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Cheng B, Gao Y, Zheng Z, Chen S, Liu Z, Zhang L, Zhu Q, Li H, Li L, Zeng C. Giant nonlinear Hall and wireless rectification effects at room temperature in the elemental semiconductor tellurium. Nat Commun 2024; 15:5513. [PMID: 38951497 PMCID: PMC11217359 DOI: 10.1038/s41467-024-49706-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/27/2023] [Accepted: 06/17/2024] [Indexed: 07/03/2024] Open
Abstract
The second-order nonlinear Hall effect (NLHE) in non-centrosymmetric materials has recently drawn intense interest, since its inherent rectification could enable various device applications such as energy harvesting and wireless charging. However, previously reported NLHE systems normally suffer from relatively small Hall voltage outputs and/or low working temperatures. In this study, we report the observation of a pronounced NLHE in tellurium (Te) thin flakes at room temperature. Benefiting from the semiconductor nature of Te, the obtained nonlinear response can be readily enhanced through electrostatic gating, leading to a second-harmonic output at 300 K up to 2.8 mV. By utilizing such a giant NLHE, we further demonstrate the potential of Te as a wireless Hall rectifier within the radiofrequency range, which is manifested by the remarkable and tunable rectification effect also at room temperature. Extrinsic scattering is then revealed to be the dominant mechanism for the NLHE in Te, with symmetry breaking on the surface playing a key role. As a simple elemental semiconductor, Te provides an appealing platform to advance our understanding of nonlinear transport in solids and to develop NLHE-based electronic devices.
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Affiliation(s)
- Bin Cheng
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui, 230088, China
| | - Yang Gao
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Zhi Zheng
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui, 230088, China
| | - Shuhang Chen
- Department of Electronic Engineering and Information Science, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Zheng Liu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Ling Zhang
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui, 230088, China
| | - Qi Zhu
- Department of Electronic Engineering and Information Science, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Hui Li
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, Anhui, 230601, China
| | - Lin Li
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui, 230088, China.
| | - Changgan Zeng
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui, 230088, China.
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2
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Li Y, Yu W, Zhang K, Cui N, Yun T, Xia X, Jiang Y, Zhang G, Mu H, Lin S. Two-dimensional topological semimetals: an emerging candidate for terahertz detectors and on-chip integration. MATERIALS HORIZONS 2024; 11:2572-2602. [PMID: 38482962 DOI: 10.1039/d3mh02250a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2024]
Abstract
The importance of terahertz (THz) detection lies in its ability to provide detailed information in a non-destructive manner, making it a valuable tool across various domains including spectroscopy, communication, and security. The ongoing development of THz detectors aims to enhance their sensitivity, resolution and integration into compact and portable devices such as handheld scanners or integrated communication chips. Generally, two-dimensional (2D) materials are considered potential candidates for device miniaturization but detecting THz radiation using 2D semiconductors is generally difficult due to the ultra-small photon energy. However, this challenge is being addressed by the advent of topological semimetals (TSM) with zero-bandgap characteristics. These semimetals offer low-energy excitations in proximity to the Dirac point, which is particularly important for applications requiring a broad detection range. Their distinctive band structures with linear energy-momentum dispersion near the Fermi level also lead to high electron mobility and low effective mass. The presence of topologically protected dissipationless conducting channels and self-powered response provides a basis for low-energy integration. In order to establish paradigms for semimetal-based THz detectors, this review initially offers an analytical summary of THz detection principles. Then, the review demonstrates the distinct design of devices, the excellent performance derived from the topological surface state and unique band structures in TSM. Finally, we outline the prospective avenues for on-chip integration of TSM-based THz detectors. We believe this review can promote further research on the new generation of THz detectors and facilitate advancements in THz imaging, spectroscopy, and communication systems.
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Affiliation(s)
- Yun Li
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Wenzhi Yu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Kai Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- MOE Key Laboratory of Laser Life Science &Guangdong Provincial Key Laboratory of Laser Life Science, College of Biophotonics, South China Normal University, Guangzhou 510631, China
| | - Nan Cui
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
| | - Tinghe Yun
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
| | - Xue Xia
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Yan Jiang
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
- Institute of Physics, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Haoran Mu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
| | - Shenghuang Lin
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China.
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3
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Suárez-Rodríguez M, Martín-García B, Skowroński W, Staszek K, Calavalle F, Fert A, Gobbi M, Casanova F, Hueso LE. Microscale Chiral Rectennas for Energy Harvesting. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400729. [PMID: 38597368 DOI: 10.1002/adma.202400729] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2024] [Revised: 04/04/2024] [Indexed: 04/11/2024]
Abstract
Wireless radiofrequency rectifiers have the potential to power the billions of "Internet of Things" (IoT) devices currently in use by effectively harnessing ambient electromagnetic radiation. However, the current technology relies on the implementation of rectifiers based on Schottky diodes, which exhibit limited capabilities for high-frequency and low-power applications. Consequently, they require an antenna to capture the incoming signal and amplify the input power, thereby limiting the possibility of miniaturizing devices to the millimeter scale. Here, the authors report wireless rectification at the GHz range in a microscale device built on single chiral tellurium with extremely low input powers. By studying the crystal symmetry and the temperature dependence of the rectification, the authors demonstrate that its origin is the intrinsic nonlinear conductivity of the material. Additionally, the unprecedented ability to modulate the rectification output by an electrostatic gate is shown. These results open the path to developing tuneable microscale wireless rectifiers with a single material.
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Affiliation(s)
| | - Beatriz Martín-García
- CIC nanoGUNE BRTA, Donostia-San Sebastián, Basque Country, 20018, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48009, Spain
| | - Witold Skowroński
- Institute of Electronics, AGH University of Krakow, Kraków, 30-059, Poland
| | - Kamil Staszek
- Institute of Electronics, AGH University of Krakow, Kraków, 30-059, Poland
| | | | - Albert Fert
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, Palaiseau, 91767, France
- Donostia International Physics Center (DIPC), Donostia-San Sebastián, Basque Country, 20018, Spain
- Department of Advanced Polymers and Materials: Physics, Chemistry and Technology, Univesity of the Basque Country (UPV/EHU), Donostia-San Sebastián, Basque Country, 20018, Spain
| | - Marco Gobbi
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48009, Spain
- Centro de Física de Materiales (CSIC-UPV/EHU) and Materials Physics Center (MPC), Donostia-San Sebastián, Basque Country, 20018, Spain
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, Donostia-San Sebastián, Basque Country, 20018, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48009, Spain
| | - Luis E Hueso
- CIC nanoGUNE BRTA, Donostia-San Sebastián, Basque Country, 20018, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48009, Spain
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4
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Bainsla L, Zhao B, Behera N, Hoque AM, Sjöström L, Martinelli A, Abdel-Hafiez M, Åkerman J, Dash SP. Large out-of-plane spin-orbit torque in topological Weyl semimetal TaIrTe 4. Nat Commun 2024; 15:4649. [PMID: 38821948 PMCID: PMC11143358 DOI: 10.1038/s41467-024-48872-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/08/2023] [Accepted: 05/16/2024] [Indexed: 06/02/2024] Open
Abstract
The unique electronic properties of topological quantum materials, such as protected surface states and exotic quasiparticles, can provide an out-of-plane spin-polarized current needed for external field-free magnetization switching of magnets with perpendicular magnetic anisotropy. Conventional spin-orbit torque (SOT) materials provide only an in-plane spin-polarized current, and recently explored materials with lower crystal symmetries provide very low out-of-plane spin-polarized current components, which are not suitable for energy-efficient SOT applications. Here, we demonstrate a large out-of-plane damping-like SOT at room temperature using the topological Weyl semimetal candidate TaIrTe4 with a lower crystal symmetry. We performed spin-torque ferromagnetic resonance (STFMR) and second harmonic Hall measurements on devices based on TaIrTe4/Ni80Fe20 heterostructures and observed a large out-of-plane damping-like SOT efficiency. The out-of-plane spin Hall conductivity is estimated to be (4.05 ± 0.23)×104 (ℏ ⁄ 2e) (Ωm)-1, which is an order of magnitude higher than the reported values in other materials.
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Affiliation(s)
- Lakhan Bainsla
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296, Göteborg, Sweden.
- Department of Physics, Indian Institute of Technology Ropar, Rupnagar, 140001, Punjab, India.
| | - Bing Zhao
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296, Göteborg, Sweden
| | - Nilamani Behera
- Department of Physics, University of Gothenburg, Göteborg, SE-41296, Göteborg, Sweden
| | - Anamul Md Hoque
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296, Göteborg, Sweden
| | - Lars Sjöström
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296, Göteborg, Sweden
| | - Anna Martinelli
- Department of Chemistry and Chemical Engineering, Chalmers University of Technology, Göteborg, 41296, Sweden
| | - Mahmoud Abdel-Hafiez
- Department of Applied Physics and Astronomy, University of Sharjah, P. O. Box 27272, Sharjah, United Arab Emirates
- Department of Physics and Astronomy, Uppsala University, Box 516, SE-751 20, Uppsala, Sweden
| | - Johan Åkerman
- Department of Physics, University of Gothenburg, Göteborg, SE-41296, Göteborg, Sweden
- Center for Science and Innovation in Spintronics, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan
- Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan
| | - Saroj P Dash
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296, Göteborg, Sweden.
- Wallenberg Initiative Materials Science for Sustainability, Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296, Göteborg, Sweden.
- Graphene Center, Chalmers University of Technology, SE-41296, Göteborg, Sweden.
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5
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Lee JE, Wang A, Chen S, Kwon M, Hwang J, Cho M, Son KH, Han DS, Choi JW, Kim YD, Mo SK, Petrovic C, Hwang C, Park SY, Jang C, Ryu H. Spin-orbit-splitting-driven nonlinear Hall effect in NbIrTe 4. Nat Commun 2024; 15:3971. [PMID: 38729931 PMCID: PMC11087648 DOI: 10.1038/s41467-024-47643-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/26/2023] [Accepted: 04/08/2024] [Indexed: 05/12/2024] Open
Abstract
The Berry curvature dipole (BCD) serves as a one of the fundamental contributors to emergence of the nonlinear Hall effect (NLHE). Despite intense interest due to its potential for new technologies reaching beyond the quantum efficiency limit, the interplay between BCD and NLHE has been barely understood yet in the absence of a systematic study on the electronic band structure. Here, we report NLHE realized in NbIrTe4 that persists above room temperature coupled with a sign change in the Hall conductivity at 150 K. First-principles calculations combined with angle-resolved photoemission spectroscopy (ARPES) measurements show that BCD tuned by the partial occupancy of spin-orbit split bands via temperature is responsible for the temperature-dependent NLHE. Our findings highlight the correlation between BCD and the electronic band structure, providing a viable route to create and engineer the non-trivial Hall effect by tuning the geometric properties of quasiparticles in transition-metal chalcogen compounds.
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Affiliation(s)
- Ji-Eun Lee
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea
- Department of Physics, Pusan National University, Busan, 46241, South Korea
- Max Planck POSTECH Center for Complex Phase Materials, Pohang University of Science and Technology, Pohang, 37673, South Korea
| | - Aifeng Wang
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York, 11973, US
- Low Temperature Physics Laboratory, College of Physics and Center of Quantum Materials and Devices, Chongqing University, Chongqing, 400044, China
| | - Shuzhang Chen
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York, 11973, US
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York, 11794-3800, USA
| | - Minseong Kwon
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea
- Department of Physics and Department of Information Display, Kyung Hee University, Seoul, 02447, South Korea
| | - Jinwoong Hwang
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Physics and Institute of Quantum Convergence Technology, Kangwon National University, Chuncheon, 24341, South Korea
| | - Minhyun Cho
- Department of Physics and Department of Information Display, Kyung Hee University, Seoul, 02447, South Korea
| | - Ki-Hoon Son
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea
| | - Dong-Soo Han
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea
| | - Jun Woo Choi
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea
| | - Young Duck Kim
- Department of Physics and Department of Information Display, Kyung Hee University, Seoul, 02447, South Korea
| | - Sung-Kwan Mo
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Cedomir Petrovic
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York, 11973, US
- Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York, 11794-3800, USA
- Shanghai Advanced Research in Physical Sciences, Shanghai, 201203, China
| | - Choongyu Hwang
- Department of Physics, Pusan National University, Busan, 46241, South Korea.
| | - Se Young Park
- Department of Physics and Origin of Matter and Evolution of Galaxies (OMEG) Institute, Soongsil University, Seoul, 06978, South Korea.
