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Severin B, Lennon DT, Camenzind LC, Vigneau F, Fedele F, Jirovec D, Ballabio A, Chrastina D, Isella G, de Kruijf M, Carballido MJ, Svab S, Kuhlmann AV, Geyer S, Froning FNM, Moon H, Osborne MA, Sejdinovic D, Katsaros G, Zumbühl DM, Briggs GAD, Ares N. Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning. Sci Rep 2024; 14:17281. [PMID: 39068242 PMCID: PMC11283483 DOI: 10.1038/s41598-024-67787-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/15/2024] [Accepted: 07/16/2024] [Indexed: 07/30/2024] Open
Abstract
The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions and each device realisation requires a different tuning protocol. We demonstrate that it is possible to automate the tuning of a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate Ge/SiGe heterostructure double quantum dot device from scratch with the same algorithm. We achieve tuning times of 30, 10, and 92 min, respectively. The algorithm also provides insight into the parameter space landscape for each of these devices, allowing for the characterization of the regions where double quantum dot regimes are found. These results show that overarching solutions for the tuning of quantum devices are enabled by machine learning.
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Affiliation(s)
- B Severin
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - D T Lennon
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - L C Camenzind
- Department of Physics, University of Basel, Basel, 4056, Switzerland
| | - F Vigneau
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - F Fedele
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - D Jirovec
- Institute of Science and Technology Austria, Am Campus 1, Klosterneuburg, 3400, Austria
| | - A Ballabio
- L-NESS, Dipartimento di Fisica, Politecnico di Milano, Polo di Como, ViaAnzani 42, Como, 22100, Italy
| | - D Chrastina
- L-NESS, Dipartimento di Fisica, Politecnico di Milano, Polo di Como, ViaAnzani 42, Como, 22100, Italy
| | - G Isella
- L-NESS, Dipartimento di Fisica, Politecnico di Milano, Polo di Como, ViaAnzani 42, Como, 22100, Italy
| | - M de Kruijf
- Department of Physics, University of Basel, Basel, 4056, Switzerland
| | - M J Carballido
- Department of Physics, University of Basel, Basel, 4056, Switzerland
| | - S Svab
- Department of Physics, University of Basel, Basel, 4056, Switzerland
| | - A V Kuhlmann
- Department of Physics, University of Basel, Basel, 4056, Switzerland
| | - S Geyer
- Department of Physics, University of Basel, Basel, 4056, Switzerland
| | - F N M Froning
- Department of Physics, University of Basel, Basel, 4056, Switzerland
| | - H Moon
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - M A Osborne
- Department of Engineering Science, University of Oxford, Parks Road, Oxford, OX1 3PJ, UK
| | - D Sejdinovic
- Department of Statistics, University of Oxford, 24-29 St Giles, Oxford, OX1 3LB, UK
| | - G Katsaros
- Institute of Science and Technology Austria, Am Campus 1, Klosterneuburg, 3400, Austria
| | - D M Zumbühl
- Department of Physics, University of Basel, Basel, 4056, Switzerland
| | - G A D Briggs
- Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
| | - N Ares
- Department of Engineering Science, University of Oxford, Parks Road, Oxford, OX1 3PJ, UK.
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