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Goldberg I, Elkhouly K, Annavarapu N, Hamdad S, Gonzalez MC, Genoe J, Gehlhaar R, Heremans P. Toward Thin-Film Laser Diodes with Metal Halide Perovskites. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2314193. [PMID: 39177182 DOI: 10.1002/adma.202314193] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/26/2023] [Revised: 06/17/2024] [Indexed: 08/24/2024]
Abstract
Metal halide perovskite semiconductors hold a strong promise for enabling thin-film laser diodes. Perovskites distinguish themselves from other non-epitaxial media primarily through their ability to maintain performance at high current densities, which is a critical requirement for achieving injection lasing. Coming in a wide range of varieties, numerous perovskites delivered low-threshold optical amplified spontaneous emission and optically pumped lasing when combined with a suitable optical cavity. A progression toward electrically pumped lasing requires the development of efficient light-emitting structures with reduced optical losses and high radiative efficiency at lasing-level current densities. This involves a set of important trade-offs in terms of material choice, stack and waveguide design, as well as resonator integration. In this Perspective, the key milestones are highlighted that have been achieved in the study of passive optical waveguides and light-emitting diodes, and these learnings are translated toward more complex laser diode architectures. Finally, a novel resonator integration route is proposed that is capable of relaxing optical and electrical design constraints.
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Affiliation(s)
- Iakov Goldberg
- IMEC, Kapeldreef 75, Leuven, 3001, Belgium
- ESAT, KU Leuven, Kasteelpark Arenberg, Leuven, 3001, Belgium
| | - Karim Elkhouly
- IMEC, Kapeldreef 75, Leuven, 3001, Belgium
- ESAT, KU Leuven, Kasteelpark Arenberg, Leuven, 3001, Belgium
| | - Nirav Annavarapu
- IMEC, Kapeldreef 75, Leuven, 3001, Belgium
- ESAT, KU Leuven, Kasteelpark Arenberg, Leuven, 3001, Belgium
| | - Sarah Hamdad
- IMEC, Kapeldreef 75, Leuven, 3001, Belgium
- ESAT, KU Leuven, Kasteelpark Arenberg, Leuven, 3001, Belgium
| | - Maider Calderon Gonzalez
- IMEC, Kapeldreef 75, Leuven, 3001, Belgium
- ESAT, KU Leuven, Kasteelpark Arenberg, Leuven, 3001, Belgium
| | - Jan Genoe
- IMEC, Kapeldreef 75, Leuven, 3001, Belgium
- ESAT, KU Leuven, Kasteelpark Arenberg, Leuven, 3001, Belgium
| | | | - Paul Heremans
- IMEC, Kapeldreef 75, Leuven, 3001, Belgium
- ESAT, KU Leuven, Kasteelpark Arenberg, Leuven, 3001, Belgium
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Zhang L, Wang Y, Chu A, Zhang Z, Liu M, Shen X, Li B, Li X, Yi C, Song R, Liu Y, Zhuang X, Duan X. Facet-selective growth of halide perovskite/2D semiconductor van der Waals heterostructures for improved optical gain and lasing. Nat Commun 2024; 15:5484. [PMID: 38942769 PMCID: PMC11213932 DOI: 10.1038/s41467-024-49364-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/11/2024] [Accepted: 06/03/2024] [Indexed: 06/30/2024] Open
Abstract
The tunable properties of halide perovskite/two dimensional (2D) semiconductor mixed-dimensional van der Waals heterostructures offer high flexibility for innovating optoelectronic and photonic devices. However, the general and robust growth of high-quality monocrystalline halide perovskite/2D semiconductor heterostructures with attractive optical properties has remained challenging. Here, we demonstrate a universal van der Waals heteroepitaxy strategy to synthesize a library of facet-specific single-crystalline halide perovskite/2D semiconductor (multi)heterostructures. The obtained heterostructures can be broadly tailored by selecting the coupling layer of interest, and can include perovskites varying from all-inorganic to organic-inorganic hybrid counterparts, individual transition metal dichalcogenides or 2D heterojunctions. The CsPbI2Br/WSe2 heterostructures demonstrate ultrahigh optical gain coefficient, reduced gain threshold and prolonged gain lifetime, which are attributed to the reduced energetic disorder. Accordingly, the self-organized halide perovskite/2D semiconductor heterostructure lasers show highly reproducible single-mode lasing with largely reduced lasing threshold and improved stability. Our findings provide a high-quality and versatile material platform for probing unique optoelectronic and photonic physics and developing further electrically driven on-chip lasers, nanophotonic devices and electronic-photonic integrated systems.
