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Abrari M, Ghanaatshoar M, Malvajerdi SS, Gholamhosseini S, Hosseini A, Sun H, Mohseni SM. Investigating various metal contacts for p-type delafossite α-CuGaO 2 to fabricate ultraviolet photodetector. Sci Rep 2023; 13:8259. [PMID: 37217774 DOI: 10.1038/s41598-023-35458-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/13/2023] [Accepted: 05/18/2023] [Indexed: 05/24/2023] Open
Abstract
Delafossite semiconductors have attracted substantial attention in the field of electro-optics owing to their unique properties and availability of p-type materials that are applicable for solar cells, photocatalysts, photodetectors (PDs) and p-type transparent conductive oxides (TCOs). The CuGaO2 (CGO), as one of the most promising p-type delafossite materials, has appealing electrical and optical properties. In this work, we are able to synthesize CGO with different phases by adopting solid-state reaction route using sputtering followed by heat treatment at different temperatures. By examining the structural properties of CGO thin films, we found that the pure delafossite phase appears at the annealing temperature of 900 °C. While at lower temperatures, delafossite phase can be observed, but along with spinel phase. Furthermore, their structural and physical characterizations indicate an improvement of material-quality at temperatures higher than 600 °C. Thereafter, we fabricated a CGO-based ultraviolet-PD (UV-PD) with a metal-semiconductor-metal (MSM) configuration which exhibits a remarkable performance compared to the other CGO-based UV-PDs and have also investigated the effect of metal contacts on the device performance. We demonstrate that UV-PD with the employment of Cu as the electrical contact shows a Schottky behavior with a responsivity of 29 mA/W with a short response time of 1.8 and 5.9 s for rise and decay times, respectively. In contrast, the UV-PD with Ag electrode has shown an improved responsivity of about 85 mA/W with a slower rise/decay time of 12.2/12.8 s. Our work sheds light on the development of p-type delafossite semiconductor for possible optoelectronics application of the future.
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Affiliation(s)
- Masoud Abrari
- Laser and Plasma Research Institute, Shahid Beheshti University, Tehran, 1983969411, Iran
| | - Majid Ghanaatshoar
- Laser and Plasma Research Institute, Shahid Beheshti University, Tehran, 1983969411, Iran.
| | - Shahab Sharifi Malvajerdi
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, Anhui, China.
| | - Saeb Gholamhosseini
- Laser and Plasma Research Institute, Shahid Beheshti University, Tehran, 1983969411, Iran
| | - Alireza Hosseini
- Laser and Plasma Research Institute, Shahid Beheshti University, Tehran, 1983969411, Iran
| | - Haiding Sun
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, Anhui, China
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Screen-Printable Silver Paste Material for Semitransparent and Flexible Metal-Semiconductor-Metal Photodetectors with Liquid-Phase Procedure. NANOMATERIALS 2022; 12:nano12142428. [PMID: 35889654 PMCID: PMC9324574 DOI: 10.3390/nano12142428] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/24/2022] [Revised: 07/06/2022] [Accepted: 07/13/2022] [Indexed: 12/10/2022]
Abstract
Photodetectors are widely applied in modern industrial fields because they convert light energy into electrical signals. We propose a printable silver (Ag) paste electrode for a highly flexible metal–semiconductor–metal (MSM) broadband visible light photodetector as a wearable and portable device. Single-crystal and surface-textured silicon substrates with thicknesses of 37.21 μm were fabricated using a wet etching process. Surface texturization on flexible Si substrates enhances the light-trapping effect and minimizes reflectance from the incident light, and the average reflectance is reduced by 16.3% with pyramid-like structures. In this study, semitransparent, conductive Ag paste electrodes were manufactured using a screen-printing with liquid-phase process to form a flexible MSM broadband visible light photodetector. The transmittance of the homemade Ag paste solution fell between 34.83% and 36.98% in the wavelength range of visible light, from 400 nm to 800 nm. The highest visible light photosensitivity was 1.75 × 104 at 19.5 W/m2. The photocurrents of the flexible MSM broadband visible light photodetector were slightly changed under concave and convex conditions, displaying stable and durable bending properties.
