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Akin J, Zhao Y, Misra Y, Haque AKMN, Fang K. InGaP χ (2) integrated photonics platform for broadband, ultra-efficient nonlinear conversion and entangled photon generation. LIGHT, SCIENCE & APPLICATIONS 2024; 13:290. [PMID: 39402033 DOI: 10.1038/s41377-024-01653-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/02/2024] [Revised: 09/17/2024] [Accepted: 09/24/2024] [Indexed: 10/17/2024]
Abstract
Nonlinear optics plays an important role in many areas of science and technology. The advance of nonlinear optics is empowered by the discovery and utilization of materials with growing optical nonlinearity. Here we demonstrate an indium gallium phosphide (InGaP) integrated photonics platform for broadband, ultra-efficient second-order nonlinear optics. The InGaP nanophotonic waveguide enables second-harmonic generation with a normalized efficiency of 128, 000%/W/cm2 at 1.55 μm pump wavelength, nearly two orders of magnitude higher than the state of the art in the telecommunication C band. Further, we realize an ultra-bright, broadband time-energy entangled photon source with a pair generation rate of 97 GHz/mW and a bandwidth of 115 nm centered at the telecommunication C band. The InGaP entangled photon source shows high coincidence-to-accidental counts ratio CAR > 104 and two-photon interference visibility > 98%. The InGaP second-order nonlinear photonics platform will have wide-ranging implications for non-classical light generation, optical signal processing, and quantum networking.
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Affiliation(s)
- Joshua Akin
- Holonyak Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
- Illinois Quantum Information Science and Technology Center, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Yunlei Zhao
- Holonyak Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
- Illinois Quantum Information Science and Technology Center, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Yuvraj Misra
- Holonyak Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
- Illinois Quantum Information Science and Technology Center, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - A K M Naziul Haque
- Holonyak Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
- Illinois Quantum Information Science and Technology Center, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA
| | - Kejie Fang
- Holonyak Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA.
- Illinois Quantum Information Science and Technology Center, University of Illinois at Urbana-Champaign, Urbana, IL, 61801, USA.
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Hwang H, Noh W, Nurrahman MR, Kim G, Moon K, Ju JJ, Lee H, Seo MK. Spontaneous parametric downconversion photon pair generation in small footprint X-cut periodically poled lithium niobate micro-resonator. OPTICS LETTERS 2024; 49:5379-5382. [PMID: 39352960 DOI: 10.1364/ol.533039] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2024] [Accepted: 08/29/2024] [Indexed: 10/04/2024]
Abstract
Spontaneous parametric downconversion (SPDC) has been crucial for producing non-classical light, such as correlated photon pairs and squeezed states, essential for optical quantum technologies. Recently, thin-film lithium niobate (TFLN)-based devices have enabled high-performance SPDC in on-chip integrated photonic platforms. Here, we developed an X-cut periodically poled lithium niobate (PPLN) racetrack micro-resonator with a compact footprint and demonstrated bright SPDC photon pair generation characterized by distinct resonances and high extraction efficiency. We separately assessed the internal and loaded photon pair generation rates, measuring them at 4.525 MHz/µW and 62.73 kHz/µW, respectively. Our platform is integrated with maturing electro-/thermo-optic TFLN circuit elements and has meaningful potential for advancing active quantum photonic applications.
