1
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Datta S, Bhowmik S, Varshney H, Watanabe K, Taniguchi T, Agarwal A, Chandni U. Nonlinear Electrical Transport Unveils Fermi Surface Malleability in a Moiré Heterostructure. NANO LETTERS 2024; 24:9520-9527. [PMID: 39058474 DOI: 10.1021/acs.nanolett.4c01946] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/28/2024]
Abstract
Van Hove singularities enhance many-body interactions and induce collective states of matter ranging from superconductivity to magnetism. In magic-angle twisted bilayer graphene, van Hove singularities appear at low energies and are malleable with density, leading to a sequence of Lifshitz transitions and resets observable in Hall measurements. However, without a magnetic field, linear transport measurements have limited sensitivity to the band's topology. Here, we utilize nonlinear longitudinal and transverse transport measurements to probe these unique features in twisted bilayer graphene at zero magnetic field. We demonstrate that the nonlinear responses, induced by the Berry curvature dipole and extrinsic scattering processes, intricately map the Fermi surface reconstructions at various fillings. Importantly, our experiments highlight the intrinsic connection of these features with the moiré bands. Beyond corroborating the insights from linear Hall measurements, our findings establish nonlinear transport as a pivotal tool for probing band topology and correlated phenomena.
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Affiliation(s)
- Suvronil Datta
- Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012, India
| | - Saisab Bhowmik
- Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012, India
| | - Harsh Varshney
- Department of Physics, Indian Institute of Technology, Kanpur 208016, India
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Amit Agarwal
- Department of Physics, Indian Institute of Technology, Kanpur 208016, India
| | - U Chandni
- Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012, India
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2
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Cheng B, Gao Y, Zheng Z, Chen S, Liu Z, Zhang L, Zhu Q, Li H, Li L, Zeng C. Giant nonlinear Hall and wireless rectification effects at room temperature in the elemental semiconductor tellurium. Nat Commun 2024; 15:5513. [PMID: 38951497 PMCID: PMC11217359 DOI: 10.1038/s41467-024-49706-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/27/2023] [Accepted: 06/17/2024] [Indexed: 07/03/2024] Open
Abstract
The second-order nonlinear Hall effect (NLHE) in non-centrosymmetric materials has recently drawn intense interest, since its inherent rectification could enable various device applications such as energy harvesting and wireless charging. However, previously reported NLHE systems normally suffer from relatively small Hall voltage outputs and/or low working temperatures. In this study, we report the observation of a pronounced NLHE in tellurium (Te) thin flakes at room temperature. Benefiting from the semiconductor nature of Te, the obtained nonlinear response can be readily enhanced through electrostatic gating, leading to a second-harmonic output at 300 K up to 2.8 mV. By utilizing such a giant NLHE, we further demonstrate the potential of Te as a wireless Hall rectifier within the radiofrequency range, which is manifested by the remarkable and tunable rectification effect also at room temperature. Extrinsic scattering is then revealed to be the dominant mechanism for the NLHE in Te, with symmetry breaking on the surface playing a key role. As a simple elemental semiconductor, Te provides an appealing platform to advance our understanding of nonlinear transport in solids and to develop NLHE-based electronic devices.
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Affiliation(s)
- Bin Cheng
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui, 230088, China
| | - Yang Gao
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Zhi Zheng
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui, 230088, China
| | - Shuhang Chen
- Department of Electronic Engineering and Information Science, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Zheng Liu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Ling Zhang
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui, 230088, China
| | - Qi Zhu
- Department of Electronic Engineering and Information Science, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Hui Li
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, Anhui, 230601, China
| | - Lin Li
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui, 230088, China.
| | - Changgan Zeng
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui, 230088, China.
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Suárez-Rodríguez M, Martín-García B, Skowroński W, Staszek K, Calavalle F, Fert A, Gobbi M, Casanova F, Hueso LE. Microscale Chiral Rectennas for Energy Harvesting. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400729. [PMID: 38597368 DOI: 10.1002/adma.202400729] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2024] [Revised: 04/04/2024] [Indexed: 04/11/2024]
Abstract
Wireless radiofrequency rectifiers have the potential to power the billions of "Internet of Things" (IoT) devices currently in use by effectively harnessing ambient electromagnetic radiation. However, the current technology relies on the implementation of rectifiers based on Schottky diodes, which exhibit limited capabilities for high-frequency and low-power applications. Consequently, they require an antenna to capture the incoming signal and amplify the input power, thereby limiting the possibility of miniaturizing devices to the millimeter scale. Here, the authors report wireless rectification at the GHz range in a microscale device built on single chiral tellurium with extremely low input powers. By studying the crystal symmetry and the temperature dependence of the rectification, the authors demonstrate that its origin is the intrinsic nonlinear conductivity of the material. Additionally, the unprecedented ability to modulate the rectification output by an electrostatic gate is shown. These results open the path to developing tuneable microscale wireless rectifiers with a single material.
