1
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Quincke M, Mundszinger M, Biskupek J, Kaiser U. Defect Density and Atomic Defect Recognition in the Middle Layer of a Trilayer MoS 2 Stack. NANO LETTERS 2024; 24:10496-10503. [PMID: 38950105 DOI: 10.1021/acs.nanolett.4c02391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/03/2024]
Abstract
Molybdenum disulfide (MoS2) is one of the most intriguing two-dimensional materials, and moreover, its single atomic defects can significantly alter the properties. These defects can be both imaged and engineered using spherical and chromatic aberration-corrected high-resolution transmission electron microscopy (CC/CS-corrected HRTEM). In a few-layer stack, several atoms are vertically aligned in one atomic column. Therefore, it is challenging to determine the positions of missing atoms and the damage cross-section, particularly in the not directly accessible middle layers. In this study, we introduce a technique for extracting subtle intensity differences in CC/CS-corrected HRTEM images. By exploiting the crystal structure of the material, our method discerns chalcogen vacancies even in the middle layer of trilayer MoS2. We found that in trilayer MoS2 the middle layer's damage cross-section is about ten times lower than that in the monolayer. Our findings could be essential for the application of few-layer MoS2 in nanodevices.
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Affiliation(s)
- Moritz Quincke
- Central Facility Materials Science Electron Microscopy, Ulm University, 89081 Ulm, Germany
- Institute for Quantum Optics, Ulm University, 89081 Ulm, Germany
| | - Manuel Mundszinger
- Central Facility Materials Science Electron Microscopy, Ulm University, 89081 Ulm, Germany
| | - Johannes Biskupek
- Central Facility Materials Science Electron Microscopy, Ulm University, 89081 Ulm, Germany
| | - Ute Kaiser
- Central Facility Materials Science Electron Microscopy, Ulm University, 89081 Ulm, Germany
- Institute for Quantum Optics, Ulm University, 89081 Ulm, Germany
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2
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Blundo E, Polimeni A. Alice (and Bob) in Flatland. NANO LETTERS 2024; 24:9777-9783. [PMID: 39088739 DOI: 10.1021/acs.nanolett.4c02702] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/03/2024]
Abstract
2D quantum materials have opened infinite doors, hosting intriguing phenomena and featuring incredible engineering potential. Whether these qualities can boost the use of 2D crystals for quantum applications remains an open field with yet unexplored paths.
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Affiliation(s)
- Elena Blundo
- Physics Department, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy
| | - Antonio Polimeni
- Physics Department, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy
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3
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Averchenko AV, Abbas OA, Salimon IA, Zharkova EV, Grayfer ED, Lipovskikh S, McNaughter P, Lewis D, Hallam T, Lagoudakis PG, Mailis S. Laser-Induced Synthesis of Tin Sulfides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2401891. [PMID: 39004881 DOI: 10.1002/smll.202401891] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2024] [Revised: 06/21/2024] [Indexed: 07/16/2024]
Abstract
Various polytypes of van der Waals (vdW) materials can be formed by sulfur and tin, which exhibit distinctive and complementary electronic properties. Hence, these materials are attractive candidates for the design of multifunctional devices. This work demonstrates direct selective growth of tin sulfides by laser irradiation. A 532 nm continuous wave laser is used to synthesize centimeter-scale tin sulfide tracks from single source precursor tin(II) o-ethylxanthate under ambient conditions. Modulation of laser irradiation conditions enables tuning of the dominant phase of tin sulfide as well as SnS2/SnS heterostructures formation. An in-depth investigation of the morphological, structural, and compositional characteristics of the laser-synthesized tin sulfide microstructures is reported. Furthermore, laser-synthesized tin sulfides photodetectors show broad spectral response with relatively high photoresponsivity up to 4 AW-1 and fast switching time (τ rise = 1.8 ms and τ fall = 16 ms). This approach is versatile and can be exploited in various fields such as energy conversion and storage, catalysis, chemical sensors, and optoelectronics.
