Materials analysis and focused ion beam nanofabrication of topological insulator Bi2Se3

Cathodoluminescence and tip-plasmon resonance of Bi2Te3 triangular nanostructures

Bi2Te3, as a topological insulator, is able to support plasmonic emission in the visible spectral range. Thin Bi2Te3 flakes can be exfoliated directly from a Bi2Te3 crystal, and the shape of Bi2Te3 flakes can be further modified by focused ion beam milling. Therefore, we have designed a Bi2Te3 triangular antenna with distinct tip angles for the application of plasmonic resonance. The plasmonic emission of the Bi2Te3 triangular antenna is excited and investigated by cathodoluminescence in the scanning electron microscope. Enhanced tip plasmons have been observed from distinct tips with angles of 20º, 36º, 54º, 70º, and 90º, respectively. Due to the confinement of geometric boundaries for oscillating charges, the resonant peak position of tip plasmon with a smaller angle has a blue shift. Moreover, the dependence of plasmonic behavior on the excitation position has been discovered as well. This research provides a unique approach to fabricate Bi2Te3 nanostructures and manipulate the corresponding plasmonic properties.

Top-down patterning of topological surface and edge states using a focused ion beam

The conducting boundary states of topological insulators appear at an interface where the characteristic invariant ℤ2 switches from 1 to 0. These states offer prospects for quantum electronics; however, a method is needed to spatially-control ℤ2 to pattern conducting channels. It is shown that modifying Sb2Te3 single-crystal surfaces with an ion beam switches the topological insulator into an amorphous state exhibiting negligible bulk and surface conductivity. This is attributed to a transition from ℤ2 = 1 → ℤ2 = 0 at a threshold disorder strength. This observation is supported by density functional theory and model Hamiltonian calculations. Here we show that this ion-beam treatment allows for inverse lithography to pattern arrays of topological surfaces, edges and corners which are the building blocks of topological electronics.

Ion-Induced Lateral Damage in the Focused Ion Beam Patterning of Topological Insulator Bi2Se3 Thin Films

Focused Ion Beam patterning has become a widely applied technique in the last few decades in the micro- and nanofabrication of quantum materials, representing an important advantage in terms of resolution and versatility. However, ion irradiation can trigger undesired effects on the target material, most of them related to the damage created by the impinging ions that can severely affect the crystallinity of the sample, compromising the application of Focused Ion Beam to the fabrication of micro- and nanosized systems. We focus here on the case of Bi₂Se₃, a topological material whose unique properties rely on its crystallinity. In order to study the effects of ion irradiation on the structure of Bi₂Se₃, we irradiated with Ga⁺ ions the full width of Hall-bar devices made from thin films of this material, with the purpose of inducing changes in the electrical resistance and characterizing the damage created during the process. The results indicate that a relatively high ion dose is necessary to introduce significant changes in the conduction. This ion dose creates medium-range lateral damage in the structure, manifested through the formation of an amorphous region that can extend laterally up to few hundreds of nanometers beyond the irradiated area. This amorphous material is no longer expected to behave as intrinsic Bi₂Se₃, indicating a spatial limitation for the devices fabricated through this technique.

Nanopatterning of silicon via the near-field enhancement effect upon double-pulse femtosecond laser exposure

Utilizing the near-field enhancement effect of a polystyrene microsphere, direct ablation of nanohole arrays by a temporal-shaping femtosecond (fs) laser pulse is presented. The nanohole arrays, which are circular, regular, and free of cracks, were processed without extra post-processing, and their average diameter decreased gradually, as the double-pulse delay increased until 2500 fs. The simulated results by a plasma model and finite difference time domain solution demonstrate that the size decrease of the structure is attributed to the increase of the ablation threshold of silicon. Through fs laser near-field fabrication, the FWHM of nanoholes can be reduced to approximately 50 nm (λ/16) and even to 23 nm when using the second harmonic laser at a wavelength of 400 nm.

Ab initio prediction of semiconductivity in a novel two-dimensional Sb2X3 (X= S, Se, Te) monolayers with orthorhombic structure

[Formula: see text] and [Formula: see text] are well-known layered bulk structures with weak van der Waals interactions. In this work we explore the atomic lattice, dynamical stability, electronic and optical properties of [Formula: see text], [Formula: see text] and [Formula: see text] monolayers using the density functional theory simulations. Molecular dynamics and phonon dispersion results show the desirable thermal and dynamical stability of studied nanosheets. On the basis of HSE06 and PBE/GGA functionals, we show that all the considered novel monolayers are semiconductors. Using the HSE06 functional the electronic bandgap of [Formula: see text], [Formula: see text] and [Formula: see text] monolayers are predicted to be 2.15, 1.35 and 1.37 eV, respectively. Optical simulations show that the first absorption coefficient peak for [Formula: see text], [Formula: see text] and [Formula: see text] monolayers along in-plane polarization is suitable for the absorption of the visible and IR range of light. Interestingly, optically anisotropic character along planar directions can be desirable for polarization-sensitive photodetectors. Furthermore, we systematically investigate the electrical transport properties with combined first-principles and Boltzmann transport theory calculations. At optimal doping concentration, we found the considerable larger power factor values of 2.69, 4.91, and 5.45 for hole-doped [Formula: see text], [Formula: see text], and [Formula: see text], respectively. This study highlights the bright prospect for the application of [Formula: see text], [Formula: see text] and [Formula: see text] nanosheets in novel electronic, optical and energy conversion systems.

