1
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Zhang Y, Guan H, Sheng T, Chen R, Rogge S, Du J, Yin C. Fast Thermodynamic Study on a Silicon Nanotransistor at Cryogenic Temperatures. NANO LETTERS 2024; 24:8859-8865. [PMID: 38981024 DOI: 10.1021/acs.nanolett.4c01424] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/11/2024]
Abstract
Cryogenic temperatures are crucial for the operation of semiconductor quantum electronic devices, yet the heating effects induced by microwave or laser signals used for quantum state manipulation can lead to significant temperature variations at the nanoscale. Therefore, probing the temperature of individual devices in working conditions and understanding the thermodynamics are paramount for designing and operating large-scale quantum computing systems. In this study, we demonstrate high-sensitivity fast thermometry in a silicon nanotransistor at cryogenic temperatures using RF reflectometry. Through this method, we explore the thermodynamic processes of the nanotransistor during and after a laser pulse and determine the dominant heat dissipation channels in the few-kelvin temperature range. These insights are important to understand thermal budgets in quantum circuits, with our techniques being compatible with microwave and laser radiation, offering a versatile approach for studying other quantum electronic devices in working conditions.
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Affiliation(s)
- Yangbo Zhang
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Hao Guan
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Tingfeng Sheng
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Ruiwen Chen
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Sven Rogge
- Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, NSW 2052, Australia
| | - Jiangfeng Du
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Chunming Yin
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
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2
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Fauseweh B. Quantum many-body simulations on digital quantum computers: State-of-the-art and future challenges. Nat Commun 2024; 15:2123. [PMID: 38459040 PMCID: PMC10923891 DOI: 10.1038/s41467-024-46402-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2023] [Accepted: 02/14/2024] [Indexed: 03/10/2024] Open
Abstract
Simulating quantum many-body systems is a key application for emerging quantum processors. While analog quantum simulation has already demonstrated quantum advantage, its digital counterpart has recently become the focus of intense research interest due to the availability of devices that aim to realize general-purpose quantum computers. In this perspective, we give a selective overview of the currently pursued approaches, review the advances in digital quantum simulation by comparing non-variational with variational approaches and identify hardware and algorithmic challenges. Based on this review, the question arises: What are the most promising problems that can be tackled with digital quantum simulation? We argue that problems of a qualitative nature are much more suitable for near-term devices then approaches aiming purely for a quantitative accuracy improvement.
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Affiliation(s)
- Benedikt Fauseweh
- Institute for Software Technology, German Aerospace Center (DLR), Linder Höhe, 51147, Cologne, Germany.
- Department of Physics, TU Dortmund University, Otto-Hahn-Str. 4, 44227, Dortmund, Germany.
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3
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de Jong D, Prosko CG, Han L, Malinowski FK, Liu Y, Kouwenhoven LP, Pfaff W. Controllable Single Cooper Pair Splitting in Hybrid Quantum Dot Systems. PHYSICAL REVIEW LETTERS 2023; 131:157001. [PMID: 37897758 DOI: 10.1103/physrevlett.131.157001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Accepted: 09/07/2023] [Indexed: 10/30/2023]
Abstract
Cooper pair splitters hold utility as a platform for investigating the entanglement of electrons in Cooper pairs, but probing splitters with voltage-biased Ohmic contacts prevents the retention of electrons from split pairs since they can escape to the drain reservoirs. We report the ability to controllably split and retain single Cooper pairs in a multi-quantum-dot device isolated from lead reservoirs, and separately demonstrate a technique for detecting the electrons emerging from a split pair. First, we identify a coherent Cooper pair splitting charge transition using dispersive gate sensing at GHz frequencies. Second, we utilize a double quantum dot as an electron parity sensor to detect parity changes resulting from electrons emerging from a superconducting island.
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Affiliation(s)
- Damaz de Jong
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, Netherlands
| | - Christian G Prosko
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, Netherlands
| | - Lin Han
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, Netherlands
| | - Filip K Malinowski
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, Netherlands
| | - Yu Liu
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Leo P Kouwenhoven
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, Netherlands
| | - Wolfgang Pfaff
- Department of Physics and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
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4
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Secchi A, Troiani F. Multi-Dimensional Quantum Capacitance of the Two-Site Hubbard Model: The Role of Tunable Interdot Tunneling. ENTROPY (BASEL, SWITZERLAND) 2022; 25:82. [PMID: 36673222 PMCID: PMC9857432 DOI: 10.3390/e25010082] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/29/2022] [Revised: 12/19/2022] [Accepted: 12/27/2022] [Indexed: 06/17/2023]
Abstract
Few-electron states confined in quantum-dot arrays are key objects in quantum computing. The discrimination between these states is essential for the readout of a (multi-)qubit state, and can be achieved through a measurement of the quantum capacitance within the gate-reflectometry approach. For a system controlled by several gates, the dependence of the measured capacitance on the direction of the oscillations in the voltage space is captured by the quantum capacitance matrix. Herein, we apply this tool to study a double quantum dot coupled to three gates, which enable the tuning of both the bias and the tunneling between the two dots. Analytical solutions for the two-electron case are derived within a Hubbard model, showing the overall dependence of the quantum capacitance matrix on the applied gate voltages. In particular, we investigate the role of the tunneling gate and reveal the possibility of exploiting interdot coherences in addition to charge displacements between the dots. Our results can be directly applied to double-dot experimental setups, and pave the way for further applications to larger arrays of quantum dots.
