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Shi B, Geng Y, Wang H, Yang J, Shang C, Wang M, Mi S, Huang J, Pan F, Gui X, Wang J, Liu J, Xu D, Zhang H, Qin J, Wang H, Hao L, Tian M, Cheng Z, Zheng G, Cheng P. FePd 2Te 2: An Anisotropic Two-Dimensional Ferromagnet with One-Dimensional Fe Chains. J Am Chem Soc 2024. [PMID: 39048922 DOI: 10.1021/jacs.4c04910] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/27/2024]
Abstract
Two-dimensional (2D) magnets have attracted significant attention in recent years due to their importance in the research on both fundamental physics and spintronic applications. Here, we report the discovery of a new ternary compound FePd2Te2. It features a layered quasi-2D crystal structure with 1D Fe zigzag chains extending along the b-axis in the cleavage plane. Single crystals of FePd2Te2 with centimeter size could be grown. Density functional theory calculations, mechanical exfoliation, and atomic force microscopy on these crystals reveal that they are 2D materials that can be thinned down to ∼5 nm. Magnetic characterization shows that FePd2Te2 is an easy-plane ferromagnet with TC ∼ 183 K and strong in-plane uniaxial magnetic anisotropy. Magnetoresistance and the anomalous Hall effect demonstrate that ferromagnetism could be maintained in FePd2Te2 flakes with large coercivity. A crystal twinning effect is observed by scanning tunneling microscopy which makes the Fe chains right angle bent in the cleavage plane and creates an intriguing spin texture. Besides, a large electronic specific heat coefficient of up to γ ∼ 32.4 mJ mol-1 K-2 suggests FePd2Te2 is a strongly correlated metal. Our results show that FePd2Te2 is a correlated anisotropic 2D magnet that may attract multidisciplinary research interests.
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Affiliation(s)
- Bingxian Shi
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
- Laboratory for Neutron Scattering, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Yanyan Geng
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
| | - Hengning Wang
- Department of Physics, University of Science and Technology of China, Hefei 230031, Anhui, China
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui 230031, China
| | - Jianhui Yang
- Quzhou University, Quzhou, Zhejiang 32400, China
| | - Chenglin Shang
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
- Laboratory for Neutron Scattering, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Manyu Wang
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
| | - Shuo Mi
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
| | - Jiale Huang
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
- Laboratory for Neutron Scattering, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Feihao Pan
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
- Laboratory for Neutron Scattering, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Xuejuan Gui
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
- Laboratory for Neutron Scattering, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Jinchen Wang
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
- Laboratory for Neutron Scattering, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Juanjuan Liu
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
- Laboratory for Neutron Scattering, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Daye Xu
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
- Laboratory for Neutron Scattering, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Hongxia Zhang
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
- Laboratory for Neutron Scattering, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Jianfei Qin
- China Institute of Atomic Energy, PO Box 275-30, Beijing 102413, China
| | - Hongliang Wang
- China Institute of Atomic Energy, PO Box 275-30, Beijing 102413, China
| | - Lijie Hao
- China Institute of Atomic Energy, PO Box 275-30, Beijing 102413, China
| | - Mingliang Tian
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui 230031, China
| | - Zhihai Cheng
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
| | - Guolin Zheng
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui 230031, China
| | - Peng Cheng
- Department of Physics, Key Laboratory of Quantum State Construction and Manipulation, Ministry of Education, Renmin University of China, Beijing 100872, China
- Laboratory for Neutron Scattering, Department of Physics, Renmin University of China, Beijing 100872, China
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2
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Jang M, Lee S, Cantos-Prieto F, Košić I, Li Y, McCray ARC, Jung MH, Yoon JY, Boddapati L, Deepak FL, Jeong HY, Phatak CM, Santos EJG, Navarro-Moratalla E, Kim K. Direct observation of twisted stacking domains in the van der Waals magnet CrI 3. Nat Commun 2024; 15:5925. [PMID: 39009625 PMCID: PMC11251270 DOI: 10.1038/s41467-024-50314-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/02/2024] [Accepted: 07/08/2024] [Indexed: 07/17/2024] Open
Abstract
Van der Waals (vdW) stacking is a powerful technique to achieve desired properties in condensed matter systems through layer-by-layer crystal engineering. A remarkable example is the control over the twist angle between artificially-stacked vdW crystals, enabling the realization of unconventional phenomena in moiré structures ranging from superconductivity to strongly correlated magnetism. Here, we report the appearance of unusual 120° twisted faults in vdW magnet CrI3 crystals. In exfoliated samples, we observe vertical twisted domains with a thickness below 10 nm. The size and distribution of twisted domains strongly depend on the sample preparation methods, with as-synthesized unexfoliated samples showing tenfold thicker domains than exfoliated samples. Cooling induces changes in the relative populations among different twisting domains, rather than the previously assumed structural phase transition to the rhombohedral stacking. The stacking disorder induced by sample fabrication processes may explain the unresolved thickness-dependent magnetic coupling observed in CrI3.
