1
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Zhang Z, Hocking M, Peng Z, Pendharkar M, Courtney EDS, Hu J, Kastner MA, Goldhaber-Gordon D, Heinz TF, Mannix AJ. Phase-Selective Synthesis of Rhombohedral WS 2 Multilayers by Confined-Space Hybrid Metal-Organic Chemical Vapor Deposition. NANO LETTERS 2024. [PMID: 39373237 DOI: 10.1021/acs.nanolett.4c02766] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/08/2024]
Abstract
Rhombohedral polytype transition metal dichalcogenide (TMDC) multilayers exhibit non-centrosymmetric interlayer stacking, which yields intriguing properties such as ferroelectricity, a large second-order susceptibility coefficient χ(2), giant valley coherence, and a bulk photovoltaic effect. These properties have spurred significant interest in developing phase-selective growth methods for multilayer rhombohedral TMDC films. Here, we report a confined-space, hybrid metal-organic chemical vapor deposition method that preferentially grows 3R-WS2 multilayer films with thickness up to 130 nm. We confirm the 3R stacking structure via polarization-resolved second-harmonic generation characterization and the 3-fold symmetry revealed by anisotropic H2O2 etching. The multilayer 3R WS2 shows a dendritic morphology, which is indicative of diffusion-limited growth. Multilayer regions with large, stepped terraces enable layer-resolved evaluation of the optical properties of 3R-WS2 via Raman, photoluminescence, and differential reflectance spectroscopy. These measurements confirm the interfacial quality and suggest ferroelectric modification of the exciton energies.
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Affiliation(s)
- Zhepeng Zhang
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Marisa Hocking
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Zhenghan Peng
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Mihir Pendharkar
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Elijah David Solomon Courtney
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Physics, Stanford University, Stanford, California 94305, United States
| | - Jenny Hu
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
| | - Marc A Kastner
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Physics, Stanford University, Stanford, California 94305, United States
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - David Goldhaber-Gordon
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Physics, Stanford University, Stanford, California 94305, United States
| | - Tony F Heinz
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
- Department of Photon Sciences, Stanford University, Stanford, California 94305, United States
| | - Andrew J Mannix
- Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
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2
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Wang J, Li X, Ma X, Chen L, Liu JM, Duan CG, Íñiguez-González J, Wu D, Yang Y. Ultrafast Switching of Sliding Polarization and Dynamical Magnetic Field in van der Waals Bilayers Induced by Light. PHYSICAL REVIEW LETTERS 2024; 133:126801. [PMID: 39373442 DOI: 10.1103/physrevlett.133.126801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2024] [Revised: 05/03/2024] [Accepted: 08/14/2024] [Indexed: 10/08/2024]
Abstract
Sliding ferroelectricity is a unique type of polarity recently observed in van der Waals bilayers with a suitable stacking. However, electric-field control of sliding ferroelectricity is hard and could induce large coercive electric fields and serious leakage currents that corrode the ferroelectricity and electronic properties, which are essential for modern two-dimensional electronics and optoelectronics. Here, we proposed laser-pulse deterministic control of sliding polarization in bilayer hexagonal boron nitride by first principles and molecular dynamics simulation with machine-learned force fields. The laser pulses excite shear modes that exhibit certain directional movements of lateral sliding between bilayers. The vibration of excited modes under laser pulses is predicted to overcome the energy barrier and achieve the switching of sliding polarization. Furthermore, it is found that three possible sliding transitions-between AB (BA) and BA (AB) stacking-can lead to the occurrence of dynamical magnetic fields along three different directions. Remarkably, the magnetic fields are generated by the simple linear motion of nonmagnetic species, without any need for more exotic (circular, spiral) pathways. Such predictions of deterministic control of sliding polarization and multistates of dynamical magnetic field thus expand the potential applications of sliding ferroelectricity in memory and electronic devices.
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Affiliation(s)
- Jian Wang
- Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | - Xu Li
- Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | - Xingyue Ma
- Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | | | - Jun-Ming Liu
- Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | | | | | - Di Wu
- Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
| | - Yurong Yang
- Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
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3
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Wang Y, Zeng Z, Tian Z, Li C, Braun K, Huang L, Li Y, Luo X, Yi J, Wu G, Liu G, Li D, Zhou Y, Chen M, Wang X, Pan A. Sliding Ferroelectricity Induced Ultrafast Switchable Photovoltaic Response in ε-InSe Layers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2410696. [PMID: 39276006 DOI: 10.1002/adma.202410696] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/23/2024] [Revised: 09/04/2024] [Indexed: 09/16/2024]
Abstract
2D sliding ferroelectric semiconductors have greatly expanded the ferroelectrics family with the flexibility of bandgap and material properties, which hold great promise for ultrathin device applications that combine ferroelectrics with optoelectronics. Besides the induced different resistance states for non-volatile memories, the switchable ferroelectric polarizations can also modulate the photogenerated carriers for potentially ultrafast optoelectronic devices. Here, it is demonstrated that the room temperature sliding ferroelectricity can be used for ultrafast switchable photovoltaic response in ε-InSe layers. By first-principles calculations and experimental characterizations, it is revealed that the ferroelectricity with out-of-plane (OOP) polarization only exists in even layer ε-InSe. The ferroelectricity is also demonstrated in ε-InSe-based vertical devices, which exhibit high on-off ratios (≈104) and non-volatile storage capabilities. Moreover, the OOP ferroelectricity enables an ultrafast (≈3 ps) bulk photovoltaic response in the near-infrared band, rendering it a promising material for self-powered reconfigurable and ultrafast photodetector. This work reveals the essential role of ferroelectric polarization on the photogenerated carrier dynamics and paves the way for hybrid multifunctional ferroelectric and optoelectronic devices.
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Affiliation(s)
- Yufan Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zhouxiaosong Zeng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zhiqiang Tian
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China
| | - Cheng Li
- School of Physics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha, 410083, China
| | - Kai Braun
- Institute of Physical and Theoretical Chemistry and LISA+, University of Tübingen, 72076, Tübingen, Germany
| | - Lanyu Huang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Yang Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Xinyi Luo
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Jiali Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Guangcheng Wu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Guixian Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Yu Zhou
- School of Physics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha, 410083, China
| | - Mingxing Chen
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China
| | - Xiao Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Anlian Pan
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China
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4
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Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024; 124:9785-9865. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
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Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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5
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Sun W, Wang W, Yang C, Hu R, Yan S, Huang S, Cheng Z. Altermagnetism Induced by Sliding Ferroelectricity via Lattice Symmetry-Mediated Magnetoelectric Coupling. NANO LETTERS 2024; 24:11179-11186. [PMID: 39213606 DOI: 10.1021/acs.nanolett.4c02248] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/04/2024]
Abstract
Altermagnets, distinct from conventional ferromagnets or antiferromagnets, have recently attracted attention as the third category of collinear magnets, which exhibit the coexistence of zero net magnetization and spin polarization due to their unique lattice symmetries. Meanwhile, the additional layer degrees of freedom in multilayer sliding ferroelectrics offer opportunities for coupling with lattice symmetries, paving the way for an innovative approach to constructing multiferroic lattices. In this study, altermagnetic tuning in SnS2/MnPSe3/SnS2 heterostructures is achieved by breaking and restoration of lattice inversion symmetry through sliding ferroelectric switching. First-principles calculations reveal that the spin density and corresponding time-reversal symmetry of MnPSe3 can be manipulated by lattice symmetry, triggering phase transitions between antiferromagnetism and altermagnetism. This research establishes a novel form of magnetoelectric coupling mediated by lattice symmetry and provides a theoretical basis for the design of miniature information processing and memory devices based on altermagnetism.
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Affiliation(s)
- Wei Sun
- Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022, China
| | - Wenxuan Wang
- Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022, China
- School of Material Science and Engineering, University of Jinan, Jinan 250022, Shandong, China
| | - Changhong Yang
- Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022, China
| | - Riming Hu
- Institute for Smart Materials & Engineering, School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
| | - Shishen Yan
- Spintronics Institute, University of Jinan, Jinan 250022, China
| | - Shifeng Huang
- Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022, China
| | - Zhenxiang Cheng
- Institute for Superconducting & Electronic Materials, Australian Institute of Innovative Materials, University of Wollongong, Innovation Campus, Squires Way, North Wollongong, NSW 2500, Australia
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6
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Deb S, Krause J, Faria Junior PE, Kempf MA, Schwartz R, Watanabe K, Taniguchi T, Fabian J, Korn T. Excitonic signatures of ferroelectric order in parallel-stacked MoS 2. Nat Commun 2024; 15:7595. [PMID: 39217159 PMCID: PMC11366029 DOI: 10.1038/s41467-024-52011-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/02/2024] [Accepted: 08/22/2024] [Indexed: 09/04/2024] Open
Abstract
Interfacial ferroelectricity, prevalent in various parallel-stacked layered materials, allows switching of out-of-plane ferroelectric order by in-plane sliding of adjacent layers. Its resilience against doping potentially enables next-generation storage and logic devices. However, studies have been limited to indirect sensing or visualization of ferroelectricity. For transition metal dichalcogenides, there is little knowledge about the influence of ferroelectric order on their intrinsic valley and excitonic properties. Here, we report direct probing of ferroelectricity in few-layer 3R-MoS2 using reflectance contrast spectroscopy. Contrary to a simple electrostatic perception, layer-hybridized excitons with out-of-plane electric dipole moment remain decoupled from ferroelectric ordering, while intralayer excitons with in-plane dipole orientation are sensitive to it. Ab initio calculations identify stacking-specific interlayer hybridization leading to this asymmetric response. Exploiting this sensitivity, we demonstrate optical readout and control of multi-state polarization with hysteretic switching in a field-effect device. Time-resolved Kerr ellipticity reveals direct correspondence between spin-valley dynamics and stacking order.
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Affiliation(s)
- Swarup Deb
- Institute of Physics, University of Rostock, Albert-Einstein-Str. 23, Rostock, 18059, Germany.
| | - Johannes Krause
- Institute of Physics, University of Rostock, Albert-Einstein-Str. 23, Rostock, 18059, Germany
| | - Paulo E Faria Junior
- Institute for Theoretical Physics, University of Regensburg, 93040, Regensburg, Germany
| | - Michael Andreas Kempf
- Institute of Physics, University of Rostock, Albert-Einstein-Str. 23, Rostock, 18059, Germany
| | - Rico Schwartz
- Institute of Physics, University of Rostock, Albert-Einstein-Str. 23, Rostock, 18059, Germany
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, NIMS, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, NIMS, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Jaroslav Fabian
- Institute for Theoretical Physics, University of Regensburg, 93040, Regensburg, Germany
| | - Tobias Korn
- Institute of Physics, University of Rostock, Albert-Einstein-Str. 23, Rostock, 18059, Germany.
