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Gracia-Abad R, Sangiao S, Balakrishnan G, De Teresa JM. FIB-fabrication of superconducting devices based on Bi 2Se 3 junctions. Sci Rep 2024; 14:24294. [PMID: 39414910 PMCID: PMC11484873 DOI: 10.1038/s41598-024-75576-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/04/2024] [Accepted: 10/07/2024] [Indexed: 10/18/2024] Open
Abstract
Recent advances in quantum technologies are highly influencing the current technological scenario. Hybrid devices combining superconductors and topological insulators represent an excellent opportunity to study the topological superconducting phase, which offers interesting features that might have significant implications in the development of quantum sensing and quantum computing. Furthermore, focused ion beam techniques, whose versatility enables to create sophisticated devices with high degree of customization, can enhance the creation of complex devices. Here, we develop a novel approach for creating single-crystal devices that is applied to the fabrication of superconducting devices based on topological insulator Bi2Se3 in a geometry characteristic of a superconducting quantum interference device. Characterization of these devices reveals that superconductivity is induced in our crystal and the supercurrent is modulated by applying an external magnetic field. These results open the way to tailoring the response of hybrid devices that combine superconductors and topological insulators by focused ion beam techniques.
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Affiliation(s)
- Rubén Gracia-Abad
- Instituto de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, Zaragoza, 50009, Spain
| | - Soraya Sangiao
- Instituto de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, Zaragoza, 50009, Spain.
- Laboratorio de Microscopías Avanzadas (LMA), Universidad de Zaragoza, Zaragoza, 50018, Spain.
- Departamento de Física de la Materia Condensada, Universidad de Zaragoza, Zaragoza, 50009, Spain.
| | | | - José María De Teresa
- Instituto de Nanociencia y Materiales de Aragón (INMA), CSIC-Universidad de Zaragoza, Zaragoza, 50009, Spain.
- Departamento de Física de la Materia Condensada, Universidad de Zaragoza, Zaragoza, 50009, Spain.
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Zhou X, Wang H, Liu S, Wang H, Chan JYE, Pan CF, Zhao D, Yang JKW, Qiu CW. Arbitrary engineering of spatial caustics with 3D-printed metasurfaces. Nat Commun 2024; 15:3719. [PMID: 38698001 PMCID: PMC11065864 DOI: 10.1038/s41467-024-48026-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/19/2023] [Accepted: 04/17/2024] [Indexed: 05/05/2024] Open
Abstract
Caustics occur in diverse physical systems, spanning the nano-scale in electron microscopy to astronomical-scale in gravitational lensing. As envelopes of rays, optical caustics result in sharp edges or extended networks. Caustics in structured light, characterized by complex-amplitude distributions, have innovated numerous applications including particle manipulation, high-resolution imaging techniques, and optical communication. However, these applications have encountered limitations due to a major challenge in engineering caustic fields with customizable propagation trajectories and in-plane intensity profiles. Here, we introduce the "compensation phase" via 3D-printed metasurfaces to shape caustic fields with curved trajectories in free space. The in-plane caustic patterns can be preserved or morphed from one structure to another during propagation. Large-scale fabrication of these metasurfaces is enabled by the fast-prototyping and cost-effective two-photon polymerization lithography. Our optical elements with the ultra-thin profile and sub-millimeter extension offer a compact solution to generating caustic structured light for beam shaping, high-resolution microscopy, and light-matter-interaction studies.
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Affiliation(s)
- Xiaoyan Zhou
- Zhejiang Key Laboratory of Micro-nano Quantum Chips and Quantum Control, School of Physics, Zhejiang University, Hangzhou, 310058, China
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
- Engineering Product Development, Singapore University of Technology and Design, Singapore, 487372, Singapore
| | - Hongtao Wang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.