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Gogoi K, Chattopadhyay A. Surface Engineering of Quantum Dots for Self-Powered Ultraviolet Photodetection and Information Encryption. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2022; 38:2668-2676. [PMID: 35164501 DOI: 10.1021/acs.langmuir.1c03402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
We demonstrate fabrication of photodetectors in the UVC and UVA regions, based on surface engineering of Mn2+-doped ZnS Qdot. Mn2+-doped ZnS Qdot exhibited UVC detection with a responsivity of 0.3 ± 0.02 A·W-1 and detectivity of 1.7 ± 0.2 1011 Jones. Following this, the Qdot was surface modified with 8-hydroxyquinoline 5-sulfonic acid ligand, which resulted in the formation of a bluish green zinc quinolate complex (Zn(QS)2) at the Qdot surface (defined as the quantum dot complex, QDC) exhibiting overall white photoluminescence. The detector developed with QDC as the photoactive material exhibited a responsivity of 0.2 ± 0.02 A·W-1 and detectivity of 1.2 ± 0.2 1011 Jones in the UVA band. This shift in the detection band from UVC in Qdot to UVA in QDC, through the surface complexation mechanism, is a new approach for tuning spectral detection featured in this work. Besides, the self-powered response of both the detectors exhibited attractive photoelectric characteristics. The detectors were incorporated in a portable prototype to show their potential application toward selective UVC and UVA spectral detection. Additionally, the dual-mode emission of the QDC was used for data encryption and decryption.
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Affiliation(s)
- Kasturi Gogoi
- Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India
| | - Arun Chattopadhyay
- Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India
- Department of Chemistry, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India
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Saeed S, Dai R, Janjua RA, Huang D, Wang H, Wang Z, Ding Z, Zhang Z. Fast-Response Metal-Semiconductor-Metal Junction Ultraviolet Photodetector Based on ZnS:Mn Nanorod Networks via a Cost-Effective Method. ACS OMEGA 2021; 6:32930-32937. [PMID: 34901644 PMCID: PMC8655908 DOI: 10.1021/acsomega.1c04981] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/09/2021] [Accepted: 11/15/2021] [Indexed: 05/11/2023]
Abstract
In this work, Mn2+-doped ZnS nanorods were synthesized by a facile hydrothermal method. The morphology, structure, and composition of the as-prepared samples were investigated. The temperature-dependent photoluminescence of ZnS:Mn nanorods was analyzed, and the corresponding activation energies were calculated by using a simple two-step rate equation. Mn2+-related orange emission (4T1 → 6A1) demonstrates high stability and is comparatively less affected by the temperature variations than the defect-related emission. A metal-semiconductor-metal junction ultraviolet photodetector based on the nanorod networks has been fabricated by a cost-effective method. The device exhibits visible blindness, superior ultraviolet photodetection with a responsivity of 1.62 A/W, and significantly fast photodetection response with the rise and decay times of 12 and 25 ms, respectively.
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Affiliation(s)
- Sara Saeed
- Department
of Physics and CAS Key Laboratory of Strong-Coupled Quantum Matter
Physics, University of Science and Technology
of China, Hefei, Anhui 230026, China
| | - Rucheng Dai
- The
Center of Physical Experiments, University
of Science and Technology of China, Hefei 230026, China
| | - Raheel Ahmed Janjua
- The
Center of Physical Experiments, University
of Science and Technology of China, Hefei 230026, China
- National
Engineering Research Center for Optical Instruments, College of Optical
Science and Engineering, Zhejiang University, Hangzhou 310058, China
| | - Da Huang
- Department
of Physics, University of Science and Technology
of China, Hefei 230026, China
| | - He Wang
- Department
of Physics, University of Science and Technology
of China, Hefei 230026, China
| | - Zhongping Wang
- The
Center of Physical Experiments, University
of Science and Technology of China, Hefei 230026, China
| | - Zejun Ding
- Department
of Physics and CAS Key Laboratory of Strong-Coupled Quantum Matter
Physics, University of Science and Technology
of China, Hefei, Anhui 230026, China
| | - Zengming Zhang
- Department
of Physics and CAS Key Laboratory of Strong-Coupled Quantum Matter
Physics, University of Science and Technology
of China, Hefei, Anhui 230026, China
- The
Center of Physical Experiments, University
of Science and Technology of China, Hefei 230026, China
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Elsayed AM, Rabia M, Shaban M, Aly AH, Ahmed AM. Preparation of hexagonal nanoporous Al 2O 3/TiO 2/TiN as a novel photodetector with high efficiency. Sci Rep 2021; 11:17572. [PMID: 34475431 PMCID: PMC8413375 DOI: 10.1038/s41598-021-96200-2] [Citation(s) in RCA: 22] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/13/2021] [Accepted: 07/27/2021] [Indexed: 02/07/2023] Open
Abstract
The unique optical properties of metal nitrides enhance many photoelectrical applications. In this work, a novel photodetector based on TiO2/TiN nanotubes was deposited on a porous aluminum oxide template (PAOT) for light power intensity and wavelength detection. The PAOT was fabricated by the Ni-imprinting technique through a two-step anodization method. The TiO2/TiN layers were deposited by using atomic layer deposition and magnetron sputtering, respectively. The PAOT and PAOT/TiO2/TiN were characterized by several techniques such as X-ray diffraction (XRD), scanning electron microscope (SEM), and energy dispersive X-ray (EDX). The PAOT has high-ordered hexagonal nanopores with dimensions ~ 320 nm pore diameter and ~ 61 nm interpore distance. The bandgap of PAOT/TiO2 decreased from 3.1 to 2.2 eV with enhancing absorption of visible light after deposition of TiN on the PAOT/TiO2. The PAOT/TiO2/TiN as photodetector has a responsivity (R) and detectivity (D) of 450 mAW-1 and 8.0 × 1012 Jones, respectively. Moreover, the external quantum efficiency (EQE) was 9.64% at 62.5 mW.cm-2 and 400 nm. Hence, the fabricated photodetector (PD) has a very high photoelectrical response due to hot electrons from the TiN layer, which makes it very hopeful as a broadband photodetector.