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Affiliation(s)
| | - Beatriz Martín-García
- CIC nanoGUNE BRTA, Donostia-San Sebastián, Basque Country, 20018, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48009, Spain
| | - Witold Skowroński
- Institute of Electronics, AGH University of Krakow, Kraków, 30-059, Poland
| | - Kamil Staszek
- Institute of Electronics, AGH University of Krakow, Kraków, 30-059, Poland
| | | | - Albert Fert
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, Palaiseau, 91767, France
- Donostia International Physics Center (DIPC), Donostia-San Sebastián, Basque Country, 20018, Spain
- Department of Advanced Polymers and Materials: Physics, Chemistry and Technology, Univesity of the Basque Country (UPV/EHU), Donostia-San Sebastián, Basque Country, 20018, Spain
| | - Marco Gobbi
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48009, Spain
- Centro de Física de Materiales (CSIC-UPV/EHU) and Materials Physics Center (MPC), Donostia-San Sebastián, Basque Country, 20018, Spain
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, Donostia-San Sebastián, Basque Country, 20018, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48009, Spain
| | - Luis E Hueso
- CIC nanoGUNE BRTA, Donostia-San Sebastián, Basque Country, 20018, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48009, Spain
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4
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Zhong J, Zhang S, Duan J, Peng H, Feng Q, Hu Y, Wang Q, Mao J, Liu J, Yao Y. Effective Manipulation of a Colossal Second-Order Transverse Response in an Electric-Field-Tunable Graphene Moiré System. NANO LETTERS 2024; 24:5791-5798. [PMID: 38695400 DOI: 10.1021/acs.nanolett.4c00933] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2024]
Abstract
The second-order nonlinear transport illuminates a frequency-doubling response emerging in quantum materials with a broken inversion symmetry. The two principal driving mechanisms, the Berry curvature dipole and the skew scattering, reflect various information including ground-state symmetries, band dispersions, and topology of electronic wave functions. However, effective manipulation of them in a single system has been lacking, hindering the pursuit of strong responses. Here, we report on the effective manipulation of the two mechanisms in a single graphene moiré superlattice, AB-BA stacked twisted double bilayer graphene. Most saliently, by virtue of the high tunability of moiré band structures and scattering rates, a record-high second-order transverse conductivity ∼ 510 μm S V-1 is observed, which is orders of magnitude higher than any reported values in the literature. Our findings establish the potential of electrically tunable graphene moiré systems for nonlinear transport manipulations and applications.
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Affiliation(s)
- Jinrui Zhong
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Shihao Zhang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Junxi Duan
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Huimin Peng
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Qi Feng
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Yuqing Hu
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Qinsheng Wang
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Jinhai Mao
- School of Physical Sciences and CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jianpeng Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
| | - Yugui Yao
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
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5
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Jat MK, Tiwari P, Bajaj R, Shitut I, Mandal S, Watanabe K, Taniguchi T, Krishnamurthy HR, Jain M, Bid A. Higher order gaps in the renormalized band structure of doubly aligned hBN/bilayer graphene moiré superlattice. Nat Commun 2024; 15:2335. [PMID: 38485946 PMCID: PMC10940307 DOI: 10.1038/s41467-024-46672-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/04/2023] [Accepted: 02/27/2024] [Indexed: 03/18/2024] Open
Abstract
This paper presents our findings on the recursive band gap engineering of chiral fermions in bilayer graphene doubly aligned with hBN. Using two interfering moiré potentials, we generate a supermoiré pattern that renormalizes the electronic bands of the pristine bilayer graphene, resulting in higher order fractal gaps even at very low energies. These Bragg gaps can be mapped using a unique linear combination of periodic areas within the system. To validate our findings, we use electronic transport measurements to identify the position of these gaps as a function of the carrier density. We establish their agreement with the predicted carrier densities and corresponding quantum numbers obtained using the continuum model. Our study provides strong evidence of the quantization of the momentum-space area of quasi-Brillouin zones in a minimally incommensurate lattice. It fills important gaps in the understanding of band structure engineering of Dirac fermions with a doubly periodic superlattice spinor potential.
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Affiliation(s)
- Mohit Kumar Jat
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
| | - Priya Tiwari
- Braun Center for Submicron Research, Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Robin Bajaj
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
| | - Ishita Shitut
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
| | - Shinjan Mandal
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - H R Krishnamurthy
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
| | - Manish Jain
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India.
| | - Aveek Bid
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India.
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6
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Zhu H, Yakobson BI. Creating chirality in the nearly two dimensions. NATURE MATERIALS 2024; 23:316-322. [PMID: 38388730 DOI: 10.1038/s41563-024-01814-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 01/18/2024] [Indexed: 02/24/2024]
Abstract
Structural chirality, defined as the lack of mirror symmetry in materials' atomic structure, is only meaningful in three-dimensional space. Yet two-dimensional (2D) materials, despite their small thickness, can show chirality that enables prominent asymmetric optical, electrical and magnetic properties. In this Perspective, we first discuss the possible definition and mathematical description of '2D chiral materials', and the intriguing physics enabled by structural chirality in van der Waals 2D homobilayers and heterostructures, such as circular dichroism, chiral plasmons and the nonlinear Hall effect. We then summarize the recent experimental progress and approaches to induce and control structural chirality in 2D materials from monolayers to superlattices. Finally, we postulate a few unique opportunities offered by 2D chiral materials, the synthesis and new properties of which can potentially lead to chiral optoelectronic devices and possibly materials for enantioselective photochemistry.
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Affiliation(s)
- Hanyu Zhu
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, USA.
| | - Boris I Yakobson
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, USA.
- Department of Chemistry, Rice University, Houston, TX, USA.
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7
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Zhang NJ, Lin JX, Chichinadze DV, Wang Y, Watanabe K, Taniguchi T, Fu L, Li JIA. Angle-resolved transport non-reciprocity and spontaneous symmetry breaking in twisted trilayer graphene. NATURE MATERIALS 2024; 23:356-362. [PMID: 38388731 DOI: 10.1038/s41563-024-01809-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2023] [Accepted: 01/16/2024] [Indexed: 02/24/2024]
Abstract
The identification and characterization of spontaneous symmetry breaking is central to our understanding of strongly correlated two-dimensional materials. In this work, we utilize the angle-resolved measurements of transport non-reciprocity to investigate spontaneous symmetry breaking in twisted trilayer graphene. By analysing the angular dependence of non-reciprocity in both longitudinal and transverse channels, we are able to identify the symmetry axis associated with the underlying electronic order. We report that a hysteretic rotation in the mirror axis can be induced by thermal cycles and a large current bias, supporting the spontaneous breaking of rotational symmetry. Moreover, the onset of non-reciprocity with decreasing temperature coincides with the emergence of orbital ferromagnetism. Combined with the angular dependence of the superconducting diode effect, our findings uncover a direct link between rotational and time-reversal symmetry breaking. These symmetry requirements point towards exchange-driven instabilities in momentum space as a possible origin for transport non-reciprocity in twisted trilayer graphene.
