acsami.3c19624] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/06/2024]
Abstract
Artificial synaptic devices are emerging as contenders for next-generation computing systems due to their combined advantages of self-adaptive learning mechanisms, high parallel computation capabilities, adjustable memory level, and energy efficiency. Optoelectronic devices are particularly notable for their responsiveness to both voltage inputs and light exposure, making them attractive for dynamic modulation. However, engineering devices with reconfigurable synaptic plasticity and multilevel memory within a singular configuration present a fundamental challenge. Here, we have established an organic transistor-based synaptic device that exhibits both volatile and nonvolatile memory characteristics, modulated through gate voltage together with light stimuli. Our device demonstrates a range of synaptic behaviors, including both short/long-term plasticity (STP and LTP) as well as STP-LTP transitions. Further, as an encoding unit, it delivers exceptional read current levels, achieving a program/erase current ratio exceeding 105, with excellent repeatability. Additionally, a prototype 4 × 4 matrix demonstrates potential in practical neuromorphic systems, showing capabilities in the perception, processing, and memory retention of image inputs.
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Affiliation(s)
- Haotian Guo
- Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
| | - Jing Guo
- Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
| | - Yujing Wang
- Department of Chemistry, Chinese University of Hong Kong, Shatin, New Territories, Hong Kong 999077, China
| | - Hezhen Wang
- Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
| | - Simin Cheng
- Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
| | - Zehao Wang
- Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
| | - Qian Miao
- Department of Chemistry, Chinese University of Hong Kong, Shatin, New Territories, Hong Kong 999077, China
| | - Xiaomin Xu
- Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
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Ma H, Fang H, Xie X, Liu Y, Tian H, Chai Y. Optoelectronic Synapses Based on MXene/Violet Phosphorus van der Waals Heterojunctions for Visual-Olfactory Crossmodal Perception. NANO-MICRO LETTERS 2024; 16:104. [PMID: 38300424 PMCID: PMC10834395 DOI: 10.1007/s40820-024-01330-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2023] [Accepted: 12/11/2023] [Indexed: 02/02/2024]
Abstract
The crossmodal interaction of different senses, which is an important basis for learning and memory in the human brain, is highly desired to be mimicked at the device level for developing neuromorphic crossmodal perception, but related researches are scarce. Here, we demonstrate an optoelectronic synapse for vision-olfactory crossmodal perception based on MXene/violet phosphorus (VP) van der Waals heterojunctions. Benefiting from the efficient separation and transport of photogenerated carriers facilitated by conductive MXene, the photoelectric responsivity of VP is dramatically enhanced by 7 orders of magnitude, reaching up to 7.7 A W-1. Excited by ultraviolet light, multiple synaptic functions, including excitatory postsynaptic currents, paired-pulse facilitation, short/long-term plasticity and "learning-experience" behavior, were demonstrated with a low power consumption. Furthermore, the proposed optoelectronic synapse exhibits distinct synaptic behaviors in different gas environments, enabling it to simulate the interaction of visual and olfactory information for crossmodal perception. This work demonstrates the great potential of VP in optoelectronics and provides a promising platform for applications such as virtual reality and neurorobotics.
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Affiliation(s)
- Hailong Ma
- Center for Advancing Materials Performance From the Nanoscale (CAMP-Nano), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Huajing Fang
- Center for Advancing Materials Performance From the Nanoscale (CAMP-Nano), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China.
| | - Xinxing Xie
- Center for Advancing Materials Performance From the Nanoscale (CAMP-Nano), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Yanming Liu
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China
| | - He Tian
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China.
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, People's Republic of China.