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7
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Cheng H, Chen H, Hu G, Yuan X, Ren J, Zhao X. Electrical Control of the Valley-Layer Hall Effect in Ferromagnetic Bilayer Lattices. J Phys Chem Lett 2024; 15:8759-8765. [PMID: 39163404 DOI: 10.1021/acs.jpclett.4c02090] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/22/2024]
Abstract
The layertronics based on the layer degree of freedom are of essential significance for the construction and application of new-generation electronic devices. Although the Hall layer effect has been realized theoretically and experimentally, it is mainly based on topological and antiferromagnetic lattices. On the basis of the low-energy effective k·p model, the mechanism of the controllable valley-layer Hall effect (V-LHE) in a bilayer ferromagnetic lattice through interlayer sliding has been proposed. Due to the broken time-reversal and inversion symmetries, the V-LHE based on the valley, layer degree of freedom, ferromagnetism, and ferroelectricity can be predicted. In addition, valley and layer indexes can be controlled by magnetization orientation and slipping, respectively. The mechanism can be demonstrated in the real bilayer CrSI lattice through first-principles calculations. Moreover, V-LHE can be effectively tuned by the perpendicular external electric field in configurations without out-of-plane polarization. These findings provide a new platform for the research of valleytronics and layertronics.
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Affiliation(s)
- Haomiao Cheng
- School of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250358, People's Republic of China
| | - Hongxin Chen
- School of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250358, People's Republic of China
| | - Guichao Hu
- School of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250358, People's Republic of China
| | - Xiaobo Yuan
- School of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250358, People's Republic of China
| | - Junfeng Ren
- School of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250358, People's Republic of China
- Shandong Provincial Engineering and Technical Center of Light Manipulations & Institute of Materials and Clean Energy, Shandong Normal University, Jinan, Shandong 250358, People's Republic of China
| | - Xiuwen Zhao
- School of Physics and Electronics, Shandong Normal University, Jinan, Shandong 250358, People's Republic of China
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8
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Hu H, Zeng G, Ouyang G. Theoretical design of rhombohedral-stacked MoS 2-based ferroelectric tunneling junctions with ultra-high tunneling electroresistances. Phys Chem Chem Phys 2024; 26:22549-22557. [PMID: 39150538 DOI: 10.1039/d4cp02278e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/17/2024]
Abstract
The sliding ferroelectrics formed by rhombohedral-stacked transition metal dichalcogenides (R-TMDs) greatly broaden the ferroelectric candidate materials. However, the weak ferroelectricity and many failure behaviors (such as irreversible lattice strains or defects) regulated by applied stimuli hinder their application. Here we systematically explore the interface electronic and transport properties of R-MoS2-based van der Waals heterojunctions (vdWHJs) by first-principles calculations. We find that the polarization and the band non-degeneracy of 2R-MoS2 increase with decreasing interlayer distance (d1). Moreover, the polarization direction of graphene (Gra)/2R-MoS2 P↑ state can be switched with a small increase in d1 (about 0.124 Å) due to the weakening of the polarization field (Ep) by a built-in electric field (Ei). The equilibrium state of superposition (|Ep + Ei|) or weakening (|Ep - Ei|) can be modulated by interface distances, which prompts vertical strain-regulated polarization or Schottky barriers. Furthermore, Gra/2R-MoS2 and Gra/R-MoS2/WS2 vdW ferroelectric tunneling junctions (FTJs) demonstrate ultra-high tunneling electroresistance (TER) ratios of 1.55 × 105 and 2.61 × 106, respectively, as the polarization direction switches. Our results provide an avenue for the design of future R-TMD vdW FTJs.
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Affiliation(s)
- Huamin Hu
- School of Materials Science and Engineering, Changsha University of Science and Technology, Changsha 410114, China.
| | - Guang Zeng
- School of Materials Science and Engineering, Changsha University of Science and Technology, Changsha 410114, China.
| | - Gang Ouyang
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China.
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9
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Tao ZG, Deng S, Prezhdo OV, Xiang H, Chu W, Gong XG. Tunable Ultrafast Charge Transfer across Homojunction Interface. J Am Chem Soc 2024; 146:24016-24023. [PMID: 39152917 DOI: 10.1021/jacs.4c07454] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/19/2024]
Abstract
Charge transfer at heterojunction interfaces is a fundamental process that plays a crucial role in modern electronic and photonic devices. The essence of such charge transfer lies in the band offset, making charge transfer uncommon in a homojunction. Recently, sliding ferroelectricity has been proposed and confirmed in two-dimensional van der Waals stacked materials such as bilayer boron nitride. During the sliding of these layers, the band alignment shifts, creating conditions for charge separation at the interface. We employ ab initio nonadiabatic molecular dynamics simulations to elucidate the excited state carrier dynamics in bilayer boron pnictides. We propose that, akin to ferroelectric polarization flipping, the precise modulation of the distribution of excited state carriers can also be reached by sliding. Our results demonstrate that sliding induces a reversal of the frontier orbital distribution on the upper and lower layers, facilitating a robust interlayer carrier transfer. Notably, the interlayer carrier transfer is more pronounced in boron phosphide than in boron nitride, attributed to strong electron scattering in momentum space in boron nitride. We propose this novel method to manipulate carrier distribution and dynamics in a homojunction exhibiting sliding ferroelectricity, in general, paving a new way for developing advanced electronic and photonic devices.
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Affiliation(s)
- Zhi-Guo Tao
- Key Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physics, Institute of Computational Physical Sciences and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qizhi Institution, Shanghai 200232, China
| | - Shihan Deng
- Key Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physics, Institute of Computational Physical Sciences and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qizhi Institution, Shanghai 200232, China
| | - Oleg V Prezhdo
- Department of Chemistry, University of Southern California, Los Angeles, California 90089, United States
- Department of Physics & Astronomy, University of Southern California, Los Angeles, California 90089, United States
| | - Hongjun Xiang
- Key Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physics, Institute of Computational Physical Sciences and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qizhi Institution, Shanghai 200232, China
| | - Weibin Chu
- Key Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physics, Institute of Computational Physical Sciences and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qizhi Institution, Shanghai 200232, China
| | - Xin-Gao Gong
- Key Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physics, Institute of Computational Physical Sciences and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qizhi Institution, Shanghai 200232, China
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10
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McHugh JG, Li X, Soltero I, Fal'ko VI. Two-dimensional electrons at mirror and twistronic twin boundaries in van der Waals ferroelectrics. Nat Commun 2024; 15:6838. [PMID: 39122695 PMCID: PMC11316064 DOI: 10.1038/s41467-024-51176-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/22/2024] [Accepted: 07/31/2024] [Indexed: 08/12/2024] Open
Abstract
Semiconducting transition metal dichalcogenides (MX2) occur in 2H and rhombohedral (3R) polytypes, respectively distinguished by anti-parallel and parallel orientation of consecutive monolayer lattices. In its bulk form, 3R-MX2 is ferroelectric, hosting an out-of-plane electric polarisation, the direction of which is dictated by stacking. Here, we predict that twin boundaries, separating adjacent polarisation domains with reversed built-in electric fields, are able to host two-dimensional electrons and holes with an areal density reaching ~ 1013cm-2. Our modelling suggests that n-doped twin boundaries have a more promising binding energy than p-doped ones, whereas hole accumulation is stable at external surfaces of a twinned film. We also propose that assembling pairs of mono-twin films with a 'magic' twist angle θ* that provides commensurability between the moiré pattern at the interface and the accumulated carrier density, should promote a regime of strongly correlated states of electrons, such as Wigner crystals, and we specify the values of θ* for homo- and heterostructures of various TMDs.
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Affiliation(s)
- James G McHugh
- Department of Physics and Astronomy, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, University of Manchester, Booth St. E., Manchester, M13 9PL, UK
| | - Xue Li
- Department of Physics and Astronomy, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, University of Manchester, Booth St. E., Manchester, M13 9PL, UK
| | - Isaac Soltero
- Department of Physics and Astronomy, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- National Graphene Institute, University of Manchester, Booth St. E., Manchester, M13 9PL, UK
| | - Vladimir I Fal'ko
- Department of Physics and Astronomy, University of Manchester, Oxford Road, Manchester, M13 9PL, UK.
- National Graphene Institute, University of Manchester, Booth St. E., Manchester, M13 9PL, UK.
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11
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Zhong T, Zhang H, Wu M. Single Molecular Semi-Sliding Ferroelectricity/Multiferroicity. RESEARCH (WASHINGTON, D.C.) 2024; 7:0428. [PMID: 39105050 PMCID: PMC11298321 DOI: 10.34133/research.0428] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/20/2024] [Accepted: 06/25/2024] [Indexed: 08/07/2024]
Abstract
In recent years, the unique mechanism of sliding ferroelectricity with ultralow switching barriers has been experimentally verified in a series of 2-dimensional (2D) materials. However, its practical applications are hindered by the low polarizations, the challenges in synthesis of ferroelectric phases limited in specific stacking configurations, and the low density for data storage since the switching process involves large-area simultaneous sliding of a whole layer. Herein, through first-principles calculations, we propose a type of semi-sliding ferroelectricity in the single metal porphyrin molecule intercalated in 2D bilayers. An enhanced vertical polarization can be formed independent on stacking configurations and switched via sliding of the molecule accompanied by the vertical displacements of its metal ion anchored from the upper layer to the lower layer. Such semi-sliding ferroelectricity enables each molecule to store 1 bit data independently, and the density for data storage can be greatly enhanced. When the bilayer exhibits intralayer ferromagnetism and interlayer antiferromagnetic coupling, a considerable difference in Curie temperature between 2 layers and a switchable net magnetization can be formed due to the vertical polarization. At a certain range of temperature, the exchange of paramagnetic-ferromagnetic phases between 2 layers is accompanied by ferroelectric switching, leading to a hitherto unreported type of multiferroic coupling that is long-sought for efficient "magnetic reading + electric writing".
