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Gwak N, Shin S, Yoo H, Seo GW, Kim S, Jang H, Lee M, Park TH, Kim BJ, Lim J, Kim SY, Kim S, Hwang GW, Oh N. Highly Luminescent Shell-Less Indium Phosphide Quantum Dots Enabled by Atomistically Tailored Surface States. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2404480. [PMID: 39016602 DOI: 10.1002/adma.202404480] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2024] [Revised: 07/08/2024] [Indexed: 07/18/2024]
Abstract
Contrary to the prevailing notion that shell structures arise from the intricate chemistry and surface defects of InP quantum dots (QDs), an innovative strategy that remarkably enhances the luminescence efficiency of core-only InP QDs to over 90% is introduced. This paradigm shift is achieved through the concurrent utilization of group 2 and 3 metal-derived ligands, providing an effective remedy for surface defects and facilitating charge recombination. Specifically, a combination of Zn carboxylate and Ga chloride is employed to address the undercoordination issues associated with In and P atoms, leading to the alleviation of in-gap trap states. The intricate interplay and proportional ratio between Ga- and Zn-containing ligands play pivotal roles in attaining record-high luminescence efficiency in core-only InP QDs, as successfully demonstrated across various sizes and color emissions. Moreover, the fabrication of electroluminescent devices relying solely on InP core emission opens a new direction in optoelectronics, demonstrating the potential of the approach not only in optoelectronic applications but also in catalysis or energy conversion by charge transfer.
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Affiliation(s)
- Namyoung Gwak
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Seungki Shin
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Hyeri Yoo
- Center for Semiconductor Technology, Korea Institute of Science and Technology, 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792, Republic of Korea
- Department of Materials Science and Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Gyeong Won Seo
- Center for Semiconductor Technology, Korea Institute of Science and Technology, 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792, Republic of Korea
| | - Seongchan Kim
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Hyunwoo Jang
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Minwoo Lee
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Tae Hwan Park
- Center for Semiconductor Technology, Korea Institute of Science and Technology, 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792, Republic of Korea
| | - Byong Jae Kim
- Department of Energy Science, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, 16419, Republic of Korea
- SKKU Institute of Energy Science and Technology (SIEST), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, 16419, Republic of Korea
- Department of Future Energy Engineering (DFEE), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, 16419, Republic of Korea
| | - Jaehoon Lim
- Department of Energy Science, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, 16419, Republic of Korea
- SKKU Institute of Energy Science and Technology (SIEST), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, 16419, Republic of Korea
- Department of Future Energy Engineering (DFEE), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, 16419, Republic of Korea
| | - Soo Young Kim
- Department of Materials Science and Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Sangtae Kim
- Department of Nuclear Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
| | - Gyu Weon Hwang
- Center for Semiconductor Technology, Korea Institute of Science and Technology, 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792, Republic of Korea
| | - Nuri Oh
- Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
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Shin D, Lee HJ, Jung D, Chae JA, Park JW, Lim J, Im S, Min S, Hwang E, Lee DC, Park YS, Chang JH, Park K, Kim J, Park JS, Bae WK. Growth Control of InP/ZnSe Heterostructured Nanocrystals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2312250. [PMID: 38300222 DOI: 10.1002/adma.202312250] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2023] [Revised: 01/23/2024] [Indexed: 02/02/2024]
Abstract
The morphology of heterostructured semiconductor nanocrystals (h-NCs) dictates the spatial distribution of charge carriers and their recombination dynamics and/or transport, which are the main performance indicators of photonic applications utilizing h-NCs. The inability to control the morphology of heterovalent III-V/II-VI h-NCs composed of heavy-metal-free elements hinders their practical use. As a case study of III-V/II-VI h-NCs, the growth control of ZnSe epilayers on InP NCs is demonstrated here. The anisotropic morphology in InP/ZnSe h-NCs is attributed to the facet-dependent energy costs for the growth of ZnSe epilayers on different facets of InP NCs, and effective chemical means for controlling the growth rates of ZnSe on different surface planes are demonstrated. Ultimately, this article capitalizes on the controlled morphology of InP/ZnSe h-NCs to expand their photophysical characteristics from stable and pure emission to environment-sensitive one, which will facilitate their use in a variety of photonic applications.
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Affiliation(s)
- Doyoon Shin
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Hak June Lee
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Dongju Jung
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jong Ah Chae
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jeong Woo Park
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jaemin Lim
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Seongbin Im
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Sejong Min
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Euyheon Hwang
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Doh C Lee
- Department of Chemical and Biomolecular Engineering, KAIST Institute for the Nanocentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Young-Shin Park
- Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Jun Hyuk Chang
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Kyoungwon Park
- Display Research Center, Korea Electronics Technology Institute (KETI), Seongnam, 13509, Republic of Korea
| | - Junki Kim
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Ji-Sang Park
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Wan Ki Bae
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
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Yuan C, He M, Liao X, Liu M, Zhang Q, Wan Q, Qu Z, Kong L, Li L. Interface defects repair of core/shell quantum dots through halide ion penetration. Chem Sci 2023; 14:13119-13125. [PMID: 38023521 PMCID: PMC10664535 DOI: 10.1039/d3sc04136k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/08/2023] [Accepted: 10/31/2023] [Indexed: 12/01/2023] Open
Abstract
The interface defects of core-shell colloidal quantum dots (QDs) affect their optoelectronic properties and charge transport characteristics. However, the limited available strategies pose challenges in the comprehensive control of these interface defects. Herein, we introduce a versatile strategy that effectively addresses both surface and interface defects in QDs through simple post-synthesis treatment. Through the combination of fine chemical etching methods and spectroscopic analysis, we have revealed that halogens can diffuse within the crystal structure at elevated temperatures, acting as "repairmen" to rectify oxidation and significantly reducing interface defects within the QDs. Under the guidance of this protocol, InP core/shell QDs were synthesized by a hydrofluoric acid-free method with a full width at half-maximum of 37.0 nm and an absolute quantum yield of 86%. To further underscore the generality of this strategy, we successfully applied it to CdSe core/shell QDs as well. These findings provide fundamental insights into interface defect engineering and contribute to the advancement of innovative solutions for semiconductor nanomaterials.
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Affiliation(s)
- Changwei Yuan
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 P. R. China
| | - Mengda He
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 P. R. China
| | - Xinrong Liao
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 P. R. China
| | - Mingming Liu
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 P. R. China
| | - Qinggang Zhang
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 P. R. China
| | - Qun Wan
- Macao Institute of Materials Science and Engineering (MIMSE), Macau University of Science and Technology Taipa Macao 999078 P. R. China
| | - Zan Qu
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 P. R. China
| | - Long Kong
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 P. R. China
| | - Liang Li
- Macao Institute of Materials Science and Engineering (MIMSE), Macau University of Science and Technology Taipa Macao 999078 P. R. China
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