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9
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Kim J, Lee J, Lee JM, Facchetti A, Marks TJ, Park SK. Recent Advances in Low-Dimensional Nanomaterials for Photodetectors. SMALL METHODS 2024; 8:e2300246. [PMID: 37203281 DOI: 10.1002/smtd.202300246] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2023] [Revised: 04/21/2023] [Indexed: 05/20/2023]
Abstract
New emerging low-dimensional such as 0D, 1D, and 2D nanomaterials have attracted tremendous research interests in various fields of state-of-the-art electronics, optoelectronics, and photonic applications due to their unique structural features and associated electronic, mechanical, and optical properties as well as high-throughput fabrication for large-area and low-cost production and integration. Particularly, photodetectors which transform light to electrical signals are one of the key components in modern optical communication and developed imaging technologies for whole application spectrum in the daily lives, including X-rays and ultraviolet biomedical imaging, visible light camera, and infrared night vision and spectroscopy. Today, diverse photodetector technologies are growing in terms of functionality and performance beyond the conventional silicon semiconductor, and low-dimensional nanomaterials have been demonstrated as promising potential platforms. In this review, the current states of progress on the development of these nanomaterials and their applications in the field of photodetectors are summarized. From the elemental combination for material design and lattice structure to the essential investigations of hybrid device architectures, various devices and recent developments including wearable photodetectors and neuromorphic applications are fully introduced. Finally, the future perspectives and challenges of the low-dimensional nanomaterials based photodetectors are also discussed.
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Affiliation(s)
- Jaehyun Kim
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Junho Lee
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, South Korea
| | - Jong-Min Lee
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, South Korea
| | - Antonio Facchetti
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Tobin J Marks
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Sung Kyu Park
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, South Korea
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10
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Dong X, Chen C, Pan K, Li Y, Zhang Z, He Z, Liu B, Zhou Z, Wu Y, Zhang D, Sun H, Qian X, Xu M, Huang W, Liu J. Nearly Panoramic Neuromorphic Vision with Transparent Photosynapses. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2303944. [PMID: 37635198 PMCID: PMC10602561 DOI: 10.1002/advs.202303944] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/15/2023] [Revised: 07/25/2023] [Indexed: 08/29/2023]
Abstract
Neuromorphic vision based on photonic synapses has the ability to mimic sensitivity, adaptivity, and sophistication of bio-visual systems. Significant advances in artificial photosynapses are achieved recently. However, conventional photosyanptic devices normally employ opaque metal conductors and vertical device configuration, performing a limited hemispherical field of view. Here, a transparent planar photonic synapse (TPPS) is presented that offers dual-side photosensitive capability for nearly panoramic neuromorphic vision. The TPPS consisting of all two dimensional (2D) carbon-based derivatives exhibits ultra-broadband photodetecting (365-970 nm) and ≈360° omnidirectional viewing angle. With its intrinsic persistent photoconductivity effect, the detector possesses bio-synaptic behaviors such as short/long-term memory, experience learning, light adaptation, and a 171% pair-pulse-facilitation index, enabling the synapse array to achieve image recognition enhancement (92%) and moving object detection.
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Affiliation(s)
- Xuemei Dong
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Chen Chen
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Keyuan Pan
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Yinxiang Li
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Zicheng Zhang
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Zixi He
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Bin Liu
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Zhe Zhou
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Yueyue Wu
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Dengfeng Zhang
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Hongchao Sun
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Xinkai Qian
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Min Xu
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & EngineeringNorthwestern Polytechnical UniversityXi'an710072China
| | - Juqing Liu
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM)Nanjing Tech University (Nanjing Tech)30 South Puzhu RoadNanjing211816China
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11
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Battisti A, Samal SK, Puppi D. Biosensing Systems Based on Graphene Oxide Fluorescence Quenching Effect. MICROMACHINES 2023; 14:1522. [PMID: 37630058 PMCID: PMC10456591 DOI: 10.3390/mi14081522] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Revised: 07/20/2023] [Accepted: 07/26/2023] [Indexed: 08/27/2023]
Abstract
Graphene oxide (GO) is a versatile material obtained by the strong oxidation of graphite. Among its peculiar properties, there is the outstanding ability to significantly alter the fluorescence of many common fluorophores and dyes. This property has been exploited in the design of novel switch-ON and switch-OFF fluorescence biosensing platforms for the detection of a plethora of biomolecules, especially pathological biomarkers and environmental contaminants. Currently, novel advanced strategies are being developed for therapeutic, diagnostic and theranostic approaches to widespread pathologies caused by viral or bacterial agents, as well as to cancer. This work illustrates an overview of the most recent applications of GO-based sensing systems relying on its fluorescence quenching effect.