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Affiliation(s)
- Liqiang Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Yiliu Wang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Anshi Chu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Zhengwei Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha, Hunan, P. R. China
| | - Miaomiao Liu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Xiaohua Shen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Bailing Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Xu Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Chen Yi
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China
| | - Rong Song
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Yingying Liu
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China
| | - Xiujuan Zhuang
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, Hunan, P. R. China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, P. R. China.
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Tanghe I, Molkens K, Vandekerckhove T, Respekta D, Waters A, Huang J, Beavon J, Harankahage D, Lin CY, Chen K, Van Thourhout D, Zamkov M, Geiregat P. Two-Dimensional Electron-Hole Plasma in Colloidal Quantum Shells Enables Integrated Lasing Continuously Tunable in the Red Spectrum. ACS NANO 2024; 18:14661-14671. [PMID: 38780137 DOI: 10.1021/acsnano.4c02907] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2024]
Abstract
Combining integrated optical platforms with solution-processable materials offers a clear path toward miniaturized and robust light sources, including lasers. A limiting aspect for red-emitting materials remains the drop in efficiency at high excitation density due to non-radiative quenching pathways, such as Auger recombination. Next to this, lasers based on such materials remain ill characterized, leaving questions about their ultimate performance. Here, we show that colloidal quantum shells (QSs) offer a viable solution for a processable material platform to circumvent these issues. We first show that optical gain in QSs is mediated by a 2D plasma state of unbound electron-hole pairs, opposed to bound excitons, which gives rise to broad-band and sizable gain across the full red spectrum with record gain lifetimes and a low threshold. Moreover, at high excitation density, the emission efficiency of the plasma state does not quench, a feat we can attribute to an increased radiative recombination rate. Finally, QSs are integrated on a silicon nitride platform, enabling high spectral contrast, surface emitting, and TE-polarized lasers with ultranarrow beam divergence across the entire red spectrum from a small surface area. Our results indicate QS materials are an excellent materials platform to realize highly performant and compact on-chip light sources.
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Affiliation(s)
- Ivo Tanghe
- Photonics Research Group, Ghent University, Gent 9000, Belgium
- Physics and Chemistry of Nanostructures, Ghent University, Gent 9000, Belgium
- NOLIMITS Core Facility for Non-Linear Microscopy and Spectroscopy, Ghent University, Gent 9000, Belgium
| | - Korneel Molkens
- Photonics Research Group, Ghent University, Gent 9000, Belgium
- Physics and Chemistry of Nanostructures, Ghent University, Gent 9000, Belgium
- NOLIMITS Core Facility for Non-Linear Microscopy and Spectroscopy, Ghent University, Gent 9000, Belgium
| | | | - Dobromił Respekta
- Physics and Chemistry of Nanostructures, Ghent University, Gent 9000, Belgium
- NOLIMITS Core Facility for Non-Linear Microscopy and Spectroscopy, Ghent University, Gent 9000, Belgium
| | - Amelia Waters
- Department of Physics, Bowling Green State University, Bowling Green, Ohio 43403, United States
| | - Jiamin Huang
- Department of Physics, Bowling Green State University, Bowling Green, Ohio 43403, United States
| | - Jacob Beavon
- Department of Physics, Bowling Green State University, Bowling Green, Ohio 43403, United States
| | - Dulanjan Harankahage
- Department of Chemistry, Bowling Green State University, Bowling Green, Ohio 43403, United States
- The Center for Photochemical Sciences, Bowling Green State University, Bowling Green, Ohio 43403, United States
| | - Chao Yang Lin
- Robinson Research Institute, Victoria University of Wellington, Wellington 6012, New Zealand
| | - Kai Chen
- MacDiarmid Institute for Advanced Materials and Nanotechnology, Wellington 6012, New Zealand
- Robinson Research Institute, Victoria University of Wellington, Wellington 6012, New Zealand
