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Lu Y, Alam F, Shamsi J, Abdi-Jalebi M. Doping Up the Light: A Review of A/B-Site Doping in Metal Halide Perovskite Nanocrystals for Next-Generation LEDs. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2024; 128:10084-10107. [PMID: 38919725 PMCID: PMC11194817 DOI: 10.1021/acs.jpcc.4c00749] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/02/2024] [Revised: 05/29/2024] [Accepted: 05/29/2024] [Indexed: 06/27/2024]
Abstract
All-inorganic metal halide perovskite nanocrystals (PeNCs) show great potential for the next generation of perovskite light-emitting diodes (PeLEDs). However, trap-assisted recombination negatively impacts the optoelectronic properties of PeNCs and prevents their widespread adoption for commercial exploitation. To mitigate trap-assisted recombination and further enhance the external quantum efficiency of PeLEDs, A/B-site doping has been widely investigated to tune the bandgap of PeNCs. The bandgap of PeNCs is adjustable within a small range (no more than 0.1 eV) by A-site cation doping, resulting in changes in the bond length of Pb-X and the angle of [PbX6]4. Nevertheless, B-site doping of PeNCs has a more significant impact on the bandgap level through modification of surface defect states. In this perspective, we delve into the synthesis of PeNCs with A/B-site doping and their impacts on the structural and optoelectronic properties, as well as their impacts on the performance of subsequent PeLEDs. Furthermore, we explore the A-site and B-site doping mechanisms and the impact of device architecture on doped PeNCs to maximize the performance and stability of PeLEDs. This work presents a comprehensive overview of the studies on A-site and B-site doping in PeNCs and approaches to unlock their full potential in the next generation of LEDs.
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Affiliation(s)
- Ying Lu
- Institute
for Materials Discovery, University College
London, Malet Place, London WC1E
7JE, United Kingdom
| | - Firoz Alam
- Department
of Electronic and Electrical Engineering, University College London, London WC1E 6BT, United
Kingdom
| | - Javad Shamsi
- Cavendish
Laboratory, Department of Physics, University
of Cambridge, Cambridge CB3 0HE, United Kingdom
| | - Mojtaba Abdi-Jalebi
- Institute
for Materials Discovery, University College
London, Malet Place, London WC1E
7JE, United Kingdom
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Trukhanov VA, Sosorev AY, Dominskiy DI, Fedorenko RS, Tafeenko VA, Borshchev OV, Ponomarenko SA, Paraschuk DY. Dual Optoelectronic Organic Field-Effect Device: Combination of Electroluminescence and Photosensitivity. Molecules 2024; 29:2533. [PMID: 38893409 PMCID: PMC11173939 DOI: 10.3390/molecules29112533] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/07/2024] [Revised: 05/12/2024] [Accepted: 05/23/2024] [Indexed: 06/21/2024] Open
Abstract
Merging the functionality of an organic field-effect transistor (OFET) with either a light emission or a photoelectric effect can increase the efficiency of displays or photosensing devices. In this work, we show that an organic semiconductor enables a multifunctional OFET combining electroluminescence (EL) and a photoelectric effect. Specifically, our computational and experimental investigations of a six-ring thiophene-phenylene co-oligomer (TPCO) revealed that this material is promising for OFETs, light-emitting, and photoelectric devices because of the large oscillator strength of the lowest-energy singlet transition, efficient luminescence, pronounced delocalization of the excited state, and balanced charge transport. The fabricated OFETs showed a photoelectric response for wavelengths shorter than 530 nm and simultaneously EL in the transistor channel, with a maximum at ~570 nm. The devices demonstrated an EL external quantum efficiency (EQE) of ~1.4% and a photoelectric responsivity of ~0.7 A W-1, which are among the best values reported for state-of-the-art organic light-emitting transistors and phototransistors, respectively. We anticipate that our results will stimulate the design of efficient materials for multifunctional organic optoelectronic devices and expand the potential applications of organic (opto)electronics.