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Affiliation(s)
| | - Jiang-Xiazi Lin
- Department of Physics, Brown University, Providence, RI, USA
| | | | - Yibang Wang
- Department of Physics, Brown University, Providence, RI, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Liang Fu
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - J I A Li
- Department of Physics, Brown University, Providence, RI, USA.
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8
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Mehew JD, Merino RL, Ishizuka H, Block A, Mérida JD, Carlón AD, Watanabe K, Taniguchi T, Levitov LS, Efetov DK, Tielrooij KJ. Ultrafast Umklapp-assisted electron-phonon cooling in magic-angle twisted bilayer graphene. SCIENCE ADVANCES 2024; 10:eadj1361. [PMID: 38335282 PMCID: PMC10857426 DOI: 10.1126/sciadv.adj1361] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/08/2023] [Accepted: 01/11/2024] [Indexed: 02/12/2024]
Abstract
Understanding electron-phonon interactions is fundamentally important and has crucial implications for device applications. However, in twisted bilayer graphene near the magic angle, this understanding is currently lacking. Here, we study electron-phonon coupling using time- and frequency-resolved photovoltage measurements as direct and complementary probes of phonon-mediated hot-electron cooling. We find a remarkable speedup in cooling of twisted bilayer graphene near the magic angle: The cooling time is a few picoseconds from room temperature down to 5 kelvin, whereas in pristine bilayer graphene, cooling to phonons becomes much slower for lower temperatures. Our experimental and theoretical analysis indicates that this ultrafast cooling is a combined effect of superlattice formation with low-energy moiré phonons, spatially compressed electronic Wannier orbitals, and a reduced superlattice Brillouin zone. This enables efficient electron-phonon Umklapp scattering that overcomes electron-phonon momentum mismatch. These results establish twist angle as an effective way to control energy relaxation and electronic heat flow.
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Affiliation(s)
- Jake Dudley Mehew
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST and CSIC, Campus UAB, 08193 Bellaterra (Barcelona), Spain
| | - Rafael Luque Merino
- ICFO - Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology (BIST), Castelldefels 08860, Spain
- Fakultät für Physik, Ludwig-Maximilians-Universität, Schellingstrasse 4, München 80799, Germany
- Munich Center for Quantum Science and Technology (MCQST), München, Germany
| | - Hiroaki Ishizuka
- Department of Physics, Tokyo Institute of Technology, Tokyo, Japan
| | - Alexander Block
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST and CSIC, Campus UAB, 08193 Bellaterra (Barcelona), Spain
| | - Jaime Díez Mérida
- ICFO - Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology (BIST), Castelldefels 08860, Spain
- Fakultät für Physik, Ludwig-Maximilians-Universität, Schellingstrasse 4, München 80799, Germany
- Munich Center for Quantum Science and Technology (MCQST), München, Germany
| | - Andrés Díez Carlón
- ICFO - Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology (BIST), Castelldefels 08860, Spain
- Fakultät für Physik, Ludwig-Maximilians-Universität, Schellingstrasse 4, München 80799, Germany
- Munich Center for Quantum Science and Technology (MCQST), München, Germany
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Material Sciences, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Material Sciences, Tsukuba, Japan
| | - Leonid S. Levitov
- Department of Physics, Massachusetts Institute of Technology, Cambridge, 02139 MA, USA
| | - Dmitri K. Efetov
- Fakultät für Physik, Ludwig-Maximilians-Universität, Schellingstrasse 4, München 80799, Germany
- Munich Center for Quantum Science and Technology (MCQST), München, Germany
| | - Klaas-Jan Tielrooij
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST and CSIC, Campus UAB, 08193 Bellaterra (Barcelona), Spain
- Department of Applied Physics, TU Eindhoven, Den Dolech 2, Eindhoven 5612 AZ, Netherlands
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9
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Suárez-Rodríguez M, Martín-García B, Skowroński W, Calavalle F, Tsirkin SS, Souza I, De Juan F, Chuvilin A, Fert A, Gobbi M, Casanova F, Hueso LE. Odd Nonlinear Conductivity under Spatial Inversion in Chiral Tellurium. PHYSICAL REVIEW LETTERS 2024; 132:046303. [PMID: 38335368 DOI: 10.1103/physrevlett.132.046303] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2023] [Accepted: 12/13/2023] [Indexed: 02/12/2024]
Abstract
Electrical transport in noncentrosymmetric materials departs from the well-established phenomenological Ohm's law. Instead of a linear relation between current and electric field, a nonlinear conductivity emerges along specific crystallographic directions. This nonlinear transport is fundamentally related to the lack of spatial inversion symmetry. However, the experimental implications of an inversion symmetry operation on the nonlinear conductivity remain to be explored. Here, we report on a large, nonlinear conductivity in chiral tellurium. By measuring samples with opposite handedness, we demonstrate that the nonlinear transport is odd under spatial inversion. Furthermore, by applying an electrostatic gate, we modulate the nonlinear output by a factor of 300, reaching the highest reported value excluding engineered heterostructures. Our results establish chiral tellurium as an ideal compound not just to study the fundamental interplay between crystal structure, symmetry operations and nonlinear transport; but also to develop wireless rectifiers and energy-harvesting chiral devices.