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Wang JP, Chen X, Zhao Q, Fang Y, Liu Q, Fu J, Liu Y, Xu X, Zhang J, Zhen L, Xu CY, Huang F, Meixner AJ, Zhang D, Gou G, Li Y. Out-of-plane Emission Dipole of Second Harmonic Generation in Odd- and Even-layered vdWs Janus Nb 3SeI 7. ACS NANO 2024; 18:16274-16284. [PMID: 38867607 DOI: 10.1021/acsnano.4c02854] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2024]
Abstract
Integration of atomically thin nonlinear optical (NLO) devices demands an out-of-plane (OP) emission dipole of second harmonic generation (SHG) to enhance the spontaneous emission for nanophotonics. However, the research on van der Waals (vdWs) materials with an OP emission dipole of SHG is still in its infancy. Here, by coupling back focal plane (BFP) imaging with numerical simulations and density functional theory (DFT) calculations, we demonstrate that vdWs Janus Nb3SeI7, ranging from bulk to the monolayer limit, exhibits a dominant OP emission dipole of SHG owing to the breaking of the OP symmetry. Explicitly, even-layered Nb3SeI7 with C6v symmetry is predicted to exhibit a pure OP emission dipole attributed to the only second-order susceptibility coefficient χzxx. Meanwhile, although odd-layered Nb3SeI7 with C3v symmetry has both OP and IP dipole components (χzxx and χyyy), the value of χzxx is 1 order of magnitude greater than that of χyyy, leading to an approximate OP emission dipole of SHG. Moreover, the crystal symmetry and OP emission dipole can be preserved under hydrostatic pressure, accompanied by the enhanced χzxx and the resulting 3-fold increase in SHG intensity. The reported stable OP dipole in 2D vdWs Nb3SeI7 can facilitate the rapid development of chip-integrated NLO devices.
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Affiliation(s)
- Jia-Peng Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Xinfeng Chen
- Frontier Institute of Science and Technology & State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi' an 710049, China
| | - Qiyi Zhao
- School of Science, Xi'an University of Posts and Telecommunications, Xi'an 710199, China
| | - Yuqiang Fang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences, Shanghai 200050, China
| | - Quan Liu
- Institute of Physical and Theoretical Chemistry, Eberhard Karls University Tübingen, Tübingen 72076, Germany
| | - Jierui Fu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Yue Liu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Xinlong Xu
- School of Physics, Northwest University, Xi'an 710069, China
| | - Jia Zhang
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin 150080, China
| | - Liang Zhen
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin 150080, China
| | - Cheng-Yan Xu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin 150080, China
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology Shenzhen, Shenzhen 518055, China
| | - Fuqiang Huang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences, Shanghai 200050, China
| | - Alfred J Meixner
- Institute of Physical and Theoretical Chemistry, Eberhard Karls University Tübingen, Tübingen 72076, Germany
| | - Dai Zhang
- Institute of Physical and Theoretical Chemistry, Eberhard Karls University Tübingen, Tübingen 72076, Germany
| | - Gaoyang Gou
- Frontier Institute of Science and Technology & State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi' an 710049, China
| | - Yang Li
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin 150080, China
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Wang H, Chen Q, Cao Y, Sang W, Tan F, Li H, Wang T, Gan Y, Xiang D, Liu T. Anisotropic Strain-Tailoring Nonlinear Optical Response in van der Waals NbOI 2. NANO LETTERS 2024; 24:3413-3420. [PMID: 38456746 DOI: 10.1021/acs.nanolett.4c00039] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/09/2024]
Abstract
Two-dimensional (2D) NbOI2 demonstrates significant second-harmonic generation (SHG) with a high conversion efficiency. To unlock its full potential in practical applications, it is desirable to modulate the SHG behavior while utilizing the intrinsic lattice anisotropy. Here, we demonstrate direction-specific modulation of the SHG response in NbOI2 by applying anisotropic strain with respect to the intrinsic lattice orientations, where more than 2-fold enhancement in the SHG intensity is achieved under strain along the polar axis. The strain-driven SHG evolution is attributed to the strengthened built-in piezoelectric field (polar axis) and the enlarged Peierls distortions (nonpolar axis). Moreover, we provide quantifications of the correlation between strain and SHG intensity in terms of the susceptibility tensor. Our results demonstrate the effective coupling of orientation-specific strain to the anisotropic SHG response through the intrinsic polar order in 2D nonlinear optical crystals, opening a new paradigm toward the development of functional devices.