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Affiliation(s)
- Asmaa M Elsayed
- Nanophotonics and Applications (NPA) Lab, Physics Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt
- TH-PPM Group, Physics Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt
| | - Mohamed Rabia
- Nanophotonics and Applications (NPA) Lab, Physics Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt
- Polymer Research Laboratory, Chemistry Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt
| | - Mohamed Shaban
- Nanophotonics and Applications (NPA) Lab, Physics Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt
- Department of Physics, Faculty of Science, Islamic University of Madinah, P. O. Box: 170, Al Madinah Almonawara, 42351, Saudi Arabia
| | - Arafa H Aly
- TH-PPM Group, Physics Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt.
| | - Ashour M Ahmed
- Nanophotonics and Applications (NPA) Lab, Physics Department, Faculty of Science, Beni-Suef University, Beni Suef, 62514, Egypt
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Jezeh ZA, Efafi B, Ghafary B. The effect of electrode shape on Schottky barrier and electric field distribution of flexible ZnO photodiode. Sci Rep 2021; 11:15604. [PMID: 34341440 PMCID: PMC8329072 DOI: 10.1038/s41598-021-95203-3] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/06/2021] [Accepted: 07/22/2021] [Indexed: 02/07/2023] Open
Abstract
In this study, the effect of electrode shape difference on the height of the Schottky barrier and the electric field in flexible photodiodes (PDs) has been investigated. For this purpose, three different electrode designs were prepared on three flexible FR4 layers that were coated with Zinc Oxide (ZnO). The printing circuit board (PCB) method was used to create these copper electrodes. The asymmetry of the PD electrodes and the difference in the height of the Schottky barrier has led to the creation of self-powered PDs. The effect of the amount and shape of the distribution of internal electric fields generated in the PDs and its effect on the parameters of the PDs has been investigated with the help of simulations performed in COMSOL software. The photocurrent of the sample with circular and rectangular electrodes was equal to 470 µA in 15 V bias, which was twice as good as a sample with an interdigitated MSM structure. Also, this sample had the best response time among these three samples, which was equal to 440 ms.
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Affiliation(s)
- Zahra Aminrayai Jezeh
- Photonics Lab, Physics Department, Iran University of Science and Technology, Tehran, Iran
| | - Babak Efafi
- Photonics Lab, Physics Department, Iran University of Science and Technology, Tehran, Iran.
- Nano Photonics Lab, Applied Science Research Center, Kharazmi University, Alborz, Iran.
| | - Bijan Ghafary
- Photonics Lab, Physics Department, Iran University of Science and Technology, Tehran, Iran
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Premkumar S, Nataraj D, Bharathi G, Ramya S, Thangadurai TD. Highly Responsive Ultraviolet Sensor Based on ZnS Quantum Dot Solid with Enhanced Photocurrent. Sci Rep 2019; 9:18704. [PMID: 31822730 PMCID: PMC6904578 DOI: 10.1038/s41598-019-55097-8] [Citation(s) in RCA: 22] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/15/2019] [Accepted: 11/19/2019] [Indexed: 11/11/2022] Open
Abstract
Detection of visible blind UV radiation is not only interesting but also of technologically important. Herein, we demonstrate the efficient detection of UV radiation by using cluster like ZnS quantum dot solid nanostructures prepared by simple reflux condensation technique. The short-chain ligand 3-mercaptopropionic acid (MPA) involved in the synthesis lead to the cluster like formation of ZnS quantum dots into solids upon prolonged synthesis conditions. The ZnS QD solid formation resulted in the strong delocalization of electronic wave function between the neighboring quantum dots. It increases the photocurrent value, which can be further confirmed by the decrease in the average lifetime values from 64 to 4.6 ns upon ZnS cluster like QD solid formation from ZnS QDs. The ZnS quantum dot solid based UV sensor shows good photocurrent response and a maximum responsivity of 0.31 (A/W) at a wavelength of 390 nm, is not only competitive when compared with previous reports but also better than ZnS and metal oxide-based photodetectors. The device exhibits a high current value under low-intensity UV light source and an on/off ratio of IUV/Idark = 413 at zero biasing voltage with a fast response. Further, photocurrent device has been constructed using ZnS quantum dot solid nanostructures with graphene hybrids as an active layer to improve the enhancement of photoresponsivity.