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Affiliation(s)
| | - Beatriz Martín-García
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Witold Skowroński
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- AGH University of Krakow, Institute of Electronics, 30-059 Kraków, Poland
| | - F Calavalle
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Stepan S Tsirkin
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Ivo Souza
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Fernando De Juan
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Donostia International Physics Center, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Andrey Chuvilin
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Albert Fert
- Donostia International Physics Center, 20018 Donostia-San Sebastián, Basque Country, Spain
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
- Department of Materials Physics UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Marco Gobbi
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Luis E Hueso
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
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10
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Lu XF, Zhang CP, Wang N, Zhao D, Zhou X, Gao W, Chen XH, Law KT, Loh KP. Nonlinear transport and radio frequency rectification in BiTeBr at room temperature. Nat Commun 2024; 15:245. [PMID: 38172558 PMCID: PMC10764878 DOI: 10.1038/s41467-023-44439-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Accepted: 12/13/2023] [Indexed: 01/05/2024] Open
Abstract
Materials showing second-order nonlinear transport under time reversal symmetry can be used for Radio Frequency (RF) rectification, but practical application demands room temperature operation and sensitivity to microwatts level RF signals in the ambient. In this study, we demonstrate that BiTeBr exhibits a giant nonlinear response which persists up to 350 K. Through scaling and symmetry analysis, we show that skew scattering is the dominant mechanism. Additionally, the sign of the nonlinear response can be electrically switched by tuning the Fermi energy. Theoretical analysis suggests that the large Rashba spin-orbit interactions (SOI), which gives rise to the chirality of the Bloch electrons, provide the microscopic origin of the observed nonlinear response. Our BiTeBr rectifier is capable of rectifying radiation within the frequency range of 0.2 to 6 gigahertz at room temperature, even at extremely low power levels of -15 dBm, and without the need for external biasing. Our work highlights that materials exhibiting large Rashba SOI have the potential to exhibit nonlinear responses at room temperature, making them promising candidates for harvesting high-frequency and low-power ambient electromagnetic energy.
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Affiliation(s)
- Xiu Fang Lu
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Cheng-Ping Zhang
- Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China
| | - Naizhou Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Dan Zhao
- Department of Physics and Hefei National Laboratory for Physical Science at Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - Xin Zhou
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Xian Hui Chen
- Department of Physics and Hefei National Laboratory for Physical Science at Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - K T Law
- Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China.
| | - Kian Ping Loh
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore.
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11
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Zhai J, Trama M, Liu H, Zhu Z, Zhu Y, Perroni CA, Citro R, He P, Shen J. Large Nonlinear Transverse Conductivity and Berry Curvature in KTaO 3 Based Two-Dimensional Electron Gas. NANO LETTERS 2023; 23:11892-11898. [PMID: 38079285 DOI: 10.1021/acs.nanolett.3c03948] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Two-dimensional electron gas (2DEG) at oxide interfaces exhibits various exotic properties stemming from interfacial inversion and symmetry breaking. In this work, we report large nonlinear transverse conductivities in the LaAlO3/KTaO3 interface 2DEG under zero magnetic field. Skew scattering was identified as the dominant origin based on the cubic scaling of nonlinear transverse conductivity with linear longitudinal conductivity and 3-fold symmetry. Moreover, gate-tunable nonlinear transport with pronounced peak and dip was observed and reproduced by our theoretical calculation. These results indicate the presence of Berry curvature hotspots and thus a large Berry curvature triplet at the oxide interface. Our theoretical calculations confirm the existence of large Berry curvatures from the avoided crossing of multiple 5d-orbit bands, orders of magnitude larger than that in transition-metal dichalcogenides. Nonlinear transport offers a new pathway to probe the Berry curvature at oxide interfaces and facilitates new applications in oxide nonlinear electronics.
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Affiliation(s)
- Jinfeng Zhai
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Mattia Trama
- Physics Department "E.R. Caianiello" and CNR-SPIN Salerno Unit, Universitá Degli Studi di Salerno, Via Giovanni Paolo II, 132, I-84084 Fisciano (Sa), Italy
- INFN─Gruppo Collegato di Salerno, I-84084 Fisciano, Italy
- Institute for Theoretical Solid State Physics, IFW Dresden, Helmholtzstr. 20, 01069 Dresden, Germany
| | - Hao Liu
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Zhifei Zhu
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Yinyan Zhu
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Carmine Antonio Perroni
- Physics Department "Ettore Pancini", Universitá Degli Studi di Napoli "Federico II", Complesso Univ. Monte S. Angelo, Via Cintia, I-80126 Napoli, Italy
- CNR-SPIN Napoli Unit, Complesso Univ. Monte S. Angelo, Via Cintia, I-80126 Napoli, Italy
- INFN Napoli Unit, Complesso Univ. Monte S. Angelo, Via Cintia, I-80126 Napoli, Italy
| | - Roberta Citro
- Physics Department "E.R. Caianiello" and CNR-SPIN Salerno Unit, Universitá Degli Studi di Salerno, Via Giovanni Paolo II, 132, I-84084 Fisciano (Sa), Italy
- INFN─Gruppo Collegato di Salerno, I-84084 Fisciano, Italy
| | - Pan He
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
| | - Jian Shen
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
- Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
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12
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Niu C, Qiu G, Wang Y, Tan P, Wang M, Jian J, Wang H, Wu W, Ye PD. Tunable Chirality-Dependent Nonlinear Electrical Responses in 2D Tellurium. NANO LETTERS 2023; 23:8445-8453. [PMID: 37677143 DOI: 10.1021/acs.nanolett.3c01797] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/09/2023]
Abstract
Tellurium (Te) is an elemental semiconductor with a simple chiral crystal structure. Te in a two-dimensional (2D) form synthesized by a solution-based method shows excellent electrical, optical, and thermal properties. In this work, the chirality of hydrothermally grown 2D Te is identified and analyzed by hot sulfuric acid etching and high-angle tilted high-resolution scanning transmission electron microscopy. The gate-tunable nonlinear electrical responses, including the nonreciprocal electrical transport in the longitudinal direction and the nonlinear planar Hall effect in the transverse direction, are observed in 2D Te under a magnetic field. Moreover, the nonlinear electrical responses have opposite signs in left- and right-handed 2D Te due to the opposite spin polarizations ensured by the chiral symmetry. The fundamental relationship between the spin-orbit coupling and the crystal symmetry in two enantiomers provides a viable platform for realizing chirality-based electronic devices by introducing the degree of freedom of chirality into electron transport.