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5
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Yadav P, Chakraborty S, Moraru D, Samanta A. Variable-Barrier Quantum Coulomb Blockade Effect in Nanoscale Transistors. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:4437. [PMID: 36558290 PMCID: PMC9786079 DOI: 10.3390/nano12244437] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/18/2022] [Revised: 12/06/2022] [Accepted: 12/09/2022] [Indexed: 06/17/2023]
Abstract
Current-voltage characteristics of a quantum dot in double-barrier configuration, as formed in the nanoscale channel of silicon transistors, were analyzed both experimentally and theoretically. Single electron transistors (SET) made in a SOI-FET configuration using silicon quantum dot as well as phosphorus donor quantum dots were experimentally investigated. These devices exhibited a quantum Coulomb blockade phenomenon along with a detectable effect of variable tunnel barriers. To replicate the experimental results, we developed a generalized formalism for the tunnel-barrier dependent quantum Coulomb blockade by modifying the rate-equation approach. We qualitatively replicate the experimental results with numerical calculation using this formalism for two and three energy levels participated in the tunneling transport. The new formalism supports the features of most of the small-scaled SET devices.
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Affiliation(s)
- Pooja Yadav
- Quantum/Nano-Science and Technology Lab, Department of Physics, Indian Institute of Technology Roorkee, Roorkee 247667, India
| | - Soumya Chakraborty
- Quantum/Nano-Science and Technology Lab, Department of Physics, Indian Institute of Technology Roorkee, Roorkee 247667, India
| | - Daniel Moraru
- Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
| | - Arup Samanta
- Quantum/Nano-Science and Technology Lab, Department of Physics, Indian Institute of Technology Roorkee, Roorkee 247667, India
- Centre of Nanotechnology, Indian Institute of Technology Roorkee, Roorkee 247667, India
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6
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Keith D, Chung Y, Kranz L, Thorgrimsson B, Gorman SK, Simmons MY. Ramped measurement technique for robust high-fidelity spin qubit readout. SCIENCE ADVANCES 2022; 8:eabq0455. [PMID: 36070386 PMCID: PMC9451149 DOI: 10.1126/sciadv.abq0455] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/17/2022] [Accepted: 07/21/2022] [Indexed: 06/15/2023]
Abstract
State preparation and measurement of single-electron spin qubits typically rely on spin-to-charge conversion where a spin-dependent charge transition of the electron is detected by a coupled charge sensor. For high-fidelity, fast readout, this process requires that the qubit energy is much larger than the temperature of the system limiting the temperature range for measurements. Here, we demonstrate an initialization and measurement technique that involves voltage ramps rather than static voltages allowing us to achieve state-to-charge readout fidelities above 99% for qubit energies almost half that required by traditional methods. This previously unidentified measurement technique is highly relevant for achieving high-fidelity electron spin readout at higher temperature operation and offers a number of pragmatic benefits compared to traditional energy-selective readout such as real-time dynamic feedback and minimal alignment procedures.
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7
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Cochrane L, Lundberg T, Ibberson DJ, Ibberson LA, Hutin L, Bertrand B, Stelmashenko N, Robinson JWA, Vinet M, Seshia AA, Gonzalez-Zalba MF. Parametric Amplifiers Based on Quantum Dots. PHYSICAL REVIEW LETTERS 2022; 128:197701. [PMID: 35622052 DOI: 10.1103/physrevlett.128.197701] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2021] [Accepted: 03/30/2022] [Indexed: 06/15/2023]
Abstract
Josephson parametric amplifiers (JPAs) approaching quantum-limited noise performance have been instrumental in enabling high fidelity readout of superconducting qubits and, recently, semiconductor quantum dots (QDs). We propose that the quantum capacitance arising in electronic two-level systems (the dual of Josephson inductance) can provide an alternative dissipationless nonlinear element for parametric amplification. We experimentally demonstrate phase-sensitive parametric amplification using a QD-reservoir electron transition in a CMOS nanowire split-gate transistor embedded in a 1.8 GHz superconducting lumped-element microwave cavity, achieving parametric gains of -3 to +3 dB, limited by Sisyphus dissipation. Using a semiclassical model, we find an optimized design within current technological capabilities could achieve gains and bandwidths comparable to JPAs, while providing complementary specifications with respect to integration in semiconductor platforms or operation at higher magnetic fields.