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Affiliation(s)
- Tingting Zhong
- Department of Physics, Zhejiang Sci-Tech University, Hangzhou, Zhejiang 310018, China
| | - Hong Zhang
- Department of Physics, Zhejiang Sci-Tech University, Hangzhou, Zhejiang 310018, China
| | - Menghao Wu
- School of Physics,
Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
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12
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Du S, Yang W, Gao H, Dong W, Xu B, Watanabe K, Taniguchi T, Zhao J, Zheng F, Zhou J, Zheng S. Sliding Memristor in Parallel-Stacked Hexagonal Boron Nitride. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2404177. [PMID: 38973224 DOI: 10.1002/adma.202404177] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2024] [Revised: 06/04/2024] [Indexed: 07/09/2024]
Abstract
Sliding ferroelectricity in 2D materials, arising from interlayer sliding-induced interlayer hybridization and charge redistribution at the van der Waals interface, offers a means to manipulate spontaneous polarization at the atomic scale through various methods such as stacking order, interfacial contact, and electric field. However, the practical application of extending 2D sliding ferroelectricity remains challenging due to the contentious mechanisms and the complex device structures required for ferroelectric switching. Here, a sliding memristor based on a graphene/parallel-stacked hexagonal boron nitride/graphene tunneling device, featuring a stable memristive hysteresis induced by interfacial polarizations and barrier height modulations, is presented. As the tunneling current density increases, the memristive window broadens, achieving an on/off ratio of ≈103 and 2 order decrease of the trigger current density, attributed to the interlayer migration of positively charged boron ions and the formation of conductive filaments, as supported by the theoretical calculations. The findings open a path for exploring the sliding memristor via a tunneling device and bridge the gap between sliding ferroelectricity and memory applications.
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Affiliation(s)
- Shuang Du
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Wenqi Yang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Huiying Gao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Weikang Dong
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Boyu Xu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 303-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 303-0044, Japan
| | - Jing Zhao
- School of Mechatronical Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Fawei Zheng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Jiadong Zhou
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Shoujun Zheng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
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13
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Liu W, Du Z, Duan Z, Li L, Shen G. Neuroprosthetic contact lens enabled sensorimotor system for point-of-care monitoring and feedback of intraocular pressure. Nat Commun 2024; 15:5635. [PMID: 38965218 PMCID: PMC11224243 DOI: 10.1038/s41467-024-49907-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/07/2024] [Accepted: 06/24/2024] [Indexed: 07/06/2024] Open
Abstract
The wearable contact lens that continuously monitors intraocular pressure (IOP) facilitates prompt and early-state medical treatments of oculopathies such as glaucoma, postoperative myopia, etc. However, either taking drugs for pre-treatment or delaying the treatment process in the absence of a neural feedback component cannot realize accurate diagnosis or effective treatment. Herein, a neuroprosthetic contact lens enabled sensorimotor system is reported, which consists of a smart contact lens with Ti3C2Tx Wheatstone bridge structured IOP strain sensor, a Ti3C2Tx temperature sensor and an IOP point-of-care monitoring/display system. The point-of-care IOP monitoring and warning can be realized due to the high sensitivity of 12.52 mV mmHg-1 of the neuroprosthetic contact lens. In vivo experiments on rabbit eyes demonstrate the excellent wearability and biocompatibility of the neuroprosthetic contact lens. Further experiments on a living rate in vitro successfully mimic the biological sensorimotor loop. The leg twitching (larger or smaller angles) of the living rat was demonstrated under the command of motor cortex controlled by somatosensory cortex when the IOP is away from the normal range (higher or lower).
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Affiliation(s)
- Weijia Liu
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, 100081, Beijing, China
| | - Zhijian Du
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, 100081, Beijing, China
| | - Zhongyi Duan
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, 100081, Beijing, China
| | - La Li
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, 100081, Beijing, China.
| | - Guozhen Shen
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, 100081, Beijing, China.
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14
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Bian R, He R, Pan E, Li Z, Cao G, Meng P, Chen J, Liu Q, Zhong Z, Li W, Liu F. Developing fatigue-resistant ferroelectrics using interlayer sliding switching. Science 2024; 385:57-62. [PMID: 38843352 DOI: 10.1126/science.ado1744] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/19/2024] [Accepted: 05/24/2024] [Indexed: 07/06/2024]
Abstract
Ferroelectric materials have switchable electrical polarization that is appealing for high-density nonvolatile memories. However, inevitable fatigue hinders practical applications of these materials. Fatigue-free ferroelectric switching could dramatically improve the endurance of such devices. We report a fatigue-free ferroelectric system based on the sliding ferroelectricity of bilayer 3R molybdenum disulfide (3R-MoS2). The memory performance of this ferroelectric device does not show the wake-up effect at low cycles or a substantial fatigue effect after 106 switching cycles under different pulse widths. The total stress time of the device under an electric field is up to 105 s, which is long relative to other devices. Our theoretical calculations reveal that the fatigue-free feature of sliding ferroelectricity is due to the immobile charge defects in sliding ferroelectricity.
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Affiliation(s)
- Renji Bian
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
| | - Ri He
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Er Pan
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Zefen Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Guiming Cao
- School of Information Science and Technology, Xi Chang University, Xi Chang 615013, China
- Key Laboratory of Liangshan Agriculture Digital Transformation of Sichuan Provincial Education Department, Xi Chang University, Xi Chang 615013, China
| | - Peng Meng
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Jiangang Chen
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Qing Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Zhicheng Zhong
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- Department of Physics, University of Science and Technology of China, Hefei 230026, China
- Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou 215123, China
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China
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15
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Hou C, Shen Y, Wang Q, Yoshikawa A, Kawazoe Y, Jena P. In-Plane Sliding Ferroelectricity Realized in Penta-PdSe 2/Penta-PtSe 2 van der Waals Heterostructure. ACS NANO 2024; 18:16923-16933. [PMID: 38905522 DOI: 10.1021/acsnano.4c02994] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/23/2024]
Abstract
Different from conventional 2D sliding ferroelectrics with polarization switchable in the out-of-plane via interlayer sliding, we show the existence of in-plane sliding ferroelectricity in a bilayer of a pentagon-based van der Waals heterostructure formed by vertically stacking an experimentally synthesized penta-PdSe2 sheet and a crystal lattice well-matched penta-PtSe2 sheet. From the 128 sliding patterns, four stable configurations are found that exhibit in-plane sliding ferroelectricity with an ultralow polarization switching barrier of 1.91 meV/atom and a high ferroelectric polarization of ±17.11 × 10-10 C m-1. Following the ferroelectric transition among the stable sliding configurations, significant changes in carrier mobility, electrical conductivity, and second harmonic generation are identified. In particular, the ferroelectric stacking configurations are found to possess a negative Poisson's ratio, facilitating the experimental characterization of the sliding ferroelectric effect. This study demonstrates that pentagonal sheets can be used to realize 2D in-plane sliding ferroelectrics going beyond the existing ones.
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Affiliation(s)
- Changsheng Hou
- School of Materials Science and Engineering, CAPT, Peking University, Beijing 100871, China
| | - Yiheng Shen
- Materials Genome Institute, Shanghai University, Shanghai 200444, China
| | - Qian Wang
- School of Materials Science and Engineering, CAPT, Peking University, Beijing 100871, China
| | - Akira Yoshikawa
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
| | - Yoshiyuki Kawazoe
- New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8577, Japan
- Department of Physics, Suranaree University of Technology, Nakhon Ratchasima 30000, Thailand
- Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu 603203, India
| | - Puru Jena
- Department of Physics, Institute for Sustainable Energy and Environment, Virginia Commonwealth University, Richmond, Virginia 23284, United States
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16
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Cao W, Deb S, Stern MV, Raab N, Urbakh M, Hod O, Kronik L, Shalom MB. Polarization Saturation in Multilayered Interfacial Ferroelectrics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400750. [PMID: 38662941 DOI: 10.1002/adma.202400750] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2024] [Revised: 04/10/2024] [Indexed: 05/04/2024]
Abstract
Van der Waals polytypes of broken inversion and mirror symmetries have been recently shown to exhibit switchable electric polarization even at the ultimate two-layer thin limit. Their out-of-plane polarization has been found to accumulate in a ladder-like fashion with each successive layer, offering 2D building blocks for the bottom-up construction of 3D ferroelectrics. Here, it is demonstrated experimentally that beyond a critical stack thickness, the accumulated polarization in rhombohedral polytypes of molybdenum disulfide saturates. The underlying saturation mechanism, deciphered via density functional theory and self-consistent Poisson-Schrödinger calculations, point to a purely electronic redistribution involving: 1. Polarization-induced bandgap closure that allows for cross-stack charge transfer and the emergence of free surface charge; 2. Reduction of the polarization saturation value, as well as the critical thickness at which it is obtained, by the presence of free carriers. The resilience of polar layered structures to atomic surface reconstruction, which is essentially unavoidable in polar 3D crystals, potentially allows for the design of new devices with mobile surface charges. The findings, which are of general nature, should be accounted for when designing switching and/or conductive devices based on ferroelectric layered materials.