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Affiliation(s)
- Aleksandr V Averchenko
- Center for Photonic Science and Engineering (CPhSE), Skolkovo Institute of Science and Technology, 3 Nobel Street, Moscow, 143026, Russian Federation
| | - Omar A Abbas
- Center for Photonic Science and Engineering (CPhSE), Skolkovo Institute of Science and Technology, 3 Nobel Street, Moscow, 143026, Russian Federation
- Laser and Optoelectronics Department, College of Engineering, Al-Nahrain University, Baghdad, 10072, Iraq
| | - Igor A Salimon
- Center for Photonic Science and Engineering (CPhSE), Skolkovo Institute of Science and Technology, 3 Nobel Street, Moscow, 143026, Russian Federation
| | - Ekaterina V Zharkova
- Center for Photonic Science and Engineering (CPhSE), Skolkovo Institute of Science and Technology, 3 Nobel Street, Moscow, 143026, Russian Federation
| | - Ekaterina D Grayfer
- Center for Photonic Science and Engineering (CPhSE), Skolkovo Institute of Science and Technology, 3 Nobel Street, Moscow, 143026, Russian Federation
| | - Svetlana Lipovskikh
- Center for Energy Science and Technology (CEST), Skolkovo Institute of Science and Technology, 3 Nobel Street, Moscow, 143026, Russian Federation
| | - Paul McNaughter
- Department of Materials, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - David Lewis
- Department of Materials, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Toby Hallam
- School of Mathematics, Statistics and Physics, Newcastle University, Newcastle upon Tyne, NE17RU, UK
| | - Pavlos G Lagoudakis
- Center for Photonic Science and Engineering (CPhSE), Skolkovo Institute of Science and Technology, 3 Nobel Street, Moscow, 143026, Russian Federation
| | - Sakellaris Mailis
- Center for Photonic Science and Engineering (CPhSE), Skolkovo Institute of Science and Technology, 3 Nobel Street, Moscow, 143026, Russian Federation
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4
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Timmer D, Gittinger M, Quenzel T, Cadore AR, Rosa BLT, Li W, Soavi G, Lünemann DC, Stephan S, Silies M, Schulz T, Steinhoff A, Jahnke F, Cerullo G, Ferrari AC, De Sio A, Lienau C. Ultrafast Coherent Exciton Couplings and Many-Body Interactions in Monolayer WS 2. NANO LETTERS 2024; 24:8117-8125. [PMID: 38901032 PMCID: PMC11229071 DOI: 10.1021/acs.nanolett.4c01991] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2024] [Revised: 06/03/2024] [Accepted: 06/12/2024] [Indexed: 06/22/2024]
Abstract
Transition metal dichalcogenides (TMDs) are quantum confined systems with interesting optoelectronic properties, governed by Coulomb interactions in the monolayer (1L) limit, where strongly bound excitons provide a sensitive probe for many-body interactions. Here, we use two-dimensional electronic spectroscopy (2DES) to investigate many-body interactions and their dynamics in 1L-WS2 at room temperature and with sub-10 fs time resolution. Our data reveal coherent interactions between the strongly detuned A and B exciton states in 1L-WS2. Pronounced ultrafast oscillations of the transient optical response of the B exciton are the signature of a coherent 50 meV coupling and coherent population oscillations between the two exciton states. Supported by microscopic semiconductor Bloch equation simulations, these coherent dynamics are rationalized in terms of Dexter-like interactions. Our work sheds light on the role of coherent exciton couplings and many-body interactions in the ultrafast temporal evolution of spin and valley states in TMDs.