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Grants
- 2017R1A5A1014862 National Research Foundation of Korea (NRF)
- 2022R1A2C4002559 National Research Foundation of Korea (NRF)
- Institute for Basic Science (IBS-R026-D1)
- F.C.P. acknowledges the MICINN for the FPU program (Grant No. FPU17/01587).
- Work at Argonne (to Y.L., A.R.C.M., C.M.P.) was funded by the US Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Science and Engineering Division. Use of the Center for Nanoscale Materials, an Office of Science user facility, was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.
- F.L.D. would like to acknowledge the funding received from the European Union, FUNLAYERS twinning project- 101079184.
- E.J.G.S. acknowledges computational resources through CIRRUS Tier-2 HPC Service (ec131 Cirrus Project) at EPCC (http://www.cirrus.ac.uk) funded by the University of Edinburgh and EPSRC (EP/P020267/1); ARCHER UK National Supercomputing Service (http://www.archer.ac.uk) via Project d429. E.J.G.S. also acknowledges the EPSRC Open Career Fellowship (EP/T021578/1).
- E.N.M. acknowledges the European Research Council (ERC) under the Horizon 2020 research and innovation program (ERC StG, grant agreement No. 803092) and to the Spanish Ministerio de Ciencia e Innovación (MICINN) for financial support from the Ramon y Cajal program (Grant No. RYC2018-024736-I) and the grant PID2020-118938GA-100. This work was also supported by the Spanish Unidad de Excelencia “María de Maeztu” (CEX2019-000919-M) and is part of the Advanced Materials programme supported by MICINN with funding from European Union NextGenerationEU (PRTR-C17.I1) and by Generalitat Valenciana.
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Affiliation(s)
- Myeongjin Jang
- Department of Physics, Yonsei University, Seoul, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul, Republic of Korea
| | - Sol Lee
- Department of Physics, Yonsei University, Seoul, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul, Republic of Korea
| | | | - Ivona Košić
- Instituto de Ciencia Molecular, Universitat de València, Paterna, Spain
| | - Yue Li
- Materials Science Division, Argonne National Laboratory, Lemont, IL, USA
| | - Arthur R C McCray
- Materials Science Division, Argonne National Laboratory, Lemont, IL, USA
- Applied Physics Program, Northwestern University, Evanston, IL, USA
| | - Min-Hyoung Jung
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, Republic of Korea
| | - Jun-Yeong Yoon
- Department of Physics, Yonsei University, Seoul, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul, Republic of Korea
| | - Loukya Boddapati
- Nanostructured Materials Group, International Iberian Nanotechnology Laboratory, Braga, Portugal
| | - Francis Leonard Deepak
- Nanostructured Materials Group, International Iberian Nanotechnology Laboratory, Braga, Portugal
| | - Hu Young Jeong
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea
- UNIST Central Research Facilities, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea
| | - Charudatta M Phatak
- Materials Science Division, Argonne National Laboratory, Lemont, IL, USA
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois, 60208, USA
| | - Elton J G Santos
- Institute for Condensed Matter Physics and Complex Systems, School of Physics and Astronomy, The University of Edinburgh, Edinburgh, UK.
- Higgs Centre for Theoretical Physics, The University of Edinburgh, Edinburgh, UK.
- Donostia International Physics Center (DIPC), Donostia-San Sebastián, Spain.
| | | | - Kwanpyo Kim
- Department of Physics, Yonsei University, Seoul, Republic of Korea.
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul, Republic of Korea.