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Affiliation(s)
- Wei Cao
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv, 6997801, Israel
| | - Swarup Deb
- School of Physics and Astronomy, Tel Aviv University, Tel Aviv, 6997801, Israel
| | - Maayan Vizner Stern
- School of Physics and Astronomy, Tel Aviv University, Tel Aviv, 6997801, Israel
| | - Noam Raab
- School of Physics and Astronomy, Tel Aviv University, Tel Aviv, 6997801, Israel
| | - Michael Urbakh
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv, 6997801, Israel
| | - Oded Hod
- Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv, 6997801, Israel
| | - Leeor Kronik
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovoth, 7610001, Israel
| | - Moshe Ben Shalom
- School of Physics and Astronomy, Tel Aviv University, Tel Aviv, 6997801, Israel
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17
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Wang E, Zeng H, Duan W, Huang H. Spontaneous Inversion Symmetry Breaking and Emergence of Berry Curvature and Orbital Magnetization in Topological ZrTe_{5} Films. PHYSICAL REVIEW LETTERS 2024; 132:266802. [PMID: 38996308 DOI: 10.1103/physrevlett.132.266802] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Revised: 04/04/2024] [Accepted: 05/21/2024] [Indexed: 07/14/2024]
Abstract
ZrTe_{5} has recently attracted much attention due to the observation of intriguing nonreciprocal transport responses which necessitate the lack of inversion symmetry (I). However, there has been debate on the exact I-asymmetric structure and the underlying I-breaking mechanism. Here, we report a spontaneous I breaking in ZrTe_{5} films, which initiates from interlayer sliding and is stabilized by subtle intralayer distortion. Moreover, we predict significant nonlinear anomalous Hall effect (NAHE) and kinetic magnetoelectric effect (KME), which are attributed to the emergence of Berry curvature and orbital magnetization in the absence of I symmetry. We also explicitly manifest the direct coupling between sliding ferroelectricity, NAHE, and KME based on a sliding-dependent k·p model. By studying the subsurface sliding in ZrTe_{5} multilayers, we speculate that surface nonlinear Hall current and magnetization would emerge on the natural cleavage surface. Our findings elucidate the sliding-induced I-broken mechanism in ZrTe_{5} films and open new avenues for tuning nonreciprocal transport properties in Van der Waals layered materials.
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Affiliation(s)
| | | | - Wenhui Duan
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Institute for Advanced Study, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
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18
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Zeng Z, Tian Z, Wang Y, Ge C, Strauß F, Braun K, Michel P, Huang L, Liu G, Li D, Scheele M, Chen M, Pan A, Wang X. Dual polarization-enabled ultrafast bulk photovoltaic response in van der Waals heterostructures. Nat Commun 2024; 15:5355. [PMID: 38918419 PMCID: PMC11199638 DOI: 10.1038/s41467-024-49760-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/29/2023] [Accepted: 06/19/2024] [Indexed: 06/27/2024] Open
Abstract
The bulk photovoltaic effect (BPVE) originating from spontaneous charge polarizations can reach high conversion efficiency exceeding the Shockley-Queisser limit. Emerging van der Waals (vdW) heterostructures provide the ideal platform for BPVE due to interfacial interactions naturally breaking the crystal symmetries of the individual constituents and thus inducing charge polarizations. Here, we show an approach to obtain ultrafast BPVE by taking advantage of dual interfacial polarizations in vdW heterostructures. While the in-plane polarization gives rise to the BPVE in the overlayer, the charge carrier transfer assisted by the out-of-plane polarization further accelerates the interlayer electronic transport and enhances the BPVE. We illustrate the concept in MoS2/black phosphorus heterostructures, where the experimentally observed intrinsic BPVE response time achieves 26 ps, orders of magnitude faster than that of conventional non-centrosymmetric materials. Moreover, the heterostructure device possesses an extrinsic response time of approximately 2.2 ns and a bulk photovoltaic coefficient of 0.6 V-1, which is among the highest values for vdW BPV devices reported so far. Our study thus points to an effective way of designing ultrafast BPVE for high-speed photodetection.
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Grants
- the National Key Research and Development Program of Ministry of Science and Technology (Nos. 2022YFA1204300), the National Natural Science Foundation of China (Nos. 52022029, 52302175, 52221001, U23A20570, 92263107, 62090035, 12174098), the Hunan Provincial Natural Science Foundation of China (Nos. 2023JJ40138, 2022JJ30142),
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Affiliation(s)
- Zhouxiaosong Zeng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
- Institute of Physical and Theoretical Chemistry and LISA, University of Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany
| | - Zhiqiang Tian
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China
| | - Yufan Wang
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Cuihuan Ge
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Fabian Strauß
- Institute of Physical and Theoretical Chemistry and LISA, University of Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany
| | - Kai Braun
- Institute of Physical and Theoretical Chemistry and LISA, University of Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany
| | - Patrick Michel
- Institute of Physical and Theoretical Chemistry and LISA, University of Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany
| | - Lanyu Huang
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Guixian Liu
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Marcus Scheele
- Institute of Physical and Theoretical Chemistry and LISA, University of Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany
| | - Mingxing Chen
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China.
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China.
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China.
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China.
| | - Xiao Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China.
- School of Physics and Electronics, Hunan University, Changsha, 410082, China.
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19
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Van Winkle M, Dowlatshahi N, Khaloo N, Iyer M, Craig IM, Dhall R, Taniguchi T, Watanabe K, Bediako DK. Engineering interfacial polarization switching in van der Waals multilayers. NATURE NANOTECHNOLOGY 2024; 19:751-757. [PMID: 38504024 DOI: 10.1038/s41565-024-01642-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2023] [Accepted: 02/29/2024] [Indexed: 03/21/2024]
Abstract
In conventional ferroelectric materials, polarization is an intrinsic property limited by bulk crystallographic structure and symmetry. Recently, it has been demonstrated that polar order can also be accessed using inherently non-polar van der Waals materials through layer-by-layer assembly into heterostructures, wherein interfacial interactions can generate spontaneous, switchable polarization. Here we show that deliberate interlayer rotations in multilayer van der Waals heterostructures modulate both the spatial ordering and switching dynamics of polar domains. The engendered tunability is unparalleled in conventional bulk ferroelectrics or polar bilayers. By means of operando transmission electron microscopy we show how alterations of the relative rotations of three WSe2 layers produce structural polytypes with distinct arrangements of polar domains with either a global or localized switching response. Furthermore, the presence of uniaxial strain generates structural anisotropy that yields a range of switching behaviours, coercivities and even tunable biased responses. We also provide evidence of mechanical coupling between the two interfaces of the trilayer, a key consideration for the control of switching dynamics in polar multilayer structures more broadly.
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Affiliation(s)
- Madeline Van Winkle
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA
| | - Nikita Dowlatshahi
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA
| | - Nikta Khaloo
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA
| | - Mrinalni Iyer
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA
- Department of Chemistry, University of Minnesota, Minneapolis, MN, USA
| | - Isaac M Craig
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA
| | - Rohan Dhall
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan
| | - D Kwabena Bediako
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA.
- Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
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20
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Sui F, Li H, Qi R, Jin M, Lv Z, Wu M, Liu X, Zheng Y, Liu B, Ge R, Wu YN, Huang R, Yue F, Chu J, Duan C. Atomic-level polarization reversal in sliding ferroelectric semiconductors. Nat Commun 2024; 15:3799. [PMID: 38714769 PMCID: PMC11076638 DOI: 10.1038/s41467-024-48218-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/10/2024] [Accepted: 04/24/2024] [Indexed: 05/10/2024] Open
Abstract
Intriguing "slidetronics" has been reported in van der Waals (vdW) layered non-centrosymmetric materials and newly-emerging artificially-tuned twisted moiré superlattices, but correlative experiments that spatially track the interlayer sliding dynamics at atomic-level remain elusive. Here, we address the decisive challenge to in-situ trace the atomic-level interlayer sliding and the induced polarization reversal in vdW-layered yttrium-doped γ-InSe, step by step and atom by atom. We directly observe the real-time interlayer sliding by a 1/3-unit cell along the armchair direction, corresponding to vertical polarization reversal. The sliding driven only by low energetic electron-beam illumination suggests rather low switching barriers. Additionally, we propose a new sliding mechanism that supports the observed reversal pathway, i.e., two bilayer units slide towards each other simultaneously. Our insights into the polarization reversal via the atomic-scale interlayer sliding provide a momentous initial progress for the ongoing and future research on sliding ferroelectrics towards non-volatile storages or ferroelectric field-effect transistors.
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Affiliation(s)
- Fengrui Sui
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China
| | - Haoyang Li
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China
| | - Ruijuan Qi
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
| | - Min Jin
- College of Materials, Shanghai Dianji University, Shanghai, 201306, China.
| | - Zhiwei Lv
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China
| | - Menghao Wu
- School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Xuechao Liu
- Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Yufan Zheng
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China
| | - Beituo Liu
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China
| | - Rui Ge
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China
| | - Yu-Ning Wu
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.
| | - Rong Huang
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China
| | - Fangyu Yue
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China.
- Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai, 200062, China.
| | - Junhao Chu
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China
- National Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Shanghai, 200083, China
| | - Chungang Duan
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China
- Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai, 200062, China
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21
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Li S, Wang F, Wang Y, Yang J, Wang X, Zhan X, He J, Wang Z. Van der Waals Ferroelectrics: Theories, Materials, and Device Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301472. [PMID: 37363893 DOI: 10.1002/adma.202301472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2023] [Revised: 06/19/2023] [Indexed: 06/28/2023]
Abstract
In recent years, an increasing number of 2D van der Waals (vdW) materials are theory-predicted or laboratory-validated to possess in-plane (IP) and/or out-of-plane (OOP) spontaneous ferroelectric polarization. Due to their dangling-bond-free surfaces, interlayer charge coupling, robust polarization, tunable energy band structures, and compatibility with silicon-based technologies, vdW ferroelectric materials exhibit great promise in ferroelectric memories, neuromorphic computing, nanogenerators, photovoltaic devices, spintronic devices, and so on. Here, the very recent advances in the field of vdW ferroelectrics (FEs) are reviewed. First, theories of ferroelectricity are briefly discussed. Then, a comprehensive summary of the non-stacking vdW ferroelectric materials is provided based on their crystal structures and the emerging sliding ferroelectrics. In addition, their potential applications in various branches/frontier fields are enumerated, with a focus on artificial intelligence. Finally, the challenges and development prospects of vdW ferroelectrics are discussed.
