1
|
Hui J, Hu Q, Yuan H, Shi R, Huang X, Wu Y, Ren Y, Zhang Z, Wang H. High-Throughput Study of Amorphous Stability and Optical Properties of Superlattice-Like Ge-Sb-Te Thin Films. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307792. [PMID: 38037483 DOI: 10.1002/smll.202307792] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2023] [Revised: 11/05/2023] [Indexed: 12/02/2023]
Abstract
A high-throughput ion beam sputtering system is used to synthesize compositional gradient superlattice-like (SLL) thin film libraries of Ge-Sb-Te alloys over the entire phase diagram. The optical properties and structural evolution of the Ge-Sb-Te combinatorial SLL thin film are investigated. A systematic screening over the annealing temperature, annealing time, and modulation period has elucidated the critical factors that affect the stability of the metastable phase and optical properties. It is found that amorphous stability and optical constant are highly dependent on the modulation period and chemical composition of the thin film. This data-driven approach offers new perspectives for accelerating the development of new materials with excellent optical and amorphous stability and for exploring their mechanisms, by greatly expanding the dataset of Ge-Sb-Te alloys with SLL structures through high-throughput experiments.
Collapse
Affiliation(s)
- Jian Hui
- School of Materials Science and Engineering, Zhangjiang Institute for Advanced Study, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Qingyun Hu
- School of Materials Science and Engineering, Zhangjiang Institute for Advanced Study, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Hongjian Yuan
- School of Materials Science and Engineering, Zhangjiang Institute for Advanced Study, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Ruiqian Shi
- School of Materials Science and Engineering, Zhangjiang Institute for Advanced Study, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xiang Huang
- China-UK Low Carbon College, Shanghai Jiao Tong University, Shanghai, 201306, China
| | - Yuanyuan Wu
- Boyue Instruments Co., Ltd, Shanghai, 201600, China
| | - Yang Ren
- Department of Physics, City University of Hong Kong, Kowloon, Hong Kong, 9999077, China
| | - Zhan Zhang
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Argonne, IL, 60439, USA
| | - Hong Wang
- School of Materials Science and Engineering, Zhangjiang Institute for Advanced Study, Shanghai Jiao Tong University, Shanghai, 200240, China
- Shanghai Key Laboratory of High Temperature Materials and Precision Forming, Shanghai Jiaotong University, Shanghai, 200240, China
| |
Collapse
|
2
|
Kim S, Lee YS, Kim NH. Homogeneity- and Stoichiometry-Induced Electrical and Optical Properties of Cu-Se Thin Films by RF Sputtering Power. MATERIALS (BASEL, SWITZERLAND) 2023; 16:6087. [PMID: 37763365 PMCID: PMC10533086 DOI: 10.3390/ma16186087] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/01/2023] [Revised: 09/04/2023] [Accepted: 09/04/2023] [Indexed: 09/29/2023]
Abstract
P-type Cu-Se thin films were deposited on glass substrates at room temperature using radio frequency magnetron sputtering by a single multi-component CuSe2 target. When using a multi-component target, the impact of the sputtering power on the homogeneity and stoichiometry within the thin films should be investigated in the depth direction to demonstrate a secondary effect on the electrical and optical properties of the thin films. Systematic characterization of the Cu-Se thin films, including the morphology, microstructure, chemical composition, and depth-directional chemical bonding state and defect structure of the thin films, revealed that the sputtering power played an important role in the homogeneity and stoichiometry of the thin films. At very low and very high sputtering power levels, the Cu-Se thin films exhibited more deviations from stoichiometry, while an optimized sputtering power resulted in more homogenous thin films with improved stoichiometry across the entire thin film thickness in the X-ray photoelectron spectroscopy depth profile, despite showing Se deficiency at all depths. A rapid decrease in carrier concentration, indicating a reduction in the net effect of total defects, was obtained at the optimized sputtering power with less deviation from stoichiometry in the Cu-Se thin films and the closest stoichiometric ratio at an intermediate depth.