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3
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Ding P, Yan J, Wang J, Han X, Yang W, Chen H, Zhang D, Huang M, Zhao J, Yang S, Xue TT, Liu L, Dai Y, Hou Y, Zhang S, Xu X, Wang Y, Huang Y. Manipulation of Moiré Superlattice in Twisted Monolayer-multilayer Graphene by Moving Nanobubbles. NANO LETTERS 2024; 24:8208-8215. [PMID: 38913825 DOI: 10.1021/acs.nanolett.4c02548] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/26/2024]
Abstract
In the heterostructure of two-dimensional (2D) materials, many novel physics phenomena are strongly dependent on the Moiré superlattice. How to achieve the continuous manipulation of the Moiré superlattice in the same sample is very important to study the evolution of various physical properties. Here, in minimally twisted monolayer-multilayer graphene, we found that bubble-induced strain has a huge impact on the Moiré superlattice. By employing the AFM tip to dynamically and continuously move the nanobubble, we realized the modulation of the Moiré superlattice, like the evolution of regular triangular domains into long strip domain structures with single or double domain walls. We also achieved controllable modulation of the Moiré superlattice by moving multiple nanobubbles and establishing the coupling of nanobubbles. Our work presents a flexible method for continuous and controllable manipulation of Moiré superlattices, which will be widely used to study novel physical properties in 2D heterostructures.
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Affiliation(s)
- Pengfei Ding
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Jiahao Yan
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Jiakai Wang
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Xu Han
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Wenchen Yang
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Hui Chen
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Decheng Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Mengting Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Jinghan Zhao
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Shiqi Yang
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Tong-Tong Xue
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Liwei Liu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Yunyun Dai
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Yuan Hou
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Shuai Zhang
- Applied Mechanics Laboratory, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China
| | - Xiaolong Xu
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
| | - Yeliang Wang
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
- BIT Chongqing Institute of Microelectronics and Microsystems, Chongqing 100190, China
| | - Yuan Huang
- School of Physics, School of Integrated Circuits and Electronics, Beijing Institute of Technology, Advanced Research Institute of Multidisciplinary Sciences, Beijing 100081, China
- BIT Chongqing Institute of Microelectronics and Microsystems, Chongqing 100190, China
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4
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Ziebel ME, Feuer ML, Cox J, Zhu X, Dean CR, Roy X. CrSBr: An Air-Stable, Two-Dimensional Magnetic Semiconductor. NANO LETTERS 2024; 24:4319-4329. [PMID: 38567828 DOI: 10.1021/acs.nanolett.4c00624] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/18/2024]
Abstract
The discovery of magnetic order at the 2D limit has sparked new exploration of van der Waals magnets for potential use in spintronics, magnonics, and quantum information applications. However, many of these materials feature low magnetic ordering temperatures and poor air stability, limiting their fabrication into practical devices. In this Mini-Review, we present a promising material for fundamental studies and functional use: CrSBr, an air-stable, two-dimensional magnetic semiconductor. Our discussion highlights experimental research on bulk CrSBr, including quasi-1D semiconducting properties, A-type antiferromagnetic order (TN = 132 K), and strong coupling between its electronic and magnetic properties. We then discuss the behavior of monolayer and few-layer flakes and present a perspective on promising avenues for further studies on CrSBr.
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Affiliation(s)
- Michael E Ziebel
- Columbia University, Department of Chemistry, New York, New York 10027, United States
| | - Margalit L Feuer
- Columbia University, Department of Chemistry, New York, New York 10027, United States
| | - Jordan Cox
- Columbia University, Department of Chemistry, New York, New York 10027, United States
| | - Xiaoyang Zhu
- Columbia University, Department of Chemistry, New York, New York 10027, United States
| | - Cory R Dean
- Columbia University, Department of Physics, New York, New York 10027, United States
| | - Xavier Roy
- Columbia University, Department of Chemistry, New York, New York 10027, United States
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5
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Jo J, Mañas-Valero S, Coronado E, Casanova F, Gobbi M, Hueso LE. Nonvolatile Electric Control of Antiferromagnet CrSBr. NANO LETTERS 2024; 24:4471-4477. [PMID: 38587318 DOI: 10.1021/acs.nanolett.4c00348] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/09/2024]
Abstract
van der Waals magnets are emerging as a promising material platform for electric field control of magnetism, offering a pathway toward the elimination of external magnetic fields from spintronic devices. A further step is the integration of such magnets with electrical gating components that would enable nonvolatile control of magnetic states. However, this approach remains unexplored for antiferromagnets, despite their growing significance in spintronics. Here, we demonstrate nonvolatile electric field control of magnetoelectric characteristics in van der Waals antiferromagnet CrSBr. We integrate a CrSBr channel in a flash-memory architecture featuring charge trapping graphene multilayers. The electrical gate operation triggers a nonvolatile 200% change in the antiferromagnetic state of CrSBr resistance by manipulating electron accumulation/depletion. Moreover, the nonvolatile gate modulates the metamagnetic transition field of CrSBr and the magnitude of magnetoresistance. Our findings highlight the potential of manipulating magnetic properties of antiferromagnetic semiconductors in a nonvolatile way.