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Affiliation(s)
- Daniel Timmer
- Institut
für Physik, Carl von Ossietzky Universität
Oldenburg, 26129 Oldenburg, Germany
| | - Moritz Gittinger
- Institut
für Physik, Carl von Ossietzky Universität
Oldenburg, 26129 Oldenburg, Germany
| | - Thomas Quenzel
- Institut
für Physik, Carl von Ossietzky Universität
Oldenburg, 26129 Oldenburg, Germany
| | - Alisson R. Cadore
- Cambridge
Graphene Centre, University of Cambridge, CB3 0FA Cambridge, United Kingdom
| | - Barbara L. T. Rosa
- Cambridge
Graphene Centre, University of Cambridge, CB3 0FA Cambridge, United Kingdom
| | - Wenshan Li
- Cambridge
Graphene Centre, University of Cambridge, CB3 0FA Cambridge, United Kingdom
| | - Giancarlo Soavi
- Cambridge
Graphene Centre, University of Cambridge, CB3 0FA Cambridge, United Kingdom
| | - Daniel C. Lünemann
- Institut
für Physik, Carl von Ossietzky Universität
Oldenburg, 26129 Oldenburg, Germany
| | - Sven Stephan
- Institut
für Physik, Carl von Ossietzky Universität
Oldenburg, 26129 Oldenburg, Germany
| | - Martin Silies
- Institut
für Physik, Carl von Ossietzky Universität
Oldenburg, 26129 Oldenburg, Germany
| | - Tommy Schulz
- Institute
for Theoretical Physics and Bremen Center for Computational Materials
Science, University of Bremen, P.O. Box 330 440, 28334 Bremen, Germany
| | - Alexander Steinhoff
- Institute
for Theoretical Physics and Bremen Center for Computational Materials
Science, University of Bremen, P.O. Box 330 440, 28334 Bremen, Germany
| | - Frank Jahnke
- Institute
for Theoretical Physics and Bremen Center for Computational Materials
Science, University of Bremen, P.O. Box 330 440, 28334 Bremen, Germany
| | - Giulio Cerullo
- Dipartimento
di Fisica, Politecnico di Milano, Piazza L. da Vinci 32, 20133 Milano, Italy
- Istituto
di Fotonica e Nanotecnologie-CNR, Piazza L. da Vinci 32, 20133 Milano, Italy
| | - Andrea C. Ferrari
- Cambridge
Graphene Centre, University of Cambridge, CB3 0FA Cambridge, United Kingdom
| | - Antonietta De Sio
- Institut
für Physik, Carl von Ossietzky Universität
Oldenburg, 26129 Oldenburg, Germany
- Center
for Nanoscale Dynamics (CENAD), Carl von
Ossietzky Universität Oldenburg, Institut für Physik, 26129 Oldenburg, Germany
| | - Christoph Lienau
- Institut
für Physik, Carl von Ossietzky Universität
Oldenburg, 26129 Oldenburg, Germany
- Center
for Nanoscale Dynamics (CENAD), Carl von
Ossietzky Universität Oldenburg, Institut für Physik, 26129 Oldenburg, Germany
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5
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Talha-Dean T, Tarn Y, Mukherjee S, John JW, Huang D, Verzhbitskiy IA, Venkatakrishnarao D, Das S, Lee R, Mishra A, Wang S, Ang YS, Johnson Goh KE, Lau CS. Nanoironing van der Waals Heterostructures toward Electrically Controlled Quantum Dots. ACS APPLIED MATERIALS & INTERFACES 2024; 16:31738-31746. [PMID: 38843175 DOI: 10.1021/acsami.4c03639] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/22/2024]
Abstract
Assembling two-dimensional van der Waals (vdW)-layered materials into heterostructures is an exciting development that sparked the discovery of rich correlated electronic phenomena. vdW heterostructures also offer possibilities for designer device applications in areas such as optoelectronics, valley- and spintronics, and quantum technology. However, realizing the full potential of these heterostructures requires interfaces with exceptionally low disorder which is challenging to engineer. Here, we show that thermal scanning probes can be used to create pristine interfaces in vdW heterostructures. Our approach is compatible at both the material- and device levels, and monolayer WS2 transistors show up to an order of magnitude improvement in electrical performance from this technique. We also demonstrate vdW heterostructures with low interface disorder enabling the electrical formation and control of quantum dots that can be tuned from macroscopic current flow to the single-electron tunneling regime.
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Affiliation(s)
- Teymour Talha-Dean
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics and Astronomy, Queen Mary University of London, London E1 4NS, U.K
| | - Yaoju Tarn
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Subhrajit Mukherjee
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - John Wellington John
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ding Huang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ivan A Verzhbitskiy
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Dasari Venkatakrishnarao
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Sarthak Das
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Rainer Lee
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Abhishek Mishra
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Shuhua Wang
- Science, Mathematics and Technology, Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, Singapore
| | - Yee Sin Ang
- Science, Mathematics and Technology, Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, Singapore
| | - Kuan Eng Johnson Goh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Chit Siong Lau
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
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6
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Xu DD, Vong AF, Utama MIB, Lebedev D, Ananth R, Hersam MC, Weiss EA, Mirkin CA. Sub-Diffraction Correlation of Quantum Emitters and Local Strain Fields in Strain-Engineered WSe 2 Monolayers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2314242. [PMID: 38346232 DOI: 10.1002/adma.202314242] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/27/2023] [Indexed: 03/27/2024]
Abstract
Strain-engineering in atomically thin metal dichalcogenides is a useful method for realizing single-photon emitters (SPEs) for quantum technologies. Correlating SPE position with local strain topography is challenging due to localization inaccuracies from the diffraction limit. Currently, SPEs are assumed to be positioned at the highest strained location and are typically identified by randomly screening narrow-linewidth emitters, of which only a few are spectrally pure. In this work, hyperspectral quantum emitter localization microscopy is used to locate 33 SPEs in nanoparticle-strained WSe2 monolayers with sub-diffraction-limit resolution (≈30 nm) and correlate their positions with the underlying strain field via image registration. In this system, spectrally pure emitters are not concentrated at the highest strain location due to spectral contamination; instead, isolable SPEs are distributed away from points of peak strain with an average displacement of 240 nm. These observations point toward a need for a change in the design rules for strain-engineered SPEs and constitute a key step toward realizing next-generation quantum optical architectures.