Collapse
Affiliation(s)
| | | | - Nam-Hoon Kim
- Department of Electrical Engineering, Chosun University, Gwangju 61452, Republic of Korea; (S.K.); (Y.-S.L.)
| |
Collapse
|
3
|
Tailoring of Multisource Deposition Conditions towards Required Chemical Composition of Thin Films. NANOMATERIALS 2022; 12:nano12111830. [PMID: 35683686 PMCID: PMC9182166 DOI: 10.3390/nano12111830] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/20/2022] [Revised: 05/21/2022] [Accepted: 05/25/2022] [Indexed: 11/26/2022]
Abstract
The model to tailor the required chemical composition of thin films fabricated via multisource deposition, exploiting basic physicochemical constants of source materials, is developed. The model is experimentally verified for the two-source depositions of chalcogenide thin films from Ga–Sb–Te system (tie-lines GaSb–GaTe and GaSb–Te). The thin films are deposited by radiofrequency magnetron sputtering using GaSb, GaTe, and Te targets. Prepared thin films are characterized by means of energy dispersive X-ray analysis coupled with a scanning electron microscope to determine the chemical composition and by variable angle spectroscopic ellipsometry to establish film thickness. Good agreement between results of calculations and experimentally determined compositions of the co-deposited thin films is achieved for both the above-mentioned tie-lines. Moreover, in spite of all the applied simplifications, the proposed model is robust to be generally used for studies where the influence of thin film composition on their properties is investigated.
Collapse
|
4
|
Prokeš L, Gorylová M, Čermák Šraitrová K, Nazabal V, Havel J, Němec P. Arsenic-Doped SnSe Thin Films Prepared by Pulsed Laser Deposition. ACS OMEGA 2021; 6:17483-17491. [PMID: 34278134 PMCID: PMC8280661 DOI: 10.1021/acsomega.1c01892] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/09/2021] [Accepted: 06/17/2021] [Indexed: 05/08/2023]
Abstract
Pulsed UV laser deposition was exploited for the preparation of thin Sn50-x As x Se50 (x = 0, 0.05, 0.5, and 2.5) films with the aim of investigating the influence of low arsenic concentration on the properties of the deposited layers. It was found that the selected deposition method results in growth of a highly (h00) oriented orthorhombic SnSe phase. The thin films were characterized by different techniques such as X-ray diffraction, scanning electron microscopy with energy-dispersive X-ray spectroscopy, atomic force microscopy, Raman scattering spectroscopy, and spectroscopic ellipsometry. From the results, it can be concluded that thin films containing 0.5 atom % of As exhibited extreme values regarding crystallite size, unit cell volume, or refractive index that significantly differ from those of other samples. Laser ablation with quadrupole ion trap time-of-flight mass spectrometry was used to identify and compare species present in the plasma originating from the interaction of a laser pulse with solid-state Sn50-x As x Se50 materials in both forms, i.e. parent powders as well as deposited thin films. The mass spectra of both materials were similar; particularly, signals of Sn m Se n + clusters with low m and n values were observed.
Collapse
Affiliation(s)
- Lubomír Prokeš
- Department
of Chemistry, Faculty of Science, Masaryk
University, Kamenice 5/A14, 62500 Brno, Czech Republic
| | - Magdaléna Gorylová
- Department
of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice, Czech Republic
| | - Kateřina Čermák Šraitrová
- Institute
of Applied Physics and Mathematics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice, Czech Republic
| | - Virginie Nazabal
- Department
of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice, Czech Republic
- Univ
Rennes, CNRS, ISCR UMR6226, ScanMAT UMS
2001, F-35000 Rennes, France
| | - Josef Havel
- Department
of Chemistry, Faculty of Science, Masaryk
University, Kamenice 5/A14, 62500 Brno, Czech Republic
| | - Petr Němec
- Department
of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice, Czech Republic
| |
Collapse
|
5
|
Mihai C, Sava F, Simandan ID, Galca AC, Burducea I, Becherescu N, Velea A. Structural and optical properties of amorphous Si-Ge-Te thin films prepared by combinatorial sputtering. Sci Rep 2021; 11:11755. [PMID: 34083613 PMCID: PMC8175571 DOI: 10.1038/s41598-021-91138-x] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/30/2020] [Accepted: 05/21/2021] [Indexed: 11/29/2022] Open
Abstract
The lack of order in amorphous chalcogenides offers them novel properties but also adds increased challenges in the discovery and design of advanced functional materials. The amorphous compositions in the Si–Ge–Te system are of interest for many applications such as optical data storage, optical sensors and Ovonic threshold switches. But an extended exploration of this system is still missing. In this study, magnetron co-sputtering is used for the combinatorial synthesis of thin film libraries, outside the glass formation domain. Compositional, structural and optical properties are investigated and discussed in the framework of topological constraint theory. The materials in the library are classified as stressed-rigid amorphous networks. The bandgap is heavily influenced by the Te content while the near-IR refractive index dependence on Ge concentration shows a minimum, which could be exploited in applications. A transition from a disordered to a more ordered amorphous network at 60 at% Te, is observed. The thermal stability study shows that the formed crystalline phases are dictated by the concentration of Ge and Te. New amorphous compositions in the Si–Ge–Te system were found and their properties explored, thus enabling an informed and rapid material selection and design for applications.
