Modelling electrical conduction in nanostructure assemblies through complex networks

Ultimate Charge Transport Regimes in Doping-Controlled Graphene Laminates: Phonon-Assisted Processes Revealed by the Linear Magnetoresistance

Understanding and controlling the electrical properties of solution-processed 2D materials is key to further printed electronics progress. Here, we demonstrate that the thermolysis of the aromatic intercalants utilized in nanosheet exfoliation for graphene laminates allows for high intrinsic mobility and the simultaneous control of doping type (n- and p-) and concentration over a wide range. We establish that the intraflake mobility is high by observing a linear magnetoresistance of such solution-processed graphene laminates and using it to devolve the interflake tunneling and intralayer magnetotransport. Consequently, we determine the temperature dependencies of the inter- and intralayer characteristics. The intraflake transport appears to be dominated by electron-phonon scattering processes at temperatures T > 20 K, while the interflake transport is governed by phonon-assisted tunneling. In particular, we identify the efficiency of phonon-assisted tunneling as the main limiting factor for electrical conductivity in graphene laminates at room temperature. We also demonstrate a thermoelectric sensitivity of around 50 μV·K-1 in a solution-processed metal-free graphene-based thermocouple.

Rapid Tissue Perfusion Using Sacrificial Percolation of Anisotropic Networks

Tissue engineering has long sought to rapidly generate perfusable vascularized tissues with vessel sizes spanning those seen in humans. Current techniques such as biological 3D printing (top-down) and cellular self-assembly (bottom-up) are resource intensive and have not overcome the inherent tradeoff between vessel resolution and assembly time, limiting their utility and scalability for engineering tissues. We present a flexible and scalable technique termed SPAN - Sacrificial Percolation of Anisotropic Networks, where a network of perfusable channels is created throughout a tissue in minutes, irrespective of its size. Conduits with length scales spanning arterioles to capillaries are generated using pipettable alginate fibers that interconnect above a percolation density threshold and are then degraded within constructs of arbitrary size and shape. SPAN is readily used within common tissue engineering processes, can be used to generate endothelial cell-lined vasculature in a multi-cell type construct, and paves the way for rapid assembly of perfusable tissues.

Laser Engineering Nanocarbon Phases within Diamond for Science and Electronics

Diamond, as the densest allotrope of carbon, displays a range of exemplary material properties that are attractive from a device perspective. Despite diamond displaying high carbon-carbon bond strength, ultrashort (femtosecond) pulse laser radiation can provide sufficient energy for highly localized internal breakdown of the diamond lattice. The less-dense carbon structures generated on lattice breakdown are subject to significant pressure from the surrounding diamond matrix, leading to highly unusual formation conditions. By tailoring the laser dose delivered to the diamond, it is shown that it is possible to create continuously modified internal tracks with varying electrical conduction properties. In addition to the widely reported conducting tracks, conditions leading to semiconducting and insulating written tracks have been identified. High-resolution transmission electron microscopy (HRTEM) is used to visualize the structural transformations taking place and provide insight into the different conduction regimes. The HRTEM reveals a highly diverse range of nanocarbon structures are generated by the laser irradiation, including many signatures for different so-called diaphite complexes, which have been seen in meteorite samples and seem to mediate the laser-induced breakdown of the diamond. This work offers insight into possible formation methods for the diamond and related nanocarbon phases found in meteorites.

Single-Gate In-Transistor Readout of Current Superposition and Collapse Utilizing Quantum Tunneling and Ferroelectric Switching

In nanostructure assemblies, the superposition of current paths forms microscopic electric circuits, and different circuit networks produce varying results, particularly when utilized as transistor channels for computing applications. However, the intricate nature of assembly networks and the winding paths of commensurate currents hinder standard circuit modeling. Inspired by the quantum collapse of superposition states for information decoding in quantum circuits, the implementation of analogous current path collapse to facilitate the detection of microscopic circuits by modifying their network topology is explored. Here, the superposition and collapse of current paths in gate-all-around polysilicon nanosheet arrays are demonstrated to enrich the computational resources within transistors by engineering the channel length and quantity. Switching the ferroelectric polarization of Hf0.5 Zr0.5 O2 gate dielectric, which drives these transistors out-of-equilibrium, decodes the output polymorphism through circuit topological modifications. Furthermore, a protocol for the single-electron readout of ferroelectric polarization is presented with tailoring the channel coherence. The introduction of lateral path superposition results into intriguing metal-to-insulator transitions due to transient behavior of ferroelectric switching. This ability to adjust the current networks within transistors and their interaction with ferroelectric polarization in polycrystalline nanostructures lays the groundwork for generating diverse current characteristics as potential physical databases for optimization-based computing.