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Affiliation(s)
- Han Wang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, and Department of Materials Science, Fudan University, Shanghai 200433, China
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
| | - Quan Chen
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, and Department of Materials Science, Fudan University, Shanghai 200433, China
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, China
| | - Yi Cao
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
| | - Weihui Sang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, and Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Feixia Tan
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
| | - Honghong Li
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
| | - Tinghao Wang
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
| | - Yang Gan
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, and Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Du Xiang
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
| | - Tao Liu
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, and Department of Materials Science, Fudan University, Shanghai 200433, China
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Park T, Stokowski H, Ansari V, Gyger S, Multani KKS, Celik OT, Hwang AY, Dean DJ, Mayor F, McKenna TP, Fejer MM, Safavi-Naeini A. Single-mode squeezed-light generation and tomography with an integrated optical parametric oscillator. SCIENCE ADVANCES 2024; 10:eadl1814. [PMID: 38478618 PMCID: PMC10936947 DOI: 10.1126/sciadv.adl1814] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/03/2023] [Accepted: 02/08/2024] [Indexed: 03/17/2024]
Abstract
Quantum optical technologies promise advances in sensing, computing, and communication. A key resource is squeezed light, where quantum noise is redistributed between optical quadratures. We introduce a monolithic, chip-scale platform that exploits the χ(2) nonlinearity of a thin-film lithium niobate (TFLN) resonator device to efficiently generate squeezed states of light. Our system integrates all essential components-except for the laser and two detectors-on a single chip with an area of one square centimeter, reducing the size, operational complexity, and power consumption associated with conventional setups. Using the balanced homodyne measurement subsystem that we implemented on the same chip, we measure a squeezing of 0.55 decibels and an anti-squeezing of 1.55 decibels. We use 20 milliwatts of input power to generate the parametric oscillator pump field by using second harmonic generation on the same chip. Our work represents a step toward compact and efficient quantum optical systems posed to leverage the rapid advances in integrated nonlinear and quantum photonics.
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Affiliation(s)
- Taewon Park
- Department of Applied Physics and Ginzton Laboratory, Stanford University, Stanford, CA 94305, USA
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Hubert Stokowski
- Department of Applied Physics and Ginzton Laboratory, Stanford University, Stanford, CA 94305, USA
| | - Vahid Ansari
- Department of Applied Physics and Ginzton Laboratory, Stanford University, Stanford, CA 94305, USA
| | - Samuel Gyger
- Department of Applied Physics and Ginzton Laboratory, Stanford University, Stanford, CA 94305, USA
| | - Kevin K. S. Multani
- Department of Applied Physics and Ginzton Laboratory, Stanford University, Stanford, CA 94305, USA
- Department of Physics, Stanford University, Stanford, CA 94305, USA
| | - Oguz Tolga Celik
- Department of Applied Physics and Ginzton Laboratory, Stanford University, Stanford, CA 94305, USA
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
| | - Alexander Y. Hwang
- Department of Applied Physics and Ginzton Laboratory, Stanford University, Stanford, CA 94305, USA
| | - Devin J. Dean
- Department of Applied Physics and Ginzton Laboratory, Stanford University, Stanford, CA 94305, USA
| | - Felix Mayor
- Department of Applied Physics and Ginzton Laboratory, Stanford University, Stanford, CA 94305, USA
| | - Timothy P. McKenna
- Physics and Informatics Laboratories, NTT Research Inc., Sunnyvale, CA 94085, USA
| | - Martin M. Fejer
- Department of Applied Physics and Ginzton Laboratory, Stanford University, Stanford, CA 94305, USA
| | - Amir Safavi-Naeini
- Department of Applied Physics and Ginzton Laboratory, Stanford University, Stanford, CA 94305, USA
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6
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Stokowski HS, Dean DJ, Hwang AY, Park T, Celik OT, McKenna TP, Jankowski M, Langrock C, Ansari V, Fejer MM, Safavi-Naeini AH. Integrated frequency-modulated optical parametric oscillator. Nature 2024; 627:95-100. [PMID: 38448697 DOI: 10.1038/s41586-024-07071-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Accepted: 01/15/2024] [Indexed: 03/08/2024]
Abstract
Optical frequency combs have revolutionized precision measurement, time-keeping and molecular spectroscopy1-7. A substantial effort has developed around 'microcombs': integrating comb-generating technologies into compact photonic platforms5,7-9. Current approaches for generating these microcombs involve either the electro-optic10 or Kerr mechanisms11. Despite rapid progress, maintaining high efficiency and wide bandwidth remains challenging. Here we introduce a previously unknown class of microcomb-an integrated device that combines electro-optics and parametric amplification to yield a frequency-modulated optical parametric oscillator (FM-OPO). In contrast to the other solutions, it does not form pulses but maintains operational simplicity and highly efficient pump power use with an output resembling a frequency-modulated laser12. We outline the working principles of our device and demonstrate it by fabricating the complete optical system in thin-film lithium niobate. We measure pump-to-comb internal conversion efficiency exceeding 93% (34% out-coupled) over a nearly flat-top spectral distribution spanning about 200 modes (over 1 THz). Compared with an electro-optic comb, the cavity dispersion rather than loss determines the FM-OPO bandwidth, enabling broadband combs with a smaller radio-frequency modulation power. The FM-OPO microcomb offers robust operational dynamics, high efficiency and broad bandwidth, promising compact precision tools for metrology, spectroscopy, telecommunications, sensing and computing.