- Integrative Institute of Basic Sciences, Soongsil University, Seoul, 06978, South Korea.
| | - Chaun Jang
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea.
| | - Hyejin Ryu
- Center for Spintronics, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea.
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6
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Li C, Wang R, Zhang S, Qin Y, Ying Z, Wei B, Dai Z, Guo F, Chen W, Zhang R, Wang B, Wang X, Song F. Observation of giant non-reciprocal charge transport from quantum Hall states in a topological insulator. NATURE MATERIALS 2024:10.1038/s41563-024-01874-4. [PMID: 38641696 DOI: 10.1038/s41563-024-01874-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2023] [Accepted: 03/19/2024] [Indexed: 04/21/2024]
Abstract
Symmetry breaking in quantum materials is of great importance and can lead to non-reciprocal charge transport. Topological insulators provide a unique platform to study non-reciprocal charge transport due to their surface states, especially quantum Hall states under an external magnetic field. Here we report the observation of non-reciprocal charge transport mediated by quantum Hall states in devices composed of the intrinsic topological insulator Sn-Bi1.1Sb0.9Te2S, which is attributed to asymmetric scattering between quantum Hall states and Dirac surface states. A giant non-reciprocal coefficient of up to 2.26 × 105 A-1 is found. Our work not only reveals the properties of non-reciprocal charge transport of quantum Hall states in topological insulators but also paves the way for future electronic devices.
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Affiliation(s)
- Chunfeng Li
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Rui Wang
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China
- Hefei National Laboratory, Hefei, China
| | - Shuai Zhang
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China.
| | - Yuyuan Qin
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China
| | - Zhe Ying
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China
| | - Boyuan Wei
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China
| | - Zheng Dai
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China
| | - Fengyi Guo
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China
| | - Wei Chen
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China
| | - Rong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
- Department of Physics, Xiamen University, Xiamen, China
| | - Baigeng Wang
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China
| | - Xuefeng Wang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
| | - Fengqi Song
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing, China.
- Institute of Atom Manufacturing, Nanjing University, Suzhou, China.
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7
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Tang J, Ding TS, Chen H, Gao A, Qian T, Huang Z, Sun Z, Han X, Strasser A, Li J, Geiwitz M, Shehabeldin M, Belosevich V, Wang Z, Wang Y, Watanabe K, Taniguchi T, Bell DC, Wang Z, Fu L, Zhang Y, Qian X, Burch KS, Shi Y, Ni N, Chang G, Xu SY, Ma Q. Dual quantum spin Hall insulator by density-tuned correlations in TaIrTe 4. Nature 2024; 628:515-521. [PMID: 38509374 DOI: 10.1038/s41586-024-07211-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/21/2023] [Accepted: 02/20/2024] [Indexed: 03/22/2024]
Abstract
The convergence of topology and correlations represents a highly coveted realm in the pursuit of new quantum states of matter1. Introducing electron correlations to a quantum spin Hall (QSH) insulator can lead to the emergence of a fractional topological insulator and other exotic time-reversal-symmetric topological order2-8, not possible in quantum Hall and Chern insulator systems. Here we report a new dual QSH insulator within the intrinsic monolayer crystal of TaIrTe4, arising from the interplay of its single-particle topology and density-tuned electron correlations. At charge neutrality, monolayer TaIrTe4 demonstrates the QSH insulator, manifesting enhanced nonlocal transport and quantized helical edge conductance. After introducing electrons from charge neutrality, TaIrTe4 shows metallic behaviour in only a small range of charge densities but quickly goes into a new insulating state, entirely unexpected on the basis of the single-particle band structure of TaIrTe4. This insulating state could arise from a strong electronic instability near the van Hove singularities, probably leading to a charge density wave (CDW). Remarkably, within this correlated insulating gap, we observe a resurgence of the QSH state. The observation of helical edge conduction in a CDW gap could bridge spin physics and charge orders. The discovery of a dual QSH insulator introduces a new method for creating topological flat minibands through CDW superlattices, which offer a promising platform for exploring time-reversal-symmetric fractional phases and electromagnetism2-4,9,10.
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Affiliation(s)
- Jian Tang
- Department of Physics, Boston College, Chestnut Hill, MA, USA
| | | | - Hongyu Chen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Anyuan Gao
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, USA
| | - Tiema Qian
- Department of Physics and Astronomy and California NanoSystems Institute, University of California Los Angeles, Los Angeles, CA, USA
| | - Zumeng Huang
- Department of Physics, Boston College, Chestnut Hill, MA, USA
| | - Zhe Sun
- Department of Physics, Boston College, Chestnut Hill, MA, USA
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, USA
| | - Xin Han
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Alex Strasser
- Department of Materials Science and Engineering, Texas A&M University, College Station, TX, USA
| | - Jiangxu Li
- Department of Physics and Astronomy, University of Tennessee, Knoxville, TN, USA
- Min H. Kao Department of Electrical Engineering and Computer Science, University of Tennessee, Knoxville, TN, USA
| | - Michael Geiwitz
- Department of Physics, Boston College, Chestnut Hill, MA, USA
| | | | | | - Zihan Wang
- Department of Physics, Boston College, Chestnut Hill, MA, USA
| | - Yiping Wang
- Department of Physics, Boston College, Chestnut Hill, MA, USA
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - David C Bell
- Harvard John A. Paulson School of Engineering and Applied Sciences and The Center for Nanoscale Systems, Harvard University, Cambridge, MA, USA
| | - Ziqiang Wang
- Department of Physics, Boston College, Chestnut Hill, MA, USA
| | - Liang Fu
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yang Zhang
- Department of Physics and Astronomy, University of Tennessee, Knoxville, TN, USA
- Min H. Kao Department of Electrical Engineering and Computer Science, University of Tennessee, Knoxville, TN, USA
| | - Xiaofeng Qian
- Department of Materials Science and Engineering, Texas A&M University, College Station, TX, USA
| | - Kenneth S Burch
- Department of Physics, Boston College, Chestnut Hill, MA, USA
| | - Youguo Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Ni Ni
- Department of Physics and Astronomy and California NanoSystems Institute, University of California Los Angeles, Los Angeles, CA, USA
| | - Guoqing Chang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore.
| | - Su-Yang Xu
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, USA
| | - Qiong Ma
- Department of Physics, Boston College, Chestnut Hill, MA, USA.
- CIFAR Azrieli Global Scholars program, CIFAR, Toronto, Ontario, Canada.
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8
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Si W, Zhou W, Liu X, Wang K, Liao Y, Yan F, Ji X. Recent Advances in Broadband Photodetectors from Infrared to Terahertz. MICROMACHINES 2024; 15:427. [PMID: 38675239 PMCID: PMC11051910 DOI: 10.3390/mi15040427] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/19/2024] [Revised: 03/15/2024] [Accepted: 03/19/2024] [Indexed: 04/28/2024]
Abstract
The growing need for the multiband photodetection of a single scene has promoted the development of both multispectral coupling and broadband detection technologies. Photodetectors operating across the infrared (IR) to terahertz (THz) regions have many applications such as in optical communications, sensing imaging, material identification, and biomedical detection. In this review, we present a comprehensive overview of the latest advances in broadband photodetectors operating in the infrared to terahertz range, highlighting their classification, operating principles, and performance characteristics. We discuss the challenges faced in achieving broadband detection and summarize various strategies employed to extend the spectral response of photodetectors. Lastly, we conclude by outlining future research directions in the field of broadband photodetection, including the utilization of novel materials, artificial microstructure, and integration schemes to overcome current limitations. These innovative methodologies have the potential to achieve high-performance, ultra-broadband photodetectors.
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Affiliation(s)
- Wei Si
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Wenbin Zhou
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Xiangze Liu
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Ke Wang
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Yiming Liao
- School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Feng Yan
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
| | - Xiaoli Ji
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
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9
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Wang L, Zhu J, Chen H, Wang H, Liu J, Huang YX, Jiang B, Zhao J, Shi H, Tian G, Wang H, Yao Y, Yu D, Wang Z, Xiao C, Yang SA, Wu X. Orbital Magneto-Nonlinear Anomalous Hall Effect in Kagome Magnet Fe_{3}Sn_{2}. PHYSICAL REVIEW LETTERS 2024; 132:106601. [PMID: 38518320 DOI: 10.1103/physrevlett.132.106601] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Revised: 11/14/2023] [Accepted: 12/20/2023] [Indexed: 03/24/2024]
Abstract
It has been theoretically predicted that perturbation of the Berry curvature by electromagnetic fields gives rise to intrinsic nonlinear anomalous Hall effects that are independent of scattering. Two types of nonlinear anomalous Hall effects are expected. The electric nonlinear Hall effect has recently begun to receive attention, while very few studies are concerned with the magneto-nonlinear Hall effect. Here, we combine experiment and first-principles calculations to show that the kagome ferromagnet Fe_{3}Sn_{2} displays such a magneto-nonlinear Hall effect. By systematic field angular and temperature-dependent transport measurements, we unambiguously identify a large anomalous Hall current that is linear in both applied in-plane electric and magnetic fields, utilizing a unique in-plane configuration. We clarify its dominant orbital origin and connect it to the magneto-nonlinear Hall effect. The effect is governed by the intrinsic quantum geometric properties of Bloch electrons. Our results demonstrate the significance of the quantum geometry of electron wave functions from the orbital degree of freedom and open up a new direction in Hall transport effects.
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Affiliation(s)
- Lujunyu Wang
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Jiaojiao Zhu
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
| | - Haiyun Chen
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Hui Wang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Jinjin Liu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Yue-Xin Huang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
- School of Sciences, Great Bay University, Dongguan 523000, China
| | - Bingyan Jiang
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Jiaji Zhao
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Hengjie Shi
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Guang Tian
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Haoyu Wang
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Yugui Yao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
- Material Science Center, Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, China
| | - Dapeng Yu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Zhiwei Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
- Material Science Center, Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, China
| | - Cong Xiao
- Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, China
- Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, China
| | - Shengyuan A Yang
- Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, China
| | - Xiaosong Wu
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226010, Jiangsu, China
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10
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Lihm JM, Park CH. Nonlinear Hall Effect from Long-Lived Valley-Polarizing Relaxons. PHYSICAL REVIEW LETTERS 2024; 132:106402. [PMID: 38518315 DOI: 10.1103/physrevlett.132.106402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Revised: 12/07/2023] [Accepted: 01/09/2024] [Indexed: 03/24/2024]
Abstract
The nonlinear Hall effect has attracted much attention due to the famous, widely adopted interpretation in terms of the Berry curvature dipole in momentum space. Using ab initio Boltzmann transport equations, we find a 60% enhancement in the nonlinear Hall effect of n-doped GeTe and its noticeable frequency dependence, qualitatively different from the predictions based on the Berry curvature dipole. The origin of these differences is long-lived valley polarization in the electron distribution arising from electron-phonon scattering. Our findings await immediate experimental confirmation.