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Affiliation(s)
- Laurence Cochrane
- Nanoscience Centre, Department of Engineering, University of Cambridge, Cambridge CB3 0FF, United Kingdom
- Quantum Motion Technologies, Windsor House, Cornwall Road, Harrogate HG1 2PW, United Kingdom
| | - Theodor Lundberg
- Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
- Hitachi Cambridge Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - David J Ibberson
- Quantum Motion Technologies, Windsor House, Cornwall Road, Harrogate HG1 2PW, United Kingdom
| | - Lisa A Ibberson
- Hitachi Cambridge Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Louis Hutin
- CEA/LETI-MINATEC, CEA-Grenoble, 38000 Grenoble, France
| | | | - Nadia Stelmashenko
- Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - Jason W A Robinson
- Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - Maud Vinet
- CEA/LETI-MINATEC, CEA-Grenoble, 38000 Grenoble, France
| | - Ashwin A Seshia
- Nanoscience Centre, Department of Engineering, University of Cambridge, Cambridge CB3 0FF, United Kingdom
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8
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Connors EJ, Nelson J, Edge LF, Nichol JM. Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations. Nat Commun 2022; 13:940. [PMID: 35177606 PMCID: PMC8854405 DOI: 10.1038/s41467-022-28519-x] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/08/2021] [Accepted: 01/26/2022] [Indexed: 11/23/2022] Open
Abstract
Electron spins in silicon quantum dots are promising qubits due to their long coherence times, scalable fabrication, and potential for all-electrical control. However, charge noise in the host semiconductor presents a major obstacle to achieving high-fidelity single- and two-qubit gates in these devices. In this work, we measure the charge-noise spectrum of a Si/SiGe singlet-triplet qubit over nearly 12 decades in frequency using a combination of methods, including dynamically-decoupled exchange oscillations with up to 512 π pulses during the qubit evolution. The charge noise is colored across the entire frequency range of our measurements, although the spectral exponent changes with frequency. Moreover, the charge-noise spectrum inferred from conductance measurements of a proximal sensor quantum dot agrees with that inferred from coherent oscillations of the singlet-triplet qubit, suggesting that simple transport measurements can accurately characterize the charge noise over a wide frequency range in Si/SiGe quantum dots.
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Affiliation(s)
- Elliot J Connors
- Department of Physics and Astronomy, University of Rochester, Rochester, NY, 14627, USA
| | - J Nelson
- Department of Physics and Astronomy, University of Rochester, Rochester, NY, 14627, USA
| | - Lisa F Edge
- HRL Laboratories LLC, 3011 Malibu Canyon Road, Malibu, CA, 90265, USA
| | - John M Nichol
- Department of Physics and Astronomy, University of Rochester, Rochester, NY, 14627, USA.
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9
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Nikandish R, Blokhina E, Leipold D, Staszewski RB. Semiconductor Quantum Computing: Toward a CMOS quantum computer on chip. IEEE NANOTECHNOLOGY MAGAZINE 2021. [DOI: 10.1109/mnano.2021.3113216] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
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10
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Abstract
The spin of a single electron in a semiconductor quantum dot provides a well-controlled and long-lived qubit implementation. The electron charge in turn allows control of the position of individual electrons in a quantum dot array, and enables charge sensors to probe the charge configuration. Here we show that the Coulomb repulsion allows an initial charge transition to induce subsequent charge transitions, inducing a cascade of electron hops, like toppling dominoes. A cascade can transmit information along a quantum dot array over a distance that extends by far the effect of the direct Coulomb repulsion. We demonstrate that a cascade of electrons can be combined with Pauli spin blockade to read out distant spins and show results with potential for high fidelity using a remote charge sensor in a quadruple quantum dot device. We implement and analyse several operating modes for cascades and analyse their scaling behaviour. We also discuss the application of cascade-based spin readout to densely-packed two-dimensional quantum dot arrays with charge sensors placed at the periphery. The high connectivity of such arrays greatly improves the capabilities of quantum dot systems for quantum computation and simulation. Readout of remote spins in quantum dot arrays is a challenge for future quantum computing architectures. Here, the authors implement electron cascade for spin readout on quantum dots far away from a charge sensor in a quadruple quantum dot device and discuss its applicability to large-scale arrays.
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11
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Bardin JC, Slichter DH, Reilly DJ. Microwaves in Quantum Computing. IEEE JOURNAL OF MICROWAVES 2021; 1:10.1109/JMW.2020.3034071. [PMID: 34355217 PMCID: PMC8335598 DOI: 10.1109/jmw.2020.3034071] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Abstract
Quantum information processing systems rely on a broad range of microwave technologies and have spurred development of microwave devices and methods in new operating regimes. Here we review the use of microwave signals and systems in quantum computing, with specific reference to three leading quantum computing platforms: trapped atomic ion qubits, spin qubits in semiconductors, and superconducting qubits. We highlight some key results and progress in quantum computing achieved through the use of microwave systems, and discuss how quantum computing applications have pushed the frontiers of microwave technology in some areas. We also describe open microwave engineering challenges for the construction of large-scale, fault-tolerant quantum computers.
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Affiliation(s)
- Joseph C Bardin
- Department of Electrical and Computer Engineering, University of Massachusetts Amherst, Amherst, MA 01003 USA
- Google LLC, Goleta, CA 93117 USA
| | - Daniel H Slichter
- Time and Frequency Division, National Institute of Standards and Technology, Boulder, CO 80305 USA
| | - David J Reilly
- Microsoft Inc., Microsoft Quantum Sydney, The University of Sydney, Sydney, NSW 2050, Australia
- ARC Centre of Excellence for Engineered Quantum Systems (EQuS), School of Physics, The University of Sydney, Sydney, NSW 2050, Australia
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12
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Szyniszewski M, Romito A, Schomerus H. Universality of Entanglement Transitions from Stroboscopic to Continuous Measurements. PHYSICAL REVIEW LETTERS 2020; 125:210602. [PMID: 33275018 DOI: 10.1103/physrevlett.125.210602] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2020] [Revised: 08/14/2020] [Accepted: 10/22/2020] [Indexed: 06/12/2023]
Abstract
Measurement-driven transitions between extensive and subextensive scaling of the entanglement entropy receive interest as they illuminate the intricate physics of thermalization and control in open interacting quantum systems. While this transition is well established for stroboscopic measurements in random quantum circuits, a crucial link to physical settings is its extension to continuous observations, where for an integrable model it has been shown that the transition changes its nature and becomes immediate. Here, we demonstrate that the entanglement transition at finite coupling persists if the continuously measured system is randomly nonintegrable, and show that it is smoothly connected to the transition in the stroboscopic models. This provides a bridge between a wide range of experimental settings and the wealth of knowledge accumulated for the latter systems.