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Affiliation(s)
- Chang Niu
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Gang Qiu
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Yixiu Wang
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Pukun Tan
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Mingyi Wang
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Jie Jian
- School of Materials Science and Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Haiyan Wang
- School of Materials Science and Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Wenzhuo Wu
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Peide D Ye
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
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13
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Wang N, Kaplan D, Zhang Z, Holder T, Cao N, Wang A, Zhou X, Zhou F, Jiang Z, Zhang C, Ru S, Cai H, Watanabe K, Taniguchi T, Yan B, Gao W. Quantum-metric-induced nonlinear transport in a topological antiferromagnet. Nature 2023; 621:487-492. [PMID: 37385423 DOI: 10.1038/s41586-023-06363-3] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2023] [Accepted: 06/22/2023] [Indexed: 07/01/2023]
Abstract
The Berry curvature and quantum metric are the imaginary part and real part, respectively, of the quantum geometric tensor, which characterizes the topology of quantum states1. The Berry curvature is known to generate a number of important transport phenomena, such as the quantum Hall effect and the anomalous Hall effect2,3; however, the consequences of the quantum metric have rarely been probed by transport measurements. Here we report the observation of quantum-metric-induced nonlinear transport, including both a nonlinear anomalous Hall effect and a diode-like non-reciprocal longitudinal response, in thin films of a topological antiferromagnet, MnBi2Te4. Our observations reveal that the transverse and longitudinal nonlinear conductivities reverse signs when reversing the antiferromagnetic order, diminish above the Néel temperature and are insensitive to disorder scattering, thus verifying their origin in the band-structure topology. They also flip signs between electron- and hole-doped regions, in agreement with theoretical calculations. Our work provides a means to probe the quantum metric through nonlinear transport and to design magnetic nonlinear devices.
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Affiliation(s)
- Naizhou Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Daniel Kaplan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Zhaowei Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Tobias Holder
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Ning Cao
- Low Temperature Physics Laboratory, College of Physics and Center of Quantum Materials and Devices, Chongqing University, Chongqing, China
| | - Aifeng Wang
- Low Temperature Physics Laboratory, College of Physics and Center of Quantum Materials and Devices, Chongqing University, Chongqing, China
| | - Xiaoyuan Zhou
- Low Temperature Physics Laboratory, College of Physics and Center of Quantum Materials and Devices, Chongqing University, Chongqing, China
| | - Feifei Zhou
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Zhengzhi Jiang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Chusheng Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Shihao Ru
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Hongbing Cai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore, Singapore
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel.
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore.
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore, Singapore.
- Centre for Quantum Technologies, National University of Singapore, Singapore, Singapore.
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14
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Ma D, Arora A, Vignale G, Song JCW. Anomalous Skew-Scattering Nonlinear Hall Effect and Chiral Photocurrents in PT-Symmetric Antiferromagnets. PHYSICAL REVIEW LETTERS 2023; 131:076601. [PMID: 37656837 DOI: 10.1103/physrevlett.131.076601] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2023] [Revised: 05/31/2023] [Accepted: 07/11/2023] [Indexed: 09/03/2023]
Abstract
Berry curvature and skew scattering play central roles in determining both the linear and nonlinear anomalous Hall effects. Yet in PT-symmetric antiferromagnetic metals, Hall effects from either intrinsic Berry curvature mediated anomalous velocity or the conventional skew-scattering process individually vanish. Here we reveal an unexpected nonlinear Hall effect that relies on both Berry curvature and skew-scattering working in cooperation. This anomalous skew-scattering nonlinear Hall effect (ASN) is PT even and dominates the low-frequency nonlinear Hall effect for PT-symmetric antiferromagnetic metals. Surprisingly, we find that in addition to its Hall response, ASN produces helicity dependent photocurrents, in contrast to other known PT-even nonlinearities in metals that are helicity blind. This characteristic enables us to isolate ASN and establishes new photocurrent tools to interrogate the antiferromagnetic order of PT-symmetric metals.
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Affiliation(s)
- Da Ma
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
| | - Arpit Arora
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
| | - Giovanni Vignale
- The Institute for Functional Intelligent Materials (I-FIM), National University of Singapore, 4 Science Drive 2, Singapore 117544
| | - Justin C W Song
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
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15
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Huang M, Wu Z, Zhang X, Feng X, Zhou Z, Wang S, Chen Y, Cheng C, Sun K, Meng ZY, Wang N. Intrinsic Nonlinear Hall Effect and Gate-Switchable Berry Curvature Sliding in Twisted Bilayer Graphene. PHYSICAL REVIEW LETTERS 2023; 131:066301. [PMID: 37625039 DOI: 10.1103/physrevlett.131.066301] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/23/2022] [Revised: 04/14/2023] [Accepted: 06/26/2023] [Indexed: 08/27/2023]
Abstract
Though the observation of the quantum anomalous Hall effect and nonlocal transport response reveals nontrivial band topology governed by the Berry curvature in twisted bilayer graphene, some recent works reported nonlinear Hall signals in graphene superlattices that are caused by the extrinsic disorder scattering rather than the intrinsic Berry curvature dipole moment. In this Letter, we report a Berry curvature dipole induced intrinsic nonlinear Hall effect in high-quality twisted bilayer graphene devices. We also find that the application of the displacement field substantially changes the direction and amplitude of the nonlinear Hall voltages, as a result of a field-induced sliding of the Berry curvature hotspots. Our Letter not only proves that the Berry curvature dipole could play a dominant role in generating the intrinsic nonlinear Hall signal in graphene superlattices with low disorder densities, but also demonstrates twisted bilayer graphene to be a sensitive and fine-tunable platform for second harmonic generation and rectification.