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Affiliation(s)
- Vasiliy A. Trukhanov
- Faculty of Physics, Lomonosov Moscow State University, Leninskie Gory 1/62, Moscow 119991, Russia
| | - Andrey Y. Sosorev
- Faculty of Physics, Lomonosov Moscow State University, Leninskie Gory 1/62, Moscow 119991, Russia
- Enikolopov Institute of Synthetic Polymeric Materials, Russian Academy of Science, Profsoyuznaya 70, Moscow 117393, Russia
| | - Dmitry I. Dominskiy
- Faculty of Physics, Lomonosov Moscow State University, Leninskie Gory 1/62, Moscow 119991, Russia
- Enikolopov Institute of Synthetic Polymeric Materials, Russian Academy of Science, Profsoyuznaya 70, Moscow 117393, Russia
| | - Roman S. Fedorenko
- Faculty of Physics, Lomonosov Moscow State University, Leninskie Gory 1/62, Moscow 119991, Russia
| | - Victor A. Tafeenko
- Department of Chemistry, Lomonosov Moscow State University, Leninskie Gory 1/3, Moscow 119991, Russia
| | - Oleg V. Borshchev
- Enikolopov Institute of Synthetic Polymeric Materials, Russian Academy of Science, Profsoyuznaya 70, Moscow 117393, Russia
| | - Sergey A. Ponomarenko
- Enikolopov Institute of Synthetic Polymeric Materials, Russian Academy of Science, Profsoyuznaya 70, Moscow 117393, Russia
| | - Dmitry Y. Paraschuk
- Faculty of Physics, Lomonosov Moscow State University, Leninskie Gory 1/62, Moscow 119991, Russia
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Channa IA, Shah AA, Rizwan M, Makhdoom MA, Chandio AD, Shar MA, Mahmood A. Process Parameter Optimization of a Polymer Derived Ceramic Coatings for Producing Ultra-High Gas Barrier. MATERIALS 2021; 14:ma14227000. [PMID: 34832401 PMCID: PMC8625640 DOI: 10.3390/ma14227000] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/12/2021] [Revised: 10/20/2021] [Accepted: 10/27/2021] [Indexed: 12/23/2022]
Abstract
Silica is one of the most efficient gas barrier materials, and hence is widely used as an encapsulating material for electronic devices. In general, the processing of silica is carried out at high temperatures, i.e., around 1000 °C. Recently, processing of silica has been carried out from a polymer called Perhydropolysilazane (PHPS). The PHPS reacts with environmental moisture or oxygen and yields pure silica. This material has attracted many researchers and has been widely used in many applications such as encapsulation of organic light-emitting diodes (OLED) displays, semiconductor industries, and organic solar cells. In this paper, we have demonstrated the process optimization of the conversion of the PHPS into silica in terms of curing methods as well as curing the environment. Various curing methods including exposure to dry heat, damp heat, deep UV, and their combination under different environments were used to cure PHPS. FTIR analysis suggested that the quickest conversion method is the irradiation of PHPS with deep UV and simultaneous heating at 100 °C. Curing with this method yields a water permeation rate of 10−3 g/(m2⋅day) and oxygen permeation rate of less than 10−1 cm3/(m2·day·bar). Rapid curing at low-temperature processing along with barrier properties makes PHPS an ideal encapsulating material for organic solar cell devices and a variety of similar applications.
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Affiliation(s)
- Iftikhar Ahmed Channa
- Department of Metallurgical Engineering, NED University of Engineering and Technology, Off University Road, Karachi 75270, Pakistan; (A.A.S.); (M.R.); (A.D.C.)