Edge and Interface Resistances Create Distinct Trade-Offs When Optimizing the Microstructure of Printed van der Waals Thin-Film Transistors

Inks based on two-dimensional (2D) materials could be used to tune the properties of printed electronics while maintaining compatibility with scalable manufacturing processes. However, a very wide range of performances have been reported in printed thin-film transistors in which the 2D channel material exhibits considerable variation in microstructure. The lack of quantitative physics-based relationships between film microstructure and transistor performance limits the codesign of exfoliation, sorting, and printing processes to inefficient empirical approaches. To rationally guide the development of 2D inks and related processing, we report a gate-dependent resistor network model that establishes distinct microstructure-performance relationships created by near-edge and intersheet resistances in printed van der Waals thin-film transistors. The model is calibrated by analyzing electrical output characteristics of model transistors consisting of overlapping 2D nanosheets with varied thicknesses that are mechanically exfoliated and transferred. Kelvin probe force microscopy analysis on the model transistors leads to the discovery that the nanosheet edges, not the intersheet resistance, limit transport due to their impact on charge carrier depletion and scattering. Our model suggests that when transport in a 2D material network is limited by the near-edge resistance, the optimum nanosheet thickness is dictated by a trade-off between charged impurity screening and gate screening, and the film mobilities are more sensitive to variations in printed nanosheet density. Removal of edge states can enable the realization of higher mobilities with thinner nanosheets due to reduced junction resistances and reduced gate screening. Our analysis of the influence of nanosheet edges on the effective film mobility not only examines the prospects of extant exfoliation methods to achieve the optimum microstructure but also provides important perspectives on processes that are essential to maximizing printed film performance.

In situ synthesis of hierarchically-assembled three-dimensional ZnS nanostructures and 3D printed visualization

Nanomaterials have gained enormous interest in improving the performance of energy harvest systems, biomedical devices, and high-strength composites. Many studies were performed fabricating more elaborate and heterogeneous nanostructures then the structures were characterized using TEM tomographic images, upgrading the fabrication technique. Despite the effort, intricate fabrication process, agglomeration characteristic, and non-uniform output were still limited to presenting the 3D panoramic views straightforwardly. Here we suggested in situ synthesis method to prepare complex and hierarchically-assembled nanostructures that consisted of ZnS nanowire core and nanoparticles under Ag₂S catalyst. We demonstrated that the vaporized Zn and S were solidified in different shapes of nanostructures with the temperatures solely. To our knowledge, this is the first demonstration of synthesizing heterogeneous nanostructures, consisting of a nanowire from the vapor-liquid-solid and then nanoparticles from the vapor-solid grown mechanism by in situ temperature control. The obtained hierarchically-assembled ZnS nanostructures were characterized by various TEM technologies, verifying the crystal growth mechanism. Lastly, electron tomography and 3D printing enabled the nanoscale structures to visualize with centimeter scales. The 3D printing from randomly fabricated nanomaterials is rarely performed to date. The collaborating work could offer a better opportunity to fabricate advanced and sophisticated nanostructures.

Mitigation of Edge and Surface States Effects in Two-Dimensional WS2 for Photocatalytic H2 Generation

Large scale development of the 2D transition metal di-chalcogenides (TMDC) relies on landmark improvement in performance, which could emerge from nanostructuration. Using p-WS₂ nanoflakes with different degrees of exfoliation and fracturing, perspectives were provided to develop high-surface-area 2D p-WS₂ films for the photocatalytic hydrogen generation. The critical role of inter-nanoflakes contacts within high-surface-area 2D films was demonstrated, highlighting the benefit of plane/plane versus edge/plane contacts. Evidence of the high density of surface states displayed by these 2D films was provided through electrochemical measurements. In addition to operating as recombination centers, the surface states were shown to give rise to deleterious Fermi-level pinning (FLP), which dramatically decreased the efficiency of charge carrier separation. Lastly, promising strategies yielding FLP suppression via surface states modification were proposed. In particular, use of a multifunctional ultrathin film displaying healing, catalytic, and n-type semiconduction properties was shown to greatly enhance charge carrier separation and transport to the photo-electrode/electrolyte interface. When the 2D photoelectrodes were fabricated with the above prerequisites (i. e., a high proportion of plane/plane contacts and a successful surface states chemical modification), a photocurrent up to 4.5 mA cm^-2 was achieved for the first time on 2D p-WS₂ photocathodes for hydrogen generation.