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Affiliation(s)
- Junhyeon Jo
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastian, Basque Country, Spain
| | - Samuel Mañas-Valero
- Instituto de Ciencia Molecular (ICMol) Universitat de València, Catedrático José Beltrán 2, Paterna 46980, Spain
| | - Eugenio Coronado
- Instituto de Ciencia Molecular (ICMol) Universitat de València, Catedrático José Beltrán 2, Paterna 46980, Spain
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastian, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48013 Bilbao, Basque Country, Spain
| | - Marco Gobbi
- IKERBASQUE, Basque Foundation for Science, 48013 Bilbao, Basque Country, Spain
- Centro de Física de Materiales (CFM-MPC) Centro Mixto CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Luis E Hueso
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastian, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48013 Bilbao, Basque Country, Spain
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6
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Meineke C, Schlosser J, Zizlsperger M, Liebich M, Nilforoushan N, Mosina K, Terres S, Chernikov A, Sofer Z, Huber MA, Florian M, Kira M, Dirnberger F, Huber R. Ultrafast Exciton Dynamics in the Atomically Thin van der Waals Magnet CrSBr. NANO LETTERS 2024; 24:4101-4107. [PMID: 38507732 PMCID: PMC11010225 DOI: 10.1021/acs.nanolett.3c05010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2023] [Revised: 03/08/2024] [Accepted: 03/11/2024] [Indexed: 03/22/2024]
Abstract
Among atomically thin semiconductors, CrSBr stands out as both its bulk and monolayer forms host tightly bound, quasi-one-dimensional excitons in a magnetic environment. Despite its pivotal importance for solid-state research, the exciton lifetime has remained unknown. While terahertz polarization probing can directly trace all excitons, independently of interband selection rules, the corresponding large far-field foci substantially exceed the lateral sample dimensions. Here, we combine terahertz polarization spectroscopy with near-field microscopy to reveal a femtosecond decay of paramagnetic excitons in a monolayer of CrSBr, which is 30 times shorter than the bulk lifetime. We unveil low-energy fingerprints of bound and unbound electron-hole pairs in bulk CrSBr and extract the nonequilibrium dielectric function of the monolayer in a model-free manner. Our results demonstrate the first direct access to the ultrafast dielectric response of quasi-one-dimensional excitons in CrSBr, potentially advancing the development of quantum devices based on ultrathin van der Waals magnets.
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Affiliation(s)
- Christian Meineke
- Department
of Physics and Regensburg Center for Ultrafast Nanoscopy (RUN), University of Regensburg, 93040 Regensburg, Germany
| | - Jakob Schlosser
- Department
of Physics and Regensburg Center for Ultrafast Nanoscopy (RUN), University of Regensburg, 93040 Regensburg, Germany
| | - Martin Zizlsperger
- Department
of Physics and Regensburg Center for Ultrafast Nanoscopy (RUN), University of Regensburg, 93040 Regensburg, Germany
| | - Marlene Liebich
- Department
of Physics and Regensburg Center for Ultrafast Nanoscopy (RUN), University of Regensburg, 93040 Regensburg, Germany
| | - Niloufar Nilforoushan
- Department
of Physics and Regensburg Center for Ultrafast Nanoscopy (RUN), University of Regensburg, 93040 Regensburg, Germany
| | - Kseniia Mosina
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, 166 28 Prague 6, Czech Republic
| | - Sophia Terres
- Institute
of Applied Physics and Würzburg-Dresden Cluster of Excellence, Dresden University of Technology, 01187 Dresden, Germany
| | - Alexey Chernikov
- Institute
of Applied Physics and Würzburg-Dresden Cluster of Excellence, Dresden University of Technology, 01187 Dresden, Germany
| | - Zdenek Sofer
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, 166 28 Prague 6, Czech Republic
| | - Markus A. Huber
- Department
of Physics and Regensburg Center for Ultrafast Nanoscopy (RUN), University of Regensburg, 93040 Regensburg, Germany
| | - Matthias Florian
- Department
of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Mackillo Kira
- Department
of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Florian Dirnberger
- Institute
of Applied Physics and Würzburg-Dresden Cluster of Excellence, Dresden University of Technology, 01187 Dresden, Germany
| | - Rupert Huber
- Department
of Physics and Regensburg Center for Ultrafast Nanoscopy (RUN), University of Regensburg, 93040 Regensburg, Germany