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Affiliation(s)
- David D Xu
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- International Institute for Nanotechnology, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Albert F Vong
- International Institute for Nanotechnology, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
| | - M Iqbal Bakti Utama
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
| | - Dmitry Lebedev
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
| | - Riddhi Ananth
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- International Institute for Nanotechnology, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Mark C Hersam
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- International Institute for Nanotechnology, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
- Department of Electrical and Computer Engineering, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Emily A Weiss
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- International Institute for Nanotechnology, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
| | - Chad A Mirkin
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- International Institute for Nanotechnology, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
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7
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Gusso A, Sánchez-Ochoa F, Esquivel-Sirvent R. Near-Field Radiative Heat Transfer between Layered β-GeSe Slabs: First-Principles Approach. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2024; 40:10685-10694. [PMID: 38728152 DOI: 10.1021/acs.langmuir.4c00654] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2024]
Abstract
The group-IV monochalcogenide monolayers, GeSe, are interesting and novel two-dimensional (2D) semiconductor materials due to their highly anisotropic physical properties. Monolayers of the different GeSe polymorphs have already had their physical properties and potential applications extensively investigated. However, few-layer homostructures, which can also be approximated as 2D systems in many cases, have not received the same attention. For this reason, in this work, we investigate the optical properties of a free-standing few-layer β-GeSe system and use this information to investigate their performance in the near-field radiative heat transfer (NFRHT). The required optical conductivity of the few-layer 2D material is calculated by using density functional theory (DFT), including spin-orbit coupling. The band structure is investigated for up to five layers, and the effective electron masses are calculated correspondingly. Using this information, both the intraband transitions due to the presence of free electrons introduced by doping and the interband transitions are considered. The contribution of the ionic vibrations is also included in calculating the optical properties because of its relevance to NFRHT through the resulting active optical phonons. With all these contributions included, more realistic predictions of the NFRHT between the layered 2D β-GeSe materials can be obtained. It is found that the heat transfer attainable with the layered system is similar to that of a single layer of β-GeSe we have obtained previously.
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Affiliation(s)
- A Gusso
- Departamento de Ciencias Exactas-EEIMVR, Universidad Federal Fluminense, 27255-125 Volta Redonda, Brazil
| | - F Sánchez-Ochoa
- Instituto de Física, Universidad Nacional Autónoma de México, 04510 CDMX, Mexico
| | - R Esquivel-Sirvent
- Instituto de Física, Universidad Nacional Autónoma de México, 04510 CDMX, Mexico
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8
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Durmuş M, Sarpkaya I. Quantum Beats between Spin-Singlet and Spin-Triplet Interlayer Exciton Transitions in WSe 2-MoSe 2 Heterobilayers. NANO LETTERS 2024; 24:5767-5773. [PMID: 38639575 PMCID: PMC11100286 DOI: 10.1021/acs.nanolett.4c00831] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2024] [Revised: 04/01/2024] [Accepted: 04/02/2024] [Indexed: 04/20/2024]
Abstract
The long-lived interlayer excitons (IXs) of semiconducting transition metal dichalcogenide heterobilayers are prime candidates for developing various optoelectronic and valleytronic devices. Their photophysical properties, including fine structure, have been the focus of recent studies, and the presence of two spin states, namely, spin-singlet and spin-triplet, has been experimentally confirmed. However, the existence of the interaction between these states and their nature remains unknown to date. Here, we demonstrate the presence of coherent coupling between the spin-singlet and spin-triplet IXs of a WSe2-MoSe2 heterobilayer utilizing quantum beat spectroscopy via a home-built Michelson interferometer. As a clear signature of coherent coupling, the quantum beat signal has been observed for the first time between closely spaced transitions of IXs. The observed strong damping of the quantum beat signals with fast dephasing times of 270-400 fs indicates that fluctuations giving rise to inhomogeneous broadening in the photoluminescence emission of these states are uncorrelated.