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Affiliation(s)
- Jae-Mo Lihm
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea; Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, Korea; and Center for Theoretical Physics, Seoul National University, Seoul 08826, Korea
| | - Cheol-Hwan Park
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea; Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, Korea; and Center for Theoretical Physics, Seoul National University, Seoul 08826, Korea
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11
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Li S, Wang X, Yang Z, Zhang L, Teo SL, Lin M, He R, Wang N, Song P, Tian W, Loh XJ, Zhu Q, Sun B, Wang XR. Giant Third-Order Nonlinear Hall Effect in Misfit Layer Compound (SnS) 1.17(NbS 2) 3. ACS APPLIED MATERIALS & INTERFACES 2024; 16:11043-11049. [PMID: 38349718 DOI: 10.1021/acsami.3c18319] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/01/2024]
Abstract
The nonlinear Hall effect (NLHE) holds immense significance in recognizing the band geometry and its potential applications in current rectification. Recent discoveries have expanded the study from second-order to third-order nonlinear Hall effect (THE), which is governed by an intrinsic band geometric quantity called the Berry Connection Polarizability tensor. Here we demonstrate a giant THE in a misfit layer compound, (SnS)1.17(NbS2)3. While the THE is prohibited in individual NbS2 and SnS due to the constraints imposed by the crystal symmetry and their band structures, a remarkable THE emerges when a superlattice is formed by introducing a monolayer of SnS. The angular-dependent THE and its scaling relationship indicate that the phenomenon could be correlated to the band geometry modulation, concurrently with the symmetry breaking. The resulting strength of THE is orders of magnitude higher compared to recent studies. Our work illuminates the modulation of structural and electronic geometries for novel quantum phenomena through interface engineering.
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Affiliation(s)
- Shengyao Li
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Xueyan Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Zherui Yang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Lijuan Zhang
- Tsinghua-Berkeley Shenzhen Institute and Shenzhen Geim Graphene Center, Tsinghua University, Shenzhen 518055, Guangdong, China
| | - Siew Lang Teo
- Agency for Science, Technology and Research (A*STAR), Institute of Materials Research and Engineering (IMRE), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
| | - Ming Lin
- Agency for Science, Technology and Research (A*STAR), Institute of Materials Research and Engineering (IMRE), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
| | - Ri He
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Naizhou Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Peng Song
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore 639798, Singapore
| | - Wanghao Tian
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore 639798, Singapore
| | - Xian Jun Loh
- Agency for Science, Technology and Research (A*STAR), Institute of Materials Research and Engineering (IMRE), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
| | - Qiang Zhu
- Agency for Science, Technology and Research (A*STAR), Institute of Materials Research and Engineering (IMRE), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore
- Energy and Environment (ISCE2), Agency for Science, Technology and Research (A*STAR), Institute of Sustainability for Chemicals, 1 Pesek Road, Jurong Island, Singapore 627833, Singapore
- School of Chemistry, Chemical Engineering and Biotechnology, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Bo Sun
- Tsinghua-Berkeley Shenzhen Institute and Shenzhen Geim Graphene Center, Tsinghua University, Shenzhen 518055, Guangdong, China
- Tsinghua Shenzhen International Graduate School, Guangdong Provincial Key Laboratory of Thermal Management Engineering and Materials, Institute of Materials Research, Shenzhen 518055, Guangdong, China
| | - X Renshaw Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore 639798, Singapore
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12
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Suárez-Rodríguez M, Martín-García B, Skowroński W, Calavalle F, Tsirkin SS, Souza I, De Juan F, Chuvilin A, Fert A, Gobbi M, Casanova F, Hueso LE. Odd Nonlinear Conductivity under Spatial Inversion in Chiral Tellurium. PHYSICAL REVIEW LETTERS 2024; 132:046303. [PMID: 38335368 DOI: 10.1103/physrevlett.132.046303] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2023] [Accepted: 12/13/2023] [Indexed: 02/12/2024]
Abstract
Electrical transport in noncentrosymmetric materials departs from the well-established phenomenological Ohm's law. Instead of a linear relation between current and electric field, a nonlinear conductivity emerges along specific crystallographic directions. This nonlinear transport is fundamentally related to the lack of spatial inversion symmetry. However, the experimental implications of an inversion symmetry operation on the nonlinear conductivity remain to be explored. Here, we report on a large, nonlinear conductivity in chiral tellurium. By measuring samples with opposite handedness, we demonstrate that the nonlinear transport is odd under spatial inversion. Furthermore, by applying an electrostatic gate, we modulate the nonlinear output by a factor of 300, reaching the highest reported value excluding engineered heterostructures. Our results establish chiral tellurium as an ideal compound not just to study the fundamental interplay between crystal structure, symmetry operations and nonlinear transport; but also to develop wireless rectifiers and energy-harvesting chiral devices.
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Affiliation(s)
| | - Beatriz Martín-García
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Witold Skowroński
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- AGH University of Krakow, Institute of Electronics, 30-059 Kraków, Poland
| | - F Calavalle
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Stepan S Tsirkin
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Ivo Souza
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Fernando De Juan
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Donostia International Physics Center, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Andrey Chuvilin
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Albert Fert
- Donostia International Physics Center, 20018 Donostia-San Sebastián, Basque Country, Spain
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
- Department of Materials Physics UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Marco Gobbi
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Luis E Hueso
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
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13
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Kaplan D, Holder T, Yan B. Unification of Nonlinear Anomalous Hall Effect and Nonreciprocal Magnetoresistance in Metals by the Quantum Geometry. PHYSICAL REVIEW LETTERS 2024; 132:026301. [PMID: 38277599 DOI: 10.1103/physrevlett.132.026301] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2022] [Revised: 07/09/2023] [Accepted: 11/16/2023] [Indexed: 01/28/2024]
Abstract
The quantum geometry has significant consequences in determining transport and optical properties in quantum materials. Here, we use a semiclassical formalism coupled with perturbative corrections unifying the nonlinear anomalous Hall effect and nonreciprocal magnetoresistance (longitudinal resistance) from the quantum geometry. In the dc limit, both transverse and longitudinal nonlinear conductivities include a term due to the normalized quantum metric dipole. The quantum metric contribution is intrinsic and does not scale with the quasiparticle lifetime. We demonstrate the coexistence of a nonlinear anomalous Hall effect and nonreciprocal magnetoresistance in films of the doped antiferromagnetic topological insulator MnBi_{2}Te_{4}. Our work indicates that both longitudinal and transverse nonlinear transport provide a sensitive probe of the quantum geometry in solids.
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Affiliation(s)
- Daniel Kaplan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Tobias Holder
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 7610001, Israel
- Raymond and Beverly Sackler School of Physics and Astronomy, Tel Aviv University, Tel Aviv, Israel
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 7610001, Israel
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14
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Lu XF, Zhang CP, Wang N, Zhao D, Zhou X, Gao W, Chen XH, Law KT, Loh KP. Nonlinear transport and radio frequency rectification in BiTeBr at room temperature. Nat Commun 2024; 15:245. [PMID: 38172558 PMCID: PMC10764878 DOI: 10.1038/s41467-023-44439-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Accepted: 12/13/2023] [Indexed: 01/05/2024] Open
Abstract
Materials showing second-order nonlinear transport under time reversal symmetry can be used for Radio Frequency (RF) rectification, but practical application demands room temperature operation and sensitivity to microwatts level RF signals in the ambient. In this study, we demonstrate that BiTeBr exhibits a giant nonlinear response which persists up to 350 K. Through scaling and symmetry analysis, we show that skew scattering is the dominant mechanism. Additionally, the sign of the nonlinear response can be electrically switched by tuning the Fermi energy. Theoretical analysis suggests that the large Rashba spin-orbit interactions (SOI), which gives rise to the chirality of the Bloch electrons, provide the microscopic origin of the observed nonlinear response. Our BiTeBr rectifier is capable of rectifying radiation within the frequency range of 0.2 to 6 gigahertz at room temperature, even at extremely low power levels of -15 dBm, and without the need for external biasing. Our work highlights that materials exhibiting large Rashba SOI have the potential to exhibit nonlinear responses at room temperature, making them promising candidates for harvesting high-frequency and low-power ambient electromagnetic energy.
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Affiliation(s)
- Xiu Fang Lu
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Cheng-Ping Zhang
- Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China
| | - Naizhou Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Dan Zhao
- Department of Physics and Hefei National Laboratory for Physical Science at Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - Xin Zhou
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Xian Hui Chen
- Department of Physics and Hefei National Laboratory for Physical Science at Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - K T Law
- Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China.
| | - Kian Ping Loh
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore.
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15
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Zhai J, Trama M, Liu H, Zhu Z, Zhu Y, Perroni CA, Citro R, He P, Shen J. Large Nonlinear Transverse Conductivity and Berry Curvature in KTaO 3 Based Two-Dimensional Electron Gas. NANO LETTERS 2023; 23:11892-11898. [PMID: 38079285 DOI: 10.1021/acs.nanolett.3c03948] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Two-dimensional electron gas (2DEG) at oxide interfaces exhibits various exotic properties stemming from interfacial inversion and symmetry breaking. In this work, we report large nonlinear transverse conductivities in the LaAlO3/KTaO3 interface 2DEG under zero magnetic field. Skew scattering was identified as the dominant origin based on the cubic scaling of nonlinear transverse conductivity with linear longitudinal conductivity and 3-fold symmetry. Moreover, gate-tunable nonlinear transport with pronounced peak and dip was observed and reproduced by our theoretical calculation. These results indicate the presence of Berry curvature hotspots and thus a large Berry curvature triplet at the oxide interface. Our theoretical calculations confirm the existence of large Berry curvatures from the avoided crossing of multiple 5d-orbit bands, orders of magnitude larger than that in transition-metal dichalcogenides. Nonlinear transport offers a new pathway to probe the Berry curvature at oxide interfaces and facilitates new applications in oxide nonlinear electronics.
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Affiliation(s)
- Jinfeng Zhai
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Mattia Trama
- Physics Department "E.R. Caianiello" and CNR-SPIN Salerno Unit, Universitá Degli Studi di Salerno, Via Giovanni Paolo II, 132, I-84084 Fisciano (Sa), Italy
- INFN─Gruppo Collegato di Salerno, I-84084 Fisciano, Italy
- Institute for Theoretical Solid State Physics, IFW Dresden, Helmholtzstr. 20, 01069 Dresden, Germany
| | - Hao Liu
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Zhifei Zhu
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Yinyan Zhu
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Carmine Antonio Perroni
- Physics Department "Ettore Pancini", Universitá Degli Studi di Napoli "Federico II", Complesso Univ. Monte S. Angelo, Via Cintia, I-80126 Napoli, Italy
- CNR-SPIN Napoli Unit, Complesso Univ. Monte S. Angelo, Via Cintia, I-80126 Napoli, Italy
- INFN Napoli Unit, Complesso Univ. Monte S. Angelo, Via Cintia, I-80126 Napoli, Italy
| | - Roberta Citro
- Physics Department "E.R. Caianiello" and CNR-SPIN Salerno Unit, Universitá Degli Studi di Salerno, Via Giovanni Paolo II, 132, I-84084 Fisciano (Sa), Italy
- INFN─Gruppo Collegato di Salerno, I-84084 Fisciano, Italy
| | - Pan He
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
| | - Jian Shen
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
- Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
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16
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Skaggs CM, Ryu DC, Bhandari H, Xin Y, Kang CJ, Lapidus SH, Siegfried PE, Ghimire NJ, Tan X. IrGe 4: A Predicted Weyl-Metal with a Chiral Crystal Structure. Inorg Chem 2023; 62:19395-19403. [PMID: 37983308 DOI: 10.1021/acs.inorgchem.3c01528] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/22/2023]
Abstract
Polycrystalline IrGe4 was synthesized by annealing elements at 800 °C for 240 h, and the composition was confirmed by energy-dispersive X-ray spectroscopy. IrGe4 adopts a chiral crystal structure (space group P3121) instead of a polar crystal structure (P31), which was corroborated by the convergent-beam electron diffraction and Rietveld refinements using synchrotron powder X-ray diffraction data. The crystal structure features layers of IrGe8 polyhedra along the b axis, and the layers are connected by edge- and corner-sharing. Each layer consists of corner-shared [Ir3Ge20] trimers, which are formed by three IrGe8 polyhedra connected by edge-sharing. Temperature-dependent resistivity indicates metallic behavior. The magnetoresistance increases with increasing applied magnetic field, and the nonsaturating magnetoresistance reaches 11.5% at 9 T and 10 K. The Hall resistivity suggests that holes are the majority carrier type, with a carrier concentration of 4.02 × 1021 cm-3 at 300 K. Electronic band structures calculated by density functional theory reveal a Weyl point with a chiral charge of +3 above the Fermi level.