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Affiliation(s)
- Sellan Premkumar
- Quantum Materials and Devices Laboratory, Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu, 641046, India.
- School of Chemistry and Chemical Engineering, Tianjin Polytechnic University, Tianjin, 300387, China.
- Tianjin Key Laboratory of Green Chemistry and Process Engineering, and School of Material Science and Engineering, Tianjin Polytechnic University, Tianjin, 300387, China.
| | - Devaraj Nataraj
- Quantum Materials and Devices Laboratory, Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu, 641046, India.
- UGC-CPEPA Centre for Advanced Studies in Physics for the development of Solar Energy Materials and Devices, Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu, 641046, India.
| | - Ganapathi Bharathi
- Quantum Materials and Devices Laboratory, Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu, 641046, India
| | - Subramaniam Ramya
- Quantum Materials and Devices Laboratory, Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu, 641046, India
| | - T Daniel Thangadurai
- Department of Nanoscience and Technology, Sri Ramakrishna Engineering College, Coimbatore, Tamil Nadu, 641022, India
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Prasad N, Karthikeyan B. Phase-dependent structural, optical, phonon and UV sensing properties of ZnS nanoparticles. NANOTECHNOLOGY 2019; 30:485702. [PMID: 31532758 DOI: 10.1088/1361-6528/ab3cbf] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
In order to investigate the influence of crystal structure on the photoresponse properties of ZnS nanoparticles under UV light exposure, electrical measurements on polyvinylpyrrolidone capepd cubic and hexagonal ZnS nanoparticles with average particle size 30-40 nm have been successfully carried out. Low-temperature solvothermal synthesis yields pure and highly crystalline w-ZnS nanoparticles with good stability. Different structures of prepared ZnS nanoparticles have been identified and confirmed with powder x-ray diffraction, high-resolution field-emission transmission electron microscopy and non-resonant Raman spectroscopic techniques, respectively. The energy band gap and emission properties of cubic and hexagonal ZnS have been studied using UV-vis absorption and photoluminescence spectroscopy. The interaction of phonons with free carriers and transport properties has a vital influence on the electronic and optical properties of nanomaterials. Hence, the resonant and non-resonant Raman spectral studies have been carried out for the prepared samples. Studies on the I-V characteristics and the mechanism behind the enhancement of photocurrent for the cubic and hexagonal ZnS nanoparticle-based photodetectors have shown an enhanced photocurrent for hexagonal ZnS nanoparticles rather than the cubic.
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Affiliation(s)
- Neena Prasad
- Nanophotonics Laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli-620 015, India
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Khan F, Khan W, Kim SD. High-Performance Ultraviolet Light Detection Using Nano-Scale-Fin Isolation AlGaN/GaN Heterostructures with ZnO Nanorods. NANOMATERIALS 2019; 9:nano9030440. [PMID: 30875973 PMCID: PMC6474106 DOI: 10.3390/nano9030440] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/24/2019] [Revised: 03/06/2019] [Accepted: 03/08/2019] [Indexed: 01/25/2023]
Abstract
Owing to their intrinsic wide bandgap properties ZnO and GaN materials are widely used for fabricating passive-type visible-blind ultraviolet (UV) photodetectors (PDs). However, most of these PDs have a very low spectral responsivity R, which is not sufficient for detecting very low-level UV signals. We demonstrate an active type UV PD with a ZnO nanorod (NR) structure for the floating gate of AlGaN/GaN high electron mobility transistor (HEMT), where the AlGaN/GaN epitaxial layers are isolated by the nano-scale fins (NFIs) of two different fin widths (70 and 80 nm). In the dark condition, oxygen adsorbed at the surface of the ZnO NRs generates negative gate potential. Upon UV light illumination, the negative charge on the ZnO NRs is reduced due to desorption of oxygen, and this reversible process controls the source-drain carrier transport property of HEMT based PDs. The NFI PDs of a 70 nm fin width show the highest R of a ~3.2 × 107 A/W at 340 nm wavelength among the solid-state UV PDs reported to date. We also compare the performances of NFI PDs with those of conventional mesa isolation (MI, 40 × 100 µm2). NFI devices show ~100 times enhanced R and on-off current ratio than those of MI devices. Due to the volume effect of the small active region, a much faster response speed (rise-up and fall-off times of 0.21 and 1.05 s) is also obtained from the NFI PDs with a 70 nm fin width upon the UV on-off transient.