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Affiliation(s)
- Mehmet
Atıf Durmuş
- Bilkent
University UNAM − National Nanotechnology Research Center, Ankara 06800, Turkey
| | - Ibrahim Sarpkaya
- Bilkent
University UNAM − National Nanotechnology Research Center, Ankara 06800, Turkey
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9
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Guo Y, Zhang Y, Liu QL, Zhou Z, He J, Yuan S, Heine T, Wang J. Laser-Induced Ultrafast Spin Injection in All-Semiconductor Magnetic CrI 3/WSe 2 Heterobilayer. ACS NANO 2024; 18:11732-11739. [PMID: 38670539 PMCID: PMC11080996 DOI: 10.1021/acsnano.3c12926] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/21/2023] [Revised: 03/22/2024] [Accepted: 04/02/2024] [Indexed: 04/28/2024]
Abstract
Spin injection stands out as a crucial method employed for initializing, manipulating, and measuring the spin states of electrons, which are fundamental to the creation of qubits in quantum computing. However, ensuring efficient spin injection while maintaining compatibility with standard semiconductor processing techniques is a significant challenge. Herein, we demonstrate the capability of inducing an ultrafast spin injection into a WSe2 layer from a magnetic CrI3 layer on a femtosecond time scale, achieved through real-time time-dependent density functional theory calculations upon a laser pulse. Following the peak of the magnetic moment in the CrI3 sublayer, the magnetic moment of the WSe2 layer reaches a maximum of 0.89 μB (per unit cell containing 4 WSe2 and 1 CrI3 units). During the spin dynamics, spin-polarized excited electrons transfer from the WSe2 layer to the CrI3 layer via type-II band alignment. The large spin splitting in conduction bands and the difference in the number of spin-polarized local unoccupied states available in the CrI3 layer lead to a net spin in the WSe2 layer. Furthermore, we confirmed that the number of available states, the spin-flip process, and the laser pulse parameters play important roles during the spin injection process. This work highlights the dynamic and rapid nature of spin manipulation in layered all-semiconductor systems, offering significant implications for the development and enhancement of quantum information processing technologies.
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Affiliation(s)
- Yilv Guo
- Key
Laboratory of Quantum Materials and Devices of Ministry of Education,
School of Physics, Southeast University, Nanjing 211189, People’s Republic of China
- Faculty
of Chemistry and Food Chemistry, TU Dresden, Dresden 01069, Germany
| | - Yehui Zhang
- Key
Laboratory of Quantum Materials and Devices of Ministry of Education,
School of Physics, Southeast University, Nanjing 211189, People’s Republic of China
| | - Qing Long Liu
- Faculty
of Chemistry and Food Chemistry, TU Dresden, Dresden 01069, Germany
| | - Zhaobo Zhou
- Department
of Physical and Macromolecular Chemistry, Faculty of Science, Charles University in Prague, Prague 12843, Czech Republic
| | - Junjie He
- Department
of Physical and Macromolecular Chemistry, Faculty of Science, Charles University in Prague, Prague 12843, Czech Republic
| | - Shijun Yuan
- Key
Laboratory of Quantum Materials and Devices of Ministry of Education,
School of Physics, Southeast University, Nanjing 211189, People’s Republic of China
| | - Thomas Heine
- Faculty
of Chemistry and Food Chemistry, TU Dresden, Dresden 01069, Germany
| | - Jinlan Wang
- Key
Laboratory of Quantum Materials and Devices of Ministry of Education,
School of Physics, Southeast University, Nanjing 211189, People’s Republic of China
- Suzhou
Laboratory, Suzhou 215004, People’s Republic
of China
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10
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Thomas JC, Chen W, Xiong Y, Barker BA, Zhou J, Chen W, Rossi A, Kelly N, Yu Z, Zhou D, Kumari S, Barnard ES, Robinson JA, Terrones M, Schwartzberg A, Ogletree DF, Rotenberg E, Noack MM, Griffin S, Raja A, Strubbe DA, Rignanese GM, Weber-Bargioni A, Hautier G. A substitutional quantum defect in WS 2 discovered by high-throughput computational screening and fabricated by site-selective STM manipulation. Nat Commun 2024; 15:3556. [PMID: 38670956 DOI: 10.1038/s41467-024-47876-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/07/2023] [Accepted: 04/15/2024] [Indexed: 04/28/2024] Open
Abstract
Point defects in two-dimensional materials are of key interest for quantum information science. However, the parameter space of possible defects is immense, making the identification of high-performance quantum defects very challenging. Here, we perform high-throughput (HT) first-principles computational screening to search for promising quantum defects within WS2, which present localized levels in the band gap that can lead to bright optical transitions in the visible or telecom regime. Our computed database spans more than 700 charged defects formed through substitution on the tungsten or sulfur site. We found that sulfur substitutions enable the most promising quantum defects. We computationally identify the neutral cobalt substitution to sulfur (CoS 0 ) and fabricate it with scanning tunneling microscopy (STM). The CoS 0 electronic structure measured by STM agrees with first principles and showcases an attractive quantum defect. Our work shows how HT computational screening and nanoscale synthesis routes can be combined to design promising quantum defects.