Collapse
Affiliation(s)
- C Mihai
- National Institute of Materials Physics, 077125, Magurele, Romania
| | - F Sava
- National Institute of Materials Physics, 077125, Magurele, Romania
| | - I D Simandan
- National Institute of Materials Physics, 077125, Magurele, Romania
| | - A C Galca
- National Institute of Materials Physics, 077125, Magurele, Romania
| | - I Burducea
- Horia Hulubei National Institute of Physics and Nuclear Engineering, 077125, Magurele, Romania
| | - N Becherescu
- Apel Laser Ltd., Vanatorilor 25, 077135, Mogosoaia, Romania
| | - A Velea
- National Institute of Materials Physics, 077125, Magurele, Romania.
| |
Collapse
|
6
|
Baillieul M, Baudet E, Michel K, Moreau J, Němec P, Boukerma K, Colas F, Charrier J, Bureau B, Rinnert E, Nazabal V. Toward Chalcogenide Platform Infrared Sensor Dedicated to the In Situ Detection of Aromatic Hydrocarbons in Natural Waters via an Attenuated Total Reflection Spectroscopy Study. SENSORS 2021; 21:s21072449. [PMID: 33918118 PMCID: PMC8036779 DOI: 10.3390/s21072449] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/31/2020] [Revised: 03/18/2021] [Accepted: 03/26/2021] [Indexed: 11/16/2022]
Abstract
The objective of this study is to demonstrate the successful functionalization of the surface of a chalcogenide infrared waveguide with the ultimate goal of developing an infrared micro-sensor device. First, a polyisobutylene coating was selected by testing its physico-chemical compatibility with a Ge-Sb-Se selenide surface. To simulate the chalcogenide platform infrared sensor, the detection of benzene, toluene, and ortho-, meta- and para-xylenes was efficaciously performed using a polyisobutylene layer spin-coated on 1 and 2.5 µm co-sputtered selenide films of Ge28Sb12Se60 composition deposited on a zinc selenide prism used for attenuated total reflection spectroscopy. The thickness of the polymer coating was optimized by attenuated total reflection spectroscopy to achieve the highest possible attenuation of water absorption while maintaining the diffusion rate of the pollutant through the polymer film compatible with the targeted in situ analysis. Then, natural water, i.e., groundwater, wastewater, and seawater, was sampled for detection measurement by means of attenuated total reflection spectroscopy. This study is a valuable contribution concerning the functionalization by a hydrophobic polymer compatible with a chalcogenide optical sensor designed to operate in the mid-infrared spectral range to detect in situ organic molecules in natural water.
Collapse
Affiliation(s)
- Marion Baillieul
- Institut des Sciences Chimiques de Rennes, UMR-CNRS 6226, Equipe Verres et Céramiques, Université de Rennes 1, 35042 Rennes, France; (M.B.); (E.B.); (B.B.)