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Affiliation(s)
- Shuhui Li
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Feng Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yanrong Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jia Yang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xinyuan Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xueying Zhan
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jun He
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Zhenxing Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
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22
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Wang L, Qi J, Wei W, Wu M, Zhang Z, Li X, Sun H, Guo Q, Cao M, Wang Q, Zhao C, Sheng Y, Liu Z, Liu C, Wu M, Xu Z, Wang W, Hong H, Gao P, Wu M, Wang ZJ, Xu X, Wang E, Ding F, Zheng X, Liu K, Bai X. Bevel-edge epitaxy of ferroelectric rhombohedral boron nitride single crystal. Nature 2024; 629:74-79. [PMID: 38693415 DOI: 10.1038/s41586-024-07286-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Accepted: 03/08/2024] [Indexed: 05/03/2024]
Abstract
Within the family of two-dimensional dielectrics, rhombohedral boron nitride (rBN) is considerably promising owing to having not only the superior properties of hexagonal boron nitride1-4-including low permittivity and dissipation, strong electrical insulation, good chemical stability, high thermal conductivity and atomic flatness without dangling bonds-but also useful optical nonlinearity and interfacial ferroelectricity originating from the broken in-plane and out-of-plane centrosymmetry5-23. However, the preparation of large-sized single-crystal rBN layers remains a challenge24-26, owing to the requisite unprecedented growth controls to coordinate the lattice orientation of each layer and the sliding vector of every interface. Here we report a facile methodology using bevel-edge epitaxy to prepare centimetre-sized single-crystal rBN layers with exact interlayer ABC stacking on a vicinal nickel surface. We realized successful accurate fabrication over a single-crystal nickel substrate with bunched step edges of the terrace facet (100) at the bevel facet (110), which simultaneously guided the consistent boron-nitrogen bond orientation in each BN layer and the rhombohedral stacking of BN layers via nucleation near each bevel facet. The pure rhombohedral phase of the as-grown BN layers was verified, and consequently showed robust, homogeneous and switchable ferroelectricity with a high Curie temperature. Our work provides an effective route for accurate stacking-controlled growth of single-crystal two-dimensional layers and presents a foundation for applicable multifunctional devices based on stacked two-dimensional materials.
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Affiliation(s)
- Li Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing, China.
| | - Jiajie Qi
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Wenya Wei
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, China
| | - Mengqi Wu
- School of Engineering, Westlake University, Hangzhou, China
| | - Zhibin Zhang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Xiaomin Li
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Huacong Sun
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Quanlin Guo
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Meng Cao
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Qinghe Wang
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
| | - Chao Zhao
- Shenzhen Institute of Advanced Technology, Shenzhen, China
| | - Yuxuan Sheng
- School of Physics, Huazhong University of Science and Technology, Wuhan, China
| | - Zhetong Liu
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing, China
| | - Muhong Wu
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Centre for Light-Element Advanced Materials, Peking University, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Zhi Xu
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Wenlong Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Hao Hong
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Centre for Light-Element Advanced Materials, Peking University, Beijing, China
| | - Peng Gao
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, China
| | - Menghao Wu
- School of Physics, Huazhong University of Science and Technology, Wuhan, China
| | - Zhu-Jun Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
| | - Xiaozhi Xu
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, China
| | - Enge Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Centre for Light-Element Advanced Materials, Peking University, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
- Tsientang Institute for Advanced Study, Hangzhou, China
| | - Feng Ding
- Shenzhen Institute of Advanced Technology, Shenzhen, China.
| | - Xiaorui Zheng
- School of Engineering, Westlake University, Hangzhou, China.
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking University, Beijing, China.
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Centre for Light-Element Advanced Materials, Peking University, Beijing, China.
- Songshan Lake Materials Laboratory, Dongguan, China.
| | - Xuedong Bai
- Institute of Physics, Chinese Academy of Sciences, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China.
- Songshan Lake Materials Laboratory, Dongguan, China.
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23
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Li T, Wu Y, Yu G, Li S, Ren Y, Liu Y, Liu J, Feng H, Deng Y, Chen M, Zhang Z, Min T. Realization of sextuple polarization states and interstate switching in antiferroelectric CuInP 2S 6. Nat Commun 2024; 15:2653. [PMID: 38531845 DOI: 10.1038/s41467-024-46891-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/06/2023] [Accepted: 03/14/2024] [Indexed: 03/28/2024] Open
Abstract
Realization of higher-order multistates with mutual interstate switching in ferroelectric materials is a perpetual drive for high-density storage devices and beyond-Moore technologies. Here we demonstrate experimentally that antiferroelectric van der Waals CuInP2S6 films can be controllably stabilized into double, quadruple, and sextuple polarization states, and a system harboring polarization order of six is also reversibly tunable into order of four or two. Furthermore, for a given polarization order, mutual interstate switching can be achieved via moderate electric field modulation. First-principles studies of CuInP2S6 multilayers help to reveal that the double, quadruple, and sextuple states are attributable to the existence of respective single, double, and triple ferroelectric domains with antiferroelectric interdomain coupling and Cu ion migration. These findings offer appealing platforms for developing multistate ferroelectric devices, while the underlining mechanism is transformative to other non-volatile material systems.
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Affiliation(s)
- Tao Li
- Centre for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, 710049, Xi'an, China
| | - Yongyi Wu
- Centre for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, 710049, Xi'an, China
| | - Guoliang Yu
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Centre for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, 410081, Changsha, China
| | - Shengxian Li
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Centre for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, 410081, Changsha, China
| | - Yifeng Ren
- Solid State Microstructure National Key Lab and Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Yadong Liu
- Centre for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, 710049, Xi'an, China
| | - Jiarui Liu
- Centre for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, 710049, Xi'an, China
| | - Hao Feng
- Centre for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, 710049, Xi'an, China
| | - Yu Deng
- Solid State Microstructure National Key Lab and Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, 210093, Nanjing, China
| | - Mingxing Chen
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Centre for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, 410081, Changsha, China.
- State Key Laboratory of Powder Metallurgy, Central South University, 410083, Changsha, China.
| | - Zhenyu Zhang
- International Center for Quantum Design of Functional Materials (ICQD) and Hefei National Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China.
| | - Tai Min
- Centre for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, 710049, Xi'an, China.
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24
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Chen X, Ding X, Gou G, Zeng XC. Strong Sliding Ferroelectricity and Interlayer Sliding Controllable Spintronic Effect in Two-Dimensional HgI 2 Layers. NANO LETTERS 2024; 24:3089-3096. [PMID: 38426455 DOI: 10.1021/acs.nanolett.3c04869] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/02/2024]
Abstract
Exploration of two-dimensional (2D) sliding ferroelectric (FE) materials with experimentally detectable ferroelectricity and value-added novel functionalities is highly sought for the development of 2D "slidetronics". Herein, based on first-principles calculations, we identify the synthesizable van der Waals (vdW) layered crystals HgX2 (X = Br and I) as a new class of 2D sliding ferroelectrics. Both HgBr2 and HgI2 in 2D multilayered forms adopt the preferential stacking sequence, leading to room temperature stable out-of-plane (vertical) ferroelectricity that can be reversed via the sliding of adjacent monolayers. Owing to strong interlayer coupling and interfacial charge rearrangement, 2D HgI2 layers possess strong sliding ferroelectricity up to 0.16 μC/cm2, readily detectable in experiment. Moreover, robust sliding ferroelectricity and interlayer sliding controllable Rashba spin texture of FE-HgI2 layers enable potential applications as 2D spintronic devices such that the electric control of electron spin detection can be realized at the 2D regime.
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Affiliation(s)
- Xinfeng Chen
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
| | - Xinkai Ding
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
- School of Energy Materials & Chemical Engineering, Hefei University, Hefei 230601, People's Republic of China
| | - Gaoyang Gou
- Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
| | - Xiao Cheng Zeng
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong 999077, People's Republic of China
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25
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Wang J, Cheng F, Sun Y, Xu H, Cao L. Stacking engineering in layered homostructures: transitioning from 2D to 3D architectures. Phys Chem Chem Phys 2024; 26:7988-8012. [PMID: 38380525 DOI: 10.1039/d3cp04656g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/22/2024]
Abstract
Artificial materials, characterized by their distinctive properties and customized functionalities, occupy a central role in a wide range of applications including electronics, spintronics, optoelectronics, catalysis, and energy storage. The emergence of atomically thin two-dimensional (2D) materials has driven the creation of artificial heterostructures, harnessing the potential of combining various 2D building blocks with complementary properties through the art of stacking engineering. The promising outcomes achieved for heterostructures have spurred an inquisitive exploration of homostructures, where identical 2D layers are precisely stacked. This perspective primarily focuses on the field of stacking engineering within layered homostructures, where precise control over translational or rotational degrees of freedom between vertically stacked planes or layers is paramount. In particular, we provide an overview of recent advancements in the stacking engineering applied to 2D homostructures. Additionally, we will shed light on research endeavors venturing into three-dimensional (3D) structures, which allow us to proactively address the limitations associated with artificial 2D homostructures. We anticipate that the breakthroughs in stacking engineering in 3D materials will provide valuable insights into the mechanisms governing stacking effects. Such advancements have the potential to unlock the full capability of artificial layered homostructures, propelling the future development of materials, physics, and device applications.
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Affiliation(s)
- Jiamin Wang
- Changchun Institute of Optics, Fine Mechanics & Physics (CIOMP), Chinese Academy of Sciences, Changchun 130033, P. R. China.
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Fang Cheng
- State Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, P. R. China
| | - Yan Sun
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China.
| | - Hai Xu
- Changchun Institute of Optics, Fine Mechanics & Physics (CIOMP), Chinese Academy of Sciences, Changchun 130033, P. R. China.
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Liang Cao
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, P. R. China.
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26
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Fox C, Mao Y, Zhang X, Wang Y, Xiao J. Stacking Order Engineering of Two-Dimensional Materials and Device Applications. Chem Rev 2024; 124:1862-1898. [PMID: 38150266 DOI: 10.1021/acs.chemrev.3c00618] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Stacking orders in 2D van der Waals (vdW) materials dictate the relative sliding (lateral displacement) and twisting (rotation) between atomically thin layers. By altering the stacking order, many new ferroic, strongly correlated and topological orderings emerge with exotic electrical, optical and magnetic properties. Thanks to the weak vdW interlayer bonding, such highly flexible and energy-efficient stacking order engineering has transformed the design of quantum properties in 2D vdW materials, unleashing the potential for miniaturized high-performance device applications in electronics, spintronics, photonics, and surface chemistry. This Review provides a comprehensive overview of stacking order engineering in 2D vdW materials and their device applications, ranging from the typical fabrication and characterization methods to the novel physical properties and the emergent slidetronics and twistronics device prototyping. The main emphasis is on the critical role of stacking orders affecting the interlayer charge transfer, orbital coupling and flat band formation for the design of innovative materials with on-demand quantum properties and surface potentials. By demonstrating a correlation between the stacking configurations and device functionality, we highlight their implications for next-generation electronic, photonic and chemical energy conversion devices. We conclude with our perspective of this exciting field including challenges and opportunities for future stacking order engineering research.