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Affiliation(s)
- John C Thomas
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
- Thayer School of Engineering, Dartmouth College, Hanover, NH, 03755, USA.
| | - Wei Chen
- Institute of Condensed Matter and Nanoscicence, Université Catholique de Louvain, Louvain-la-Neuve, 1348, Belgium
| | - Yihuang Xiong
- Thayer School of Engineering, Dartmouth College, Hanover, NH, 03755, USA
| | - Bradford A Barker
- Department of Physics, University of California, Merced, Merced, CA, 95343, USA
| | - Junze Zhou
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Weiru Chen
- Thayer School of Engineering, Dartmouth College, Hanover, NH, 03755, USA
| | - Antonio Rossi
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Nolan Kelly
- Department of Physics, University of California, Merced, Merced, CA, 95343, USA
| | - Zhuohang Yu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16082, USA
- Center for Two-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Da Zhou
- Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Shalini Kumari
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16082, USA
- Center for Two-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Edward S Barnard
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Joshua A Robinson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16082, USA
- Center for Two-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA
- Department of Chemistry, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Mauricio Terrones
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16082, USA
- Center for Two-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA, 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA
- Department of Chemistry, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Adam Schwartzberg
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - D Frank Ogletree
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Eli Rotenberg
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Marcus M Noack
- Applied Mathematics and Computational Research Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Sinéad Griffin
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Archana Raja
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - David A Strubbe
- Department of Physics, University of California, Merced, Merced, CA, 95343, USA
| | - Gian-Marco Rignanese
- Institute of Condensed Matter and Nanoscicence, Université Catholique de Louvain, Louvain-la-Neuve, 1348, Belgium
| | - Alexander Weber-Bargioni
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
| | - Geoffroy Hautier
- Thayer School of Engineering, Dartmouth College, Hanover, NH, 03755, USA.
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11
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Mai TNA, Ali S, Hossain MS, Chen C, Ding L, Chen Y, Solntsev AS, Mou H, Xu X, Medhekar N, Tran TT. Cryogenic Thermal Shock Effects on Optical Properties of Quantum Emitters in Hexagonal Boron Nitride. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19340-19349. [PMID: 38570338 DOI: 10.1021/acsami.3c18032] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/05/2024]
Abstract
Solid-state quantum emitters are vital building blocks for quantum information science and quantum technology. Among various types of solid-state emitters discovered to date, color centers in hexagonal boron nitride have garnered tremendous traction in recent years, thanks to their environmental robustness, high brightness, and room-temperature operation. Most recently, these quantum emitters have been employed for satellite-based quantum key distribution. One of the most important requirements to qualify these emitters for space-based applications is their optical stability against cryogenic thermal shock. Such an understanding has, however, remained elusive to date. Here, we report on the effects caused by such thermal shock that induces random, irreversible changes in the spectral characteristics of the quantum emitters. By employing a combination of structural characterizations and density functional calculations, we attribute the observed changes to lattice strain caused by cryogenic temperature shock. Our study sheds light on the stability of the quantum emitters under extreme conditions─similar to those countered in outer space.