- IFREMER, Centre Bretagne, Laboratoire Détection, Capteurs et Mesures, CS10070, 29280 Plouzané, France; (J.M.); (K.B.); (F.C.); (E.R.)
| | - Emeline Baudet
- Institut des Sciences Chimiques de Rennes, UMR-CNRS 6226, Equipe Verres et Céramiques, Université de Rennes 1, 35042 Rennes, France; (M.B.); (E.B.); (B.B.)
| | - Karine Michel
- BRGM, Direction Eau, Environnement et Ecotechnologies, Unité Bio-Géochimie Environnementale et Qualité de l’Eau, 45060 Orléans, France;
| | - Jonathan Moreau
- IFREMER, Centre Bretagne, Laboratoire Détection, Capteurs et Mesures, CS10070, 29280 Plouzané, France; (J.M.); (K.B.); (F.C.); (E.R.)
| | - Petr Němec
- Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 53210 Pardubice, Czech Republic;
| | - Kada Boukerma
- IFREMER, Centre Bretagne, Laboratoire Détection, Capteurs et Mesures, CS10070, 29280 Plouzané, France; (J.M.); (K.B.); (F.C.); (E.R.)
| | - Florent Colas
- IFREMER, Centre Bretagne, Laboratoire Détection, Capteurs et Mesures, CS10070, 29280 Plouzané, France; (J.M.); (K.B.); (F.C.); (E.R.)
| | - Joël Charrier
- FOTON-UMR-CNRS 6082, ENSSAT BP80518, 22305 Lannion, France;
| | - Bruno Bureau
- Institut des Sciences Chimiques de Rennes, UMR-CNRS 6226, Equipe Verres et Céramiques, Université de Rennes 1, 35042 Rennes, France; (M.B.); (E.B.); (B.B.)
| | - Emmanuel Rinnert
- IFREMER, Centre Bretagne, Laboratoire Détection, Capteurs et Mesures, CS10070, 29280 Plouzané, France; (J.M.); (K.B.); (F.C.); (E.R.)
| | - Virginie Nazabal
- Institut des Sciences Chimiques de Rennes, UMR-CNRS 6226, Equipe Verres et Céramiques, Université de Rennes 1, 35042 Rennes, France; (M.B.); (E.B.); (B.B.)
- Correspondence:
| |
Collapse
|
7
|
Frantz JA, Clabeau A, Myers JD, Bekele RY, Nguyen VQ, Sanghera JS. Thermal tuning of arsenic selenide glass thin films and devices. OPTICS EXPRESS 2020; 28:34744-34753. [PMID: 33182935 DOI: 10.1364/oe.409531] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/07/2020] [Accepted: 10/22/2020] [Indexed: 06/11/2023]
Abstract
We present a method of post-deposition tuning of the optical properties of thin film dielectric filters and mirrors containing chalcogenide glass (ChG) layers by thermally adjusting their refractive index. A common challenge associated with the use of ChG films in practical applications is that they suffer from slight run-to-run variations in optical properties resulting from hard-to-control changes in source material and deposition conditions. These variations lead to inconsistencies in optical constants, making the fabrication of devices with prescribed optical properties challenging. In this paper, we present new work that takes advantage of the large variation of a ChG films' refractive index as a function of annealing. We have carried out extensive characterization of the thermal index tuning and thickness change of arsenic selenide (As2Se3) ChG thin films and observed refractive index changes larger than 0.1 in some cases. We show results for refractive index as a function of annealing time and temperature and propose a model to describe this behavior based on bond rearrangement. We apply thermal refractive index tuning to permanently shift the resonance of a Fabry-Perot filter and the cutoff wavelength of a Bragg reflector. The Bragg reflector, consisting of alternating As2Se3 and CaF2 layers, exhibits high reflectance across a ∼550 nm band with only five layers. Modeling results are compared with spectroscopic measurements, demonstrating good agreement.
Collapse
|
8
|
Louvet G, Normani S, Bodiou L, Gutwirth J, Lemaitre J, Pirasteh P, Doualan JL, Benardais A, Ledemi Y, Messaddeq Y, Němec P, Charrier J, Nazabal V. Co-sputtered Pr 3+-doped Ga-Ge-Sb-Se active waveguides for mid-infrared operation. OPTICS EXPRESS 2020; 28:22511-22523. [PMID: 32752511 DOI: 10.1364/oe.398434] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/22/2020] [Accepted: 06/30/2020] [Indexed: 06/11/2023]
Abstract
This work reports on the properties of luminescent waveguides based on quaternary Ga-Ge-Sb-Se amorphous thin films doped with praseodymium. The waveguides were fabricated via magnetron co-sputtering, followed by inductively coupled plasma reactive ion etching. The initial thin film thickness and optical properties were assessed and the spectroscopic properties of the waveguides were measured. The measurements show promising results-it is possible to obtain mid-infrared fluorescence at 2.5 and 4.5 µm by injecting near-infrared light at 1.5 µm as the pump beam. By comparing waveguides with various praseodymium concentrations, the optimal doping content for maximum fluorescence intensity was identified to be close to 4100 ppmw. Finally, correlation between the intensity of mid-infrared emission and the width/length of the waveguide is shown.