- The Dodd-Walls Centre for Photonic and Quantum Technologies, University of Otago, Dunedin 9016, New Zealand
| | | | - Mikhail Zamkov
- Department of Physics, Bowling Green State University, Bowling Green, Ohio 43403, United States
- The Center for Photochemical Sciences, Bowling Green State University, Bowling Green, Ohio 43403, United States
| | - Pieter Geiregat
- Physics and Chemistry of Nanostructures, Ghent University, Gent 9000, Belgium
- NOLIMITS Core Facility for Non-Linear Microscopy and Spectroscopy, Ghent University, Gent 9000, Belgium
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Zhou P, Jin L, Liang K, Liang X, Li J, Deng X, Wang Y, Guo J, Yu L, Zhang J. Design of an ultrafast plasmonic nanolaser for high-intensity broadband emission operating at room temperature. OPTICS LETTERS 2024; 49:2930-2933. [PMID: 38824295 DOI: 10.1364/ol.518240] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2024] [Accepted: 04/12/2024] [Indexed: 06/03/2024]
Abstract
We propose a plasmonic nanolaser based on a metal-insulator-semiconductor-insulator-metal (MISIM) structure, which effectively confines light on a subwavelength scale (∼λ/14). As the pump power increases, the proposed plasmonic nanolaser exhibits broadband output characteristics of 20 nm, and the maximum output power can reach 20 µW. Furthermore, the carrier lifetime at the upper energy level in our proposed structure is measured to be about 400 fs using a double pump-probe excitation. The ultrafast characteristic is attributed to the inherent Purcell effect of plasmonic systems. Our work paves the way toward deep-subwavelength mode confinement and ultrafast femtosecond plasmonic lasers in spaser-based interconnected, eigenmode engineering of plasmonic nanolasers, nano-LEDs, and spontaneous emission control.
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Hens Z, Delerue CD. A tight-binding model for illustrating exciton confinement in semiconductor nanocrystals. J Chem Phys 2024; 160:114106. [PMID: 38506285 DOI: 10.1063/5.0192031] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/18/2023] [Accepted: 02/26/2024] [Indexed: 03/21/2024] Open
Abstract
The Brus equation describes the relation between the lowest energy of an electron-hole pair and the size of a semiconductor crystallite. However, taking the strong confinement regime as a starting point, the equation does not cover the transition from weak to strong confinement, the accompanying phenomenon of charge-carrier delocalization, or the change in the transition dipole moment of the electron-hole pair state. Here, we use a one-dimensional, two-particle Hubbard model for interacting electron-hole pairs that extends the well-known tight-binding approach through a point-like electron-hole interaction. On infinite chains, the resulting exciton states exhibit the known relation between the Bohr radius, the exciton binding energy, and the effective mass of the charge carriers. Moreover, by introducing infinite-well boundary conditions, the model enables the transition of the exciton states from weak to strong confinement to be tracked, while straightforward adaptations provide insights into the relation between defects, exciton localization, and confinement. In addition, by introducing the dipole operator, the variation of the transition dipole moment can be mapped when shifting from electron-hole pairs in strong confinement to delocalized and localized excitons in weak confinement. The proposed model system can be readily implemented and extended to different multi-carrier states, thus providing researchers a tool for exploring, understanding, and teaching confinement effects in semiconductor nanocrystals under different conditions.
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Affiliation(s)
- Z Hens
- Physics and Chemistry of Nanostructures, Ghent University, 9000 Gent, Belgium
| | - C D Delerue
- Université de Lille, CNRS, Université Polytechnique Hauts-de-France, Junia, UMR 8520 - IEMN, F-59000 Lille, France
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Zamkov M. Bulk semiconductor nanocrystals transform solution-processed gain media. NATURE NANOTECHNOLOGY 2023; 18:1383-1384. [PMID: 37798562 DOI: 10.1038/s41565-023-01493-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/07/2023]
Affiliation(s)
- Mikhail Zamkov
- Center for Photochemical Sciences, Department of Physics, Bowling Green State University, Bowling Green, OH, USA.
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