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7
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Moon A, Li Y, McKeever C, Casas BW, Bravo M, Zheng W, Macy J, Petford-Long AK, McCandless GT, Chan JY, Phatak C, Santos EJG, Balicas L. Writing and Detecting Topological Charges in Exfoliated Fe 5-xGeTe 2. ACS NANO 2024; 18:4216-4228. [PMID: 38262067 DOI: 10.1021/acsnano.3c09234] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/25/2024]
Abstract
Fe5-xGeTe2 is a promising two-dimensional (2D) van der Waals (vdW) magnet for practical applications, given its magnetic properties. These include Curie temperatures above room temperature, and topological spin textures─TST (both merons and skyrmions), responsible for a pronounced anomalous Hall effect (AHE) and its topological counterpart (THE), which can be harvested for spintronics. Here, we show that both the AHE and THE can be amplified considerably by just adjusting the thickness of exfoliated Fe5-xGeTe2, with THE becoming observable even in zero magnetic field due to a field-induced unbalance in topological charges. Using a complementary suite of techniques, including electronic transport, Lorentz transmission electron microscopy, and micromagnetic simulations, we reveal the emergence of substantial coercive fields upon exfoliation, which are absent in the bulk, implying thickness-dependent magnetic interactions that affect the TST. We detected a "magic" thickness t ≈ 30 nm where the formation of TST is maximized, inducing large magnitudes for the topological charge density (∼6.45 × 1020 cm-2), and the concomitant anomalous (ρxyA,max ≃22.6 μΩ cm) and topological (ρxyu,T 1≃5 μΩ cm) Hall resistivities at T ≈ 120 K. These values for ρxyA,max and ρxyu,T are higher than those found in magnetic topological insulators and, so far, the largest reported for 2D magnets. The hitherto unobserved THE under zero magnetic field could provide a platform for the writing and electrical detection of TST aiming at energy-efficient devices based on vdW ferromagnets.
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Affiliation(s)
- Alex Moon
- National High Magnetic Field Laboratory, 1800 E. Paul Dirac Dr., Tallahassee, Florida 32310, United States
- Department of Physics, Florida State University, 77 Chieftan Way, Tallahassee, Florida 32306, United States
| | - Yue Li
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Conor McKeever
- Institute for Condensed Matter and Complex Systems, School of Physics and Astronomy, The University of Edinburgh, Edinburgh EH9 3FD, U.K
| | - Brian W Casas
- National High Magnetic Field Laboratory, 1800 E. Paul Dirac Dr., Tallahassee, Florida 32310, United States
| | - Moises Bravo
- Department of Chemistry and Biochemistry, Baylor University, Waco, Texas 76798, United States
| | - Wenkai Zheng
- National High Magnetic Field Laboratory, 1800 E. Paul Dirac Dr., Tallahassee, Florida 32310, United States
- Department of Physics, Florida State University, 77 Chieftan Way, Tallahassee, Florida 32306, United States
| | - Juan Macy
- National High Magnetic Field Laboratory, 1800 E. Paul Dirac Dr., Tallahassee, Florida 32310, United States
- Department of Physics, Florida State University, 77 Chieftan Way, Tallahassee, Florida 32306, United States
| | - Amanda K Petford-Long
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Gregory T McCandless
- Department of Chemistry and Biochemistry, Baylor University, Waco, Texas 76798, United States
| | - Julia Y Chan
- Department of Chemistry and Biochemistry, Baylor University, Waco, Texas 76798, United States
| | - Charudatta Phatak
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Elton J G Santos
- Institute for Condensed Matter and Complex Systems, School of Physics and Astronomy, The University of Edinburgh, Edinburgh EH9 3FD, U.K
- Higgs Centre for Theoretical Physics, The University of Edinburgh, Edinburgh EH9 3FD, U.K
| | - Luis Balicas
- National High Magnetic Field Laboratory, 1800 E. Paul Dirac Dr., Tallahassee, Florida 32310, United States
- Department of Physics, Florida State University, 77 Chieftan Way, Tallahassee, Florida 32306, United States
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8
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Wang L. Beyond moiré in twisted two-dimensional magnets. NATURE MATERIALS 2024; 23:174-175. [PMID: 38123816 DOI: 10.1038/s41563-023-01762-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/23/2023]
Affiliation(s)
- Lan Wang
- Hefei University of Technology, Hefei, China.
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