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Affiliation(s)
- Meizhen Huang
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Zefei Wu
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Xu Zhang
- Department of Physics and HKU-UCAS Joint Institute of Theoretical and Computational Physics, The University of Hong Kong, Hong Kong, China
| | - Xuemeng Feng
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Zishu Zhou
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Shi Wang
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Yong Chen
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Chun Cheng
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Kai Sun
- Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, USA
| | - Zi Yang Meng
- Department of Physics and HKU-UCAS Joint Institute of Theoretical and Computational Physics, The University of Hong Kong, Hong Kong, China
| | - Ning Wang
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
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16
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Wang J, Zeng H, Duan W, Huang H. Intrinsic Nonlinear Hall Detection of the Néel Vector for Two-Dimensional Antiferromagnetic Spintronics. PHYSICAL REVIEW LETTERS 2023; 131:056401. [PMID: 37595209 DOI: 10.1103/physrevlett.131.056401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/22/2022] [Revised: 04/29/2023] [Accepted: 06/30/2023] [Indexed: 08/20/2023]
Abstract
The respective unique merit of antiferromagnets and two-dimensional (2D) materials in spintronic applications inspires us to exploit 2D antiferromagnetic spintronics. However, the detection of the Néel vector in 2D antiferromagnets remains a great challenge because the measured signals usually decrease significantly in the 2D limit. Here we propose that the Néel vector of 2D antiferromagnets can be efficiently detected by the intrinsic nonlinear Hall (INH) effect which exhibits unexpected significant signals. As a specific example, we show that the INH conductivity of the monolayer manganese chalcogenides MnX (X=S, Se, Te) can reach the order of nm·mA/V^{2}, which is orders of magnitude larger than experimental values of paradigmatic antiferromagnetic spintronic materials. The INH effect can be accurately controlled by shifting the chemical potential around the band edge, which is experimentally feasible via electric gating or charge doping. Moreover, we explicitly demonstrate its 2π-periodic dependence on the Néel vector orientation based on an effective k·p model. Our findings enable flexible design schemes and promising material platforms for spintronic memory device applications based on 2D antiferromagnets.
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Affiliation(s)
- Jizhang Wang
- School of Physics, Peking University, Beijing 100871, China
| | - Hui Zeng
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Wenhui Duan
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Institute for Advanced Study, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Huaqing Huang
- School of Physics, Peking University, Beijing 100871, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
- Center for High Energy Physics, Peking University, Beijing 100871, China
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17
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Kang K, Zhao W, Zeng Y, Watanabe K, Taniguchi T, Shan J, Mak KF. Switchable moiré potentials in ferroelectric WTe 2/WSe 2 superlattices. NATURE NANOTECHNOLOGY 2023; 18:861-866. [PMID: 37106050 DOI: 10.1038/s41565-023-01376-5] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2022] [Accepted: 03/17/2023] [Indexed: 06/19/2023]
Abstract
Moiré materials with superlattice periodicity many times the atomic length scale have shown strong electronic correlations and band topology with unprecedented tunability. Non-volatile control of the moiré potentials could allow on-demand switching of superlattice effects but has remained challenging to achieve. Here we demonstrate the switching of the correlated and moiré band insulating states, and the associated nonlinear anomalous Hall effect, by the ferroelectric effect. This is achieved in a ferroelectric WTe2 bilayer of the Td structure with a centred-rectangular moiré superlattice induced by interfacing with a WSe2 monolayer of the H structure. The results can be understood in terms of polarization-dependent charge transfer between two WTe2 monolayers, in which the interfacial layer has a much stronger moiré potential depth; ferroelectric switching thus turns on and off the moiré insulating states. Our study demonstrates the potential for creating new functional moiré materials by incorporating intrinsic symmetry-breaking orders.
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Affiliation(s)
- Kaifei Kang
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
| | - Wenjin Zhao
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, USA
| | - Yihang Zeng
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA
| | - Kenji Watanabe
- National Institute for Materials Science, Tsukuba, Japan
| | | | - Jie Shan
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, USA.
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA.
| | - Kin Fai Mak
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, USA.
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA.
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18
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Hu J, Tan J, Al Ezzi MM, Chattopadhyay U, Gou J, Zheng Y, Wang Z, Chen J, Thottathil R, Luo J, Watanabe K, Taniguchi T, Wee ATS, Adam S, Ariando A. Controlled alignment of supermoiré lattice in double-aligned graphene heterostructures. Nat Commun 2023; 14:4142. [PMID: 37438404 DOI: 10.1038/s41467-023-39893-5] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/02/2023] [Accepted: 06/30/2023] [Indexed: 07/14/2023] Open
Abstract
The supermoiré lattice, built by stacking two moiré patterns, provides a platform for creating flat mini-bands and studying electron correlations. An ultimate challenge in assembling a graphene supermoiré lattice is in the deterministic control of its rotational alignment, which is made highly aleatory due to the random nature of the edge chirality and crystal symmetry. Employing the so-called "golden rule of three", here we present an experimental strategy to overcome this challenge and realize the controlled alignment of double-aligned hBN/graphene/hBN supermoiré lattice, where the twist angles between graphene and top/bottom hBN are both close to zero. Remarkably, we find that the crystallographic edge of neighboring graphite can be used to better guide the stacking alignment, as demonstrated by the controlled production of 20 moiré samples with an accuracy better than ~ 0.2°. Finally, we extend our technique to low-angle twisted bilayer graphene and ABC-stacked trilayer graphene, providing a strategy for flat-band engineering in these moiré materials.