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Affiliation(s)
- M Szyniszewski
- Department of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom
- Department of Physics and Astronomy, University College London, London WC1E 6BT, United Kingdom
| | - A Romito
- Department of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom
| | - H Schomerus
- Department of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom
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13
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Ghirri A, Cornia S, Affronte M. Microwave Photon Detectors Based on Semiconducting Double Quantum Dots. SENSORS (BASEL, SWITZERLAND) 2020; 20:s20144010. [PMID: 32707648 PMCID: PMC7412044 DOI: 10.3390/s20144010] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2020] [Revised: 07/01/2020] [Accepted: 07/15/2020] [Indexed: 05/14/2023]
Abstract
Detectors of microwave photons find applications in different fields ranging from security to cosmology. Due to the intrinsic difficulties related to the detection of vanishingly small energy quanta ℏ ω , significant portions of the microwave electromagnetic spectrum are still uncovered by suitable techniques. No prevailing technology has clearly emerged yet, although different solutions have been tested in different contexts. Here, we focus on semiconductor quantum dots, which feature wide tunability by external gate voltages and scalability for large architectures. We discuss possible pathways for the development of microwave photon detectors based on photon-assisted tunneling in semiconducting double quantum dot circuits. In particular, we consider implementations based on either broadband transmission lines or resonant cavities, and we discuss how developments in charge sensing techniques and hybrid architectures may be beneficial for the development of efficient photon detectors in the microwave range.
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Affiliation(s)
- Alberto Ghirri
- Istituto Nanoscienze-CNR, via Campi 213/a, 41125 Modena, Italy; (S.C.); (M.A.)
- Correspondence:
| | - Samuele Cornia
- Istituto Nanoscienze-CNR, via Campi 213/a, 41125 Modena, Italy; (S.C.); (M.A.)
- Dipartimento di Scienze Fisiche, Informatiche e Matematiche, Università di Modena e Reggio Emilia, via Campi 213/a, 41125 Modena, Italy
| | - Marco Affronte
- Istituto Nanoscienze-CNR, via Campi 213/a, 41125 Modena, Italy; (S.C.); (M.A.)
- Dipartimento di Scienze Fisiche, Informatiche e Matematiche, Università di Modena e Reggio Emilia, via Campi 213/a, 41125 Modena, Italy
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14
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Abstract
Among the different platforms for quantum information processing, individual electron spins in semiconductor quantum dots stand out for their long coherence times and potential for scalable fabrication. The past years have witnessed substantial progress in the capabilities of spin qubits. However, coupling between distant electron spins, which is required for quantum error correction, presents a challenge, and this goal remains the focus of intense research. Quantum teleportation is a canonical method to transmit qubit states, but it has not been implemented in quantum-dot spin qubits. Here, we present evidence for quantum teleportation of electron spin qubits in semiconductor quantum dots. Although we have not performed quantum state tomography to definitively assess the teleportation fidelity, our data are consistent with conditional teleportation of spin eigenstates, entanglement swapping, and gate teleportation. Such evidence for all-matter spin-state teleportation underscores the capabilities of exchange-coupled spin qubits for quantum-information transfer. Despite recent demonstrations of coherent spin-state transfer in arrays of spin qubits via exchange interaction, all-matter spin-state teleportation is still out of reach. Here the authors provide evidence for conditional teleportation of quantum-dot spin states, entanglement swapping, and gate teleportation.
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15
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Operation of a silicon quantum processor unit cell above one kelvin. Nature 2020; 580:350-354. [PMID: 32296190 DOI: 10.1038/s41586-020-2171-6] [Citation(s) in RCA: 46] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/19/2019] [Accepted: 01/22/2020] [Indexed: 11/08/2022]
Abstract
Quantum computers are expected to outperform conventional computers in several important applications, from molecular simulation to search algorithms, once they can be scaled up to large numbers-typically millions-of quantum bits (qubits)1-3. For most solid-state qubit technologies-for example, those using superconducting circuits or semiconductor spins-scaling poses a considerable challenge because every additional qubit increases the heat generated, whereas the cooling power of dilution refrigerators is severely limited at their operating temperature (less than 100 millikelvin)4-6. Here we demonstrate the operation of a scalable silicon quantum processor unit cell comprising two qubits confined to quantum dots at about 1.5 kelvin. We achieve this by isolating the quantum dots from the electron reservoir, and then initializing and reading the qubits solely via tunnelling of electrons between the two quantum dots7-9. We coherently control the qubits using electrically driven spin resonance10,11 in isotopically enriched silicon12 28Si, attaining single-qubit gate fidelities of 98.6 per cent and a coherence time of 2 microseconds during 'hot' operation, comparable to those of spin qubits in natural silicon at millikelvin temperatures13-16. Furthermore, we show that the unit cell can be operated at magnetic fields as low as 0.1 tesla, corresponding to a qubit control frequency of 3.5 gigahertz, where the qubit energy is well below the thermal energy. The unit cell constitutes the core building block of a full-scale silicon quantum computer and satisfies layout constraints required by error-correction architectures8,17. Our work indicates that a spin-based quantum computer could be operated at increased temperatures in a simple pumped 4He system (which provides cooling power orders of magnitude higher than that of dilution refrigerators), thus potentially enabling the integration of classical control electronics with the qubit array18,19.