Collapse
|
9
|
Dory JB, Castro-Chavarria C, Verdy A, Jager JB, Bernard M, Sabbione C, Tessaire M, Fédéli JM, Coillet A, Cluzel B, Noé P. Ge-Sb-S-Se-Te amorphous chalcogenide thin films towards on-chip nonlinear photonic devices. Sci Rep 2020; 10:11894. [PMID: 32681142 PMCID: PMC7367863 DOI: 10.1038/s41598-020-67377-9] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/06/2019] [Accepted: 05/13/2020] [Indexed: 11/18/2022] Open
Abstract
Thanks to their unique optical properties Ge–Sb–S–Se–Te amorphous chalcogenide materials and compounds offer tremendous opportunities of applications, in particular in near and mid-infrared range. This spectral range is for instance of high interest for photonics or optical sensors. Using co-sputtering technique of chalcogenide compound targets in a 200 mm industrial deposition tool, we show how by modifying the amorphous structure of GeSbwSxSeyTez chalcogenide thin films one can significantly tailor their linear and nonlinear optical properties. Modelling of spectroscopic ellipsometry data collected on the as-deposited chalcogenide thin films is used to evaluate their linear and nonlinear properties. Moreover, Raman and Fourier-transform infrared spectroscopies permitted to get a description of their amorphous structure. For the purpose of applications, their thermal stability upon annealing is also evaluated. We demonstrate that depending on the GeSbwSxSeyTez film composition a trade-off between a high transparency in near- or mid-infrared ranges, strong nonlinearity and good thermal stability can be found in order to use such materials for applications compatible with the standard CMOS integration processes of microelectronics and photonics.
Collapse
Affiliation(s)
- J-B Dory
- Université Grenoble Alpes, CEA, LETI, MINATEC Campus, 17 Avenue des Martyrs, 38000, Grenoble, France
| | - C Castro-Chavarria
- Université Grenoble Alpes, CEA, LETI, MINATEC Campus, 17 Avenue des Martyrs, 38000, Grenoble, France
| | - A Verdy
- Université Grenoble Alpes, CEA, LETI, MINATEC Campus, 17 Avenue des Martyrs, 38000, Grenoble, France
| | - J-B Jager
- Université Grenoble Alpes, CEA, IRIG, MINATEC Campus, 17 Avenue des Martyrs, 38000, Grenoble, France
| | - M Bernard
- Université Grenoble Alpes, CEA, LETI, MINATEC Campus, 17 Avenue des Martyrs, 38000, Grenoble, France
| | - C Sabbione
- Université Grenoble Alpes, CEA, LETI, MINATEC Campus, 17 Avenue des Martyrs, 38000, Grenoble, France
| | - M Tessaire
- Université Grenoble Alpes, CEA, LETI, MINATEC Campus, 17 Avenue des Martyrs, 38000, Grenoble, France
| | - J-M Fédéli
- Université Grenoble Alpes, CEA, LETI, MINATEC Campus, 17 Avenue des Martyrs, 38000, Grenoble, France
| | - A Coillet
- ICB, UMR CNRS 6303, Université de Bourgogne Franche Comté, 9, Avenue Alain-Savary, BP 47870, 21078, Dijon cedex, France
| | - B Cluzel
- ICB, UMR CNRS 6303, Université de Bourgogne Franche Comté, 9, Avenue Alain-Savary, BP 47870, 21078, Dijon cedex, France
| | - P Noé
- Université Grenoble Alpes, CEA, LETI, MINATEC Campus, 17 Avenue des Martyrs, 38000, Grenoble, France.