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Affiliation(s)
- Fasihullah Khan
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 100-715, Korea.
| | - Waqar Khan
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 100-715, Korea.
| | - Sam-Dong Kim
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 100-715, Korea.
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Rovisco A, Branquinho R, Martins J, Oliveira MJ, Nunes D, Fortunato E, Martins R, Barquinha P. Seed-Layer Free Zinc Tin Oxide Tailored Nanostructures for Nanoelectronic Applications: Effect of Chemical Parameters. ACS APPLIED NANO MATERIALS 2018; 1:3986-3997. [PMID: 30294718 PMCID: PMC6166637 DOI: 10.1021/acsanm.8b00743] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/07/2018] [Accepted: 07/20/2018] [Indexed: 05/27/2023]
Abstract
Semiconductor nanowires are mostly processed by complex, expensive, and high temperature methods. In this work, with the intent of developing zinc tin oxide nanowires (ZTO NWs) by low-cost and low-complexity processes, we show a detailed study on the influence of chemical parameters in the hydrothermal synthesis of ZTO nanostructures at temperatures of only 200 °C. Two different zinc precursors, the ratio between zinc and tin precursors, and the concentration of the surfactant agent and of the mineralizer were studied. The type and the crystallinity of the nanostructures were found to be highly dependent on the used precursors and on the concentration of each reagent. Conditions for obtaining different ZTO nanostructures were achieved, namely, Zn2SnO4 nanoparticles and ZnSnO3 nanowires with length ∼600 nm, with the latter being reported for the first time ever by hydrothermal methods without the use of seed layers. Optical and electrical properties were analyzed, obtaining band gaps of 3.60 and 3.46 eV for ZnSnO3 and Zn2SnO4, respectively, and a resistivity of 1.42 kΩ·cm for single ZnSnO3 nanowires, measured using nanomanipulators after localized deposition of Pt electrodes by e-beam assisted gas decomposition. The low-temperature hydrothermal methods explored here proved to be a low-cost, reproducible, and highly flexible route to obtain multicomponent oxide nanostructures, particularly ZTO NWs. The diversity of the synthesized ZTO structures has potential application in next-generation nanoscale devices such as field effect nanotransistors, nanogenerators, resistive switching memories, gas sensors, and photocatalysis.
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An Q, Liu Y, Jiang R, Meng X. Chemical vapor deposition growth of ReS 2 nanowires for high-performance nanostructured photodetector. NANOSCALE 2018; 10:14976-14983. [PMID: 30051113 DOI: 10.1039/c8nr04143a] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Rhenium disulfide (ReS2) is a recently discovered next-generation transition metal dichalcogenides (TMDs) material that exhibits unique properties, which have resulted in its wide use in the fabrication of electronic and optoelectronic devices. Studies on ReS2 have mainly focused on the synthesis and applications of two-dimensional (2D) materials, while studies on one-dimensional (1D) ReS2 have yet to be reported. Herein, 1D single-crystal ReS2 nanowires have been synthesized successfully for the first time via chemical vapor deposition (CVD) and utilized as the active layer in a nanostructured photodetector. The crystal structure, phonon vibration modes, and chemical states of the single-crystal ReS2 nanowires have been investigated. Furthermore, the nanostructured photodetector using single-crystal ReS2 nanowires as the active layer and Ag nanowire networks as the transparent electrodes exhibited excellent performance, including a higher photoresponsivity (5.08 × 105), the highest external quantum efficiency (1.07 × 106), and the largest specific detectivity (6.1 × 1015) among ReS2 nanostructure-based photodetectors reported to date. Furthermore, the photodetector performance under vacuum conditions was investigated, which provides some information on the work mechanism of the ReS2 photodetector.
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Affiliation(s)
- Qinwei An
- School of Physics and Technology, and Center for Nanoscience and Nanotechnology School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, P. R. China.
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