- Engineering Product Development, Singapore University of Technology and Design, Singapore, 487372, Singapore.
| | - Shuxi Liu
- Zhejiang Key Laboratory of Micro-nano Quantum Chips and Quantum Control, School of Physics, Zhejiang University, Hangzhou, 310058, China
| | - Hao Wang
- Engineering Product Development, Singapore University of Technology and Design, Singapore, 487372, Singapore
| | - John You En Chan
- Engineering Product Development, Singapore University of Technology and Design, Singapore, 487372, Singapore
| | - Cheng-Feng Pan
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
- Engineering Product Development, Singapore University of Technology and Design, Singapore, 487372, Singapore
| | - Daomu Zhao
- Zhejiang Key Laboratory of Micro-nano Quantum Chips and Quantum Control, School of Physics, Zhejiang University, Hangzhou, 310058, China.
| | - Joel K W Yang
- Engineering Product Development, Singapore University of Technology and Design, Singapore, 487372, Singapore.
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore.
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S A, Amaladass EP, Amirthapandian S, David C, Mani A. The effect of charged particle irradiation on the transport properties of bismuth chalcogenide topological insulators: a brief review. Phys Chem Chem Phys 2024; 26:2745-2767. [PMID: 38179833 DOI: 10.1039/d3cp02462h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
Topological insulators (TIs) offer a novel platform for achieving exciting applications, such as low-power electronics, spintronics, and quantum computation. Hence, the spin-momentum locked and topologically nontrivial surface state of TIs is highly coveted by the research and development industry. Particle irradiation in TIs is a fast-growing field of research owing to the industrial scalability of the particle irradiation technique. Unfortunately, real three-dimensional TI materials, such as bismuth selenide, invariably host a significant population of charged native defects, which cause the ideally insulating bulk to behave like a metal, masking the relatively weak signatures of metallic topological surface states. Particle irradiation has emerged as an effective technique for Fermi energy tuning to achieve an insulating bulk in TI along with other popularly practiced methods, such as substitution doping and electrical gating. Irradiation methods have been used for many years to enhance the thermoelectric properties of bismuth chalcogenides, predominantly by increasing carrier density. In contrast, uncovering the surface states in bismuth-based TI requires the suppression of carrier density via particle irradiation. Hence, the literature on the effect of irradiation on bismuth chalcogenides extends widely to both ends of the spectrum (thermoelectric and topological properties). This review attempts to collate the available literature on particle irradiation-driven Fermi energy tuning and the modification of topological surface states in TI. Recent studies on particle irradiation in TI have focused on precise local modifications in the TI system to induce magnetic topological ordering and surface selective topological superconductivity. Promising proposals for TI-integrated circuits have also been put forth. The eclectic range of irradiation-based studies on TI has been reviewed in this manuscript.
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Affiliation(s)
- Abhirami S
- Materials Science Group, Indira Gandhi Center for Atomic Research, Kalpakkam-603102, Tamil Nadu, India.
- Homi Bhabha National Institute, Training School Complex, Anushaktinagar, Mumbai-400094, India
| | - E P Amaladass
- Materials Science Group, Indira Gandhi Center for Atomic Research, Kalpakkam-603102, Tamil Nadu, India.
- Homi Bhabha National Institute, Training School Complex, Anushaktinagar, Mumbai-400094, India
| | - S Amirthapandian
- Materials Science Group, Indira Gandhi Center for Atomic Research, Kalpakkam-603102, Tamil Nadu, India.
- Homi Bhabha National Institute, Training School Complex, Anushaktinagar, Mumbai-400094, India
| | - C David
- Materials Science Group, Indira Gandhi Center for Atomic Research, Kalpakkam-603102, Tamil Nadu, India.
| | - Awadhesh Mani
- Materials Science Group, Indira Gandhi Center for Atomic Research, Kalpakkam-603102, Tamil Nadu, India.
- Homi Bhabha National Institute, Training School Complex, Anushaktinagar, Mumbai-400094, India
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Romeo F, Di Bartolomeo A. The experimental demonstration of a topological current divider. Nat Commun 2023; 14:3709. [PMID: 37349330 DOI: 10.1038/s41467-023-39503-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/27/2022] [Accepted: 06/12/2023] [Indexed: 06/24/2023] Open
Affiliation(s)
- Francesco Romeo
- Dipartimento di Fisica "E. R. Caianiello", Università di Salerno, I-84084, Fisciano, Italy.
- INFN, Sez. di Napoli, Gruppo Collegato di Salerno, I-84084, Fisciano, Italy.
| | - Antonio Di Bartolomeo
- Dipartimento di Fisica "E. R. Caianiello", Università di Salerno, I-84084, Fisciano, Italy
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