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16
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Schaal S, Ahmed I, Haigh JA, Hutin L, Bertrand B, Barraud S, Vinet M, Lee CM, Stelmashenko N, Robinson JWA, Qiu JY, Hacohen-Gourgy S, Siddiqi I, Gonzalez-Zalba MF, Morton JJL. Fast Gate-Based Readout of Silicon Quantum Dots Using Josephson Parametric Amplification. PHYSICAL REVIEW LETTERS 2020; 124:067701. [PMID: 32109120 DOI: 10.1103/physrevlett.124.067701] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/23/2019] [Accepted: 01/17/2020] [Indexed: 06/10/2023]
Abstract
Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers a compact and scalable readout with high fidelity, however, further improvements in sensitivity are required to meet the fidelity thresholds and measurement timescales needed for the implementation of fast feedback in error correction protocols. Here, we combine radio-frequency gate-based sensing at 622 MHz with a Josephson parametric amplifier, that operates in the 500-800 MHz band, to reduce the integration time required to read the state of a silicon double quantum dot formed in a nanowire transistor. Based on our achieved signal-to-noise ratio, we estimate that singlet-triplet single-shot readout with an average fidelity of 99.7% could be performed in 1 μs, well below the requirements for fault-tolerant readout and 30 times faster than without the Josephson parametric amplifier. Additionally, the Josephson parametric amplifier allows operation at a lower radio-frequency power while maintaining identical signal-to-noise ratio. We determine a noise temperature of 200 mK with a contribution from the Josephson parametric amplifier (25%), cryogenic amplifier (25%) and the resonator (50%), showing routes to further increase the readout speed.
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Affiliation(s)
- S Schaal
- London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom
| | - I Ahmed
- Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - J A Haigh
- Hitachi Cambridge Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - L Hutin
- CEA, LETI, Minatec Campus, F-38054 Grenoble, France
| | - B Bertrand
- CEA, LETI, Minatec Campus, F-38054 Grenoble, France
| | - S Barraud
- CEA, LETI, Minatec Campus, F-38054 Grenoble, France
| | - M Vinet
- CEA, LETI, Minatec Campus, F-38054 Grenoble, France
| | - C-M Lee
- Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - N Stelmashenko
- Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - J W A Robinson
- Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - J Y Qiu
- Quantum Nanoelectronics Laboratory, Department of Physics, University of California, Berkeley California 94720, USA
| | - S Hacohen-Gourgy
- Quantum Nanoelectronics Laboratory, Department of Physics, University of California, Berkeley California 94720, USA
| | - I Siddiqi
- Quantum Nanoelectronics Laboratory, Department of Physics, University of California, Berkeley California 94720, USA
| | - M F Gonzalez-Zalba
- Hitachi Cambridge Laboratory, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - J J L Morton
- London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom
- Department of Electronic & Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
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17
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Noiri A, Takeda K, Yoneda J, Nakajima T, Kodera T, Tarucha S. Radio-Frequency-Detected Fast Charge Sensing in Undoped Silicon Quantum Dots. NANO LETTERS 2020; 20:947-952. [PMID: 31944116 DOI: 10.1021/acs.nanolett.9b03847] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Spin qubits in silicon quantum dots offer a promising platform for a quantum computer as they have a long coherence time and scalability. The charge sensing technique plays an essential role in reading out the spin qubit as well as tuning the device parameters, and therefore, its performance in terms of measurement bandwidth and sensitivity is an important factor in spin qubit experiments. Here we demonstrate fast and sensitive charge sensing by radio frequency reflectometry of an undoped, accumulation-mode Si/SiGe double quantum dot. We show that the large parasitic capacitance in typical accumulation-mode gate geometries impedes reflectometry measurements. We present a gate geometry that significantly reduces the parasitic capacitance and enables fast single-shot readout. The technique allows us to distinguish between the singly- and doubly occupied two-electron states under the Pauli spin blockade condition in an integration time of 0.8 μs, the shortest value ever reported in silicon, by the signal-to-noise ratio of 6. These results provide a guideline for designing silicon spin qubit devices suitable for the fast and high-fidelity readout.