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Affiliation(s)
- Thi Ngoc Anh Mai
- School of Electrical and Data Engineering, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Sajid Ali
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
| | - Md Shakhawath Hossain
- School of Electrical and Data Engineering, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Chaohao Chen
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Lei Ding
- School of Biomedical Engineering, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Yongliang Chen
- Department of Physics, The University of Hong Kong, Pokfulam, Hong Kong 999077, China
| | - Alexander S Solntsev
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Hongwei Mou
- School of Biomedical Engineering, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Xiaoxue Xu
- School of Biomedical Engineering, University of Technology Sydney, Ultimo, NSW 2007, Australia
| | - Nikhil Medhekar
- School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
| | - Toan Trong Tran
- School of Electrical and Data Engineering, University of Technology Sydney, Ultimo, NSW 2007, Australia
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12
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Sun X, Suriyage M, Khan AR, Gao M, Zhao J, Liu B, Hasan MM, Rahman S, Chen RS, Lam PK, Lu Y. Twisted van der Waals Quantum Materials: Fundamentals, Tunability, and Applications. Chem Rev 2024; 124:1992-2079. [PMID: 38335114 DOI: 10.1021/acs.chemrev.3c00627] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/12/2024]
Abstract
Twisted van der Waals (vdW) quantum materials have emerged as a rapidly developing field of two-dimensional (2D) semiconductors. These materials establish a new central research area and provide a promising platform for studying quantum phenomena and investigating the engineering of novel optoelectronic properties such as single photon emission, nonlinear optical response, magnon physics, and topological superconductivity. These captivating electronic and optical properties result from, and can be tailored by, the interlayer coupling using moiré patterns formed by vertically stacking atomic layers with controlled angle misorientation or lattice mismatch. Their outstanding properties and the high degree of tunability position them as compelling building blocks for both compact quantum-enabled devices and classical optoelectronics. This paper offers a comprehensive review of recent advancements in the understanding and manipulation of twisted van der Waals structures and presents a survey of the state-of-the-art research on moiré superlattices, encompassing interdisciplinary interests. It delves into fundamental theories, synthesis and fabrication, and visualization techniques, and the wide range of novel physical phenomena exhibited by these structures, with a focus on their potential for practical device integration in applications ranging from quantum information to biosensors, and including classical optoelectronics such as modulators, light emitting diodes, lasers, and photodetectors. It highlights the unique ability of moiré superlattices to connect multiple disciplines, covering chemistry, electronics, optics, photonics, magnetism, topological and quantum physics. This comprehensive review provides a valuable resource for researchers interested in moiré superlattices, shedding light on their fundamental characteristics and their potential for transformative applications in various fields.
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Affiliation(s)
- Xueqian Sun
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Manuka Suriyage
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ahmed Raza Khan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Department of Industrial and Manufacturing Engineering, University of Engineering and Technology (Rachna College Campus), Gujranwala, Lahore 54700, Pakistan
| | - Mingyuan Gao
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- College of Engineering and Technology, Southwest University, Chongqing 400716, China
| | - Jie Zhao
- Department of Quantum Science & Technology, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Boqing Liu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Md Mehedi Hasan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Sharidya Rahman
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre of Excellence in Exciton Science, Monash University, Clayton, Victoria 3800, Australia
| | - Ruo-Si Chen
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ping Koy Lam
- Department of Quantum Science & Technology, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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13
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Hu L, Li X, Guo X, Xu M, Shi Y, Herve NB, Xiang R, Zhang Q. Electret Modulation Strategy to Enhance the Photosensitivity Performance of Two-Dimensional Molybdenum Sulfide. ACS APPLIED MATERIALS & INTERFACES 2023; 15:59704-59713. [PMID: 38087993 DOI: 10.1021/acsami.3c14836] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Due to the limited light absorption efficiency of atomic thickness layers and the existence of quenching effects, photodetectors solely made of transition metal dichalcogenides (TMDs) have exhibited an unsatisfactory detection performance. In this article, electret/TMD hybridized devices were proposed by vertically coupling a MoS2 channel and the PTFE film, which reveals an optimized photodetection behavior. Negative charges were generated in the PTFE layer through the corona charging method, akin to applying a negative bias on the MoS2 channel in lieu of a traditional voltage-driven back gate. Under a charging voltage of -6 kV, PTFE/MoS2 devices reveal improved photodetection performance (Rhybrid = 67.95A/W versus Ronly = 3.37 A/W, at 470 nm, 1.20 mW cm-2) and faster recovery speed (τd(hybrid) = 2000 ms versus τd(only) = 2900 ms) compared to those bare MoS2 counterparts. The optimal detection performance (2 orders of magnitude) was obtained when the charging voltage was -2 kV, limited by the minimum of the carrier density in MoS2 channels. This study provides an alternative strategy to optimize optoelectronic devices based on the 2D components through non-voltage-driven gating.