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Affiliation(s)
- Antonella Battisti
- NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, p.zza San Silvestro 12, I-56127 Pisa, Italy
| | - Sangram Keshari Samal
- Laboratory of Biomaterials and Regenerative Medicine for Advanced Therapies, ICMR-RMRC, Bhubaneswar 751023, Odisha, India;
| | - Dario Puppi
- BIOLab Research Group, Department of Chemistry and Industrial Chemistry, University of Pisa, UdR INSTM Pisa, Via Moruzzi 13, I-56124 Pisa, Italy;
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Zhang C, Chen M, Pan Y, Li Y, Wang K, Yuan J, Sun Y, Zhang Q. Carbon Nanodots Memristor: An Emerging Candidate toward Artificial Biosynapse and Human Sensory Perception System. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2207229. [PMID: 37072642 PMCID: PMC10238223 DOI: 10.1002/advs.202207229] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/06/2022] [Revised: 03/09/2023] [Indexed: 05/03/2023]
Abstract
In the era of big data and artificial intelligence (AI), advanced data storage and processing technologies are in urgent demand. The innovative neuromorphic algorithm and hardware based on memristor devices hold a promise to break the von Neumann bottleneck. In recent years, carbon nanodots (CDs) have emerged as a new class of nano-carbon materials, which have attracted widespread attention in the applications of chemical sensors, bioimaging, and memristors. The focus of this review is to summarize the main advances of CDs-based memristors, and their state-of-the-art applications in artificial synapses, neuromorphic computing, and human sensory perception systems. The first step is to systematically introduce the synthetic methods of CDs and their derivatives, providing instructive guidance to prepare high-quality CDs with desired properties. Then, the structure-property relationship and resistive switching mechanism of CDs-based memristors are discussed in depth. The current challenges and prospects of memristor-based artificial synapses and neuromorphic computing are also presented. Moreover, this review outlines some promising application scenarios of CDs-based memristors, including neuromorphic sensors and vision, low-energy quantum computation, and human-machine collaboration.
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Affiliation(s)
- Cheng Zhang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy ApplicationSchool of Physical Science and TechnologySuzhou University of Science and TechnologySuzhouJiangsu215009China
| | - Mohan Chen
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy ApplicationSchool of Physical Science and TechnologySuzhou University of Science and TechnologySuzhouJiangsu215009China
| | - Yelong Pan
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy ApplicationSchool of Physical Science and TechnologySuzhou University of Science and TechnologySuzhouJiangsu215009China
| | - Yang Li
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy ApplicationSchool of Physical Science and TechnologySuzhou University of Science and TechnologySuzhouJiangsu215009China
| | - Kuaibing Wang
- Jiangsu Key Laboratory of Pesticide SciencesDepartment of ChemistryCollege of ScienceNanjing Agricultural UniversityNanjing210095China
| | - Junwei Yuan
- School of Chemistry and Life SciencesSuzhou University of Science and TechnologySuzhouJiangsu215009China
| | - Yanqiu Sun
- School of Chemistry and Life SciencesSuzhou University of Science and TechnologySuzhouJiangsu215009China
| | - Qichun Zhang
- Department of Materials Science and EngineeringDepartment of Chemistry and Center of Super‐Diamond and Advanced Films (COSDAF)City University of Hong Kong83 Tat Chee AvenueHong Kong999077China
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13
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Pang J, Peng S, Hou C, Zhao H, Fan Y, Ye C, Zhang N, Wang T, Cao Y, Zhou W, Sun D, Wang K, Rümmeli MH, Liu H, Cuniberti G. Applications of Graphene in Five Senses, Nervous System, and Artificial Muscles. ACS Sens 2023; 8:482-514. [PMID: 36656873 DOI: 10.1021/acssensors.2c02790] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/20/2023]
Abstract
Graphene remains of great interest in biomedical applications because of biocompatibility. Diseases relating to human senses interfere with life satisfaction and happiness. Therefore, the restoration by artificial organs or sensory devices may bring a bright future by the recovery of senses in patients. In this review, we update the most recent progress in graphene based sensors for mimicking human senses such as artificial retina for image sensors, artificial eardrums, gas sensors, chemical sensors, and tactile sensors. The brain-like processors are discussed based on conventional transistors as well as memristor related neuromorphic computing. The brain-machine interface is introduced for providing a single pathway. Besides, the artificial muscles based on graphene are summarized in the means of actuators in order to react to the physical world. Future opportunities remain for elevating the performances of human-like sensors and their clinical applications.