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Affiliation(s)
- Carter Fox
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Yulu Mao
- Department of Electrical and Computer Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Xiang Zhang
- Faculty of Science, University of Hong Kong, Hong Kong, China
- Faculty of Engineering, University of Hong Kong, Hong Kong, China
| | - Ying Wang
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Electrical and Computer Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Jun Xiao
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
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27
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Song L, Zhao Y, Du R, Li H, Li X, Feng W, Yang J, Wen X, Huang L, Peng Y, Sun H, Jiang Y, He J, Shi J. Coexistence of Ferroelectricity and Ferromagnetism in Atomically Thin Two-Dimensional Cr 2S 3/WS 2 Vertical Heterostructures. NANO LETTERS 2024; 24:2408-2414. [PMID: 38329291 DOI: 10.1021/acs.nanolett.3c05105] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2024]
Abstract
Two-dimensional (2D) heterostructures with ferromagnetism and ferroelectricity provide a promising avenue to miniaturize the device size, increase computational power, and reduce energy consumption. However, the direct synthesis of such eye-catching heterostructures has yet to be realized up to now. Here, we design a two-step chemical vapor deposition strategy to growth of Cr2S3/WS2 vertical heterostructures with atomically sharp and clean interfaces on sapphire. The interlayer charge transfer and periodic moiré superlattice result in the emergence of room-temperature ferroelectricity in atomically thin Cr2S3/WS2 vertical heterostructures. In parallel, long-range ferromagnetic order is discovered in 2D Cr2S3 via the magneto-optical Kerr effect technique with the Curie temperature approaching 170 K. The charge distribution variation induced by the moiré superlattice changes the ferromagnetic coupling strength and enhances the Curie temperature. The coexistence of ferroelectricity and ferromagnetism in 2D Cr2S3/WS2 vertical heterostructures provides a cornerstone for the further design of logic-in-memory devices to build new computing architectures.
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Affiliation(s)
- Luying Song
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ying Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian 116024, People's Republic of China
| | - Ruofan Du
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Hui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Xiaohui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Wang Feng
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Junbo Yang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Xia Wen
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ling Huang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yanan Peng
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Hang Sun
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yulin Jiang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
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28
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Yang D, Liang J, Wu J, Xiao Y, Dadap JI, Watanabe K, Taniguchi T, Ye Z. Non-volatile electrical polarization switching via domain wall release in 3R-MoS 2 bilayer. Nat Commun 2024; 15:1389. [PMID: 38360848 PMCID: PMC10869714 DOI: 10.1038/s41467-024-45709-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/26/2023] [Accepted: 02/02/2024] [Indexed: 02/17/2024] Open
Abstract
Understanding the nature of sliding ferroelectricity is of fundamental importance for the discovery and application of two-dimensional ferroelectric materials. In this work, we investigate the phenomenon of switchable polarization in a bilayer MoS2 with natural rhombohedral stacking, where the spontaneous polarization is coupled with excitonic effects through asymmetric interlayer coupling. Using optical spectroscopy and imaging techniques, we observe how a released domain wall switches the polarization of a large single domain. Our results highlight the importance of domain walls in the polarization switching of non-twisted rhombohedral transition metal dichalcogenides and open new opportunities for the non-volatile control of their optical response.
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Affiliation(s)
- Dongyang Yang
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada
| | - Jing Liang
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada
| | - Jingda Wu
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada
| | - Yunhuan Xiao
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada
| | - Jerry I Dadap
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Ziliang Ye
- Department of Physics and Astronomy, The University of British Columbia, Vancouver, BC, Canada.
- Quantum Matter Institute, The University of British Columbia, Vancouver, BC, Canada.
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29
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Pei C, Zhang J, Li H. Probing Polymorphic Stacking Domains in Mechanically Exfoliated Two-Dimensional Nanosheets Using Atomic Force Microscopy and Ultralow-Frequency Raman Spectroscopy. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:339. [PMID: 38392712 PMCID: PMC10892501 DOI: 10.3390/nano14040339] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/26/2023] [Revised: 01/26/2024] [Accepted: 02/07/2024] [Indexed: 02/24/2024]
Abstract
As one of the key features of two-dimensional (2D) layered materials, stacking order has been found to play an important role in modulating the interlayer interactions of 2D materials, potentially affecting their electronic and other properties as a consequence. In this work, ultralow-frequency (ULF) Raman spectroscopy, electrostatic force microscopy (EFM), and high-resolution atomic force microscopy (HR-AFM) were used to systematically study the effect of stacking order on the interlayer interactions as well as electrostatic screening of few-layer polymorphic molybdenum disulfide (MoS2) and molybdenum diselenide (MoSe2) nanosheets. The stacking order difference was first confirmed by measuring the ULF Raman spectrum of the nanosheets with polymorphic stacking domains. The atomic lattice arrangement revealed using HR-AFM also clearly showed a stacking order difference. In addition, EFM phase imaging clearly presented the distribution of the stacking domains in the mechanically exfoliated nanosheets, which could have arisen from electrostatic screening. The results indicate that EFM in combination with ULF Raman spectroscopy could be a simple, fast, and high-resolution method for probing the distribution of polymorphic stacking domains in 2D transition metal dichalcogenide materials. Our work might be promising for correlating the interlayer interactions of TMDC nanosheets with stacking order, a topic of great interest with regard to modulating their optoelectronic properties.
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Affiliation(s)
| | | | - Hai Li
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China
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30
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Song L, Zhao Y, Xu B, Du R, Li H, Feng W, Yang J, Li X, Liu Z, Wen X, Peng Y, Wang Y, Sun H, Huang L, Jiang Y, Cai Y, Jiang X, Shi J, He J. Robust multiferroic in interfacial modulation synthesized wafer-scale one-unit-cell of chromium sulfide. Nat Commun 2024; 15:721. [PMID: 38267426 PMCID: PMC10808545 DOI: 10.1038/s41467-024-44929-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/26/2023] [Accepted: 01/11/2024] [Indexed: 01/26/2024] Open
Abstract
Multiferroic materials offer a promising avenue for manipulating digital information by leveraging the cross-coupling between ferroelectric and ferromagnetic orders. Despite the ferroelectricity has been uncovered by ion displacement or interlayer-sliding, one-unit-cell of multiferroic materials design and wafer-scale synthesis have yet to be realized. Here we develope an interface modulated strategy to grow 1-inch one-unit-cell of non-layered chromium sulfide with unidirectional orientation on industry-compatible c-plane sapphire. The interfacial interaction between chromium sulfide and substrate induces the intralayer-sliding of self-intercalated chromium atoms and breaks the space reversal symmetry. As a result, robust room-temperature ferroelectricity (retaining more than one month) emerges in one-unit-cell of chromium sulfide with ultrahigh remanent polarization. Besides, long-range ferromagnetic order is discovered with the Curie temperature approaching 200 K, almost two times higher than that of bulk counterpart. In parallel, the magnetoelectric coupling is certified and which makes 1-inch one-unit-cell of chromium sulfide the largest and thinnest multiferroics.
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Affiliation(s)
- Luying Song
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Ying Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian, 116024, China
| | - Bingqian Xu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ruofan Du
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Hui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Wang Feng
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Junbo Yang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Xiaohui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Zijia Liu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Xia Wen
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Yanan Peng
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Yuzhu Wang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Hang Sun
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Ling Huang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Yulin Jiang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China
| | - Yao Cai
- The Institute of Technological Sciences, Wuhan University, 430072, Wuhan, China
| | - Xue Jiang
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology, Dalian, 116024, China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, China.
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, China.
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Liu Q, Cui S, Bian R, Pan E, Cao G, Li W, Liu F. The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications. ACS NANO 2024; 18:1778-1819. [PMID: 38179983 DOI: 10.1021/acsnano.3c05711] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
In recent years, there has been growing interest in functional devices based on two-dimensional (2D) materials, which possess exotic physical properties. With an ultrathin thickness, the optoelectrical and electrical properties of 2D materials can be effectively tuned by an external field, which has stimulated considerable scientific activities. Ferroelectric fields with a nonvolatile and electrically switchable feature have exhibited enormous potential in controlling the electronic and optoelectronic properties of 2D materials, leading to an extremely fertile area of research. Here, we review the 2D materials and relevant devices integrated with ferroelectricity. This review starts to introduce the background about the concerned themes, namely 2D materials and ferroelectrics, and then presents the fundamental mechanisms, tuning strategies, as well as recent progress of the ferroelectric effect on the optical and electrical properties of 2D materials. Subsequently, the latest developments of 2D material-based electronic and optoelectronic devices integrated with ferroelectricity are summarized. Finally, the future outlook and challenges of this exciting field are suggested.
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Affiliation(s)
- Qing Liu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Silin Cui
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Renji Bian
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Er Pan
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Guiming Cao
- School of Information Science and Technology, Xi Chang University, 615013 Xi'an, China
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Fucai Liu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
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Lv M, Wang J, Tian M, Wan N, Tong W, Duan C, Xue J. Multiresistance states in ferro- and antiferroelectric trilayer boron nitride. Nat Commun 2024; 15:295. [PMID: 38177167 PMCID: PMC10766609 DOI: 10.1038/s41467-023-44617-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Accepted: 12/22/2023] [Indexed: 01/06/2024] Open
Abstract
Stacking two atomic layers together can induce interlayer (sliding) ferroelectricity that is absent in their naturally occurring crystal forms. With the flexibility of two-dimensional materials, more layers could be assembled to give rise to even richer polarization states. Here, we show that three-layer boron nitride can host ferro- and antiferroelectric domains in the same sample. When used as a tunneling junction, the polarization of these domains could be switched in a layer-by-layer procedure, producing multiple resistance states. Theoretical investigation reveals an important role played by the interaction between the trilayer boron nitride and graphene substrate. These findings reveal the great potential and unique properties of 2D sliding ferroelectric materials.
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Affiliation(s)
- Ming Lv
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
| | - Jiulong Wang
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, China
| | - Ming Tian
- Key Laboratory of MEMS of Ministry of Education, School of Integrated Circuits, Southeast University, Nanjing, China
| | - Neng Wan
- Key Laboratory of MEMS of Ministry of Education, School of Integrated Circuits, Southeast University, Nanjing, China.
| | - Wenyi Tong
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, China.
| | - Chungang Duan
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, China
| | - Jiamin Xue
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, China.