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Affiliation(s)
- Lian Hu
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Xin Li
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Xinyu Guo
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Minxuan Xu
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Yueqin Shi
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Nduwarugira B Herve
- School of Mechanical Engineering, Zhejiang University, Hangzhou 310003, China
| | - Rong Xiang
- School of Mechanical Engineering, Zhejiang University, Hangzhou 310003, China
| | - Qi Zhang
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
- School of Mechanical Engineering, Zhejiang University, Hangzhou 310003, China
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14
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Li Z, Zhang XY, Ma R, Fu T, Zeng Y, Hu C, Cheng Y, Wang C, Wang Y, Feng Y, Taniguchi T, Watanabe K, Wang T, Liu X, Xu H. Versatile optical manipulation of trions, dark excitons and biexcitons through contrasting exciton-photon coupling. LIGHT, SCIENCE & APPLICATIONS 2023; 12:295. [PMID: 38057305 DOI: 10.1038/s41377-023-01338-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/12/2023] [Revised: 11/08/2023] [Accepted: 11/12/2023] [Indexed: 12/08/2023]
Abstract
Various exciton species in transition metal dichalcogenides (TMDs), such as neutral excitons, trions (charged excitons), dark excitons, and biexcitons, have been individually discovered with distinct light-matter interactions. In terms of valley-spin locked band structures and electron-hole configurations, these exciton species demonstrate flexible control of emission light with degrees of freedom (DOFs) such as intensity, polarization, frequency, and dynamics. However, it remains elusive to fully manipulate different exciton species on demand for practical photonic applications. Here, we investigate the contrasting light-matter interactions to control multiple DOFs of emission light in a hybrid monolayer WSe2-Ag nanowire (NW) structure by taking advantage of various exciton species. These excitons, including trions, dark excitons, and biexcitons, are found to couple independently with propagating surface plasmon polaritons (SPPs) of Ag NW in quite different ways, thanks to the orientations of transition dipoles. Consistent with the simulations, the dark excitons and dark trions show extremely high coupling efficiency with SPPs, while the trions demonstrate directional chiral-coupling features. This study presents a crucial step towards the ultimate goal of exploiting the comprehensive spectrum of TMD excitons for optical information processing and quantum optics.
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Affiliation(s)
- Zhe Li
- School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, Wuhan University, 430072, Wuhan, China
| | - Xin-Yuan Zhang
- School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, Wuhan University, 430072, Wuhan, China
- Wuhan University Shenzhen Research Institute, 518057, Shenzhen, China
| | - Rundong Ma
- School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, Wuhan University, 430072, Wuhan, China
| | - Tong Fu
- School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, Wuhan University, 430072, Wuhan, China
| | - Yan Zeng
- School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, Wuhan University, 430072, Wuhan, China
| | - Chong Hu
- School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, Wuhan University, 430072, Wuhan, China
- Wuhan University Shenzhen Research Institute, 518057, Shenzhen, China
| | - Yufeng Cheng
- School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, Wuhan University, 430072, Wuhan, China
| | - Cheng Wang
- School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, Wuhan University, 430072, Wuhan, China
| | - Yun Wang
- Institute of Advanced Synthesis, School of Chemistry and Molecular Engineering, Nanjing Tech University, 211816, Nanjing, China
| | - Yuhua Feng
- Institute of Advanced Synthesis, School of Chemistry and Molecular Engineering, Nanjing Tech University, 211816, Nanjing, China
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, 305-0044, Tsukuba, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, 305-0044, Tsukuba, Japan
| | - Ti Wang
- School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, Wuhan University, 430072, Wuhan, China.
| | - Xiaoze Liu
- School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, Wuhan University, 430072, Wuhan, China.
- Wuhan University Shenzhen Research Institute, 518057, Shenzhen, China.
- Wuhan Institute of Quantum Technology, 430206, Wuhan, China.
| | - Hongxing Xu
- School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, Wuhan University, 430072, Wuhan, China.
- Wuhan Institute of Quantum Technology, 430206, Wuhan, China.
- School of Microelectronics, Wuhan University, 430072, Wuhan, China.
- Henan Academy of Sciences, 450046, Zhengzhou, China.
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