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Affiliation(s)
- Hubert S Stokowski
- Department of Applied Physics and Ginzton Laboratory, Stanford University, Stanford, CA, USA
| | - Devin J Dean
- Department of Applied Physics and Ginzton Laboratory, Stanford University, Stanford, CA, USA
| | - Alexander Y Hwang
- Department of Applied Physics and Ginzton Laboratory, Stanford University, Stanford, CA, USA
| | - Taewon Park
- Department of Applied Physics and Ginzton Laboratory, Stanford University, Stanford, CA, USA
- Department of Electrical Engineering, Stanford University, Stanford, CA, USA
| | - Oguz Tolga Celik
- Department of Applied Physics and Ginzton Laboratory, Stanford University, Stanford, CA, USA
- Department of Electrical Engineering, Stanford University, Stanford, CA, USA
| | - Timothy P McKenna
- Department of Applied Physics and Ginzton Laboratory, Stanford University, Stanford, CA, USA
- Physics and Informatics Laboratories, NTT Research, Sunnyvale, CA, USA
| | - Marc Jankowski
- Department of Applied Physics and Ginzton Laboratory, Stanford University, Stanford, CA, USA
- Physics and Informatics Laboratories, NTT Research, Sunnyvale, CA, USA
| | - Carsten Langrock
- Department of Applied Physics and Ginzton Laboratory, Stanford University, Stanford, CA, USA
| | - Vahid Ansari
- Department of Applied Physics and Ginzton Laboratory, Stanford University, Stanford, CA, USA
| | - Martin M Fejer
- Department of Applied Physics and Ginzton Laboratory, Stanford University, Stanford, CA, USA
| | - Amir H Safavi-Naeini
- Department of Applied Physics and Ginzton Laboratory, Stanford University, Stanford, CA, USA.
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Guan J, Lin J, Gao R, Li C, Zhao G, Li M, Wang M, Qiao L, Cheng Y. Low-Threshold Anti-Stokes Raman Microlaser on Thin-Film Lithium Niobate Chip. MATERIALS (BASEL, SWITZERLAND) 2024; 17:1042. [PMID: 38473514 DOI: 10.3390/ma17051042] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2024] [Revised: 02/18/2024] [Accepted: 02/21/2024] [Indexed: 03/14/2024]
Abstract
Raman microlasers form on-chip versatile light sources by optical pumping, enabling numerical applications ranging from telecommunications to biological detection. Stimulated Raman scattering (SRS) lasing has been demonstrated in optical microresonators, leveraging high Q factors and small mode volume to generate downconverted photons based on the interaction of light with the Stokes vibrational mode. Unlike redshifted SRS, stimulated anti-Stokes Raman scattering (SARS) further involves the interplay between the pump photon and the SRS photon to generate an upconverted photon, depending on a highly efficient SRS signal as an essential prerequisite. Therefore, achieving SARS in microresonators is challenging due to the low lasing efficiencies of integrated Raman lasers caused by intrinsically low Raman gain. In this work, high-Q whispering gallery microresonators were fabricated by femtosecond laser photolithography assisted chemo-mechanical etching on thin-film lithium niobate (TFLN), which is a strong Raman-gain photonic platform. The high Q factor reached 4.42 × 106, which dramatically increased the circulating light intensity within a small volume. And a strong Stokes vibrational frequency of 264 cm-1 of lithium niobate was selectively excited, leading to a highly efficient SRS lasing signal with a conversion efficiency of 40.6%. And the threshold for SRS was only 0.33 mW, which is about half the best record previously reported on a TFLN platform. The combination of high Q factors, a small cavity size of 120 μm, and the excitation of a strong Raman mode allowed the formation of SARS lasing with only a 0.46 mW pump threshold.