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Affiliation(s)
- Akito Noiri
- RIKEN , Center for Emergent Matter Science (CEMS) , Wako-shi , Saitama 351-0198 , Japan
| | - Kenta Takeda
- RIKEN , Center for Emergent Matter Science (CEMS) , Wako-shi , Saitama 351-0198 , Japan
| | - Jun Yoneda
- RIKEN , Center for Emergent Matter Science (CEMS) , Wako-shi , Saitama 351-0198 , Japan
| | - Takashi Nakajima
- RIKEN , Center for Emergent Matter Science (CEMS) , Wako-shi , Saitama 351-0198 , Japan
| | - Tetsuo Kodera
- Department of Electrical and Electronic Engineering , Tokyo Institute of Technology , O-okayama , Meguro-ku, Tokyo 152-8552 , Japan
| | - Seigo Tarucha
- RIKEN , Center for Emergent Matter Science (CEMS) , Wako-shi , Saitama 351-0198 , Japan
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18
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Zhao R, Tanttu T, Tan KY, Hensen B, Chan KW, Hwang JCC, Leon RCC, Yang CH, Gilbert W, Hudson FE, Itoh KM, Kiselev AA, Ladd TD, Morello A, Laucht A, Dzurak AS. Single-spin qubits in isotopically enriched silicon at low magnetic field. Nat Commun 2019; 10:5500. [PMID: 31796728 PMCID: PMC6890755 DOI: 10.1038/s41467-019-13416-7] [Citation(s) in RCA: 26] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2019] [Accepted: 11/06/2019] [Indexed: 11/09/2022] Open
Abstract
Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave engineering for coherent spin resonance control, which limits the prospects for large scale multi-qubit systems. Alternatively, singlet-triplet readout enables high-fidelity spin-state measurements in much lower magnetic fields, without the need for reservoirs. Here, we demonstrate low-field operation of metal-oxide-silicon quantum dot qubits by combining coherent single-spin control with high-fidelity, single-shot, Pauli-spin-blockade-based ST readout. We discover that the qubits decohere faster at low magnetic fields with [Formula: see text] μs and [Formula: see text] μs at 150 mT. Their coherence is limited by spin flips of residual 29Si nuclei in the isotopically enriched 28Si host material, which occur more frequently at lower fields. Our finding indicates that new trade-offs will be required to ensure the frequency stabilization of spin qubits, and highlights the importance of isotopic enrichment of device substrates for the realization of a scalable silicon-based quantum processor.
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Affiliation(s)
- R Zhao
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, NSW, 2052, Australia.
- National Institute of Standards and Technology, 325 Broadway, Boulder, CO, 80305, USA.
| | - T Tanttu
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, NSW, 2052, Australia
| | - K Y Tan
- QCD Labs, QTF Centre of Excellence, Department of Applied Physics, Aalto University, 00076, Aalto, Finland
- IQM Finland Oy, Vaisalantie 6 C, 02130, Espoo, Finland
| | - B Hensen
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, NSW, 2052, Australia
| | - K W Chan
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, NSW, 2052, Australia
| | - J C C Hwang
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, NSW, 2052, Australia
- Research and Prototype Foundry, The University of Sydney, Sydney, NSW, 2006, Australia
| | - R C C Leon
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, NSW, 2052, Australia
| | - C H Yang
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, NSW, 2052, Australia
| | - W Gilbert
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, NSW, 2052, Australia
| | - F E Hudson
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, NSW, 2052, Australia
| | - K M Itoh
- School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, 223-8522, Japan
| | - A A Kiselev
- HRL Laboratories, LLC, 3011 Malibu Canyon Road, Malibu, CA, 90265, USA
| | - T D Ladd
- HRL Laboratories, LLC, 3011 Malibu Canyon Road, Malibu, CA, 90265, USA
| | - A Morello
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, NSW, 2052, Australia
| | - A Laucht
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, NSW, 2052, Australia
| | - A S Dzurak
- Centre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, NSW, 2052, Australia.
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19
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Volk C, Chatterjee A, Ansaloni F, Marcus CM, Kuemmeth F. Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate. NANO LETTERS 2019; 19:5628-5633. [PMID: 31339321 DOI: 10.1021/acs.nanolett.9b02149] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Quantum dot arrays are a versatile platform for the implementation of spin qubits, as high-bandwidth sensor dots can be integrated with single-, double-, and triple-dot qubits yielding fast and high-fidelity qubit readout. However, for undoped silicon devices, reflectometry off sensor ohmics suffers from the finite resistivity of the two-dimensional electron gas (2DEG), and alternative readout methods are limited to measuring qubit capacitance, rather than qubit charge. By coupling a surface-mount resonant circuit to the plunger gate of a high-impedance sensor, we realized a fast charge sensing technique that is compatible with resistive 2DEGs. We demonstrate this by acquiring at high speed charge stability diagrams of double- and triple-dot arrays in Si/SiGe heterostructures as well as pulsed-gate single-shot charge and spin readout with integration times as low as 2.4 μs.