Accessing topological surface states and negative MR in sculpted nanowires of Bi2Te3 at ultra-low temperature

Milling of 2D flakes is a simple method to fabricate nanomaterial of any desired shape and size. Inherently milling process can introduce the impurity or disorder which might show exotic quantum transport phenomenon when studied at the low temperature. Here we report temperature dependent weak antilocalization (WAL) effects in the sculpted nanowires of topological insulator in the presence of perpendicular magnetic field. The quadratic and linear magnetoconductivity (MC) curves at low temperature (>2 K) indicate the bulk contribution in the transport. A cusp feature in magnetoconductivity curves (positive magnetoresistance) at ultra low (<1 K) temperature and at magnetic field (<1 T) represent the WAL indicating the transport through surface states. The MC curves are discussed by using the 2D Hikami-Larkin-Nagaoka theory. The cross-over/interplay nature of positive and negative magnetoresistance observed in the MR curve at ultra-low temperature. Our results indicate that transport through topological surface states (TSS) in sculpted nanowires of Bi₂Te₃ can be achieved at mK range and linear MR observed at ∼2 K could be the coexistence of electron transport through TSS and contribution from the bulk band.

Gold Nanoisland Agglomeration upon the Substrate Assisted Chemical Etching Based on Thermal Annealing Process

In this study, we proposed the self-organization process and its localized surface plasmon resonance property (LSPR) to study the effect of chemically treated quartz glass substrates for gold nanoisland array formation. Firstly, we etched a quartz glass substrate using a sputter etching machine. Secondly, n-butanol was treated on the surface of the substrate. Then, we deposited a gold thin film on the substrate with assisted chemical etching. Finally, the self-organization method examined the thermal annealing of gold nanoisland arrays on a substrate. The results showed that the gold nanoisland that was aggregated on an etched quartz glass substrate was large and sparse, while the gold nanoisland aggregated on a chemically treated substrate was small and dense. Further, it was revealed that a substrate’s surface energy reduced chemical treating and increased the gold nanoisland contact angle on the substrate via the thermal annealing process. It was also confirmed that chemical treatment was useful to control the morphology of gold nanoisland arrays on a substrate, particularly when related to tuning their optical property.

Plasmonic Emission of Bullseye Nanoemitters on Bi2Te3 Nanoflakes

Topological insulators, such as Bi₂Te₃, have been confirmed to exhibit plasmon radiation over the entire visible spectral range. Herein, we fabricate bullseye nanoemitters, consisting of a central disk and concentric gratings, on the Bi₂Te₃ nanoflake. Due to the existence of edge plasmon modes, Bi₂Te₃ bullseye nanostructures are possible to converge light towards the central disk. Taking advantage of the excellent spatial resolution of cathodoluminescence (CL) characterization, it has been observed that plasmonic behaviors depend on the excitation location. A stronger plasmonic intensity and a wider CL spectral linewidth can be obtained at the edge of the central disk. In order to further improve the focusing ability, a cylindrical Pt nanostructure has been deposited on the central disk. Additionally, the finite element simulation indicates that the electric-field enhancement originates from the coupling process between the plasmonic emission from the Bi₂Te₃ bullseye and the Pt nanostructure. Finally, we find that enhancement efficiency depends on the thickness of the Pt nanostructure.

Comparison between Focused Electron/Ion Beam-Induced Deposition at Room Temperature and under Cryogenic Conditions

In this contribution, we compare the performance of Focused Electron Beam-induced Deposition (FEBID) and Focused Ion Beam-induced Deposition (FIBID) at room temperature and under cryogenic conditions (the prefix “Cryo” is used here for cryogenic). Under cryogenic conditions, the precursor material condensates on the substrate, forming a layer that is several nm thick. Its subsequent exposure to a focused electron or ion beam and posterior heating to 50 °C reveals the deposit. Due to the extremely low charge dose required, Cryo-FEBID and Cryo-FIBID are found to excel in terms of growth rate, which is typically a few hundred/thousand times higher than room-temperature deposition. Cryo-FIBID using the W(CO)₆ precursor has demonstrated the growth of metallic deposits, with resistivity not far from the corresponding deposits grown at room temperature. This paves the way for its application in circuit edit and the fast and direct growth of micro/nano-electrical contacts with decreased ion damage. The last part of the contribution is dedicated to the comparison of these techniques with other charge-based lithography techniques in terms of the charge dose required and process complexity. The comparison indicates that Cryo-FIBID is very competitive and shows great potential for future lithography developments.