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Affiliation(s)
- Jianglin Guan
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, China
- The Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Jintian Lin
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Renhong Gao
- The Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China
| | - Chuntao Li
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, China
- The Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Guanghui Zhao
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China
- School of Physical Science and Technology, Shanghai Tech University, Shanghai 200031, China
| | - Minghui Li
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Min Wang
- The Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Lingling Qiao
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China
| | - Ya Cheng
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, China
- The Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
- State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
- Collaborative Innovation Center of Light Manipulations and Applications, Shandong Normal University, Jinan 250358, China
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
- Hefei National Laboratory, Hefei 230088, China
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Tang M, Chen D, Zhang M, Jiang F, Wang Y. Optimized Design of Lithium Niobate Tuning Forks for the Measurement of Fluid Characteristic Parameters. MICROMACHINES 2023; 14:2138. [PMID: 38138307 PMCID: PMC10745021 DOI: 10.3390/mi14122138] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2023] [Revised: 11/17/2023] [Accepted: 11/20/2023] [Indexed: 12/24/2023]
Abstract
The unique double-cantilever beam structure and vibration mode of the tuning fork enable the measuring of fluid density and viscosity synchronously in a decoupling manner. Therefore, it is widely employed in oil and gas development and in petrochemical, food, textile, and other industries. In this paper, quality factors are used to characterize the energy losses of lithium niobate tuning forks when vibrating in a fluid, and the influence parameters, such as length, width, and thickness of the tuning fork arm, etc., of different quality factors are examined with a focus on the viscous quality factor of the fluid. The optimized design of lithium niobate tuning fork dimensions is carried out on this premise, and the analytical solution of the optimal dimension of the lithium niobate tuning fork in the air is obtained. Secondly, the optimal dimension of the lithium niobate tuning fork in fluids is given out by finite element simulation, and the sensitivity of the optimized fork to the viscosity of fluids is investigated. The results show that the optimized tuning fork has a higher quality factor, and thus has a larger parameter measurement range as well as being more sensitive to the change in the fluid density and viscosity. Therefore, the results are of great significance for guiding the preparation and practical application of lithium niobate tuning forks.
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Affiliation(s)
- Man Tang
- State Key Laboratory of Acoustics, Institute of Acoustics, Chinese Academy of Sciences, Beijing 100190, China; (M.T.); (F.J.); (Y.W.)
- University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Engineering Research Center of Sea Deep Drilling and Exploration, Institute of Acoustics, Chinese Academy of Sciences, Beijing 100190, China
| | - Dehua Chen
- State Key Laboratory of Acoustics, Institute of Acoustics, Chinese Academy of Sciences, Beijing 100190, China; (M.T.); (F.J.); (Y.W.)
- University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Engineering Research Center of Sea Deep Drilling and Exploration, Institute of Acoustics, Chinese Academy of Sciences, Beijing 100190, China
| | - Mi Zhang
- School of Intelligent Technology and Engineering, Chongqing University of Science and Technology, Chongqing 401331, China;
| | - Feng Jiang
- State Key Laboratory of Acoustics, Institute of Acoustics, Chinese Academy of Sciences, Beijing 100190, China; (M.T.); (F.J.); (Y.W.)
- University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Engineering Research Center of Sea Deep Drilling and Exploration, Institute of Acoustics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yu Wang
- State Key Laboratory of Acoustics, Institute of Acoustics, Chinese Academy of Sciences, Beijing 100190, China; (M.T.); (F.J.); (Y.W.)
- University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Engineering Research Center of Sea Deep Drilling and Exploration, Institute of Acoustics, Chinese Academy of Sciences, Beijing 100190, China
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