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Affiliation(s)
- Callista M Skaggs
- Department of Chemistry and Biochemistry, George Mason University, Fairfax, Virginia 22030, United States
| | - Dong-Choon Ryu
- Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea
- Institute of Quantum Systems, Chungnam National University, Daejeon 34134, Republic of Korea
| | - Hari Bhandari
- Department of Physics and Astronomy, George Mason University, Fairfax, Virginia 22030, United States
- Quantum Science and Engineering Center, George Mason University, Fairfax, Virginia 22030, United States
| | - Yan Xin
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, United States
| | - Chang-Jong Kang
- Department of Physics, Chungnam National University, Daejeon 34134, Republic of Korea
- Institute of Quantum Systems, Chungnam National University, Daejeon 34134, Republic of Korea
| | - Saul H Lapidus
- Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States
| | - Peter E Siegfried
- Department of Physics and Astronomy, George Mason University, Fairfax, Virginia 22030, United States
- Quantum Science and Engineering Center, George Mason University, Fairfax, Virginia 22030, United States
| | - Nirmal J Ghimire
- Department of Physics and Astronomy and Stavropoulos Center for Complex Quantum Matter, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Xiaoyan Tan
- Department of Chemistry and Biochemistry, George Mason University, Fairfax, Virginia 22030, United States
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17
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Zhang Y, Xu H, Jia K, Lan G, Huang Z, He B, He C, Shao Q, Wang Y, Zhao M, Ma T, Dong J, Guo C, Cheng C, Feng J, Wan C, Wei H, Shi Y, Zhang G, Han X, Yu G. Room temperature field-free switching of perpendicular magnetization through spin-orbit torque originating from low-symmetry type II Weyl semimetal. SCIENCE ADVANCES 2023; 9:eadg9819. [PMID: 37910619 PMCID: PMC10619928 DOI: 10.1126/sciadv.adg9819] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/03/2023] [Accepted: 09/28/2023] [Indexed: 11/03/2023]
Abstract
Spin-orbit torque (SOT) is a promising strategy to deterministically switch the perpendicular magnetization, but usually requires an in-plane magnetic field for breaking the mirror symmetry, which is not suitable for most advanced industrial applications. Van der Waals (vdW) materials with low crystalline symmetry and topological band structures, e.g., Weyl semimetals (WSMs), potentially serve as an outstanding system that may simultaneously realize field-free switching and high energy efficiency. Yet, the demonstration of these superiorities at room temperature has not been realized. Here, we achieve a field-free switching of perpendicular magnetization by using a layered type II WSM, TaIrTe4, in a TaIrTe4/Ti/CoFeB system at room temperature with the critical switching current density ~2.4 × 106 A cm-2. The field-free switching is ascribed to the out-of-plane SOT allowed by the low crystal symmetry. Our work suggests that using low-symmetry materials to generate SOT is a promising route for the manipulation of perpendicular magnetization at room temperature.
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Affiliation(s)
- Yu Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hongjun Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Ke Jia
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Guibin Lan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhiheng Huang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Bin He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Congli He
- Institute of Advanced Materials, Beijing Normal University, Beijing 100875, China
| | - Qiming Shao
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Yizhan Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Mingkun Zhao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Tianyi Ma
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jing Dong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chenyang Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chen Cheng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiafeng Feng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Caihua Wan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Hongxiang Wei
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Youguo Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Xiufeng Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Guoqiang Yu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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18
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Wang N, Kaplan D, Zhang Z, Holder T, Cao N, Wang A, Zhou X, Zhou F, Jiang Z, Zhang C, Ru S, Cai H, Watanabe K, Taniguchi T, Yan B, Gao W. Quantum-metric-induced nonlinear transport in a topological antiferromagnet. Nature 2023; 621:487-492. [PMID: 37385423 DOI: 10.1038/s41586-023-06363-3] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2023] [Accepted: 06/22/2023] [Indexed: 07/01/2023]
Abstract
The Berry curvature and quantum metric are the imaginary part and real part, respectively, of the quantum geometric tensor, which characterizes the topology of quantum states1. The Berry curvature is known to generate a number of important transport phenomena, such as the quantum Hall effect and the anomalous Hall effect2,3; however, the consequences of the quantum metric have rarely been probed by transport measurements. Here we report the observation of quantum-metric-induced nonlinear transport, including both a nonlinear anomalous Hall effect and a diode-like non-reciprocal longitudinal response, in thin films of a topological antiferromagnet, MnBi2Te4. Our observations reveal that the transverse and longitudinal nonlinear conductivities reverse signs when reversing the antiferromagnetic order, diminish above the Néel temperature and are insensitive to disorder scattering, thus verifying their origin in the band-structure topology. They also flip signs between electron- and hole-doped regions, in agreement with theoretical calculations. Our work provides a means to probe the quantum metric through nonlinear transport and to design magnetic nonlinear devices.
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Affiliation(s)
- Naizhou Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Daniel Kaplan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Zhaowei Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Tobias Holder
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Ning Cao
- Low Temperature Physics Laboratory, College of Physics and Center of Quantum Materials and Devices, Chongqing University, Chongqing, China
| | - Aifeng Wang
- Low Temperature Physics Laboratory, College of Physics and Center of Quantum Materials and Devices, Chongqing University, Chongqing, China
| | - Xiaoyuan Zhou
- Low Temperature Physics Laboratory, College of Physics and Center of Quantum Materials and Devices, Chongqing University, Chongqing, China
| | - Feifei Zhou
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Zhengzhi Jiang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Chusheng Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Shihao Ru
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Hongbing Cai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore, Singapore
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel.
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore.
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore, Singapore.
- Centre for Quantum Technologies, National University of Singapore, Singapore, Singapore.
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19
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Gao A, Liu YF, Qiu JX, Ghosh B, V Trevisan T, Onishi Y, Hu C, Qian T, Tien HJ, Chen SW, Huang M, Bérubé D, Li H, Tzschaschel C, Dinh T, Sun Z, Ho SC, Lien SW, Singh B, Watanabe K, Taniguchi T, Bell DC, Lin H, Chang TR, Du CR, Bansil A, Fu L, Ni N, Orth PP, Ma Q, Xu SY. Quantum metric nonlinear Hall effect in a topological antiferromagnetic heterostructure. Science 2023:eadf1506. [PMID: 37319246 DOI: 10.1126/science.adf1506] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/05/2022] [Accepted: 06/06/2023] [Indexed: 06/17/2023]
Abstract
Quantum geometry in condensed matter physics has two components: the real part quantum metric and the imaginary part Berry curvature. Whereas the effects of Berry curvature have been observed through phenomena such as the quantum Hall effect in 2D electron gases and the anomalous Hall effect (AHE) in ferromagnets, quantum metric has rarely been explored. Here, we report a nonlinear Hall effect induced by quantum metric dipole by interfacing even-layered MnBi2Te4 with black phosphorus. The quantum metric nonlinear Hall effect switches direction upon reversing the AFM spins and exhibits distinct scaling that is independent of the scattering time. Our results open the door to discovering quantum metric responses predicted theoretically and pave the way for applications that bridge nonlinear electronics with AFM spintronics.
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Affiliation(s)
- Anyuan Gao
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
| | - Yu-Fei Liu
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
| | - Jian-Xiang Qiu
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
| | - Barun Ghosh
- Department of Physics, Northeastern University, Boston, MA 02115, USA
| | - Thaís V Trevisan
- Department of Physics and Astronomy, Iowa State University, Ames, IA 50011, USA
- Ames National Laboratory, Ames, IA 50011, USA
| | - Yugo Onishi
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Chaowei Hu
- Department of Physics and Astronomy and California NanoSystems Institute, University of California, Los Angeles, Los Angeles, CA 90095, USA
| | - Tiema Qian
- Department of Physics and Astronomy and California NanoSystems Institute, University of California, Los Angeles, Los Angeles, CA 90095, USA
| | - Hung-Ju Tien
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Shao-Wen Chen
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
| | - Mengqi Huang
- Department of Physics, University of California San Diego, La Jolla, CA 92093, USA
| | - Damien Bérubé
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
| | - Houchen Li
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
| | - Christian Tzschaschel
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
| | - Thao Dinh
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
| | - Zhe Sun
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
- Department of Physics, Boston College, Chestnut Hill, MA, USA
| | - Sheng-Chin Ho
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
| | - Shang-Wei Lien
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Bahadur Singh
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Colaba, Mumbai, India
| | - Kenji Watanabe
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - David C Bell
- Harvard John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA
- Center for Nanoscale Systems, Harvard University, Cambridge, MA 02138, USA
| | - Hsin Lin
- Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
| | - Tay-Rong Chang
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Chunhui Rita Du
- Department of Physics, University of California San Diego, La Jolla, CA 92093, USA
| | - Arun Bansil
- Department of Physics, Northeastern University, Boston, MA 02115, USA
| | - Liang Fu
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Ni Ni
- Department of Physics and Astronomy and California NanoSystems Institute, University of California, Los Angeles, Los Angeles, CA 90095, USA
| | - Peter P Orth
- Department of Physics and Astronomy, Iowa State University, Ames, IA 50011, USA
- Ames National Laboratory, Ames, IA 50011, USA
| | - Qiong Ma
- Department of Physics, Boston College, Chestnut Hill, MA, USA
| | - Su-Yang Xu
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
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20
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Wei Y, Yao C, Han L, Zhang L, Chen Z, Wang L, Lu W, Chen X. The Microscopic Mechanisms of Nonlinear Rectification on Si-MOSFETs Terahertz Detector. SENSORS (BASEL, SWITZERLAND) 2023; 23:5367. [PMID: 37420534 DOI: 10.3390/s23125367] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2023] [Revised: 05/26/2023] [Accepted: 06/02/2023] [Indexed: 07/09/2023]
Abstract
Studying the nonlinear photoresponse of different materials, including III-V semiconductors, two-dimensional materials and many others, is attracting burgeoning interest in the terahertz (THz) field. Especially, developing field-effect transistor (FET)-based THz detectors with preferred nonlinear plasma-wave mechanisms in terms of high sensitivity, compactness and low cost is a high priority for advancing performance imaging or communication systems in daily life. However, as THz detectors continue to shrink in size, the impact of the hot-electron effect on device performance is impossible to ignore, and the physical process of THz conversion remains elusive. To reveal the underlying microscopic mechanisms, we have implemented drift-diffusion/hydrodynamic models via a self-consistent finite-element solution to understand the dynamics of carriers at the channel and the device structure dependence. By considering the hot-electron effect and doping dependence in our model, the competitive behavior between the nonlinear rectification and hot electron-induced photothermoelectric effect is clearly presented, and it is found that the optimized source doping concentrations can be utilized to reduce the hot-electron effect on the devices. Our results not only provide guidance for further device optimization but can also be extended to other novel electronic systems for studying THz nonlinear rectification.