| |
Collapse
|
10
|
Normani S, Louvet G, Baudet E, Bouška M, Gutwirth J, Starecki F, Doualan JL, Ledemi Y, Messaddeq Y, Adam JL, Němec P, Nazabal V. Comparative study of Er 3+-doped Ga-Ge-Sb-S thin films fabricated by sputtering and pulsed laser deposition. Sci Rep 2020; 10:7997. [PMID: 32409661 PMCID: PMC7224381 DOI: 10.1038/s41598-020-64092-3] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/07/2020] [Accepted: 04/09/2020] [Indexed: 11/30/2022] Open
Abstract
Despite the renewed interest in rare earth-doped chalcogenide glasses lying mainly in mid-infrared applications, a few comprehensive studies so far have presented the photoluminescence of amorphous chalcogenide films from visible to mid-infrared. This work reports the fabrication of luminescent quaternary sulfide thin films using radio-frequency sputtering and pulsed laser deposition, and the characterization of their chemical composition, morphology, structure, refractive index and Er3+ photoluminescence. The study of Er3+ 4I13/2 level lifetimes enables developing suitable deposition parameters; the dependency of composition, structural and spectroscopic properties on deposition parameters provides a way to tailor the RE-doped thin film properties. The surface roughness is very low for both deposition methods, ensuring reasonable propagation optical losses. The effects of annealing on the sulfide films spectroscopy and lifetimes were assessed. PLD appears consistent composition-wise, and largely independent of the deposition conditions, but radiofrequency magnetron sputtering seems to be more versatile, as one may tailor the film properties through deposition parameters manipulation. The luminescence via rare earth-doped chalcogenide waveguiding micro-structures might find easy-to-use applications concerning telecommunications or on-chip optical sensors for which luminescent sources or amplifiers operating at different wavelengths are required.
Collapse
Affiliation(s)
- Simone Normani
- Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, 53210, Pardubice, Czech Republic
| | - Geoffrey Louvet
- Univ Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes) - UMR 6226, F-35000, Rennes, France.,Centre d'Optique, Photonique et Laser (COPL), 2375 rue de la Terrasse, Université Laval, Québec, Qc, Canada
| | - Emeline Baudet
- Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, 53210, Pardubice, Czech Republic
| | - Marek Bouška
- Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, 53210, Pardubice, Czech Republic
| | - Jan Gutwirth
- Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, 53210, Pardubice, Czech Republic
| | - Florent Starecki
- CIMAP UMR-CNRS 6252, Université de Caen Normandie, 14050, Caen, France
| | | | - Yannick Ledemi
- Centre d'Optique, Photonique et Laser (COPL), 2375 rue de la Terrasse, Université Laval, Québec, Qc, Canada
| | - Younes Messaddeq
- Centre d'Optique, Photonique et Laser (COPL), 2375 rue de la Terrasse, Université Laval, Québec, Qc, Canada
| | - Jean-Luc Adam
- Univ Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes) - UMR 6226, F-35000, Rennes, France
| | - Petr Němec
- Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, 53210, Pardubice, Czech Republic
| | - Virginie Nazabal
- Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, 53210, Pardubice, Czech Republic. .,Univ Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes) - UMR 6226, F-35000, Rennes, France.
| |
Collapse
|
11
|
Bouška M, Nazabal V, Gutwirth J, Halenkovič T, Přikryl J, Normani S, Němec P. GaTe-Sb 2Te 3 thin-films phase change characteristics. OPTICS LETTERS 2020; 45:1067-1070. [PMID: 32108771 DOI: 10.1364/ol.386779] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/24/2019] [Accepted: 01/20/2020] [Indexed: 06/10/2023]
Abstract
A radio frequency magnetron co-sputtering technique exploiting GaTe and ${\rm Sb}_2 {\rm Te}_3$Sb2Te3 targets was used for the fabrication of Ga-Sb-Te thin films. Prepared layers cover broad region of chemical composition (${\sim}{10.0 {-} 26.3}\,\, {\rm at.}$∼10.0-26.3at. % of Ga, ${\sim}{19.9 {-} 34.4}\,\, {\rm at.}$∼19.9-34.4at. % of Sb) while keeping Te content fairly constant (53.8-55.6 at. % of Te). Upon crystallization induced by annealing, large variations in electrical contrast were found, reaching a sheet resistance ratio of ${{R}_{\rm annealed}}/{{R}_{\rm as - deposited}}\;\sim{2.2} \times {{10}^{ - 8}}$Rannealed/Ras-deposited∼2.2×10-8 for the ${{\rm Ga}_{26.3}}{{\rm Sb}_{19.9}}{{\rm Te}_{53.8}}$Ga26.3Sb19.9Te53.8 layer. Phase transition from the amorphous to crystalline state further leads to huge changes of optical functions demonstrated by optical contrast values up to $|\Delta n| + |\Delta k| = {4.20}$|Δn|+|Δk|=4.20 for ${{\rm Ga}_{26.3}}{{\rm Sb}_{19.9}}{{\rm Te}_{53.8}}$Ga26.3Sb19.9Te53.8 composition.