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33
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Sun W, Wang W, Hu R, Yang C, Huang S, Li X, Cheng Z. Ultra-High-Density Ferroelectric Array Formed by Sliding Ferroelectric Moiré Superlattices. NANO LETTERS 2023. [PMID: 38047724 DOI: 10.1021/acs.nanolett.3c03822] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/05/2023]
Abstract
2D van der Waals (vdW) materials offer infinite possibilities for constructing unique ferroelectrics through simple layer stacking and rotation. In this work, we stack nonferroelectric GeS2 and ferroelectric CuInP2S6 to form heterostructures by combining sliding ferroelectric polarization with displacement ferroelectric polarization to achieve multiple polarization states. First-principles calculations reveal that the polarization reversal of the CuInP2S6 component in the GeS2/CuInP2S6/GeS2 heterostructure can simultaneously drive the switching of sliding ferroelectric polarization, displaying a robust coupling of the two polarizations and leading to the overall polarization switching. Based on this, ferroelectric arrays with a density of 6.55 × 1012 cm-2 (equivalent to a storage density of 0.7 TB cm-2) were constructed in a moiré superlattice, and the polarization strength of array elements was 11.77 pC/m, higher than that of all reported 2D vdW out-of-plane ferroelectrics. High density, large polarization, and electrically switchable array elements in ferroelectric arrays provide unprecedented opportunities to design 2D high-density nonvolatile ferroelectric memories.
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Affiliation(s)
- Wei Sun
- Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022, China
| | - Wenxuan Wang
- School of Material Science and Engineering, University of Jinan, Jinan 250022, Shandong China
| | - Riming Hu
- Institute for Smart Materials & Engineering, School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
| | - Changhong Yang
- Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022, China
| | - Shifeng Huang
- Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials, University of Jinan, Jinan 250022, China
| | - Xiaoning Li
- Institute for Superconducting & Electronic Materials, Australian Institute of Innovative Materials, University of Wollongong, Innovation Campus, Squires Way, North Wollongong, New South Wales 2500, Australia
| | - Zhenxiang Cheng
- Institute for Superconducting & Electronic Materials, Australian Institute of Innovative Materials, University of Wollongong, Innovation Campus, Squires Way, North Wollongong, New South Wales 2500, Australia
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34
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Chen H, Wang Q, Feng X, Wu W, Zhang L. Phonon Chirality Manipulation Mechanism in Transition-Metal Dichalcogenide Interlayer-Sliding Ferroelectrics. NANO LETTERS 2023. [PMID: 37976102 DOI: 10.1021/acs.nanolett.3c03787] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/19/2023]
Abstract
As an ideal platform, both the theoretical prediction and first experimental verification of chiral phonons are based on transition-metal dichalcogenide materials. The manipulation of phonon chirality in these materials will have a profound effect on the study of chiral phonons. In this work, we utilize the sliding ferroelectric effect to realize the phonon chirality manipulation mechanism in transition-metal dichalcogenide materials. Based on first-principles calculations, we find the different manipulation effects of interlayer sliding on the phonon chirality and Berry curvature in bilayer and four-layer MoS2 sliding ferroelectrics. These further affect the phonon angular momentum and magnetization under a temperature gradient and the phonon Hall effect under a magnetic field. Our work connects two emerging fields and opens up a new route to manipulating phonon chirality in transition-metal dichalcogenide materials through the sliding ferroelectric mechanism.
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Affiliation(s)
- Hao Chen
- Department of Physics, University of Science and Technology of China, Hefei 230026, China
- Phonon Engineering Research Center of Jiangsu Province, Center for Quantum Transport and Thermal Energy Science, Institute of Physics Frontiers and Interdisciplinary Sciences, School of Physics and Technology, Nanjing Normal University, Nanjing 210023, China
| | - Qianqian Wang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
| | - Xukun Feng
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
| | - Weikang Wu
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education, Shandong University, Jinan 250061, China
| | - Lifa Zhang
- Phonon Engineering Research Center of Jiangsu Province, Center for Quantum Transport and Thermal Energy Science, Institute of Physics Frontiers and Interdisciplinary Sciences, School of Physics and Technology, Nanjing Normal University, Nanjing 210023, China
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35
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Niu Y, Li L, Qi Z, Aung HH, Han X, Tenne R, Yao Y, Zak A, Guo Y. 0D van der Waals interfacial ferroelectricity. Nat Commun 2023; 14:5578. [PMID: 37907466 PMCID: PMC10618478 DOI: 10.1038/s41467-023-41045-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/26/2023] [Accepted: 08/21/2023] [Indexed: 11/02/2023] Open
Abstract
The dimensional limit of ferroelectricity has been long explored. The critical contravention is that the downscaling of ferroelectricity leads to a loss of polarization. This work demonstrates a zero-dimensional ferroelectricity by the atomic sliding at the restrained van der Waals interface of crossed tungsten disufilde nanotubes. The developed zero-dimensional ferroelectric diode in this work presents not only non-volatile resistive memory, but also the programmable photovoltaic effect at the visible band. Benefiting from the intrinsic dimensional limitation, the zero-dimensional ferroelectric diode allows electrical operation at an ultra-low current. By breaking through the critical size of depolarization, this work demonstrates the ultimately downscaled interfacial ferroelectricity of zero-dimensional, and contributes to a branch of devices that integrates zero-dimensional ferroelectric memory, nano electro-mechanical system, and programmable photovoltaics in one.
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Affiliation(s)
- Yue Niu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Lei Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Zhiying Qi
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Hein Htet Aung
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Xinyi Han
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Reshef Tenne
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, 7610001, Rehovot, Israel
| | - Yugui Yao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Alla Zak
- Faculty of Sciences, Holon Institute of Technology, 52 Golomb Street, 5810201, Holon, Israel
| | - Yao Guo
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China.
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China.
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Cao A, Li S, Chen H, Deng M, Xu X, Shang L, Li Y, Cui A, Hu Z. A polar-switchable and controllable negative phototransistor for information encryption. MATERIALS HORIZONS 2023; 10:5099-5109. [PMID: 37691576 DOI: 10.1039/d3mh01120h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/12/2023]
Abstract
Anomalous negative phototransistors have emerged as a distinct research area, characterized by a decrease in channel current under light illumination. Recently, their potential applications have been expanded beyond photodetection. Despite the considerable attention given to negative phototransistors, negative photoconductance (NPC) in particular remains relatively unexplored, with limited research advancements as compared to well-established positive phototransistors. In this study, we designed ferroelectric field-effect transistors (FeFETs) based on the WSe2/CIPS van der Waals (vdW) vertical heterostructures with a buried-gated architecture. The transistor exhibits NPC and positive photoconductance (PPC), demonstrating the significant role of ferroelectric polarization in the distinctive photoresponse. The observed inverse photoconductance can be attributed to the dynamic switching of ferroelectric polarization and interfacial charge transfer processes, which have been investigated experimentally and theoretically using Density Functional Theory (DFT). The unique phenomena enable the coexistence of controllable and polarity-switchable PPC and NPC. The novel feature holds tremendous potential for applications in optical encryption, where the specific gate voltages and light can serve as universal keys to achieve modulation of conductivity. The ability to manipulate conductivity in response to optical stimuli opens up new avenues for developing secure communication systems and data storage technologies. Harnessing this feature enables the design of advanced encryption schemes that rely on the unique properties of our material system. The study not only advances the development of NPC but also paves the way for more robust and efficient methods of optical encryption, ensuring the confidentiality and integrity of critical information in various domains, including data transmission, and information security.
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Affiliation(s)
- Aiping Cao
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Shubing Li
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Hongli Chen
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Menghan Deng
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Xionghu Xu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Liyan Shang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Yawei Li
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Anyang Cui
- Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai 200234, China
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
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37
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Yang J, Wu B, Zhou J, Lu J, Yang J, Shen L. Full electrical control of multiple resistance states in van der Waals sliding multiferroic tunnel junctions. NANOSCALE 2023; 15:16103-16111. [PMID: 37751287 DOI: 10.1039/d3nr03951j] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/27/2023]
Abstract
The recent development of two-dimensional magnetic and sliding-ferroelectric van der Waals (vdW) materials opens a new way to realize vdW sliding multiferroic tunnel junctions (MFTJs) for low-power nonvolatile memory applications. Here, we propose and investigate full electrical control of four nonvolatile resistance states in sliding MFTJs, Au/CrI3/bilayer h-BN/CrI3-MnBi2Te4/Au, via first principles. We found four stable states associated with different polarization orientations in bilayer h-BN and magnetization alignment in two CrI3 magnetic layers, which can be controlled purely by electrical voltage and current, respectively. The MFTJ has a giant tunneling magnetoresistance (TMR) of ∼10 000% (2000% in the presence of SOC) and a sizeable tunneling electroresistance (TER) of ∼70%. The write performance is explored by spin-transfer-torque calculations which show an impressive low critical current (∼1.5 × 1010 A m-2) to switch the magnetization of the free layer of CrI3, while antiferromagnetic MnBi2Te4 pins the reference layer with a large interfacial exchange coupling.
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Affiliation(s)
- Jie Yang
- Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450001, P. R. China
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, P. R. China.
| | - Baochun Wu
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, P. R. China.
| | - Jun Zhou
- Institute of Materials Research & Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, Singapore 138634, Singapore
| | - Jing Lu
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, P. R. China.
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Peking University, Beijing 100871, P. R. China
- Yangtze Delta Institute of Optoelectronics, Peking University, Nantong 226010, Jiangsu, P. R. China
| | - Jinbo Yang
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, P. R. China.
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Peking University, Beijing 100871, P. R. China
- Yangtze Delta Institute of Optoelectronics, Peking University, Nantong 226010, Jiangsu, P. R. China
| | - Lei Shen
- Department of Mechanical Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore.