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Affiliation(s)
- Yingdong Wei
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Chenyu Yao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Li Han
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No.1 SubLane Xiangshan, Hangzhou 310024, China
| | - Libo Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No.1 SubLane Xiangshan, Hangzhou 310024, China
| | - Zhiqingzi Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Lin Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Wei Lu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No.1 SubLane Xiangshan, Hangzhou 310024, China
| | - Xiaoshuang Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No.1 SubLane Xiangshan, Hangzhou 310024, China
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21
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Lesne E, Saǧlam YG, Battilomo R, Mercaldo MT, van Thiel TC, Filippozzi U, Noce C, Cuoco M, Steele GA, Ortix C, Caviglia AD. Designing spin and orbital sources of Berry curvature at oxide interfaces. NATURE MATERIALS 2023; 22:576-582. [PMID: 36928382 PMCID: PMC10156604 DOI: 10.1038/s41563-023-01498-0] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/02/2022] [Accepted: 01/31/2023] [Indexed: 05/05/2023]
Abstract
Quantum materials can display physical phenomena rooted in the geometry of electronic wavefunctions. The corresponding geometric tensor is characterized by an emergent field known as the Berry curvature (BC). Large BCs typically arise when electronic states with different spin, orbital or sublattice quantum numbers hybridize at finite crystal momentum. In all the materials known to date, the BC is triggered by the hybridization of a single type of quantum number. Here we report the discovery of the first material system having both spin- and orbital-sourced BC: LaAlO3/SrTiO3 interfaces grown along the [111] direction. We independently detect these two sources and probe the BC associated to the spin quantum number through the measurements of an anomalous planar Hall effect. The observation of a nonlinear Hall effect with time-reversal symmetry signals large orbital-mediated BC dipoles. The coexistence of different forms of BC enables the combination of spintronic and optoelectronic functionalities in a single material.
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Affiliation(s)
- Edouard Lesne
- Kavli Institute of Nanoscience, Delft University of Technology, Delft, the Netherlands.
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany.
| | - Yildiz G Saǧlam
- Kavli Institute of Nanoscience, Delft University of Technology, Delft, the Netherlands
| | - Raffaele Battilomo
- Institute for Theoretical Physics, Center for Extreme Matter and Emergent Phenomena, Utrecht University, Utrecht, the Netherlands
| | | | - Thierry C van Thiel
- Kavli Institute of Nanoscience, Delft University of Technology, Delft, the Netherlands
| | - Ulderico Filippozzi
- Kavli Institute of Nanoscience, Delft University of Technology, Delft, the Netherlands
| | - Canio Noce
- Dipartimento di Fisica 'E. R. Caianiello', Universitá di Salerno, Fisciano, Italy
| | - Mario Cuoco
- CNR-SPIN c/o Universita' di Salerno, Fisciano, Italy
| | - Gary A Steele
- Kavli Institute of Nanoscience, Delft University of Technology, Delft, the Netherlands
| | - Carmine Ortix
- Institute for Theoretical Physics, Center for Extreme Matter and Emergent Phenomena, Utrecht University, Utrecht, the Netherlands.
- Dipartimento di Fisica 'E. R. Caianiello', Universitá di Salerno, Fisciano, Italy.
| | - Andrea D Caviglia
- Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland.
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22
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Yokouchi T, Ikeda Y, Morimoto T, Shiomi Y. Giant Magnetochiral Anisotropy in Weyl Semimetal WTe_{2} Induced by Diverging Berry Curvature. PHYSICAL REVIEW LETTERS 2023; 130:136301. [PMID: 37067327 DOI: 10.1103/physrevlett.130.136301] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2022] [Accepted: 03/08/2023] [Indexed: 06/19/2023]
Abstract
The concept of Berry curvature is essential for various transport phenomena. However, an effect of the Berry curvature on magnetochiral anisotropy, i.e., nonreciprocal magnetotransport, is still elusive. Here, we report that the Berry curvature induces the large magnetochiral anisotropy. In Weyl semimetal WTe_{2}, we observe the strong enhancement of the magnetochiral anisotropy when the Fermi level is located near the Weyl points. Notably, the maximal figure of merit γ[over ¯] reaches 1.2×10^{-6} m^{2} T^{-1} A^{-1}, which is the largest ever reported in bulk materials. Our semiclassical calculation shows that the diverging Berry curvature at the Weyl points strongly enhances the magnetochiral anisotropy.
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Affiliation(s)
- Tomoyuki Yokouchi
- Department of Basic Science, The University of Tokyo, Tokyo 152-8902, Japan
| | - Yuya Ikeda
- Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Takahiro Morimoto
- Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Yuki Shiomi
- Department of Basic Science, The University of Tokyo, Tokyo 152-8902, Japan
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23
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Nishijima T, Watanabe T, Sekiguchi H, Ando Y, Shigematsu E, Ohshima R, Kuroda S, Shiraishi M. Ferroic Berry Curvature Dipole in a Topological Crystalline Insulator at Room Temperature. NANO LETTERS 2023; 23:2247-2252. [PMID: 36858796 DOI: 10.1021/acs.nanolett.2c04900] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The physics related to Berry curvature is now a central research topic in condensed matter physics. The Berry curvature dipole (BCD) is a significant and intriguing condensed matter phenomenon that involves inversion symmetry breaking. However, the creation and controllability of BCDs have so far been limited to far below room temperature (RT), and nonvolatile (i.e., ferroic) BCDs have not yet been discovered, hindering further progress in topological physics. In this work, we demonstrate a switchable and nonvolatile BCD effect at RT in a topological crystalline insulator, Pb1-xSnxTe (PST), which is attributed to ferroic distortion. Surprisingly, the magnitude of the ferroic BCD is several orders of magnitude greater than that of the nonferroic BCDs that appear, for example, in transition metal dichalcogenides. The discovery of this ferroic and extraordinarily large BCD in PST could pave the way for further progress in topological materials science and the engineering of novel topological devices.
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Affiliation(s)
- Taiki Nishijima
- Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan
| | - Takuto Watanabe
- Institute of Materials Science, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8573, Japan
| | - Hiroaki Sekiguchi
- Institute of Materials Science, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8573, Japan
| | - Yuichiro Ando
- Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan
- PRESTO, Japan Science and Technology Agency, Honcho, Kawaguchi, Saitama 332-0012, Japan
| | - Ei Shigematsu
- Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan
| | - Ryo Ohshima
- Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan
| | - Shinji Kuroda
- Institute of Materials Science, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8573, Japan
| | - Masashi Shiraishi
- Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto 615-8510, Japan
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24
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Hu Z, Zhang L, Chakraborty A, D'Olimpio G, Fujii J, Ge A, Zhou Y, Liu C, Agarwal A, Vobornik I, Farias D, Kuo CN, Lue CS, Politano A, Wang SW, Hu W, Chen X, Lu W, Wang L. Terahertz Nonlinear Hall Rectifiers Based on Spin-Polarized Topological Electronic States in 1T-CoTe 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209557. [PMID: 36633006 DOI: 10.1002/adma.202209557] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2022] [Revised: 01/04/2023] [Indexed: 06/17/2023]
Abstract
The zero-magnetic-field nonlinear Hall effect (NLHE) refers to the second-order transverse current induced by an applied alternating electric field; it indicates the topological properties of inversion-symmetry-breaking crystals. Despite several studies on the NLHE induced by the Berry-curvature dipole in Weyl semimetals, the direct current conversion by rectification is limited to very low driving frequencies and cryogenic temperatures. The nonlinear photoresponse generated by the NLHE at room temperature can be useful for numerous applications in communication, sensing, and photodetection across a high bandwidth. In this study, observations of the second-order NLHE in type-II Dirac semimetal CoTe2 under time-reversal symmetry are reported. This is determined by the disorder-induced extrinsic contribution on the broken-inversion-symmetry surface and room-temperature terahertz rectification without the need for semiconductor junctions or bias voltage. It is shown that remarkable photoresponsivity over 0.1 A W-1 , a response time of approximately 710 ns, and a mean noise equivalent power of 1 pW Hz-1/2 can be achieved at room temperature. The results open a new pathway for low-energy photon harvesting via nonlinear rectification induced by the NLHE in strongly spin-orbit-coupled and inversion-symmetry-breaking systems, promising a considerable impact in the field of infrared/terahertz photonics.
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Affiliation(s)
- Zhen Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
| | - Libo Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Atasi Chakraborty
- Department of Physics, Indian Institute of Technology Kanpur, Kanpur, 208016, India
| | - Gianluca D'Olimpio
- Department of Physical and Chemical Sciences, University of L'Aquila, via Vetoio, (AQ), 67100, L'Aquila, Italy
| | - Jun Fujii
- Consiglio Nazionale delle Ricerche (CNR)- Istituto Officina dei Materiali (IOM), Laboratorio TASC in Area Science, Park S.S. 14 km 163.5, 34149, Trieste, Italy
| | - Anping Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
| | - Yuanchen Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
| | - Changlong Liu
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Amit Agarwal
- Department of Physics, Indian Institute of Technology Kanpur, Kanpur, 208016, India
| | - Ivana Vobornik
- Consiglio Nazionale delle Ricerche (CNR)- Istituto Officina dei Materiali (IOM), Laboratorio TASC in Area Science, Park S.S. 14 km 163.5, 34149, Trieste, Italy
| | - Daniel Farias
- Departamento de Física de la Materia Condensada and Instituto "Nicolás Cabrera", Universidad Autónoma de Madrid, 28049, Madrid, Spain
- Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, 28049, Madrid, Spain
| | - Chia-Nung Kuo
- Department of Physics, Cheng Kung University, 1 Ta-Hsueh Road, 70101, Tainan, Taiwan, China
| | - Chin Shan Lue
- Department of Physics, Cheng Kung University, 1 Ta-Hsueh Road, 70101, Tainan, Taiwan, China
| | - Antonio Politano
- Department of Physical and Chemical Sciences, University of L'Aquila, via Vetoio, (AQ), 67100, L'Aquila, Italy
| | - Shao-Wei Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Xiaoshuang Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Wei Lu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Lin Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
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25
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Yar A, Sultana R. Nonlinear Hall effect in monolayer phosphorene with broken inversion symmetry. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:165701. [PMID: 36825779 DOI: 10.1088/1361-648x/acbc02] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2022] [Accepted: 02/14/2023] [Indexed: 06/18/2023]
Abstract
Nonlinear Hall effect (NLHE), a new member of the family of Hall effects, in monolayer phosphorene is investigated. We find that phosphorene exhibits pronounced NLHE, arising from the dipole moment of the Berry curvature induced by the proximity effect that breaks the inversion symmetry of the system. Remarkably, the nonlinear Hall response exhibits central minimum with a width on the order of the band gap, followed by two resonance-like peaks. Interestingly, each resonance peak of the Hall response shifts in the negative region of the chemical potential which is consistent with the shift of valence and conduction bands in the energy spectrum of monolayer phosphorene. It is observed that the two peaks are asymmetric, originated from anisotropy in the band structure of phosphorene. It is shown that the NLHE is very sensitive to the band gap and temperature of the system. Moreover, we find that a phase transition occurs in the nonlinear Hall response and nonlinear spin Hall conductivity of the system under the influence of spin-orbit interaction, tuned by the strength of interaction and band gap induced in the energy spectrum of monolayer phosphorene with broken inversion symmetry.
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Affiliation(s)
- Abdullah Yar
- Department of Physics, Kohat University of Science and Technology, Kohat 26000, Khyber Pakhtunkhwa, Pakistan
| | - Rifat Sultana
- Department of Physics, Kohat University of Science and Technology, Kohat 26000, Khyber Pakhtunkhwa, Pakistan
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26
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Min L, Tan H, Xie Z, Miao L, Zhang R, Lee SH, Gopalan V, Liu CX, Alem N, Yan B, Mao Z. Strong room-temperature bulk nonlinear Hall effect in a spin-valley locked Dirac material. Nat Commun 2023; 14:364. [PMID: 36690617 PMCID: PMC9871029 DOI: 10.1038/s41467-023-35989-0] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/03/2022] [Accepted: 01/10/2023] [Indexed: 01/24/2023] Open
Abstract
Nonlinear Hall effect (NLHE) is a new type of Hall effect with wide application prospects. Practical device applications require strong NLHE at room temperature (RT). However, previously reported NLHEs are all low-temperature phenomena except for the surface NLHE of TaIrTe4. Bulk RT NLHE is highly desired due to its ability to generate large photocurrent. Here, we show the spin-valley locked Dirac state in BaMnSb2 can generate a strong bulk NLHE at RT. In the microscale devices, we observe the typical signature of an intrinsic NLHE, i.e. the transverse Hall voltage quadratically scales with the longitudinal current as the current is applied to the Berry curvature dipole direction. Furthermore, we also demonstrate our nonlinear Hall device's functionality in wireless microwave detection and frequency doubling. These findings broaden the coupled spin and valley physics from 2D systems into a 3D system and lay a foundation for exploring bulk NLHE's applications.