Unzipping Carbon Nanotube Bundles through NH-π Stacking for Enhanced Electrical and Thermal Transport

Bundling of single-walled carbon nanotubes (SWCNTs) significantly undermines their superior thermal and electrical properties. Realizing stable, homogeneous, and surfactant-free dispersion of SWCNTs in solvents and composites has long been regarded as a key challenge. Here, we report amine-containing aromatic and cyclohexane molecules, which are common chain extenders (CEs) for epoxy curing in industry, can be used to effectively disperse CNTs. We achieve single-tube-level dispersion of SWCNTs in CE solvents, as demonstrated by the strong chirality-dependent absorption and photoluminescence emission. The SWCNT-CE dispersion remains stable under ambient conditions for months. The excellent dispersibility and stability are attributed to the formation of an n-type charge-transfer complex through the NH-π interaction between the amine group of CEs and the delocalized π bond of SWCNTs, which is confirmed by the negative Seebeck coefficient of the CE-functionalized SWCNT films, the red shift of the G band in the Raman spectra, and the NH-π peak in X-ray photoelectron spectroscopy. The high dispersibility of CEs significantly improves the electrical and thermal transport of macroscale CNT assemblies. The sheet resistance of the CE-dispersed SWCNT thin films reaches 161 Ω sq^-1 at 80.8% optical transmittance after functional modification by HNO₃. Moreover, the CEs cross-link CNTs and epoxy molecules, forming a pathway for phonon transport in CNT/epoxy nanocomposites. The thermal conductivity of the CE-CNT-epoxy composite is enhanced by 1850% compared with the original epoxy, which is the highest enhancement reported to date for CNT/epoxy nanocomposites. The CE-based NH-π interaction provides a new paradigm for the effective and stable dispersion of SWCNTs in a facile and scalable process.

Engineered nanoparticle network models for autonomous computing

Materials that exhibit synaptic properties are a key target for our effort to develop computing devices that mimic the brain intrinsically. If successful, they could lead to high performance, low energy consumption, and huge data storage. A 2D square array of engineered nanoparticles (ENPs) interconnected by an emergent polymer network is a possible candidate. Its behavior has been observed and characterized using coarse-grained molecular dynamics (CGMD) simulations and analytical lattice network models. Both models are consistent in predicting network links at varying temperatures, free volumes, and E-field (E⃗) strengths. Hysteretic behavior, synaptic short-term plasticity and long-term plasticity-necessary for brain-like data storage and computing-have been observed in CGMD simulations of the ENP networks in response to E-fields. Non-volatility properties of the ENP networks were also confirmed to be robust to perturbations in the dielectric constant, temperature, and affine geometry.

A Bi-Anti-Ambipolar Field Effect Transistor

Multistate logic is recognized as a promising approach to increase the device density of microelectronics, but current approaches are offset by limited performance and large circuit complexity. We here demonstrate a route toward increased integration density that is enabled by a mechanically tunable device concept. Bi-anti-ambipolar transistors (bi-AATs) exhibit two distinct peaks in their transconductance and can be realized by a single 2D-material heterojunction-based solid-state device. Dynamic deformation of the device reveals the co-occurrence of two conduction pathways to be the origin of this previously unobserved behavior. Initially, carrier conduction proceeds through the junction edge, but illumination and application of strain can increase the recombination rate in the junction sufficiently to support an alternative carrier conduction path through the junction area. Optical characterization reveals a tunable emission pattern and increased optoelectronic responsivity that corroborates our model. Strain control permits the optimization of the conduction efficiency through both pathways and can be employed in quaternary inverters for future multilogic applications.

Circuitscape in Julia: Empowering Dynamic Approaches to Connectivity Assessment

The conservation field is experiencing a rapid increase in the amount, variety, and quality of spatial data that can help us understand species movement and landscape connectivity patterns. As interest grows in more dynamic representations of movement potential, modelers are often limited by the capacity of their analytic tools to handle these datasets. Technology developments in software and high-performance computing are rapidly emerging in many fields, but uptake within conservation may lag, as our tools or our choice of computing language can constrain our ability to keep pace. We recently updated Circuitscape, a widely used connectivity analysis tool developed by Brad McRae and Viral Shah, by implementing it in Julia, a high-performance computing language. In this initial re-code (Circuitscape 5.0) and later updates, we improved computational efficiency and parallelism, achieving major speed improvements, and enabling assessments across larger extents or with higher resolution data. Here, we reflect on the benefits to conservation of strengthening collaborations with computer scientists, and extract examples from a collection of 572 Circuitscape applications to illustrate how through a decade of repeated investment in the software, applications have been many, varied, and increasingly dynamic. Beyond empowering continued innovations in dynamic connectivity, we expect that faster run times will play an important role in facilitating co-production of connectivity assessments with stakeholders, increasing the likelihood that connectivity science will be incorporated in land use decisions.