Metallic edge states in zig-zag vertically-oriented MoS2 nanowalls

The remarkable properties of layered materials such as MoS₂ strongly depend on their dimensionality. Beyond manipulating their dimensions, it has been predicted that the electronic properties of MoS₂ can also be tailored by carefully selecting the type of edge sites exposed. However, achieving full control over the type of exposed edge sites while simultaneously modifying the dimensionality of the nanostructures is highly challenging. Here we adopt a top-down approach based on focus ion beam in order to selectively pattern the exposed edge sites. This strategy allows us to select either the armchair (AC) or the zig-zag (ZZ) edges in the MoS₂ nanostructures, as confirmed by high-resolution transmission electron microscopy measurements. The edge-type dependence of the local electronic properties in these MoS₂ nanostructures is studied by means of electron energy-loss spectroscopy measurements. This way, we demonstrate that the ZZ-MoS₂ nanostructures exhibit clear fingerprints of their predicted metallic character. Our results pave the way towards novel approaches for the design and fabrication of more complex nanostructures based on MoS₂ and related layered materials for applications in fields such as electronics, optoelectronics, photovoltaics, and photocatalysts.

Electron Beam Irradiation-Induced Deoxidation and Atomic Flattening on the Copper Surface

Electron beam (e-beam) has been developed for nanomaterial observation and moreover to induce structural evolutions in atomic scale. In this work, we demonstrate the deoxidation of cuprous oxide (Cu₂O) and the formation of an atomically flat surface on a Cu nanowire by e-beam irradiation. To develop e-beam irradiation applications, the relation between e-beam radiation and the atomic surface is significant. Through the density functional theory simulation of atomic sputtering, an obvious disparity in the sputtering threshold has been found under different structural conditions, which leads to different structural evolutions. Both surface deoxidation and atomic surface flattening reactions have been identified as self-limiting and irreversible processes via in situ transmission electron microscope observation. Under e-beam irradiation, the dynamic mechanism of atomic surface flattening is driven by the convergence of total surface energy and confirmed by climbing-image nudged elastic band (ci-NEB) calculations. With precise control, e-beam irradiation reveals enormous potentials in atomic surface engineering.

Spin-dependent scattering induced negative magnetoresistance in topological insulator Bi2Te3 nanowires

Studies of negative magnetoresistance in novel materials have recently been in the forefront of spintronic research. Here, we report an experimental observation of the temperature dependent negative magnetoresistance in Bi₂Te₃ topological insulator (TI) nanowires at ultralow temperatures (20 mK). We find a crossover from negative to positive magnetoresistance while increasing temperature under longitudinal magnetic field. We observe a large negative magnetoresistance which reaches −22% at 8 T. The interplay between negative and positive magnetoresistance can be understood in terms of the competition between dephasing and spin-orbit scattering time scales. Based on the first-principles calculations within a density functional theory framework, we demonstrate that disorder (substitutional) by Ga⁺ ion milling process, which is used to fabricate nanowires, induces local magnetic moments in Bi₂Te₃ crystal that can lead to spin-dependent scattering of surface and bulk electrons. These experimental findings show a significant advance in the nanoscale spintronics applications based on longitudinal magnetoresistance in TIs. Our experimental results of large negative longitudinal magnetoresistance in 3D TIs further indicate that axial anomaly is a universal phenomenon in generic 3D metals.

Transmission Electron Microscope Nanosculpting of Topological Insulator Bismuth Selenide

We present a process for sculpting Bi₂Se₃ nanoflakes into application-relevant geometries using a high-resolution transmission electron microscope. This process takes several minutes to sculpt small areas and can be used to cut the Bi₂Se₃ into wires and rings, to thin areas of the Bi₂Se₃, and to drill circular holes and lines. We determined that this method allows for sub 10 nm features and results in clean edges along the drilled regions. Using in situ high-resolution imaging, selected area diffraction, and atomic force microscopy, we found that this lithography process preserves the crystal structure of Bi₂Se₃. TEM sculpting is more precise and potentially results in cleaner edges than does ion-beam modification; therefore, the promise of this method for thermoelectric and topological devices calls for further study into the transport properties of such structures.

Enhancement of field electron emission in topological insulator Bi2Se3 by Ni doping

Nanostructures of bismuth selenide (Bi₂Se₃), a 3D topological insulator material, and nickel (Ni) doped Bi₂Se₃ samples were prepared by a hydrothermal method to explore the field emission properties.