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Affiliation(s)
- Lujin Min
- grid.29857.310000 0001 2097 4281Department of Physics, Pennsylvania State University, University Park, PA USA ,grid.29857.310000 0001 2097 4281Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA USA
| | - Hengxin Tan
- grid.13992.300000 0004 0604 7563Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Zhijian Xie
- grid.266860.c0000 0001 0671 255XDepartment of Electrical and Computer Engineering, North Carolina Agriculture &Technical State University, Greensboro, NC USA
| | - Leixin Miao
- grid.29857.310000 0001 2097 4281Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA USA
| | - Ruoxi Zhang
- grid.29857.310000 0001 2097 4281Department of Physics, Pennsylvania State University, University Park, PA USA
| | - Seng Huat Lee
- grid.29857.310000 0001 2097 4281Department of Physics, Pennsylvania State University, University Park, PA USA ,grid.29857.310000 0001 2097 42812D Crystal Consortium, Materials Research Institute, Pennsylvania State University, University Park, PA USA
| | - Venkatraman Gopalan
- grid.29857.310000 0001 2097 4281Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA USA
| | - Chao-Xing Liu
- grid.29857.310000 0001 2097 4281Department of Physics, Pennsylvania State University, University Park, PA USA
| | - Nasim Alem
- grid.29857.310000 0001 2097 4281Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA USA
| | - Binghai Yan
- grid.13992.300000 0004 0604 7563Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Zhiqiang Mao
- grid.29857.310000 0001 2097 4281Department of Physics, Pennsylvania State University, University Park, PA USA ,grid.29857.310000 0001 2097 4281Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA USA ,grid.29857.310000 0001 2097 42812D Crystal Consortium, Materials Research Institute, Pennsylvania State University, University Park, PA USA
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27
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Wei M, Wang L, Wang B, Xiang L, Xu F, Wang B, Wang J. Quantum Fluctuation of the Quantum Geometric Tensor and Its Manifestation as Intrinsic Hall Signatures in Time-Reversal Invariant Systems. PHYSICAL REVIEW LETTERS 2023; 130:036202. [PMID: 36763382 DOI: 10.1103/physrevlett.130.036202] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2021] [Accepted: 12/13/2022] [Indexed: 06/18/2023]
Abstract
In time-reversal invariant systems, all charge Hall effects predicted so far are extrinsic effects due to the dependence on the relaxation time. We explore intrinsic Hall signatures by studying the quantum noise spectrum of the Hall current in time-reversal invariant systems, and discover intrinsic thermal Hall noises in both linear and nonlinear regimes. As the band geometric characteristics, quantum geometric tensor and Berry curvature play critical roles in various Hall effects; so do their quantum fluctuations. It is found that the thermal Hall noise in linear order of the electric field is purely intrinsic, and the second-order thermal Hall noise has both intrinsic and extrinsic contributions. In particular, the intrinsic part of the second-order thermal Hall noise is a manifestation of the quantum fluctuation of the quantum geometric tensor, which widely exists as long as Berry curvature is nonzero. These intrinsic thermal Hall noises provide direct measurable means to band geometric information, including Berry curvature related quantities and quantum fluctuation of quantum geometric tensor.
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Affiliation(s)
- Miaomiao Wei
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Luyang Wang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Bin Wang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Longjun Xiang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Fuming Xu
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Baigeng Wang
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center for Advanced Microstructures, Nanjing 210093, China
| | - Jian Wang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
- Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China
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28
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Ye XG, Liu H, Zhu PF, Xu WZ, Yang SA, Shang N, Liu K, Liao ZM. Control over Berry Curvature Dipole with Electric Field in WTe_{2}. PHYSICAL REVIEW LETTERS 2023; 130:016301. [PMID: 36669212 DOI: 10.1103/physrevlett.130.016301] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2022] [Revised: 09/28/2022] [Accepted: 12/18/2022] [Indexed: 06/17/2023]
Abstract
Berry curvature dipole plays an important role in various nonlinear quantum phenomena. However, the maximum symmetry allowed for nonzero Berry curvature dipole in the transport plane is a single mirror line, which strongly limits its effects in materials. Here, via probing the nonlinear Hall effect, we demonstrate the generation of Berry curvature dipole by applied dc electric field in WTe_{2}, which is used to break the symmetry constraint. A linear dependence between the dipole moment of Berry curvature and the dc electric field is observed. The polarization direction of the Berry curvature is controlled by the relative orientation of the electric field and crystal axis, which can be further reversed by changing the polarity of the dc field. Our Letter provides a route to generate and control Berry curvature dipole in broad material systems and to facilitate the development of nonlinear quantum devices.
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Affiliation(s)
- Xing-Guo Ye
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Huiying Liu
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, 487372, Singapore
| | - Peng-Fei Zhu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Wen-Zheng Xu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Shengyuan A Yang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, 487372, Singapore
| | - Nianze Shang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Zhi-Min Liao
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
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29
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Cheng L, Xiong Y, Kang L, Gao Y, Chang Q, Chen M, Qi J, Yang H, Liu Z, Song JC, Chia EE. Giant photon momentum locked THz emission in a centrosymmetric Dirac semimetal. SCIENCE ADVANCES 2023; 9:eadd7856. [PMID: 36598995 PMCID: PMC9812375 DOI: 10.1126/sciadv.add7856] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/29/2022] [Accepted: 11/28/2022] [Indexed: 06/17/2023]
Abstract
Strong second-order optical nonlinearities often require broken material centrosymmetry, thereby limiting the type and quality of materials used for nonlinear optical devices. Here, we report a giant and highly tunable terahertz (THz) emission from thin polycrystalline films of the centrosymmetric Dirac semimetal PtSe2. Our PtSe2 THz emission is turned on at oblique incidence and locked to the photon momentum of the incident pump beam. Notably, we find an emitted THz efficiency that is giant: It is two orders of magnitude larger than the standard THz-generating nonlinear crystal ZnTe and has values approaching that of the noncentrosymmetric topological material TaAs. Further, PtSe2 THz emission displays THz sign and amplitude that is controlled by the incident pump polarization and helicity state even as optical absorption is only weakly polarization dependent and helicity independent. Our work demonstrates how photon drag can activate pronounced optical nonlinearities that are available even in centrosymmetric Dirac materials.
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Affiliation(s)
- Liang Cheng
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Ying Xiong
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Lixing Kang
- Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Yu Gao
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Qing Chang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Mengji Chen
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
| | - Jingbo Qi
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Hyunsoo Yang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 637371, Singapore
| | - Justin C.W. Song
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Elbert E. M. Chia
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
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30
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Zhang G, Wu H, Zhang L, Yang L, Xie Y, Guo F, Li H, Tao B, Wang G, Zhang W, Chang H. Two-Dimensional Van Der Waals Topological Materials: Preparation, Properties, and Device Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2204380. [PMID: 36135779 DOI: 10.1002/smll.202204380] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2022] [Revised: 08/23/2022] [Indexed: 06/16/2023]
Abstract
Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including topological insulators and topological semimetals, which combine atomically flat 2D layers and topologically nontrivial band structures, have attracted increasing attention in condensed-matter physics and materials science. These easily cleavable and integrated TMs provide the ideal platform for exploring topological physics in the 2D limit, where new physical phenomena may emerge, and represent a potential to control and investigate exotic properties and device applications in nanoscale topological phases. However, multifaced efforts are still necessary, which is the prerequisite for the practical application of 2D vdW TMs. Herein, this review focuses on the preparation, properties, and device applications of 2D vdW TMs. First, three common preparation strategies for 2D vdW TMs are summarized, including single crystal exfoliation, chemical vapor deposition, and molecular beam epitaxy. Second, the origin and regulation of various properties of 2D vdW TMs are introduced, involving electronic properties, transport properties, optoelectronic properties, thermoelectricity, ferroelectricity, and magnetism. Third, some device applications of 2D vdW TMs are presented, including field-effect transistors, memories, spintronic devices, and photodetectors. Finally, some significant challenges and opportunities for the practical application of 2D vdW TMs in 2D topological electronics are briefly addressed.
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Affiliation(s)
- Gaojie Zhang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hao Wu
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Liang Zhang
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Li Yang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yuanmiao Xie
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Fei Guo
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Hongda Li
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Boran Tao
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Guofu Wang
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Wenfeng Zhang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen, 518000, China
| | - Haixin Chang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen, 518000, China
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31
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Duan J, Jian Y, Gao Y, Peng H, Zhong J, Feng Q, Mao J, Yao Y. Giant Second-Order Nonlinear Hall Effect in Twisted Bilayer Graphene. PHYSICAL REVIEW LETTERS 2022; 129:186801. [PMID: 36374703 DOI: 10.1103/physrevlett.129.186801] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2022] [Revised: 08/08/2022] [Accepted: 09/30/2022] [Indexed: 06/16/2023]
Abstract
In the second-order response regime, the Hall voltage can be nonzero without time-reversal symmetry breaking but inversion symmetry breaking. Multiple mechanisms contribute to the nonlinear Hall effect. The disorder-related contributions can enter the NLHE in the leading role, but experimental investigations are scarce, especially the exploration of the contributions from different disorder sources. Here, we report a giant nonlinear response in twisted bilayer graphene, dominated by disorder-induced skew scattering. The magnitude and direction of the second-order nonlinearity can be effectively tuned by the gate voltage. A peak value of the second-order Hall conductivity reaching 8.76 μm SV^{-1} is observed close to the full filling of the moiré band, four order larger than the intrinsic contribution detected in WTe_{2}. The scaling shows that the giant second-order nonlinear Hall effect in twisted bilayer graphene stems from the collaboration of the static (impurities) and dynamic (phonons) disorders. It is mainly determined by the impurity skew scattering at 1.7 K. The phonon skew scattering, however, has a much larger coupling coefficient, and becomes comparable to the impurity contribution as the temperature rises. Our observations provide a comprehensive experimental understanding of the disorder-related mechanisms in the nonlinear Hall effect.
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Affiliation(s)
- Junxi Duan
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Yu Jian
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Yang Gao
- Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Huimin Peng
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Jinrui Zhong
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Qi Feng
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Jinhai Mao
- School of Physical Sciences and CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yugui Yao
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
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32
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Ding Y, Wang X, Liao L, Cheng X, Zhang J, Wang Y, Ying H, Li Y. Strain modulation of photocurrent in Weyl semimetal TaIrTe 4. OPTICS LETTERS 2022; 47:4881-4884. [PMID: 36181141 DOI: 10.1364/ol.466325] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/10/2022] [Accepted: 08/22/2022] [Indexed: 06/16/2023]
Abstract
We study the effect of the strain on the energy bands of a TaIrTe4 sheet and the photocurrent in the Cu-TaIrTe4-Cu heterojunction by using the quantum transport simulations. It is found that the Weyl points can be completely broken with an increase of the strain along the z direction. One can obtain a large photocurrent in the Cu-TaIrTe4-Cu heterojunction in the absence of the strain; while the photocurrent can be sharply enhanced by the strain and reach a large value. Accordingly, the maximum values of the photocurrent can be explained in terms of the transitions between peaks of density of states and band structures. The strain-induced energy bands and photocurrent exhibit anisotropic behaviors. Our results provide a novel, to the best of our knkowledge, route to effectively modulate the energy bands and the photocurrent by utilizing mechanical methods for TaIrTe4-based devices.