Collapse
|
12
|
Mawale R, Halenkovič T, Bouška M, Gutwirth J, Nazabal V, Bora PL, Pečinka L, Prokeš L, Havel J, Němec P. Mass spectrometric investigation of amorphous Ga-Sb-Se thin films. Sci Rep 2019; 9:10213. [PMID: 31308483 PMCID: PMC6629872 DOI: 10.1038/s41598-019-46767-8] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/14/2019] [Accepted: 07/05/2019] [Indexed: 11/11/2022] Open
Abstract
Amorphous chalcogenide thin films are widely studied due to their enhanced properties and extensive applications. Here, we have studied amorphous Ga-Sb-Se chalcogenide thin films prepared by magnetron co-sputtering, via laser ablation quadrupole ion trap time-of-flight mass spectrometry. Furthermore, the stoichiometry of the generated clusters was determined which gives information about individual species present in the plasma plume originating from the interaction of amorphous chalcogenides with high energy laser pulses. Seven different compositions of thin films (Ga content 7.6–31.7 at. %, Sb content 5.2–31.2 at. %, Se content 61.2–63.3 at. %) were studied and in each case about ~50 different clusters were identified in positive and ~20–30 clusters in negative ion mode. Assuming that polymers can influence the laser desorption (laser ablation) process, we have used parafilm as a material to reduce the destruction of the amorphous network structure and/or promote the laser ablation synthesis of heavier species from those of lower mass. In this case, many new and higher mass clusters were identified. The maximum number of (40) new clusters was detected for the Ga-Sb-Se thin film containing the highest amount of antimony (31.2 at. %). This approach opens new possibilities for laser desorption ionization/laser ablation study of other materials. Finally, for selected binary and ternary clusters, their structure was calculated by using density functional theory optimization procedure.
Collapse
Affiliation(s)
- Ravi Mawale
- Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210, Pardubice, Czech Republic
| | - Tomáš Halenkovič
- Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210, Pardubice, Czech Republic.,Institut des Sciences Chimiques de Rennes, UMR-CNRS 6226, Equipe Verres et Céramiques, Université de Rennes 1, 35042, Rennes, France
| | - Marek Bouška
- Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210, Pardubice, Czech Republic
| | - Jan Gutwirth
- Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210, Pardubice, Czech Republic
| | - Virginie Nazabal
- Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210, Pardubice, Czech Republic.,Institut des Sciences Chimiques de Rennes, UMR-CNRS 6226, Equipe Verres et Céramiques, Université de Rennes 1, 35042, Rennes, France
| | - Pankaj Lochan Bora
- Department of Chemistry, Faculty of Science, Masaryk University, Kamenice 5, 625 00, Brno, Czech Republic.,CEITEC-Central European Institute of Technology Masaryk University, Kamenice 5, 625 00, Brno, Czech Republic
| | - Lukáš Pečinka
- Department of Chemistry, Faculty of Science, Masaryk University, Kamenice 5, 625 00, Brno, Czech Republic
| | - Lubomír Prokeš
- Department of Chemistry, Faculty of Science, Masaryk University, Kamenice 5, 625 00, Brno, Czech Republic.,Department of Physical Electronics, Faculty of Science, Masaryk University, Kotlářská 2, 61137, Brno, Czech Republic.,CEPLANT, R&D Centre for Low-Cost Plasma and Nanotechnology Surface Modification, Masaryk University, Kotlářská 2, 61137, Brno, Czech Republic
| | - Josef Havel
- Department of Chemistry, Faculty of Science, Masaryk University, Kamenice 5, 625 00, Brno, Czech Republic
| | - Petr Němec
- Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210, Pardubice, Czech Republic.
| |
Collapse
|