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Affiliation(s)
- Christian Volk
- Center for Quantum Devices, Niels Bohr Institute , University of Copenhagen and Microsoft Quantum Lab Copenhagen , Universitetsparken 5 , 2100 Copenhagen , Denmark
| | - Anasua Chatterjee
- Center for Quantum Devices, Niels Bohr Institute , University of Copenhagen and Microsoft Quantum Lab Copenhagen , Universitetsparken 5 , 2100 Copenhagen , Denmark
| | - Fabio Ansaloni
- Center for Quantum Devices, Niels Bohr Institute , University of Copenhagen and Microsoft Quantum Lab Copenhagen , Universitetsparken 5 , 2100 Copenhagen , Denmark
| | - Charles M Marcus
- Center for Quantum Devices, Niels Bohr Institute , University of Copenhagen and Microsoft Quantum Lab Copenhagen , Universitetsparken 5 , 2100 Copenhagen , Denmark
| | - Ferdinand Kuemmeth
- Center for Quantum Devices, Niels Bohr Institute , University of Copenhagen and Microsoft Quantum Lab Copenhagen , Universitetsparken 5 , 2100 Copenhagen , Denmark
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20
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Zheng G, Samkharadze N, Noordam ML, Kalhor N, Brousse D, Sammak A, Scappucci G, Vandersypen LMK. Rapid gate-based spin read-out in silicon using an on-chip resonator. NATURE NANOTECHNOLOGY 2019; 14:742-746. [PMID: 31285611 DOI: 10.1038/s41565-019-0488-9] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2018] [Accepted: 05/27/2019] [Indexed: 06/09/2023]
Abstract
Silicon spin qubits are one of the leading platforms for quantum computation1,2. As with any qubit implementation, a crucial requirement is the ability to measure individual quantum states rapidly and with high fidelity. Since the signal from a single electron spin is minute, the different spin states are converted to different charge states3,4. Charge detection, so far, has mostly relied on external electrometers5-7, which hinders scaling to two-dimensional spin qubit arrays2,8,9. Alternatively, gate-based dispersive read-out based on off-chip lumped element resonators has been demonstrated10-13, but integration times of 0.2-2 ms were required to achieve single-shot read-out14-16. Here, we connect an on-chip superconducting resonant circuit to two of the gates that confine electrons in a double quantum dot. Measurement of the power transmitted through a feedline coupled to the resonator probes the charge susceptibility, distinguishing whether or not an electron can oscillate between the dots in response to the probe power. With this approach, we achieve a signal-to-noise ratio of about six within an integration time of only 1 μs. Using Pauli's exclusion principle for spin-to-charge conversion, we demonstrate single-shot read-out of a two-electron spin state with an average fidelity of >98% in 6 μs. This result may form the basis of frequency-multiplexed read-out in dense spin qubit systems without external electrometers, therefore simplifying the system architecture.
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Affiliation(s)
- Guoji Zheng
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Nodar Samkharadze
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
- QuTech and Netherlands Organization for Applied Scientific Research (TNO), Delft, The Netherlands
| | - Marc L Noordam
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Nima Kalhor
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Delphine Brousse
- QuTech and Netherlands Organization for Applied Scientific Research (TNO), Delft, The Netherlands
| | - Amir Sammak
- QuTech and Netherlands Organization for Applied Scientific Research (TNO), Delft, The Netherlands
| | - Giordano Scappucci
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Lieven M K Vandersypen
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands.
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21
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Hu X. Fast and space-efficient spin sensing. NATURE NANOTECHNOLOGY 2019; 14:735-736. [PMID: 31316155 DOI: 10.1038/s41565-019-0516-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Affiliation(s)
- Xuedong Hu
- Department of Physics, University at Buffalo, SUNY, Buffalo, NY, USA.
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22
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Urdampilleta M, Niegemann DJ, Chanrion E, Jadot B, Spence C, Mortemousque PA, Bäuerle C, Hutin L, Bertrand B, Barraud S, Maurand R, Sanquer M, Jehl X, De Franceschi S, Vinet M, Meunier T. Gate-based high fidelity spin readout in a CMOS device. NATURE NANOTECHNOLOGY 2019; 14:737-741. [PMID: 31086305 DOI: 10.1038/s41565-019-0443-9] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2018] [Accepted: 03/29/2019] [Indexed: 06/09/2023]
Abstract
The engineering of a compact qubit unit cell that embeds all quantum functionalities is mandatory for large-scale integration. In addition, these functionalities should present the lowest error rate possible to successfully implement quantum error correction protocols1. Electron spins in silicon quantum dots are particularly promising because of their high control fidelity2-5 and their potential compatibility with complementary metal-oxide-semiconductor industrial platforms6,7. However, an efficient and scalable spin readout scheme is still missing. Here we demonstrate a high fidelity and robust spin readout based on gate reflectometry in a complementary metal-oxide-semiconductor device that consists of a qubit dot and an ancillary dot coupled to an electron reservoir. This scalable method allows us to read out a spin in a single-shot manner with an average fidelity above 98% for a 0.5 ms integration time. To achieve such a fidelity, we combine radio-frequency gate reflectometry with a latched spin blockade mechanism that requires electron exchange between the ancillary dot and the reservoir. We show that the demonstrated high readout fidelity is fully preserved up to 0.5 K. This result holds particular relevance for the future cointegration of spin qubits and classical control electronics.
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Affiliation(s)
| | - David J Niegemann
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France
| | - Emmanuel Chanrion
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France
| | - Baptiste Jadot
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France
| | - Cameron Spence
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France
| | | | | | | | | | | | - Romain Maurand
- Univ. Grenoble Alpes, CEA, INAC-Pheliqs, Grenoble, France
| | - Marc Sanquer
- Univ. Grenoble Alpes, CEA, INAC-Pheliqs, Grenoble, France
| | - Xavier Jehl
- Univ. Grenoble Alpes, CEA, INAC-Pheliqs, Grenoble, France
| | | | - Maud Vinet
- CEA, LETI, Minatec Campus, Grenoble, France
| | - Tristan Meunier
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France.