- Correspondence: (I.A.C.); (A.M.)
| | - Aqeel Ahmed Shah
- Department of Metallurgical Engineering, NED University of Engineering and Technology, Off University Road, Karachi 75270, Pakistan; (A.A.S.); (M.R.); (A.D.C.)
| | - Muhammad Rizwan
- Department of Metallurgical Engineering, NED University of Engineering and Technology, Off University Road, Karachi 75270, Pakistan; (A.A.S.); (M.R.); (A.D.C.)
| | - Muhammad Atif Makhdoom
- Institute of Metallurgy and Materials Engineering, University of the Punjab, Lahore 54590, Pakistan;
| | - Ali Dad Chandio
- Department of Metallurgical Engineering, NED University of Engineering and Technology, Off University Road, Karachi 75270, Pakistan; (A.A.S.); (M.R.); (A.D.C.)
| | - Muhammad Ali Shar
- Department of Mechanical & Energy Systems Engineering, Faculty of Engineering and Informatics, University of Bradford, Bradford BD7 1DP, UK;
| | - Asif Mahmood
- Chemical Engineering Department, College of Engineering, King Saud University Riyadh, Riyadh 11451, Saudi Arabia
- Correspondence: (I.A.C.); (A.M.)
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Li W, Li M, Li W, Xu Z, Gan L, Liu K, Zheng N, Ning C, Chen D, Wu YC, Su SJ. Spiral Donor Design Strategy for Blue Thermally Activated Delayed Fluorescence Emitters. ACS APPLIED MATERIALS & INTERFACES 2021; 13:5302-5311. [PMID: 33470809 DOI: 10.1021/acsami.0c19302] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Thermally activated delayed fluorescence (TADF) emitters with a spiral donor show tremendous potential toward high-level efficient blue organic light-emitting diodes (OLEDs). However, the underlying design strategy of the spiral donor used for blue TADF emitters remains unclear. As a consequence, researchers often do "try and error" work in the development of new functional spiral donor fragments, making it slow and inefficient. Herein, we demonstrate that the energy level relationships between the spiral donor and the luminophore lead to a significant effect on the photoluminescent quantum yields (PLQYs) of the target materials. In addition, a method involving quantum chemistry simulations that can accurately predict the aforementioned energy level relationships by simulating the spin density distributions of the triplet excited states of the spiral donor and corresponding TADF emitters and the triplet excited natural transition orbitals of the TADF emitters is established. Moreover, it also revealed that the steric hindrance in this series of molecules can form a nearly unchanged singlet (S1) state geometry, leading to a reduced nonradiative decay and high PLQY, while a moderated donor-acceptor (D-A) torsion in the triplet (T1) state can induce a strong vibronic coupling between the charge-transfer triplet (3CT) state and the local triplet (3LE) state, achieving an effective reverse intersystem crossing (RISC) process. Furthermore, an electric-magnetic coupling is formed between the high-lying 3LE state and the charge-transfer singlet (1CT) state, which may open another RISC channel. Remarkably, in company with the optimized molecular structure and energy alignment, the pivotal TADF emitter DspiroS-TRZ achieved 99.9% PLQY, an external quantum efficiency (EQE) of 38.4%, which is the highest among all blue TADF emitters reported to date.
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Affiliation(s)
- Wei Li
- State Key Laboratory of Luminescent Materials and Devices and Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Wushan Road 381, Guangzhou 510640, Guangdong Province, P. R. China
| | - Mengke Li
- State Key Laboratory of Luminescent Materials and Devices and Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Wushan Road 381, Guangzhou 510640, Guangdong Province, P. R. China
| | - Wenqi Li
- State Key Laboratory of Luminescent Materials and Devices and Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Wushan Road 381, Guangzhou 510640, Guangdong Province, P. R. China
| | - Zhida Xu
- State Key Laboratory of Luminescent Materials and Devices and Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Wushan Road 381, Guangzhou 510640, Guangdong Province, P. R. China
| | - Lin Gan
- State Key Laboratory of Luminescent Materials and Devices and Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Wushan Road 381, Guangzhou 510640, Guangdong Province, P. R. China
| | - Kunkun Liu
- State Key Laboratory of Luminescent Materials and Devices and Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Wushan Road 381, Guangzhou 510640, Guangdong Province, P. R. China
| | - Nan Zheng
- State Key Laboratory of Luminescent Materials and Devices and Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Wushan Road 381, Guangzhou 510640, Guangdong Province, P. R. China