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Affiliation(s)
- Junxiong Hu
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117551, Singapore
| | - Junyou Tan
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117551, Singapore
| | - Mohammed M Al Ezzi
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117551, Singapore
| | - Udvas Chattopadhyay
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117551, Singapore
| | - Jian Gou
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Yuntian Zheng
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Zihao Wang
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, 117544, Singapore
| | - Jiayu Chen
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Reshmi Thottathil
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Jiangbo Luo
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, 305-0044, Japan
| | - Andrew Thye Shen Wee
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Shaffique Adam
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117551, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - A Ariando
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore.
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19
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Gao A, Liu YF, Qiu JX, Ghosh B, V Trevisan T, Onishi Y, Hu C, Qian T, Tien HJ, Chen SW, Huang M, Bérubé D, Li H, Tzschaschel C, Dinh T, Sun Z, Ho SC, Lien SW, Singh B, Watanabe K, Taniguchi T, Bell DC, Lin H, Chang TR, Du CR, Bansil A, Fu L, Ni N, Orth PP, Ma Q, Xu SY. Quantum metric nonlinear Hall effect in a topological antiferromagnetic heterostructure. Science 2023:eadf1506. [PMID: 37319246 DOI: 10.1126/science.adf1506] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/05/2022] [Accepted: 06/06/2023] [Indexed: 06/17/2023]
Abstract
Quantum geometry in condensed matter physics has two components: the real part quantum metric and the imaginary part Berry curvature. Whereas the effects of Berry curvature have been observed through phenomena such as the quantum Hall effect in 2D electron gases and the anomalous Hall effect (AHE) in ferromagnets, quantum metric has rarely been explored. Here, we report a nonlinear Hall effect induced by quantum metric dipole by interfacing even-layered MnBi2Te4 with black phosphorus. The quantum metric nonlinear Hall effect switches direction upon reversing the AFM spins and exhibits distinct scaling that is independent of the scattering time. Our results open the door to discovering quantum metric responses predicted theoretically and pave the way for applications that bridge nonlinear electronics with AFM spintronics.
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Affiliation(s)
- Anyuan Gao
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
| | - Yu-Fei Liu
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
| | - Jian-Xiang Qiu
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
| | - Barun Ghosh
- Department of Physics, Northeastern University, Boston, MA 02115, USA
| | - Thaís V Trevisan
- Department of Physics and Astronomy, Iowa State University, Ames, IA 50011, USA
- Ames National Laboratory, Ames, IA 50011, USA
| | - Yugo Onishi
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Chaowei Hu
- Department of Physics and Astronomy and California NanoSystems Institute, University of California, Los Angeles, Los Angeles, CA 90095, USA
| | - Tiema Qian
- Department of Physics and Astronomy and California NanoSystems Institute, University of California, Los Angeles, Los Angeles, CA 90095, USA
| | - Hung-Ju Tien
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Shao-Wen Chen
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
| | - Mengqi Huang
- Department of Physics, University of California San Diego, La Jolla, CA 92093, USA
| | - Damien Bérubé
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
| | - Houchen Li
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
| | - Christian Tzschaschel
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
| | - Thao Dinh
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
| | - Zhe Sun
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
- Department of Physics, Boston College, Chestnut Hill, MA, USA
| | - Sheng-Chin Ho
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
| | - Shang-Wei Lien
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Bahadur Singh
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Colaba, Mumbai, India
| | - Kenji Watanabe
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - David C Bell
- Harvard John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA
- Center for Nanoscale Systems, Harvard University, Cambridge, MA 02138, USA
| | - Hsin Lin
- Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
| | - Tay-Rong Chang
- Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
| | - Chunhui Rita Du
- Department of Physics, University of California San Diego, La Jolla, CA 92093, USA
| | - Arun Bansil
- Department of Physics, Northeastern University, Boston, MA 02115, USA
| | - Liang Fu
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Ni Ni
- Department of Physics and Astronomy and California NanoSystems Institute, University of California, Los Angeles, Los Angeles, CA 90095, USA
| | - Peter P Orth
- Department of Physics and Astronomy, Iowa State University, Ames, IA 50011, USA
- Ames National Laboratory, Ames, IA 50011, USA
| | - Qiong Ma
- Department of Physics, Boston College, Chestnut Hill, MA, USA
| | - Su-Yang Xu
- Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA
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20
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Rappoport TG, Morgado TA, Lannebère S, Silveirinha MG. Engineering Transistorlike Optical Gain in Two-Dimensional Materials with Berry Curvature Dipoles. PHYSICAL REVIEW LETTERS 2023; 130:076901. [PMID: 36867823 DOI: 10.1103/physrevlett.130.076901] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2022] [Accepted: 12/18/2022] [Indexed: 06/18/2023]
Abstract
Transistors are key elements of electronic circuits as they enable, for example, the isolation or amplification of voltage signals. While conventional transistors are point-type (lumped-element) devices, it may be interesting to realize a distributed transistor-type optical response in a bulk material. Here, we show that low-symmetry two-dimensional metallic systems may be the ideal solution to implement such a distributed-transistor response. To this end, we use the semiclassical Boltzmann equation approach to characterize the optical conductivity of a two-dimensional material under a static electric bias. Similar to the nonlinear Hall effect, the linear electro-optic (EO) response depends on the Berry curvature dipole and can lead to nonreciprocal optical interactions. Most interestingly, our analysis uncovers a novel non-Hermitian linear EO effect that can lead to optical gain and to a distributed transistor response. We study a possible realization based on strained bilayer graphene. Our analysis reveals that the optical gain for incident light transmitted through the biased system depends on the light polarization, and can be quite large, especially for multilayer configurations.