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33
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Guo C, Chen Z, Yu X, Zhang L, Wang X, Chen X, Wang L. Ultrasensitive Anisotropic Room-Temperature Terahertz Photodetector Based on an Intrinsic Magnetic Topological Insulator MnBi 2Te 4. NANO LETTERS 2022; 22:7492-7498. [PMID: 36094834 DOI: 10.1021/acs.nanolett.2c02434] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Terahertz photodetectors based on emergent intrinsic magnetic topological insulators promise excellent performance in terms of highly sensitive, anisotropic and room-temperature ability benefiting from their extraordinary material properties. Here, we propose and conceive the response features of exfoliated MnBi2Te4 flakes as active materials for terahertz detectors. The MnBi2Te4-based photodetectors show the sensitivity rival with commercially available ones, and the noise equivalent power of 13 pW/Hz0.5 under 0.275 THz at room-temperature led by the nonlinear Hall effect, allowing for the high-resolution terahertz imaging. In addition, a large anisotropy of polarization-dependent terahertz response is observed when the MnBi2Te4 device is tuned into different directions. More interestingly, we discover an unprecedented power-controlled reversal of terahertz response in the MnBi2Te4-graphene device. Our results provide feasibility of manipulating and exploiting the nontrivial topological phenomena of MnBi2Te4 under a high-frequency electromagnetic field, representing the first step toward device implementation of intrinsic magnetic topological insulators.
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Affiliation(s)
- Cheng Guo
- Research Center for Intelligent Networks, Zhejiang Lab, Hangzhou 311121, China
| | - Zhiqingzi Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai 200083, China
| | - Xianbin Yu
- Research Center for Intelligent Networks, Zhejiang Lab, Hangzhou 311121, China
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
| | - Libo Zhang
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Xueyan Wang
- Department of Physics, Shanghai Normal University, 100 Guilin Rd, Shanghai 200234, China
| | - Xiaoshuang Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai 200083, China
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Lin Wang
- Research Center for Intelligent Networks, Zhejiang Lab, Hangzhou 311121, China
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai 200083, China
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Ma T, Chen H, Yananose K, Zhou X, Wang L, Li R, Zhu Z, Wu Z, Xu QH, Yu J, Qiu CW, Stroppa A, Loh KP. Growth of bilayer MoTe2 single crystals with strong non-linear Hall effect. Nat Commun 2022; 13:5465. [PMID: 36115861 PMCID: PMC9482631 DOI: 10.1038/s41467-022-33201-3] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/04/2022] [Accepted: 09/06/2022] [Indexed: 11/10/2022] Open
Abstract
The reduced symmetry in strong spin-orbit coupling materials such as transition metal ditellurides (TMDTs) gives rise to non-trivial topology, unique spin texture, and large charge-to-spin conversion efficiencies. Bilayer TMDTs are non-centrosymmetric and have unique topological properties compared to monolayer or trilayer, but a controllable way to prepare bilayer MoTe2 crystal has not been achieved to date. Herein, we achieve the layer-by-layer growth of large-area bilayer and trilayer 1T′ MoTe2 single crystals and centimetre-scale films by a two-stage chemical vapor deposition process. The as-grown bilayer MoTe2 shows out-of-plane ferroelectric polarization, whereas the monolayer and trilayer crystals are non-polar. In addition, we observed large in-plane nonlinear Hall (NLH) effect for the bilayer and trilayer Td phase MoTe2 under time reversal-symmetric conditions, while these vanish for thicker layers. For a fixed input current, bilayer Td MoTe2 produces the largest second harmonic output voltage among the thicker crystals tested. Our work therefore highlights the importance of thickness-dependent Berry curvature effects in TMDTs that are underscored by the ability to grow thickness-precise layers. 2D transition metal ditellurides exhibit nontrivial topological phases, but the controlled bottom-up synthesis of these materials is still challenging. Here, the authors report the layer-by-layer growth of large-area bilayer and trilayer 1T’ MoTe2 films, showing thickness-dependent ferroelectricity and nonlinear Hall effect.
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Roy S, Narayan A. Non-linear Hall effect in multi-Weyl semimetals. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:385301. [PMID: 35820408 DOI: 10.1088/1361-648x/ac8091] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2022] [Accepted: 07/12/2022] [Indexed: 06/15/2023]
Abstract
In the presence of time reversal symmetry, a non-linear Hall effect can occur in systems without an inversion symmetry. One of the prominent candidates for detection of such Hall signals are Weyl semimetals. In this article, we investigate the Berry curvature induced second and third order Hall effect in multi-Weyl semimetals with topological chargesn=1,2,3. We use low energy effective models to obtain general analytical expressions and discover the presence of a large Berry curvature dipole (BCD) in multi-Weyl semimetals, compared to usual (n = 1) Weyl semimetals. We also study the BCD in a realistic tight-binding lattice model and observe two different kinds of variation with increasing topological charge-these can be attributed to different underlying Berry curvature components. We provide estimates of the signatures of second harmonic of Hall signal in multi-Weyl semimetals, which can be detected experimentally. Furthermore, we predict the existence of a third order Hall signal in multi-Weyl semimetals. We derive the analytical expressions of Berry connection polarizability tensor, which is responsible for third order effects, using a low energy model and estimate the measurable conductivity. Our work can help guide experimental discovery of Berry curvature multipole physics in multi-Weyl semimetals.
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Affiliation(s)
- Saswata Roy
- Undergraduate Programme, Indian Institute of Science, Bangalore 560012, India
| | - Awadhesh Narayan
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560012, India
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36
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He P, Koon GKW, Isobe H, Tan JY, Hu J, Neto AHC, Fu L, Yang H. Graphene moiré superlattices with giant quantum nonlinearity of chiral Bloch electrons. NATURE NANOTECHNOLOGY 2022; 17:378-383. [PMID: 35115723 DOI: 10.1038/s41565-021-01060-6] [Citation(s) in RCA: 21] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2021] [Accepted: 11/24/2021] [Indexed: 06/14/2023]
Abstract
Graphene-based samples have shown a plethora of exotic characteristics and these properties may help the realization of a new generation of fast electronic devices. However, graphene's centrosymmetry prohibits second-order electronic transport. Here, we show giant second-order nonlinear transports in graphene moiré superlattices at zero magnetic field, both longitudinal and transverse to the applied current direction. High carrier mobility and inversion symmetry breaking by hexagonal boron nitride lead to nonlinear conductivities five orders of magnitude larger than those in WTe2. The nonlinear conductivity strongly depends on the gate voltage as well as on the stacking configuration, with a giant enhancement originating from the moiré bands. Longitudinal nonlinear conductivity cannot originate from Berry curvature dipoles. Our theoretical modelling highlights skew scattering of chiral Bloch electrons as the physical origin. With these results, we demonstrate nonlinear charge transport due to valley-contrasting chirality, which constitutes an alternative means to induce second-order transports in van der Waals heterostructures. Our approach is promising for applications in frequency-doubling and energy harvesting via rectification.
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Affiliation(s)
- Pan He
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, China.
- Shanghai Qi Zhi Institute, Shanghai, China.
| | - Gavin Kok Wai Koon
- Centre for Advanced 2D Materials, National University of Singapore, Singapore, Singapore
| | - Hiroki Isobe
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Applied Physics, The University of Tokyo, Tokyo, Japan
| | - Jun You Tan
- Centre for Advanced 2D Materials, National University of Singapore, Singapore, Singapore
| | - Junxiong Hu
- Centre for Advanced 2D Materials, National University of Singapore, Singapore, Singapore
- Department of Physics, National University of Singapore, Singapore, Singapore
| | - Antonio H Castro Neto
- Centre for Advanced 2D Materials, National University of Singapore, Singapore, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Liang Fu
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Hyunsoo Yang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
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Giant second harmonic transport under time-reversal symmetry in a trigonal superconductor. Nat Commun 2022; 13:1659. [PMID: 35351870 PMCID: PMC8964720 DOI: 10.1038/s41467-022-29314-4] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/18/2021] [Accepted: 03/02/2022] [Indexed: 11/12/2022] Open
Abstract
Nonreciprocal or even-order nonlinear responses in symmetry-broken systems are powerful probes of emergent properties in quantum materials, including superconductors, magnets, and topological materials. Recently, vortex matter has been recognized as a key ingredient of giant nonlinear responses in superconductors with broken inversion symmetry. However, nonlinear effects have been probed as excess voltage only under broken time-reversal symmetry. In this study, we report second harmonic transport under time-reversal symmetry in the noncentrosymmetric trigonal superconductor PbTaSe2. The magnitude of anomalous nonlinear transport is two orders of magnitude larger than those in the normal state, and the directional dependence of nonlinear signals are fully consistent with crystal symmetry. The enhanced nonlinearity is semiquantitatively explained by the asymmetric Hall effect of vortex-antivortex string pairs in noncentrosymmetric systems. This study enriches the literature on nonlinear phenomena by elucidating quantum transport in noncentrosymmetric superconductors. Even-order nonlinear transport is a powerful probe of quantum materials, but such studies in superconductors have been limited to those which break time-reversal symmetry. Here, the authors observe second-order nonlinear transport in time-reversal-symmetric PbTaSe2, where the nonlinearity is enhanced in the superconducting state.
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38
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Wang C, Xiao RC, Liu H, Zhang Z, Lai S, Zhu C, Cai H, Wang N, Chen S, Deng Y, Liu Z, Yang SA, Gao WB. Room-temperature third-order nonlinear Hall effect in Weyl semimetal TaIrTe 4. Natl Sci Rev 2022; 9:nwac020. [PMID: 36694799 PMCID: PMC9869080 DOI: 10.1093/nsr/nwac020] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/22/2021] [Revised: 01/14/2022] [Accepted: 01/16/2022] [Indexed: 01/27/2023] Open
Abstract
The second-order nonlinear Hall effect observed in the time-reversal symmetric system has not only shown abundant physical content, but also exhibited potential application prospects. Recently, a third-order nonlinear Hall effect has been observed in MoTe2 and WTe2. However, few-layer MoTe2 and WTe2 are usually unstable in air and the observed third-order nonlinear Hall effect can be measured only at low temperature, which hinders further investigation as well as potential application. Thus, exploring new air-stable material systems with a sizable third-order nonlinear Hall effect at room temperature is an urgent task. Here, in type-II Weyl semimetal TaIrTe4, we observed a pronounced third-order nonlinear Hall effect, which can exist at room temperature and remain stable for months. The third-order nonlinear Hall effect is connected to the Berry-connection polarizability tensor instead of the Berry curvature. The possible mechanism of the observation of the third-order nonlinear Hall effect in TaIrTe4 at room temperature has been discussed. Our findings will open an avenue towards exploring room-temperature nonlinear devices in new quantum materials.
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Affiliation(s)
| | | | - Huiying Liu
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore487372, Singapore
| | - Zhaowei Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore637371, Singapore
| | - Shen Lai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore637371, Singapore
| | - Chao Zhu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore639798, Singapore
| | - Hongbing Cai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore637371, Singapore
| | - Naizhou Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore637371, Singapore
| | - Shengyao Chen
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing100190, China
| | - Ya Deng
- School of Materials Science and Engineering, Nanyang Technological University, Singapore639798, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore639798, Singapore
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Kiswandhi A, Osada T. Observation of possible nonlinear anomalous Hall effect in organic two-dimensional Dirac fermion system. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:105602. [PMID: 34874281 DOI: 10.1088/1361-648x/ac3fd5] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2021] [Accepted: 12/03/2021] [Indexed: 06/13/2023]
Abstract
We report the observation of nonlinear anomalous Hall effect (NLAHE) in the multilayered organic conductor α-(BEDT-TTF)2I3in the charge order (CO) insulating phase just under the critical pressure for transition into two-dimensional (2D) massless Dirac fermion (DF) phase. We successfully extracted the finite nonlinear Hall voltage proportional to square current at zero magnetic field. The observed NLAHE features, current direction dependence and correlation with CO, are consistent with the previous estimation assuming 2D massive DF with a pair of tilted Dirac cones. This is the first observation of topological transport in organic conductors, and also the first example of NLAHE in the electronic phase with spontaneous symmetry breaking.