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Affiliation(s)
- Jinbo Pang
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, China
| | - Songang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center and Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Chongyang Hou
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, China
| | - Hongbin Zhao
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co. Ltd., Xinwai Street 2, Beijing 100088, People's Republic of China
| | - Yingju Fan
- School of Chemistry and Chemical Engineering, University of Jinan, Shandong, Jinan 250022, China
| | - Chen Ye
- School of Chemistry and Chemical Engineering, University of Jinan, Shandong, Jinan 250022, China
| | - Nuo Zhang
- School of Chemistry and Chemical Engineering, University of Jinan, Shandong, Jinan 250022, China
| | - Ting Wang
- State Key Laboratory of Biobased Material and Green Papermaking and People's Republic of China School of Bioengineering, Qilu University of Technology, Shandong Academy of Sciences, No. 3501 Daxue Road, Jinan 250353, People's Republic of China
| | - Yu Cao
- Key Laboratory of Modern Power System Simulation and Control & Renewable Energy Technology (Ministry of Education) and School of Electrical Engineering, Northeast Electric Power University, Jilin 132012, China
| | - Weijia Zhou
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, China
| | - Ding Sun
- School of Electrical and Computer Engineering, Jilin Jianzhu University, Changchun 130118, P. R. China
| | - Kai Wang
- School of Electrical Engineering, Weihai Innovation Research Institute, Qingdao University, Qingdao 266000, China
| | - Mark H Rümmeli
- Leibniz Institute for Solid State and Materials Research Dresden, Dresden, D-01171, Germany.,College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China.,Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie Sklodowskiej 34, Zabrze 41-819, Poland.,Institute for Complex Materials, IFW Dresden, 20 Helmholtz Strasse, Dresden 01069, Germany.,Center for Energy and Environmental Technologies, VŠB-Technical University of Ostrava, 17. Listopadu 15, Ostrava 708 33, Czech Republic
| | - Hong Liu
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, China.,State Key Laboratory of Crystal Materials, Center of Bio & Micro/Nano Functional Materials, Shandong University, 27 Shandanan Road, Jinan 250100, China
| | - Gianaurelio Cuniberti
- Institute for Materials Science and Max Bergmann Center of Biomaterials and Center for Advancing Electronics Dresden, Technische Universität Dresden, Dresden 01069, Germany
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14
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Shen R, Jiang Y, Li Z, Tian J, Li S, Li T, Chen Q. Near-Infrared Artificial Optical Synapse Based on the P(VDF-TrFE)-Coated InAs Nanowire Field-Effect Transistor. MATERIALS (BASEL, SWITZERLAND) 2022; 15:8247. [PMID: 36431733 PMCID: PMC9698720 DOI: 10.3390/ma15228247] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/22/2022] [Revised: 10/27/2022] [Accepted: 11/08/2022] [Indexed: 06/16/2023]
Abstract
Optical synapse is the basic component for optical neuromorphic computing and is attracting great attention, mainly due to its great potential in many fields, such as image recognition, artificial intelligence and artificial visual perception systems. However, optical synapse with infrared (IR) response has rarely been reported. InAs nanowires (NWs) have a direct narrow bandgap and a large surface to volume ratio, making them a promising material for IR detection. Here, we demonstrate a near-infrared (NIR) (750 to 1550 nm) optical synapse for the first time based on a poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))-coated InAs NW field-effect transistor (FET). The responsivity of the P(VDF-TrFE)-coated InAs NW FET reaches 839.3 A/W under 750 nm laser illumination, demonstrating the advantage of P(VDF-TrFE) coverage. The P(VDF-TrFE)-coated InAs NW device exhibits optical synaptic behaviors in response to NIR light pulses, including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF) and a transformation from short-term plasticity (STP) to long-term plasticity (LTP). The working mechanism is attributed to the polarization effect in the ferroelectric P(VDF-TrFE) layer, which dominates the trapping and de-trapping characteristics of photogenerated holes. These findings have significant implications for the development of artificial neural networks.
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Affiliation(s)
- Rui Shen
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
| | - Yifan Jiang
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
| | - Zhiwei Li
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
| | - Jiamin Tian
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
| | - Shuo Li
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
| | - Tong Li
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Qing Chen
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China
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