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Affiliation(s)
- Tatiana G Rappoport
- University of Lisbon and Instituto de Telecomunicações, Avenida Rovisco Pais 1, Lisboa, 1049-001 Portugal
- Instituto de Física, Universidade Federal do Rio de Janeiro, C.P. 68528, 21941-972 Rio de Janeiro RJ, Brazil
| | - Tiago A Morgado
- Instituto de Telecomunicações and Department of Electrical Engineering, University of Coimbra, 3030-290 Coimbra, Portugal
| | - Sylvain Lannebère
- Instituto de Telecomunicações and Department of Electrical Engineering, University of Coimbra, 3030-290 Coimbra, Portugal
| | - Mário G Silveirinha
- University of Lisbon and Instituto de Telecomunicações, Avenida Rovisco Pais 1, Lisboa, 1049-001 Portugal
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21
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Min L, Tan H, Xie Z, Miao L, Zhang R, Lee SH, Gopalan V, Liu CX, Alem N, Yan B, Mao Z. Strong room-temperature bulk nonlinear Hall effect in a spin-valley locked Dirac material. Nat Commun 2023; 14:364. [PMID: 36690617 PMCID: PMC9871029 DOI: 10.1038/s41467-023-35989-0] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/03/2022] [Accepted: 01/10/2023] [Indexed: 01/24/2023] Open
Abstract
Nonlinear Hall effect (NLHE) is a new type of Hall effect with wide application prospects. Practical device applications require strong NLHE at room temperature (RT). However, previously reported NLHEs are all low-temperature phenomena except for the surface NLHE of TaIrTe4. Bulk RT NLHE is highly desired due to its ability to generate large photocurrent. Here, we show the spin-valley locked Dirac state in BaMnSb2 can generate a strong bulk NLHE at RT. In the microscale devices, we observe the typical signature of an intrinsic NLHE, i.e. the transverse Hall voltage quadratically scales with the longitudinal current as the current is applied to the Berry curvature dipole direction. Furthermore, we also demonstrate our nonlinear Hall device's functionality in wireless microwave detection and frequency doubling. These findings broaden the coupled spin and valley physics from 2D systems into a 3D system and lay a foundation for exploring bulk NLHE's applications.
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Affiliation(s)
- Lujin Min
- grid.29857.310000 0001 2097 4281Department of Physics, Pennsylvania State University, University Park, PA USA ,grid.29857.310000 0001 2097 4281Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA USA
| | - Hengxin Tan
- grid.13992.300000 0004 0604 7563Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Zhijian Xie
- grid.266860.c0000 0001 0671 255XDepartment of Electrical and Computer Engineering, North Carolina Agriculture &Technical State University, Greensboro, NC USA
| | - Leixin Miao
- grid.29857.310000 0001 2097 4281Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA USA
| | - Ruoxi Zhang
- grid.29857.310000 0001 2097 4281Department of Physics, Pennsylvania State University, University Park, PA USA
| | - Seng Huat Lee
- grid.29857.310000 0001 2097 4281Department of Physics, Pennsylvania State University, University Park, PA USA ,grid.29857.310000 0001 2097 42812D Crystal Consortium, Materials Research Institute, Pennsylvania State University, University Park, PA USA
| | - Venkatraman Gopalan
- grid.29857.310000 0001 2097 4281Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA USA
| | - Chao-Xing Liu
- grid.29857.310000 0001 2097 4281Department of Physics, Pennsylvania State University, University Park, PA USA
| | - Nasim Alem
- grid.29857.310000 0001 2097 4281Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA USA
| | - Binghai Yan
- grid.13992.300000 0004 0604 7563Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Zhiqiang Mao
- grid.29857.310000 0001 2097 4281Department of Physics, Pennsylvania State University, University Park, PA USA ,grid.29857.310000 0001 2097 4281Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA USA ,grid.29857.310000 0001 2097 42812D Crystal Consortium, Materials Research Institute, Pennsylvania State University, University Park, PA USA
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22
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Duan J, Jian Y, Gao Y, Peng H, Zhong J, Feng Q, Mao J, Yao Y. Giant Second-Order Nonlinear Hall Effect in Twisted Bilayer Graphene. PHYSICAL REVIEW LETTERS 2022; 129:186801. [PMID: 36374703 DOI: 10.1103/physrevlett.129.186801] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2022] [Revised: 08/08/2022] [Accepted: 09/30/2022] [Indexed: 06/16/2023]
Abstract
In the second-order response regime, the Hall voltage can be nonzero without time-reversal symmetry breaking but inversion symmetry breaking. Multiple mechanisms contribute to the nonlinear Hall effect. The disorder-related contributions can enter the NLHE in the leading role, but experimental investigations are scarce, especially the exploration of the contributions from different disorder sources. Here, we report a giant nonlinear response in twisted bilayer graphene, dominated by disorder-induced skew scattering. The magnitude and direction of the second-order nonlinearity can be effectively tuned by the gate voltage. A peak value of the second-order Hall conductivity reaching 8.76 μm SV^{-1} is observed close to the full filling of the moiré band, four order larger than the intrinsic contribution detected in WTe_{2}. The scaling shows that the giant second-order nonlinear Hall effect in twisted bilayer graphene stems from the collaboration of the static (impurities) and dynamic (phonons) disorders. It is mainly determined by the impurity skew scattering at 1.7 K. The phonon skew scattering, however, has a much larger coupling coefficient, and becomes comparable to the impurity contribution as the temperature rises. Our observations provide a comprehensive experimental understanding of the disorder-related mechanisms in the nonlinear Hall effect.
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Affiliation(s)
- Junxi Duan
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Yu Jian
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Yang Gao
- Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Huimin Peng
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Jinrui Zhong
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Qi Feng
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Jinhai Mao
- School of Physical Sciences and CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yugui Yao
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
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23
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A detector that can learn the fingerprint of light. Nature 2022; 604:252-253. [PMID: 35418627 DOI: 10.1038/d41586-022-00973-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
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