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38
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Zhang S, Liu Y, Sun Z, Chen X, Li B, Moore SL, Liu S, Wang Z, Rossi SE, Jing R, Fonseca J, Yang B, Shao Y, Huang CY, Handa T, Xiong L, Fu M, Pan TC, Halbertal D, Xu X, Zheng W, Schuck PJ, Pasupathy AN, Dean CR, Zhu X, Cobden DH, Xu X, Liu M, Fogler MM, Hone JC, Basov DN. Visualizing moiré ferroelectricity via plasmons and nano-photocurrent in graphene/twisted-WSe 2 structures. Nat Commun 2023; 14:6200. [PMID: 37794007 PMCID: PMC10550968 DOI: 10.1038/s41467-023-41773-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/12/2023] [Accepted: 09/15/2023] [Indexed: 10/06/2023] Open
Abstract
Ferroelectricity, a spontaneous and reversible electric polarization, is found in certain classes of van der Waals (vdW) materials. The discovery of ferroelectricity in twisted vdW layers provides new opportunities to engineer spatially dependent electric and optical properties associated with the configuration of moiré superlattice domains and the network of domain walls. Here, we employ near-field infrared nano-imaging and nano-photocurrent measurements to study ferroelectricity in minimally twisted WSe2. The ferroelectric domains are visualized through the imaging of the plasmonic response in a graphene monolayer adjacent to the moiré WSe2 bilayers. Specifically, we find that the ferroelectric polarization in moiré domains is imprinted on the plasmonic response of the graphene. Complementary nano-photocurrent measurements demonstrate that the optoelectronic properties of graphene are also modulated by the proximal ferroelectric domains. Our approach represents an alternative strategy for studying moiré ferroelectricity at native length scales and opens promising prospects for (opto)electronic devices.
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Affiliation(s)
- Shuai Zhang
- Department of Physics, Columbia University, New York, NY, 10027, USA.
| | - Yang Liu
- Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA
| | - Zhiyuan Sun
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, P.R. China
| | - Xinzhong Chen
- Department of Physics, Columbia University, New York, NY, 10027, USA
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY, 11794, USA
| | - Baichang Li
- Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA
| | - S L Moore
- Department of Physics, Columbia University, New York, NY, 10027, USA
| | - Song Liu
- Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA
| | - Zhiying Wang
- Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA
| | - S E Rossi
- Department of Physics, Columbia University, New York, NY, 10027, USA
| | - Ran Jing
- Department of Physics, Columbia University, New York, NY, 10027, USA
| | - Jordan Fonseca
- Department of Physics, University of Washington, Seattle, WA, 98195, USA
| | - Birui Yang
- Department of Physics, Columbia University, New York, NY, 10027, USA
| | - Yinming Shao
- Department of Physics, Columbia University, New York, NY, 10027, USA
| | - Chun-Ying Huang
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - Taketo Handa
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - Lin Xiong
- Department of Physics, Columbia University, New York, NY, 10027, USA
| | - Matthew Fu
- Department of Physics, Columbia University, New York, NY, 10027, USA
| | - Tsai-Chun Pan
- Department of Physics, Columbia University, New York, NY, 10027, USA
| | - Dorri Halbertal
- Department of Physics, Columbia University, New York, NY, 10027, USA
| | - Xinyi Xu
- Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA
| | - Wenjun Zheng
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY, 11794, USA
| | - P J Schuck
- Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA
| | - A N Pasupathy
- Department of Physics, Columbia University, New York, NY, 10027, USA
| | - C R Dean
- Department of Physics, Columbia University, New York, NY, 10027, USA
| | - Xiaoyang Zhu
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - David H Cobden
- Department of Physics, University of Washington, Seattle, WA, 98195, USA
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, WA, 98195, USA
| | - Mengkun Liu
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY, 11794, USA
| | - M M Fogler
- Department of Physics, University of California, San Diego, La Jolla, CA, 92093, USA
| | - James C Hone
- Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA
| | - D N Basov
- Department of Physics, Columbia University, New York, NY, 10027, USA.
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39
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Yang L, Ding S, Gao J, Wu M. Atypical Sliding and Moiré Ferroelectricity in Pure Multilayer Graphene. PHYSICAL REVIEW LETTERS 2023; 131:096801. [PMID: 37721824 DOI: 10.1103/physrevlett.131.096801] [Citation(s) in RCA: 15] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2023] [Accepted: 07/21/2023] [Indexed: 09/20/2023]
Abstract
Most nonferroelectric two-dimensional materials can be endowed with so-called sliding ferroelectricity via nonequivalent homobilayer stacking, which is not applicable to monoelement systems like pure graphene bilayer with inversion symmetry at any sliding vector. Herein, we show first-principles evidence that multilayer graphene with N>3 can all be ferroelectric, where the polarizations of polar states stem from the symmetry breaking in stacking configurations of across layer instead of adjacent layer, which are electrically switchable via interlayer sliding. The nonpolar states can also be electrically driven to polar states via sliding, and more diverse states with distinct polarizations will emerge in more layers. In contrast to the ferroelectric moiré domains with opposite polarization directions in twisted bilayers reported previously, the moiré pattern in some multilayer graphene systems (e.g., twisted monolayer-trilayer graphene) possess nonzero net polarizations with domains of the same direction separated by nonpolar regions, which can be electrically reversed upon interlayer sliding. The distinct moiré bands of two polar states should facilitate electrical detection of such sliding moiré ferroelectricity during switching.
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Affiliation(s)
- Liu Yang
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Shiping Ding
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Jinhua Gao
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Menghao Wu
- School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
- School of Chemistry, Center of Theoretical Chemistry, Huazhong University of Science and Technology, Wuhan 430074, China
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40
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Wang K, Zhou X, Liu J, Wang X, Zhang X. Compaction of Hydrophobic Molybdenum Disulfide Coatings for Promoting Tribological Behaviors on Engineering Steel. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023. [PMID: 37319373 DOI: 10.1021/acs.langmuir.3c01176] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Ambient environment has a crucial effect on the lubrication performance of molybdenum disulfide (MoS2) coatings. In this work, we fabricated porous MoS2 coatings via a facile optimized aerosol-assisted chemical vapor deposition (AACVD) method. It is found that the obtained MoS2 coating demonstrates outstanding antifriction and antiwear lubrication performance with the coefficient of friction (COF) and wear rate as low as 0.035 and 3.4 × 10-7 mm3/Nm in lower humidity (15 ± 5)%, respectively, which is comparable to the lubrication ability of pure MoS2 in vacuum. In addition, the hydrophobic property of porous MoS2 coatings is suitable for infusing lubrication oil to achieve stable solid-liquid lubrication in higher humidity (85 ± 2)%. The composite lubrication system shows excellent tribological behavior in both dry and wet environments, which will alleviate the sensitivity of the MoS2 coating to the environment and ensure the service life of the engineering steel in complex industrial backgrounds.
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Affiliation(s)
- Keli Wang
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
| | - Xuan Zhou
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
| | - Jian Liu
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
| | - Xiaobo Wang
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
| | - Xia Zhang
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
- Shandong Laboratory of Yantai Advanced Materials and Green Manufacture, No. 300, Hangjiang Road, Yantai 264006, Shandong, China
- Qingdao Center of Resource Chemistry & New Materials, Qingdao 266000, China
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41
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Li W, Zhang X, Yang J, Zhou S, Song C, Cheng P, Zhang YQ, Feng B, Wang Z, Lu Y, Wu K, Chen L. Emergence of ferroelectricity in a nonferroelectric monolayer. Nat Commun 2023; 14:2757. [PMID: 37179407 PMCID: PMC10183010 DOI: 10.1038/s41467-023-38445-1] [Citation(s) in RCA: 21] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Grants] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/03/2022] [Accepted: 04/28/2023] [Indexed: 05/15/2023] Open
Abstract
Ferroelectricity in ultrathin two-dimensional (2D) materials has attracted broad interest due to potential applications in nonvolatile memory, nanoelectronics and optoelectronics. However, ferroelectricity is barely explored in materials with native centro or mirror symmetry, especially in the 2D limit. Here, we report the first experimental realization of room-temperature ferroelectricity in van der Waals layered GaSe down to monolayer with mirror symmetric structures, which exhibits strong intercorrelated out-of-plane and in-plane electric polarization. The origin of ferroelectricity in GaSe comes from intralayer sliding of the Se atomic sublayers, which breaks the local structural mirror symmetry and forms dipole moment alignment. Ferroelectric switching is demonstrated in nano devices fabricated with GaSe nanoflakes, which exhibit exotic nonvolatile memory behavior with a high channel current on/off ratio. Our work reveals that intralayer sliding is a new approach to generate ferroelectricity within mirror symmetric monolayer, and offers great opportunity for novel nonvolatile memory devices and optoelectronics applications.
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Affiliation(s)
- Wenhui Li
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Xuanlin Zhang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Jia Yang
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
- National Center for Nanoscience and Technology, Chinese Academy of Sciences, Beijing, 100190, China
| | - Song Zhou
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Chuangye Song
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Peng Cheng
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Yi-Qi Zhang
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Baojie Feng
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Zhenxing Wang
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
- National Center for Nanoscience and Technology, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yunhao Lu
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, Zhejiang University, Hangzhou, 310027, China.
| | - Kehui Wu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
| | - Lan Chen
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
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42
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Bian R, Cao G, Pan E, Liu Q, Li Z, Liang L, Wu Q, Ang LK, Li W, Zhao X, Liu F. High-Performance Sliding Ferroelectric Transistor Based on Schottky Barrier Tuning. NANO LETTERS 2023; 23:4595-4601. [PMID: 37154868 DOI: 10.1021/acs.nanolett.3c01053] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Sliding ferroelectricity associated with interlayer translation is an excellent candidate for ferroelectric device miniaturization. However, the weak polarization gives rise to the poor performance of sliding ferroelectric transistors with a low on/off ratio and a narrow memory window, which restricts its practical application. To address the issue, we propose a facile strategy by regulating the Schottky barrier in sliding ferroelectric semiconductor transistors based on γ-InSe, in which a high performance with a large on/off ratio (106) and a wide memory window (4.5 V) was ultimately acquired. Additionally, the memory window of the device can be further modulated by electrostatic doping or light excitation. These results open up new ways for designing novel ferroelectric devices based on emerging sliding ferroelectricity.
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Affiliation(s)
- Renji Bian
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 324003, China
| | - Guiming Cao
- School of Information Science and Technology, Xi Chang University, Xi Chang 615013, China
| | - Er Pan
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Qing Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Zefen Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Lei Liang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Qingyun Wu
- Science, Mathematics and Technology, Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore 487372, Singapore
| | - Lay Kee Ang
- Science, Mathematics and Technology, Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore 487372, Singapore
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 324003, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China
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