| | - Chengyun Ning
- Key Laboratory of Biomedical Engineering of Guangdong Province, South China University of Technology, Wushan Road 381, Guangzhou 510640, Guangdong Province, P. R. China
| | - Dongcheng Chen
- State Key Laboratory of Luminescent Materials and Devices and Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Wushan Road 381, Guangzhou 510640, Guangdong Province, P. R. China
| | - Yuan-Chun Wu
- Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., No.9-2, Tang Ming Avenue, Guang Ming District, Shenzhen 518132, Guangdong Province, P. R. China
| | - Shi-Jian Su
- State Key Laboratory of Luminescent Materials and Devices and Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Wushan Road 381, Guangzhou 510640, Guangdong Province, P. R. China
- South China Institute of Collaborative Innovation, Dongguan 523808, Guangdong Province, P. R. China
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Electric field effects on the charge transport in organic semiconductors based on improved variable-range hopping theory. Chem Phys Lett 2021. [DOI: 10.1016/j.cplett.2020.138275] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/22/2022]
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Kagatikar S, Sunil D, Kekuda D, Kulkarni SD, Abdul Salam AA. New salicylaldehyde azine esters: Structural, aggregation induced fluorescence, electrochemical and theoretical studies. J Mol Liq 2020. [DOI: 10.1016/j.molliq.2020.114029] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/03/2023]
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Lo MF, Ng TW, Shen D, Lee CS. Charge Energetics and Electronic Level Changes At the Copper(II) Phthalocyanine/Fullerene Junction Upon Photoexcitation. ACS APPLIED MATERIALS & INTERFACES 2020; 12:42992-42996. [PMID: 32845116 DOI: 10.1021/acsami.0c08497] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Energy offset at the donor (D)/acceptor (A) interface plays an important role in charge separation in organic photovoltaics. Its magnitude determines the charge separation process under illumination. Extensive studies have been carried out for elucidating the charge transfer (CT) process at different D/A junctions. These works lead to two different views: upon photoexcitation, energies would be (1) consumed in molecular polarization and orientation such that those opposite charges would overcome mutual Coulombic attractive potential at the interface and (2) spent on promoting charges to high-lying delocalized energy states (i.e., hot states), which is necessarily important prior to charge separation. Under these two scheme of studies, the electronic structures and the charge behaviors at the D/A interface should be different under photoexcitation, yet there is so far no direct experimental approach for probing the changes in electronics structures (i.e., Fermi level, vacuum level, frontier molecular orbitals, etc.) upon photoexcitation. Herein, a modified photoelectron spectroscopy (PES) system with an additional solar simulator is used to study the charge distributions and electronic interactions for a standard D/A heterojunction (i.e., copper phthalocyanine (CuPc)/ fullerene (C60)) under photoexcitation. CT states formed as a result of photon energy transfer at the CuPc/C60 junction. Subsequent superpositions of charge transfer and electron polarization effects increase the D/A energy level offsets from 0.75 (ground state measured in the dark) to 1.07 eV (high-lying state measured upon illumination). We showed that there is excess energy consumed for a subtle change in the energy level alignment of the CuPc/C60 junction under illumination, suggesting a new insight for the energy loss mechanism during the photocharge generation processes.
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Affiliation(s)
- Ming-Fai Lo
- Center of Super-Diamond and Advanced Films (COSDAF), Department of Chemistry, City University of Hong Kong, Hong Kong SAR, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518000, P. R. China
| | - Tsz-Wai Ng
- Center of Super-Diamond and Advanced Films (COSDAF), Department of Chemistry, City University of Hong Kong, Hong Kong SAR, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518000, P. R. China
| | - Dong Shen
- Center of Super-Diamond and Advanced Films (COSDAF), Department of Chemistry, City University of Hong Kong, Hong Kong SAR, P. R. China
| | - Chun-Sing Lee
- Center of Super-Diamond and Advanced Films (COSDAF), Department of Chemistry, City University of Hong Kong, Hong Kong SAR, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518000, P. R. China
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