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Affiliation(s)
- Andhika Kiswandhi
- Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
| | - Toshihito Osada
- Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
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40
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Nonlinear nanoelectrodynamics of a Weyl metal. Proc Natl Acad Sci U S A 2021; 118:2116366118. [PMID: 34819380 DOI: 10.1073/pnas.2116366118] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Accepted: 10/25/2021] [Indexed: 11/18/2022] Open
Abstract
Chiral Weyl fermions with linear energy-momentum dispersion in the bulk accompanied by Fermi-arc states on the surfaces prompt a host of enticing optical effects. While new Weyl semimetal materials keep emerging, the available optical probes are limited. In particular, isolating bulk and surface electrodynamics in Weyl conductors remains a challenge. We devised an approach to the problem based on near-field photocurrent imaging at the nanoscale and applied this technique to a prototypical Weyl semimetal TaIrTe4 As a first step, we visualized nano-photocurrent patterns in real space and demonstrated their connection to bulk nonlinear conductivity tensors through extensive modeling augmented with density functional theory calculations. Notably, our nanoscale probe gives access to not only the in-plane but also the out-of-plane electric fields so that it is feasible to interrogate all allowed nonlinear tensors including those that remained dormant in conventional far-field optics. Surface- and bulk-related nonlinear contributions are distinguished through their "symmetry fingerprints" in the photocurrent maps. Robust photocurrents also appear at mirror-symmetry breaking edges of TaIrTe4 single crystals that we assign to nonlinear conductivity tensors forbidden in the bulk. Nano-photocurrent spectroscopy at the boundary reveals a strong resonance structure absent in the interior of the sample, providing evidence for elusive surface states.
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41
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Matsyshyn O, Piazza F, Moessner R, Sodemann I. Rabi Regime of Current Rectification in Solids. PHYSICAL REVIEW LETTERS 2021; 127:126604. [PMID: 34597109 DOI: 10.1103/physrevlett.127.126604] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2021] [Revised: 06/29/2021] [Accepted: 08/26/2021] [Indexed: 06/13/2023]
Abstract
We investigate rectified currents in response to oscillating electric fields in systems lacking inversion and time-reversal symmetries. These currents, in second-order perturbation theory, are inversely proportional to the relaxation rate, and, therefore, naively diverge in the ideal clean limit. Employing a combination of the nonequilibrium Green function technique and Floquet theory, we show that this is an artifact of perturbation theory, and that there is a well-defined periodic steady state akin to Rabi oscillations leading to finite rectified currents in the limit of weak coupling to a thermal bath. In this Rabi regime the rectified current scales as the square root of the radiation intensity, in contrast with the linear scaling of the perturbative regime, allowing us to readily diagnose it in experiments. More generally, our description provides a smooth interpolation from the ideal periodic Gibbs ensemble describing the Rabi oscillations of a closed system to the perturbative regime of rapid relaxation due to strong coupling to a thermal bath.
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Affiliation(s)
- Oles Matsyshyn
- Max Planck Institute for the Physics of Complex Systems, Dresden 01187, Germany
| | - Francesco Piazza
- Max Planck Institute for the Physics of Complex Systems, Dresden 01187, Germany
| | - Roderich Moessner
- Max Planck Institute for the Physics of Complex Systems, Dresden 01187, Germany
| | - Inti Sodemann
- Max Planck Institute for the Physics of Complex Systems, Dresden 01187, Germany
- Department of Physics and Astronomy, University of California, Irvine, California 92697, USA
- Institut für Theoretische Physik, Universität Leipzig, D-04103 Leipzig, Germany
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42
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Du ZZ, Wang CM, Sun HP, Lu HZ, Xie XC. Quantum theory of the nonlinear Hall effect. Nat Commun 2021; 12:5038. [PMID: 34413295 PMCID: PMC8377135 DOI: 10.1038/s41467-021-25273-4] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/15/2020] [Accepted: 07/28/2021] [Indexed: 02/07/2023] Open
Abstract
The nonlinear Hall effect is an unconventional response, in which a voltage can be driven by two perpendicular currents in the Hall-bar measurement. Unprecedented in the family of the Hall effects, it can survive time-reversal symmetry but is sensitive to the breaking of discrete and crystal symmetries. It is a quantum transport phenomenon that has deep connection with the Berry curvature. However, a full quantum description is still absent. Here we construct a quantum theory of the nonlinear Hall effect by using the diagrammatic technique. Quite different from nonlinear optics, nearly all the diagrams account for the disorder effects, which play decisive role in the electronic transport. After including the disorder contributions in terms of the Feynman diagrams, the total nonlinear Hall conductivity is enhanced but its sign remains unchanged for the 2D tilted Dirac model, compared to the one with only the Berry curvature contribution. We discuss the symmetry of the nonlinear conductivity tensor and predict a pure disorder-induced nonlinear Hall effect for point groups C3, C3h, C3v, D3h, D3 in 2D, and T, Td, C3h, D3h in 3D. This work will be helpful for explorations of the topological physics beyond the linear regime.
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Affiliation(s)
- Z Z Du
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen, China
| | - C M Wang
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen, China
- Department of Physics, Shanghai Normal University, Shanghai, China
| | - Hai-Peng Sun
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen, China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen, China
| | - Hai-Zhou Lu
- Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen, China.
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen, China.
| | - X C Xie
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing, China
- Beijing Academy of Quantum Information Sciences, Beijing, China
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43
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Shipunov G, Piening BR, Wuttke C, Romanova TA, Sadakov AV, Sobolevskiy OA, Guzovsky EY, Usoltsev AS, Pudalov VM, Efremov DV, Subakti S, Wolf D, Lubk A, Büchner B, Aswartham S. Layered van der Waals Topological Metals of TaTMTe 4 (TM = Ir, Rh, Ru) Family. J Phys Chem Lett 2021; 12:6730-6735. [PMID: 34264086 DOI: 10.1021/acs.jpclett.1c01648] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Layered van der Waals materials of the family TaTMTe4 (TM = Ir, Rh, Ru) are showing interesting electronic properties. We report the growth and characterization of TaIrTe4, TaRhTe4, TaIr1-xRhxTe4 (x = 0.06, 0.14, 0.78, 0.92), Ta1+xRu1-xTe4 single crystals. X-ray powder diffraction confirms that TaRhTe4 is isostructural to TaIrTe4. All these compounds are metallic with diamagnetic behavior. Below T ≈ 4 K we observed signatures of the superconductivity in the TaIr1-xRhxTe4 compounds for x = 0.92. All samples show weak quadratic-in-field magnetoresistance (MR). However, for TaIr1-xRhxTe4 with x ≈ 0.78, the MR has a linear term dominating in low fields that indicates the presence of Dirac cones in the vicinity of the Fermi energy. For TaRhTe4 series the MR is almost isotropic. Electronic structure calculations for TaIrTe4 and TaRhTe4 reveal appearance of the Rh band close to the Fermi level.
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Affiliation(s)
- G Shipunov
- Institute for Solid State Research, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
| | - B R Piening
- Institute for Solid State Research, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
| | - C Wuttke
- Institute for Solid State Research, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
| | - T A Romanova
- P. N. Lebedev Physical Institute, Russian Academy of Sciences, 119991 Moscow, Russia
| | - A V Sadakov
- P. N. Lebedev Physical Institute, Russian Academy of Sciences, 119991 Moscow, Russia
| | - O A Sobolevskiy
- P. N. Lebedev Physical Institute, Russian Academy of Sciences, 119991 Moscow, Russia
| | - E Yu Guzovsky
- P. N. Lebedev Physical Institute, Russian Academy of Sciences, 119991 Moscow, Russia
| | - A S Usoltsev
- P. N. Lebedev Physical Institute, Russian Academy of Sciences, 119991 Moscow, Russia
| | - V M Pudalov
- P. N. Lebedev Physical Institute, Russian Academy of Sciences, 119991 Moscow, Russia
| | - D V Efremov
- Institute for Solid State Research, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
| | - S Subakti
- Institute for Solid State Research, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
| | - D Wolf
- Institute for Solid State Research, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
| | - A Lubk
- Institute for Solid State Research, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
| | - B Büchner
- Institute for Solid State Research, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
- Institute of Solid State and Materials Physics, Technische Universität Dresden, 01062 Dresden, Germany
- Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität Dresden, 01062 Dresden, Germany
| | - S Aswartham
- Institute for Solid State Research, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
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Yao J, Yang G. Multielement 2D layered material photodetectors. NANOTECHNOLOGY 2021; 32:392001. [PMID: 34111857 DOI: 10.1088/1361-6528/ac0a16] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2021] [Accepted: 06/10/2021] [Indexed: 06/12/2023]
Abstract
The pronounced quantum confinement effects, outstanding mechanical strength, strong light-matter interactions and reasonably high electric transport properties under atomically thin limit have conjointly established 2D layered materials (2DLMs) as compelling building blocks towards the next generation optoelectronic devices. By virtue of the diverse compositions and crystal structures which bring about abundant physical properties, multielement 2DLMs (ME2DLMs) have become a bran-new research focus of tremendous scientific enthusiasm. Herein, for the first time, this review provides a comprehensive overview on the latest evolution of ME2DLM photodetectors. The crystal structures, synthesis, and physical properties of various experimentally realized ME2DLMs as well as the development in metal-semiconductor-metal photodetectors are comprehensively summarized by dividing them into narrow-bandgap ME2DLMs (including Bi2O2X (X = S, Se, Te), EuMTe3(M = Bi, Sb), Nb2XTe4(X = Si, Ge), Ta2NiX5(X = S, Se), M2PdX6(M = Ta, Nb; X = S, Se), PbSnS2), moderate-bandgap ME2DLMs (including CuIn7Se11, CuTaS3, GaGeTe, TlMX2(M = Ga, In; X = S, Se)), wide-bandgap ME2DLMs (including BiOX (X = F, Cl, Br, I), MPX3(M = Fe, Ni, Mn, Cd, Zn; X = S, Se), ABP2X6(A = Cu, Ag; B = In, Bi; X = S, Se), Ga2In4S9), as well as topological ME2DLMs (MIrTe4(M = Ta, Nb)). In the last section, the ongoing challenges standing in the way of further development are underscored and the potential strategies settling them are proposed, which is aimed at navigating the future advancement of this fascinating domain.
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Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, People's Republic of China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, People's Republic of China
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45
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Zhang Y, Fu L. Terahertz detection based on nonlinear Hall effect without magnetic field. Proc Natl Acad Sci U S A 2021; 118:e2100736118. [PMID: 34001618 PMCID: PMC8166175 DOI: 10.1073/pnas.2100736118] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
We propose a method for broadband long-wavelength photodetection using the nonlinear Hall effect in noncentrosymmetric quantum materials. The inherently quadratic relation between transverse current and input voltage at zero magnetic field is used to rectify the incident terahertz or infrared electric field into a direct current, without invoking any diode. Our photodetector operates at zero external bias with fast response speed and has zero threshold voltage. Remarkably, the intrinsic current responsivity due to the Berry curvature mechanism is a material property independent of the incident frequency or the scattering rate, which can be evaluated from first-principles electronic structure calculations. We identify the Weyl semimetal NbP and ferroelectric semiconductor GeTe for terahertz/infrared photodetection with large current responsivity without external bias.
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Affiliation(s)
- Yang Zhang
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139
| | - Liang Fu
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139
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