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23
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Crippa A, Ezzouch R, Aprá A, Amisse A, Laviéville R, Hutin L, Bertrand B, Vinet M, Urdampilleta M, Meunier T, Sanquer M, Jehl X, Maurand R, De Franceschi S. Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon. Nat Commun 2019; 10:2776. [PMID: 31270319 PMCID: PMC6610084 DOI: 10.1038/s41467-019-10848-z] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/24/2018] [Accepted: 05/22/2019] [Indexed: 11/11/2022] Open
Abstract
Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal device overhead is a compelling step. Here we report the implementation of gate-coupled rf reflectometry for the dispersive readout of a fully functional spin qubit device. We use a p-type double-gate transistor made using industry-standard silicon technology. The first gate confines a hole quantum dot encoding the spin qubit, the second one a helper dot enabling readout. The qubit state is measured through the phase response of a lumped-element resonator to spin-selective interdot tunneling. The demonstrated qubit readout scheme requires no coupling to a Fermi reservoir, thereby offering a compact and potentially scalable solution whose operation may be extended above 1 K.
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Affiliation(s)
- A Crippa
- CEA, INAC-PHELIQS, University of Grenoble Alpes, F-38000, Grenoble, France.
| | - R Ezzouch
- CEA, INAC-PHELIQS, University of Grenoble Alpes, F-38000, Grenoble, France
| | - A Aprá
- CEA, INAC-PHELIQS, University of Grenoble Alpes, F-38000, Grenoble, France
| | - A Amisse
- CEA, INAC-PHELIQS, University of Grenoble Alpes, F-38000, Grenoble, France
| | - R Laviéville
- CEA, LETI, Minatec Campus, F-38000, Grenoble, France
| | - L Hutin
- CEA, LETI, Minatec Campus, F-38000, Grenoble, France
| | - B Bertrand
- CEA, LETI, Minatec Campus, F-38000, Grenoble, France
| | - M Vinet
- CEA, LETI, Minatec Campus, F-38000, Grenoble, France
| | - M Urdampilleta
- CNRS, Grenoble INP, Institut Néel, University of Grenoble Alpes, F-38000, Grenoble, France
| | - T Meunier
- CNRS, Grenoble INP, Institut Néel, University of Grenoble Alpes, F-38000, Grenoble, France
| | - M Sanquer
- CEA, INAC-PHELIQS, University of Grenoble Alpes, F-38000, Grenoble, France
| | - X Jehl
- CEA, INAC-PHELIQS, University of Grenoble Alpes, F-38000, Grenoble, France
| | - R Maurand
- CEA, INAC-PHELIQS, University of Grenoble Alpes, F-38000, Grenoble, France.
| | - S De Franceschi
- CEA, INAC-PHELIQS, University of Grenoble Alpes, F-38000, Grenoble, France
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24
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Zhang X, Li HO, Cao G, Xiao M, Guo GC, Guo GP. Semiconductor quantum computation. Natl Sci Rev 2019; 6:32-54. [PMID: 34691830 PMCID: PMC8291422 DOI: 10.1093/nsr/nwy153] [Citation(s) in RCA: 58] [Impact Index Per Article: 11.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/30/2018] [Revised: 11/05/2018] [Accepted: 12/18/2018] [Indexed: 11/12/2022] Open
Abstract
Semiconductors, a significant type of material in the information era, are becoming more and more powerful in the field of quantum information. In recent decades, semiconductor quantum computation was investigated thoroughly across the world and developed with a dramatically fast speed. The research varied from initialization, control and readout of qubits, to the architecture of fault-tolerant quantum computing. Here, we first introduce the basic ideas for quantum computing, and then discuss the developments of single- and two-qubit gate control in semiconductors. Up to now, the qubit initialization, control and readout can be realized with relatively high fidelity and a programmable two-qubit quantum processor has even been demonstrated. However, to further improve the qubit quality and scale it up, there are still some challenges to resolve such as the improvement of the readout method, material development and scalable designs. We discuss these issues and introduce the forefronts of progress. Finally, considering the positive trend of the research on semiconductor quantum devices and recent theoretical work on the applications of quantum computation, we anticipate that semiconductor quantum computation may develop fast and will have a huge impact on our lives in the near future.
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Affiliation(s)
- Xin Zhang
- Key Laboratory of Quantum Information, CAS, University of Science and Technology of China, Hefei 230026, China
- Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Hai-Ou Li
- Key Laboratory of Quantum Information, CAS, University of Science and Technology of China, Hefei 230026, China
- Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Gang Cao
- Key Laboratory of Quantum Information, CAS, University of Science and Technology of China, Hefei 230026, China
- Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Ming Xiao
- Key Laboratory of Quantum Information, CAS, University of Science and Technology of China, Hefei 230026, China
- Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Guang-Can Guo
- Key Laboratory of Quantum Information, CAS, University of Science and Technology of China, Hefei 230026, China
- Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Guo-Ping Guo
- Key Laboratory of Quantum Information, CAS, University of Science and Technology of China, Hefei 230026, China
- Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei 230026, China
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